JPH0333224B2 - - Google Patents
Info
- Publication number
- JPH0333224B2 JPH0333224B2 JP58178214A JP17821483A JPH0333224B2 JP H0333224 B2 JPH0333224 B2 JP H0333224B2 JP 58178214 A JP58178214 A JP 58178214A JP 17821483 A JP17821483 A JP 17821483A JP H0333224 B2 JPH0333224 B2 JP H0333224B2
- Authority
- JP
- Japan
- Prior art keywords
- heater wire
- heating
- transistor
- gas
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/007—Arrangements to check the analyser
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/122—Circuits particularly adapted therefor, e.g. linearising circuits
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Combustion & Propulsion (AREA)
- Food Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Emergency Alarm Devices (AREA)
Description
【発明の詳細な説明】
本発明はガス漏れ検知装置に係り、特にヒータ
線の加熱のためにパルス電源を使うとともに少く
ともヒータ線に電圧を印加している期間において
ヒータ線の断線を検出可能とするものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a gas leak detection device, which uses a pulse power source to heat the heater wire, and is capable of detecting disconnection of the heater wire at least during the period when voltage is applied to the heater wire. That is.
従来からCO、メタン、LPG、水素並びにその
他の可燃性ガスを感知する物質としてWO3、
SnO、ZnO等の還元型半導体とCoO、NiO、
Cu2O等の酸化型半導体と称する(以下これ等を
金属酸化物半導体と総称する)ものが知られてお
り、ガスを吸着したときに生ずるこれ等金属酸化
物半導体の導電度或は抵抗値の変化による電気変
化を利用して下記の構成のようにガス検知素子を
単体として作成し警報装置と組合せガス漏れ警報
装置に用いられている。このガス検知素子として
は通常第1図に示すようにヒータ線1aを磁器製
管1b内を貫通せしめて、更にこの磁器製管1b
の外側面に金属酸化物半導体層或は抵抗体層1c
を設けてその上に電極1d1,1d2を間隔をおいて
対峙せしめた所謂傍熱型素子と第2図に略線図で
示すようにヒータ線が1対の電極の一方1d3を兼
ねた直熱型素子とが用いられている。又ガス検知
素子1としては第1図の場合の変形としてヒータ
線1aを磁器製管1b内を通すことなく半導体層
又は抵抗体層1cの外側に設けることもできる。
尚これ等ガス検知素子にヒータ線を使用するの
は、通常前述の半導体を100℃〜400℃の高温度に
加熱するとガスイオンの吸着反応が促進されるの
で微量のガスを感知できるようにガスの検出感度
をあげるためであるが、なかには通常はヒータ線
を加熱せず低い温度状態でガスを吸着せしめるこ
とにより、その導電度が変ることを利用する場合
もあり、この場合はこの吸着ガスを素子から脱着
するためにヒータ線を用いるのであるが、本発明
装置は後者のヒータ線を間欠的に加熱するタイプ
に関するものである。 WO 3 has traditionally been used as a substance that senses CO, methane, LPG, hydrogen, and other flammable gases.
Reduced semiconductors such as SnO, ZnO, CoO, NiO,
Oxidized semiconductors such as Cu 2 O (hereinafter collectively referred to as metal oxide semiconductors) are known, and the conductivity or resistance value of these metal oxide semiconductors that occurs when gas is adsorbed is known. Using electrical changes caused by changes in gas, a gas detection element as shown below is fabricated as a single unit and used in a gas leak alarm system in combination with an alarm device. As shown in FIG. 1, this gas detection element is usually made by passing a heater wire 1a through the inside of the porcelain tube 1b, and then
metal oxide semiconductor layer or resistor layer 1c on the outer surface of
A so-called indirectly heated element is provided on which electrodes 1d 1 and 1d 2 are placed facing each other at an interval, and a heater wire also serves as one of the pair of electrodes 1d 3 as shown schematically in FIG. 2. A directly heated element is used. Furthermore, as a modification of the case shown in FIG. 1, the gas detection element 1 may be provided outside the semiconductor layer or resistor layer 1c without passing the heater wire 1a through the ceramic tube 1b.
The reason why heater wires are used in these gas detection elements is that heating the aforementioned semiconductor to a high temperature of 100°C to 400°C accelerates the adsorption reaction of gas ions. This is to increase the detection sensitivity of the gas, but in some cases, the conductivity changes by adsorbing the gas at a low temperature without heating the heater wire. A heater wire is used to attach and detach from the element, and the present invention relates to the latter type in which the heater wire is intermittently heated.
