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JPH0346884B2 - - Google Patents
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JPH0346884B2 - - Google Patents

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Publication number
JPH0346884B2
JPH0346884B2 JP23238985A JP23238985A JPH0346884B2 JP H0346884 B2 JPH0346884 B2 JP H0346884B2 JP 23238985 A JP23238985 A JP 23238985A JP 23238985 A JP23238985 A JP 23238985A JP H0346884 B2 JPH0346884 B2 JP H0346884B2
Authority
JP
Japan
Prior art keywords
magnetic
sensor gap
gap
yoke
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP23238985A
Other languages
Japanese (ja)
Other versions
JPS6292219A (en
Inventor
Kazuhiro Sato
Wataru Fujisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Victor Company of Japan Ltd
Original Assignee
Victor Company of Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Victor Company of Japan Ltd filed Critical Victor Company of Japan Ltd
Priority to JP23238985A priority Critical patent/JPS6292219A/en
Publication of JPS6292219A publication Critical patent/JPS6292219A/en
Publication of JPH0346884B2 publication Critical patent/JPH0346884B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127Structure or manufacture of heads, e.g. inductive
    • G11B5/33Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3916Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
    • G11B5/3919Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
    • G11B5/3922Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
    • G11B5/3925Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は強磁性薄膜からなる磁気抵抗効果素子
を用いた磁気ヘツドに係り、特に磁気ヨークによ
つて信号磁束を磁気抵抗効果素子に導く磁気ヨー
ク型の磁気抵抗効果型薄膜磁気ヘツドに関する。
Detailed Description of the Invention (Industrial Application Field) The present invention relates to a magnetic head using a magnetoresistive element made of a ferromagnetic thin film, and particularly relates to a magnetic head that uses a magnetoresistive element made of a ferromagnetic thin film, and in particular a magnetic head that uses a magnetic yoke to guide signal magnetic flux to the magnetoresistive element. This invention relates to a yoke type magnetoresistive thin film magnetic head.

(従来の技術) 従来、強磁性薄膜からなる磁気抵抗効果素子
(以下、MR素子と称す)を利用した磁気抵抗効
果型薄膜磁気ヘツド(以下、MR薄膜ヘツドと称
す)は、コイルを利用した電磁誘導型薄膜磁気ヘ
ツドと比較すると、磁気テープ低速走行時におけ
る再生感度は高く、しかも、狭トラツク化が容易
なことから高密度磁気記録におけるマルチトラツ
ク磁気ヘツドとして利用されている。この種の
MR薄膜ヘツドとしては、従来、MR素子を磁気
テープ摺動面に直接露出させた、いわゆるシール
ド型及びノン・シールド型と称されるものと、磁
気ヨークを用いて磁束を内部のMR素子に導く、
いわゆるヨーク型がある。
(Prior art) Conventionally, magnetoresistive thin-film magnetic heads (hereinafter referred to as MR thin-film heads) that utilize magnetoresistive elements (hereinafter referred to as MR elements) made of ferromagnetic thin films are electromagnetic heads that utilize coils. Compared to the induction type thin film magnetic head, the reproduction sensitivity when the magnetic tape runs at low speed is high, and the track can be easily narrowed, so it is used as a multi-track magnetic head in high-density magnetic recording. this kind of
Conventional MR thin-film heads include the so-called shielded type and non-shielded type, in which the MR element is directly exposed on the sliding surface of the magnetic tape, and the magnetic yoke that guides the magnetic flux to the internal MR element. ,
There is a so-called yoke type.

第6図は従来のヨーク型によるMR薄膜ヘツド
の断面図を示す。同図において、1は従来のMR
薄膜ヘツドであり、2はMn−Znフエライトある
いは、Ni−Znフエライト等からなる磁性基板で、
磁気テープ摺動面である壁面2aとこの壁面2a
に対して略垂直な平面2bとを有している。
FIG. 6 shows a sectional view of a conventional yoke type MR thin film head. In the figure, 1 is the conventional MR
It is a thin film head, and 2 is a magnetic substrate made of Mn-Zn ferrite or Ni-Zn ferrite.
The wall surface 2a that is the sliding surface of the magnetic tape and this wall surface 2a
The plane 2b is substantially perpendicular to the plane 2b.

3は、例えば、SiO2等の磁気的及び電気的絶
縁膜からなる磁気ギヤツプで、既知の薄膜形成手
段によつて磁性基板2の平面2bの上に設けられ
る。
Reference numeral 3 denotes a magnetic gap made of a magnetically and electrically insulating film such as SiO2 , which is provided on the flat surface 2b of the magnetic substrate 2 by known thin film forming means.

4は後記するMR素子にバイアス磁界を与える
ための導体で、Al,Al−Cu,Mo等の金属から
なる。
4 is a conductor for applying a bias magnetic field to the MR element to be described later, and is made of metal such as Al, Al-Cu, Mo, etc.

5は導体4を覆う如く設けたAl2O3あるいは
SiO2からなる電気絶縁膜である。
5 is Al 2 O 3 or Al 2 O 3 provided so as to cover the conductor 4.
It is an electrical insulating film made of SiO 2 .

6はNi−Fe、Ni−Co等の薄膜からなるMR素
子で、電気絶縁膜5を介して導体4上に設けられ
る。
Reference numeral 6 denotes an MR element made of a thin film of Ni--Fe, Ni--Co, etc., which is provided on the conductor 4 with an electrical insulating film 5 interposed therebetween.

