JPH0325970B2 - - Google Patents
Info
- Publication number
- JPH0325970B2 JPH0325970B2 JP56012460A JP1246081A JPH0325970B2 JP H0325970 B2 JPH0325970 B2 JP H0325970B2 JP 56012460 A JP56012460 A JP 56012460A JP 1246081 A JP1246081 A JP 1246081A JP H0325970 B2 JPH0325970 B2 JP H0325970B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- level
- transistor
- ratioless
- logic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/096—Synchronous circuits, i.e. using clock signals
- H03K19/0963—Synchronous circuits, i.e. using clock signals using transistors of complementary type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
Description
【発明の詳細な説明】
本発明はMOSトランジスタで構成された論理
回路に関するもので、特にレシオレス回路に生じ
る誤動作を防止して動作の高速化を図つた論理回
路に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a logic circuit composed of MOS transistors, and more particularly to a logic circuit that prevents malfunctions that occur in ratioless circuits and increases the speed of operation.
近年半導体集積回路の高集積化に伴い、集積度
及び低消費電力の面から盛んにレシオレス回路が
採用されて論理回路が構成されている。第1図は
CMOS回路における最も単純なレシオレス回路
の例を示しており、該レシオレス回路によれば定
常電流が流れない、負荷とドライバMOSは同寸
法でしかも小さく設計ができて集積度を挙げるこ
とができる等の利点があることから上述のように
各種の電子機器駆動のための論理回路に用いられ
ている。しかし上記レシオレス回路においては次
に述べるクロツクφに非同期の入力信号iNaが与
えられると、出力信号outaとして電源電圧の中
間レベルの信号が導出される惧れがあり、このよ
うな中間レベルの信号が次段に設けられた
CMOS回路に与えられたりすると誤動作の原因
になり、また本来定常電流が流れない回路に電流
が流れて、消費電力が大きくなるという欠点があ
る。 2. Description of the Related Art In recent years, as semiconductor integrated circuits have become more highly integrated, ratioless circuits have been increasingly adopted to construct logic circuits in terms of integration and low power consumption. Figure 1 is
This shows an example of the simplest ratioless circuit in CMOS circuits, which has the following advantages: no steady current flows, the load and driver MOS have the same size, can be designed small, and can increase the degree of integration. Due to its advantages, it is used in logic circuits for driving various electronic devices as described above. However, in the ratioless circuit described above, if an asynchronous input signal iNa is applied to the clock φ, which will be described next, there is a risk that a signal at an intermediate level of the power supply voltage will be derived as the output signal outa. installed on the next level
If it is applied to a CMOS circuit, it can cause malfunction, and it also has the disadvantage that current flows through circuits that normally do not allow steady current to flow, increasing power consumption.
即ち、第1図に示した1相のクロツクφによつ
て駆動されるレシオレス回路の入力端子に、第3
図の入力信号iNaに示す如く、上記クロツクφに
非同期の入力信号が与えられた場合の動作を考え
る。クロツクφが“高”レベルにある期間に出力
端は電源−Vにプリチヤージされて−Vレベルの
出力信号outaが形成される。プリシヤージされ
た後に上記入力信号iNaが与えられて、クロツク
φが“低”レベルの期間内に入力信号iNaが
“高”から“低”レベルに変化すると、入力信号
iNaが与えられたPチヤネルMOSトランジスタ
がオンに遷移し、既にオン状態にある接地側のP
チヤネルMOSトランジスタを介して出力端にプ
リチヤージされた電荷が放電される。このとき入
力信号iNaのレベルがクロツクφの途中で“低”
レベルに変化するため、プリチヤージされた電荷
を放電させ得る期間は短かくなつて放電が不充分
に終り、また入力信号iNaが与えられたPチヤネ
ルMOSトランジスタ、即ちロジツク回路部分を
通して放電されるため安定レベルに達するまでに
時間を要し、出力端子に導出される出力信号
outaとして第3図に示す信号outaの如く電源−
Vと接地レベル間の中間レベルをもつた信号が出
力される。このような中間レベルの信号outaが
次段のインバータ等に与えられると誤動作を生じ
させる原因になる。 That is, the third clock is connected to the input terminal of the ratioless circuit driven by the one-phase clock
Consider the operation when an asynchronous input signal is applied to the clock φ, as shown by the input signal iNa in the figure. While the clock φ is at the "high" level, the output terminal is precharged to the power supply -V, and an output signal outa at the -V level is formed. When the input signal iNa is applied after being precharged and changes from "high" to "low" level within the period when clock φ is "low" level, the input signal iNa changes from "high" to "low" level.
