Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0329208B2 - - Google Patents
[go: Go Back, main page]

JPH0329208B2 - - Google Patents

Info

Publication number
JPH0329208B2
JPH0329208B2 JP8738184A JP8738184A JPH0329208B2 JP H0329208 B2 JPH0329208 B2 JP H0329208B2 JP 8738184 A JP8738184 A JP 8738184A JP 8738184 A JP8738184 A JP 8738184A JP H0329208 B2 JPH0329208 B2 JP H0329208B2
Authority
JP
Japan
Prior art keywords
output
light
amplifier circuit
circuit
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8738184A
Other languages
Japanese (ja)
Other versions
JPS60230717A (en
Inventor
Juji Akishiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Keyence Corp
Original Assignee
Keyence Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Keyence Corp filed Critical Keyence Corp
Priority to JP8738184A priority Critical patent/JPS60230717A/en
Publication of JPS60230717A publication Critical patent/JPS60230717A/en
Publication of JPH0329208B2 publication Critical patent/JPH0329208B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/941Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector

Landscapes

  • Electronic Switches (AREA)

Description

【発明の詳細な説明】 (イ) 産業上の利用分野 この発明は検知対象物に関連して投光素子と受
光素子とを含む検知器を設け、前記投光素子から
照射された光を受光素子が受光することによつて
得られる受光信号を適宜の増幅率に設定される増
幅器に与え、該増幅器の出力と所定の弁別レベル
とを弁別することにより検知対象物の有無を検知
する光電スイツチに関する。
[Detailed description of the invention] (a) Industrial application field This invention provides a detector including a light emitting element and a light receiving element in relation to an object to be detected, and receives light emitted from the light emitting element. A photoelectric switch that detects the presence or absence of an object to be detected by applying a light reception signal obtained by receiving light to an amplifier set at an appropriate amplification factor and discriminating the output of the amplifier from a predetermined discrimination level. Regarding.

(ロ) 従来技術 第1図は従来の光電スイツチの説明図である。(b) Conventional technology FIG. 1 is an explanatory diagram of a conventional photoelectric switch.

同図aは受光信号を与えられる増幅器の増幅率
を可変することにより、検知器が設置される距離
に応じた最適の動作条件を選定される光電スイツ
チの構成を略示している。同図aにおいて、1は
LED等の投光素子2を駆動する投光駆動回路で
ある。3は検知対象物4から反射された光を検知
するホトトランジスタ等からなる受光素子であ
る。したがつて、投光素子2及び受光素子3は、
いわゆる反射型の検知器を構成している。
Figure a schematically shows the configuration of a photoelectric switch in which the optimum operating conditions are selected depending on the distance at which the detector is installed by varying the amplification factor of the amplifier to which the received light signal is applied. In the same figure a, 1 is
This is a light projection drive circuit that drives a light projection element 2 such as an LED. Reference numeral 3 denotes a light-receiving element made of a phototransistor or the like that detects light reflected from the detection object 4. Therefore, the light projecting element 2 and the light receiving element 3 are as follows.
It constitutes a so-called reflection type detector.

5は可変抵坑器VRで増幅率が可変される増幅
器である。6は弁別レベルE1が設定された弁別
回路である。7は弁別回路6の出力に基づき、、
図示しない次段のリレー等を駆動する出力回路で
ある。
5 is an amplifier whose amplification factor is varied by a variable resistor VR. 6 is a discrimination circuit in which a discrimination level E1 is set. 7 is based on the output of the discrimination circuit 6,
This is an output circuit that drives a next-stage relay, etc. (not shown).

一方、同図bは、検知器の設定距離に応じて弁
別レベルE2を可変することにより、適宜の動作
条件を選定するものである。同図において、同図
aと同一部分は同一符合で示してある。なお、
5′は増幅率固定の増幅器である。
On the other hand, in FIG. 5B, an appropriate operating condition is selected by varying the discrimination level E2 according to the set distance of the detector. In the figure, the same parts as in figure a are indicated by the same reference numerals. In addition,
5' is an amplifier with a fixed amplification factor.