7はMR素子6を絶縁するためのAl2O3あるい
はSiO2からなる電気絶縁膜である。
Reference numeral 7 denotes an electrical insulating film made of Al 2 O 3 or SiO 2 for insulating the MR element 6 .

8は電気絶縁膜3,5,7を介して導体4上に
設けられる前方磁気ヨークであり、その一端部8
aは磁気ギヤツプ3aを介して磁性基板2と対峙
しており、壁面2aと共にテープ摺動面の一部8
bを形成するとともに、紙面に対してほぼ垂直方
向に図示しない記録トラツク幅相当のコア幅を有
している。
8 is a front magnetic yoke provided on the conductor 4 via the electrical insulating films 3, 5, and 7;
a faces the magnetic substrate 2 through the magnetic gap 3a, and is part of the tape sliding surface 8 along with the wall surface 2a.
b, and has a core width equivalent to the width of a recording track (not shown) in a direction substantially perpendicular to the plane of the paper.

9は前方磁気ヨーク8同様、電気絶縁膜3,
5,7を介して導体4上に設けられる後方磁気ヨ
ークであり、その一端部9aは前方磁気ヨーク8
の他端部8cと共にMR素子6に磁束を供給する
ためのセンサーギヤツプSGを構成するとともに、
他端部9bは磁性基板2の平面2b上に接続され
ている。上記の構成から、前方磁気ヨーク8、セ
ンサーギヤツプSG、後方磁気ヨーク9、磁性基
板2及び磁気ギヤツプ3aからなる1つの磁気閉
回路Sを考えることが出来、導体4とMR素子6
はこの磁気閉回路Sの中に配設されている。
Similar to the front magnetic yoke 8, 9 is an electrical insulating film 3,
It is a rear magnetic yoke provided on the conductor 4 via 5 and 7, and its one end 9a is connected to the front magnetic yoke 8.
Together with the other end 8c, it constitutes a sensor gap SG for supplying magnetic flux to the MR element 6, and
The other end 9b is connected to the flat surface 2b of the magnetic substrate 2. From the above configuration, it is possible to consider one magnetic closed circuit S consisting of the front magnetic yoke 8, the sensor gap SG, the rear magnetic yoke 9, the magnetic substrate 2, and the magnetic gap 3a, and the conductor 4 and the MR element 6.
is arranged in this magnetic closed circuit S.

上述の如く、前方磁気ヨーク8と後方磁気ヨー
ク9は段差を有する絶縁膜7の上に設けられるた
め、これらの磁気ヨーク8,9には急勾配を有す
る段差d1,d2等が生じている。
As mentioned above, since the front magnetic yoke 8 and the rear magnetic yoke 9 are provided on the insulating film 7 having a step, steps d 1 , d 2 etc. having a steep slope are generated in these magnetic yokes 8 and 9. There is.

上記の構成において、テープ摺動面2a,8b
上を走行する図示しない磁気テープからの信号磁
束は壁面2aと前方磁気ヨーク8のテープ摺動面
の一部8bとをそれぞれ始端あるいは終端とする
磁気閉回路S内を流れるが、このとき、センサー
ギヤツプSGを通る磁束の一部が漏洩磁束となつ
てMRG素子中を流れるから、磁束の変化による
MR素子の抵抗値の変化は既知の電気回路を経て
出力電圧の変化、すなわち再生出力として外部に
取り出される。
In the above configuration, the tape sliding surfaces 2a, 8b
A signal magnetic flux from a magnetic tape (not shown) running above flows in a magnetic closed circuit S whose starting and ending points are the wall surface 2a and a portion 8b of the tape sliding surface of the front magnetic yoke 8, respectively. A part of the magnetic flux passing through the SG becomes leakage magnetic flux and flows through the MRG element, so due to changes in magnetic flux.
A change in the resistance value of the MR element is outputted to the outside as a change in output voltage, that is, a reproduction output, through a known electric circuit.

この時、導体4には、MR素子6の抵抗変化率
が最も大きくなるようなバイアス磁界を与える電
流が与えられる。
At this time, a current is applied to the conductor 4 to provide a bias magnetic field that maximizes the rate of change in resistance of the MR element 6.

上述した従来のヨーク型MR薄膜ヘツドの問題
点としては、 (1) 前方及び後方磁気ヨーク8,9のパターンを
フオトエツチングによつて絶縁膜7上に形成す
る際、絶縁膜7は導体4の上に設けられている
ため凹凸部を有しており、この上に設けられる
前方及び後方磁気ヨーク8,9のパターンはこ
れにより段差d1,d2を生じる結果、上記パター
ンを精度よく形成することが出来ない。
The problems with the conventional yoke-type MR thin film head described above are: (1) When forming the patterns of the front and rear magnetic yokes 8 and 9 on the insulating film 7 by photo-etching, the insulating film 7 is attached to the conductor 4; The pattern of the front and rear magnetic yokes 8 and 9 provided on top of the magnetic yokes 8 and 9 has an uneven portion, and as a result, the pattern of the front and rear magnetic yokes 8 and 9 that is provided on top of the magnetic yokes 8 and 9 creates steps d 1 and d 2 , and as a result, the above-mentioned pattern is formed with high precision. I can't do that.

(2) 前方及び後方磁気ヨーク8,9の段差d1,d2
等の部分は磁気特性、特に透磁率μが劣化する
傾向があり、その結果、磁気ヘツドとしてその
再生効率の低下をもたらす。
(2) Steps d 1 and d 2 between the front and rear magnetic yokes 8 and 9
The magnetic properties, especially the magnetic permeability μ, tend to deteriorate in these parts, resulting in a decrease in the reproducing efficiency of the magnetic head.

