Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0332779B2 - - Google Patents
[go: Go Back, main page]

JPH0332779B2 - - Google Patents

Info

Publication number
JPH0332779B2
JPH0332779B2 JP15745483A JP15745483A JPH0332779B2 JP H0332779 B2 JPH0332779 B2 JP H0332779B2 JP 15745483 A JP15745483 A JP 15745483A JP 15745483 A JP15745483 A JP 15745483A JP H0332779 B2 JPH0332779 B2 JP H0332779B2
Authority
JP
Japan
Prior art keywords
formula
polymer
general formula
groups
tetrafluoroborate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15745483A
Other languages
Japanese (ja)
Other versions
JPS6049334A (en
Inventor
Shoji Watanabe
Shohei Kosakai
Masao Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP15745483A priority Critical patent/JPS6049334A/en
Publication of JPS6049334A publication Critical patent/JPS6049334A/en
Publication of JPH0332779B2 publication Critical patent/JPH0332779B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は感光性ジアリールヨードニウム塩とア
ルケニルオキシアルキルオキシ基を構成単位に含
む重合体からなることを特徴とする感光性組成物
に関するものである。 二重結合中に高い電子密度を有するビニル単量
体、オキシラン環化合物、環状エーテル、環状ス
ルフイド、環状アミン、環状ケイ素化合物と放射
エネルギーに暴露されるとルイス酸触媒を遊離す
ることによつて前記有機物質の重合を誘起し得る
有効量の光感受性芳香族オニウム塩の両成分から
なる組成物は、特開昭50−151976号公報、特公昭
52−14278号公報、特公昭52−14279号公報、特公
昭53−25686号公報などに開示され公知である。
また感光性芳香族ジアゾニウム塩とエポキシ樹脂
等からなる感光性組成物等も公知である。しかし
ながらジアゾニウムを使用したものは迅速に硬化
する組成物を与えるが、暗黒中下の貯蔵に際して
も、硬化、ゲル化が起り得る。またさらに、ジア
ゾニウム塩は一般に熱的に不安定であつて、組成
物より形成された塗膜等の加熱は好ましくない。
したがつて実用に際して制限が伴う。またジアリ
ールヨードニウム塩は、芳香族ジアゾニウム塩か
らなる組成物に伴うそのような欠点を有しない
が、ジアゾニウム塩のような速い硬化を与えな
い。また最近注目を浴びている感光性樹脂のプロ
セス技術である、いわゆるドライエツチングに対
しても上記の感光性組成物は耐ドライエツチング
性に乏しい。 本発明者らはこれら先行技術を改良すべく、鋭
意研究し、本発明をなすに至つた。 すなわち、本発明は、同一分子中に少なくとも 一般式(A) 一般式(B)
The present invention relates to a photosensitive composition comprising a photosensitive diaryliodonium salt and a polymer containing an alkenyloxyalkyloxy group as a constituent unit. vinyl monomers, oxirane ring compounds, cyclic ethers, cyclic sulfides, cyclic amines, cyclic silicon compounds with high electron density in the double bond and by liberating Lewis acid catalysts when exposed to radiant energy. A composition comprising both components of a photosensitive aromatic onium salt in an effective amount capable of inducing polymerization of an organic substance is disclosed in JP-A-50-151976 and JP-A-Sho.
It is disclosed in Japanese Patent Publication No. 52-14278, Japanese Patent Publication No. 52-14279, Japanese Patent Publication No. 53-25686, and is publicly known.
Also known are photosensitive compositions comprising a photosensitive aromatic diazonium salt, an epoxy resin, and the like. However, although the use of diazonium provides compositions that harden quickly, hardening and gelation can occur even when stored in the dark. Furthermore, diazonium salts are generally thermally unstable, and it is not preferable to heat a coating film formed from the composition.
Therefore, there are limitations in practical use. Diaryliodonium salts also do not have the disadvantages associated with compositions made of aromatic diazonium salts, but do not provide as fast a cure as diazonium salts. Furthermore, the above-mentioned photosensitive compositions have poor dry etching resistance against so-called dry etching, which is a photosensitive resin processing technology that has recently attracted attention. The present inventors conducted extensive research in order to improve these prior art techniques, and came up with the present invention. That is, the present invention provides at least general formula (A) and general formula (B) in the same molecule.

