JPH0342682B2 - - Google Patents
Info
- Publication number
- JPH0342682B2 JPH0342682B2 JP60116910A JP11691085A JPH0342682B2 JP H0342682 B2 JPH0342682 B2 JP H0342682B2 JP 60116910 A JP60116910 A JP 60116910A JP 11691085 A JP11691085 A JP 11691085A JP H0342682 B2 JPH0342682 B2 JP H0342682B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- electrode
- film
- sic
- resistor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 32
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 19
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 18
- 230000005496 eutectics Effects 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 239000011888 foil Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は耐熱性の高い薄膜サーミスタに関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a thin film thermistor with high heat resistance.
従来の技術
薄膜サーミスタは、例えば、長井、他、ナシヨ
ナルテクニカルレポート（National Technical
Report）vol.26，（1980）P.403に示されているよ
うに、平板状絶縁性基板の一方の表面に感温抵抗
体膜と一対の電極膜とを形成して構成される。Conventional technology Thin film thermistors have been proposed, for example, by Nagai et al.
Report) vol. 26, (1980) P. 403, it is constructed by forming a temperature-sensitive resistor film and a pair of electrode films on one surface of a flat insulating substrate.
発明が解決しようとする問題点
前記文献に示されているように、感温抵抗体膜
として炭化硅素（SiC）抵抗体、一対の電極膜と
してAu−Pt厚膜電極膜を用いたとき、この薄膜
サーミスタは空気中400〜450℃の高温に耐える優
れた耐熱性を有する。しかし、この温度以上では
特性変化が大きいという欠点があつた。この原因
のひとつは、薄膜サーミスタが空気中で高温（例
えば、600℃）に暴されたとき、SiC抵抗体膜と
接するAu−Pt電極膜の界面に絶縁性の薄い層が
形成され、このためにSiC抵抗体膜とAu−Pt電
極膜との間に大きな接触抵抗が存在することにあ
る。Problems to be Solved by the Invention As shown in the above document, when a silicon carbide (SiC) resistor is used as the temperature-sensitive resistor film and an Au-Pt thick film electrode film is used as the pair of electrode films, this Thin film thermistors have excellent heat resistance, being able to withstand high temperatures of 400-450°C in air. However, there was a drawback that the characteristics changed significantly above this temperature. One of the reasons for this is that when a thin film thermistor is exposed to high temperatures (e.g. 600°C) in the air, a thin insulating layer is formed at the interface of the Au-Pt electrode film in contact with the SiC resistor film. This is because there is a large contact resistance between the SiC resistor film and the Au-Pt electrode film.
この薄い絶縁層が形成される詳細な理由は不明
であるが、次のように考えられる。Au−Pt電極
膜は、Au，Ptの金属微粒子と硝子との均一な混
合物で構成されるが、高温雰囲気中に長時間放置
されたとき、金属微粒子と硝子とが分離し易すく
なる。このため硝子成分の多い部分が絶縁性にな
ると考えられる。 Although the detailed reason for forming this thin insulating layer is unknown, it is thought to be as follows. The Au-Pt electrode film is composed of a uniform mixture of fine metal particles of Au and Pt and glass, but when left in a high temperature atmosphere for a long time, the fine metal particles and glass tend to separate. For this reason, it is thought that the portion with a large amount of glass component becomes insulating.
本発明は電極として硝子成分を含まない材料を
用いることにより前記欠点を解消した薄膜サーミ
スタを提供するものである。 The present invention provides a thin film thermistor that eliminates the above-mentioned drawbacks by using a material that does not contain a glass component as an electrode.
問題点を解決するための手段
前記問題点を解決する本発明の技術的な手段
は、共晶銀ろうでSiC抵抗体膜にろう付されたTi
もしくはZrを電極として用いる点にある。Means for Solving the Problems The technical means of the present invention for solving the above-mentioned problems is to use Ti soldered to the SiC resistor film with eutectic silver solder.
