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JPH0332223B2 - - Google Patents
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JPH0332223B2 - - Google Patents

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Publication number
JPH0332223B2
JPH0332223B2 JP60117368A JP11736885A JPH0332223B2 JP H0332223 B2 JPH0332223 B2 JP H0332223B2 JP 60117368 A JP60117368 A JP 60117368A JP 11736885 A JP11736885 A JP 11736885A JP H0332223 B2 JPH0332223 B2 JP H0332223B2
Authority
JP
Japan
Prior art keywords
water
cooling
semiconductor
semiconductor module
housing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60117368A
Other languages
Japanese (ja)
Other versions
JPS61276242A (en
Inventor
Ryoichi Kajiwara
Takao Funamoto
Mitsuo Kato
Tomohiko Shida
Kyo Matsuzaka
Hiroshi Wachi
Kazuya Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60117368A priority Critical patent/JPS61276242A/en
Publication of JPS61276242A publication Critical patent/JPS61276242A/en
Publication of JPH0332223B2 publication Critical patent/JPH0332223B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/70Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77Auxiliary members characterised by their shape
    • H10W40/776Arrangements for jet impingement, e.g. for spraying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/877Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、密閉循環型水冷却方式のマルチチツ
プ半導体モジユールの改良に係り、特に気密封止
された半導体モジユール内のLSI裸チツプを冷却
構造体からの水もれから保護するための保守技術
に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to improvement of a multi-chip semiconductor module using a closed circulation type water cooling method, and in particular, the present invention relates to the improvement of a multi-chip semiconductor module using a closed circulation type water cooling method. Concerning maintenance techniques to protect water from water leakage.

〔発明の背景〕 最近のマルチチツプ半導体モジユールにおいて
は、半導体技術の発達に伴い1個のチツプ素子か
ら発生する熱量は増加を続け、強制空冷型の手段
では半導体チツプを充分に冷却することができ
ず、事実上ほぼ空冷型の冷却性能の限界に達して
いる。このため、特に高速データ処理装置や同種
の装置における半導体モジユールに関しては、例
えば特開昭57−159050号公報に開示されているよ
うな浸漬型沸騰冷却方式や特公昭56−31743号公
報に開示されているような密閉循環型水冷却方式
など液体を用いた冷却装置が考案されている。
[Background of the Invention] In recent multi-chip semiconductor modules, the amount of heat generated from one chip element continues to increase with the development of semiconductor technology, and forced air cooling cannot cool semiconductor chips sufficiently. In fact, the cooling performance of the air-cooled type has almost reached its limit. For this reason, especially regarding semiconductor modules in high-speed data processing devices and similar devices, the immersion boiling cooling method as disclosed in Japanese Patent Application Laid-open No. 57-159050 and the method disclosed in Japanese Patent Publication No. 56-31743 are particularly important. Cooling devices that use liquid, such as the closed circulation water cooling system shown in

前者の浸漬型沸騰冷却方式は、後者の水冷却方
式に比べて冷却効率が低いものの、半導体モジユ
ールを封止した密閉容器内に誘電性冷却媒体を封
入するだけでよく、構造が後者の冷却方式に比べ
て簡単であるという利点がある。しかしながら、
現在最も分解に対して安定であるパーフルオロカ
ーボン系の低沸点冷却媒体を用いた場合でもそれ
が微量ながら水分と反応して沸化水素を発生し、
配線材料や半導体素子そのものを損傷する恐れが
あること、また冷却媒体そのものが一種の有機溶
媒であるため、有機系の多層配線基板を用いるこ
とができないといつた問題がある。
Although the former immersion boiling cooling method has lower cooling efficiency than the latter water cooling method, it only requires a dielectric cooling medium to be enclosed in a sealed container that seals the semiconductor module, and its structure is lower than that of the latter water cooling method. It has the advantage of being simpler than . however,
Even when using perfluorocarbon-based low-boiling coolant, which is currently the most stable against decomposition, it still reacts with water, albeit in a small amount, to generate hydrogen fluoride.
There are problems in that there is a risk of damaging the wiring material and the semiconductor element itself, and that the cooling medium itself is a type of organic solvent, making it impossible to use an organic multilayer wiring board.

