JPH0350975B2 - - Google Patents
Info
- Publication number
- JPH0350975B2 JPH0350975B2 JP59027684A JP2768484A JPH0350975B2 JP H0350975 B2 JPH0350975 B2 JP H0350975B2 JP 59027684 A JP59027684 A JP 59027684A JP 2768484 A JP2768484 A JP 2768484A JP H0350975 B2 JPH0350975 B2 JP H0350975B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chip
- infrared rays
- paste
- conductive paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/72—Investigating presence of flaws
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
(発明の利用分野)
本発明はダイボンド接着状態の検出方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Application of the Invention) The present invention relates to a method for detecting the state of die bond adhesion.
(発明の背景)
IC、LSIなどのチツプを基板にダイボンドする
時、基板上に予め銀ペーストなどの接着剤を塗布
しておかなければならない。自動機においては、
量産無人方式であるので、所定の位置にペースト
が塗布されない場合がある。(Background of the Invention) When die-bonding chips such as ICs and LSIs to a substrate, an adhesive such as silver paste must be applied to the substrate in advance. In automatic machines,
Since it is an unmanned mass-produced method, the paste may not be applied to the predetermined location.
従来、ペースト塗布の有無の検出は、ペースト
供給のシリンジ側と基板間に高電圧を加え、その
導通の有無により検出する方法がとられている。
しかし、ハイブリツドICのように、基板が絶縁
体よりなるセラミツクの場合は、導通試験を行う
ことができない。 Conventionally, the presence or absence of paste application has been detected by applying a high voltage between the syringe side of the paste supply and the substrate, and detecting the presence or absence of continuity.
However, if the substrate is a ceramic insulator, such as a hybrid IC, continuity testing cannot be performed.
従来、前記のように検出不可能なハイブリツド
ICのダイボンド接着状態の検出は、チツプを破
壊除去してペーストの痕跡を調べる破壊試験によ
る方法しかなく、自動機に組込み全数検査するこ
とはできない。即ち、抜き取りにより、チツプ溶
解、剥しによつて検査しなければならなく、作業
性及び信頼性に乏しいという欠点があつた。 Conventionally, hybrids that cannot be detected as described above
The only way to detect the die-bond adhesion state of an IC is to perform a destructive test to remove the chip and check for traces of paste, and it is not possible to install it into an automatic machine and conduct a 100% inspection. That is, inspection must be performed by sampling, dissolving the chips, and peeling them off, resulting in poor workability and reliability.
(発明の目的)
本発明の目的は、チツプ及び基板がどのような
ものであつてもダイボンドの接着状態を無接触非
破壊で瞬時に検出できるダイボンド接着状態の検
出方法を提供することにある。(Objective of the Invention) An object of the present invention is to provide a method for detecting the state of die bond adhesion that can instantly detect the state of adhesion of the die bond in a non-contact, non-destructive manner, regardless of the type of chip and substrate.
(発明の実施例)
以下、本発明の一実施例を第1図により説明す
る。ダイボンドにより、基板1に予め銀などの導
電性ペースト或は金箔2などを置き、その上にチ
ツプ3を置き、導電ペーストなど2の熱硬化など
でチツプ3が接着される。(Embodiment of the Invention) An embodiment of the present invention will be described below with reference to FIG. By die bonding, a conductive paste such as silver or gold foil 2 is placed on the substrate 1 in advance, and the chip 3 is placed on top of it, and the chip 3 is bonded by heat curing of the conductive paste or the like.
このように半導体部品の基板1の下方に赤外線
放射器10を配設し、この赤外線放射器10に対
向してチツプ3の上方に集光レンズ11による光
学系と、この焦点像を検出する検出器12を配設
する。 In this way, the infrared radiator 10 is disposed below the substrate 1 of the semiconductor component, and an optical system including a condenser lens 11 is provided above the chip 3 facing the infrared radiator 10, and a detection system for detecting the focal image of the infrared radiator 10 is provided. A container 12 is arranged.
