JPH0334620B2 - - Google Patents
Info
- Publication number
- JPH0334620B2 JPH0334620B2 JP2471882A JP2471882A JPH0334620B2 JP H0334620 B2 JPH0334620 B2 JP H0334620B2 JP 2471882 A JP2471882 A JP 2471882A JP 2471882 A JP2471882 A JP 2471882A JP H0334620 B2 JPH0334620 B2 JP H0334620B2
- Authority
- JP
- Japan
- Prior art keywords
- present
- film
- compound
- manufacturing
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000000463 material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 11
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910002441 CoNi Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- NPUACKRELIJTFM-UHFFFAOYSA-N cr gas Chemical compound C1=NC2=CC=CC=C2OC2=CC=CC=C21 NPUACKRELIJTFM-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/85—Coating a support with a magnetic layer by vapour deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Description
本発明は垂直記録方式に用いる記録媒体の製造
方法に関し、長尺の媒体を安定に製造できるよう
にすることを目的とするものである。
垂直記録方式は、短波長記録に適する記録方式
として注目され、媒体の開発、記録方式の研究が
各方面で盛んである。
垂直方向に磁化容易軸を有する、いわゆる垂直
磁化膜は、CoにCrを添加してMsを下げ、かつh.
c.p構造の結晶のＣ軸を基板面の垂直方向に小さ
な分散で配向させた膜が良く知られる。
この膜の製法は、高周波スパツタリング法、電
子ビーム蒸着法が知られる。高周波スパツタリン
グ法は、成膜速度が小さいため、実用に供する上
では難点がある。
一方電子ビーム蒸着法は、Crの成分比を一定
に保持する上で困難を伴うため、成膜速度の大き
さを生かす上で工夫を必要とする。
Crは昇華するため、蒸着速度の制御がむずか
しいからである。
本発明はかかる点に鑑みなされたもので蒸発源
としては、Cr又はCoNi等のCoをベースとし、蒸
気圧の近い物質の組み合わせたものを用いCrの
添加は、Crの気体プラズマからの析出により行
い、成分比を安定に保持するものである。以下に
図面を用い本発明を詳細に説明する。
図は本発明を実施するための装置の一例を示
す。図に示すように、高分子成形物等よりなるテ
ープ状基体１は、温度制御された円筒状キヤン２
の周側面に沿つて、送り出し軸３より、巻取軸４
へ移動する。その間、マスク５の開孔部を通し蒸
着される。
Co又はCo合金６は、電子ビーム加熱により蒸
気化される。８は電気ビーム源を模式的に示す。
７は蒸気源容器である。
Crの供給は、プラズマより行うよう構成する。
例えば、一端が開放されたコイル状の高周波電極
９にマツチングボツクス１０の調整により、高周
波電源１１より高周波電力を効率良く供給し、高
周波プラズマを生成をするよう構成する。
放電気体としてCr（C9H12）2などのガス状Cr化
合物をニードル弁１２を調節して、系内に導入す
る。導入ノズル１３は勿論、真空槽１４の外部
も、180℃程度に保持する必要がある。それは、
上記気体の導入量を一定に制限するためである。
真空槽１４は、巻取り機構を配する上室１５
と、プラズマ室１６と、蒸発室１７に、かくへき
１８，１９で仕切られる。電子ビーム蒸発源は
10-4Torr以上の高真空を必要とするため、ある
程度の差圧をとる必要もあり、個々に、真空排気
系２０，２１，２２を具備させるのが良い。
２３はシヤツタであり、２４は高圧導入用の絶
縁端子である。
次に具体的に本発明の実施例を説明する。
実施例 １
基体として、ポリエチレンテレフタレートフイ
ルム（厚さ12μｍ、幅150mm、長さ1000ｍ）を用
いた。
高周波電極は４ターンに構成され、高周波電力
は、13.56MHz490Wに制御した。
Co蒸発源は、30kV、最大4Aの電子ビーム加熱
方式を採用し、蒸発源容器はZrO2製で、Coの供
給は、蒸発源容器に直径15mmのロツドを上記電気
ビームの一部のパワーで溶解し補給する方法をと
つた。実験結果を表１に示す。
The present invention relates to a method for manufacturing a recording medium used in a perpendicular recording system, and an object of the present invention is to enable stable manufacture of a long medium. The perpendicular recording method has attracted attention as a recording method suitable for short wavelength recording, and research on media development and recording methods is active in various fields. A so-called perpendicular magnetization film, which has an easy axis of magnetization in the perpendicular direction, is produced by adding Cr to Co to lower Ms and h.
