JPH0332736B2 - - Google Patents
Info
- Publication number
- JPH0332736B2 JPH0332736B2 JP56110400A JP11040081A JPH0332736B2 JP H0332736 B2 JPH0332736 B2 JP H0332736B2 JP 56110400 A JP56110400 A JP 56110400A JP 11040081 A JP11040081 A JP 11040081A JP H0332736 B2 JPH0332736 B2 JP H0332736B2
- Authority
- JP
- Japan
- Prior art keywords
- output
- reference value
- sample
- detector
- backscattered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Description
【発明の詳細な説明】
この発明の高速Ｘ線マツピング装置に関し、特
に、試料に存在する割れ又は穴等を他の部分と異
なる表示にするための新規な改良に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high-speed X-ray mapping apparatus, and particularly relates to a novel improvement for displaying cracks, holes, etc. existing in a sample differently from other parts.
従来、用いられていたこの種の装置では試料の
輪郭および割れの検出は行なわれておらず、試料
の全面について同一の検出および走査を行なつて
いた。 Conventionally used devices of this type do not detect contours and cracks in the sample, but perform the same detection and scanning over the entire surface of the sample.
ところが、このような従来の構成においては、
全て走査を行なうために、測定時間が長くなると
共に、割れや穴の状態を表示面に表示することが
できなかつた。 However, in such a conventional configuration,
Since all scanning was performed, the measurement time became long and the state of cracks and holes could not be displayed on the display screen.
この発明は以上の欠点をすみやかに除去するた
めの極めて効果的な手段を提供することを目的と
するもので、特に、試料の割れ又は穴を検出し、
割れ又は穴の部分は飛び越し走査して走査時間を
短縮すると共に、割れ又は穴の部分は他の部分と
異なる表示状態にする構成に関するものである。 The purpose of this invention is to provide an extremely effective means for quickly eliminating the above-mentioned defects, and in particular, to detect cracks or holes in a sample,
The present invention relates to a structure in which the crack or hole portion is interlaced scanned to shorten the scanning time, and the crack or hole portion is displayed in a different state from other portions.
以下、図面と共にこの発明による高速Ｘ線マツ
ピング装置の好適な実施例について詳細に説明す
る。 Hereinafter, preferred embodiments of the high-speed X-ray mapping apparatus according to the present invention will be described in detail with reference to the drawings.
図面において符号１で示されるものは電子線を
発射するための電子銃であり、この電子銃１から
発射された電子線は電子レンズ２およびビーム走
査コイル３によつて制御された後に試料４に照射
されている。 In the drawings, reference numeral 1 indicates an electron gun for emitting an electron beam, and the electron beam emitted from the electron gun 1 is controlled by an electron lens 2 and a beam scanning coil 3, and then directed to a sample 4. It is irradiated.
この試料４に照射された電子線による反射電子
は反射電子検出器５により検出され反射電子検出
器５の出力は増幅器６を経て比較器７の一方の入
力に接続されている。又、試料４からの放射線は
放射線検出器８で検出され、波高弁別器９を経て
カウンタ１０に入力されている。この比較器７の
他方の入力端子にはスレツシヨルド値を設定する
ための可変抵抗器１１の一端子が接続されてい
る。さらに、比較器７とカウンタ１０の各出力は
CPU１２に入力され、CPU１２の出力はＤ／Ａ
変換器１３を介してビーム走査コイル３に入力さ
れている。さらに、CPU１２からの出力はグラ
フイツクデイスプレイ部１４としてのCRTに接
続されている。 Backscattered electrons due to the electron beam irradiated onto the sample 4 are detected by a backscattered electron detector 5, and the output of the backscattered electron detector 5 is connected to one input of a comparator 7 via an amplifier 6. Further, radiation from the sample 4 is detected by a radiation detector 8, and is input to a counter 10 via a pulse height discriminator 9. The other input terminal of the comparator 7 is connected to one terminal of a variable resistor 11 for setting a threshold value. Furthermore, each output of the comparator 7 and the counter 10 is
Input to CPU12, output of CPU12 is D/A
The signal is input to the beam scanning coil 3 via a converter 13. Furthermore, the output from the CPU 12 is connected to a CRT serving as a graphic display section 14.