(3) 図示しない平坦な保護基板を前方及び後方磁
気ヨーク8,9の表面上に接着剤を介して設
け、耐摩耗性に富んだ磁気ヘツドを構成する場
合、段差d1及びd2のために生じた接着層はテー
プの走行によつて摩耗しやすく、また摩耗によ
つて生じた凹みにはゴミが付きやすくなる結
果、スペーシングロスを引き起し、再生出力を
低下させる等の問題点があつた。
(3) When a flat protective substrate (not shown) is provided on the surfaces of the front and rear magnetic yokes 8 and 9 via adhesive to form a highly wear-resistant magnetic head, the steps d 1 and d 2 The adhesive layer formed on the tape is easily abraded as the tape runs, and the dents caused by abrasion tend to attract dust, causing problems such as spacing loss and reduced playback output. It was hot.

(問題点を解決するための手段) 本発明は上記問題点を解決するためになされた
ものであり、第1の発明として磁気テープ摺動面
となる壁面と、この壁面に対してほぼ垂直に形成
した平面とを有する磁性基板を設け、上記壁面を
含む平面上に平坦部を有する切欠部を形成し、バ
イアス磁界を与えるための導体と、磁気抵抗効果
素子に磁束を与えるためのセンサーギヤツプを有
する磁気ヨークとを、それぞれ電気絶縁膜として
磁気ギヤツプとなるべき電気絶縁膜を介して、上
記磁性基板の平面と同一高さとなる如く、かつ、
上記センサーギヤツプがこの平面上に露出する如
く構成して設けてなり、上記磁気抵抗効果素子を
上記センサーギヤツプの露出面の近傍に配設した
ことを特徴とする磁気抵抗効果型薄膜磁気ヘツド
を、第2の発明として磁気テープ摺動面となる壁
面と、この壁面に対してほぼ垂直に形成した平面
とを有する磁性基板を設け、上記壁面を含む平面
上に平坦部を有する切欠部を形成し、バイアス磁
界を与えるための導体と、磁気抵抗効果素子に磁
束を与えるための第1のセンサーギヤツプを有す
る第1の磁気ヨークとを、それぞれ電気絶縁膜と
磁気ギヤツプとなるべき電気絶縁膜を介して、上
記磁性基板の平面と同一高さとなる如く、かつ、
上記センサーギヤツプがこの平面上に露出する如
く構成して設け、更に第2のセンサーギヤツプを
有する第2の磁気ヨークを上記第1のセンサーギ
ヤツプを覆う如く設け、上記磁気抵抗効果素子を
上記第2のセンサーギヤツプの近傍に設けたこと
を特徴とする磁気抵抗効果型薄膜磁気ヘツドを提
供しようとするものである。
(Means for Solving the Problems) The present invention has been made to solve the above-mentioned problems, and the first invention includes a wall surface serving as a sliding surface for a magnetic tape, and a wall surface substantially perpendicular to the wall surface. a magnetic substrate having a flat surface formed thereon, a cutout portion having a flat portion formed on the plane including the wall surface, a conductor for applying a bias magnetic field, and a sensor gap for applying magnetic flux to the magnetoresistive element. and the magnetic yoke through electrical insulating films that are to become magnetic gaps, respectively, so as to be at the same height as the plane of the magnetic substrate, and
A second magnetoresistive thin film magnetic head, characterized in that the sensor gap is configured to be exposed on this plane, and the magnetoresistive element is disposed near the exposed surface of the sensor gap. In this invention, a magnetic substrate having a wall surface serving as a sliding surface for a magnetic tape and a plane formed almost perpendicular to the wall surface is provided, a cutout portion having a flat portion is formed on the plane including the wall surface, and a bias A conductor for applying a magnetic field and a first magnetic yoke having a first sensor gap for applying magnetic flux to the magnetoresistive element are connected to each other through an electrically insulating film and an electrically insulating film to serve as a magnetic gap, respectively. so that it is at the same height as the plane of the magnetic substrate, and
A second magnetic yoke having a second sensor gap is provided so as to cover the first sensor gap, and the magnetoresistive element is connected to the second sensor gap. It is an object of the present invention to provide a magnetoresistive thin film magnetic head which is characterized in that it is provided nearby.

(実施例) 第1図は本発明になるヨーク型MR薄膜ヘツド
の第1実施例を示す一部欠截斜視図であり、MR
薄膜ヘツドを複数個設けた場合を示す。第2図は
第1図の−線に沿う要部断面図である。
(Embodiment) FIG. 1 is a partially cutaway perspective view showing a first embodiment of a yoke type MR thin film head according to the present invention.
This figure shows the case where multiple thin film heads are provided. FIG. 2 is a sectional view of a main part taken along the - line in FIG. 1.

以下、第1図,第2図を用いて説明する。 This will be explained below using FIGS. 1 and 2.

図中、10は本発明になるMR薄膜ヘツドであ
る。11は、例えばMn−Znフエライトからなる
磁性基板であり、磁気テープの摺動面12となる
壁面11aとこの壁面11aに対してほぼ垂直方
向に形成した平面11bとを有している。
In the figure, 10 is an MR thin film head according to the present invention. Reference numeral 11 denotes a magnetic substrate made of, for example, Mn--Zn ferrite, and has a wall surface 11a serving as the sliding surface 12 of the magnetic tape and a flat surface 11b formed substantially perpendicular to the wall surface 11a.

