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JPH0330297B2 - - Google Patents
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JPH0330297B2 - - Google Patents

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Publication number
JPH0330297B2
JPH0330297B2 JP55183896A JP18389680A JPH0330297B2 JP H0330297 B2 JPH0330297 B2 JP H0330297B2 JP 55183896 A JP55183896 A JP 55183896A JP 18389680 A JP18389680 A JP 18389680A JP H0330297 B2 JPH0330297 B2 JP H0330297B2
Authority
JP
Japan
Prior art keywords
paste
substrate
gas
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55183896A
Other languages
Japanese (ja)
Other versions
JPS57109344A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP55183896A priority Critical patent/JPS57109344A/en
Publication of JPS57109344A publication Critical patent/JPS57109344A/en
Publication of JPH0330297B2 publication Critical patent/JPH0330297B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Die Bonding (AREA)

Description

【発明の詳細な説明】 本発明は半導体装置の製造工程の一つである半
導体素子ペレツトを所定の基板に固着する方法及
びその装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method and apparatus for fixing a semiconductor element pellet to a predetermined substrate, which is one of the manufacturing steps of a semiconductor device.

一般の半導体装置では、リードフレームやセラ
ミツクベース等の基板上に半導体素子ペレツトを
固着した上で、レジンやセラミツクキヤツプを用
いてこれを封止している。この素子ペレツトの固
着には通常Au−Si共晶やAgペーストを利用して
いるが、金価格の高騰や省金対策の上からはAg
ペーストを使用することが好ましい。しかしなが
ら、Agペーストを利用したペレツト付け構造で
は、特にこれをレジンモールドパツケージした場
合に半導体装置の耐湿性が低くなるという問題が
生じている。 In a typical semiconductor device, a semiconductor element pellet is fixed onto a substrate such as a lead frame or a ceramic base, and then sealed using a resin or a ceramic cap. Normally, Au-Si eutectic or Ag paste is used to fix the element pellets, but due to the soaring gold price and the need to save money, Ag
Preferably, a paste is used. However, the pellet attachment structure using Ag paste has a problem in that the moisture resistance of the semiconductor device is low, especially when it is packaged in a resin mold.

即ちAgペーストを利用したペレツト付構造で
は、Agペーストを加熱溶融するペレツト付時や
キユラー加熱時に、Agペーストからガスや不純
物が発生し、これがペレツト表面やリードフレー
ム表面に付着してしまう。このため、この状態で
ペレツトやリードフレームをレジンモールドパツ
ケージしたものでは、第１図に示すように、ペレ
ツト１表面、リードフレーム２とタブ３やリード
４の表面とレンジ５との界面に不純物の存在によ
る密接（接着）が不充分な箇所が生成される。し
たがつて、この接着不良箇所を通して空気中の水
分がレジン５内に浸入し、ペレツト１、リード４
更にはワイヤ６の表面に付着してこれらを腐食さ
せ、半導体装置の耐温性を低下させてしまうので
ある。 That is, in a pellet-attached structure using Ag paste, gas and impurities are generated from the Ag paste when the Ag paste is attached to the pellet by heating and melting, or during the heating process, and these gases and impurities adhere to the pellet surface and the lead frame surface. Therefore, when pellets or lead frames are packaged in a resin mold in this state, impurities may be present on the surface of pellet 1, the interface between lead frame 2 and tab 3, and the surface of lead 4 and range 5, as shown in Figure 1. Due to the presence of the adhesive, areas where the close contact (adhesion) is insufficient are generated. Therefore, moisture in the air infiltrates into the resin 5 through this defective adhesion area, causing the pellets 1 and leads 4 to
Furthermore, it adheres to the surface of the wire 6 and corrodes it, reducing the temperature resistance of the semiconductor device.

したがつて、本発明の目的はペーストにペレツ
ト付を行なう際にペレツト乃至その近傍に熱風を
吹付けるとともに発生するガスを吸引除去するこ
とにより、ペーストを加熱溶融してペレツト付を
可能にする一方で、ペーストから発生したガスや
不純物を吸引除去してペレツトやリード等の表面
への付着を防止し、これによりパツケージ用レジ
ンとペレツトやリード等との接着性を向上して耐
湿性に優れた半導体製造方法を提供することにあ
る。 Therefore, an object of the present invention is to heat and melt the paste and make it possible to attach pellets by blowing hot air onto the pellets or the vicinity thereof and sucking out the generated gas when attaching pellets to the paste. The gas and impurities generated from the paste are removed by suction to prevent them from adhering to the surfaces of pellets, leads, etc., and this improves the adhesion between the package resin and the pellets, leads, etc., resulting in excellent moisture resistance. An object of the present invention is to provide a semiconductor manufacturing method.