A film in which the C-axis of a cp-structured crystal is oriented with small dispersion in the direction perpendicular to the substrate surface is well known. The high frequency sputtering method and the electron beam evaporation method are known as methods for manufacturing this film. Since the high-frequency sputtering method has a low film formation rate, it is difficult to put it into practical use. On the other hand, with the electron beam evaporation method, it is difficult to maintain a constant Cr component ratio, so it requires some ingenuity to take advantage of the high deposition rate. This is because Cr sublimes, making it difficult to control the deposition rate. The present invention was developed in view of this point, and the evaporation source is based on Cr or Co such as CoNi, and a combination of substances with similar vapor pressures is used. Cr is added by precipitation from Cr gas plasma. This is to keep the component ratio stable. The present invention will be explained in detail below using the drawings. The figure shows an example of a device for implementing the invention. As shown in the figure, a tape-shaped substrate 1 made of a polymer molded product or the like is attached to a temperature-controlled cylindrical can 2.
along the circumferential surface of the winding shaft 4 from the feed shaft 3.
Move to. During this time, the vapor is deposited through the opening of the mask 5. Co or Co alloy 6 is vaporized by electron beam heating. 8 schematically shows an electric beam source.
7 is a steam source container. The configuration is such that Cr is supplied from plasma.
For example, by adjusting a matching box 10 to a coil-shaped high-frequency electrode 9 with one end open, high-frequency power is efficiently supplied from a high-frequency power source 11 to generate high-frequency plasma. A gaseous Cr compound such as Cr(C 9 H 12 ) 2 is introduced into the system as a discharge electric material by adjusting the needle valve 12 . It is necessary to maintain not only the introduction nozzle 13 but also the outside of the vacuum chamber 14 at about 180°C. it is,
This is to limit the amount of the gas introduced to a constant value. The vacuum chamber 14 has an upper chamber 15 in which a winding mechanism is arranged.
A plasma chamber 16 and an evaporation chamber 17 are separated by partitions 18 and 19. electron beam evaporation source
Since a high vacuum of 10 -4 Torr or more is required, it is also necessary to maintain a certain degree of pressure difference, so it is preferable to provide vacuum exhaust systems 20, 21, and 22 individually. 23 is a shutter, and 24 is an insulated terminal for introducing high voltage. Next, embodiments of the present invention will be specifically described. Example 1 A polyethylene terephthalate film (thickness: 12 μm, width: 150 mm, length: 1000 m) was used as a substrate. The high-frequency electrode was configured with 4 turns, and the high-frequency power was controlled to 13.56MHz490W. The Co evaporation source uses an electron beam heating method of 30kV and maximum 4A, and the evaporation source container is made of ZrO 2.Co is supplied to the evaporation source container using a rod with a diameter of 15mm using a portion of the power of the above electric beam. We adopted a method of dissolving and replenishing it. The experimental results are shown in Table 1.
【表】
なお表１における本発明Ａはキヤン直径50cm、
同温度70℃とし厚さ0.2μｍの磁性膜を形成した場
合を示し、本発明Ｂはキヤン直径100cm、同温度
80℃とし、厚さ0.2μｍの磁性膜を形成した場合を
示す。
実施例 ２
ポリイミドフイルム（厚さ25μｍ）を用い、キ
ヤン温度200℃で、本発明を実施した場合の生産
性と特性面を他の方法におけるのと比較した結果
を表２示す。[Table] In addition, the present invention A in Table 1 has a can diameter of 50 cm,
This shows the case where a magnetic film with a thickness of 0.2 μm is formed at the same temperature of 70°C, and the present invention B has a can diameter of 100 cm and the same temperature.