以上のような構成において、この発明による高
速Ｘ線マツピング装置を作動させる場合について
述べると、電子線が試料４に照射されると試料４
からの反射電子は反射電子検出器５に入射し、こ
の反射電子検出器５からの信号は増幅器６で増幅
され、電圧出力として比較器７の一方の入力端子
に入力される。この比較器７の他の入力端子には
第２図で示されるスレツシヨルド値を設定するた
めの可変抵抗器１１の電圧出力が入力され、この
増幅器６からの出力がスレツシヨルド値よりも低
い場合、すなわち、第２図の特性図においてＢお
よびＤの部分は試料４面の割れ（Ｂ部分）および
試料４外部（Ｄ部分）に電子線が照射されている
と判別され、この状態をCPU１２に入力する。 In the above configuration, when the high-speed X-ray mapping device according to the present invention is operated, when the sample 4 is irradiated with an electron beam, the sample 4
The backscattered electrons from the backscattered electron detector 5 enter the backscattered electron detector 5, and the signal from the backscattered electron detector 5 is amplified by an amplifier 6 and inputted to one input terminal of a comparator 7 as a voltage output. The voltage output of the variable resistor 11 for setting the threshold value shown in FIG. In the characteristic diagram of FIG. 2, parts B and D are determined to be cracks on the 4th surface of the sample (part B) and the outside of the sample 4 (part D) are irradiated with the electron beam, and this state is input to the CPU 12. .
このCPU１２は比較器７からの上記のような
信号の入力により、カウンタ１０のタイマをスタ
ートさせず、つまり、放射線の強度測定を省略し
て、Ｄ／Ａ変換器１３に次の測定点に対応するデ
ータを出力する。このＤ／Ａ変換器１３の出力は
ビーム走査コイル３に入力されて電子ビームが偏
向され、次の測定点に電子線が照射される。以上
の動作を繰り返すことにより、割れおよび穴さら
には試料外部（試料端部）を極めて簡単に検出で
き、しかも、このスレツシヨルド値以下のレベル
の場合には、走査およびカウントを中止して直ち
に次の場所を照射するようにするため、試料全体
の検出分析時間が極端に短縮される。 In response to the input of the above-mentioned signal from the comparator 7, the CPU 12 does not start the timer of the counter 10, that is, it omits the radiation intensity measurement and instructs the D/A converter 13 to respond to the next measurement point. Output the data. The output of the D/A converter 13 is input to the beam scanning coil 3, the electron beam is deflected, and the next measurement point is irradiated with the electron beam. By repeating the above operations, cracks and holes as well as the outside of the sample (sample edge) can be detected extremely easily.Moreover, if the level is below this threshold value, scanning and counting will be stopped and the next one will be started immediately. Since the location is irradiated, the detection and analysis time for the entire sample is extremely shortened.
又、CPU１２から出力されるスレツシヨルド
値以下のレベルの信号はスレツシヨルド値以上の
レベルの信号の表示色とは明確に異なる色又は状
態で表示され、割れおよび穴さらには試料外部等
を容易に分析することができる。 In addition, signals output from the CPU 12 with a level below the threshold value are displayed in a color or state that is clearly different from the display color of signals with a level above the threshold value, making it easy to analyze cracks, holes, and the outside of the sample. be able to.