Alternatively, Zr can be used as an electrode.
作 用
本発明は上述したように、硝子などの絶縁性材
料を含まない材料で電極を構成しているので、
SiC抵抗体膜と電極との間で大きな接触抵抗は発
生しない。また、共晶銀ろうの融点は約780℃で
あるので、650〜700℃の高温中でも電極として安
定に作用する。Function As described above, in the present invention, since the electrode is made of a material that does not contain an insulating material such as glass,
No large contact resistance occurs between the SiC resistor film and the electrode. Furthermore, since the melting point of eutectic silver solder is approximately 780°C, it functions stably as an electrode even at high temperatures of 650 to 700°C.
実施例
第１図は本発明の薄膜サーミスタの一実施例を
示す断面図である。平板状アルミナ基板１の一方
の表面上にSiC抵抗体膜２を形成した。このの
ち、共晶銀ろう箔３とTi箔４とをこの順序でSiC
抵抗体膜２上に一対配置し、真空中で800820℃に
加熱した。この真空中加熱により、Ti箔３はSiC
抵抗体膜２にろう付された。Embodiment FIG. 1 is a sectional view showing an embodiment of the thin film thermistor of the present invention. A SiC resistor film 2 was formed on one surface of a flat alumina substrate 1. After this, eutectic silver solder foil 3 and Ti foil 4 are attached to SiC in this order.
A pair of them were placed on the resistor film 2 and heated to 800,820°C in vacuum. By this heating in vacuum, the Ti foil 3 becomes SiC
It was brazed to the resistor film 2.
真空中加熱ののち、Ti箔４とSiC抵抗体膜２の
間の化学組成を分析したところ、SiC抵抗体膜２
の表面に微量のTi原子が存在し、つづいてAg，
Cu，Tiの合金層を介してTi箔４がろう付されて
いることが明らかになつた。このことから、真空
加熱中に溶融した共晶銀ろう中をTi原子がSiC抵
抗体膜２に向つて拡散し、SiC抵抗体膜２の表面
でTi原子が化学的に吸着される過程によりTi箔
４がSiC抵抗体膜２にろう付されると考えられ
る。 After heating in vacuum, the chemical composition between the Ti foil 4 and the SiC resistor film 2 was analyzed, and it was found that the SiC resistor film 2
There is a trace amount of Ti atoms on the surface, followed by Ag,
It became clear that the Ti foil 4 was brazed through the Cu and Ti alloy layer. From this, Ti atoms diffuse into the eutectic silver solder melted during vacuum heating toward the SiC resistor film 2, and as a result of the process in which the Ti atoms are chemically adsorbed on the surface of the SiC resistor film 2, the Ti atoms It is assumed that the foil 4 is brazed to the SiC resistor film 2.
このようにして形成した本発明の薄膜サーミス
タと従来の薄膜サーミスタを空気中600℃中に約
100H放置試験した。試験前後の抵抗値の周波数
特性を次表に示す。 The thin film thermistor of the present invention formed in this way and the conventional thin film thermistor were placed in air at 600°C.
A 100H standing test was conducted. The frequency characteristics of the resistance value before and after the test are shown in the table below.
■■■ 亀の甲 ［0002］ ■■■
同表から明らかなように、従来の薄膜サーミス
タは、試験後、周波数が高くなるにつれて抵抗値
が大巾に減少した。これは容量性インピーダンス
の大きいことを示す。従来の薄膜サーミスタは図
２に示す構造を有することを考えると、試験後の
従来薄膜サーミスタの容量性インピーダンスは、
SiC抵抗体膜２とAu−Pt電極膜５の界面に存在
すると考えられる。他方、本発明の薄膜サーミス
タは試験後でも抵抗の周波数特性を殆んど示さな
かつた。これは、本発明の薄膜サーミスタは高温
放置試験によりTi箔電極４とSiC抵抗体膜２の電
気的接触が影響を受けないことを示す。■■■ Turtle Shell [0002] ■■■ As is clear from the same table, the resistance value of the conventional thin film thermistor decreased significantly as the frequency increased after the test. This indicates a large capacitive impedance. Considering that the conventional thin film thermistor has the structure shown in Figure 2, the capacitive impedance of the conventional thin film thermistor after the test is:
It is thought that it exists at the interface between the SiC resistor film 2 and the Au-Pt electrode film 5. On the other hand, the thin film thermistor of the present invention showed almost no resistance frequency characteristics even after the test. This shows that in the thin film thermistor of the present invention, the electrical contact between the Ti foil electrode 4 and the SiC resistor film 2 is not affected by the high temperature storage test.
