JPH0340091B2 - - Google Patents
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- Publication number
- JPH0340091B2 JPH0340091B2 JP5895686A JP5895686A JPH0340091B2 JP H0340091 B2 JPH0340091 B2 JP H0340091B2 JP 5895686 A JP5895686 A JP 5895686A JP 5895686 A JP5895686 A JP 5895686A JP H0340091 B2 JPH0340091 B2 JP H0340091B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- melting
- metal
- boat
- intermetallic compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 26
- 238000002844 melting Methods 0.000 claims description 21
- 230000008018 melting Effects 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 18
- 229910000765 intermetallic Inorganic materials 0.000 claims description 16
- 150000002739 metals Chemical class 0.000 claims description 14
- 238000007670 refining Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 description 19
- 238000004857 zone melting Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000010453 quartz Substances 0.000 description 12
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 229910052787 antimony Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000004821 distillation Methods 0.000 description 6
- 238000000746 purification Methods 0.000 description 6
- 238000005275 alloying Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229920002449 FKM Polymers 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- -1 etc. Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 108010063955 thrombin receptor peptide (42-47) Proteins 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Manufacture And Refinement Of Metals (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、帯溶融法による金属の精製法に関
するものであり、更に詳しくは被精製金属と他の
金属との間で金属間化合物半導体を形成し、該金
属間化合物半導体を帯溶融法により精製した後、
精製された金属間化合物半導体を、元の金属に分
離して目的とする被精製金属を精製するものであ
る。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a method for refining a metal by a zone melting method, and more specifically, to a method for refining a metal by a zone melting method, and more specifically, to form an intermetallic compound semiconductor between a metal to be refined and another metal. After forming and refining the intermetallic compound semiconductor by a zone melting method,
The purified intermetallic compound semiconductor is separated into the original metal to purify the target metal.
（従来技術）
帯溶融法（zone refining）は、金属乃至半導
体の精製法として周知な方法である。(Prior Art) Zone refining is a well-known method for refining metals and semiconductors.
この帯溶融法によれば、ある特定の不純物に対
して極めて有効で、濃度比を10-10程度まで下げ
ることができる。 This zone melting method is extremely effective against certain impurities and can reduce the concentration ratio to about 10 -10 .
（発明の解決しようとする問題点）
しかし、この帯溶融法も、別の特定の不純物に
対しては殆ど効果のないことがある。(Problems to be Solved by the Invention) However, this zone melting method may also have little effect on other specific impurities.
これは、母体金属（又は半導体）に対する不純
物原子の偏析係数Ｋ＝CS／CL（CS／CLは金属の融
点付近のある一定温度で、固相中の不純物濃度CS
と液相中の不純物濃度CLとの比を表わす）が、
不純物原子の種類により異なることによる。 This is the segregation coefficient of impurity atoms with respect to the base metal (or semiconductor) K = C S / C L (C S / C L is the impurity concentration in the solid phase C S at a certain temperature near the melting point of the metal)
and the impurity concentration C L in the liquid phase) is
This is because it differs depending on the type of impurity atom.
即ち、Ｋ〓１またはＫ〓１であるような不純物
元素に対しては、帯溶融法は極めて有効である
が、Ｋ１の不純物に対しては余り有効でない。 That is, the zone melting method is extremely effective for impurity elements such as K〓1 or K〓1, but is not so effective for impurities of K1.
Ｋ１の不純物は、何回帯溶融を繰り返しても
除去されにくいばかりでなく、長時間帯溶融に掛
ると、周囲から他の不純物が侵入することにな
り、精製が進まなくなる。 Impurities in K1 are not only difficult to remove no matter how many times band melting is repeated, but if band melting is continued for a long time, other impurities will enter from the surroundings, making it difficult to proceed with purification.
そこで、この発明はＫ１の不純物に対しても
有効な帯溶融による金属の精製法を開発すること
を目的とするものである。 Therefore, the object of the present invention is to develop a method for refining metals by zone melting that is also effective against K1 impurities.
（問題点を解決するための手段）
以上の問題点を解説するため、本願発明者等は
鋭意研究の結果、族、族、族、族に属す
る被精製金属と他種類の金属とを組み合せること
により−族または−族の金属間化合物半
導体を形成し、該金属間化合物半導体を帯溶融に
より精製し、精製された金属間化合物半導体を、
元の金属に分離して金属の精製を行なう方法を提
案するものである。(Means for Solving the Problems) In order to explain the above problems, the inventors of the present application, as a result of intensive research, combined metals to be refined belonging to Group, Group, Group, Group with other types of metals. By forming a - group or - group intermetallic compound semiconductor, the intermetallic compound semiconductor is purified by zone melting, and the purified intermetallic compound semiconductor is
This paper proposes a method for refining metals by separating them into the original metals.