【式】および[expression] and

【式】 (式中のR1は2価の有機基を示す) で表わされるくり返し単位で連結された分子構造
を有する重合体と有効量の 一般式 (式中のR2、R3は水素原子、アルキル基、ニ
トロ基、アルコキシ基、Mはホウ素原子、リン、
ヒ素、アンチモンを示し、Xはハロゲン原子を示
す) で表わされるジアリールヨードニウム塩とからな
ることを特徴とする感光性組成物を提供するもの
である。 本発明において基幹成分として用いられる前記
一般式(A)で表わされる高分子化合物はフエノール
性水酸基を有するものでありかぎりいかなるもの
でもよい。その例としては2,3あるいは4−ヒ
ドロキシスチレン、4−ヒドロキシ−3−ニトロ
スチレンの単独重合体やこの単量体とアクリロニ
トリル、スチレン、α−メチルスチレン、酢酸ビ
ニル、アクリル酸アルキルエステル、メタクリル
酸アルキルエステル、無水マレイン酸のような線
状重合性単量体との共重合体をあげることができ
る。これら水酸基を有する高分子化合物の分子量
は2000〜200000程度のものが望ましい。一般式(B)
で表わされる単位は一般式(A)で表わされる重合体
に 一般式 XR2OCH=CH2 (Xはハロゲン原子、R2は2価の有機基を示す) で表わされるハロアルキルビニルエーテルを要す
れば縮合剤を存在させて反応することにより得ら
れる。また感光性ジアリールヨードニウム塩とし
ては、Macromolecules Vol.10,No.6,pp.1307
〜1315(1977)に記載されている化合物、テトラ
フルオロホウ酸ジフエニルヨードニウム、テトラ
フルオロホウ酸4−メトキシジフエニルヨードニ
ウム、テトラフルオロホウ酸4,4′−ジメチルジ
フエニルヨードニウム、テトラフルオロホウ酸
4,4′−イソプロピルジフエニルヨードニウム、
テトラフルオロホウ酸4,4′−t−ブチルジフエ
ニルヨードニウム、テトラフルオロホウ酸4,
4′−ジクロロジフエニルヨードニウム、テトラフ
ルオロホウ酸3,3′−ジニトロジフエニルヨード
ニウム等の一般式 (式中のR3、R4は水素原子、アルキル基、ニ
トロ基、アルコキシ基、Mはホウ素原子、リン、
ヒ素、アンチモンを示し、xはハロゲン原子を示
す) で表わされるジアリールヨードニウム塩をあげる
ことができる。 本発明の感光性組成物を製造するには、前記の
同一分子中に少なくとも一般式(A)及び一般式(B)で
表わされるくり返し単位で連結された分子構造を
有する重合体に有効量のジアリールヨードニウム
塩とを有機溶剤に溶かし混合すればよい。それら
の有機溶剤としては前記の重合体、ジアリールヨ
ードニウム塩を溶かすものであればよい。その例
としてはN,N−ジメチルホルムアミド、N,N
−ジメチルアセトアミド、ジオキサン、メチルセ
ロソルブ、エチルセロソルブ、メチルセロソルブ
アセテート、エチルセロソルブアセテート、イソ
ブチルケトン等があげられる。重合体の含有量
は、用途に応じ、必要な粘度になるよう選択され
る。また重合体に対するジアリールヨードニウム
塩の割合は広範囲に変えられるが、重合体の重量
に対して1〜20%のジアリールヨードニウム塩を
使用した場合、有効な結果が達成される。しかし
ながら、これらの量は前記の重合体の性質、活性
光の強度などにより、上記範囲以外を選択しても
よい。こうして得られた組成物は、常用の方法に
よつて、金属、ゴム、プラスチツク、紙、木材、
ガラス等の基体に塗布することができ、塗布され
たものに活性光を照射することにより、数秒ない
し数分で架橋硬化させることができる。 本発明の感光性組成物の利用分野としては製版
材料、光硬化性塗料、光硬化性印刷インキ、プリ
ント回路等のケミカルミリング用レジスト膜およ
び半導体や集積回路の微細加工用フオトレジスト
などへの応用が可能である。特に本発明の感光性
組成物の構成成分であるジアリールヨードニウム
塩は、紫外線吸収スペクトルにおいて200〜
300nmの領域に強い吸収を示すことから遠紫外線
微細加工用フオトレジストとして極めて有望であ
る。 次に参考例、実施例により本発明をさらに詳細
に説明する。 参考例 1 窒素導入した反応容器に、ヘキサンで洗浄した
50%水素ナトリウム4.8g(0.1モル)、乾燥したN,
N−ジメチルアセトアミド20gを仕込み、この溶
液にポリ−4−ビニルフエノール(重量平均分子
量21000)12gを乾燥したN,N−ジメチルアセ
トアミド70gに溶かした溶液を撹拌しながら加
え、約2時間撹拌を続けた。次いでこれに2−ク
ロロエチルビニルエーテル30g、無水炭酸ナトリ
ウム1.5g、トリエチルベンジルアンモニウムクロ
ライド0.05gを加え、80℃にて24時間反応させた
後、反応混合物を80℃で減圧蒸留することによ
り、大部分のN,N−ジメチルアセトアミド、未
反応の2−クロロエチルビニルエーテルを除去
し、残留物にジエチルエーテルを加え溶解させ
た。この溶液を飽和炭酸水素ナトリウム水溶液で
数回洗い、無水硫酸ナトリウムで乾燥した後、減
圧蒸留することにより液状成分を留去する。再び
残留物を少量の塩化メチレンを含むジエチルエー
テルに溶かし、撹拌しながら多量のヘキサンに注
加する。このようにしてビニロキシエチルエーテ
ル化されたポリマーを得た。 赤外線吸収スペクトルからビニル基に基づく吸
収を確認した。プロトン核磁気共鳴吸収スペクト
ルによりδ=4.08,4.22および6.45に二重結合に
基づく吸収を確認した。また赤外線吸収スペクト
ルおよび紫外線吸収スペクトルからフエノール性
水酸基が存在することを確認した。このことから
得られたポリマーはフエノール性水酸基およびビ
ニロキシアルキル基からなるくり返し単位で連結
された分子構造を有する重合体であることが確認
された。 参考例 2 参考例1と同様に出発物質として重量平均分子
量3450のポリ−4−ビニルフエノールを用いて、
ビニロキシエチルエーテル化されたポリマーを得
た。 参考例1と同様の方法により得られたポリマーは
フエノール性水酸基およびビニロキシアルキル基
からなるくり返し単位で連結された分子構造を有
する重合体であることが確認された。 実施例 1 重量平均分子量21000のポリ−4−ビニルフエ
ノールから参考例1の方法によつて得られたポリ
−4−ビニルフエニルビニロキシエチルエーテル
15g、テトラフルオロホウ酸ジフエニルヨードニ
ウム1.5gをN,N−ジメチルホルムアミド85gに
溶解し、感光性組成物を調整した。これをガラス
板上に約10μmの厚さに塗布し、2KWのキセノン
ランプより分光した230nmの光を照射し、メチル
イソブチルケトン−ブタノール(50/50体積比)
混合溶液で現像し、残膜率を測定したところ
20mJ/cm2の露光で90%以上の残膜が得られた。
また石英製ネガを介して露光し、未露光部を溶剤
で除去すると明瞭なパターンが得られ、最小線幅
は2μm以下であつた。 実施例 2 実施例1の組成物のテトラフルオロホウ酸ジフ
エニルヨードニウム塩の代りにヘキサフルオロリ
ン酸ジフエニルヨードニウムを用いて実施例1と
同様の処理を行つた。lOmJ/cm2の露光量で残膜
率は90%以上であつた。またマスクを介して露光
したものは明瞭なパターンを示した。 実施例 3 実施例1の組成物のテトラフルオロホウ酸ジフ
エニルヨードニウムの代りに、テトラフルオロホ
ウ酸4,4′−t−ブチルジフエニルヨードニウム
を用いて実施例1と同様の処理を行つたところ、
20mJ/cm2の露光量で90%以上の残膜収率を示し
た。 実施例 4 参考例2で得た重合体14gとヘキサフルオロホ
ウ酸ジフエニルヨードニウム1gを70mlのN,N
−ジメチルアセトアミドに溶解させ、実施例1と
同様の手続により露光を行つた。90%以上の残膜
率を得るには25mJ/cm2の露光で充分であつた。
またネガを介して露光し、未露光を除去すること
により明瞭な陰画像が得られた。
[Formula] (R 1 in the formula represents a divalent organic group) A polymer having a molecular structure connected by repeating units represented by the formula and an effective amount of the general formula (R 2 and R 3 in the formula are hydrogen atoms, alkyl groups, nitro groups, alkoxy groups, M is boron atoms, phosphorus,