このようなガス検知素子を用いたガス漏れ警報
装置では常に正常な動作態勢を必要とするが、し
ばしば断線事故が起るためガス検知素子を加熱す
るヒータ線に流れる電流を監視して断線を検出し
たり金属酸化物半導体に傷がついたり電極の接触
不良等のガス検知素子の破損に起因するガス検知
素子の出力の有無を監視して断線を検出したりす
ることが提案されているが、電極の断線とガス検
知素子の破損の検出を同時に検出表示することは
考えられなかつた。しかもガス検知素子は比較的
寿命が短いため常にガス検知素子の動作には監視
が必要であり、ガス検知素子の故障によるガス漏
れ時の不作動の事故による危険を防止することは
重要である。 Gas leak alarm systems using such gas detection elements require normal operation at all times, but disconnections often occur, so disconnections are detected by monitoring the current flowing through the heater wire that heats the gas detection element. It has been proposed to detect disconnection by monitoring the presence or absence of output from the gas sensing element due to damage to the gas sensing element, such as damage to the metal oxide semiconductor or poor electrode contact. It was unthinkable to detect and display the detection and display of electrode disconnection and gas detection element damage at the same time. Moreover, since the gas detection element has a relatively short lifespan, the operation of the gas detection element must be constantly monitored, and it is important to prevent the danger of non-operation in the event of a gas leak due to failure of the gas detection element.
このような点を考慮して本発明ではガス検知素
子のヒータ線の断線と半導体の損傷切断或は半導
体と両電極との接触不良等による素子の破損事故
をも同時に検出表示することができるガス漏れ警
報装置を提供するものである。 Taking these points into consideration, the present invention has developed a gas detection element that can simultaneously detect and display element damage caused by disconnection of the heater wire of the gas detection element, damage to the semiconductor, or poor contact between the semiconductor and both electrodes. A leak alarm device is provided.
更に本発明ではヒータ線の加熱電源としてパル
ス発生器よりのパルスを用いたもので、これによ
り検知素子を高温状態と低温状態つまり交互にヒ
ータ線の加熱と加熱停止とをガス検知素子の特性
であるガス検生期間とガス排出期間にあわせて円
滑に行うものであり、又、少くともヒータ線を加
熱している期間にヒータ線に流れる電流を利用し
てある抵抗に降下電圧を発生せしめて、第1のト
ランジスタに与えることによりヒータ線の断線を
確実に検出するようにしたものである。このため
にはある場合にはヒータ線を加熱していない期間
には前述のパルスジエネレータの出力によりヒー
タ線の断線検出を禁止するようにしたものであ
る。又ある場合にはヒータ線を加熱していない期
間にも積極的に第2のトランジスタを介してヒー
タ線の断線を検出しうるようにしたものである。 Furthermore, in the present invention, a pulse from a pulse generator is used as a heating power source for the heater wire, and this causes the sensing element to be in a high temperature state and a low temperature state, that is, to alternately heat and stop heating the heater wire, depending on the characteristics of the gas sensing element. It is carried out smoothly in accordance with a certain gas inspection period and gas discharge period, and at least during the heating period of the heater wire, a voltage drop is generated in a certain resistance using the current flowing through the heater wire. , to the first transistor to reliably detect a break in the heater wire. For this purpose, in some cases, the detection of disconnection of the heater wire is prohibited by the output of the pulse generator mentioned above during the period when the heater wire is not heated. Furthermore, in some cases, disconnection of the heater wire can be actively detected via the second transistor even during a period when the heater wire is not being heated.
次に図面により本発明の実施例装置について説
明する。第3図はヒータ線を加熱しない期間にパ
ルスジエネレータの出力によりヒータ線の断線検
出を禁止する場合を示した回路構成図、第4図は
第3図にもとづいてパルスジエネレータPGの波
形に応じて働くヒータ線1a、インバータINV、
抵抗R2、トランジスタQ2、比較器COM2、トラ
ンジスタQ3の夫々応動線図である。 Next, an embodiment of the present invention will be explained with reference to the drawings. Figure 3 is a circuit configuration diagram showing a case in which disconnection detection of the heater wire is prohibited by the output of the pulse generator during the period when the heater wire is not heated. Figure 4 shows the waveform of the pulse generator PG based on Figure 3. Heater wire 1a, inverter INV,
FIG. 3 is a response diagram of a resistor R 2 , a transistor Q 2 , a comparator COM 2 , and a transistor Q 3 .