本発明の要旨は、基板上に半導体ペレツトをペ
ーストを用いてペレツト付けする半導体装置の製
造方法において、前記基板を静止させた状態で前
記基板の上方側から前記基板上近傍へ向けて清浄
な加熱気体を流し、前記基板上近傍に至つた気体
を前記基板の下方側近傍へ吸引する気流を形成
し、前記加熱気体に起因するペーストの加熱に伴
つて前記ペーストから発生するガス又は不純物の
うちの少なくとも一方を前記気流に乗せて前記基
板の下方側近傍へと吸引除去することを特徴とす
る半導体装置の製造方法にある。 The gist of the present invention is to provide a method for manufacturing a semiconductor device in which semiconductor pellets are attached onto a substrate using a paste, in which clean heating is performed from above the substrate toward the vicinity of the top of the substrate while the substrate is stationary. A gas flow is formed to draw the gas that has reached the vicinity of the top of the substrate to the vicinity of the lower side of the substrate, and the gas or impurities generated from the paste due to the heating of the paste due to the heated gas are removed. The method of manufacturing a semiconductor device is characterized in that at least one of the parts is carried by the airflow and is suctioned and removed near the lower side of the substrate.

以下、本発明を図示の実施例に基づいて説明す
る。 Hereinafter, the present invention will be explained based on illustrated embodiments.

第２図は本発明の半導体製造装置、具体的に言
えばペレツト付装置を示している。図において、
７はリードフレーム支持台であり、半導体装置の
基板であるリードフレーム２を載置する。このリ
ードフレーム支持台７には上下方向に複数子のガ
ス吸引孔８を設けてあり、このガス吸引孔８の上
部開口８ａは前記リードフレーム２のタブ３やリ
ード４の間隙に臨ませ、下部開口８ｂは吸引ポン
プ（真空ポンプ）９に連通接続している。一方、
前記リードフレーム支持台７の上方には、前記タ
ブ３上にセツトしたAgペースト１０及び素子ペ
レツト１の直上位置にガスノズル１１を下方に向
けて配置している。ガスノズル１１からはN2等
の不活性ガスを噴射でき、ペレツト１表面に当射
させる。また、このガスノズル１１の側方には赤
外線加熱ランプ１２，１２を配置し、前記ペレツ
ト１、Agペースト１０、タブ３及びガスノズル
１１から噴射されたガスを加熱するようにしてい
る。図中、１３はランプ出力調整器で、加熱温度
を調整することができる。 FIG. 2 shows a semiconductor manufacturing apparatus of the present invention, specifically a pelletizing apparatus. In the figure,
Reference numeral 7 denotes a lead frame support stand on which the lead frame 2, which is the substrate of the semiconductor device, is placed. This lead frame support base 7 is provided with a plurality of gas suction holes 8 in the vertical direction, and the upper opening 8a of the gas suction hole 8 faces the gap between the tabs 3 and leads 4 of the lead frame 2, and the lower part The opening 8b is connected to a suction pump (vacuum pump) 9. on the other hand,
Above the lead frame support 7, a gas nozzle 11 is placed directly above the Ag paste 10 and the element pellet 1 set on the tab 3, with a gas nozzle 11 facing downward. Inert gas such as N 2 can be injected from the gas nozzle 11 and is made to hit the surface of the pellet 1. Further, infrared heating lamps 12, 12 are arranged on the sides of this gas nozzle 11 to heat the pellet 1, the Ag paste 10, the tab 3, and the gas injected from the gas nozzle 11. In the figure, 13 is a lamp output regulator that can adjust the heating temperature.

