JPH0334827B2 - - Google Patents
Info
- Publication number
- JPH0334827B2 JPH0334827B2 JP59103030A JP10303084A JPH0334827B2 JP H0334827 B2 JPH0334827 B2 JP H0334827B2 JP 59103030 A JP59103030 A JP 59103030A JP 10303084 A JP10303084 A JP 10303084A JP H0334827 B2 JPH0334827 B2 JP H0334827B2
- Authority
- JP
- Japan
- Prior art keywords
- flow velocity
- semiconductor
- temperature
- fluid
- detection element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P5/00—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft
- G01P5/10—Measuring speed of fluids, e.g. of air stream; Measuring speed of bodies relative to fluids, e.g. of ship, of aircraft by measuring thermal variables
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/696—Circuits therefor, e.g. constant-current flow meters
- G01F1/698—Feedback or rebalancing circuits, e.g. self heated constant temperature flowmeters
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Volume Flow (AREA)
- Fluid Mechanics (AREA)
- Engineering & Computer Science (AREA)
- Aviation & Aerospace Engineering (AREA)
- Indicating Or Recording The Presence, Absence, Or Direction Of Movement (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は流体の流速と方向を検出する半導体流
速検出器に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor flow rate detector for detecting the flow rate and direction of a fluid.
流れの計測は、産業活動や日常生活に於いて重
要なものであり広範囲な領域で使われている。流
速測定用としては、熱線式、超音波式等がある
が、これらは装置が大型、複雑であるとか、量産
性に乏しく高価である等という問題を抱えてい
る。又、流速と流れ方向を同時に測定できるもの
は、気象観測に用いられている機械式の他は殆ど
無いというのが現状である。この様な状況のも
と、小型で値段が安く、簡便に流体の流速と流れ
方向が測れる検出器の開発が望まれている。
Flow measurement is important in industrial activities and daily life and is used in a wide range of areas. There are hot wire type, ultrasonic type, etc. for measuring flow velocity, but these have problems such as large and complicated devices, poor mass production, and high cost. Furthermore, at present, there are almost no devices other than the mechanical type used for weather observation that can measure flow velocity and direction at the same time. Under these circumstances, there is a demand for the development of a small, inexpensive detector that can easily measure the flow velocity and direction of fluid.
本発明は、小型で低価格、かつ簡便に流体の流
速と流れ方向が測定できる半導体流速検出器を提
供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor flow rate detector that is small, inexpensive, and capable of easily measuring the flow rate and flow direction of a fluid.
本発明は、半導体基板上の中央に発熱用素子が
形成され、この発熱用素子を中心とした円周上に
対称に４個の温度測定用素子が形成されている半
導体流速検出素子を用い、この素子の温度が流体
の温度よりも一定温度高く保持される様に前記発
熱用素子を発熱させ、流体の流速や流れ方向に対
応して変化する発熱用素子と温度測定用素子に流
れる電流あるいは両素子が関係する電位を出力と
して検知することにより、流体の流速と流れ方向
の測定を行なうものである。
The present invention uses a semiconductor flow rate detection element in which a heating element is formed at the center of a semiconductor substrate, and four temperature measuring elements are formed symmetrically on the circumference around this heating element, The heating element is made to generate heat so that the temperature of this element is maintained at a constant temperature higher than the temperature of the fluid, and the current flowing through the heating element and the temperature measuring element changes depending on the flow velocity and direction of the fluid. The flow velocity and flow direction of the fluid are measured by detecting the potentials related to both elements as outputs.
本発明によれば、小型かつ安価な装置で、流体
の流速と流れ方向を同時に測定することができ
る。
According to the present invention, the flow velocity and flow direction of a fluid can be measured simultaneously with a small and inexpensive device.