図でPGはパルスジエネレータ、1は第1図で
示すガス検知素子であり、ヒータ線1aと半導体
1c(正確には電極1d1,1d2間に接続される半
導体の導電度或は抵抗値)とを監視のための回路
接続に含んでいる。パルスジエネレータPGに接
続するヒータ線1aの一端はインバータINVよ
り抵抗R1、ダイオードD1をへてトランジスタQ2
のベースに接続される。又ヒータ線1aの他端側
は抵抗R2をへて接地されるとともに抵抗R3をへ
てトランジスタQ2のベースに接続される。又ガ
ス検知素子1の半導体1cの一端は電極を介して
抵抗R4をへて接地されるとともに比較器COM1の
+側入力端子と比較器COM2の−側入力端子に接
続され、半導体1cの他端側は他方の電極を介し
て+電源端子B1に接続される。又+電源端子B1
は抵抗R5,R6をへて接地され、抵抗R5とR6の接
続部分が比較器COM1の一側入力端子に接続さ
れ、比較器COM1の出力側は抵抗R7,R8をへて
接地され、抵抗R7とR8の接続部がトランジスタ
又はサイリスタのようなゲート極付半導体Q1の
ゲート端子に接続される。トランジスタQ1のア
ノードは警報表示灯LED1より抵抗R9をへて警報
信号端子B2に接続され、トランジスタQ1のカソ
ードは接地される。又+電源端子B1より抵抗
R10,R11をへてトランジスタQ2のコレクタに接
続され、トランジスタQ2のエミツタは接地され、
抵抗R10とR11の接続部は比較器COM2の+側入力
端子に接続され、比較器COM2の出力側は抵抗
R12とR13をへて接地され、抵抗R12とR13の接続
部はトランジスタ又はサイリスタのようなゲート
極付半導体Q3のゲート端子に接続され、トラン
ジスタQ3のカソードは接地され、トランジスタ
Q3のアノード側は故障表示灯LED2より抵抗R14
をへて故障信号端子B3に接続される。尚、本実
施例では、抵抗R2が第1の電流検出手段を、ト
ランジスタQ2と比較器COM2がヒータ断線判別手
段を、インバータ回路INVとダイオードDが禁
止手段を、抵抗R4が第2の電流検出手段を、抵
抗R10,R11と比較器COM2がヒータ断線判別手段
を、それぞれ構成している。ところで、第3図に
図示しない受信機につないで外部に警報信号と故
障信号を送出するタイプを示したが、家庭で使わ
れるガス漏れ検知機としても勿論適用可能であ
る。 In the figure, PG is a pulse generator, 1 is the gas detection element shown in Figure 1, and the conductivity or resistance value of the heater wire 1a and the semiconductor 1c (to be exact, the semiconductor connected between the electrodes 1d 1 and 1d 2) . ) and circuit connections for monitoring. One end of the heater wire 1a connected to the pulse generator PG is connected to the inverter INV through the resistor R 1 and the diode D 1 to the transistor Q 2
connected to the base of The other end of the heater wire 1a is grounded through a resistor R2 and connected to the base of a transistor Q2 through a resistor R3 . Further, one end of the semiconductor 1c of the gas detection element 1 is grounded through an electrode and a resistor R4 , and is also connected to the + side input terminal of the comparator COM 1 and the - side input terminal of the comparator COM 2 . The other end side is connected to the + power supply terminal B1 via the other electrode. Also + power supply terminal B 1
is grounded through resistors R 5 and R 6 , the connecting part of resistors R 5 and R 6 is connected to one side input terminal of comparator COM 1 , and the output side of comparator COM 1 is connected to resistors R 7 and R 8 The connecting portion of resistors R 7 and R 8 is connected to the gate terminal of a gate-polarized semiconductor Q 1 such as a transistor or a thyristor. The anode of the transistor Q 1 is connected to the alarm signal terminal B 2 from the alarm indicator light LED 1 through the resistor R 9 , and the cathode of the transistor Q 1 is grounded. Also, resistor from + power supply terminal B 1
It is connected to the collector of transistor Q 2 through R 10 and R 11 , and the emitter of transistor Q 2 is grounded.
The connection between resistors R 10 and R 11 is connected to the + side input terminal of comparator COM 2 , and the output side of comparator COM 2 is connected to the resistor
It is grounded through R 12 and R 13 , and the junction between resistors R 12 and R 13 is connected to the gate terminal of a gate-polarized semiconductor Q 3 such as a transistor or a thyristor. The cathode of the transistor Q 3 is grounded, and the
The anode side of Q 3 is connected to the resistance R 14 from the fault indicator LED 2 .
and is connected to the fault signal terminal B3 . In this embodiment, the resistor R 2 serves as the first current detection means, the transistor Q 2 and the comparator COM 2 serve as the heater burnout determination means, the inverter circuit INV and the diode D serve as the inhibiting means, and the resistor R 4 serves as the first current detection means. The resistors R 10 and R 11 and the comparator COM 2 constitute the heater breakage determining means. By the way, although FIG. 3 shows a type that is connected to a receiver (not shown) and sends an alarm signal and a failure signal to the outside, it is of course applicable to a gas leak detector used at home.