一般に、受光素子の相対受光出力(最大受光出
力を1とする)と設定距離(検知器から検知対象
物までの距離)との間には第2図に示すような関
係がある。但し、同図は、検知器にガラスフアイ
バを使用した光電スイツチを例示している。例え
ば、両者が近接している場合の出力(同図におい
て設定距離が2〜3mmのときの出力であるA部)
と、離隔している出力(設定距離が30〜40mmのと
きの出力であるB部)との間には、約100倍もの
差がある。
Generally, there is a relationship as shown in FIG. 2 between the relative light receiving output of the light receiving element (the maximum light receiving output is 1) and the set distance (distance from the detector to the object to be detected). However, the figure illustrates a photoelectric switch using a glass fiber as a detector. For example, the output when the two are close to each other (section A, which is the output when the set distance is 2 to 3 mm in the same figure)
There is a difference of approximately 100 times between the distance and the output (portion B, which is the output when the set distance is 30 to 40 mm).

したがつて、第1図aに示した光電スイツチの
場合、検知器の設定距離に関連して、増幅器5の
出力が弁別レベルE1に略等しくなるように、増
幅器5の増幅率を適宜設定する必要がある。しか
しながら、増幅率設定に用いられる可変抵抗器
VRは、通常、使用可能な抵抗範囲が全抵抗の約
5%〜100%であるため、増幅率の可変幅は約20
倍が限度である。そのため、この光電スイツチの
場合、第2図に示したように相対受光出力が設定
距離に応じて著しく変化するものについては、全
設定距離に対して最適な増幅率を設定できないと
いう欠点がある。ここで、最適な増幅率とは、光
電スイツチが外乱の影響を受けることなく、検知
対象物を確実に検知し得るような動作条件を与え
る増幅率をいう。
Therefore, in the case of the photoelectric switch shown in FIG. 1a, the amplification factor of the amplifier 5 is appropriately set in relation to the set distance of the detector so that the output of the amplifier 5 is approximately equal to the discrimination level E1. There is a need. However, the variable resistor used to set the amplification factor
For VR, the usable resistance range is usually about 5% to 100% of the total resistance, so the variable range of the amplification factor is about 20%.
The limit is twice as much. Therefore, in the case of this photoelectric switch, as shown in FIG. 2, where the relative light reception output changes significantly depending on the set distance, there is a drawback that the optimum amplification factor cannot be set for the entire set distance. Here, the optimum amplification factor is an amplification factor that provides operating conditions such that the photoelectric switch can reliably detect the object to be detected without being affected by disturbances.

一方、第1図bに示した光電スイツチにあつて
は、設定距離が短い場合(第2図A部)、相対受
光出力の変化に対して検出距離の変化が僅かであ
るから、ある設定距離に対して弁別レベルを高分
解能に設定できる。しかし、設定距離が長い場合
(第2図B部)、相対受光出力の変化に対して検出
距離の変化が著しく大きくなるから、最適の弁別
レベルを設定することは困難である。ここで、最
適の弁別レベルとは、光電スイツチが外乱の影響
を受けることなく、検知対象物を確実に検知し得
るような動作条件を与える弁別レベルをいう。
On the other hand, in the case of the photoelectric switch shown in Fig. 1b, when the setting distance is short (part A in Fig. 2), the change in the detection distance is small with respect to the change in the relative received light output. The discrimination level can be set to high resolution. However, when the set distance is long (section B in FIG. 2), it is difficult to set the optimum discrimination level because the change in the detection distance becomes significantly large with respect to the change in the relative light reception output. Here, the optimum discrimination level refers to a discrimination level that provides operating conditions such that the photoelectric switch can reliably detect the object to be detected without being affected by disturbances.

(ハ) 目的 この発明は、受光出力が検出器の設定距離の変
化に伴い著しく変化する場合にも、該設定距離に
応じた最適の動作条件を設定し得る光電スイツチ
を提供することを目的としている。
(c) Purpose The purpose of the present invention is to provide a photoelectric switch that can set optimal operating conditions according to the set distance of a detector, even when the received light output changes significantly as the set distance of the detector changes. There is.

