JPH0336799B2 - - Google Patents
Info
- Publication number
- JPH0336799B2 JPH0336799B2 JP1139286A JP1139286A JPH0336799B2 JP H0336799 B2 JPH0336799 B2 JP H0336799B2 JP 1139286 A JP1139286 A JP 1139286A JP 1139286 A JP1139286 A JP 1139286A JP H0336799 B2 JPH0336799 B2 JP H0336799B2
- Authority
- JP
- Japan
- Prior art keywords
- beryl
- sio
- single crystals
- crystals
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 239000013078 crystal Substances 0.000 claims description 65
- 229910052614 beryl Inorganic materials 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 14
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 13
- 239000007864 aqueous solution Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910013553 LiNO Inorganic materials 0.000 claims description 5
- 229910002651 NO3 Inorganic materials 0.000 claims description 4
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 4
- 229910001963 alkali metal nitrate Inorganic materials 0.000 claims description 4
- 239000002994 raw material Substances 0.000 description 13
- 239000002904 solvent Substances 0.000 description 12
- 238000007716 flux method Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 229910018626 Al(OH) Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- NJJFVOQXYCEZLO-UHFFFAOYSA-N dialuminum;triberyllium;dioxido(oxo)silane Chemical group [Be+2].[Be+2].[Be+2].[Al+3].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O NJJFVOQXYCEZLO-UHFFFAOYSA-N 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 241000579895 Chlorostilbon Species 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010437 gem Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- -1 HCl Chemical class 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004933 hydrothermal crystal growth Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
≪産業上の利用分野≫
本発明は、現在は装飾用の合成宝石として広く
用いられ、また将来レーザー光学分野の重要な結
晶として期待されるベリル単結晶（Crイオンを
ドープした結晶はエメラルド）の品質の改良方法
に関わるものである。[Detailed Description of the Invention] <<Industrial Application Field>> The present invention is directed to beryl single crystals (Cr ion-containing Doped crystals are related to methods for improving the quality of emeralds.
≪発明の概要≫
本発明は、溶媒としてアルカリ金属の硝酸塩水
溶液、さらに具体的にいえばNaNNO3水溶液、
KNO3水溶液、LiNO3水溶液を用い所定の温度、
圧力を与え種結晶上に結晶を育成する水熱合成法
により工業的に利用できる品質のベリル単結晶を
育成できるベリル単結晶の新しい製造方法を提供
するものである。<<Summary of the invention>> The present invention uses an aqueous alkali metal nitrate solution as a solvent, more specifically, an aqueous solution of NaNNO3 ,
Using KNO 3 aqueous solution and LiNO 3 aqueous solution at a specified temperature,
The present invention provides a new method for producing beryl single crystals that can grow industrially usable quality beryl single crystals using a hydrothermal synthesis method in which crystals are grown on seed crystals by applying pressure.
≪従来の技術≫
従来、ベリル単結晶を人間の手で合成しようと
いう試みは様々な手法により、主に合成宝石を目
指したCrイオンをドープしたエメラルドの分野
において、行なわれてきた。<<Prior Art>> Conventionally, attempts to synthesize beryl single crystals by human hands have been made using various methods, mainly in the field of Cr ion-doped emeralds aimed at synthetic gemstones.
このための主たる方法はフラツクス法と水熱合
成法である。 The main methods for this purpose are flux method and hydrothermal synthesis method.
フラツクス法においてはLi2O、MoO3などの混
合物をフラツクスとして用い、原料としての
Al2O3、BeO、SiO2を1000℃付近の高温にて溶融
したフラツクスに溶かしこみ、温度差をつけるあ
るいは徐冷するといつた操作によりベリル単結晶
Be3Al2（SiO3）6を製造している。 In the flux method, a mixture of Li 2 O, MoO 3 , etc. is used as a flux, and
Beryl single crystals are produced by melting Al 2 O 3 , BeO, and SiO 2 into a flux molten at a high temperature of around 1000°C, and then creating a temperature difference or slowly cooling it.
It manufactures Be 3 Al 2 (SiO 3 ) 6 .