本発明の実施例を図面を参照して説明する。第
１図は一実施例の半導体流速検出器の構成要素で
ある半導体流速方向検出素子４であり、半導体基
板１の中央に発熱用素子として発熱用トランジス
タ２が形成され、他に発熱用トランジスタ２を中
心とした円周上に温度測定用素子として温度測定
用トランジスタ３ａ，３ｂ，３ｃ，３ｄが各々
90°ずれた対称の位置に形成されている。この半
導体流速方向検出素子４は、第２図に示される様
なパツケージ５にマウントされて、第３図に示す
半導体流速方向検出器駆動回路に接続されて半導
体流速方向検出器を構成している。半導体流速方
向検出器駆動回路では、トランジスタのベース・
エミツタ電圧が温度に比例することを利用して４
個の温度測定用トランジスタ３ａ〜３ｄによる平
均温度を半導体流速方向検出素子４の温度として
検出し、流体の温度を流体の温度測定用トランジ
スタ６から検出している。オペアンプ７は検出し
た半導体流速方向検出素子４と流体の温度を比較
し、半導体流速方向検出素子４が流体よりも一定
温度高い状態に保たれる様に、発熱用トランジス
タ２に流れる電流を変化させ、発熱を制御するも
のである。出力としては、発熱用トランジスタ２
のコレクタ電位Vcと発熱用トランジスタ２を狭
んで向い合う温度測定用トランジスタ３ａと３ｃ
のコレクタの電位差V1と、同じく３ｂと３ｄの
コレクタの電位差V2の３出力を検出している。
Embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows a semiconductor flow velocity direction detection element 4 which is a component of a semiconductor flow velocity detector according to an embodiment, in which a heat generating transistor 2 is formed as a heat generating element in the center of a semiconductor substrate 1, and a heat generating transistor 2 is formed in the center of a semiconductor substrate 1 as a heat generating element. Temperature measuring transistors 3a, 3b, 3c, and 3d are arranged as temperature measuring elements on a circumference centered on .
They are formed in symmetrical positions shifted by 90 degrees. This semiconductor flow velocity direction detection element 4 is mounted on a package 5 as shown in FIG. 2, and connected to a semiconductor flow velocity direction detector drive circuit shown in FIG. 3 to constitute a semiconductor flow velocity direction detector. . In the semiconductor flow direction detector drive circuit, the base of the transistor
Using the fact that emitter voltage is proportional to temperature,
The average temperature of the temperature measuring transistors 3a to 3d is detected as the temperature of the semiconductor flow velocity direction detecting element 4, and the temperature of the fluid is detected from the fluid temperature measuring transistor 6. The operational amplifier 7 compares the temperature of the detected semiconductor flow direction detection element 4 and the fluid, and changes the current flowing through the heat generating transistor 2 so that the temperature of the semiconductor flow direction detection element 4 is maintained at a constant temperature higher than that of the fluid. , which controls heat generation. As an output, heat generating transistor 2
Temperature measuring transistors 3a and 3c face each other with collector potential Vc and heat generating transistor 2 in between.
Three outputs are detected: a potential difference V 1 between the collectors of , and a potential difference V 2 between the collectors 3b and 3d.
第４図は流速−出力特性であり、出力は流速
Vfに対してリニアな変化を示している。流速に
比例して検出素子４から奪われる熱量は増え、一
方検出素子４を流体に対して常に一定温度高く保
つためには奪われる熱量に比例して発熱量を増や
すべく、発熱用トランジスタ２の通電量が制御さ
れる。この結果、コレクタ電位Vcの変化△Vcが
流速Vfに比例するという出力特性が得られるこ
とになる。この特性は流れ方向が変わつても変化
はなく、この特性から流速を求めることができ
る。すなわち、第１の演算手段により、vf＝ａ・
△Vcなる関係から流体の流速vfを求めることが
できる。但し、上記式のａは、素子条件と経験に
よる決まる定数である。 Figure 4 shows the flow velocity vs. output characteristics, and the output is the flow velocity.