なお、Ti箔４の代りにZr箔４を用いても同様
の効果が得られた。 Note that the same effect was obtained even when Zr foil 4 was used instead of Ti foil 4.
発明の効果
以上述べてきたように本発明の薄膜サーミスタ
によれば次に示す効果が得られる。Effects of the Invention As described above, the thin film thermistor of the present invention provides the following effects.
(1) SiC抵抗体膜にTi箔をろう付して電極を構成
しているので、すなわち電極は導電性材料のみ
で構成され、絶縁性材料を含まないので、高温
下でもSiC抵抗体膜と電極との接触は安定であ
る。(1) Since the electrode is constructed by brazing Ti foil onto the SiC resistor film, in other words, the electrode is composed only of conductive material and does not contain any insulating material, so it can be used even under high temperatures. Contact with the electrode is stable.
(2) 薄膜サーミスタを実用する場合、電極にリー
ド線を溶接する必要がある。本発明の薄膜サー
ミスタの電極はTi箔であるので、従来のAu−
Pt厚膜電極膜に比べると、リード線の溶接は
容易であり、また溶接部の安定性が高い。(2) When putting thin film thermistors into practical use, it is necessary to weld lead wires to the electrodes. Since the electrodes of the thin film thermistor of the present invention are Ti foil, they are different from the conventional Au-
Compared to Pt thick film electrode films, lead wire welding is easier and the welded area is more stable.
第１図は本発明の一実施例を示す薄膜サーミス
タの断面図、第２図は従来の一実施例を示す薄膜
サーミスタの断面図である。
１……平板状絶縁性基板、２……SiC抵抗体
膜、３……共晶銀ろう、４……TiあるいはZr、
５……Au−Pt厚膜電極膜。
FIG. 1 is a cross-sectional view of a thin film thermistor showing an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a thin film thermistor showing a conventional example. 1... Flat insulating substrate, 2... SiC resistor film, 3... Eutectic silver solder, 4... Ti or Zr,
5...Au-Pt thick film electrode film.
Claims (1)
の一方の表面に形成された炭化硅素抵抗体膜と一
対の電極から成り、この一対の電極が共晶銀ろう
で前記炭化硅素抵抗体膜にろう付されたチタンも
しくはジルコニウムで構成された薄膜サーミス
タ。1 Consists of a flat insulating substrate, a silicon carbide resistor film formed on one surface of the flat insulating substrate, and a pair of electrodes, and the pair of electrodes is connected to the silicon carbide resistor film using eutectic silver solder. Thin film thermistor constructed of titanium or zirconium soldered to
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60116910A JPS61276202A (en) | 1985-05-30 | 1985-05-30 | thin film thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60116910A JPS61276202A (en) | 1985-05-30 | 1985-05-30 | thin film thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61276202A JPS61276202A (en) | 1986-12-06 |
| JPH0342682B2 true JPH0342682B2 (en) | 1991-06-28 |
Family
ID=14698670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60116910A Granted JPS61276202A (en) | 1985-05-30 | 1985-05-30 | thin film thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61276202A (en) |
-
1985
- 1985-05-30 JP JP60116910A patent/JPS61276202A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61276202A (en) | 1986-12-06 |
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