(ニ) 構成 この発明に係る光電スイツチは、検知対象物に
光を照射する投光素子と、この投光素子からの光
を受光し、受光信号を発生する受光素子と、この
受光素子の受光信号に所定の直流電圧を加算する
加算回路と、この加算回路の出力が入力され、こ
の出力が小さくなるに伴い増幅率が大きく設定さ
れる増幅回路と、この増幅回路の出力と、弁別レ
ベルとが入力され、これらを比較することにより
検知対象物の有無を検出する弁別器とを備えてお
り、前記弁別レベルは、前記増幅回路に入力され
る受光信号がゼロの時の増幅回路の出力との差が
最小に設定され、かつ前記直流電圧は、加算回路
の出力を増幅回路の最大増幅率で増幅した場合に
前記弁別レベルに等しくなるように設定されてい
る。
(d) Configuration The photoelectric switch according to the present invention includes a light projecting element that irradiates light onto an object to be detected, a light receiving element that receives light from the light projecting element and generates a light reception signal, and a light receiving element that receives light from the light receiving element. An adder circuit that adds a predetermined DC voltage to a signal, an amplifier circuit to which the output of this adder circuit is input and whose amplification factor is set to a larger value as the output decreases, and the output of this amplifier circuit and a discrimination level. and a discriminator that detects the presence or absence of a detection target by comparing these input signals, and the discrimination level is equal to the output of the amplifier circuit when the received light signal input to the amplifier circuit is zero. The difference is set to a minimum, and the DC voltage is set to be equal to the discrimination level when the output of the adder circuit is amplified at the maximum amplification factor of the amplifier circuit.

(ホ) 実施例 第3図はこの発明に係る光電スイツチの一実施
例の構成を略示したブロツク図である。
(e) Embodiment FIG. 3 is a block diagram schematically showing the structure of an embodiment of a photoelectric switch according to the present invention.

同図において、第1図と同一部分は同一符号で
示してある。8は受光素子3の出力である受光信
号を一定の増幅率で増幅する増幅器である。9は
増幅器8の出力に直流電圧E3を付加する加算回
路である。この加算回路9と次段の増幅回路5
は、具体的には第4図に示すように、帰還抵抗
VRを有する増幅回路の一方端子に抵抗R1を介
して増幅器8で増幅された受光信号を、抵抗R2
を介して直流電圧E3をそれぞれ加えるように構
成される。
In this figure, the same parts as in FIG. 1 are designated by the same reference numerals. Reference numeral 8 denotes an amplifier that amplifies the light-receiving signal, which is the output of the light-receiving element 3, at a constant amplification factor. 9 is an adder circuit that adds DC voltage E3 to the output of amplifier 8. This adder circuit 9 and the next stage amplifier circuit 5
Specifically, as shown in Figure 4, the feedback resistance is
The light receiving signal amplified by the amplifier 8 is connected to one terminal of the amplifier circuit having VR through the resistor R1, and the resistor R2
are configured to apply a DC voltage E3 through the respective terminals.

弁別器6の弁別レベルE4は、受光信号が最大
値を取る時(第2図のA部)の増幅回路5の出力
電圧と等しい値に予め設定される。一方、前記直
流電圧E3は検知器が最大設定距離(第2図のB
部)に設置された時の増幅器8の出力Ebと、直
流電圧E3を加算して得られる加算回路9の出力
を、増幅回路5の最大増幅率(例えば、10倍)で
もつて増幅した場合に、その増幅回路5の出力が
弁別レベルE4に等しくなるような値に設定され
る。数式で示すと、電圧E3は、(Eb+E3×10
=E4を満足すべき電圧値に予め設定される。
The discrimination level E4 of the discriminator 6 is set in advance to a value equal to the output voltage of the amplifier circuit 5 when the light reception signal takes the maximum value (section A in FIG. 2). On the other hand, the DC voltage E3 can be detected at the maximum setting distance (B in Fig. 2).
When the output of the adder circuit 9 obtained by adding the output Eb of the amplifier 8 and the DC voltage E3 when installed in , is set to a value such that the output of the amplifier circuit 5 is equal to the discrimination level E4. Expressed mathematically, the voltage E3 is (Eb+E3×10
= E4 is preset to a voltage value that satisfies.