即ち、族、族、族、族に属する被精製
金属については該金属を母体とするとき、不純物
元素の偏析係数がＫ１であつても、他種類の金
属と組み合わせることにより−族または−
族の金属間化合物半導体を形成すると、Ｋ＞１
またはＫ＜１となり、帯溶融法が有効に行なわれ
る。 In other words, even if the segregation coefficient of an impurity element is K1 when the metal to be refined belongs to a group, a group, a group, or a group, when the metal is used as a base material, by combining it with other types of metals, it becomes - group or -.
When forming a group of intermetallic compound semiconductors, K>1
Alternatively, K<1, and the zone melting method is effectively performed.
例えば、帯溶融法により10-5〜10-6程度に不純
物濃度を下げたInとSb（最高純度金属）を原料と
して金属間化合物半導体InSbを作り、化学量論
組成に近付けるための帯溶融を数十回行なうと、
InSb結晶中に含まれる全不純物原子数を1015cm-3
以下（濃度比：6.7×10-8）にすることができ
る。このInSb結晶を溶融点付近（500℃）に加
熱して真空蒸留するとSbとInを分離することが
でき、InSbの結晶と同程度、即ち10-8程度の不純
物濃度の金属Inと金属Sbとが得られる。 For example, the intermetallic compound semiconductor InSb is made using In and Sb (the highest purity metals) with impurity concentrations reduced to about 10 -5 to 10 -6 using the band melting method, and then band melting is performed to bring the composition closer to the stoichiometric composition. After doing it several dozen times,
The total number of impurity atoms contained in the InSb crystal is 10 15 cm -3
(concentration ratio: 6.7×10 -8 ). By heating this InSb crystal to near its melting point (500°C) and vacuum distilling it, Sb and In can be separated. is obtained.
そこで、この発明においては上述のように
族、族、族、族に属する被精製金属に対し
て例えば化学量論組成１：１の−族または
−族の金属間化合物半導体を形成し、この金属
間化合物半導体について帯溶融製法を行なつた
後、精製された金属間化合物半導体を元の金属に
分離して金属の精製を行なうものである。 Therefore, in the present invention, as mentioned above, an intermetallic compound semiconductor of - group or - group with a stoichiometric composition of 1:1 is formed for the metal to be refined belonging to group, group, group, group, group, etc. After performing a zone melting process on an intermetallic compound semiconductor, the refined intermetallic compound semiconductor is separated into the original metal to perform metal purification.
なお、この発明の方法は上述のIn、Sbの精製
にのみ適用されるものでなく、−族または
−族の金属間化合物半導体を形成することがで
きる金属、例えばZn、Cd、Hg等の族、Al、
Ga等の族、Ｐ、As等の族、Ｓ、Se、Te
族の金属の精製についてこの発明の方法を適用す
ることができる。 Note that the method of the present invention is not only applicable to the purification of In and Sb mentioned above, but also to metals that can form - group or - group intermetallic compound semiconductors, such as group metals such as Zn, Cd, and Hg. ,Al,
Groups such as Ga, P, As, etc., S, Se, Te
The method of the invention can be applied for the purification of group metals.
また、精製された金属間化合物半導体を元の金
属に分離する方法としては、蒸留法等により行な
うことができる。 Further, as a method for separating the purified intermetallic compound semiconductor into the original metal, a distillation method or the like can be used.
（実施例）
以下、金属In及び金属Sbの高純度化を行なう
ために、この発明を適用した実施例を示す。(Example) Hereinafter, an example in which the present invention is applied in order to highly purify metal In and metal Sb will be shown.
(1) 原料
In：〜1.0Kg（純度 10-6）
Sb：〜1.1Kg（純度 10-6）
In、Sb共に帯溶融法で精製したインゴツト
を使用する。(1) Raw materials In: ~1.0Kg (purity 10-6 ) Sb: ~1.1Kg (purity 10-6 ) Ingots purified by the zone melting method are used for both In and Sb.