一方後者の密閉循環型水冷却方式では、冷却効
率が最も高くしかも配線や半導体素子への直接的
な悪影響がないという利点があるものの、冷却構
造体が複雑でかつ薄肉材を用いる必要があるた
め、腐食などによる冷却構造体の長期的信頼性が
乏しく、冷却水の漏れによる回路の誤動作や半導
体素子の損傷の可能性が高いという問題がある。
On the other hand, the latter closed circulation water cooling method has the advantage of having the highest cooling efficiency and no direct negative impact on wiring or semiconductor elements, but the cooling structure is complex and requires the use of thin materials. There are problems in that the long-term reliability of the cooling structure is poor due to corrosion, etc., and there is a high possibility of circuit malfunction or damage to semiconductor elements due to leakage of cooling water.

このように浸漬型沸騰冷却方式及び密閉循環型
水冷却方式にはそれぞれ固有の問題点があるが、
後者の水冷却方式は冷却構造体の信頼性を増しか
つ水漏れ対策を講じれば実用上の問題が解決で
き、前者の沸騰冷却方式に比べて有望と考えられ
る。しかし現在まで、特に超高速大型計算機の半
導体モジユールを対象とした液体冷却方式や構造
について種々の提案がされているものの、その水
漏れ対策のための保守管理面については具体的な
アイデアが提案されていない。
In this way, the immersion boiling cooling method and the closed circulation water cooling method each have their own problems.
The latter water cooling method can solve practical problems by increasing the reliability of the cooling structure and taking measures against water leakage, and is considered more promising than the former boiling cooling method. However, to date, although various proposals have been made regarding liquid cooling methods and structures, particularly for semiconductor modules in ultra-high-speed large-scale computers, no concrete ideas have been proposed regarding maintenance management to prevent water leakage. Not yet.

事前に水漏れ対策を講ずるべく水漏れ発生時期
を予め予知するために、冷却構造体の腐食状況を
モニタリングする方法が考えられる。この方法に
は冷却水中に溶出した金属イオンの量を検出する
方法や冷却水の電気抵抗を測定する方法が考えら
れるが、これらは全体の平均的な腐食状況しか判
定できず、〓間腐食や孔食などの局部腐食に対し
ては腐食進行状況のモニタリングが困難であり、
水漏れ対策に十分であるとは言い難い。
In order to predict in advance when a water leak will occur so that countermeasures can be taken in advance, a method of monitoring the corrosion state of the cooling structure may be considered. Possible methods for this include detecting the amount of metal ions eluted into the cooling water or measuring the electrical resistance of the cooling water, but these methods can only determine the overall average corrosion state, and do not cause intermittent corrosion or It is difficult to monitor the progress of localized corrosion such as pitting corrosion.
It is difficult to say that this is sufficient to prevent water leakage.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、密閉循環型水冷却方式のマル
チチツプ半導体モジユールにおいて、冷却構造体
が腐食等により水漏れを生じた場合に、半導体モ
ジユール内に急激に水が侵入するのを防ぎかつ即
座に水漏れの発生を検知して保守処置を講じるこ
とができ、以て半導体モジユールの損傷を防止す
ることを可能にすることにある。
An object of the present invention is to prevent water from rapidly entering the semiconductor module and to immediately remove the water when the cooling structure leaks water due to corrosion etc. in a multi-chip semiconductor module using a closed circulation water cooling method. The object of the present invention is to detect the occurrence of leakage and take maintenance measures, thereby preventing damage to the semiconductor module.