したがつて、以上の構成のペレツト付装置によ
れば、リードフレーム２へのペレツト付方法は次
のように行なうことができる。まず、リードフレ
ーム２をリードフレーム支持台７上に設置した上
でタブ３上にAgペースト１０盛り、更にその上
にペレツト１を載置する。ペレツト１には若干の
荷重を加えてタブ３表面に押圧しておくことが好
ましい。次に、ランプ出力調整器１８を操作して
赤外線加熱ランプ１２を点灯する一方、ガスノズ
ル１１からガスを噴射させてペレツト１やリード
フレーム２に当射させる。これにより、ペレツト
１やリードフレーム２はもとより、Agペースト
１０が赤外線加熱ランプ１２の熱量や或いはこの
ランプ１２により加熱されたガスの熱量によつて
加熱され、溶融される。Agペースト１０の溶融
によりペレツト１はタブ３に固着される。他方、
ガスの噴射と略同時に吸引ポンプ９を駆動させ、
ペレツト１近傍のガスや空気をガス吸引孔８の上
部開口８ａから吸引除去する。したがつて、Ag
ペースト１０の溶融に伴つてAgペースト１０か
ら発生したガスや不純物は、上部開口８ａから吸
引されて除去されペレツト１やリード４の表面に
付着することが防止される。また、仮に上方に舞
い上つた不純物がペレツト１やリード４の表面に
付着するようなことがあつても、ガスノズル１１
から噴射されるガスの噴射圧力によつて表面から
吹き飛され、最終的には吸引除去されることにな
る。 Therefore, according to the pellet attaching device having the above structure, pellets can be attached to the lead frame 2 in the following manner. First, the lead frame 2 is placed on the lead frame support 7, ten Ag pastes are placed on the tabs 3, and the pellets 1 are placed on top of the Ag paste. It is preferable to apply a slight load to the pellet 1 and press it against the surface of the tab 3. Next, the lamp output regulator 18 is operated to turn on the infrared heating lamp 12, while gas is injected from the gas nozzle 11 to hit the pellets 1 and lead frame 2. As a result, not only the pellet 1 and the lead frame 2 but also the Ag paste 10 are heated and melted by the heat of the infrared heating lamp 12 or the heat of the gas heated by the lamp 12. The pellet 1 is fixed to the tab 3 by melting the Ag paste 10. On the other hand,
Drive the suction pump 9 almost simultaneously with the injection of gas,
Gas and air near the pellet 1 are removed by suction through the upper opening 8a of the gas suction hole 8. Therefore, Ag
Gas and impurities generated from the Ag paste 10 as the paste 10 melts are removed by suction from the upper opening 8a, and are prevented from adhering to the surfaces of the pellets 1 and leads 4. Furthermore, even if the impurities that have flown upward are attached to the surfaces of the pellets 1 and leads 4, the gas nozzle 11
The gas is blown away from the surface by the pressure of the gas injected from the surface, and is eventually removed by suction.

なお、前述のようにしてペレツト付を行なつた
後は、赤外線加熱ランプ１２による加熱温度を低
下すれば、そのまゝの状態でキユアに移行するこ
とができる。また、キユアの完了後には、ペレツ
ト１とリード４とをワイ接続し、レジンを用いて
モールドパツケージすることにより半導体装置を
製造することができる。 Incidentally, after pelletizing as described above, if the heating temperature by the infrared heating lamp 12 is lowered, it is possible to proceed to curing in that state. Further, after curing is completed, a semiconductor device can be manufactured by connecting the pellet 1 and the lead 4 with a wire and molding the package using resin.

以上の方法によれば、Agペースト１０の加熱
溶融に伴なつて発生するガスや不純物は、ガスノ
ズル１１から噴射されるガスと、吸引ポンプ９の
作用によつてペレツト１近傍雰囲気から除去され
るので、ペレツト１やリード４表面への不純物の
付着を確実に防止できる。これにより、レジンモ
ールドパツケージを行なつた半導体装置では、少
なくともペレツトやリードとレジンとの界面の接
着性は極めて良好なものとなり、水分の浸入を防
いでその耐湿性を格段に向上することができる。 According to the above method, the gas and impurities generated as the Ag paste 10 is heated and melted are removed from the atmosphere near the pellet 1 by the gas injected from the gas nozzle 11 and the action of the suction pump 9. , it is possible to reliably prevent impurities from adhering to the surfaces of the pellets 1 and leads 4. As a result, in a semiconductor device using a resin mold package, the adhesion at least at the interface between the pellet or lead and the resin is extremely good, preventing moisture intrusion and greatly improving the moisture resistance. .