The present invention provides a photosensitive composition comprising a diaryliodonium salt represented by: arsenic or antimony, and X represents a halogen atom. The polymer compound represented by the general formula (A) used as a core component in the present invention may be of any type as long as it has a phenolic hydroxyl group. Examples include homopolymers of 2,3 or 4-hydroxystyrene, 4-hydroxy-3-nitrostyrene, and combinations of these monomers with acrylonitrile, styrene, α-methylstyrene, vinyl acetate, alkyl acrylates, and methacrylic acid. Examples include copolymers with linear polymerizable monomers such as alkyl esters and maleic anhydride. The molecular weight of these hydroxyl group-containing polymer compounds is preferably about 2,000 to 200,000. General formula (B)
The unit represented by the formula (A) is obtained by adding a haloalkyl vinyl ether represented by the general formula XR 2 OCH=CH 2 (X is a halogen atom, R 2 is a divalent organic group) to the polymer represented by the general formula (A). It is obtained by reacting in the presence of a condensing agent. In addition, as a photosensitive diaryliodonium salt, Macromolecules Vol.10, No.6, pp.1307
~1315 (1977), diphenyliodonium tetrafluoroborate, 4-methoxydiphenyliodonium tetrafluoroborate, 4,4'-dimethyldiphenyliodonium tetrafluoroborate, 4 tetrafluoroborate , 4′-isopropyldiphenyliodonium,
4,4'-t-butyldiphenyliodonium tetrafluoroborate, 4,4'-t-butyldiphenyl iodonium tetrafluoroborate,
General formula of 4'-dichlorodiphenyliodonium, 3,3'-dinitrodiphenyliodonium tetrafluoroborate, etc. (R 3 and R 4 in the formula are hydrogen atoms, alkyl groups, nitro groups, alkoxy groups, M is boron atoms, phosphorus,
arsenic, antimony, and x represents a halogen atom). In order to produce the photosensitive composition of the present invention, an effective amount of the polymer having a molecular structure connected by at least repeating units represented by general formula (A) and general formula (B) in the same molecule is added. Diaryliodonium salt may be dissolved in an organic solvent and mixed. Any organic solvent may be used as long as it dissolves the above-mentioned polymer and diaryliodonium salt. Examples include N,N-dimethylformamide, N,N
-Dimethylacetamide, dioxane, methyl cellosolve, ethyl cellosolve, methyl cellosolve acetate, ethyl cellosolve acetate, isobutyl ketone and the like. The content of the polymer is selected depending on the application so as to provide the required viscosity. The proportion of diaryliodonium salt to the polymer can also be varied within a wide range, but effective results are achieved when using 1 to 20% diaryliodonium salt, based on the weight of the polymer. However, these amounts may be selected outside the above range depending on the properties of the polymer, the intensity of actinic light, etc. The composition thus obtained can be applied to metals, rubber, plastics, paper, wood, etc. by conventional methods.
It can be applied to a substrate such as glass, and by irradiating the applied material with actinic light, it can be crosslinked and cured in several seconds to several minutes. Application fields of the photosensitive composition of the present invention include plate-making materials, photocurable paints, photocurable printing inks, resist films for chemical milling of printed circuits, etc., and photoresists for microfabrication of semiconductors and integrated circuits. is possible. In particular, the diaryliodonium salt that is a component of the photosensitive composition of the present invention has an ultraviolet absorption spectrum of 200 to
Since it exhibits strong absorption in the 300 nm region, it is extremely promising as a photoresist for deep ultraviolet microfabrication. Next, the present invention will be explained in more detail with reference to Reference Examples and Examples. Reference example 1 A reaction vessel into which nitrogen was introduced was washed with hexane.
4.8 g (0.1 mol) 50% sodium hydrogen, dry N,
