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JPH0339579B2 - - Google Patents
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JPH0339579B2 - - Google Patents

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Publication number
JPH0339579B2
JPH0339579B2 JP19178383A JP19178383A JPH0339579B2 JP H0339579 B2 JPH0339579 B2 JP H0339579B2 JP 19178383 A JP19178383 A JP 19178383A JP 19178383 A JP19178383 A JP 19178383A JP H0339579 B2 JPH0339579 B2 JP H0339579B2
Authority
JP
Japan
Prior art keywords
light
gas
wavelength
hydrogen
solid compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19178383A
Other languages
Japanese (ja)
Other versions
JPS6082946A (en
Inventor
Kentaro Ito
Tetsuya Kubo
Yukio Yamauchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hochiki Corp
Original Assignee
Hochiki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hochiki Corp filed Critical Hochiki Corp
Priority to JP19178383A priority Critical patent/JPS6082946A/en
Publication of JPS6082946A publication Critical patent/JPS6082946A/en
Publication of JPH0339579B2 publication Critical patent/JPH0339579B2/ja
Granted legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/78Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
    • G01N21/783Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour for analysing gases

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)

Description

【発明の詳細な説明】 本発明は、触媒金属中に吸着解離した水素原子
により還元される固体化合物の光吸収率の変化を
光学的に検出して水素ガスまたは含水素化合物ガ
スを検知するようにしたガスセンサに関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for detecting hydrogen gas or hydrogen-containing compound gas by optically detecting a change in the light absorption rate of a solid compound reduced by hydrogen atoms adsorbed and dissociated in a catalyst metal. related to gas sensors.

従来、この種のガスセンサとしては、接触燃焼
式もしくは半導体式のものが主流であつたが、い
ずれもヒータ等により加熱した状態で使用され、
安全性の点で問題があり、更に検知素子を加熱し
ているため劣化が早く、特性も不安定で信頼性が
充分でなかつた。
Conventionally, this type of gas sensor has been mainly catalytic combustion type or semiconductor type, but both are used after being heated with a heater etc.
There were problems in terms of safety, and since the sensing element was heated, it deteriorated quickly, and its characteristics were unstable, making it insufficiently reliable.

そこで、本願発明者等は、水素または含水素化
合物ガスを吸着解離する触媒金属と、この金属中
に生成した水素原子により還元されて光吸収率が
変化する固体化合物、例えば3酸化タングステン
WO3との積層構造をもつ検知素子を開発し、固
体化合物の光吸収率の変化を光学的に検出してガ
ス濃度を知るようにしたガスセンサを提案してい
る(特願昭58−147749号)。
Therefore, the inventors of the present application developed a catalyst metal that adsorbs and dissociates hydrogen or hydrogen-containing compound gas, and a solid compound, such as tungsten trioxide, whose light absorption rate changes when reduced by the hydrogen atoms generated in the metal.
We developed a sensing element with a laminated structure with WO 3 and proposed a gas sensor that can detect gas concentration by optically detecting changes in the light absorption rate of solid compounds (Japanese Patent Application No. 147749/1983). ).

ところで、各種の実験を繰り返したところ触媒
金属と固体化合物の積層構造をもつ素子の光吸収
特性は、素子の経時変化や検出したいガス以外の
雑ガス、例えば水蒸気やアルコール等により影響
を受け、ガス検出性能が低下する恐れがあつた。
By the way, after repeating various experiments, we found that the light absorption characteristics of an element with a layered structure of catalyst metal and solid compound are affected by changes in the element over time and by miscellaneous gases other than the gas to be detected, such as water vapor and alcohol. There was a risk that detection performance would deteriorate.

本発明は、このような問題点に鑑みてなされた
もので、経時変化や雑ガスにより影響されること
なく水素ガスまたは含水素化合物ガスを検知する
ことのできる安定性および信頼性の高いガスセン
サを提供することを目的とする。
The present invention was made in view of these problems, and provides a highly stable and reliable gas sensor that can detect hydrogen gas or hydrogen-containing compound gas without being affected by changes over time or miscellaneous gases. The purpose is to provide.

この目的を達成するため本発明は、水素または
含水素化合物ガスを吸着解離する金属と該金属中
に生成された水素原子による還元で光吸収率が変
化する固体化合物との積層構造を備えた素子を使
用し、固体化合物の還元により大きな光吸収変化
が生じる波長の光を第1の検出部で検出すると共
に、固体化合物の還元で光吸収変化が生じないか
又は小さい波長の光を第2の検出部で監視し、第
1の検出部の検出信号と第2の検出部の検出信号
により水素または含水素化合物ガスの有無を判別
するようにしたものである。
To achieve this object, the present invention provides an element having a laminated structure of a metal that adsorbs and dissociates hydrogen or hydrogen-containing compound gas and a solid compound whose light absorption rate changes due to reduction by hydrogen atoms generated in the metal. The first detection unit detects light with a wavelength that causes a large change in optical absorption due to the reduction of the solid compound, and the second detection unit detects light with a wavelength that causes no or small change in optical absorption due to the reduction of the solid compound. The detection unit monitors the gas, and the presence or absence of hydrogen or hydrogen-containing compound gas is determined based on the detection signal of the first detection unit and the detection signal of the second detection unit.

以下、本発明の実施例を図面に基づいて説明す
る。
Embodiments of the present invention will be described below based on the drawings.