次に第3図について第4図の波形を参照して動
作説明をする。今ガス検知素子が正常な場合、ヒ
ータ線1aにも半導体1cにも所定の電流が流れ
るので、ヒータ線にパルス電圧Vが与えられてい
る期間にはヒータ線1aを流れる電流による抵抗
R2の電圧降下がトランジスタQ2のベースに加わ
り、トランジスタQ2はオンとなり、比較器COM2
の+側入力端子には接地Eに対する+B1電源端
子よりの電源電圧を抵抗R10とR11で分割した電
圧が加わつており、比較器COM2の−側入力端子
には、半導体1cを流れる電流による抵抗R4の
電圧降下が加わつており、比較器COM2の+側入
力端子に印加する電圧が正常では予め−側入力端
子に印加する電圧より低く設定されているので比
較器COM2より出力はとりだされず、トランジス
タQ3はオフで故障表示灯LED2は点灯されない。
又ヒータ線1aに電圧が印加されていない期間に
はパルスジエネレータPGの出力をインバータ
INVで反転した電圧がダイオードD1をへてトラ
ンジスタQ2のベースに加えられ、ヒータ線1a
に電圧が印加されている場合と同じくトランジス
タQ2はオンのまゝであり前述同様比較器COM2は
出力をださず、故障表示灯LED2は点灯せず誤検
出が行われることはない。次にヒータ線1aが断
線した場合は、ヒータ線1aに流れる電流はなく
抵抗R2の電圧降下がなくなり、トランジスタQ2
はオフとなつて比較器COM2の+側入力端子には
+B電源端子よりの接地Eに対する電源電圧が直
接加わることとなつて比較器COM2の−側入力端
子に加わる電圧より高くなり、出力をとりだすの
で抵抗R12,R13にもとづくゲート電圧がトラン
ジスタQ3のゲートに与えられることとなり、ト
ランジスタQ3はオンとなつて故障表示灯LED2は
点灯し、又故障信号端子B3より故障信号をとり
だして図示しない受信機をへて外部に知らせるこ
とができる。又半導体1c側が断線或は接触不良
をもたらした場合は半導体1cに流れる電流がな
くなり、抵抗R4による電圧降下は激減し比較器
COM2の−側入力端子に加わる電圧が+側入力端
子に加わる電圧に比して減少することにより比較
器COM2より出力をとりだす結果となり、トラン
ジスタQ3にゲート電圧を与え故障表示灯LED2を
点灯し、又故障信号を外部に送出することとな
る。又ガス検知素子1に漏れたガスが吸着された
場合は半導体1cは抵抗値を減少して抵抗R4に
おける電圧降下が上昇して比較器COM1の+側入
力端子に加わる電圧が−側入力端子の電圧より上
つて比較器COM1より出力をとりだすので抵抗
R7,R8を介してトランジスタQ1のゲート端子に
電圧が加わつてトランジスタQ1をオンとし、警
報表示灯LED1を点灯するとともに端子B2より警
報信号を送出して図示しない受信機をへて外部に
知らせることができる。 Next, the operation of FIG. 3 will be explained with reference to the waveforms of FIG. 4. If the gas detection element is normal now, a predetermined current flows through both the heater wire 1a and the semiconductor 1c, so during the period when the pulse voltage V is applied to the heater wire, there is a resistance due to the current flowing through the heater wire 1a.
The voltage drop across R 2 is applied to the base of transistor Q 2 , transistor Q 2 is turned on and the comparator COM 2
A voltage obtained by dividing the power supply voltage from the +B 1 power supply terminal with respect to ground E by resistors R 10 and R 11 is applied to the + side input terminal of the comparator COM 2 , and a voltage flowing through the semiconductor 1c is applied to the - side input terminal of the comparator COM 2. A voltage drop across resistor R4 due to current is added, and the voltage applied to the + side input terminal of comparator COM 2 is normally set lower than the voltage applied to the - side input terminal . No output is taken out, transistor Q 3 is off, and fault indicator LED 2 is not lit.
Also, during the period when no voltage is applied to the heater wire 1a, the output of the pulse generator PG is
The voltage inverted at INV is applied to the base of transistor Q2 through diode D1 , and is applied to heater wire 1a.
Transistor Q 2 remains on as in the case where voltage is applied to . Next, when the heater wire 1a is disconnected, no current flows through the heater wire 1a and the voltage drop across the resistor R 2 disappears, and the transistor Q 2
is turned off, and the power supply voltage from the +B power supply terminal relative to ground E is directly applied to the + side input terminal of comparator COM 2 , which becomes higher than the voltage applied to the - side input terminal of comparator COM 2 , and the output Therefore, the gate voltage based on the resistors R 12 and R 13 is applied to the gate of transistor Q 3 , transistor Q 3 is turned on, the fault indicator LED 2 lights up, and a fault signal is sent from the fault signal terminal B 3 . The signal can be extracted and sent to the outside through a receiver (not shown). In addition, if the semiconductor 1c side is disconnected or has a poor contact, no current flows through the semiconductor 1c, and the voltage drop due to the resistor R4 is drastically reduced.