13は壁面11aを含む平面11bに設けられ
た切欠部であり、壁面11aに対してほぼ垂直な
長方形状の平坦面13aを有している。
A notch 13 is provided in a plane 11b that includes the wall surface 11a, and has a rectangular flat surface 13a that is substantially perpendicular to the wall surface 11a.

14は、例えばSiO2等からなる絶縁膜で、切
欠部13の内壁上に設けられ、後記する導体17
と切欠部13の内壁との電気的絶縁の役割を果す
ものである。
Reference numeral 14 denotes an insulating film made of SiO 2 or the like, which is provided on the inner wall of the notch 13, and is connected to a conductor 17 to be described later.
It plays the role of electrical insulation between the inner wall of the cutout 13 and the inner wall of the notch 13.

15は、例えば、センダスト等の軟磁性膜から
なる前方磁気ヨークであり、上記壁面11aと共
に形成されるテープ摺動面15aと磁性基板11
の平面11bと同一高さを有する前方平面部15
bを有している。
Reference numeral 15 denotes a front magnetic yoke made of a soft magnetic film such as Sendust, which connects the tape sliding surface 15a formed together with the wall surface 11a and the magnetic substrate 11.
A front plane part 15 having the same height as the plane 11b of
It has b.

16は後方磁気ヨークであり、前方磁気ヨーク
15と同じ材料で、しかもこれと対向する如く切
欠部13の内部に設けられており、前方磁気ヨー
ク15と同様、平面11bと同一高さの後方平面
部16aを有している。前方及び後方磁気ヨーク
15,16は切欠部13の内部に電気絶縁膜14
a〜14c等を介して必要な磁気ヘツドの数だけ
設けられる。
Reference numeral 16 denotes a rear magnetic yoke, which is made of the same material as the front magnetic yoke 15, and is provided inside the notch 13 so as to face it.Similarly to the front magnetic yoke 15, the rear magnetic yoke has a rear plane at the same height as the plane 11b. It has a section 16a. The front and rear magnetic yokes 15 and 16 have an electrical insulating film 14 inside the notch 13.
A required number of magnetic heads are provided via a to 14c, etc.

なお、電気絶縁膜14aは磁気ギヤツプの機能
を有するものである。
Note that the electrical insulating film 14a has a magnetic gap function.

17はMR素子18にバイアス磁界を与えるた
めの導体で、例えばAlなどの金属からなり、前
方及び後方磁気ヨーク15,16とは絶縁膜14
を介して電気的及び磁気的に絶縁されて切欠部1
3の内部に設けられており、その上面17aは磁
気ヨーク15,16と同様、磁性基板11平面1
1bと同一高さを有している。
17 is a conductor for applying a bias magnetic field to the MR element 18, and is made of metal such as Al, and the front and rear magnetic yokes 15 and 16 are connected to the insulating film 14.
The notch 1 is electrically and magnetically insulated through the
Similar to the magnetic yokes 15 and 16, its upper surface 17a is provided inside the magnetic substrate 11 plane 1.
It has the same height as 1b.

19は前方磁気ヨーク15の平面部15bと後
方磁気ヨーク16の平面部16aとがギヤツプ長
W1を隔て対向することにより形成されるセンサ
ーギヤツプであり、センサーギヤツプ19の間に
は絶縁膜14c,14d及び導体17が介在して
いる。
19, the flat part 15b of the front magnetic yoke 15 and the flat part 16a of the rear magnetic yoke 16 have a gap length.
The sensor gap 19 is formed by facing each other with W 1 in between, and insulating films 14c and 14d and a conductor 17 are interposed between the sensor gap 19.

第2図に示す第1図の−線に沿う要部断面
図において、センサーギヤツプ19を示すが、同
図から明らかな如く、センサーギヤツプ19は上
方より下方が広くなつている。20は平面11b
と同一高さの平面を有する磁気ヨーク15,16
及び導体17上に設けられた、例えばSiO2等か
らなる絶縁膜である。MR素子18は、例えばNi
−Feの薄膜からなり、幅Pを有する磁束検出部
18aと、この磁束検出部18aに延在して設け
られる接続部18b,18cとからなり、これら
接続部18b,18cにはそれぞれリード19
a,19bが設けられている。幅Pを有する磁束
検出部18aはフラツトな平面を有する絶縁膜2
0を介して幅W1を有するセンサーギヤツプ19
上に設けられる。
The sensor gap 19 is shown in the main part sectional view taken along the - line in FIG. 1 shown in FIG. 2, and as is clear from the figure, the sensor gap 19 is wider at the bottom than at the top. 20 is the plane 11b
magnetic yokes 15, 16 having planes at the same height as
and an insulating film made of, for example, SiO 2 provided on the conductor 17. The MR element 18 is made of, for example, Ni
It consists of a magnetic flux detecting section 18a made of a thin film of -Fe and having a width P, and connecting sections 18b and 18c extending from this magnetic flux detecting section 18a.
a, 19b are provided. The magnetic flux detection part 18a having a width P is formed by an insulating film 2 having a flat plane.
Sensor gap 19 with width W 1 through 0
provided above.

本実施例ではW1=3〜4μm、P=2〜3μm程
度の値を用いているが、これらの具体的数値は仕
様によつて異なつてくることは言うまでもない。
In this embodiment, values of W 1 =3 to 4 μm and P = about 2 to 3 μm are used, but it goes without saying that these specific values vary depending on the specifications.