このように、直流電圧E3および弁別レベルE
4を設定することにより、増幅回路5の増幅率が
大きくなるに伴い、前記受光信号がゼロのときの
増幅回路5の出力と弁別レベルE4との差が最小
になるように構成される。すなわち、検知器が検
知対象物の近く(第2図のA部)に設置された場
合、直流電圧E3は増幅器8の出力E6よりも充
分小さいため、これを無視することができる。し
たがつて、この場合、増幅回路5の増幅率が1と
なるように設定される。一方、該検知器が検知対
象物から最大距離を隔てて設置された場合(第2
図のB部)、増幅器8の出力が小さくとも、これ
に直流電圧E3が付加されるため、増幅回路5の
増幅率が比較的小さくても(例えば、10倍)弁別
レベルE4と略等しくすることができる。
In this way, the DC voltage E3 and the discrimination level E
By setting 4, the difference between the output of the amplifier circuit 5 when the received light signal is zero and the discrimination level E4 is minimized as the amplification factor of the amplifier circuit 5 increases. That is, when the detector is installed near the object to be detected (section A in FIG. 2), the DC voltage E3 is sufficiently smaller than the output E6 of the amplifier 8, so it can be ignored. Therefore, in this case, the amplification factor of the amplifier circuit 5 is set to 1. On the other hand, if the detector is installed at the maximum distance from the object to be detected (second
(Part B in the figure), even if the output of the amplifier 8 is small, the DC voltage E3 is added to it, so even if the amplification factor of the amplifier circuit 5 is relatively small (for example, 10 times), it should be approximately equal to the discrimination level E4. be able to.

第5図は本実施例に係る光電スイツチにおけ
る、検知器の設定距離と増幅回路5の可変抵抗器
VRの値との相関を示す説明図である。但し、抵
抗値は、可変抵抗器VR(ポテンシヨメータ)の
相対的な回転角(0〜1)で示されており、これ
は増幅回路5の増幅率とリニアの関係にある。
FIG. 5 shows the set distance of the detector and the variable resistor of the amplifier circuit 5 in the photoelectric switch according to this embodiment.
FIG. 3 is an explanatory diagram showing the correlation with the value of VR. However, the resistance value is indicated by the relative rotation angle (0 to 1) of the variable resistor VR (potentiometer), and this has a linear relationship with the amplification factor of the amplifier circuit 5.

図において、C1は第1図bに示した従来装置
を用いた場合の相関を、C2は第3図に示した本
実施例の相関をそれぞれ示している。同図より明
らかなように、本実施例によれば、設定距離の変
化に対応する可変抵抗器VRの回転角の変化が従
来装置に比較して小さいので、検知器の設定距離
におうじた最適の増幅率を容易に設定することが
できる。
In the figure, C1 shows the correlation when the conventional device shown in FIG. 1b is used, and C2 shows the correlation in the present embodiment shown in FIG. 3. As is clear from the figure, according to this embodiment, the change in the rotation angle of the variable resistor VR corresponding to the change in the set distance is smaller than that in the conventional device, so that the set distance of the detector can be optimally adjusted. The amplification factor can be easily set.

なお、上述の実施例では、いわゆる反射型の検
知器を例に採つて説明したが、これはいわゆる透
過型の検知器であつてもよいことは勿論である。
In the above embodiment, a so-called reflection type detector was taken as an example, but it goes without saying that a so-called transmission type detector may also be used.

(ヘ) 効果 この発明に係る光電スイツチは、受光信号を与
えられる増幅器の増幅率が大きくなるに伴い、受
光信号がゼロのときの前記増幅器の出力と弁別レ
ベルとの差が小さくなるように構成されているか
ら、検知器の設定距離に応じて、最適の増幅率を
容易に設定することができる。
(F) Effect The photoelectric switch according to the present invention is configured such that as the amplification factor of the amplifier to which the received light signal is applied increases, the difference between the output of the amplifier and the discrimination level when the received light signal is zero becomes smaller. Therefore, the optimum amplification factor can be easily set according to the set distance of the detector.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の光電スイツチの説明図、第2図
は受光素子の相対受光出力と検出距離(検知部か
ら被検知対象物までの距離)との関係を示す説明
図、第3図はこの発明に係る光電スイツチの一実
施例の構成を略示したブロツク図、第4図は加算
回路9と次段の増幅器5の具体的な構成例を示す
回路図、第5図は本実施例に係る光電スイツチに
おける、検知器の決定距離と増幅器5の可変抵抗
VRの値との相関を示す説明図である。 1……投光駆動回路、2……投光素子、3……
受光素子、4……検知対象物、5……増幅回路、
6……弁別器、7……出力回路、9……加算回
路。
Figure 1 is an explanatory diagram of a conventional photoelectric switch, Figure 2 is an explanatory diagram showing the relationship between the relative light reception output of the light receiving element and the detection distance (distance from the detection part to the object to be detected), and Figure 3 is an explanatory diagram of the conventional photoelectric switch. A block diagram schematically showing the configuration of one embodiment of the photoelectric switch according to the invention, FIG. 4 is a circuit diagram showing a specific configuration example of the adder circuit 9 and the next stage amplifier 5, and FIG. The determined distance of the detector and the variable resistance of the amplifier 5 in such a photoelectric switch
FIG. 3 is an explanatory diagram showing the correlation with the value of VR. 1...Light emission drive circuit, 2...Light emission element, 3...
Light receiving element, 4... Sensing object, 5... Amplifying circuit,
6...discriminator, 7...output circuit, 9...addition circuit.