The voltage applied to the negative input terminal of COM 2 decreases compared to the voltage applied to the positive input terminal, resulting in an output from the comparator COM 2 , which applies gate voltage to the transistor Q 3 and turns on the fault indicator LED 2. will be lit and a failure signal will be sent to the outside. Also, when leaked gas is adsorbed by the gas detection element 1, the resistance value of the semiconductor 1c decreases, the voltage drop across the resistor R4 increases, and the voltage applied to the + side input terminal of the comparator COM 1 becomes the - side input. Since the voltage exceeds the terminal voltage and the output is taken from the comparator COM 1 , the resistor
A voltage is applied to the gate terminal of transistor Q 1 via R 7 and R 8 , turning on transistor Q 1 , lighting up alarm indicator LED 1 , and sending out an alarm signal from terminal B 2 to activate a receiver (not shown). You can inform the outside world.
このようにして第3図の実施例ではガス検知素
子1のヒータ線1a並びに半導体1cによる素子
の断線や破損を検出できるとともに、ヒータ線1
aの加熱にパルス電圧を与えることによりヒータ
線の加熱期間と加熱停止期間とを交互にもたせ、
又ヒータ線の加熱期間にヒータ線の故障検出を行
い、加熱停止期間にはパルスジエネレータ出力を
利用してヒータ線の断線検出を禁止して凝似的な
断線出力を阻止するものである。 In this manner, in the embodiment shown in FIG.
By applying a pulse voltage to the heating of a, the heating period and heating stop period of the heater wire are alternately provided,
Furthermore, failure of the heater wire is detected during the heating period of the heater wire, and during the heating stop period, the output of the pulse generator is used to prohibit the detection of a break in the heater wire, thereby preventing a simulated break output.
又第5図、第6図はヒータ線の加熱期間にも加
熱停止期間にもヒータ線の検出動作を行うことを
可能としたものである。第5図でパルスジエネレ
ータPG、ガス検知素子1、比較器COM1,
COM2、警報表示灯LED1、故障表示灯LED2、
は、便宜上第3図と同じ符号を使用するものと考
える。 Furthermore, FIGS. 5 and 6 show that the heater wire detection operation can be performed both during the heater wire heating period and during the heating stop period. In Figure 5, pulse generator PG, gas detection element 1, comparator COM 1 ,
COM 2 , alarm indicator LED 1 , fault indicator LED 2 ,
It is assumed that the same reference numerals as in FIG. 3 are used for convenience.
パルスジエネレータPGにダイオードDをへて
接続する側のヒータ線1aは+電源より直列抵抗
R14,R15をへて接続され、抵抗R14とR15の接続
部はトランジスタQ4のベースに接続される。ヒ
ータ線1aの他端は抵抗R16をへて接地されると
ともに抵抗R17をへてトランジスタQ5のベースに
接続される。ガス検知素子1の半導体1cの1方
電極側は抵抗R18をへて接地されるとともに比較
器COM1の+側入力端子と比較器COM2の−側入
力端子に接続され、他方電極側は+電源端子B1
に接続される。トランジスタQ4のコレクタは抵
抗R20をへて接地Eされるとともにノア回路NOR
の一方端子に接続され、トランジスタQ5のコレ
クタは抵抗R19をへて+電源端子B1に接続される
とともにインバータINVをへてノア回路NORの
他方端子に接続される。比較器COM1の−側入力
端子は抵抗R21をへて+電源端子B1に、又抵抗
R22をへて接地する。比較器COM1の出力側は抵
抗R23,R24をへて接地されるとともに抵抗R23と
R24の接続部はトランジスタ或はゲート極付半導
体Q6のゲート極に結ばれ、このトランジスタQ6
のアノードは警報表示灯LED1、抵抗R25をへて
警報表示用端子B2により接続され、トランジス
タQ6のカソートは接地される。又、ノア回路
NORの出力側は抵抗R26をへて比較器COM2の+
側入力端子に接続され、又この+側入力端子は抵
抗R27をへて+電源端子B1に接続される。比較器
COM2の出力側は抵抗R28,R29をへて接地される
とともに抵抗R28とR29の接続部がトランジスタ
(又はサイリスタのようなゲート極付半導体)Q7
のゲートに結ばれトランジスタQ7のアノードは
故障表示灯LED2をへて故障表示端子B3に接続さ
れ、トランジスタQ7のカソードは接地される。
第6図はパルスジエネレータPGのパルス電圧に
対しヒータ線1a、抵抗R16の電圧降下、トラン
ジスタQ4,Q5のオンオフ、インバータ回路INV
の反転状況、ノア回路NOR、比較器COM2の出
力並びにトランジスタQ7の出力に関する波形を
示している。 The heater wire 1a connected to the pulse generator PG through the diode D is connected to a series resistor from the + power supply.