It shows a linear change with respect to Vf. The amount of heat taken away from the detection element 4 increases in proportion to the flow velocity, and on the other hand, in order to keep the detection element 4 at a constant high temperature relative to the fluid, the heat generation transistor 2 must be increased in proportion to the amount of heat taken away. The amount of energization is controlled. As a result, an output characteristic is obtained in which the change ΔVc in the collector potential Vc is proportional to the flow velocity Vf. This characteristic does not change even if the flow direction changes, and the flow velocity can be determined from this characteristic. That is, by the first calculation means, vf=a・
The fluid flow velocity vf can be determined from the relationship △Vc. However, a in the above formula is a constant determined by device conditions and experience.
第５図は、出力V1とV2の流れ方向に対する依
存性を示したものである。角度θは、温度測定用
トランジスタ３ａと３ｃを結ぶ直線に対する流体
の流れ方向の傾きを表わしている。各各、V1＝
Acosθ、V2＝Asinθ（Ａは定数）と表わされるの
で、演算手段により、角度θはθ＝tan-1V2／V1か
ら求めることができる。即ち、第６図に示す様に
３出力を上述の第１、第２の演算手段を含む演算
回路を通すと、流速Vfと角度θが求められる。 FIG. 5 shows the dependence of the outputs V 1 and V 2 on the flow direction. The angle θ represents the inclination of the fluid flow direction with respect to the straight line connecting the temperature measuring transistors 3a and 3c. Each, V 1 =
Since A cos θ, V 2 = Asin θ (A is a constant), the angle θ can be determined from θ=tan −1 V2/V1 using the calculation means. That is, as shown in FIG. 6, when the three outputs are passed through an arithmetic circuit including the above-mentioned first and second arithmetic means, the flow velocity Vf and the angle θ are determined.
第１図は本発明の一実施例である半導体流速検
出器の構成要素である半導体流速検出素子を示す
図、第２図はこの素子をパツケージにマウントし
た状態を示す図、第３図は同実施例である半導体
流速方向検出器の回路構成図、第４図は出力
ΔVcの流速−出力特性図、第５図は出力V1とV2
の流れ方向依存特性図、第６図は信号処理法を示
す図である。
１……半導体基板、２……発熱用トランジス
タ、３ａ，３ｂ，３ｃ，３ｄ……温度測定用トラ
ンジスタ、４……半導体流速検出素子、５……パ
ツケージ、６……流体の温度測定用トランジス
タ、７……オペアンプ。
Figure 1 is a diagram showing a semiconductor flow velocity detection element which is a component of a semiconductor flow velocity detector which is an embodiment of the present invention, Figure 2 is a diagram showing this element mounted in a package, and Figure 3 is the same. A circuit configuration diagram of a semiconductor flow velocity direction detector as an example, FIG. 4 is a flow velocity-output characteristic diagram of output ΔVc, and FIG. 5 is a diagram of outputs V 1 and V 2
FIG. 6 is a diagram illustrating a signal processing method. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... Transistor for heat generation, 3a, 3b, 3c, 3d... Transistor for temperature measurement, 4... Semiconductor flow rate detection element, 5... Package, 6... Transistor for temperature measurement of fluid, 7...Op amp.
Claims (1)
この発熱用素子を中心とした基板の円周上に４個
の温度測定用素子が各々90°ずつずれて形成され
ている半導体流速検出素子と、 この半導体流速検出素子を流体の温度より一定
温度高い状態に保持する様に前記発熱用素子を発
熱させる動作を行う駆動回路と、 前記発熱用素子に流れて発熱に寄与する電流又
は該電流に対応して変化する電位あるいは電圧を
検知して得られる出力Vcの変化分から、 vf＝ａ・△Vc（ａは比例定数） なる関係を用いて前記流体の流速vfを求める第１
の演算手段と、 前記発熱用素子を挟で対向する第１の対の温度
測定用素子の間、および第２の対の温度測定用素
子の間に生じる温度差をそれぞれ電流差あるいは
電位差として検知して得られる出力V1およびV2
から、 θ＝tan-1（V2／V1） なる関係を用いて、前記半導体流速検出素子の前
記第１の対の温度測定用素子を結ぶ直線に対する
前記流体の流れ方向のなす角度θを求める第２の
演算手段と、 を有することを特徴とする半導体流速検出器。 ２ 半導体流速検出素子に形成されている発熱用
素子がトランジスタであることを特徴とする特許
請求の範囲第１項記載の半導体流速検出器。 ３ 半導体流速検出素子に形成されている温度測
定用素子がトランジスタであることを特徴とする
特許請求の範囲第１項記載の半導体流速検出器。[Claims] 1. A heating element is formed in the center of a semiconductor substrate,
A semiconductor flow velocity detection element in which four temperature measurement elements are formed on the circumference of a substrate centered on this heating element, each shifted by 90 degrees; a drive circuit that causes the heat generating element to generate heat so as to maintain the heat generating element in a high state; The first step is to calculate the flow velocity vf of the fluid using the relationship vf = a・△Vc (a is a proportionality constant) from the change in output Vc caused by the change in output Vc.