一方、水熱合成法においてはHCl、HF、
NH3Fといつた酸性水溶液が主に用いられ、原料
としてAl（OH）3、Be（OH）2、SiO2を500℃、
1000Kg／cm2付近の雰囲気で水溶液に溶かしこみ、
温度差をつけ若干低温にした種結晶上にベリル単
結晶を育成するといつた操作によりベリル単結晶
Be3Al2（SiO3）6を製造している。 On the other hand, in the hydrothermal synthesis method, HCl, HF,
Acidic aqueous solutions such as NH 3 F are mainly used, and the raw materials are Al(OH) 3 , Be(OH) 2 , and SiO 2 at 500°C.
Dissolve it in an aqueous solution in an atmosphere of around 1000Kg/ cm2 ,
A beryl single crystal is grown by growing a beryl single crystal on a seed crystal that has been kept at a slightly lower temperature with a temperature difference.
It manufactures Be 3 Al 2 (SiO 3 ) 6 .
この技術については以下の文献に詳しく述べら
れている。 This technique is described in detail in the following literature.
クルト ナツソウ ジエムス メイド バイマ
ン （1980 チルトン ブツク カンパニイラド
ナー ペンシルバニア） 125−158 （Kurt
Nassau，ph.D.GEMS MADE BY MAN
（1980Chilton Book Company Radnor，
Pennsylvania）125−158）
≪発明が解決しようとする問題点≫
従来技術、まずフラツクス法について述べれ
ば、単結晶の内部に欠陥が多い特にインクルージ
ヨンが多いことが問題となる。フラツクス法の場
合1000℃付近の高温の溶融したフラツクスより単
結晶が合成されるためフラツクスをまきこみ、イ
ンクルージヨンとして内部欠陥となる。これはフ
ラツクス法には不可避の欠点である。一方、水熱
合成法はフラツクス法と比較して溶媒は低粘度の
水溶液であり合成温度も500℃前後と低くインク
ルージヨンあるいは熱による内部歪が発生する程
度も低くより欠陥の少い高品質のベリル単結晶を
製造できる方法である。 Kurt Natsou James Maid Byman (1980 Chilton Book Company Iradner Pennsylvania) 125-158 (Kurt
Nassau, ph.D.GEMS MADE BY MAN
(1980 Chilton Book Company Radnor,
(Pennsylvania) 125-158) <<Problems to be Solved by the Invention>> Regarding the prior art, first of all, referring to the flux method, the problem is that there are many defects, particularly inclusions, inside the single crystal. In the flux method, a single crystal is synthesized from molten flux at a high temperature of around 1000°C, so the flux is injected into the crystal and becomes internal defects as inclusions. This is an unavoidable drawback of the flux method. On the other hand, in the hydrothermal synthesis method, compared to the flux method, the solvent is a low-viscosity aqueous solution, and the synthesis temperature is around 500℃, which means that inclusions or internal distortion due to heat are less likely to occur, resulting in high quality products with fewer defects. This is a method that can produce beryl single crystals.
次に従来技術、水熱合成法によるベリル単結晶
の製造方法について述べれば、高品質の単結晶が
育成できるという大きな利点があるものの、溶媒
が強酸を用いる極めて腐食性の大きい雰囲気であ
るという大きな問題点がある。過去の実験例にお
いては現在人工水晶を工業的製造しているのと同
様なNaOH、Na2CO3などを使用したアルカリ雰
囲気でのベリル単結晶の育成も試みられているが
溶解度が十分でなく工業的には成功していない。
工業的レベルのベリル単結晶の製造方法としては
上記のようなHCl、HF、NH4Fといつた極めて
腐食性の強い酸を使用している。従つてこの酸に
耐えることのできるオートクレーブの材質はな
く、所定の温度、圧力に耐えることのできる特殊
鋼の容器に白金あるいは金といつた貴金属を内張
し上記強酸の腐食性を回避するしか方法がないの
が現状である。この高価な貴金属を多用するとい
つたことは、当然、装置の複雑化、高価格化につ
ながり、大型結晶を得ることが難かしいまた価格
が高価になるなど、ベリル単結晶を工業化する場
合の極めて大きな欠点となつていた。 Next, let's talk about the conventional technology for producing beryl single crystals using hydrothermal synthesis. Although it has the great advantage of being able to grow high-quality single crystals, it also has the major advantage of using a strong acid as a solvent in an extremely corrosive atmosphere. There is a problem. In past experiments, attempts have been made to grow beryl single crystals in an alkaline atmosphere using NaOH, Na 2 CO 3 , etc., which is the same as that used in the industrial production of artificial quartz crystals today, but the solubility was insufficient. It has not been an industrial success.