インゴツトの取扱い、計量は清浄室で行なつ
た。Inは液体室素温度に冷却して砕くことがで
き、Sbは室温で砕くことができる。 Ingots were handled and weighed in a clean room. In can be crushed by cooling to the temperature of the liquid chamber, and Sb can be crushed at room temperature.
(2) 使用する装置
(a) るつぼ
るつぼとしては、第１図に示すように深皿
状の溶融石英製ボート１を使用し、該ボート
１は濃硫酸、次いで蒸留水を使用して超音波
洗浄し、更に10-4Paの真空中で約1000℃に
加熱し、30分間空焼きしておく。(2) Apparatus used (a) Crucible As the crucible, a deep dish-shaped fused silica boat 1 is used as shown in Fig. Wash it, heat it to about 1000°C in a vacuum of 10 -4 Pa, and bake it for 30 minutes.
(b) 帯溶融炉
第２図に示すような透明の石英管２を水平
面に対して±15゜まで傾斜できるように配置
し、更に該石英管２の両端にはステンレス鋼
製のキヤツプ３ａとキヤツプ３ｂをバイトン
ゴム製のＯリング４を介して気密に接続す
る。 (b) Belt melting furnace A transparent quartz tube 2 as shown in Fig. 2 is arranged so that it can be tilted up to ±15° with respect to the horizontal plane, and stainless steel caps 3a are attached to both ends of the quartz tube 2. The cap 3b is airtightly connected via an O-ring 4 made of Viton rubber.
なお、キヤツプ３ａには高純度水素の入口
５ａと排気系からの不純物の逆流を防ぐため
の液体窒素トラツプ６を設け、またキヤツプ
３ｂには高純度水素の出口５ｂを設ける。 The cap 3a is provided with an inlet 5a for high-purity hydrogen and a liquid nitrogen trap 6 for preventing backflow of impurities from the exhaust system, and the cap 3b is provided with an outlet 5b for high-purity hydrogen.
また、石英管２の外側には内部に冷却水の
通水管を設けた合金化用コイル７と帯溶融コ
イル８を設け、該コイル７，８には高周波電
源９（〜400KHz）を接続する。 Furthermore, an alloying coil 7 and a band melting coil 8, each having a cooling water pipe inside, are provided on the outside of the quartz tube 2, and a high frequency power source 9 (up to 400 KHz) is connected to the coils 7 and 8.
以上のような石英管２内には原料を装填した
ボート１を配置し、該ボート１は溶融石英棒１
０を用いて牽引し、石英管２内を移動できるよ
うにしてある。 A boat 1 loaded with raw materials is arranged inside the quartz tube 2 as described above, and the boat 1 is equipped with a fused quartz rod 1.
It is made possible to move inside the quartz tube 2 by towing it using the quartz tube 2.
(3) 精製方法
(a) 合金化
In及びSbインゴツトをそれぞれ凡そ３等
分し、原子比１：１の割合で合わせる。例え
ば、In330.0grにはSb350.1grを加える。(3) Purification method (a) Alloying In and Sb ingots are each divided into approximately three equal parts and combined at an atomic ratio of 1:1. For example, add Sb350.1gr to In330.0gr.
以上のように原料を装填したボート１は石
英管２内の合金化用コイル７部分に配置し、
更に石英管２内を〜10-4Paまで排気し、高
純度水素を導入する。 The boat 1 loaded with raw materials as described above is placed in the alloying coil 7 part within the quartz tube 2,
Furthermore, the inside of the quartz tube 2 is evacuated to ~10 -4 Pa, and high-purity hydrogen is introduced.
なお、ここで高純度水素としては液体水素
から蒸発して得られたもの、または液体窒素
トラツプを通して酸素と水分を十分に除去し
たもの等を使用する。 Note that the high-purity hydrogen used herein is hydrogen obtained by evaporation from liquid hydrogen, or hydrogen from which oxygen and moisture have been sufficiently removed through a liquid nitrogen trap.
次いで、石英管２内を0.1気圧の加圧状態
を保ちながら高周波電源９の出力を上げて行
く。 Next, the output of the high frequency power source 9 is increased while maintaining the pressurized state of 0.1 atmosphere inside the quartz tube 2.
高周波電源９の出力を上げることによりIn
が融解（融点156.6℃）してその溶融液がボ
ート１全体に拡がり、Sb塊を濡らすように
なつた後、温度をSbの融点（630.7℃）以上
に上げ、全体を溶かして合金化させるように
する。 By increasing the output of the high frequency power supply 9,
After the Sb melts (melting point: 156.6°C) and the molten liquid spreads throughout the boat 1 and wets the Sb lump, the temperature is raised above the melting point of Sb (630.7°C) to melt and alloy the entire Sb. Make it.
