JPH0334622B2 - - Google Patents
Info
- Publication number
- JPH0334622B2 JPH0334622B2 JP16675383A JP16675383A JPH0334622B2 JP H0334622 B2 JPH0334622 B2 JP H0334622B2 JP 16675383 A JP16675383 A JP 16675383A JP 16675383 A JP16675383 A JP 16675383A JP H0334622 B2 JPH0334622 B2 JP H0334622B2
- Authority
- JP
- Japan
- Prior art keywords
- base material
- substrate
- magnetic
- ionized
- adhesion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 27
- 239000010408 film Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 238000007733 ion plating Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910001337 iron nitride Inorganic materials 0.000 description 1
- -1 nitrogen ions Chemical class 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】
本発明は、イオンプレーテイング法により絶縁
性基材上に磁性膜を形成する磁気記録媒体の製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a magnetic recording medium in which a magnetic film is formed on an insulating substrate by an ion plating method.
プラスチツクのフイルム、板などの電気絶縁性
基材にイオン化した鉄及びコバルト等の磁性金属
をそれぞれ窒素及び酸素などと反応させながら蒸
着することにより保磁力の優れた磁気記録媒体を
製造する方法はすでに提案されているが、イオン
化された磁性金属が電気絶縁性基材面に飛着して
付着することにより該基材面には電荷が蓄積され
て電位が上昇し、その結果磁性金属の成膜効率が
低下すると共に該基材面の中央部及び周辺部に集
中して磁性金属が蒸着されその膜厚にばらつきが
生じ均一な磁気特性が得られないという不都合が
あつた。 There is already a method for manufacturing magnetic recording media with excellent coercive force by depositing ionized magnetic metals such as iron and cobalt on electrically insulating substrates such as plastic films and plates while reacting with nitrogen and oxygen, respectively. It has been proposed that when ionized magnetic metal flies and adheres to the surface of an electrically insulating substrate, charges are accumulated on the surface of the substrate and the potential increases, resulting in the formation of a magnetic metal film. In addition to a decrease in efficiency, the magnetic metal is deposited in a concentrated manner in the center and periphery of the base material surface, resulting in variations in film thickness and inconveniences in that uniform magnetic properties cannot be obtained.
また、イオン化された鉄及びコバルト等の磁性
金属をそれぞれイオン化された窒素及び酸素など
と共に電気絶縁性基材上に照射して該基材上に磁
気記録媒体を製造する方法も提案されているが、
この方法は前記のような不都合が更に著しく、例
えば５×５cm2の基材中の飽和磁気モーメントのば
らつきが30％に達する場合が生じた。 A method has also been proposed in which a magnetic recording medium is manufactured on an electrically insulating substrate by irradiating ionized magnetic metals such as iron and cobalt together with ionized nitrogen and oxygen, respectively. ,
This method suffers from the above-mentioned disadvantages even more significantly; for example, the variation in saturation magnetic moment in a 5×5 cm 2 base material sometimes reaches 30%.
本発明はかかる不都合を解消することをその目
的としたもので、イオン捕集電位が付与される被
着基材支持体に取付けられた電気絶縁性被着基材
上にイオン化された磁性金属を被着しながらイオ
ン化されたガスを照射して磁性薄膜を形成する式
の製造方法において、前記被着基材の被着面に導
電膜を形成し、該導電膜を前記被着基材支持体に
電気的に接続して該被着基材を被着基材支持体に
取付けることを特徴とする。 The purpose of the present invention is to eliminate such inconveniences, and the present invention is aimed at disposing an ionized magnetic metal on an electrically insulating adhesion substrate attached to an adhesion substrate support to which an ion-trapping potential is applied. In a manufacturing method of forming a magnetic thin film by irradiating ionized gas while adhering, a conductive film is formed on the adhering surface of the adhering substrate, and the conductive film is attached to the adhering substrate support. The substrate is electrically connected to the substrate to attach the substrate to the substrate support.
以上の構成を有する本発明の方法によれば、電
気絶縁性被着基材に蒸着された磁性金属の膜厚の
ばらつきを著しく低下する効果を有し、例えば５
×５cm2の被着基材中の飽和磁気モーメントのばら
つきを２％以内とすることができる。 According to the method of the present invention having the above configuration, it has the effect of significantly reducing the variation in the film thickness of the magnetic metal deposited on the electrically insulating deposition substrate, for example,
The variation in the saturation magnetic moment in the 5 cm 2 adherend substrate can be kept within 2%.