The method for manufacturing beryl single crystals at an industrial level uses highly corrosive acids such as HCl, HF, and NH 4 F as described above. Therefore, there is no material for an autoclave that can withstand this acid, and the only way to avoid the corrosive nature of the strong acid is to line it with a precious metal such as platinum or gold in a special steel container that can withstand the specified temperature and pressure. The current situation is that there is no way. The heavy use of this expensive precious metal naturally leads to complicated and expensive equipment, making it difficult to obtain large crystals and making it expensive, making it extremely difficult to industrialize beryl single crystals. This was a major drawback.
≪問題点を解決するための手段≫
水熱合成法によるベリル単結晶の製造をより工
業レベルに近づけるためには、まず溶媒となる溶
液の選択が重要である。この溶液のもつ条件とし
てはベリル単結晶Be3Al2（SiO3）6に対してHClと
同程度の溶解度をもち、かつ容器に対して腐食性
の少いものが望ましい。<<Means for Solving the Problems>> In order to bring the production of beryl single crystals by hydrothermal synthesis closer to an industrial level, it is first important to select a solution to serve as a solvent. This solution preferably has a solubility in beryl single crystal Be 3 Al 2 (SiO 3 ) 6 comparable to that of HCl, and is less corrosive to the container.
上記の条件に適合するものとして本発明ではア
ルカリ金属の硝酸塩水溶液が溶媒として最適であ
ることを見い出した。 In the present invention, it has been found that an aqueous solution of alkali metal nitrate is optimal as a solvent that meets the above conditions.
≪作用≫
アルカリ金属の硝酸塩水溶液は今までベリル単
結晶の製造での水熱合成法の溶媒としての使用例
は報告されておらず従来のNaOH、Na2CO3ある
いはHClといつた溶媒と同様な機構で溶媒の効果
をもつのかどうかは理論的に解明されていない。
しかし実施例からみて理想的溶媒としての作用を
有する。≪Operation≫ Until now, there have been no reports of the use of an aqueous alkali metal nitrate solution as a solvent for hydrothermal synthesis in the production of beryl single crystals, and it is similar to conventional solvents such as NaOH, Na 2 CO 3 or HCl. It has not been theoretically elucidated whether the solvent has an effect through a specific mechanism.
However, in view of the examples, it acts as an ideal solvent.
以下、実施例にもとづいて詳しく説明する。 Hereinafter, a detailed explanation will be given based on examples.
≪実施例≫
原料、種結晶の調整
原料は市販の高純度試薬のAl（OH）3、Be
（OH）2、SiO2を使用する。また種結晶としては
天然のベリル単結晶の欠陥の少いものを選びＣ軸
から45゜の角度で切断した板状のものを種結晶と
して使用する。≪Example≫ Preparation of raw materials and seed crystals The raw materials are commercially available high-purity reagents Al(OH) 3 and Be
(OH) 2 , using SiO 2 . As a seed crystal, a natural beryl single crystal with few defects is selected, and a plate-shaped one cut at an angle of 45 degrees from the C axis is used as a seed crystal.