図面はこの発明による高速Ｘ線マツピング装置
を示すためのもので、第１図は全体を示す構成図
第２図は試料を電子線で照射した場合の反射電子
強度を示す特性図である。
１は電子銃、２は電子レンズ、３はビーム走査
コイル、４は試料、５は反射電子検出器、６は増
幅器、７は比較器、８は放射線検出器、９は波高
弁別器、１０はカウンタ、１１は可変抵抗器、１
２はCPU、１３はＤ／Ａ変換器、１４はグラフ
イツクデイスプレイ部である。
The drawings are for illustrating a high-speed X-ray mapping apparatus according to the present invention. FIG. 1 is a block diagram showing the entire structure, and FIG. 2 is a characteristic diagram showing the intensity of reflected electrons when a sample is irradiated with an electron beam. 1 is an electron gun, 2 is an electron lens, 3 is a beam scanning coil, 4 is a sample, 5 is a backscattered electron detector, 6 is an amplifier, 7 is a comparator, 8 is a radiation detector, 9 is a pulse height discriminator, 10 is a Counter, 11 is variable resistor, 1
2 is a CPU, 13 is a D/A converter, and 14 is a graphic display section.
Claims (1)
の反射電子検出器と、 前記試料からの放射線を検出するための放射線
検出器と、 電子線の走査を行なうためのビーム走査コイル
と、 基準値を設定するための基準値設定器と、 前記放射線検出器の出力を波高弁別する波高弁
別器と、 前記波高弁別器からの出力を内蔵するタイマを
スタートさせてカウントするカウンタと、 前記反射電子検出器の出力値と前記基準値設定
器の基準値とを比較する比較器と、 前記ビーム走査コイルに走査信号を印加し且つ
前記波高弁別器からの出力に基づきグラフイツク
デイスプレイにマツピングするCPUとを備え、 前記CPUは、前記比較器が前記反射電子検出
器の出力値は前記基準値設定器の基準値より低い
値であることを示す信号を出力したとき、前記カ
ウンタのタイマをスタートさせず前記ビーム走査
コイルに偏向する信号を出力し、且つ前記反射電
子検出器の出力が前記基準値以下の信号を基準値
以上の信号の表示とは異なる表示にしたことを特
徴とする高速Ｘ線マツピング装置。[Claims] 1. An electron gun for irradiating a sample with an electron beam; a backscattered electron detector for detecting backscattered electrons reflected from the sample; and a radiation detector for detecting radiation from the sample. a beam scanning coil for scanning the electron beam; a reference value setting device for setting a reference value; a pulse height discriminator for discriminating the pulse height of the output of the radiation detector; a counter that starts and counts a timer having a built-in output; a comparator that compares the output value of the backscattered electron detector with a reference value of the reference value setter; and a comparator that applies a scanning signal to the beam scanning coil; and a CPU that maps the output from the wave height discriminator to a graphic display based on the output from the wave height discriminator, and the CPU is configured to detect that the output value of the backscattered electron detector is lower than the reference value of the reference value setter. When a signal indicating that the output of the backscattered electron detector is less than or equal to the reference value is outputted without starting the timer of the counter and a signal is output to deflect the beam to the beam scanning coil, the output of the backscattered electron detector is determined to be less than or equal to the reference value. A high-speed X-ray mapping device characterized by having a display different from that shown in FIG.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56110400A JPS5811842A (en) | 1981-07-14 | 1981-07-14 | High-speed x-ray mapping device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56110400A JPS5811842A (en) | 1981-07-14 | 1981-07-14 | High-speed x-ray mapping device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5811842A JPS5811842A (en) | 1983-01-22 |
| JPH0332736B2 true JPH0332736B2 (en) | 1991-05-14 |
Family
ID=14534838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56110400A Granted JPS5811842A (en) | 1981-07-14 | 1981-07-14 | High-speed x-ray mapping device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5811842A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2605005A1 (en) * | 2011-12-14 | 2013-06-19 | FEI Company | Clustering of multi-modal data |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5192182A (en) * | 1975-02-10 | 1976-08-12 |
-
1981
- 1981-07-14 JP JP56110400A patent/JPS5811842A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5811842A (en) | 1983-01-22 |
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