第1図は本発明の一実施例を示した説明図であ
る。
FIG. 1 is an explanatory diagram showing an embodiment of the present invention.

まず構成を説明すると、1は水素ガスまたは含
水素化合物ガス、例えばアンモニアガスNH3
硫化水素ガスH2S、シランガスSiH4等が接触し
たときに特定波長λsで光吸収変化を生ずる素子
であり、素子1は水素ガスまたは含水素ガスを吸
着解離する触媒金属2と触媒金属2中の水素原子
により還元されて特定波長λsで光吸収変化を生
ずる固体化合物3との積層構造を有する。
First, to explain the configuration, 1 is hydrogen gas or hydrogen-containing compound gas, such as ammonia gas NH 3 ,
This is an element that causes a change in light absorption at a specific wavelength λs when hydrogen sulfide gas H 2 S, silane gas SiH 4 , etc. come into contact with each other. It has a layered structure with a solid compound 3 that is reduced by hydrogen atoms to cause a change in light absorption at a specific wavelength λs.

ここで、素子1の触媒金属2としてはパラジウ
ムPdが用いられ、また固体化合物3としては3
酸化タングステンWO3が用いられる。
Here, palladium Pd is used as the catalyst metal 2 of the element 1, and 3 is used as the solid compound 3.
Tungsten oxide WO 3 is used.

この触媒金属2と固体化合物3の積層構造でな
る素子1の製造は、透明なガラス基板の上にWO
でなる固体化合物3を所定の厚さに蒸着し、続い
て固体化合物3の上にPdでなる触媒金属2を透
明性を保つ程度に薄く蒸着することで作り出すこ
とができる。
The device 1, which has a laminated structure of the catalyst metal 2 and the solid compound 3, is manufactured by placing the WO
It can be produced by vapor-depositing a solid compound 3 consisting of Pd to a predetermined thickness, and then vapor-depositing a catalyst metal 2 consisting of Pd on the solid compound 3 thinly enough to maintain transparency.

この第1図に示す本発明で使用する素子1は、
水素ガスまたは含水素化合物ガスの接触に対し次
のようにして光吸収作用をもつ。
The element 1 used in the present invention shown in FIG.
It has a light absorption effect in the following way when it comes into contact with hydrogen gas or hydrogen-containing compound gas.

即ち、例えば水素ガスが接触すると、触媒金属
2により水素が吸着解離して水素原子を触媒金属
2中に生成し、この水素原子が固体化合物3の中
に注入される。触媒金属2によるプロトンH+
注入を受けた固体化合物3は還元されて色中心密
度が変化し、特定の光波長λsで光吸収変化を生
ずる。固体化合物3に上記の実施例のように
WO3を使用したときには、水素ガスの接触で固
体化合物3は光吸収を増大させ、第2のグラフに
示す変化を生ずる。第2図は水素ガスの接触がな
いときの波長に対する透過率を実線で、また水素
ガスが接触したときの透過率を破線で示してお
り、WO3を固体化合物3として使用したときに
はλs=1.4μm付近で最大となる光吸収変化を生ず
る。
That is, for example, when hydrogen gas comes into contact, hydrogen is adsorbed and dissociated by the catalyst metal 2 to generate hydrogen atoms in the catalyst metal 2, and these hydrogen atoms are injected into the solid compound 3. The solid compound 3 into which protons H + have been injected by the catalyst metal 2 is reduced and its color center density changes, causing a change in light absorption at a specific light wavelength λs. Solid compound 3 as in the example above
When WO 3 is used, solid compound 3 increases its light absorption upon contact with hydrogen gas, producing the changes shown in the second graph. In Figure 2, the solid line shows the transmittance for the wavelength when there is no contact with hydrogen gas, and the broken line shows the transmittance when there is contact with hydrogen gas, and when WO 3 is used as the solid compound 3, λs = 1.4 The maximum light absorption change occurs near μm.

再び第1図を参照するに、4,5は発光ダイオ
ード等を用いた光源であり、電源30により継続
的または間欠的に発光駆動される。光源4は水素
ガスまたは含水素化合物ガスの接触で大きな光変
化の生じる波長λs、即ち第2図のグラフに示す
λs=1.4μmを中心としたエネルギースペクトラム
となる光を発光する発光特性をもつ。また光源5
は素子1において水素ガスまたは含水素化合物ガ
スが接触してもほとんど光吸収変化が生じない波
長λr、例えば第2図のλr=1.0μmを中心波長とし
たエネルギースペクトラムをもつ光を発光する特
性をもつ。
Referring again to FIG. 1, reference numerals 4 and 5 indicate light sources using light emitting diodes or the like, which are driven to emit light continuously or intermittently by a power source 30. The light source 4 has a light emitting characteristic that emits light having an energy spectrum centered at a wavelength λs at which a large optical change occurs upon contact with hydrogen gas or a hydrogen-containing compound gas, that is, λs = 1.4 μm as shown in the graph of FIG. Also, light source 5
Element 1 has the characteristic of emitting light with an energy spectrum centered at a wavelength λr that causes almost no change in optical absorption even when it comes into contact with hydrogen gas or hydrogen-containing compound gas, for example, λr = 1.0 μm in Figure 2. Motsu.