20 g of N-dimethylacetamide was charged, and a solution of 12 g of poly-4-vinylphenol (weight average molecular weight 21,000) dissolved in 70 g of dry N,N-dimethylacetamide was added to this solution while stirring, and stirring was continued for about 2 hours. Ta. Next, 30 g of 2-chloroethyl vinyl ether, 1.5 g of anhydrous sodium carbonate, and 0.05 g of triethylbenzylammonium chloride were added to this, and after reacting at 80°C for 24 hours, most of the reaction mixture was distilled under reduced pressure at 80°C. N,N-dimethylacetamide and unreacted 2-chloroethyl vinyl ether were removed, and diethyl ether was added to the residue to dissolve it. This solution is washed several times with a saturated aqueous sodium bicarbonate solution, dried over anhydrous sodium sulfate, and then distilled under reduced pressure to remove liquid components. The residue is again dissolved in diethyl ether containing a small amount of methylene chloride and poured into a large amount of hexane with stirring. In this way, a vinyloxyethyl etherified polymer was obtained. Absorption based on vinyl groups was confirmed from the infrared absorption spectrum. Absorption based on double bonds was confirmed at δ = 4.08, 4.22, and 6.45 using proton nuclear magnetic resonance absorption spectroscopy. The presence of phenolic hydroxyl groups was also confirmed from infrared absorption spectra and ultraviolet absorption spectra. This confirmed that the obtained polymer had a molecular structure connected by repeating units consisting of phenolic hydroxyl groups and vinyloxyalkyl groups. Reference Example 2 Similar to Reference Example 1, using poly-4-vinylphenol with a weight average molecular weight of 3450 as a starting material,
A vinyloxyethyl etherified polymer was obtained. It was confirmed that the polymer obtained by the same method as in Reference Example 1 had a molecular structure connected by repeating units consisting of phenolic hydroxyl groups and vinyloxyalkyl groups. Example 1 Poly-4-vinylphenyl vinyloxyethyl ether obtained from poly-4-vinylphenol having a weight average molecular weight of 21,000 by the method of Reference Example 1.
A photosensitive composition was prepared by dissolving 15 g of diphenyliodonium tetrafluoroborate and 1.5 g of diphenyliodonium tetrafluoroborate in 85 g of N,N-dimethylformamide. This was applied to a thickness of approximately 10μm on a glass plate, and 230nm light separated from a 2KW xenon lamp was irradiated, and methyl isobutyl ketone-butanol (50/50 volume ratio)
Developed with mixed solution and measured residual film rate
More than 90% of the remaining film was obtained by exposure at 20 mJ/cm 2 .
Furthermore, when exposed through a quartz negative and removing the unexposed areas with a solvent, a clear pattern was obtained, with a minimum line width of 2 μm or less. Example 2 The same treatment as in Example 1 was carried out using diphenyliodonium hexafluorophosphate in place of the diphenyliodonium tetrafluoroborate salt in the composition of Example 1. The residual film rate was 90% or more at an exposure dose of lOmJ/cm 2 . Also, those exposed through a mask showed a clear pattern. Example 3 The same treatment as in Example 1 was carried out using 4,4'-t-butyldiphenyliodonium tetrafluoroborate instead of diphenyliodonium tetrafluoroborate in the composition of Example 1. ,
A residual film yield of 90% or more was shown at an exposure dose of 20 mJ/cm 2 . Example 4 14 g of the polymer obtained in Reference Example 2 and 1 g of diphenyliodonium hexafluoroborate were mixed with 70 ml of N,N
- It was dissolved in dimethylacetamide and exposed using the same procedure as in Example 1. Exposure of 25 mJ/cm 2 was sufficient to obtain a residual film rate of 90% or more.
In addition, a clear negative image was obtained by exposing through the negative and removing the unexposed portion.