上述の如く、本発明の構成において、従来の構
成と最も異なる点は、前方磁気ヨーク15と後方
磁気ヨーク16のフラツトな平面15b,16a
によつて作られるセンサーギヤツプ19上にMR
素子18を配設した点である。言いかえるなら
ば、磁気ヨーク15,16とは磁性基板11等に
より作られる磁気閉回路21の外部にMR素子1
8を設けた点である。
As mentioned above, the configuration of the present invention is most different from the conventional configuration in that the front magnetic yoke 15 and the rear magnetic yoke 16 have flat planes 15b and 16a.
MR on the sensor gap 19 made by
This is the point where the element 18 is arranged. In other words, the magnetic yokes 15 and 16 are the MR elements 1 outside the magnetic closed circuit 21 made of the magnetic substrate 11 etc.
This is the point where the number 8 was set.

上記の構成における作用は前記の従来例と同様
のため説明は省略する。
The operation of the above configuration is similar to that of the prior art example, so a description thereof will be omitted.

第3図a〜fは本発明になる第1図に示す第1
の実施例の製造工程説明図であり、第1図の−
線に沿う断面図に基づいて説明するものであ
る。
Figures 3a to 3f are the first diagrams shown in Figure 1 that constitute the present invention.
FIG. 1 is a manufacturing process explanatory diagram of an example of FIG.
The explanation will be based on a cross-sectional view taken along a line.

以下、同図に従つて、製造工程を説明する。 The manufacturing process will be described below with reference to the same figure.

第3図aにおいて、31は上面にフラツトな平
面31aを有する磁性基板である。
In FIG. 3a, 31 is a magnetic substrate having a flat plane 31a on its upper surface.

32は平面31に形成した溝部であり、溝部3
2の底部32aは平面31aとほぼ平行で滑らか
な平面を有している。上記溝部32を形成する方
法としては、フオト・リソグラフイに依つて基板
面のレジスト部を溝部32だけ除去したのち、リ
ン酸等の液を用いてエツチングする方法がある。
32 is a groove formed in the plane 31;
The bottom part 32a of 2 has a smooth plane that is substantially parallel to the plane 31a. As a method for forming the grooves 32, there is a method in which only the grooves 32 are removed from the resist portion on the substrate surface by photolithography, and then etched using a liquid such as phosphoric acid.

上記溝部32の底部32aには、後記する如
く、磁気ギヤツプを設けるため滑らかである必要
があるが、エツチング方法としてアルゴン等の不
活性ガスを用いたイオン・ミーリング法を用いる
とエツチング面を滑らかにすることが出来る。
As will be described later, the bottom 32a of the groove 32 needs to be smooth because it is provided with a magnetic gap, but if an ion milling method using an inert gas such as argon is used as an etching method, the etching surface can be made smooth. You can.

次に第3図bに示すようにAl2O3,SiO2等の電
気絶縁体33をスパツタ、蒸着等の手段によつて
上記溝部32を有する磁性基板31上に堆積させ
る。
Next, as shown in FIG. 3b, an electrical insulator 33 such as Al 2 O 3 or SiO 2 is deposited on the magnetic substrate 31 having the groove portion 32 by means such as sputtering or vapor deposition.

続いて、Al、Mo等の非磁性金属体35を電気
絶縁体33上に堆積させた後、フオト・リソグラ
フイによつて形成したセンサーギヤツプパターン
34をマスクとして非磁性金属体35をエツチン
グする。
Subsequently, after depositing a non-magnetic metal material 35 such as Al or Mo on the electrical insulator 33, the non-magnetic metal material 35 is etched using the sensor gap pattern 34 formed by photolithography as a mask. do.

この時、湿式エツチング法を用いると電気絶縁
体33をエツチングのストツパーとすることが出
来、点線で示す非磁性金属部からなる導体35a
を得る。
At this time, if a wet etching method is used, the electrical insulator 33 can be used as an etching stopper, and the conductor 35a made of a non-magnetic metal part shown by the dotted line
get.

その後、センサーギヤツプパターンをマスクと
してエツチングによつて得られた非磁性金属部3
5aをマスクとして電気絶縁体33を除去する
が、この電気絶縁体33が、例えば、SiO2によ
つて設けられている時は、CF4によるプラズマエ
ツチングが利用出来、磁性基板31をエツチング
のストツパーとすることが出来る。
After that, the non-magnetic metal part 3 obtained by etching the sensor gap pattern as a mask.
The electrical insulator 33 is removed using 5a as a mask. When the electrical insulator 33 is made of SiO 2 , for example, plasma etching with CF4 can be used, and the magnetic substrate 31 is used as an etching stopper. You can.

上記の如く、電気的絶縁体33を介して磁性基
板31の溝部32の中に設けられた非磁性金属部
35aからフオトレジストからなるセンサーギヤ
ツプパターン34を剥離したのち、第3図cで示
す如く、前記磁気ギヤツプ14aとなるべき電気
絶縁膜36を堆積したのち、磁気ヨーク15,1
6となるべき、例えば、センダスト等の軟磁性膜
37を電気絶縁膜36上に堆積させる。その後、
堆積させた軟磁性膜37と電気絶縁膜36の大部
分(破線38まで)を研磨によつて除去すること
により、第3図dに示す研磨面39を有する基板
40が得られる。37a,37bはそれぞれ前方
及び後方磁気ヨークであり、35aはバイアス電
流を与える導体である。
As described above, after the sensor gap pattern 34 made of photoresist is peeled off from the non-magnetic metal part 35a provided in the groove part 32 of the magnetic substrate 31 via the electrical insulator 33, as shown in FIG. As shown, after depositing the electrical insulating film 36 that will become the magnetic gap 14a, the magnetic yokes 15, 1
A soft magnetic film 37 made of, for example, Sendust is deposited on the electrical insulating film 36. after that,
By removing most of the deposited soft magnetic film 37 and electrical insulating film 36 (up to the broken line 38) by polishing, a substrate 40 having a polished surface 39 shown in FIG. 3d is obtained. 37a and 37b are front and rear magnetic yokes, respectively, and 35a is a conductor that provides a bias current.

次に、第3図eに示す如く、基板40の研磨面
39にはSiO2等からなる電気絶縁膜41を堆積
し、更にその上に例えばNi−FeからなるMR素
子42をスパツタ手段等を用いて形成する。その
後、破線43に沿つて基板40の端部44を切断
すると磁気ギヤツプ36aが現われ、第1図及び
第2図に示すヨーク型のMR薄膜ヘツド10と同
等なMR薄膜ヘツド50が得られる。
Next, as shown in FIG. 3e, an electrical insulating film 41 made of SiO 2 or the like is deposited on the polished surface 39 of the substrate 40, and an MR element 42 made of, for example, Ni-Fe is deposited thereon by sputtering means or the like. Form using. Thereafter, the end portion 44 of the substrate 40 is cut along the broken line 43 to reveal the magnetic gap 36a, and an MR thin film head 50 equivalent to the yoke type MR thin film head 10 shown in FIGS. 1 and 2 is obtained.

第3図fは第3図eにおけるMR素子42を有
する平面上にSiO2等からなる保護膜45と接着
層46を介して保護基板47を設けたMR薄膜ヘ
ツドの例を示すものであるが、MR素子42の厚
みは0.01〜0.06μm程度と薄いため接着層46に
は段差が生じないことが分る。
FIG. 3f shows an example of an MR thin film head in which a protective substrate 47 is provided on the plane having the MR element 42 in FIG. 3e via a protective film 45 made of SiO 2 or the like and an adhesive layer 46. , it can be seen that since the thickness of the MR element 42 is as thin as about 0.01 to 0.06 μm, no step is formed in the adhesive layer 46.

上述の如く、本発明によれば磁気ヨークのパタ
ーンを形成する際、段差が少ないためこのパター
ンを精度よく構成することが出来、また、軟磁性
膜を堆積したのち、研磨によつて得られる磁気ヨ
ークにも段差が生じないため、磁気特性の劣化は
生じない。保護基板を磁気ヨーク面に接着して耐
摩耗性に富んだ磁気ヘツドを構成した場合にも段
差がないため接着層を薄くすることが出来、接着
層の摩耗の影響を受けないMR薄膜ヘツドの製造
を可能とするものである。
As described above, according to the present invention, when forming the pattern of the magnetic yoke, the pattern can be formed with high accuracy because there are few steps, and the magnetic yoke obtained by polishing after depositing the soft magnetic film can be formed with high precision. Since there is no step in the yoke, there is no deterioration in magnetic properties. Even when a highly wear-resistant magnetic head is constructed by bonding a protective substrate to the magnetic yoke surface, there is no step, so the adhesive layer can be made thinner, making the MR thin-film head unaffected by adhesive layer wear. This makes manufacturing possible.

第4図及び第5図はそれぞれ本発明になる第2
及び第3の実施例の断面図であり、センサーギヤ
ツプを精度よくMR素子の近くに形成することを
目的としている。
FIG. 4 and FIG. 5 respectively show the second embodiment of the present invention.
and FIG. 9 is a cross-sectional view of a third embodiment, the purpose of which is to form a sensor gap accurately near an MR element.

第4図において、60は第2の実施例である
MR薄膜ヘツドである。61はセンダスト等の磁
性薄膜からなる第2の磁気ヨークであり、第1図
に示すMR薄膜ヘツド10において、電気絶縁膜
20の一部を除去した前方磁気ヨーク15および
後方磁気ヨーク16を磁気的に結合する如く両ヨ
ーク15,16上に設けると共に、SiO2等から
なる電気絶縁膜62を介してMR素子18a上に
設ける。
In FIG. 4, 60 is the second embodiment.
It is an MR thin film head. Reference numeral 61 denotes a second magnetic yoke made of a magnetic thin film such as Sendust, which magnetically connects the front magnetic yoke 15 and rear magnetic yoke 16 from which part of the electrical insulating film 20 has been removed in the MR thin film head 10 shown in FIG. It is provided on both yokes 15 and 16 so as to be coupled to each other, and also provided on the MR element 18a via an electrical insulating film 62 made of SiO 2 or the like.

63は第2の磁気ヨーク61に設けらた第2の
センサーギヤツプであるが、上記のパターン方法
を用いることにより、ギヤツプ長W2を有する第
2のセンサーギヤツプを精度よくMR素子18a
上に形成することが可能となる。
Reference numeral 63 denotes a second sensor gap provided on the second magnetic yoke 61, and by using the above patterning method, the second sensor gap having a gap length W 2 can be precisely aligned with the MR element 18a.
It becomes possible to form on the top.