The P-channel MOS transistor to which iNa is applied turns on, and the ground side P, which is already in the on state,
The precharged charges are discharged to the output terminal via the channel MOS transistor. At this time, the level of input signal iNa becomes “low” in the middle of clock φ.
As the level changes, the period during which the precharged charges can be discharged becomes shorter, and the discharge ends insufficiently.Also, the input signal iNa is discharged through the P-channel MOS transistor, that is, the logic circuit part, so that it becomes stable. Output signal that takes time to reach the level and is derived to the output terminal
The power supply as shown in Figure 3 as outa.
A signal having an intermediate level between V and ground level is output. If such an intermediate level signal outa is applied to an inverter or the like in the next stage, it may cause malfunction.
またレシオレス回路に設けられた論理回路が、
第1図に示した1個のPチヤネルMOSトランジ
スタで構成される回路とは異なり第2図に示す如
く縦積段数の多い論理ブロツクで構成される場合
には、中間レベルの信号が出力されて正確な信号
が得られないだけではなく、動作速度の点でも問
題があり、非同期の入力信号をレシオレス回路で
処理させることが難かしく、論理回路の縦積段数
に制限が生じて論理構成の自由度が少なくなり、
回路構成が難しくなるという欠点があつた。 In addition, the logic circuit provided in the ratioless circuit is
Unlike the circuit made up of one P-channel MOS transistor shown in Fig. 1, when the circuit is made up of logic blocks with a large number of vertically stacked stages as shown in Fig. 2, an intermediate level signal is output. Not only is it not possible to obtain accurate signals, but there are also problems in terms of operating speed. It is difficult to process asynchronous input signals with a ratioless circuit, and the number of vertically stacked logic circuits is limited, which limits the freedom of logic configuration. The degree decreases,
The drawback was that the circuit configuration was difficult.
本発明は上記従来回路の欠点を除去し、簡単な
構成を付加することによつて出力信号のレベルの
定常化の増幅を図つた論理回路を提供するもので
ある。次に実施例を挙げて本発明を詳細に説明す
る。 The present invention eliminates the drawbacks of the conventional circuit described above and provides a logic circuit which is capable of amplifying the level of an output signal to become constant by adding a simple structure. Next, the present invention will be explained in detail with reference to Examples.
第4図は本発明の基本回路例を示す1相レシオ
レス回路図である。電源−Vと接地電位間に、ク
ロツクφがゲートに与えられたNチヤネルMOS
トランジスタT1及びPチヤネルMOSトランジス
タT2が設けられ、更に両トランジスタ間にPチ
ヤネルMOSトランジスタが適宜の接続をなして
構成されたロジツク部Lが設けられてレシオレス
回路が構成されている。本発明による論理回路は
上記レシオレス回路に、ロジツク部Lをバイパス
させるPチヤネルMOSトランジスタT3が設けら
れ、該トランジスタT3のゲートにはレシオレス
回路の出力信号をインバータIで反転させた反転
信号が与えられている。第5図は上記基本回路例
のロジツク部Lが、入力信号iNcが与えられたP
チヤネルMOSトランジスタT41個で構成された
レシオレス回路の具体例を示し、バイパス用Pチ
ヤネルMOSトランジスタT3が接続されたインバ
ータIの入力端A或いはインバータIの出力端B
から出力信号が導出される。同回路において、第
7図の信号波形図に示す如くクロツクφに非同期
の入力信号iNcがトランジスタT4のゲートに与え
られて、従来回路と同様にクロツクφが“高”レ
ベルの期間にA点が−Vレベルにプリチヤージさ
れ、次にクロツクφが“低”レベルに遷移しても
トランジスタT4がオンに遷移しない限りA点の
プリチヤージ状態は保持される。クロツクφ“低”
レベル期間の途中で入力信号iNcが“高”から
“低”レベルに変化すると、A点はプリチヤージ
された電荷が放電され“低”から“高”レベルに
変化する。A点が“高”レベルに変化することに
よりインバータIを介したB点は“高”から
“低”レベルに変化し、トランジスタT3をオンに
遷移させ、A点のプリチヤージを速めてレベルの
定常化を増幅させる。即ちB点に得られた反転信
号を帰還してA点のプリチヤージ電荷の放電をバ
イパスさせることにより、A点のレベルが短期間
に定常レベルに達して、中間レベルを出力するよ
うな事態の発生を防いで安定したレシオレス回路
出力を形成することができる。 FIG. 4 is a one-phase ratioless circuit diagram showing an example of the basic circuit of the present invention. N-channel MOS with clock φ applied to the gate between power supply -V and ground potential