合金化終了後、InSbインゴツトの太さを
一様に保つために、石英管２を水平に対して
約10度傾斜させ、ボート１の先端が下向きに
なるようにする。 After alloying, in order to keep the thickness of the InSb ingot uniform, the quartz tube 2 is tilted about 10 degrees with respect to the horizontal, so that the tip of the boat 1 points downward.
なお、水素ガスの流量（10KPa １／
min）は、出口５ｂのチエツクバルブ通過
後、モニターするようにしてある。 In addition, the flow rate of hydrogen gas (10KPa 1/
min) is monitored after passing through the check valve at the outlet 5b.
(b) 帯溶融
上記のようにしてInとSbが完全に溶融し
た後、ボート１を速さ３mm／minでＡ点方向
に移動させる。ボート１がＡ点に達すると帯
溶融を始める。 (b) Band melting After In and Sb are completely melted as described above, the boat 1 is moved toward point A at a speed of 3 mm/min. When boat 1 reaches point A, band melting begins.
そこで、水素の流量をそのまゝにしてボー
ト１の速度を1.5mm／minに減速する。 Therefore, the speed of boat 1 is reduced to 1.5 mm/min while leaving the hydrogen flow rate unchanged.
なお、帯溶融においては各溶融帯の幅を10
〜20mmに揃えるように、電源の出力とコイル
の間隔を調整しておく。 In addition, in zone melting, the width of each melting zone is 10
Adjust the power output and coil spacing so that they are aligned at ~20mm.
ボート１の先端がＢ点に達したら、ボート
１の先端をＡ点に戻し、この後同じ操作を４
回を繰り返し、溶融帯を30回通して終了す
る。 When the tip of boat 1 reaches point B, return the tip of boat 1 to point A and repeat the same operation 4 times.
Repeat the process, passing through the melt zone 30 times and finishing.
他の2/3ずつのInとSbについても同様な処
理を行なつた。 The same process was carried out for the other 2/3 of In and Sb.
(c) 帯溶融
上記帯溶融でInSbインゴツト３本を作
成した。このインゴツトの両端を端から60〜
80mmずつ割り取り、残りを半分ずつ、帯溶融
と同様にして溶融帯を30回通す。帯溶融終
了後帯溶融と同様に２本のInSbの両端を
切り捨て、残りを分離する。 (c) Band melting Three InSb ingots were created by the band melting described above. 60~ from both ends of this ingot
Cut out 80mm pieces and pass the remaining half through the melted band 30 times in the same way as band melting. After band melting is completed, both ends of the two InSb are cut off and the remainder is separated in the same way as band melting.
(d) 分離
精製したInSbは蒸留法でInとSbに分離す
る。蒸留炉は超高真空（〜10-8Pa）にして、
〜1000℃に加熱し、不純物を除去する。 (d) Separation Purified InSb is separated into In and Sb using a distillation method. The distillation furnace is set to ultra-high vacuum (~10 -8 Pa),
Heat to ~1000℃ to remove impurities.
InSbを加熱するためのるつぼは、上記帯溶融
に使用したボート１をそのまゝ利用した。 As a crucible for heating InSb, the same boat 1 used for the zone melting described above was used.
InSbを入れたボート１を蒸留炉内に入れ、〜
10-8Paまで排気した後、電子ビーム（または高
周波）でInSbを徐々に加熱し、Sbの蒸気圧が0.5
〜1Paに保持されるように温度（〜500℃）を調
整する。 Put the boat 1 containing InSb into the distillation furnace, and ~
After evacuation to 10 -8 Pa, InSb is gradually heated with an electron beam (or high frequency) until the vapor pressure of Sb is 0.5.
Adjust the temperature (~500 °C) so that it is held at ~1 Pa.
次いで、第３図に示すように溶融石英製の円錐
筒１１，……の列設下方を矢印方向に、ボート１
を通過させると、蒸発したSbは円錐筒１１の内
壁に付着し、堆積する。一方Inはボート１内に残
留する。 Next, as shown in FIG.
When the Sb is passed through, the evaporated Sb adheres to the inner wall of the conical cylinder 11 and is deposited thereon. On the other hand, In remains in boat 1.