6,7はフオトダイオード等を用いた受光部で
あり、受光部6は光源4より素子1を介して与え
られる波長λsの光を受光して電気信号に変換し、
また受光部7は光源5より素子1を介して与えら
れる波長λrの光を受光して電気信号に変換する。
このため、受光部6としては少なくとも波長λs
を含む受光特性をもち、また受光部7としては少
なくとも波長λrを含む受光特性をもつことにな
る。
6 and 7 are light receiving sections using photodiodes or the like, and the light receiving section 6 receives light of wavelength λs given from the light source 4 via the element 1, and converts it into an electrical signal.
Further, the light receiving section 7 receives light of wavelength λr given from the light source 5 via the element 1, and converts it into an electrical signal.
Therefore, the light receiving section 6 has at least the wavelength λs.
In addition, the light receiving section 7 has light receiving characteristics including at least the wavelength λr.

尚、光源4,5としては、それぞれ波長λsお
よびλrを含む波長帯域の発光特性をもつものを
使用した場合には、受光部6,7に光吸収変化の
大きい波長λsと光吸収変化の小さい波長λrを選
択的に受光出力する特性のものを使用すればよ
い。更に、光源4,5およびまたは受光部6,7
の波長特性を得るためには、波長λsまたはλrを
通過するフイルターを使用するようにしてもよ
い。
In addition, when using light sources 4 and 5 that have emission characteristics in a wavelength band that includes wavelengths λs and λr, respectively, the light receiving sections 6 and 7 are provided with wavelengths λs that have a large light absorption change and wavelengths λs that have a small light absorption change. It is sufficient to use one having a characteristic of selectively receiving and outputting wavelength λr. Furthermore, the light sources 4, 5 and/or the light receiving sections 6, 7
In order to obtain wavelength characteristics of , a filter that passes the wavelength λs or λr may be used.

8は判別部であり、受光部6,7よりの受光信
号E1,E2を入力し、例えば水素ガスの接触に
よる透過率の変化分に応じた検出信号をEsとす
ると、E1とE2の比又はそれらの差分の比、即
ち Es=E1/E2 又は Es=(E2−E1)/E2 を演算し、前者の場合には検出信号Esが予め定
めたガス濃度を与える閾値以下となつたとき、後
者の場合にはEsが予め定めた閾値以上となつた
とき、ガス検出を示す判別出力を生ずる。
Reference numeral 8 denotes a discriminator, which inputs the light reception signals E1 and E2 from the light receivers 6 and 7. For example, if Es is the detection signal corresponding to the change in transmittance due to contact with hydrogen gas, then the ratio of E1 and E2 or The ratio of their difference, that is, Es=E1/E2 or Es=(E2-E1)/E2, is calculated. In the former case, when the detection signal Es becomes less than the threshold value that gives a predetermined gas concentration, the latter In this case, when Es exceeds a predetermined threshold value, a determination output indicating gas detection is generated.

尚、第1図の実施例において、光源4,5、素
子1および受光部6,7は、外部より空気の流入
が可能なセンサ筐体9内に設けられている。
In the embodiment shown in FIG. 1, the light sources 4 and 5, the element 1, and the light receiving sections 6 and 7 are provided in a sensor housing 9 that allows air to flow in from the outside.

次に、第1図の実施例の作用を説明する。 Next, the operation of the embodiment shown in FIG. 1 will be explained.

まず水素ガスの流入がない平常状態にあつて
は、素子1を通過する波長λs=1.4μmおよび波長
λr=1.0μmの光の受光信号は、第2図の図中で示
すようにE10,E20であり、判別部8におけ
る検出信号Esはその初期値においてEso=E10/
E20またはEso=(E20−E10)/E20となつてい
る。
First, under normal conditions with no inflow of hydrogen gas, the received light signals of wavelength λs = 1.4 μm and wavelength λr = 1.0 μm passing through element 1 are E10, E20 as shown in the diagram of FIG. The detection signal Es in the discriminator 8 has an initial value of Eso=E10/
E20 or Eso = (E20-E10)/E20.

この状態で水素ガスが接触したとすると、破線
で示すようにλs=1.4μmを中心に素子1で大きな
光吸収変化が生じ、一方、波長λr=1.0μmでは光
吸収変化はほとんど起こらないため、検出信号
Esはガス濃度に応じて初期値EsoからEs=E1/
E2又はEs=(E2−E1)/E2に変化する。この検
出信号Es=E1/E2が予め定めた閾値レベル以下、
又はEs=(E2−E1)/E2が予め定めた閾値レベ
ル以上となることで判別回路8がガス検出の判別
出力を生ずる。
If hydrogen gas comes into contact with it in this state, a large light absorption change will occur in element 1 around λs = 1.4 μm, as shown by the broken line, but on the other hand, almost no light absorption change will occur at wavelength λr = 1.0 μm, so detection signal
Es changes from the initial value Eso to Es=E1/
Changes to E2 or Es = (E2 - E1) / E2. If this detection signal Es=E1/E2 is below a predetermined threshold level,
Alternatively, when Es=(E2-E1)/E2 becomes equal to or higher than a predetermined threshold level, the discrimination circuit 8 generates a discrimination output of gas detection.

第3図は、第2図の実施例において空気中と雑
ガスが接触したときの素子1の波長に対する透過
率を示したグラフ図であり、実線が空気中を、ま
た破線が雑ガスが接触したときを示す。
FIG. 3 is a graph showing the transmittance of element 1 with respect to wavelength when air and miscellaneous gas come into contact in the embodiment shown in FIG. Indicates when.