そこで、赤外線放射器10によつて赤外線を放
射し、この赤外線を基板1、導電ペーストなど
2、チツプ3を透過させる。赤外線の透過率は被
透過物の材質によつて異なるので、基板1のみの
部分20、基板1とチツプ3の部分21、基板1
と導電ペーストなど2とチツプ3の部分22で透
過率が異なる。例えば基板1がセラミツクで、チ
ツプ3がシリコンである場合、波長が1〜8μmの
赤外線では両方1,3とも殆んど素通しとなる。
しかし、導電ペーストなど2は銀、金などの金属
であるので、赤外線を吸収、反射して透過率は小
さい。 Therefore, an infrared ray radiator 10 emits infrared rays, and the infrared rays are transmitted through the substrate 1, the conductive paste 2, and the chip 3. Since the transmittance of infrared rays differs depending on the material of the object to be transmitted, the portion 20 of only the substrate 1, the portion 21 of the substrate 1 and the chip 3, the portion 21 of the substrate 1
The transmittance is different between the conductive paste 2 and the chip 3 portion 22. For example, when the substrate 1 is made of ceramic and the chip 3 is made of silicon, both 1 and 3 are almost transparent to infrared rays having a wavelength of 1 to 8 μm.
However, since the conductive paste 2 is made of metal such as silver or gold, it absorbs and reflects infrared rays and has a low transmittance.
この半導体部品を透過した赤外線は集光レンズ
11により集光され、その焦点像を検出器12に
よつて検出される。この検出器12の電気信号1
2aはデータ処理され、デイスプレイに画像とし
て表示及びリミツト信号として出力される。 The infrared rays transmitted through this semiconductor component are condensed by a condenser lens 11, and a focused image thereof is detected by a detector 12. Electrical signal 1 of this detector 12
Data 2a is processed, displayed as an image on a display, and output as a limit signal.
前記の如く、22の部分は20,21の部分よ
り赤外線の透過量は小さいので、検出器12で捕
捉した映像は第2図のように表われる。これによ
り、導電ペーストなど2が存在するか、あるいは
存在して適当な面積形状をもつか、その良否を瞬
間に検出することができる。また無接触非破壊で
瞬時に検出できるので、ダイボンデイングのライ
ン上に組込み全数検査することもできる。 As mentioned above, since the amount of infrared rays transmitted through the portion 22 is smaller than that of the portions 20 and 21, the image captured by the detector 12 appears as shown in FIG. Thereby, it is possible to instantly detect whether the conductive paste 2 exists or whether it exists and has an appropriate area shape. In addition, since it can be detected instantly in a non-contact and non-destructive manner, it can be installed on the die bonding line for 100% inspection.
なお、上記実施例においては、赤外線放射器1
0を下方に配置し、集光レンズ11、検出器12
を上方に配置したが、逆に配置してもよい。 In addition, in the above embodiment, the infrared radiator 1
0 is placed below, a condensing lens 11, a detector 12
Although they are placed above, they may be placed in the opposite direction.
(発明の効果)
以上の説明から明らかな如く、本発明によれ
ば、ダイボンダの接着状態を無接触非破壊方式で
瞬時に検出できると共に、ダイボンデイングのラ
イン上で容易に検出することもできる。(Effects of the Invention) As is clear from the above description, according to the present invention, the bonding state of a die bonder can be instantly detected in a non-contact, non-destructive manner, and can also be easily detected on the die bonding line.
第1図は本発明の一実施例を示す原理説明図、
第2図は第1図の方法で得られた映像を原理的に
示した図である。
1……基板、2……導電ペースト、3……チツ
プ、10……赤外線放射器、12……検出器。
FIG. 1 is a principle explanatory diagram showing an embodiment of the present invention;
FIG. 2 is a diagram showing the principle of an image obtained by the method of FIG. 1. DESCRIPTION OF SYMBOLS 1...Substrate, 2...Conductive paste, 3...Chip, 10...Infrared radiator, 12...Detector.