第5図において、70は第3の実施例である
MR薄膜ヘツドである。71はセンダスト等の磁
性薄膜からなる第2の磁気ヨークであり、第3図
dに示す基板40の研磨面39の導体35a上に
ギヤツプ長W3を有するセンサーギヤツプ72を
形成する如く設けられる。
In FIG. 5, 70 is the third embodiment.
It is an MR thin film head. Reference numeral 71 designates a second magnetic yoke made of a magnetic thin film such as sendust, and is provided so as to form a sensor gap 72 having a gap length W3 on the conductor 35a of the polished surface 39 of the substrate 40 shown in FIG. 3d.

73は第2の磁気ヨーク71上に設けられる
SiO2等からなる電気絶縁膜であり、74は電気
絶縁膜73を介してセンサーギヤツプ72上に設
けられるMR素子である。
73 is provided on the second magnetic yoke 71
It is an electrical insulating film made of SiO 2 or the like, and 74 is an MR element provided on the sensor gap 72 via the electrical insulating film 73.

この構成においては、センサーギヤツプ長W3
を精度よく形成出来ると共に第2の磁気ヨーク7
1は第4図の第2の磁気ヨーク61に比較して表
面の凹凸を少なく出来るため、磁気ヨーク61構
成する軟磁性膜の磁気特性が表面の凹凸に極めて
敏感な場合には有利となる効果を有している。
In this configuration, the sensor gap length W 3
The second magnetic yoke 7 can be formed with high precision.
1 has less surface irregularities than the second magnetic yoke 61 shown in FIG. have.

(発明の効果) 以上の如く、本発明になる磁気抵抗効果型薄膜
磁気ヘツドは、平面部を有する磁性基板の平面上
に溝部を設け、この溝部の内部に、センサーギヤ
ツプを有し強磁性薄膜からなる磁気ヨークと、セ
ンサーギヤツプにバイアス磁束を与える導体とを
埋設すると共に、これらの高さが磁性基板の平面
部と同一高さを有する如く研磨による同一平面を
構成し、この同一平面上に露出したセンサーギヤ
ツプの近傍にMR素子を設けたことにより、 (1) 磁気ヨークは段差による磁気特性の劣化を受
けず、再生効率の優れたMR薄膜ヘツドの製造
を可能とする。
(Effects of the Invention) As described above, the magnetoresistive thin film magnetic head according to the present invention has a groove section provided on the plane of a magnetic substrate having a plane section, and a sensor gap formed inside the groove section, which is made of a ferromagnetic thin film. A magnetic yoke and a conductor that provides a bias magnetic flux to the sensor gap are buried, and the same plane is formed by polishing so that the height of these is the same as that of the flat part of the magnetic substrate, and the exposed part on this same plane is buried. By providing the MR element near the sensor gap, (1) the magnetic yoke is not subject to deterioration of magnetic properties due to differences in level, making it possible to manufacture an MR thin-film head with excellent reproduction efficiency;

(2) 保護基板を構成する際、磁気ヨーク面に接着
した磁気ヘツドを同一平面となつているため、
テープ摺動部の接着層を薄くすることが出来る
から、テープ走行による摩耗の影響を受けない
MR薄膜ヘツドの製造を可能とする。
(2) When configuring the protection board, the magnetic head bonded to the magnetic yoke surface is on the same plane.
The adhesive layer on the tape sliding part can be made thinner, so it is not affected by wear caused by tape running.
Enables the production of MR thin film heads.

また、前記同一平面上に第2のセンサーギヤ
ツプを有する第2の磁気ヨークを設け、この第
2のセンサーギヤツプの近傍にMR素子を構成
することにより、 (3) 精度の高いセンサーギヤツプとMR素子との
構成を可能とし、製造上バラツキの少ないMR
薄膜ヘツドの製造を可能とする等の効果を有す
るものである。
Furthermore, by providing a second magnetic yoke having a second sensor gap on the same plane and configuring the MR element near the second sensor gap, (3) A highly accurate configuration of the sensor gap and MR element can be achieved. MR with less manufacturing variation
This has effects such as making it possible to manufacture thin film heads.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明になるヨーク型MR薄膜ヘツド
の第1実施例を示す一部欠截斜視図、第2図は第
1図の−線に沿う要部断面図、第3図a〜e
は本発明になるヨーク型MR薄膜ヘツドの実施例
の製造工程説明図、第3図fは、第3図eにおい
て、MR素子42を有する平面上に保護膜等を介
して保護基板を設けて構成したMR薄膜ヘツドの
断面図、第4図及び第5図はそれぞれ本発明にな
る第2及び第3の実施例を示す断面図、第6図は
従来のヨーク型による磁気抵抗効果型薄膜磁気ヘ
ツドの断面図である。 11……磁性基板、11a……壁面、11b…
…平面、12……磁気テープ摺動部、13……切
欠部、14,20……電気絶縁膜、15,37a
……前方磁気ヨーク、16,37b……後方磁気
ヨーク、17……導体、18,42,74……磁
気抵抗効果素子(MR素子)、19……センサー
ギヤツプ、61,71……第2の磁気ヨーク、6
3……第2のセンサーギヤツプ。
FIG. 1 is a partially cutaway perspective view showing a first embodiment of a yoke type MR thin film head according to the present invention, FIG. 2 is a cross-sectional view of main parts taken along the line - in FIG. 1, and FIGS. 3 a to e
3 is an explanatory diagram of the manufacturing process of the embodiment of the yoke type MR thin film head according to the present invention, and FIG. 4 and 5 are cross-sectional views showing the second and third embodiments of the present invention, respectively, and FIG. 6 is a cross-sectional view of the constructed MR thin-film head, and FIG. 6 is a cross-sectional view showing the conventional yoke type magnetoresistive thin film head. FIG. 3 is a sectional view of the head. 11...Magnetic substrate, 11a...Wall surface, 11b...
...Plane, 12...Magnetic tape sliding part, 13...Notch, 14, 20...Electric insulating film, 15, 37a
...Front magnetic yoke, 16, 37b... Rear magnetic yoke, 17... Conductor, 18, 42, 74... Magnetoresistive element (MR element), 19... Sensor gap, 61, 71... Second magnetism York, 6
3...Second sensor gap.