and the temperature difference occurring between the first pair of temperature measuring elements and the second pair of temperature measuring elements facing each other with the heat generating element in between, is detected as a current difference or a potential difference, respectively. The outputs V1 and V2 obtained by
Using the relationship θ=tan -1 (V2/V1), the angle θ formed by the flow direction of the fluid with respect to the straight line connecting the first pair of temperature measurement elements of the semiconductor flow rate detection element is determined. 2. A semiconductor flow velocity detector comprising: 2 calculation means; 2. The semiconductor flow velocity detector according to claim 1, wherein the heating element formed in the semiconductor flow velocity detection element is a transistor. 3. The semiconductor flow rate detector according to claim 1, wherein the temperature measuring element formed in the semiconductor flow rate detection element is a transistor.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59103030A JPS60247171A (en) | 1984-05-22 | 1984-05-22 | Semiconductive flow speed detector |
| US06/733,796 US4637253A (en) | 1984-05-22 | 1985-05-14 | Semiconductor flow detector for detecting the flow rate and flowing direction of fluid |
| DE19853518409 DE3518409A1 (en) | 1984-05-22 | 1985-05-22 | SEMICONDUCTOR FLOW METER FOR DETERMINING FLOW AMOUNT AND DIRECTION OF A FLOW MEDIUM |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59103030A JPS60247171A (en) | 1984-05-22 | 1984-05-22 | Semiconductive flow speed detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60247171A JPS60247171A (en) | 1985-12-06 |
| JPH0334827B2 true JPH0334827B2 (en) | 1991-05-24 |
Family
ID=14343250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59103030A Granted JPS60247171A (en) | 1984-05-22 | 1984-05-22 | Semiconductive flow speed detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60247171A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016011948A (en) * | 2014-06-03 | 2016-01-21 | 株式会社デンソー | Anemometer, wind direction meter and moving direction meter |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006319153A (en) * | 2005-05-13 | 2006-11-24 | Sony Corp | Semiconductor integrated circuit and control method thereof |
| RU178345U1 (en) * | 2017-07-31 | 2018-03-30 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Башкирский государственный университет" | LATERAL FLOW DETERMINATION DEVICE AND FLOW DIRECTION DIRECTION |
| RU177768U1 (en) * | 2017-07-31 | 2018-03-12 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Башкирский государственный университет" | SIDE FLOW SENSOR AND FLOW DIRECTIONS IN A WELL |
| JP2020016465A (en) * | 2018-07-23 | 2020-01-30 | ミネベアミツミ株式会社 | Fluid sensor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5343574A (en) * | 1976-10-01 | 1978-04-19 | Rion Co | Thermal flow meter |
| JPS55103466A (en) * | 1979-02-01 | 1980-08-07 | Nippon Denso Co Ltd | Semiconductor device for flow speed electric conversion |
| JPS56143915A (en) * | 1980-04-11 | 1981-11-10 | Nippon Soken Inc | Measuring device for gas flow rate |
-
1984
- 1984-05-22 JP JP59103030A patent/JPS60247171A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016011948A (en) * | 2014-06-03 | 2016-01-21 | 株式会社デンソー | Anemometer, wind direction meter and moving direction meter |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60247171A (en) | 1985-12-06 |
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