即ち、水素原子を解離しにくい水蒸気、アルコ
ール等の雑ガスがセンサ筐体9内に流入した場合
には、破線で示すように素子1の透過率が全体に
亘つて一様に変化し、雑ガスによつては特定の波
長域での光吸収変化は生じない。このような雑ガ
スによる透過率の変化に対し、判別部8では雑ガ
スで変化した波長λs、λrの受光信号E10′,E
20′に応じた検出信号Eso′(Eso′=E10′、/
E20′又はEso′=(E20′−E10′)/E20′)を得てお
り、この検出信号は空気中における波長λs、λr
の受光信号E10,E20に応じた検出信号Eso
(Eso=E10/E20)又はEso=(E20−E1
0)/E10)と略同一になる。従つて、素子1
に水蒸気やアルコール等の雑ガスが接触しても判
別部8は誤つた水素ガスまたは含水素化合物ガス
の判別出力を生ずることがない。
That is, when miscellaneous gases such as water vapor and alcohol that are difficult to dissociate hydrogen atoms flow into the sensor housing 9, the transmittance of the element 1 changes uniformly over the entire element as shown by the broken line, and the miscellaneous gases Depending on the gas, no change in optical absorption occurs in a specific wavelength range. In response to such a change in transmittance due to the miscellaneous gas, the discriminator 8 detects the received light signals E10' and E at wavelengths λs and λr that have changed due to the miscellaneous gas.
Detection signal Eso′ (Eso′=E10′, /
E20′ or Eso′ = (E20′−E10′)/E20′), and this detection signal has wavelengths λs and λr in the air.
Detection signal Eso corresponding to the received light signals E10 and E20
(Eso=E10/E20) or Eso=(E20-E1
0)/E10). Therefore, element 1
Even if a miscellaneous gas such as water vapor or alcohol comes into contact with the gas, the discrimination section 8 will not produce an erroneous discrimination output of hydrogen gas or hydrogen-containing compound gas.

同様に、素子1の経時変化により透過率の絶対
値が変化しても、水素ガスまたは含水素化合物ガ
スの接触で大きな光吸収変化を生ずる波長λsと
光吸収変化をほとんど生じない波長λrにおける
透過率の比は変化しないため、本発明によるガス
センサは、経時変化による影響をほとんど受ける
ことがない。
Similarly, even if the absolute value of transmittance changes due to aging of element 1, the transmission at wavelength λs that causes a large change in light absorption upon contact with hydrogen gas or hydrogen-containing compound gas, and at wavelength λr that causes almost no change in light absorption. Since the rate ratio does not change, the gas sensor according to the invention is hardly affected by aging.

尚、第1図の実施例では触媒金属としてPd、
固体化合物3としてWO3を例にとるものであつ
たが、この他に触媒金属2としては白金Ptを使
用することができ、また固体化合物3としては3
酸化モリブデンMO3、2酸化チタンTiO2、水酸
化イリジウムIr(OH)n、5酸化バナジウム
V2O5を使用することができ、水素ガスまたは含
水素化合物ガスの接触による光吸収変化の大きい
波長λsおよび光吸収変化の小さい波長λrにおけ
る透過率を検出することにより、雑ガスの接触や
経時変化による影響を受けないガスセンサを得る
ことができる。尚、この素子1の光の吸収率の変
化は常温において数百ppmの水素ガスに対し応答
を充分に示し、水素ガス接触後の応答速度も早い
ことが実験的に確認されている。この応答速度は
ヒータにより素子1を加熱することにより更に高
めることができる。
In the example shown in FIG. 1, Pd,
Although WO 3 was taken as an example as the solid compound 3, platinum Pt can also be used as the catalyst metal 2, and WO 3 is used as the solid compound 3.
Molybdenum oxide MO 3 , titanium dioxide TiO 2 , iridium hydroxide Ir(OH)n, vanadium pentoxide
V 2 O 5 can be used, and by detecting the transmittance at the wavelength λs where the change in light absorption is large due to contact with hydrogen gas or hydrogen-containing compound gas and the wavelength λr where the change in light absorption is small due to contact with hydrogen gas or hydrogen-containing compound gas, contact with miscellaneous gases and A gas sensor that is not affected by changes over time can be obtained. It has been experimentally confirmed that the change in light absorption of this element 1 shows a sufficient response to several hundred ppm of hydrogen gas at room temperature, and that the response speed after contact with hydrogen gas is also fast. This response speed can be further increased by heating the element 1 with a heater.

第4図は本発明の他の実施例を示した説明図で
あり、この実施例は単一光源からの光をプリズム
により分離して素子を通過させるようにしたこと
を特徴とする。
FIG. 4 is an explanatory diagram showing another embodiment of the present invention, and this embodiment is characterized in that light from a single light source is separated by a prism and passed through an element.

第4図において、10は光源であり、触媒金属
2と固体化合物3の積層構造をもつ素子1が被検
知ガスとの接触で生ずる光吸収変化の大きい波長
λsおよび光吸収変化の小さい波長λrを含む波長
域の光を発光する。光源10よりの光はプリズム
12で波長λsと波長λrの光に分離され、素子1
を通過して受光部6,7に入射される。勿論、受
光部6,7の受光出力は第1図の実施例と同様に
図示しない判別部8に入力され、被検知ガスの有
無が判別される。この実施例によれば、光源10
が単一で済む分だけセンサ構造を簡単にすること
ができ、また光源の不均一性に基づく誤差を取り
除くことができる。
In FIG. 4, reference numeral 10 denotes a light source, in which an element 1 having a laminated structure of a catalyst metal 2 and a solid compound 3 emits a wavelength λs with a large change in light absorption and a wavelength λr with a small change in light absorption caused by contact with a gas to be detected. It emits light in the wavelength range that includes. The light from the light source 10 is separated by the prism 12 into light of wavelength λs and wavelength λr, and
The light passes through and enters the light receiving sections 6 and 7. Of course, the light-receiving outputs of the light-receiving sections 6 and 7 are inputted to a discriminating section 8 (not shown) as in the embodiment shown in FIG. 1, and the presence or absence of the gas to be detected is discriminated. According to this embodiment, the light source 10
Since only a single sensor is required, the sensor structure can be simplified, and errors due to non-uniformity of the light source can be eliminated.