〔発明の概要〕[Summary of the invention]

本発明に係る半導体モジユールは、半導体チツ
プを複数個搭載した配線基板と、該半導体チツプ
を個々に冷却する密閉循環水冷却構造体と、該水
冷却構造体、半導体チツプおよび少くとも配線基
板の該半導体チツプ搭載側を密封収容した密閉ハ
ウジングと、該密閉ハウジング内の空間の絶対湿
度の時間的変化を検出するために該密閉ハウジン
グ内に設置された金属酸化物系の湿度センサとを
具備したことを特徴とする。
A semiconductor module according to the present invention includes a wiring board on which a plurality of semiconductor chips are mounted, a closed circulating water cooling structure for individually cooling the semiconductor chips, and a cooling structure for cooling the water cooling structure, the semiconductor chips, and at least the wiring board. A sealed housing that hermetically houses a semiconductor chip mounting side, and a metal oxide humidity sensor installed inside the sealed housing to detect temporal changes in absolute humidity in the space inside the sealed housing. It is characterized by

〔発明の実施例〕[Embodiments of the invention]

本発明の一実施例を第1図および第2図を用い
て説明する。第1図は、電着ベローズを用いた水
冷却構造体に有機膜をコーテイングし、Siチツプ
上に金属酸化物膜を構成した湿度センサをLSIチ
ツプと共に実装した半導体モジユールの構成を示
す図であり、また第2図は、第1図の半導体モジ
ユールを複数個実装した半導体装置の保守システ
ムを示す図である。
An embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a diagram showing the configuration of a semiconductor module in which a water cooling structure using electrodeposited bellows is coated with an organic film, and a humidity sensor consisting of a metal oxide film on a Si chip is mounted together with an LSI chip. , and FIG. 2 is a diagram showing a maintenance system for a semiconductor device in which a plurality of semiconductor modules shown in FIG. 1 are mounted.

第1図において、ハウジング6の天壁に天井板
3、仕切り板4および底板5で形成された2段構
造の給水及び排水通路23,24を設け、ハウジ
ング6のモジユール内側にはLSIチツプ14に対
応した位置に排水通路24に開口する電着ベロー
ズ8をろう付けし、電着ベローズ8の先には金属
製キヤツプ9と熱伝導性が良く電気絶縁体である
セラミツク板10とから構成される冷却ブロツク
をろう付してある。電着ベローズ8の内部には給
水通路23から分岐したパイプ7を設けてあり、
給水口19から給水通路23および該パイプ7を
通つて冷却ブロツクへ効率よく冷却水が送られ、
そこから電着ベローズ8内および排水通路24を
経て排水口20へ冷却水が排出する構造となつて
いる。冷却ブロツクのセラミツク板10とLSIチ
ツプ14は、メタライズ膜11,13を介しては
んだ接続12されている。LSIチツプ14は多層
配線基板18上にはんだ接続により搭載してあ
り、15,17は夫々端子、16ははんだを示
す。多層配線基板18上のあいたスペースには数
ケの湿度センサ2をLSIチツプ14と同様はんだ
接続により搭載してある。湿度センサ2は1ppm
からの水分を検出できる高感度の金属酸化物系の
湿度センサであつて、Siチツプ上に金属酸化物膜
を形成したものとし、そのSiチツプの裏側にはは
んだ付用の金属パツドを形成し、湿度センサの電
極と該パツドを電気的に接続したものとするのが
好ましい。ハウジング6のスカート部下端は低融
点はんだ21により多層配線基板18に気密接合
してある。モジユール内においては、前記のハウ
ジング6と電着ベローズ8と冷却ブロツクとから
構成される冷却構造体の表面に、真空蒸着法によ
り形成した透湿性の有機薄膜1をコーテイングし
てある。有機薄膜のコーテイング方法は、真空蒸
着法の他にモノマーの液中に漬け電圧をかけて重
合させる電極法や、溶媒で希釈したモノマーの液
中に浸漬した後加熱して重合させる方法でも可能
である。また、モジユール内の密閉空間Aは、一
度真空状態にした後、水分を1ppm以下にした高
純度のHeガスを充填してある。
In FIG. 1, a two-stage water supply and drainage passage 23, 24 formed by a ceiling plate 3, a partition plate 4, and a bottom plate 5 is provided on the top wall of the housing 6, and an LSI chip 14 is installed inside the module of the housing 6. An electroplated bellows 8 opening into the drainage passage 24 is brazed to the corresponding position, and the tip of the electroplated bellows 8 is made up of a metal cap 9 and a ceramic plate 10 that has good thermal conductivity and is an electrical insulator. The cooling block is brazed. A pipe 7 branching from the water supply passage 23 is provided inside the electrodeposited bellows 8.
Cooling water is efficiently sent from the water supply port 19 to the cooling block through the water supply passage 23 and the pipe 7,
The structure is such that the cooling water is discharged from there through the electrodeposited bellows 8 and the drain passage 24 to the drain port 20. The ceramic plate 10 of the cooling block and the LSI chip 14 are connected by solder 12 via metallized films 11 and 13. The LSI chip 14 is mounted on a multilayer wiring board 18 by solder connection, 15 and 17 are terminals, and 16 is solder. Several humidity sensors 2 are mounted in the open spaces on the multilayer wiring board 18 by soldering like the LSI chip 14. Humidity sensor 2 is 1ppm
This is a high-sensitivity metal oxide-based humidity sensor that can detect moisture in the air, and has a metal oxide film formed on a Si chip, and a metal pad for soldering is formed on the back side of the Si chip. , it is preferable that the electrode of the humidity sensor and the pad be electrically connected. The lower end of the skirt of the housing 6 is hermetically bonded to the multilayer wiring board 18 with a low melting point solder 21. Inside the module, the surface of the cooling structure composed of the housing 6, electrodeposited bellows 8, and cooling block is coated with a moisture-permeable organic thin film 1 formed by vacuum deposition. In addition to the vacuum evaporation method, organic thin films can be coated using an electrode method in which the material is immersed in a monomer solution and polymerized by applying a voltage, or a method in which it is immersed in a monomer solution diluted with a solvent and then heated and polymerized. be. Furthermore, the sealed space A inside the module is once brought to a vacuum state and then filled with high-purity He gas with a moisture content of 1 ppm or less.