円錐筒１１内に数mmの厚みで堆積したSbは、
円錐筒１１を液体窒素内に挿入して急冷させる
と、石英とSbとの熱膨張率の差によりSbが円錐
筒１１内壁より剥離することができる。InがSb
中に残留しているときは、帯溶融法を繰り返すこ
とによりInを除去する。 The Sb deposited in the conical cylinder 11 with a thickness of several mm is
When the conical tube 11 is inserted into liquid nitrogen and rapidly cooled, Sb can be peeled off from the inner wall of the conical tube 11 due to the difference in thermal expansion coefficient between quartz and Sb. In is Sb
If In remains in the ink, remove it by repeating the zone melting method.
一方Inについては、Sbの堆積していない新し
い円錐筒に変え、ボート１の温度を700〜800℃に
して残りのSbと不純物を蒸発させる。 On the other hand, for In, a new conical cylinder with no Sb deposited is used, and the temperature of boat 1 is set to 700 to 800°C to evaporate the remaining Sb and impurities.
ボート１内のInの中に残留するSbを除くため、
更に帯溶融精製を行なつた。この帯溶融の回数
は、蒸留後純度の中間テストの結果から判定する
が、10〜20回で良い。 In order to remove Sb remaining in In in boat 1,
Further band melting purification was carried out. The number of times of this zone melting is determined from the results of an intermediate test of purity after distillation, and may be 10 to 20 times.
この結果、分離によつて不純物濃度比10-8程度
の金属Sbと金属Inが得られた。 As a result, metal Sb and metal In with an impurity concentration ratio of about 10 -8 were obtained by separation.
（発明の効果）
以上要するに、従来金属単体を対象とした帯溶
融精製法では不純物濃度比を10-3〜10-6まで下げ
るのが限度であつたが、この発明によれはこの限
界を更に２〜３桁下げ、10-7〜10-9にまで下げる
ことができる。(Effects of the Invention) In summary, in the conventional zone melting refining method for simple metals, the limit was to lower the impurity concentration ratio to 10 -3 to 10 -6 , but the present invention further exceeds this limit. It can be lowered by 2 to 3 digits, down to 10 -7 to 10 -9 .
これ等高純度の金属は液体ヘリウム温度での電
子素子の高性能化や、超LSI製作の原料として使
用することができる。 These high-purity metals can be used to improve the performance of electronic devices at liquid helium temperatures and as raw materials for VLSI fabrication.
図面は、この発明の一実施例を示すもので、第
１図は実施例に使用したボートの平面図、第２図
は帯溶融精製部の概略図、第３図は蒸留部の側面
図である。
図中、１は溶融石英製ボート、２は石英管、７
は合金化コイル、８は帯溶融用コイル、１１は円
錐筒である。
The drawings show an embodiment of the present invention; Fig. 1 is a plan view of a boat used in the embodiment, Fig. 2 is a schematic diagram of the zone melting and refining section, and Fig. 3 is a side view of the distillation section. be. In the figure, 1 is a fused silica boat, 2 is a quartz tube, and 7
8 is an alloying coil, 8 is a band melting coil, and 11 is a conical cylinder.
Claims (1)
と他種類の金属を組み合せることにより−族
または−族の金属間化合物半導体を形成し、
該金属間化合物半導体を帯溶融により精製し、精
製された金属間化合物半導体を、元の金属に分離
して被精製金属の精製を行なうことを特徴とする
金属の精製方法。1 Forming a -group or -group intermetallic compound semiconductor by combining the metal to be refined belonging to the group, group, group, or group with other types of metals,
A method for refining a metal, which comprises refining the intermetallic compound semiconductor by band melting and separating the refined intermetallic compound semiconductor into the original metal to purify the metal to be refined.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5895686A JPS62214139A (en) | 1986-03-17 | 1986-03-17 | Method for refining metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5895686A JPS62214139A (en) | 1986-03-17 | 1986-03-17 | Method for refining metal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62214139A JPS62214139A (en) | 1987-09-19 |
| JPH0340091B2 true JPH0340091B2 (en) | 1991-06-17 |
Family
ID=13099288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5895686A Granted JPS62214139A (en) | 1986-03-17 | 1986-03-17 | Method for refining metal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62214139A (en) |
-
1986
- 1986-03-17 JP JP5895686A patent/JPS62214139A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62214139A (en) | 1987-09-19 |
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