Claims (1)

【特許請求の範囲】 1 検知対象物に光を照射する投光素子と、この
投光素子からの光を受光し、受光信号を発生する
受光素子と、 この受光素子の受光信号に所定の直流電圧を加
算する加算回路と、 この加算回路の出力が入力され、この出力が小
さくなるに伴い増幅率が大きく設定される増幅回
路と、 この増幅回路の出力と、弁別レベルとが入力さ
れ、これらを比較することにより検知対象物の有
無を検出する弁別器とを具備しており、 前記弁別レベルは、前記増幅回路に入力される
受光信号がゼロの時の増幅回路の出力との差が最
小に設定され、 かつ前記直流電圧は、加算回路の出力を増幅回
路の最大増幅率で増幅した場合に前記弁別レベル
に等しくなるように設定されていることを特徴と
する光電スイツチ。
[Scope of Claims] 1. A light emitting element that irradiates light onto an object to be detected, a light receiving element that receives light from the light emitting element and generates a light receiving signal, and a predetermined direct current applied to the light receiving signal of the light receiving element. An adder circuit that adds voltages, an amplifier circuit to which the output of this adder circuit is input and whose amplification factor is set larger as the output decreases, and the output of this amplifier circuit and a discrimination level are input. and a discriminator that detects the presence or absence of the detection target by comparing the levels, and the discrimination level is set at a level at which the difference between the output of the amplifier circuit and the output of the amplifier circuit when the received light signal input to the amplifier circuit is zero is set. , and the DC voltage is set to be equal to the discrimination level when the output of the adder circuit is amplified by the maximum amplification factor of the amplifier circuit.
JP8738184A 1984-04-27 1984-04-27 Photoelectric switch Granted JPS60230717A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8738184A JPS60230717A (en) 1984-04-27 1984-04-27 Photoelectric switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8738184A JPS60230717A (en) 1984-04-27 1984-04-27 Photoelectric switch

Publications (2)

Publication Number Publication Date
JPS60230717A JPS60230717A (en) 1985-11-16
JPH0329208B2 true JPH0329208B2 (en) 1991-04-23

Family

ID=13913314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8738184A Granted JPS60230717A (en) 1984-04-27 1984-04-27 Photoelectric switch

Country Status (1)

Country Link
JP (1) JPS60230717A (en)

Also Published As

Publication number Publication date
JPS60230717A (en) 1985-11-16

Similar Documents

Publication Publication Date Title
US5905576A (en) Optical displacement measurement device and optical displacement measurement system
US6492652B2 (en) Opto-electronic distance sensor and method for the opto-electronic distance measurement
JPH01257227A (en) Photodetector
JPH0329208B2 (en)
JP2674110B2 (en) Temperature compensation circuit for avalanche photodiode bias circuit
JPH03189584A (en) Distance measuring instrument
JP2747187B2 (en) Photoelectric switch
JP2942046B2 (en) Optical ranging sensor
JPH0433164B2 (en)
JPH0638069B2 (en) Differential refractometer
JPH0453589Y2 (en)
JPS61187415A (en) Photoelectric switch
JPS6313140B2 (en)
JPH01169386A (en) distance measuring device
JPS62146010A (en) Detecting switch
JPH04137832A (en) Optical reception circuit
JPS6038604Y2 (en) Paper sheet detection device
JPH05145393A (en) Photoelectric switch
JPH0545926Y2 (en)
JPS6159445B2 (en)
JPH0712592A (en) Displacement origin detector
JPH0648197B2 (en) Zero correction sensor circuit
JPH0332029B2 (en)
JPS62146011A (en) Detecting switch
JPH043138B2 (en)