次に第2図において、前記の如く配線基板18
にハウジング6を気密封止してなる半導体モジユ
ールを数段(図では三段)重ね、マザーボード2
7,30により電気的に接続して半導体装置を構
成し、全体を気密容器28内に納めてある。冷却
水は送水ポンプ31により給水管34から各半導
体モジユールの給水口19に送り、排水口20か
らの水は熱交換器39で冷却しイオン交換樹脂を
内蔵した純水精製装置43により再生して送水ポ
ンプ31にもどし、循環させている。各半導体モ
ジユールの湿度センサ2の出力及び気密容器28
内に設置した湿度センサ29出力は監視制御装置
36でモニタしており、そして、もしこれら湿度
センサにより夫々の密閉空間内の絶対湿度の上昇
が検出されたなら、直ちに現在処理中のデータを
記憶装置37に転送させ、電源の供給を停止し、
さらに送水ポンプ31を停止し、同時に吸引ポン
プ40を駆動させて冷却水循環パイプ34,35
内が負圧となるように制御する。また、警報装置
38により作業員に警告する。
Next, in FIG. 2, as described above, the wiring board 18
Stack several layers (three layers in the figure) of semiconductor modules made by hermetically sealing the housing 6 on the motherboard 2.
7 and 30 to form a semiconductor device, and the whole is housed in an airtight container 28. Cooling water is sent by a water pump 31 from a water supply pipe 34 to the water supply port 19 of each semiconductor module, and water from the drain port 20 is cooled by a heat exchanger 39 and regenerated by a pure water purification device 43 containing an ion exchange resin. The water is returned to the water pump 31 and circulated. Output of humidity sensor 2 of each semiconductor module and airtight container 28
The output of the humidity sensors 29 installed inside the room is monitored by the monitoring control device 36, and if these humidity sensors detect an increase in the absolute humidity in each closed space, the data currently being processed is immediately stored. transfer it to the device 37, stop the power supply,
Further, the water supply pump 31 is stopped, and the suction pump 40 is simultaneously driven to cool the cooling water circulation pipes 34, 35.
Control so that there is negative pressure inside. Further, the alarm device 38 warns the worker.