装置、構成
第１図に圧力容器の構造を模式的に表す断面図
を示す。オートクレーブ本体１はシールリング２
を介してカバー３により圧力シールされている。
以上の構成においてオートクレーブ本体１の下部
に下部育成用原料４を設置する。下部育成用原料
４はAl（OH）3およびBe（OH）2よりなる。次に種
結晶支持枠５を介して種結晶６を設置する。また
同様に種結晶支持枠５を介してバツフル板７を下
部育成原料４と種結晶６の間に設定する。さいご
にSiO2よりなる上部育成用原料８を種結晶６の
上部に設置する。 Apparatus, Configuration Figure 1 is a cross-sectional view schematically showing the structure of a pressure vessel. Autoclave body 1 has seal ring 2
The cover 3 is pressure-sealed via the cover 3.
In the above configuration, the raw material 4 for growing the lower part is installed in the lower part of the autoclave main body 1. The raw material 4 for growing the lower part consists of Al(OH) 3 and Be(OH) 2 . Next, a seed crystal 6 is installed via the seed crystal support frame 5. Similarly, a baffle plate 7 is set between the lower growth raw material 4 and the seed crystal 6 via the seed crystal support frame 5. Finally, an upper growth material 8 made of SiO 2 is placed on top of the seed crystal 6.
この場合、原料Al（OH）3、Be（OH）2、SiO2は
それぞれベリルBe3Al2（SiO3）6の組成となるよう
にあらかじめ秤量されている。またSiO2のみ上
部に設置されているのは、各原料の比重、溶解
度、拡散などの違いよりオートクレーブ内の対流
がベリル単結晶の育成に最適になるように実験的
に得られた結果にもとづく。 In this case, the raw materials Al(OH) 3 , Be(OH) 2 , and SiO 2 are each weighed in advance so as to have a composition of beryl Be 3 Al 2 (SiO 3 ) 6 . Furthermore, the reason why only SiO 2 is installed at the top is based on experimental results that the convection inside the autoclave is optimal for growing beryl single crystals due to differences in specific gravity, solubility, diffusion, etc. of each raw material. .
水熱合成処理
以上の構成の圧力容器において内部に硝酸塩水
溶液を所定の温度で所定の圧力が得られるような
充填率で充填し、適当な期間、水熱合成、結晶育
成処理を行う。 Hydrothermal Synthesis Treatment In the pressure vessel configured as described above, an aqueous nitrate solution is filled inside at a filling rate such that a predetermined pressure can be obtained at a predetermined temperature, and hydrothermal synthesis and crystal growth treatment are performed for an appropriate period of time.
以下具体的実施例を説明する。 Specific examples will be described below.
第１の実施例
種結晶６の温度…370℃
下部育成用原料４の温度…390℃
溶媒…３モルLiNO3水溶液
圧力…800Kg／cm2
育成期間…30日
この結果、種結晶６の上にベリル単結晶
Be3Al2（SiO3）6単結晶が育成された。以下にその
結果、性質を示す。First Example Temperature of seed crystal 6: 370°C Temperature of lower growth raw material 4: 390°C Solvent: 3 mol LiNO 3 aqueous solution Pressure: 800 Kg/cm 2 Growth period: 30 days As a result, on top of seed crystal 6 beryl single crystal
A Be 3 Al 2 (SiO 3 ) 6 single crystal was grown. The results and properties are shown below.
成長した層の最大厚み（片側）…４mm
成長した層の性質…Be3Al2（SiO3）6単結晶（Ｘ
線回析により同定）、物性は天然ベリル単結晶と
同等（成長層を切り出し、密度、屈折率などを測
定）、成長層にインクルージヨンは認められなか
つたが、若干のマイクロクラツクの発生が認めら
れた。 Maximum thickness of the grown layer (one side)...4 mm Properties of the grown layer...Be 3 Al 2 (SiO 3 ) 6 single crystal (X
(Identified by line diffraction), the physical properties are equivalent to natural beryl single crystals (the grown layer was cut out and density, refractive index, etc. were measured), and although no inclusions were observed in the grown layer, there were some microcracks. Admitted.