以下本発明の実施例を図面につき説明する。本
発明の製造方法を実施するために第１図示のよう
なイオンプレーテイング装置を使用した。該装置
は、磁性金属例えば純度99.9％の鉄を収容したる
つぼから成る蒸発源１と、該磁性金属に対して電
子ビームを照射してこれを蒸発させる電子ビーム
放射源２と、該磁性金属をイオン化するための熱
電子放射フイラメント３及び正電位が付与される
電極４と、電気絶縁性の被着基材５が取付けられ
イオン捕集電位が付与された被着基材支持体６
と、バルブ７を介して流入する窒素ガスをイオン
化すると共に該窒素イオンを加速する例えばフリ
ーマン型イオン銃８と膜厚計９とを具備し、これ
等はいずれも例えば10-6Torrに減圧された真空
槽内に配置されて構成される。 Embodiments of the present invention will be described below with reference to the drawings. In order to carry out the manufacturing method of the present invention, an ion plating apparatus as shown in the first figure was used. The device includes an evaporation source 1 consisting of a crucible containing a magnetic metal, such as iron with a purity of 99.9%, an electron beam radiation source 2 that irradiates the magnetic metal with an electron beam to evaporate it, and A thermionic emitting filament 3 for ionization, an electrode 4 to which a positive potential is applied, and an adhering substrate support 6 to which an electrically insulating adhering substrate 5 is attached and an ion-trapping potential is applied.
It is equipped with, for example, a Freeman type ion gun 8 and a film thickness meter 9, which ionize the nitrogen gas flowing in through the valve 7 and accelerate the nitrogen ions, both of which are reduced in pressure to, for example, 10 -6 Torr. It is configured by being placed in a vacuum chamber.
次にこの装置を用いて本発明の製造方法を説明
すると、例えば縦５cm、横５cmの例えばガラス板
からなる被着基材５の一方の面に例えば3000Åの
厚さにチタン（Ti）を蒸着し、この被着基材５
を第２図のようにチタン膜１０を表にするととも
に被着基材支持体６に電気的に接続させて該支持
体６に固定し、該支持体６を蒸発源１の真上に水
平にして設置した。そして電子ビーム放射源２か
らの電子ビームを蒸発源１の純度99.9％の鉄に照
射してこれを蒸発させると共に50vの正電位が付
与された電極４と熱電子放射フイラメント３とで
イオン化し、蒸発源１に対し−200vの電位が付
与された被着基材支持体６に流れる電流を25Åに
してイオン化された鉄を被着基材５に被着する。
次に前記イオン銃８から被着基材５にイオンを照
射し該被着基材５に流れる電流を更に25Å増加さ
せ、50Åとなるようにして100秒間行ない、前記
被着基材５上に鉄窒化物を1000Åの厚さに形成し
た。 Next, to explain the manufacturing method of the present invention using this apparatus, titanium (Ti) is vapor-deposited to a thickness of, for example, 3000 Å on one side of a substrate 5 made of a glass plate measuring, for example, 5 cm in length and 5 cm in width. And this adhesion base material 5
As shown in FIG. 2, with the titanium film 10 facing up, it is electrically connected to and fixed to the substrate support 6, and the support 6 is placed horizontally just above the evaporation source 1. I installed it. Then, the electron beam from the electron beam radiation source 2 is irradiated onto the 99.9% pure iron in the evaporation source 1 to evaporate it, and at the same time, it is ionized by the electrode 4 to which a positive potential of 50V is applied and the thermionic emission filament 3. Ionized iron is deposited on the deposition substrate 5 by applying a current of 25 Å to the substrate support 6 to which a potential of −200 V is applied with respect to the evaporation source 1 .
Next, the ion gun 8 irradiates the adherend substrate 5 with ions, and the current flowing through the adherend substrate 5 is further increased by 25 Å to 50 Å for 100 seconds. Iron nitride was formed to a thickness of 1000 Å.