本実施例によれば、冷却構造体が腐食等の理由
により水漏れを発生した場合でも、前記の有機薄
膜1は水漏れ量が急激に増加するのを防止すると
共に一時的に裸のLSIチツプ上に水滴が落ちるの
を該有機膜で防止し得る。さらに、通常、半導体
モジユールは50℃前後の湿度で使用されるため、
冷却構造体から漏れた水が微量な状態ではこれは
ほとんど気化する。このため生じた僅かな絶対湿
度の変化は1ppmからの水分を検出できる高感度
の金属酸化物系の湿度センサ2により水漏れの発
生として即座に検知されて前記の如き保守対策が
行われるため、裸のLSIチツプに水がかかつたり
湿度が高くなつたりすることによる半導体モジユ
ールの損傷を防止することが可能である。また、
Siチツプ上に金属酸化物を形成した湿度センサを
用いているので、半導体モジユールを組立てると
き、湿度センサを特別に実装する工程が不要であ
り、またその電気配線も多層配線基板内に予め布
線しておくことが可能なため、従来の半導体モジ
ユール実装工程と全く同様のはんだ付け工程によ
つて湿度センサを組込んだ半導体モジユールの組
立てが可能となる。また高純度のHeガス雰囲気
下ではセンサとして長期に亘る安定性が高いため
半導体装置としての信頼性が高くなる。
According to this embodiment, even if water leaks from the cooling structure due to corrosion or other reasons, the organic thin film 1 prevents the amount of water leakage from increasing rapidly and temporarily removes the exposed LSI chip. The organic film can prevent water droplets from falling on top. Furthermore, since semiconductor modules are normally used at humidity levels around 50°C,
If only a small amount of water leaks from the cooling structure, most of it will evaporate. Therefore, the slight change in absolute humidity that occurs is immediately detected as a water leak by the highly sensitive metal oxide humidity sensor 2 that can detect moisture from 1 ppm, and maintenance measures as described above are taken. It is possible to prevent semiconductor modules from being damaged due to exposure to water or high humidity on bare LSI chips. Also,
Since a humidity sensor made of metal oxide formed on a Si chip is used, there is no need for a special mounting process for the humidity sensor when assembling the semiconductor module, and its electrical wiring can be pre-wired within the multilayer wiring board. Therefore, it is possible to assemble a semiconductor module incorporating a humidity sensor using a soldering process that is exactly the same as a conventional semiconductor module mounting process. In addition, in a high-purity He gas atmosphere, the sensor has high stability over a long period of time, and therefore has high reliability as a semiconductor device.

第3図は、1つの冷却ブロツク(9,10より
なる)に各2個のマイクロベローズ81,82を用
いて冷却水を循環させる冷却構造体を用いた半導
体モジユールの場合の本発明の実施例を示す。第
1図と同じ符号は前述と同様の部分を示す。本実
施例では、第1図の2段構造の給水、排水通路2
3,24ではなくて、横並び構造の給水、排水通
路64,65をハウジング天壁に形成してあり、
また第1図の湿度センサ2の代りにセラミツク板
上に電極と多孔質アルミナ膜を形成した湿度セン
サ45をハウジング6のスカート部内面に実装し
てある。また、湿度センサの入出力リード線5
9,60はハーメチツクシール58により上記ス
カート部から外部に導出している。
FIG. 3 shows the present invention in the case of a semiconductor module using a cooling structure that circulates cooling water using two micro bellows 8 1 and 8 2 in one cooling block (consisting of 9 and 10). An example is shown. The same reference numerals as in FIG. 1 indicate the same parts as described above. In this embodiment, the water supply and drainage passages 2 of the two-stage structure shown in Fig. 1 are used.
3 and 24, horizontal water supply and drainage passages 64 and 65 are formed on the top wall of the housing.
Moreover, instead of the humidity sensor 2 shown in FIG. 1, a humidity sensor 45 having an electrode and a porous alumina film formed on a ceramic plate is mounted on the inner surface of the skirt portion of the housing 6. In addition, the input/output lead wire 5 of the humidity sensor
9 and 60 are led out from the skirt portion by a hermetic seal 58.