第２の実施例
種結晶６の温度…380℃
下部育成用原料４の温度…400℃
溶媒…３モルKNO3の水溶液
圧力…800Kg／cm2
育成期間…30日
この結果、種結晶６の上にベリル単結晶
Be3Al2（SiO3）6単結晶が育成された。以下にその
結果、性質を示す。Second Example Temperature of seed crystal 6: 380°C Temperature of lower growing raw material 4: 400°C Solvent: 3 mol KNO 3 aqueous solution pressure: 800 Kg/cm 2 Growth period: 30 days As a result, the upper part of seed crystal 6 beryl single crystal
A Be 3 Al 2 (SiO 3 ) 6 single crystal was grown. The results and properties are shown below.
成長した層の最大厚み（片側）…３mm
成長した層の性質…Be3Al2（SiO3）6単結晶（Ｘ線
回析により固定）、物性は天然ベリル単結晶と
同等（成長層を切り出し、密度、屈折率などを
測定）、成長層にインクルージヨンは認められ
なかつたが、若干のマイクロクラツクが認めら
れた。このマイクロクラツクはLiNO3を用い
た第１の実施例よりは少い。Maximum thickness of the grown layer (one side)...3mm Properties of the grown layer...Be 3 Al 2 (SiO 3 ) 6 single crystal (fixed by X-ray diffraction), physical properties are equivalent to natural beryl single crystal (the grown layer is cut out , density, refractive index, etc.), no inclusions were observed in the grown layer, but some microcracks were observed. The microcracks are less than in the first embodiment using LiNO 3 .
第３の実施例
種結晶６の温度…390℃
下部育成用原料４の温度…410℃
溶媒…３モルNaNO3水溶液
圧力…800Kg／cm2
育成期間…30日
この結果、種結晶６の上にベリル単結晶
Be3Al2（SiO3）6単結晶が合成された。以下にその
結果、性質を示す。Third Example Temperature of seed crystal 6: 390°C Temperature of lower growing raw material 4: 410°C Solvent: 3 mol NaNO 3 aqueous solution Pressure: 800 Kg/cm 2 Growth period: 30 days As a result, on top of seed crystal 6 beryl single crystal
A Be 3 Al 2 (SiO 3 ) 6 single crystal was synthesized. The results and properties are shown below.
成長した層の最大厚み（片側）…4.5mm
成長した層の性質…Be3Al2（SiO3）6単結晶（Ｘ線
回析により固定）、物性は天然ベリル単結晶と
同等（成長装置を切り出し、密度、屈折率など
を測定）、成長層にインクルージヨンは認めら
れなかつた。又マイクロクラツクについてもほ
とんどその発生は認められなかつた。Maximum thickness of the grown layer (one side)...4.5mm Properties of the grown layer...Be 3 Al 2 (SiO 3 ) 6 single crystal (fixed by X-ray diffraction), physical properties are equivalent to natural beryl single crystal (the growth equipment No inclusions were observed in the grown layer. Furthermore, almost no occurrence of microcracks was observed.
上記の第１から第３の実施例において育成され
たベリル単結晶は従来のフラツクス法で育成され
たものと比較してインクルージヨンにおいて、は
るかに優れた特性をもつ、また従来の水熱法のも
のと比較しても、インクルージヨン、物性におい
て同等以上、マイクロクラツクにおいてより優れ
ていることが認められる。また圧力容器への腐食
性については、通常の特殊鋼で製造された圧力容
器において第１の実施例LiNO3の場合若干の腐
食作用が認められたが、第２、第３実施例の場合
まつたく認められなかつた。 The beryl single crystals grown in the first to third embodiments described above have far superior properties in terms of inclusions compared to those grown by the conventional flux method, and also by the conventional hydrothermal method. Even when compared with other materials, it is recognized that the inclusions and physical properties are the same or better, and the microcracks are superior. Regarding the corrosivity to pressure vessels, in the case of LiNO 3 of the first example, some corrosive effect was observed in pressure vessels made of ordinary special steel, but in the case of the second and third examples, there was no corrosion. It wasn't really recognized.
≪発明の効果≫
以上詳述したように本発明は以下の大きな効果
をもつ。<<Effects of the Invention>> As detailed above, the present invention has the following major effects.