この被着基材を0.5cm×0.5cmの大きさに切断し
て作成した各試料につき試料振動型磁力計
（VSM）により飽和磁気モーメントを測定し、そ
の分布を調べた結果、平均4.25×10-3emu、最大
4.3×10-3emu、最小4.17×10-3emuでそのばらつ
きは平均値の上下２％以内に集中していた。 The saturation magnetic moment was measured using a vibrating sample magnetometer (VSM) for each sample prepared by cutting this adhering base material into a size of 0.5 cm x 0.5 cm, and the distribution was investigated. As a result, the average 4.25 x 10 -3 emu, max
4.3×10 -3 emu, minimum 4.17×10 -3 emu, and the variation was concentrated within 2% above and below the average value.
比較例
ガラス板にチタンを蒸着しない以外は前記実施
例と同様にして作成した試料について飽和磁気モ
ーメントの分布を調べた結果、平均3.50×
10-3emu、最大4.25×10-3emu、最小2.5×
10-3emuでそのばらつきは平均値の上下20〜30％
であつた。Comparative Example As a result of examining the distribution of saturation magnetic moment for a sample prepared in the same manner as in the above example except that titanium was not deposited on the glass plate, the average was 3.50 ×
10-3 emu, maximum 4.25× 10-3 emu, minimum 2.5×
At 10 -3 emu, the variation is 20-30% above and below the average value.
It was hot.
以上の実施例と比較例を対比して明らかなよう
に磁性膜を電気絶縁性被着基材にイオンプレーテ
イング法により形成する場合、該基材に予め導電
膜を形成し、該導電膜をイオン捕集電位とするこ
とによつてほぼ均一な磁気特性及び膜厚を有する
磁気記録媒体を得ることができた。 As is clear from comparing the above Examples and Comparative Examples, when a magnetic film is formed on an electrically insulating adhering base material by the ion plating method, a conductive film is formed on the base material in advance, and the conductive film is By setting the ion trapping potential, a magnetic recording medium with substantially uniform magnetic properties and film thickness could be obtained.
第１図は本発明の製造方法に使用されるイオン
プレーテイング装置の１例の模式図、第２図は被
着基材が取付けられた状態の被着基材支持体の側
面図を示す。
１……蒸発源、２……電子ビーム放射源、３…
…熱電子放射フイラメント、４……電極、５……
被着基材、６……被着基材支持体、８……イオン
銃。
FIG. 1 is a schematic diagram of an example of an ion plating apparatus used in the production method of the present invention, and FIG. 2 is a side view of an adherend substrate support with an adherend substrate attached thereto. 1... Evaporation source, 2... Electron beam radiation source, 3...
...Thermionic emitting filament, 4... Electrode, 5...
Adhering base material, 6... Adhering base material support, 8... Ion gun.
Claims (1)
に取付けられた電気絶縁性被着基材上にイオン化
された磁性金属を被着しながらイオン化されたガ
スを照射して磁性薄膜を形成する式の製造方法に
おいて、前記被着基材の被着面に導電膜を形成
し、該導電膜を前記被着基材支持体に電気的に接
続して該被着基材を被着基材支持体に取付けるこ
とを特徴とする磁気記録媒体の製造方法。1 Forming a magnetic thin film by irradiating ionized gas while depositing an ionized magnetic metal on an electrically insulating deposition substrate attached to a deposition substrate support to which an ion-trapping potential is applied. In the manufacturing method of the type, a conductive film is formed on the adhesion surface of the adhesion base material, the conductive film is electrically connected to the adhesion base material support, and the adhesion base material is connected to the adhesion base material. 1. A method for manufacturing a magnetic recording medium, which comprises attaching it to a material support.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16675383A JPS6059535A (en) | 1983-09-12 | 1983-09-12 | Production of magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16675383A JPS6059535A (en) | 1983-09-12 | 1983-09-12 | Production of magnetic recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6059535A JPS6059535A (en) | 1985-04-05 |
| JPH0334622B2 true JPH0334622B2 (en) | 1991-05-23 |
Family
ID=15837095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16675383A Granted JPS6059535A (en) | 1983-09-12 | 1983-09-12 | Production of magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6059535A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05106029A (en) * | 1991-10-15 | 1993-04-27 | Mitsubishi Electric Corp | Thin film forming equipment |
-
1983
- 1983-09-12 JP JP16675383A patent/JPS6059535A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6059535A (en) | 1985-04-05 |
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