第4図は本発明の更に他の実施例を示し、この
実施例では、冷却構造体として、ハウジング6天
壁との間に冷却水通路67を形成するフレキシブ
ル金属薄膜68に、一端にフイン86を有する良
熱伝導性のブロツク形の熱伝導媒体70をろう付
けし、この熱伝導媒体70の他端をLSIチツプ1
4に接続し、上記通路67に給水口81から冷却
水85を流して、上記ブロツク70を介してチツ
プ14を冷却するようになつている。ハウジング
6、金属薄膜68、ブロツク70の表面には、前
述実施例と同様、透湿性有機薄膜1が施してあ
る。図中、第1図と同じ符号は同様の部分を示
す。本実施例では、LSIチツプと同様にSiチツプ
80の下面に金属酸化物系のセンサ回路79と電
極及びはんだ付端子75を形成した湿度センサを
実装している。
FIG. 4 shows still another embodiment of the present invention. In this embodiment, as a cooling structure, a flexible metal thin film 68 that forms a cooling water passage 67 between the top wall of the housing 6 and a fin 86 is provided at one end. A block-shaped thermal conductive medium 70 with good thermal conductivity is brazed, and the other end of this thermal conductive medium 70 is connected to the LSI chip 1.
4, cooling water 85 flows through the passage 67 from the water supply port 81, and the chip 14 is cooled through the block 70. A moisture-permeable organic thin film 1 is applied to the surfaces of the housing 6, the metal thin film 68, and the block 70, as in the previous embodiment. In the figure, the same reference numerals as in FIG. 1 indicate the same parts. In this embodiment, a humidity sensor including a metal oxide sensor circuit 79, electrodes, and solder terminals 75 is mounted on the bottom surface of a Si chip 80, similar to the LSI chip.

以上の第3図、第4図の実施例によつても、冷
却構造体からの水漏れを抑制し、かつ即座に水漏
れを検知し保守対策を行つて、半導体モジユール
の損傷を防止することができる効果があること、
この場合、第2図に示したと同様の保守システム
を用いることは勿論である。
In the embodiments shown in FIGS. 3 and 4 above, it is possible to prevent damage to semiconductor modules by suppressing water leakage from the cooling structure, immediately detecting water leakage, and taking maintenance measures. be effective,
In this case, it goes without saying that a maintenance system similar to that shown in FIG. 2 may be used.

なお、第2図における半導モジユールの据え付
けを上下逆さにしてもよい。そのようにすれば、
冷却構造体に水漏れが発生した場合でも、直接水
が裸のLSIチツプにかかることがなくなり、半導
体モジユールの損傷の可能性が低くなる。
Note that the semiconductor module in FIG. 2 may be installed upside down. If you do that,
Even if a water leak occurs in the cooling structure, water will not directly splash onto bare LSI chips, reducing the possibility of damage to the semiconductor module.

〔発明の効果〕〔Effect of the invention〕

本発明では、密閉循環型水冷却方式を採用した
半導体モジユールにおいて、半導体モジユールを
封止した密閉容器内に金属酸化物系の湿度センサ
を設置し、該容器内の絶対湿度の僅かな時間的変
化をもモニタリングするようにしたから、密閉循
環型の冷却構造体が腐食や破壊等の理由により僅
かに水漏れを生じた場合に、これが上記絶対湿度
の変化として即座に検知され、裸のLSIチツプに
水がかかつたり湿度が高くなつて半導体モジユー
ルが損傷する前に、水漏れ発生のごく初期におい
て、電気回路の電源スイツチを切つたり、冷却装
置系を制御して水圧を負圧した水漏れを抑制する
対策を行い、半導体モジユールを保守することが
可能となり、その損傷を防止し得る。
In the present invention, in a semiconductor module that employs a closed circulation water cooling method, a metal oxide humidity sensor is installed in a sealed container in which the semiconductor module is sealed, and detects slight temporal changes in absolute humidity within the container. Since the system also monitors the humidity, if there is a slight water leak in the closed circulation type cooling structure due to corrosion or destruction, this will be immediately detected as a change in the absolute humidity, and the bare LSI chip will be immediately detected. At the very beginning of a water leak, before the semiconductor module is damaged due to water splashing on it or high humidity, turn off the power switch of the electrical circuit or control the cooling system to reduce the water pressure to negative water pressure. It becomes possible to take measures to suppress leakage, maintain the semiconductor module, and prevent damage to it.

さらには水冷却構造体の密閉容器内に含まれる
表面全面を透湿性の有機膜で覆うことにより、水
冷却構造体が腐食等の理由により水漏れを発生し
た場合でも一時的に裸のLSIチツプ上に水滴が落
下するのを防ぐことができ、その間に湿度センサ
により水もれを検知し保守対策ができるため、半
導体モジユールの保守が確実となる。
Furthermore, by covering the entire surface of the water-cooled structure inside the sealed container with a moisture-permeable organic film, even if the water-cooled structure leaks due to corrosion or other reasons, the bare LSI chip can be temporarily removed. It is possible to prevent water droplets from falling on top of the device, while a humidity sensor can detect water leaks and take maintenance measures, ensuring reliable maintenance of the semiconductor module.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の断面図、第2図は
第1図の半導体モジユールを用いて構成した半導
体装置の保守システム図、第3図および第4図は
夫々本発明の他の実施例の断面図である。 1……有機薄膜、2……湿度センサ、6……ハ
ウジング、7……パイプ、8,81,82……ベロ
ーズ、9……キヤツプ、10……セラミツク板、
11,13……メタライズ膜、12……低融点は
んだ、14……LSIチツプ、18……多層配線基
板、19……給水口、20……排水口、21……
低融点はんだ、22……メタライズ膜、23……
給水通路、24……排水通路、27,30……マ
ザーボード、28……気密容器、29……湿度セ
ンサ、31……送水ポンプ、32,33……電磁
バルブ、34……給水管、35……排水管、36
……監視制御装置、37……記憶装置、38……
警報装置、39……熱交換器、40……吸引ポン
プ、41……吸引管、42……電源装置、43…
…純水精製装置、45……湿度センサ、64……
給水ダクト、65……排水ダクト、67……冷却
水通路、68……フレキシブル金属薄板、70…
…熱伝達媒体、79……センサ回路、80……Si
チツプ、81……給水口、86……冷却フイン。
FIG. 1 is a sectional view of one embodiment of the present invention, FIG. 2 is a diagram of a maintenance system for a semiconductor device configured using the semiconductor module of FIG. 1, and FIGS. It is a sectional view of an example. DESCRIPTION OF SYMBOLS 1... Organic thin film, 2... Humidity sensor, 6... Housing, 7... Pipe, 8, 8 1 , 8 2 ... Bellows, 9... Cap, 10... Ceramic plate,
11, 13...Metallized film, 12...Low melting point solder, 14...LSI chip, 18...Multilayer wiring board, 19...Water inlet, 20...Drain port, 21...
Low melting point solder, 22... Metallized film, 23...
Water supply passage, 24... Drain passage, 27, 30... Motherboard, 28... Airtight container, 29... Humidity sensor, 31... Water pump, 32, 33... Solenoid valve, 34... Water supply pipe, 35... ...Drain pipe, 36
...Monitoring control device, 37...Storage device, 38...
Alarm device, 39... Heat exchanger, 40... Suction pump, 41... Suction pipe, 42... Power supply device, 43...
...Pure water purification device, 45...Humidity sensor, 64...
Water supply duct, 65...Drainage duct, 67...Cooling water passage, 68...Flexible thin metal plate, 70...
...Heat transfer medium, 79...Sensor circuit, 80...Si
Chip, 81... Water supply port, 86... Cooling fin.