(1) 従来のフラツクス法、あるいは強酸を使用し
た水熱合成法により育成されたベリル単結晶と
同等あるいはそれ以上の品質のベリル単結晶を
得ることができる。(1) It is possible to obtain beryl single crystals of quality equal to or higher than beryl single crystals grown by conventional flux methods or hydrothermal synthesis methods using strong acids.
(2) 従来の強酸を使用した水熱合成法と比較して
その製造工程上、圧力容器への腐食性がほとん
どないことより従来の人工水晶製造に使用され
ている圧力容器と同等のものが使用でき、その
工業化は極めて容易である。(2) Compared to the conventional hydrothermal synthesis method using strong acids, the manufacturing process is almost non-corrosive to the pressure vessel, so it is possible to use a pressure vessel equivalent to that used for conventional artificial quartz production. can be used, and its industrialization is extremely easy.
なお、本発明の場合、ベリル単結晶を合成した
が、Crイオンをドープしてエメラルドを育成す
る、またNdイオンなどの希土類元素をドープし
た単結晶を合成するなど、特定元素をドープした
ベリル単結晶の合成にも適用できることは勿論で
ある。 In the case of the present invention, beryl single crystals were synthesized, but beryl single crystals doped with specific elements can also be synthesized, such as by doping Cr ions to grow emeralds or by synthesizing single crystals doped with rare earth elements such as Nd ions. Of course, it can also be applied to the synthesis of crystals.
本発明は、将来レーザー光学分野に重要なベリ
ル単結晶を容易に製造できる方法を提供するもの
でありその工業的効果は極めて大きい。 The present invention provides a method for easily producing beryl single crystals, which will be important in the field of laser optics in the future, and has extremely large industrial effects.
図は圧力容器の構造を表す断面図である。
１……オートクレーブ本体、２……シールリン
グ、３……カバー、４……下部育成用原料、５…
…種結晶支持枠、６……種結晶、７……バツフル
板、８……上部育成用原料。
The figure is a sectional view showing the structure of a pressure vessel. 1...Autoclave body, 2...Seal ring, 3...Cover, 4...Raw material for growing the lower part, 5...
...Seed crystal support frame, 6...Seed crystal, 7...Bathful plate, 8...Raw material for upper growth.
Claims (1)
中で所定の温度、圧力を与える水熱合成法によつ
てベリル単結晶を育成したことを特徴とするベリ
ル単結晶の製造方法。 ２ 硝酸塩としてNaNO3である特許請求の範囲
第１項記載の製造方法。 ３ 硝酸塩としてKNO3である特許請求の範囲第
１項記載の製造方法。 ４ 硝酸塩としてLiNO3である特許請求の範囲
第１項記載の製造方法。[Claims] 1. A method for producing a beryl single crystal, characterized in that the beryl single crystal is grown by a hydrothermal synthesis method in which a predetermined temperature and pressure are applied in an aqueous solution containing an alkali metal nitrate as a main component. . 2. The manufacturing method according to claim 1, wherein the nitrate is NaNO 3 . 3. The manufacturing method according to claim 1, wherein the nitrate is KNO 3 . 4. The manufacturing method according to claim 1, wherein the nitrate is LiNO 3 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1139286A JPS62171996A (en) | 1986-01-22 | 1986-01-22 | Production of beryl single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1139286A JPS62171996A (en) | 1986-01-22 | 1986-01-22 | Production of beryl single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62171996A JPS62171996A (en) | 1987-07-28 |
| JPH0336799B2 true JPH0336799B2 (en) | 1991-06-03 |
Family
ID=11776736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1139286A Granted JPS62171996A (en) | 1986-01-22 | 1986-01-22 | Production of beryl single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62171996A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3899725B2 (en) * | 1998-09-30 | 2007-03-28 | 株式会社Ｓｕｍｃｏ | Defect removal method for single crystal |
-
1986
- 1986-01-22 JP JP1139286A patent/JPS62171996A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62171996A (en) | 1987-07-28 |
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