Claims (1)

【特許請求の範囲】 1 磁気テープ摺動面となる壁面と、この壁面に
対してほぼ垂直に形成した平面とを有する磁性基
板を設け、上記壁面を含む平面上に平坦部を有す
る切欠部を形成し、バイアス磁界を与えるための
導体と、磁気抵抗効果素子に磁束を与えるための
センサーギヤツプを有する磁気ヨークとを、それ
ぞれ電気絶縁膜と磁気ギヤツプとなるべき電気絶
縁膜を介して、上記磁性基板の平面と同一高さと
なる如く、かつ、上記センサーギヤツプがこの平
面上に露出する如く構成して設けてなり、上記磁
気抵抗効果素子を上記センサーギヤツプの露出面
の近傍に配設したことを特徴とする磁気抵抗効果
型薄膜磁気ヘツド。 2 磁気テープ摺動面となる壁面と、この壁面に
対してほぼ垂直に形成した平面とを有する磁性基
板を設け、上記壁面を含む平面上に平坦部を有す
る切欠部を形成し、バイアス磁界を与えるための
導体と、磁気抵抗効果素子に磁束を与えるための
第1のセンサーギヤツプを有する第1の磁気ヨー
クとを、それぞれ電気絶縁膜と磁気ギヤツプとな
るべき電気絶縁膜を介して、上記磁性基板の平面
と同一高さとなる如く、かつ、上記センサーギヤ
ツプがこの平面上に露出する如く構成して設け、
更に第2のセンサーギヤツプを有する第2の磁気
ヨークを上記第1のセンサーギヤツプを覆う如く
設け、上記磁気抵抗効果素子を上記第2のセンサ
ーギヤツプの近傍に設けたことを特徴とする磁気
抵抗効果型薄膜磁気ヘツド。
[Claims] 1. A magnetic substrate having a wall surface serving as a sliding surface for the magnetic tape and a flat surface formed substantially perpendicular to the wall surface, and a cutout portion having a flat portion on the flat surface including the wall surface. A conductor for applying a bias magnetic field and a magnetic yoke having a sensor gap for applying magnetic flux to the magnetoresistive element are connected to the magnetic substrate through an electrical insulating film and an electrical insulating film to serve as the magnetic gap, respectively. The sensor gap is arranged so as to be at the same height as a plane, and the sensor gap is exposed on this plane, and the magnetoresistive element is disposed near the exposed surface of the sensor gap. Magnetoresistive thin film magnetic head. 2. A magnetic substrate having a wall surface serving as a sliding surface for the magnetic tape and a flat surface formed almost perpendicular to the wall surface is provided, a cutout portion having a flat portion is formed on the flat surface including the wall surface, and a bias magnetic field is applied. A conductor for supplying magnetic flux to the magnetoresistive element and a first magnetic yoke having a first sensor gap for supplying magnetic flux to the magnetoresistive element are connected to the magnetic substrate through an electrical insulating film and an electrical insulating film to serve as a magnetic gap, respectively. The sensor gap is configured and provided so as to be at the same height as a plane, and the sensor gap is exposed on this plane,
A magnetoresistive thin film magnet, further comprising: a second magnetic yoke having a second sensor gap so as to cover the first sensor gap; and the magnetoresistive element provided near the second sensor gap. Head.
JP23238985A 1985-10-18 1985-10-18 Magneto-resistance effect type thin film magnetic head Granted JPS6292219A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23238985A JPS6292219A (en) 1985-10-18 1985-10-18 Magneto-resistance effect type thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23238985A JPS6292219A (en) 1985-10-18 1985-10-18 Magneto-resistance effect type thin film magnetic head

Publications (2)

Publication Number Publication Date
JPS6292219A JPS6292219A (en) 1987-04-27
JPH0346884B2 true JPH0346884B2 (en) 1991-07-17

Family

ID=16938469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23238985A Granted JPS6292219A (en) 1985-10-18 1985-10-18 Magneto-resistance effect type thin film magnetic head

Country Status (1)

Country Link
JP (1) JPS6292219A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY111205A (en) * 1993-03-22 1999-09-30 Onstream Inc Method of manufacturing a thin-film magnetic head
EP0617410B1 (en) * 1993-03-22 1999-09-22 OnStream, Inc. Method of manufacturing a thin-film magnetic head, and magnetic head obtainable by means of said method
SG44041A1 (en) * 1993-03-22 1997-11-14 Koninkl Philips Electronics Nv Method of manufacturing a thin-film magnetic head and magnetic head obtainable by means of said method
BE1006925A3 (en) * 1993-03-22 1995-01-24 Koninkl Philips Electronics Nv Method for constructing a thin film magnetic head and magnetic headconstructed according to the method
BE1007992A3 (en) * 1993-12-17 1995-12-05 Philips Electronics Nv Method for manufacturing a dunnefilmmagneetkop solenoid and manufactured by the method.

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