They are connected through R 14 and R 15 , and the connection between resistors R 14 and R 15 is connected to the base of transistor Q 4 . The other end of the heater wire 1a is grounded through a resistor R16 and connected to the base of a transistor Q5 through a resistor R17 . One electrode side of the semiconductor 1c of the gas detection element 1 is grounded through the resistor R18 and connected to the + side input terminal of the comparator COM 1 and the - side input terminal of the comparator COM 2 , and the other electrode side is +Power terminal B 1
connected to. The collector of transistor Q4 is connected to ground E through resistor R20 and connected to NOR circuit NOR.
The collector of the transistor Q 5 is connected to the + power supply terminal B 1 through the resistor R 19 and to the other terminal of the NOR circuit NOR through the inverter INV. The negative input terminal of comparator COM 1 passes through resistor R 21 to + power supply terminal B 1 , and also connects to resistor R 21.
Ground through R 22 . The output side of comparator COM 1 is grounded through resistors R 23 and R 24 and connected to resistor R 23 .
The connection part of R24 is connected to the gate pole of a transistor or a semiconductor with a gate pole Q6 , and this transistor Q6
The anode of is connected to the alarm indicator LED 1 and the alarm indicator terminal B 2 via the resistor R 25 , and the cathode of the transistor Q 6 is grounded. Also, Noah circuit
The output side of NOR is connected to the + of comparator COM 2 through resistor R 26 .
This + side input terminal is connected to the + power supply terminal B 1 via a resistor R 27 . comparator
The output side of COM 2 is grounded through resistors R 28 and R 29 , and the connection between resistors R 28 and R 29 is a transistor (or a semiconductor with a gate pole such as a thyristor) Q 7
The anode of the transistor Q 7 is connected to the fault indicator terminal B 3 via the fault indicator light LED 2 , and the cathode of the transistor Q 7 is grounded.
Figure 6 shows the pulse voltage of the pulse generator PG, the heater wire 1a, the voltage drop of the resistor R16 , the on/off of the transistors Q4 and Q5 , and the inverter circuit INV.
The waveforms for the inversion situation, the NOR circuit NOR, the output of the comparator COM 2 as well as the output of the transistor Q 7 are shown.
次に第5図に関して第6図と関連づけて本発明
装置の動作説明を行う。 Next, the operation of the apparatus of the present invention will be explained with reference to FIG. 5 in conjunction with FIG. 6.
まずガス検知素子1が正常な場合、パルスジエ
ネレータPGよりのパルス電圧に従つてヒータ線
1aに電圧が印加される期間には、抵抗R16に電
圧降下が発生し、トランジスタQ5はオンとなる
が、トランジスタQ4はオフとなりノア回路NOR
のトランジスタQ4側の入力はL(ロー)となり、
又トランジスタQ5はオンでインバータ回路INV
をへてノア回路NORの他方の入力はH(ハイ)と
なり、ノア回路NORの出力はLで比較器COM2
の+側入力端子には電源電圧を抵抗R27とR26で
分割して電圧が加わる。又比較器COM2の−側入
力端子には半導体1cに流れる電流が正常であれ
ば、予め抵抗R18の電圧降下が+側入力端子電圧
より高く設定されていて、比較器COM2は出力を
ださずトランジスタQ7はオフで故障表示灯LED2
は点灯しない。又パルスジエネレータPGよりの
パルス電圧に従つてヒータ線1aに電圧が印加さ
れない期間には抵抗R16の電圧降下はなくてトラ
ンジスタQ5はオフでインバータ回路INVをへて
ノア回路NORの一端にはLが与えられる。又ト
ランジスタQ4はパルスジエネレータPGが出力を
生じない時に抵抗R14に生じる電圧降下によつて
オンとなり、ノア回路NORの他端にHが与えら
れ、ノア回路NORの出力はLでこの場合も比較
器COM2は出力をださず、トランジスタQ7をオフ
にしたまゝであり、故障表示灯LED2も点灯しな
い。 First, when the gas detection element 1 is normal, a voltage drop occurs across the resistor R 16 and the transistor Q 5 is turned on during the period when the voltage is applied to the heater wire 1a according to the pulse voltage from the pulse generator PG. However, transistor Q4 is turned off and the NOR circuit NOR
The input on the transistor Q4 side becomes L (low),
Also, transistor Q5 is on and the inverter circuit INV
The other input of the NOR circuit NOR becomes H (high), and the output of the NOR circuit NOR is L and the comparator COM 2
The power supply voltage is divided by resistors R27 and R26 and a voltage is applied to the + side input terminal of. Furthermore, if the current flowing through the semiconductor 1c is normal at the negative input terminal of the comparator COM 2 , the voltage drop across the resistor R18 is set in advance to be higher than the voltage at the positive input terminal, and the comparator COM 2 outputs Transistor Q 7 is off and fault indicator LED 2
does not light up. Also, during the period when no voltage is applied to the heater wire 1a according to the pulse voltage from the pulse generator PG, there is no voltage drop across the resistor R16 , and the transistor Q5 is off, passing through the inverter circuit INV to one end of the NOR circuit NOR. is given L. Also, the transistor Q4 is turned on by the voltage drop that occurs across the resistor R14 when the pulse generator PG does not produce an output, and H is applied to the other end of the NOR circuit NOR, and the output of the NOR circuit NOR is L in this case. Comparator COM 2 does not output any output, transistor Q 7 remains off, and fault indicator LED 2 does not light up.