第３図及び第４図には本発明装置の夫々異なる
他の実施例を示しており、図中第２図に対応する
部分には同一符号を付して説明を省略する。 FIGS. 3 and 4 show other different embodiments of the apparatus of the present invention, and parts corresponding to those in FIG. 2 are denoted by the same reference numerals and their explanation will be omitted.

第３図の実施例は、赤外線加熱ランプを除去し
た代りにヒータ１４をガスノズル１１の内部に配
設したものであり、ガスノズル１１から噴射され
るガスを加熱した上でペレツト１やリード４等に
当射させ、その熱量にてAgペーストを溶融しよ
うとするものである。ガスの当射及び吸引ポンプ
９の作用によりペレツト等の表面への不純物の付
着を防止し得ることは前例と同じである。 In the embodiment shown in FIG. 3, a heater 14 is provided inside the gas nozzle 11 instead of the infrared heating lamp, and after heating the gas injected from the gas nozzle 11, it is heated to the pellets 1, reeds 4, etc. It is intended to melt the Ag paste with the amount of heat it receives. As in the previous example, adhesion of impurities to the surface of pellets etc. can be prevented by the application of gas and the action of the suction pump 9.

第４図の実施例は、ヒータ１５をリードフレー
ム支持体７の内部に配置したものであり、タブ３
を通して伝達される熱によつてAgペースト１０
を加熱溶融する。ガスノズル１１からのガスの当
射及び吸引ポンプ９の作用により不純物の付着を
防止することは言うまでもない。 In the embodiment shown in FIG. 4, the heater 15 is arranged inside the lead frame support 7, and the tab 3
Ag paste by heat transferred through 10
Heat to melt. Needless to say, adhesion of impurities is prevented by the application of gas from the gas nozzle 11 and the action of the suction pump 9.

以上のように本発明の半導体装置の製造方法に
よれば、ペーストを加熱してペレツト付を行なう
際に、ペレツト等の表面にガスを噴射する一方で
吸引ポンプによりペレツト近傍のガスを吸引除去
するので、ペレツト等の表面へ不純物が付着する
ことを確実に防止でき、これによりパツケージ用
レジンとの接着性を向上して耐湿性の高い半導体
装置を製造することができる。 As described above, according to the method for manufacturing a semiconductor device of the present invention, when heating the paste and attaching it to pellets, gas is injected onto the surface of the pellet, etc., and at the same time, the gas near the pellet is sucked and removed by the suction pump. Therefore, it is possible to reliably prevent impurities from adhering to the surface of pellets, etc., thereby improving the adhesion to the packaging resin and making it possible to manufacture semiconductor devices with high moisture resistance.

また、本発明の製造装置によれば、ペレツト等
の表面へガスを噴射するガスノズルと、ペレツト
近傍のガスを吸引する吸引ポンプと、加熱手段と
を備えているので、ペレツトを溶融してペレツト
付を行なうのと同時にペレツト等に付着しようと
する不純物を飛散かつ吸引除去することができ、
ペレツト付作業を短時間で完了させることができ
る。 Furthermore, the manufacturing apparatus of the present invention includes a gas nozzle for injecting gas onto the surface of pellets, a suction pump for sucking gas near the pellets, and a heating means, so that the pellets can be melted and attached to the pellets. At the same time, impurities that try to adhere to pellets, etc. can be scattered and removed by suction.
Pelleting work can be completed in a short time.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の半導体装置の不具合を説明する
ための断面図、第２図は本発明装置の断面構成
図、第３図及び第４図は夫々異なる他の実施例の
断面構成図である。 １……素子ペレツト、２……リードフレーム、
３……タブ、４……リード、５……レジン、７…
…リードフレーム支持台、８……ガス吸引孔、９
……吸引ポンプ、１０……Agペースト、１１…
…ガスノズル、１２……赤外線加熱ランプ、１
４，１５……ヒータ。 FIG. 1 is a cross-sectional view for explaining defects in a conventional semiconductor device, FIG. 2 is a cross-sectional view of the device of the present invention, and FIGS. 3 and 4 are cross-sectional views of other different embodiments. . 1...Element pellet, 2...Lead frame,
3...Tab, 4...Lead, 5...Resin, 7...
... Lead frame support stand, 8 ... Gas suction hole, 9
...Suction pump, 10...Ag paste, 11...
...Gas nozzle, 12...Infrared heating lamp, 1
4,15...Heater.