A ratioless circuit is constructed by providing a transistor T1 and a P-channel MOS transistor T2 , and further providing a logic section L in which a P-channel MOS transistor is appropriately connected between both transistors. In the logic circuit according to the present invention, a P-channel MOS transistor T3 that bypasses the logic section L is provided in the ratioless circuit, and an inverted signal obtained by inverting the output signal of the ratioless circuit by an inverter I is supplied to the gate of the transistor T3 . It is given. FIG. 5 shows the logic part L of the basic circuit example described above, which is connected to P to which the input signal iNc is applied.
A specific example of a ratioless circuit composed of one channel MOS transistor T4 is shown, and the input terminal A of the inverter I or the output terminal B of the inverter I is connected to the bypass P channel MOS transistor T3 .
An output signal is derived from . In this circuit, an input signal iNc asynchronous to clock φ is applied to the gate of transistor T4 as shown in the signal waveform diagram of FIG. is precharged to the -V level, and then even if the clock φ transitions to the "low" level, the precharged state at point A is maintained unless the transistor T4 is turned on. Clock φ “low”
When the input signal iNc changes from "high" to "low" level in the middle of the level period, the precharged charges at point A are discharged and the level changes from "low" to "high". As point A changes to "high" level, point B via inverter I changes from "high" to "low" level, turning on transistor T3 , accelerating precharging at point A, and lowering the level. Amplify steady state. In other words, by feeding back the obtained inverted signal to point B and bypassing the discharge of the precharge charge at point A, a situation occurs in which the level at point A reaches a steady level in a short period of time and an intermediate level is output. It is possible to prevent this and form a stable ratioless circuit output.
第6図はロジツク部Lが直列接続された複数個
のPチヤネルMOSトランジスタで構成されたレ
シオレス回路で、本実施例においてもロジツク部
LをバイパスするPチヤネルMOSトランジスタ
T3が設けられ、該トランジスタのゲートにはレ
シオレス回路の出力信号Cの反転信号Dが与えら
れている。レシオレス回路の出力端C点が評価期
間に“低”から“高”レベルへと変化する動作に
伴つて、D点は“高”から“低”レベルに移りト
ランジスタT3をオンに遷移させ、C点にプリチ
ヤージされた電荷はトランジスタT3をも介して
放電され、“低”から“高”レベルへの遷移時間
を著しく短縮して、動作の高速化、レベルの安定
化が図られる。 Figure 6 shows a ratioless circuit in which the logic section L is composed of a plurality of P-channel MOS transistors connected in series.
T 3 is provided, and the inverted signal D of the output signal C of the ratioless circuit is applied to the gate of the transistor. As the output point C of the ratioless circuit changes from "low" to "high" level during the evaluation period, point D changes from "high" to "low" level and turns on transistor T3 . The charge precharged at point C is also discharged through transistor T3 , and the transition time from "low" to "high" level is significantly shortened, speeding up the operation and stabilizing the level.
本発明は上記実施例に限られるものではなく、
CMOS構造であれば第4図に示したPチヤネル
MOSトランジスタとNチヤネルMOSトランジス
タを逆にしたものでも可能であり、多相クロツク
PチヤネルMOSトランジスタLSI、Nチヤネル
MOSトランジスタLSIの片チヤネルLSIでも同様
に構成することができる。 The present invention is not limited to the above embodiments,
If it is a CMOS structure, the P channel shown in Figure 4
It is also possible to use a MOS transistor and an N-channel MOS transistor that are reversed.