Claims (1)

【特許請求の範囲】 1 同一分子中に少なくとも 一般式(A) 一般式(B) 【式】および【式】 (式中のR1は2価の有機基を示す) で表わされるくり返し単位で連結された分子構造
を有する重合体と有効量の 一般式 (式中のR2、R3は水素原子、アルキル基、ニ
トロ基、アルコキシ基、Mはホウ素原子、リン、
ヒ素、アンチモンを示し、Xはハロゲン原子を示
す) で表わされるジアリールヨードニウム塩とからな
ることを特徴とする感光性組成物。
[Claims] 1 At least repeating units in the same molecule represented by general formula (A) general formula (B) [formula] and [formula] (R 1 in the formula represents a divalent organic group) Polymer with linked molecular structure and effective amount of general formula (R 2 and R 3 in the formula are hydrogen atoms, alkyl groups, nitro groups, alkoxy groups, M is boron atoms, phosphorus,
arsenic or antimony, and X represents a halogen atom) A photosensitive composition comprising a diaryliodonium salt represented by:
JP15745483A 1983-08-29 1983-08-29 Photosensitive composition Granted JPS6049334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15745483A JPS6049334A (en) 1983-08-29 1983-08-29 Photosensitive composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15745483A JPS6049334A (en) 1983-08-29 1983-08-29 Photosensitive composition