The case where a magnetic film with a thickness of 0.2 μm was formed at 80° C. is shown. Example 2 Table 2 shows the results of comparing the productivity and characteristics when the present invention was carried out using a polyimide film (thickness: 25 μm) at a can temperature of 200° C. and when using other methods.
【表】
以上の表１、表２に示した結果から明らかなよ
うに、本発明により製造したものは、長尺ものの
長手方向における性状の変動が極めて小さなもの
となつており、しかも生産性が高いものとなつて
いる。
なお本発明は、基体上に非磁性下地を配した場
合、或いはパーマロイ薄膜を配した２層構成の場
合は勿論、基体の両面にかかる構成を得る場合も
有効である。
又、基体の種類によらず有効で、さらに磁性膜
としてCo−Crに限定されず他の垂直磁化膜でCr
を含有するものについて共通に効果がある。
以上の説明により明らかなように、本発明は、
高い生産性と、高品質の垂直磁化膜の生産を両立
させ得るものであつて、テープ、デイスクの形態
によらず、長尺の原反を得るのに最適であつて、
その工業的有価値性は大きいものがある。[Table] As is clear from the results shown in Tables 1 and 2 above, the products manufactured according to the present invention have extremely small fluctuations in properties in the longitudinal direction of long products, and have improved productivity. It is becoming expensive. Note that the present invention is effective not only when a nonmagnetic base is disposed on the substrate, or when a two-layer structure is provided with a permalloy thin film, but also when such a structure is obtained on both sides of the substrate. In addition, it is effective regardless of the type of substrate, and the magnetic film is not limited to Co-Cr, but can be used with other perpendicularly magnetized films.
It is effective in common for those containing. As is clear from the above explanation, the present invention includes:
It is capable of achieving both high productivity and the production of high-quality perpendicularly magnetized films, and is ideal for obtaining long original films regardless of the form of tape or disk.
Its industrial value is great.
図は本発明を実施するために用いられる装置の
一例を示す図である。
１……基体、２……円筒状キヤン、６……Co
合金、９……高周波電極、１３……導入ノズル。
The figure is a diagram showing an example of an apparatus used to carry out the present invention. 1... Base body, 2... Cylindrical can, 6... Co
Alloy, 9...High frequency electrode, 13...Introduction nozzle.
Claims (1)
にCoを含む蒸気流を差し向けるとともに上記蒸
気流をガス状Cr化合物を放電気体とするプラズ
マ中を通過せしめることを特徴とする磁気記録媒
体の製造方法。 ２ Cr化合物がCr（C6H12）2で表される化合物で
あることを特徴とする特許請求の範囲第１項記載
の磁気記録媒体の製造方法。[Claims] 1. A vapor flow containing Co is directed to a substrate moving along the circumferential side of a cylindrical can, and the vapor flow is caused to pass through a plasma containing a gaseous Cr compound as a discharge material. A method for manufacturing a magnetic recording medium. 2. The method for manufacturing a magnetic recording medium according to claim 1, wherein the Cr compound is a compound represented by Cr(C 6 H 12 ) 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57024718A JPS58141444A (en) | 1982-02-17 | 1982-02-17 | Method for manufacturing magnetic recording media |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57024718A JPS58141444A (en) | 1982-02-17 | 1982-02-17 | Method for manufacturing magnetic recording media |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58141444A JPS58141444A (en) | 1983-08-22 |
| JPH0334620B2 true JPH0334620B2 (en) | 1991-05-23 |
Family
ID=12145935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57024718A Granted JPS58141444A (en) | 1982-02-17 | 1982-02-17 | Method for manufacturing magnetic recording media |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58141444A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100731483B1 (en) | 2005-04-15 | 2007-06-21 | 삼성에스디아이 주식회사 | Plasma Display Panel Manufacturing Equipment |
-
1982
- 1982-02-17 JP JP57024718A patent/JPS58141444A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58141444A (en) | 1983-08-22 |
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