A similar configuration can be achieved with a single channel LSI of a MOS transistor LSI.
以上本発明によれば、レシオレス回路の出力信
号のレベルを“低”或いは“高”レベルに高速に
安定化させることができ、従来回路では困難であ
つた非同期の入力信号を処理することができてレ
シオレス回路の利用範囲を一層拡大することがで
きる。 As described above, according to the present invention, it is possible to quickly stabilize the level of the output signal of a ratioless circuit to a "low" or "high" level, and it is possible to process asynchronous input signals, which has been difficult with conventional circuits. As a result, the range of use of ratioless circuits can be further expanded.
第1図及び第2図は従来のレシオレス回路を示
す電気回路図、第3図は同電気回路の動作を説明
するための信号波形図、第4図は本発明による基
本構成を示す回路ブロツク図、第5図及び第6図
は本発明による実施例を示す電気回路図、第7図
は同電気回路の動作を説明するための信号波形図
である。
T1,T2,T3……MOSトランジスタ、L……ロ
ジツク部、A,C……レシオレス回路出力端、
B,D……レシオレス回路出力信号の反転信号出
力端、I……インバータ。
1 and 2 are electric circuit diagrams showing a conventional ratioless circuit, FIG. 3 is a signal waveform diagram for explaining the operation of the same electric circuit, and FIG. 4 is a circuit block diagram showing the basic configuration according to the present invention. , FIG. 5 and FIG. 6 are electric circuit diagrams showing an embodiment of the present invention, and FIG. 7 is a signal waveform diagram for explaining the operation of the electric circuit. T 1 , T 2 , T 3 ... MOS transistor, L ... logic section, A, C ... ratioless circuit output terminal,
B, D...Inverted signal output terminal of ratioless circuit output signal, I...Inverter.
Claims (1)
の電位に充電する第一のトランジスタと、一端が
上記出力点に接続されたロジツク部と、上記ロジ
ツク部の他端と第二の電位との間に接続され、上
記第一期間に続く第二期間においてオンとなる第
二のトランジスタとから成るレシオレス回路にお
いて、 上記ロジツク部と並列に接続され、上記出力点
の電位によつてオン・オフ制御されるトランジス
タであつて、出力決定期間である上記第二期間に
おける上記ロジツク部のオン状態への遷移に応じ
てオン状態となり、上記ロジツク部と並列な放電
経路を形成するロジツク部バイパス用トランジス
タを設けたことを特徴とする論理回路。[Claims] 1. A first transistor that is turned on during a first period and charges an output point to a first potential, a logic section whose one end is connected to the output point, and the other end of the logic section. A ratioless circuit is connected in parallel with the logic section and is connected to the potential of the output point, and a second transistor is connected to the second potential and is turned on during the second period following the first period. Therefore, the transistor is controlled to be turned on and off, and turns on in response to the transition of the logic section to the on state during the second period, which is the output determination period, and forms a discharge path parallel to the logic section. A logic circuit characterized in that a logic section bypass transistor is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56012460A JPS57127337A (en) | 1981-01-29 | 1981-01-29 | Logical circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56012460A JPS57127337A (en) | 1981-01-29 | 1981-01-29 | Logical circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57127337A JPS57127337A (en) | 1982-08-07 |
| JPH0325970B2 true JPH0325970B2 (en) | 1991-04-09 |
Family
ID=11805956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56012460A Granted JPS57127337A (en) | 1981-01-29 | 1981-01-29 | Logical circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57127337A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59225614A (en) * | 1983-06-06 | 1984-12-18 | Nippon Telegr & Teleph Corp <Ntt> | Electric circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5845857B2 (en) * | 1976-01-26 | 1983-10-13 | 松下電器産業株式会社 | two phase clock circuit |
-
1981
- 1981-01-29 JP JP56012460A patent/JPS57127337A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57127337A (en) | 1982-08-07 |
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