Claims (1)

【特許請求の範囲】 １ 基板上に半導体ペレツトをペーストを用いて
ペレツト付けする半導体装置の製造方法におい
て、前記基板を静止させた状態で前記基板の上方
側から前記基板上近傍へ向けて清浄な加熱気体を
流し、前記基板上近傍に至つた気体を前記基板の
下方側近傍へ吸引する気流を形成し、前記加熱気
体に起因する前記ペーストの加熱に伴つて前記ペ
ーストから発生するガス又は不純物のうちの少な
くとも一方を前記気流に乗せて前記基板の下方側
近傍へと吸引除去することを特徴とする半導体装
置の製造方法。 ２ 前記ペーストは銀ペーストであることを特徴
とする特許請求の範囲第１項記載の半導体装置の
製造方法。 ３ 前記加熱手段は、加熱された気体を噴きつけ
て前記ペーストの略全体を略一様に加熱するよう
に構成されていることを特徴とする特許請求の範
囲第１項又は第２項記載の半導体装置の製造方
法。 ４ 前記加熱手段は、ヒータによる熱伝導により
前記ペーストの略全体を略一様に加熱するように
構成されていることを特徴とする特許請求の範囲
第１項又は第２項記載の半導体装置の製造方法。 ５ 前記基板は、リードフレーム又はセラミツク
ベースであることを特徴とする特許請求の範囲第
１項、第２項、第３項又は第４項記載の半導体装
置の製造方法。[Scope of Claims] 1. In a method for manufacturing a semiconductor device in which semiconductor pellets are attached onto a substrate using paste, a method for manufacturing a semiconductor device in which a semiconductor pellet is attached onto a substrate using a paste, in which the substrate is kept stationary and a clean sample is applied from the upper side of the substrate toward the vicinity of the top of the substrate. A heated gas is flown to form an air current that sucks the gas that has reached the vicinity of the top of the substrate to the vicinity of the lower side of the substrate, and removes gas or impurities generated from the paste as the paste is heated due to the heated gas. A method for manufacturing a semiconductor device, characterized in that at least one of them is carried by the airflow and removed by suction to a lower side of the substrate. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the paste is a silver paste. 3. The heating means according to claim 1 or 2, wherein the heating means is configured to spray heated gas to substantially uniformly heat substantially the entire paste. A method for manufacturing a semiconductor device. 4. The semiconductor device according to claim 1 or 2, wherein the heating means is configured to substantially uniformly heat substantially the entire paste by heat conduction by a heater. Production method. 5. The method of manufacturing a semiconductor device according to claim 1, 2, 3, or 4, wherein the substrate is a lead frame or a ceramic base.
JP55183896A 1980-12-26 1980-12-26 Manufacture and its apparatus for semiconductor device Granted JPS57109344A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55183896A JPS57109344A (en) 1980-12-26 1980-12-26 Manufacture and its apparatus for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55183896A JPS57109344A (en) 1980-12-26 1980-12-26 Manufacture and its apparatus for semiconductor device

Publications (2)

Publication Number Publication Date
JPS57109344A JPS57109344A (en) 1982-07-07
JPH0330297B2 true JPH0330297B2 (en) 1991-04-26

Family

ID=16143702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55183896A Granted JPS57109344A (en) 1980-12-26 1980-12-26 Manufacture and its apparatus for semiconductor device

Country Status (1)

Country Link
JP (1) JPS57109344A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59188129A (en) * 1983-04-08 1984-10-25 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPH0635469Y2 (en) * 1987-02-12 1994-09-14 日本電気株式会社 Conductive adhesive dryer
JPS63316444A (en) * 1987-06-19 1988-12-23 Hitachi Electronics Eng Co Ltd Heating device in silver paste curing device
JPS63316443A (en) * 1987-06-19 1988-12-23 Hitachi Electronics Eng Co Ltd Silver paste curing device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023976A (en) * 1973-07-02 1975-03-14
JPS5943819B2 (en) * 1977-01-07 1984-10-24 株式会社日立製作所 exposure equipment
JPS55121655A (en) * 1979-03-12 1980-09-18 Fujitsu Ltd Manufacture of semiconductor device
JPS57104231A (en) * 1980-12-19 1982-06-29 Fujitsu Ltd Attaching method of dice

Also Published As

Publication number Publication date
JPS57109344A (en) 1982-07-07

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