しかし、検知素子1のヒータ線1aが断線した
場合トランジスタQ4,Q5は常にオフとなり、ノ
ア回路NORの出力がHとなつて比較器COM2の
+側入力端子電圧が高くなり、比較器COM2は出
力をとりだし、トランジスタQ7のゲートに電圧
が加えられてトランジスタQ7はオンとなり、故
障表示灯LED2は点灯し故障を知らせるとともに
故障信号を外部の受信機側に与える。又検知素子
の半導体1cが断線した場合、抵抗R18の電圧降
下はほぼ0Vで比較器COM1は働かないが、比較
器COM2の−側入力端子は+側入力端子の抵抗
R27,R26による分割電圧より低下するので、比
較器COM2の出力がとりだされ、トランジスタQ7
のゲート電圧を適当にあげるのでこれをオンと
し、故障表示灯LED2を点灯して故障表示を行う。
尚ガス検知素子1のガス検知にあたつては半導体
1cの抵抗値が変わり減じることにより、流れる
電流は増して抵抗R18の電圧降下が大となり、比
較器COM1の−側入力端子に加わる+電源端子よ
り抵抗R21をへた電圧より大となり比較器COM1
は出力をとりだしトランジスタQ6のゲート電圧
を上昇せしめてこれをオンとし、警報表示灯
LED1を点灯するのである。 However, if the heater wire 1a of the sensing element 1 is disconnected, the transistors Q 4 and Q 5 are always turned off, the output of the NOR circuit NOR becomes H, and the + side input terminal voltage of the comparator COM 2 becomes high, and the comparator COM 2 takes out the output, voltage is applied to the gate of transistor Q 7 , transistor Q 7 is turned on, failure indicator LED 2 lights up, notifying the failure and giving a failure signal to the external receiver side. If the semiconductor 1c of the sensing element is disconnected, the voltage drop across the resistor R18 will be approximately 0V and the comparator COM 1 will not work, but the negative input terminal of the comparator COM 2 will be connected to the resistance of the positive input terminal.
Since the voltage is lower than the voltage divided by R 27 and R 26 , the output of the comparator COM 2 is taken out and the transistor Q 7
Increase the gate voltage appropriately, turn it on, and turn on the failure indicator LED 2 to indicate a failure.
When gas detection element 1 detects gas, as the resistance value of semiconductor 1c changes and decreases, the flowing current increases and the voltage drop across resistor R18 increases, which is applied to the negative input terminal of comparator COM1 . The voltage across the resistor R 21 from the + power supply terminal is greater than the voltage and the comparator COM 1
takes out the output and increases the gate voltage of transistor Q 6 to turn it on and turn on the alarm indicator light.
This will light up LED 1 .
かくて第5図の実施例ではガス検知素子1のヒ
ータ線1a並びに半導体1cによる素子の断線や
破損を検出できるとともにヒータ線1aの加熱パ
ルス電圧を与えることにより、ヒータ線の加熱と
加熱停止を交互に行わせ、又ヒータ線の加熱期間
並びに加熱停止期間のいずれの時期にも常にヒー
タ線の断線検出を確実に行うことができるもので
ある。 Thus, in the embodiment shown in FIG. 5, it is possible to detect disconnection or damage to the element due to the heater wire 1a and semiconductor 1c of the gas detection element 1, and by applying a heating pulse voltage to the heater wire 1a, it is possible to heat the heater wire and stop the heating. This is done alternately, and disconnection of the heater wire can always be detected reliably during both the heating period and the heating stop period.
以上の説明からわかるように、本発明のパルス
電源を用いてヒータ線の加熱期間と加熱停止期間
を与え、ガスの吸着と脱着とを交互に行うガス漏
れ検知装置は、ヒータ線の加熱停止期間における
加熱用電流が流れないことにより凝似的な断線に
よる誤報を防止してヒータ線の断線のみを確実に
検出できるとともに、金属酸化物半導体の損傷切
断による断線や半導体と両電極との接触不良等に
よる素子の破損事故をも検出できるものである。 As can be seen from the above explanation, the gas leak detection device that uses the pulse power supply of the present invention to give the heater wire a heating period and a heating stop period, and alternately adsorbs and desorbs gas, Since the heating current does not flow in the heater wire, it is possible to prevent false alarms due to simulated disconnections and to reliably detect only disconnections in the heater wire, as well as to prevent disconnections due to damage to the metal oxide semiconductor and poor contact between the semiconductor and both electrodes. It is also possible to detect element damage accidents caused by such factors.