第5図は本発明の他の実施例を示した説明図で
あり、この実施例は光源および受光部のそれぞれ
を単一としたことを特徴としている。
FIG. 5 is an explanatory diagram showing another embodiment of the present invention, and this embodiment is characterized by having a single light source and a single light receiving section.

第5図において、10は素子1の光吸収波長
λsおよび光吸収変化の小さい波長λrを含む波長
域の光を発光し、素子1を透過した光はプリズム
駆動部14により一定周期で振動されるスイング
プリズム13に入射される。プリズム駆動部14
としてはブザー、スピーカ等に用いられている、
例えばバイモルフ圧電素子を使用する。スイング
プリズム13はプリズム駆動部14により実線の
位置と破線の位置で振動され、実線の位置で光吸
収変化の大きい波長λsの透過光をスリツト16
を介して受光部15に入射し、また破線で示すス
イングプリズム13の位置で光吸収変化の小さい
波長λrの透過光変化の小さい波長λrの透過光を
スリツト16を介して受光部15に入射する。受
光部15よりの受光信号はスイングプリズム13
の振動駆動に同期したサンプリングにより、図示
しない判別部8に入力され、波長λsとλrの透過
光の比に応じた検出信号からガス検知の有無を判
別する。
In FIG. 5, 10 emits light in a wavelength range that includes the light absorption wavelength λs of element 1 and the wavelength λr with a small change in light absorption, and the light transmitted through element 1 is vibrated at a constant period by a prism drive unit 14. The light is incident on the swing prism 13. Prism drive unit 14
It is used for buzzers, speakers, etc.
For example, a bimorph piezoelectric element is used. The swing prism 13 is vibrated by the prism drive unit 14 at the position indicated by the solid line and the position indicated by the broken line.
The transmitted light of the wavelength λr with a small change in light absorption is incident on the light receiving part 15 through the slit 16, and the transmitted light with a wavelength λr with a small change in light absorption is incident on the light receiving part 15 through the slit 16. . The light reception signal from the light receiving section 15 is sent to the swing prism 13.
By sampling in synchronization with the vibration drive of , the signal is input to a discriminator 8 (not shown), and the presence or absence of gas detection is discriminated from a detection signal corresponding to the ratio of transmitted light of wavelengths λs and λr.

第6図は本発明の他の実施例を示した説明図で
あり、この実施例は光フアイバケーブルにより遠
隔監視を行なうようにしたことを特徴とする。
FIG. 6 is an explanatory diagram showing another embodiment of the present invention, and this embodiment is characterized in that remote monitoring is performed using an optical fiber cable.

第6図において、17は受信機であり、光源
4,5および受光部6,7を備え、光源4は素子
1で光吸収変化の大きい波長λsの光を発光し、
また光源5は光吸収変化の小さい波長λrの光を
発光する。光源4,5よりの光は光フアイバケー
ブル18の光フアイバ18a,18bを介して遠
隔的に設置したセンサ筐体9に接続され、光フア
イバ18a,18bの光を触媒金属2と固体化合
物3の積層構造をもつ素子1を透過させ、光フア
イバ18c,18dを介して受信機17の受光部
6,7に戻すようにしている。
In FIG. 6, 17 is a receiver, which includes light sources 4 and 5 and light receiving sections 6 and 7, and the light source 4 emits light at a wavelength λs with a large change in light absorption at the element 1.
Further, the light source 5 emits light having a wavelength λr with a small change in light absorption. The light from the light sources 4 and 5 is connected to the remotely installed sensor housing 9 via the optical fibers 18a and 18b of the optical fiber cable 18, and the light from the optical fibers 18a and 18b is transmitted to the catalyst metal 2 and the solid compound 3. The light is transmitted through the element 1 having a laminated structure and returned to the light receiving sections 6 and 7 of the receiver 17 via optical fibers 18c and 18d.

この実施例によれば、水素ガスまた含水素化合
物ガスの遠隔監視についてセンサ筐体9には電気
回路がまつたく設けられていないことから爆発燃
焼性の被検知ガスを安全に監視することができ
る。
According to this embodiment, since the sensor housing 9 is not provided with an electric circuit for remote monitoring of hydrogen gas or hydrogen-containing compound gas, explosive and combustible gases to be detected can be safely monitored. .

第7図は第6図の光フアイバケーブルを用いた
遠隔監視で用いる本発明の他の実施例を用いて示
した説明図であり、この実施例では触媒金属2、
固体化合物3でなる素子1を反射体として使用
し、光フアイバ18a,18bよりの波長λs,
λrの光を素子1の固体化合物3内に入射させ、
触媒金属2の境界面で反射させて光フアイバ18
c,18dより受信機側に戻すようにしたもので
ある。
FIG. 7 is an explanatory diagram showing another embodiment of the present invention used for remote monitoring using the optical fiber cable of FIG. 6, and in this embodiment, the catalyst metal 2,
The element 1 made of the solid compound 3 is used as a reflector, and the wavelengths λs,
Inject light of λr into the solid compound 3 of the element 1,
The optical fiber 18 is reflected by the interface of the catalyst metal 2.
c and 18d, the signal is returned to the receiver side.

第8図は本発明の他の実施例を示した説明図で
あり、この実施例は光フアイバの端面に本発明で
用いる素子構造を蒸着形成したことを特徴とす
る。
FIG. 8 is an explanatory view showing another embodiment of the present invention, and this embodiment is characterized in that the element structure used in the present invention is formed by vapor deposition on the end face of an optical fiber.

即ち、光フアイバ20の端には素子1を構成す
る固体化合物3および触媒金属2が順次蒸着さ
れ、センサ筐体9内に収納されている。光フアイ
バケーブル18の受信機17側には方向性結合器
19が設けられ、光源10より光吸収波長λsお
よび光吸収変化の小さい波長λrを含む波長域の
光を光フアイバ20を介して伝送し、光フアイバ
20の端面に形成した素子1で反射させて方向性
結合器19よりプリズム駆動部14で振動駆動さ
れるスイングプリズム13に入射し、スイングプ
リズム13の振動でスリツト16を介して受光部
15に光吸収変化の大きい波長λsまたは光吸収
変化の小さい波長λrの光を交互に入射させ、受
光部15よりの受光信号は第5図の実施例と同様
にスイングプリズム13の振動駆動に同期して判
別部でサンプリングされ、波長λsとλrの各受光
信号の差に基づいて被検知ガスの有無が判別され
る。
That is, the solid compound 3 and catalyst metal 2 constituting the element 1 are sequentially deposited on the end of the optical fiber 20 and housed in the sensor housing 9. A directional coupler 19 is provided on the receiver 17 side of the optical fiber cable 18, and transmits light in a wavelength range including the optical absorption wavelength λs and the wavelength λr with small optical absorption change from the light source 10 via the optical fiber 20. It is reflected by the element 1 formed on the end face of the optical fiber 20 and enters the swing prism 13 which is vibrated by the prism drive unit 14 through the directional coupler 19, and is transmitted through the slit 16 by the vibration of the swing prism 13 to the light receiving unit. Light having a wavelength λs with a large change in light absorption or a wavelength λr with a small change in light absorption is alternately incident on the light receiving section 15, and the light reception signal from the light receiving section 15 is synchronized with the vibration drive of the swing prism 13 as in the embodiment shown in FIG. The sampled gas is sampled by the determination unit, and the presence or absence of the gas to be detected is determined based on the difference between the received light signals of wavelengths λs and λr.

第9図は本発明の他の実施例を示した説明図で
あり、この実施例は光フアイバのクラツド構造に
触媒金属と固体化合物でなる素子構造を形成した
ことを特徴とする。
FIG. 9 is an explanatory diagram showing another embodiment of the present invention, and this embodiment is characterized in that an element structure made of a catalytic metal and a solid compound is formed in the clad structure of an optical fiber.

即ち、光の伝搬路となる光フアイバ20の外周
に、まずWO3等の固体化合物3を蒸着し、更に
触媒金属2を蒸着することでクラツド構造を形成
する。光フアイバ20に対しては図示しない光源
により固体化合物3が水素原子により還元される
ことにより生ずる光吸収の小さい波長λsおよび
光吸収変化の小さい波長λrに応じた光が伝搬さ
れる。
That is, a solid compound 3 such as WO 3 is first vapor-deposited on the outer periphery of the optical fiber 20, which serves as a light propagation path, and then a catalyst metal 2 is further vapor-deposited to form a clad structure. A light source (not shown) propagates into the optical fiber 20 light corresponding to a wavelength λs at which light absorption is small and a wavelength λr at which light absorption change is small, which are generated when the solid compound 3 is reduced by hydrogen atoms.

その作用は、被検知ガスの接触がないときに
は、光フアイバ20のクラツドを形成する固体化
合物3および触媒金属2で波長λs、λrのいずれ
についても光吸収率が小さいことから、光源より
の光は光フアイバ20内を反射して効率よく伝送
される。一方、被検知ガスが接触すると、触媒金
属2で生成された水素原子が固体化合物3を還元
し、固体化合物、例えばWO3であるときには波
長λs=1.4μmで大きな光吸収変化を生じ、光フア
イバ20内を伝送される波長λsの光量が減少し、
一方、光吸収変化の小さいλrの光量はほとんど
減少しない。従つて、光フアイバ20内を伝送さ
れた光を波長λsとλrに分けて受光することによ
り、被検知ガスの有無を判別することができる。
The effect is that when there is no contact with the gas to be detected, the solid compound 3 and catalyst metal 2 that form the cladding of the optical fiber 20 have a small light absorption rate for both wavelengths λs and λr, so the light from the light source is The light is reflected within the optical fiber 20 and transmitted efficiently. On the other hand, when the gas to be detected comes into contact, the hydrogen atoms generated by the catalyst metal 2 reduce the solid compound 3, and when the solid compound is WO3 , for example, a large optical absorption change occurs at the wavelength λs = 1.4 μm, and the optical fiber The amount of light of wavelength λs transmitted within 20 decreases,
On the other hand, the light amount of λr, which has a small change in light absorption, hardly decreases. Therefore, by dividing the light transmitted through the optical fiber 20 into wavelengths λs and λr and receiving the light, it is possible to determine the presence or absence of the gas to be detected.

第10図は本発明の他の実施例を示したもの
で、例えば第1図の実施例では素子1における触
媒金属2と固体化合物3の積層方向に波長λsお
よびλrの光を透過させているが、この実施例で
は光フアイバよりの透過光を薄膜光導波路を形成
する固体化合物3内を通過させるようにしたこと
を特徴とする。
FIG. 10 shows another embodiment of the present invention. For example, in the embodiment of FIG. 1, light of wavelengths λs and λr is transmitted in the stacking direction of the catalyst metal 2 and solid compound 3 in the element 1. However, this embodiment is characterized in that the transmitted light from the optical fiber is made to pass through the solid compound 3 forming the thin film optical waveguide.

即ち、基板21上にWO3等の固体化合物3と
Pd等の触媒金属2を蒸着して素子1を作り、固
体化合物3は基板21および触媒金属2の間に薄
膜光導波路を形成し、固体化合物3の両端に光フ
アイバ20を結合して光源から導かれた光吸収波
長λsおよび光吸収変化の小さい波長λrの光を固
体化合物3でなる薄膜光導波路内に伝搬させるよ
うにしたものである。
That is, a solid compound 3 such as WO 3 is placed on the substrate 21.
A device 1 is made by depositing a catalyst metal 2 such as Pd, a solid compound 3 forms a thin film optical waveguide between a substrate 21 and the catalyst metal 2, and optical fibers 20 are connected to both ends of the solid compound 3 to connect a light source. The guided light having a light absorption wavelength λs and a wavelength λr with a small change in light absorption are propagated into a thin film optical waveguide made of a solid compound 3.

第11図は本発明の他の実施例を示したもの
で、この実施例は素子1と一体に光源および受光
部を形成したことを特徴とし、第12図にA−A
断面を示す。
FIG. 11 shows another embodiment of the present invention, and this embodiment is characterized in that a light source and a light receiving section are formed integrally with the element 1.
A cross section is shown.

即ち、基板21に続いてWO3等の固体化合物
3を蒸着し、更にPd等の触媒金属2を蒸着して
素子1の構造を実現し、光源4,5のそれぞれよ
り発せられた光吸収波長λsと光吸収変化の小さ
い波長λrの各光を固体化合物3でなる光導波路
内に伝搬させ、固体化合物と一体に形成した受光
素子6,7に入射して電気信号に変換するように
したものであり、素子1、光源4,5および受光
部6,7を一体化できる利点を有する。
That is, following the substrate 21, a solid compound 3 such as WO 3 is vapor-deposited, and a catalyst metal 2 such as Pd is further vapor-deposited to realize the structure of the element 1. Each light having a wavelength λr with a small change in optical absorption compared to λs is propagated into an optical waveguide made of a solid compound 3, enters light receiving elements 6 and 7 formed integrally with the solid compound, and is converted into an electrical signal. This has the advantage that the element 1, the light sources 4 and 5, and the light receiving sections 6 and 7 can be integrated.

次に、本発明の効果を説明すると、水素または
含水素化合物ガスを吸着解離する金属と、この金
属中に生成した水素原子により還元される固体化
合物との積層構造を備えた素子を使用し、この素
子に固体化合物の還元により大きな光吸収変化を
生ずる波長の光を透過もしくは反射すると共に光
吸収変化の小さい波長の光を透過または反射させ
て検出し、検出した光吸収変化の大きい波長の光
と光吸収変化の小さい波長の光の検出信号により
水素または含水素化合物ガスの有無を判別するよ
うにしたため、水蒸気やアルコール等の雑ガスが
接触した場合には、水素原子による還元で光吸収
が起きないため、素子の全体的な光透過もしくは
反射特性が変化しても被検知ガスを誤つて検出し
てしまうことが確実に防止でき、更に素子の経時
変化で透過率もしくは反射率の特性が変化して
も、被検知ガスの接触で大きな光吸収変化を生ず
る波長の光と光吸収変化の小さい波長の光とに基
づいて被検知ガスの有無を判別しているため、経
時変化によつても検出特性はほとんど影響せず、
安定性と信頼性に優れたガスセンサを得ることが
できる。
Next, to explain the effects of the present invention, an element having a layered structure of a metal that adsorbs and dissociates hydrogen or hydrogen-containing compound gas and a solid compound that is reduced by the hydrogen atoms generated in this metal, This element transmits or reflects light at a wavelength that causes a large change in optical absorption due to the reduction of the solid compound, and also transmits or reflects light at a wavelength that causes a small change in optical absorption, and detects the detected light at a wavelength that causes a large change in optical absorption. Since the presence or absence of hydrogen or hydrogen-containing compound gas is determined based on the detection signal of light with a wavelength that causes a small change in optical absorption, in the case of contact with miscellaneous gases such as water vapor or alcohol, light absorption is reduced due to reduction by hydrogen atoms. This makes it possible to reliably prevent false detection of the gas to be detected even if the overall light transmission or reflection characteristics of the element change.Furthermore, it is possible to prevent the transmission or reflectance characteristics from changing over time due to changes in the element's overall light transmission or reflection characteristics. Even if the gas changes over time, the presence or absence of the gas to be detected is determined based on the wavelength of light that causes a large change in optical absorption upon contact with the gas to be detected, and the light of a wavelength that causes a small change in optical absorption. has almost no effect on the detection characteristics,
A gas sensor with excellent stability and reliability can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示した説明図、第
2図は第1図の素子における平常時とガス検出時
の光波長に対する透過率を示したグラフ図、第3
図は雑ガスが接触したときの光波長に対する透過
率を示したグラフ図、第4図は単一光源を用いた
本発明の他の実施例を示した説明図、第5図は光
源および受光部を単一とした本発明の他の実施例
を示した説明図、第6,7図は光フアイバケーブ
ルによる遠隔監視の実施例を示した説明図、第8
図は光フアイバの端面に素子構造を蒸着形成した
本発明の他の実施例を示した説明図、第9図は光
フアイバのクラツドにセンサ構造を備えた本発明
の他の実施例の説明図、第10図は薄膜光導波路
を用いた本発明の他の実施例を示した説明図、第
11図は光源、素子および受光部を一体構造とし
た本発明の他の実施例を示した説明図、第12図
は第11図のA−A断面図である。 1:素子、2:触媒金属、3:固体化合物、
4,5,10:光源、30:電源、6,7,1
5:受光部、8:判別部、9:センサ筐体、1
2:プリズム、13:スイングプリズム、14:
プリズム駆動部、16:スリツト、17:受信
機、18:光フアイバケーブル、18a〜18
d,20:光フアイバ、19:方向性結合器、2
1:基板。
Fig. 1 is an explanatory diagram showing an embodiment of the present invention, Fig. 2 is a graph showing the transmittance of the element in Fig. 1 at normal times and during gas detection with respect to light wavelengths, and Fig. 3
The figure is a graph showing the transmittance for light wavelength when it comes into contact with a miscellaneous gas, Figure 4 is an explanatory diagram showing another embodiment of the present invention using a single light source, and Figure 5 is a light source and light receiver. FIGS. 6 and 7 are explanatory diagrams showing another embodiment of the present invention with a single part; FIGS. 6 and 7 are explanatory diagrams showing an embodiment of remote monitoring using an optical fiber cable; FIG.
The figure is an explanatory diagram showing another embodiment of the present invention in which an element structure is formed on the end face of an optical fiber by vapor deposition, and FIG. 9 is an explanatory diagram of another embodiment of the present invention in which a sensor structure is provided on the cladding of the optical fiber. , FIG. 10 is an explanatory diagram showing another embodiment of the present invention using a thin film optical waveguide, and FIG. 11 is an explanatory diagram showing another embodiment of the present invention in which a light source, an element, and a light receiving section are integrated. 12 is a sectional view taken along the line AA in FIG. 11. 1: Element, 2: Catalyst metal, 3: Solid compound,
4, 5, 10: light source, 30: power supply, 6, 7, 1
5: Light receiving section, 8: Discrimination section, 9: Sensor housing, 1
2: Prism, 13: Swing prism, 14:
Prism drive unit, 16: slit, 17: receiver, 18: optical fiber cable, 18a to 18
d, 20: optical fiber, 19: directional coupler, 2
1: Substrate.

Claims (1)

【特許請求の範囲】 1 水素または含水素化合物ガスを吸着解離する
金属と該金属中の水素原子により還元される固体
化合物との積層構造を備えた素子と、 前記固体化合物の還元により生ずる光吸収変化
が大きい波長の光を監視する第1の検出部と、 前記化合物の還元により光吸収変化が生じない
か又は小さい波長の光を監視査する第2の検出部
と、 前記第1の検出部の検出信号と第2の検出部の
検出信号により前記水素または含水素化合物ガス
の有無を判別する判別部とを設けたことを特徴と
するガスセンサ。
[Scope of Claims] 1. An element having a layered structure of a metal that adsorbs and dissociates hydrogen or hydrogen-containing compound gas and a solid compound that is reduced by hydrogen atoms in the metal, and a device that absorbs light caused by the reduction of the solid compound. a first detection unit that monitors light with a wavelength that changes significantly; a second detection unit that monitors light with a small wavelength that does not cause a change in light absorption due to reduction of the compound; and the first detection unit A gas sensor comprising: a determination section that determines the presence or absence of the hydrogen or hydrogen-containing compound gas based on the detection signal of the second detection section and the detection signal of the second detection section.
JP19178383A 1983-10-14 1983-10-14 Gas sensor Granted JPS6082946A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19178383A JPS6082946A (en) 1983-10-14 1983-10-14 Gas sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19178383A JPS6082946A (en) 1983-10-14 1983-10-14 Gas sensor

Publications (2)

Publication Number Publication Date
JPS6082946A JPS6082946A (en) 1985-05-11
JPH0339579B2 true JPH0339579B2 (en) 1991-06-14

Family

ID=16280461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19178383A Granted JPS6082946A (en) 1983-10-14 1983-10-14 Gas sensor

Country Status (1)

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JP (1) JPS6082946A (en)

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JPH04262245A (en) * 1991-01-29 1992-09-17 Mitsubishi Electric Corp Method and apparatus for evaluating amount of impurity gas
JP4717522B2 (en) * 2005-06-10 2011-07-06 独立行政法人 日本原子力研究開発機構 Fabrication method of tungsten oxide thin film for optical hydrogen detection material
JP2013152091A (en) * 2012-01-24 2013-08-08 Riken Keiki Co Ltd Optical gas measuring device

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