Publications (2)

Publication Number Publication Date
JPS6049334A JPS6049334A (en) 1985-03-18
JPH0332779B2 true JPH0332779B2 (en) 1991-05-14

Family

ID=15650007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15745483A Granted JPS6049334A (en) 1983-08-29 1983-08-29 Photosensitive composition

Country Status (1)

Country Link
JP (1) JPS6049334A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04330445A (en) * 1991-02-08 1992-11-18 Fuji Photo Film Co Ltd Photopolymerizable composition
JPH075687A (en) * 1993-06-18 1995-01-10 Mitsui Toatsu Chem Inc Liquid etching resist and copper-clad laminate with etching resist coating

Also Published As

Publication number Publication date
JPS6049334A (en) 1985-03-18

Similar Documents

Publication Publication Date Title
US5310619A (en) Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
KR101070032B1 (en) Photoacid generators with perfluorinated polyfunctional anions
KR101855112B1 (en) Photoacid generators and photoresists comprising same
JP3418946B2 (en) Photoreactive composition, acid-reactive polymer composition containing the photoreactive composition, and acid-reactive resin layer
JP2001226430A (en) Re-dissolvable acid crosslinkable polymer and photosensitive resin composition in which the polymer and a photoacid generator are combined
JP2004294638A (en) Negative resist material and method for forming resist pattern
JPH05249683A (en) Radiation-sensitive composition
JP2583364B2 (en) Photosensitive resin composition
JP3300089B2 (en) Positive radiation-sensitive mixture
JPH01106038A (en) Positive radiosensitive mixture and positive recording material and manufacture thereof
US5362607A (en) Method for making a patterned resist substrate composite
JPH0728247A (en) Radiation sensitive mixture and manufacture of relief structure using mixture thereof
JP2000239436A (en) Photoresist crosslinking monomer, photoresist crosslinking agent, photoresist composition, photoresist pattern formation, and semiconductor element
JP2812927B2 (en) Acetal-containing alkoxy-styrene polymer, method for producing the same, and chemically amplified photoresist material containing alkoxy-styrene polymer as a main component
JPH10115928A (en) Resin for manufacturing positive photoresist, and chemically sensitized positive photoresist composition containing the same
JPH08262702A (en) Wet chemical developable, etch stable photoresist for UV radiation with wavelengths less than 200 nm
US5286602A (en) Acid-cleavable compounds, positive-working radiation-sensitive mixture containing these compounds, and radiation-sensitive recording material produced with this mixture
JPH0212153A (en) Positive type radiation sensitive mixture based on acid decomposable compound that forms ac photochemically and manufacture of relief pattern and relief image
JPH1115159A (en) Negative photoresist material and pattern forming method by using same
JPH03282550A (en) Photoresist composition
JPS6260418B2 (en)
JPH0332779B2 (en)
Brunsvold et al. Sensitivity enhancers for chemically amplified resists
JP2825543B2 (en) Negative radiation sensitive resin composition
JP2998095B2 (en) Resist coating composition solution