第1図と第2図は本発明に使用される1実施例
のガス検知素子の斜面図と他の実施例素子の略線
図、第3図、第5図は本発明の異る実施例装置の
主要部構成結線図、第4図、第6図は夫々第3
図、第5図における各部の動作波形線図である。
図で1はガス検知素子、1aはヒータ線、1c
は半導体、PGはパルスジエネレータ、COM1,
COM2は比較器、INVはインバータ、LED1は警
報表示灯、LED2は故障表示灯、R1−R29は抵抗、
Q1〜Q7はトランジスタ、NORはノア回路。
1 and 2 are a perspective view of a gas detection element according to one embodiment used in the present invention and a schematic diagram of another embodiment of the element, and FIGS. 3 and 5 are different embodiments of the present invention. The wiring diagrams of the main parts of the device, Figures 4 and 6, are shown in Figure 3.
6 is an operation waveform diagram of each part in FIG. 5. FIG. In the figure, 1 is the gas detection element, 1a is the heater wire, 1c
is a semiconductor, PG is a pulse generator, COM 1 ,
COM 2 is the comparator, INV is the inverter, LED 1 is the alarm indicator, LED 2 is the fault indicator, R 1 - R 29 is the resistor,
Q1 to Q7 are transistors, and NOR is a NOR circuit.
Claims (1)
停止期間を設け、前記加熱停止期間のヒータ線を
加熱しない低温状態でガスを吸着せしめることに
より、金属酸化物半導体の導電度又は抵抗値の変
化を利用してガス漏れ検出を行い、前記加熱期間
のヒータ線の加熱により前記ガスを素子より脱着
するタイプのガス検知素子を警報装置と組合せて
ガス漏れ警報を行うガス漏れ検知装置において、 前記ヒータ線を通じて流れる加熱用電流を検出
する第1の電流検出手段と、 前記第1の電流検出手段が加熱用電流を検出し
なくなつた時に前記ヒータ線の断線を判別して断
線信号を出力するヒータ断線判別手段と、 前記パルス電源による前記加熱停止期間を検出
して、該加熱停止期間の間、前記ヒータ断線判別
手段の動作を禁止させる禁止手段と、 前記金属酸化物半導体を通じて流れる電流を検
出する第2の電流検出手段と、 前記第2の電流検出手段によつて検出される電
流が所定値以下に低下した時に、前記金属酸化物
半導体の断線あるいは接触不良を判別して断線信
号を出力する半導体断線判別手段と、 を設けてなることを特徴とするガス漏れ検知装
置。[Claims] 1. By providing a heating period and a heating stop period for the heater wire using a pulse power supply, and adsorbing gas in a low temperature state without heating the heater wire during the heating stop period, the conductivity or A gas leak detection device that detects a gas leak by using a change in resistance value, and issues a gas leak alarm by combining a gas detection element of the type that desorbs the gas from the element by heating a heater wire during the heating period with an alarm device. a first current detection means for detecting a heating current flowing through the heater wire; and a breakage signal for determining a break in the heater wire when the first current detection means no longer detects the heating current; heater breakage determining means for outputting a signal; inhibiting means for detecting the heating stop period by the pulsed power supply and prohibiting the operation of the heater breakage determining means during the heating stop period; a second current detection means for detecting a current; and when the current detected by the second current detection means drops below a predetermined value, a disconnection or poor contact is determined in the metal oxide semiconductor, and the disconnection is detected. A gas leak detection device comprising: semiconductor disconnection determination means that outputs a signal;
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58178214A JPS6070344A (en) | 1983-09-28 | 1983-09-28 | Gas leak detecting apparatus |
| JP24678890A JPH03150455A (en) | 1983-09-28 | 1990-09-17 | Gas leak detecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58178214A JPS6070344A (en) | 1983-09-28 | 1983-09-28 | Gas leak detecting apparatus |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24678890A Division JPH03150455A (en) | 1983-09-28 | 1990-09-17 | Gas leak detecting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6070344A JPS6070344A (en) | 1985-04-22 |
| JPH0333224B2 true JPH0333224B2 (en) | 1991-05-16 |
Family
ID=16044575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58178214A Granted JPS6070344A (en) | 1983-09-28 | 1983-09-28 | Gas leak detecting apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6070344A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6189155U (en) * | 1984-11-16 | 1986-06-10 | ||
| JPS61126458A (en) * | 1984-11-22 | 1986-06-13 | Mitsubishi Electric Corp | Detector |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5343320B2 (en) * | 1972-12-27 | 1978-11-18 | ||
| JPS524897A (en) * | 1975-06-30 | 1977-01-14 | Omron Tateisi Electronics Co | Gas detector |
-
1983
- 1983-09-28 JP JP58178214A patent/JPS6070344A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6070344A (en) | 1985-04-22 |
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