Claims (1)

【特許請求の範囲】 1 半導体チツプを複数個搭載した配線基板と、
該半導体チツプを個々に冷却する密閉循環水冷却
構造体と、該水冷却構造体、半導体チツプおよび
少くとも配線基板の該半導体チツプ搭載側を密封
収容した密閉ハウジングと、該密閉ハウジング内
の空間の絶対湿度の時間的変化を検出するために
該密閉ハウジング内に設置された金属酸化物系の
湿度センサとを具備したことを特徴とする半導体
モジユール。 2 前記金属酸化物系の湿度センサはSiチツプ上
に形成され、他の半導体チツプと同様にはんだ接
続によつて前記配線基板上に実装された特許請求
の範囲第1項記載の半導体モジユール。 3 前記密閉ハウジング内の空間に面する前記水
冷却構造体の表面および密閉ハウジングの内面は
透湿性の有機薄膜で覆われている特許請求の範囲
第1項記載の半導体モジユール。 4 前記密閉ハウジング内の空間には、水分含有
量が多くとも1ppmを越えない不活性ガスが封入
されている特許請求の範囲第1項記載の半導体モ
ジユール。
[Claims] 1. A wiring board on which a plurality of semiconductor chips are mounted;
a closed circulating water cooling structure for individually cooling the semiconductor chips; a closed housing that seals and accommodates the water cooling structure, the semiconductor chips, and at least the semiconductor chip mounting side of the wiring board; and a space inside the closed housing. 1. A semiconductor module comprising: a metal oxide humidity sensor installed within the sealed housing to detect temporal changes in absolute humidity. 2. The semiconductor module according to claim 1, wherein the metal oxide humidity sensor is formed on a Si chip and mounted on the wiring board by solder connection like other semiconductor chips. 3. The semiconductor module according to claim 1, wherein the surface of the water cooling structure facing the space within the hermetic housing and the inner surface of the hermetic housing are covered with a moisture permeable organic thin film. 4. The semiconductor module according to claim 1, wherein the space within the hermetically sealed housing is filled with an inert gas whose water content does not exceed 1 ppm at most.
JP60117368A 1985-05-30 1985-05-30 Semiconductor module Granted JPS61276242A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60117368A JPS61276242A (en) 1985-05-30 1985-05-30 Semiconductor module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60117368A JPS61276242A (en) 1985-05-30 1985-05-30 Semiconductor module

Publications (2)

Publication Number Publication Date
JPS61276242A JPS61276242A (en) 1986-12-06
JPH0332223B2 true JPH0332223B2 (en) 1991-05-10

Family

ID=14709929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60117368A Granted JPS61276242A (en) 1985-05-30 1985-05-30 Semiconductor module

Country Status (1)

Country Link
JP (1) JPS61276242A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0320198B1 (en) * 1987-12-07 1995-03-01 Nec Corporation Cooling system for IC package
EP0341950B1 (en) * 1988-05-09 1994-09-14 Nec Corporation Flat cooling structure of integrated circuit
US4975766A (en) * 1988-08-26 1990-12-04 Nec Corporation Structure for temperature detection in a package
JPH06100408B2 (en) * 1988-09-09 1994-12-12 日本電気株式会社 Cooling system
CA1304830C (en) * 1988-09-20 1992-07-07 Toshifumi Sano Cooling structure
JP2927975B2 (en) * 1991-01-24 1999-07-28 日本電気株式会社 Temperature detection structure of integrated circuit package and temperature sensor carrier
JP2728105B2 (en) * 1991-10-21 1998-03-18 日本電気株式会社 Cooling device for integrated circuits
JP2852148B2 (en) * 1991-10-21 1999-01-27 日本電気株式会社 Cooling structure of integrated circuit package

Also Published As

Publication number Publication date
JPS61276242A (en) 1986-12-06

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