Claims (1)
ボンドされた半導体部品の一方側より赤外線を放
射し、半導体部品を透過した赤外線の量的な差を
半導体部品の他方側に配設した検出器で検出し、
前記導電性ペーストなどの分布状態の良否を検出
することを特徴とするダイボンド接着状態の検出
方法。1. Infrared rays are emitted from one side of a semiconductor component whose chip is bonded to a substrate via conductive paste, etc., and a detector placed on the other side of the semiconductor component detects the quantitative difference in the amount of infrared rays transmitted through the semiconductor component. detect,
A method for detecting a die bond adhesion state, comprising detecting whether the distribution state of the conductive paste or the like is good or bad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59027684A JPS60171441A (en) | 1984-02-16 | 1984-02-16 | Detection of die bond adhesive state |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59027684A JPS60171441A (en) | 1984-02-16 | 1984-02-16 | Detection of die bond adhesive state |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60171441A JPS60171441A (en) | 1985-09-04 |
| JPH0350975B2 true JPH0350975B2 (en) | 1991-08-05 |
Family
ID=12227790
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59027684A Granted JPS60171441A (en) | 1984-02-16 | 1984-02-16 | Detection of die bond adhesive state |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60171441A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0210256A (en) * | 1988-06-29 | 1990-01-16 | Ishikawajima Kensa Keisoku Kk | Method for detecting flaw in ceramic board |
| US5228776A (en) * | 1992-05-06 | 1993-07-20 | Therma-Wave, Inc. | Apparatus for evaluating thermal and electrical characteristics in a sample |
| DE102015122733A1 (en) * | 2015-12-23 | 2017-06-29 | Bundesdruckerei Gmbh | Inspection apparatus and method for verifying an adhesive bond |
| JPWO2022264773A1 (en) * | 2021-06-16 | 2022-12-22 |
-
1984
- 1984-02-16 JP JP59027684A patent/JPS60171441A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60171441A (en) | 1985-09-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110299299A (en) | High-density packages chip failure localization method based on manual wire binding machine | |
| US6395580B1 (en) | Backside failure analysis for BGA package | |
| CA2405859A1 (en) | Top illuminated opto-electronic devices integrated with micro-optics and electronic integrated circuits | |
| US6069366A (en) | Endpoint detection for thinning of silicon of a flip chip bonded integrated circuit | |
| JP2005122059A (en) | Inspection device | |
| KR100294128B1 (en) | Test method for a bonding pad on a semiconductor chip | |
| US6405359B1 (en) | Method for backside failure analysis requiring simple bias conditions | |
| JPH0350975B2 (en) | ||
| US6822315B2 (en) | Apparatus and method for scribing semiconductor wafers using vision recognition | |
| US10381504B2 (en) | Wafer level packaging, optical detection sensor and method of forming same | |
| US20110169478A1 (en) | Laser Optical Path Detection | |
| US7931849B2 (en) | Non-destructive laser optical integrated circuit package marking | |
| CN109084903B (en) | Infrared focal plane detector pixel failure detection method | |
| US6407564B1 (en) | Universal BGA board for failure analysis and method of using | |
| JPH0444945B2 (en) | ||
| CN106653638B (en) | System and method for detecting cold joint of semiconductor packaging product | |
| JP2004128414A (en) | Failure analyzing method for semiconductor device | |
| US20250067598A1 (en) | Method of manufacturing a spectrometer device | |
| JP2967774B2 (en) | Semiconductor device failure analysis method and failure analysis device | |
| JPH05152401A (en) | Bump shape inspection device | |
| JPS59143338A (en) | Semiconductor integrated circuit device | |
| CN100382310C (en) | Electronic package comprising optoelectronic device and integrated circuit | |
| JPS63164232A (en) | Manufacture of temperature sensor integrated circuit | |
| KR910007108A (en) | Pattern Detection and Bonding Method for Semiconductor Components | |
| JPH11176868A (en) | Wire bonding equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |