JPH0351119B2 - - Google Patents
Info
- Publication number
- JPH0351119B2 JPH0351119B2 JP57227221A JP22722182A JPH0351119B2 JP H0351119 B2 JPH0351119 B2 JP H0351119B2 JP 57227221 A JP57227221 A JP 57227221A JP 22722182 A JP22722182 A JP 22722182A JP H0351119 B2 JPH0351119 B2 JP H0351119B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- plate
- ceramic
- metal plate
- component mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
- Laminated Bodies (AREA)
- Ceramic Products (AREA)
- Structure Of Printed Boards (AREA)
Description
【発明の詳細な説明】
［発明の技術分野］
本発明は、ジヤイアントトランジスターモジユ
ール用基板やスイツチング電源モジユール用基板
などの半導体モジユール用基板等として使用され
る、反りのないセラミツクスと金属との接合体に
関する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a combination of warp-free ceramics and metal used as substrates for semiconductor modules such as giant transistor module substrates and switching power supply module substrates. Concerning zygotes.
［発明の技術的背景とその問題点］
近年、セラミツク板に銅等の金属板を接合させ
た半導体モジユール用基板が知られている。[Technical background of the invention and its problems] In recent years, semiconductor module substrates in which a metal plate such as copper is bonded to a ceramic plate have been known.
このようなセラミツクスと金属との接合体の製
造は従来、セラミツク板をメタライズ処理するこ
とにより行われていたが、近年、この方法に代つ
てセラミツク板に金属板を接触させ、加熱して直
接セラミツク板と金属板とを接合する方法が検討
されるようになつてきている。 Conventionally, manufacturing of such a bonded body of ceramic and metal was carried out by metallizing a ceramic plate, but in recent years, instead of this method, a metal plate is brought into contact with a ceramic plate, heated, and the ceramic plate is directly formed. Methods of joining plates and metal plates are being studied.
しかしながら、この方法ではセラミツク板の片
面のみに金属板を接合させるとセラミツク板と金
属板との熱膨張差により基板に反りが生じたり、
また接合させる金属板の板厚が厚いとセラミツク
板が割れたりするという問題があつた。 However, with this method, if the metal plate is bonded to only one side of the ceramic plate, the substrate may warp due to the difference in thermal expansion between the ceramic plate and the metal plate.
Furthermore, if the metal plates to be joined are thick, there is a problem that the ceramic plates may crack.
また、半導体モジユール用基板として使用する
場合、部品搭載の半田付けの際に基板に反りが生
ずるという問題もあつた。 Furthermore, when used as a substrate for a semiconductor module, there was a problem in that the substrate warped during soldering for mounting components.
［発明の目的］
本発明はこのような問題を解消するためなされ
たもので、セラミツク板への金属板の接合の際、
あるいは部品搭載側のための半田付けの際に基板
の反りや割れ等がなく、また放熱性や耐電圧特性
の改善された半導体モジユール用基板として有用
なセラミツクスと金属との接合体を提供すること
を目的とする。[Object of the Invention] The present invention was made to solve such problems, and when joining a metal plate to a ceramic plate,
Another object of the present invention is to provide a ceramic-metal bonded body that is useful as a substrate for semiconductor modules, which does not cause warping or cracking of the substrate during soldering on the component mounting side, and has improved heat dissipation and withstand voltage characteristics. With the goal.
［発明の概要］
すなわち本発明のセラミツクスと金属との接合
体は、セラミツク板の両面に、セラミツク板の板
厚より薄い板厚の金属板を接触配置させた状態で
加熱し接合させてなることを特徴とする。[Summary of the invention] That is, the ceramic-metal bonded body of the present invention is obtained by heating and bonding metal plates having a thickness thinner than that of the ceramic plate in contact with both sides of the ceramic plate. It is characterized by
［発明の実施例］ 次に本発明の実施例について説明する。[Embodiments of the invention] Next, examples of the present invention will be described.
第１図は本発明の一実施例の断面図、第２図ａ
は第１図の上面図、第２図ｂは第１図の底面図で
ある。 Fig. 1 is a sectional view of an embodiment of the present invention, Fig. 2a
is a top view of FIG. 1, and FIG. 2b is a bottom view of FIG.
図において符号１は板厚Ｔが約0.5〜1.0mmのア
ルミナ、窒化アルミニウム等のセラミツク板であ
り、そのセラミツク板１の両面に板厚t1，t2の
銅、アルミニウム等の金属板２ａ，２ｂが配置さ
れ、加熱により接合されている。 In the figure, reference numeral 1 denotes a ceramic plate made of alumina, aluminum nitride, etc. with a plate thickness T of about 0.5 to 1.0 mm, and metal plates 2a made of copper, aluminum, etc. with plate thicknesses t 1 and t 2 on both sides of the ceramic plate 1. 2b are arranged and joined by heating.
しかして、本発明においてはセラミツク板の板
厚Ｔが金属板２ａ，２ｂの板厚t1，t2より大き
く、また金属板のうち板厚の厚い方に部品３を搭
載するのが好ましい。セラミツク板の板厚を金属
板の板厚より厚くした理由は、セラミツク板と金
属板の熱膨張差が大きいためにセラミツク板の板
厚を金属板より薄くすると加熱接合後の金属板の
収縮、あるいは部品搭載時の半田付けの際の加熱
等により基板に反りが生じたり、セラミツク板に
クラツクが生じてしまうことによる。また部品搭
載側の金属板の板厚を他方の金属板の板厚より厚
くするのは部品搭載側の金属板の板厚が薄いと半
田付けの際に反りが生ずる理由による。 Therefore, in the present invention, it is preferable that the thickness T of the ceramic plate is larger than the thicknesses t 1 and t 2 of the metal plates 2a and 2b, and that the component 3 is mounted on the thicker one of the metal plates. The reason why the thickness of the ceramic plate is made thicker than that of the metal plate is that the difference in thermal expansion between the ceramic plate and the metal plate is large, so if the thickness of the ceramic plate is made thinner than the metal plate, the metal plate will shrink after heat bonding. Alternatively, the board may warp due to heating during soldering when components are mounted, or cracks may occur in the ceramic board. The reason why the metal plate on the component mounting side is made thicker than the other metal plate is because if the metal plate on the component mounting side is thin, warping occurs during soldering.
さらにまた、反りを防止するために、部品搭載
側の金属板すなわちパターンの形成された金属板
２ａの面積が第２図ａ，ｂに見られるように、も
う一方の金属板２ｂの面積の50％以上とし、また
このもう一方の金属板２ｂにスリツト４を形成す
るのが望ましい。また部品搭載側の金属板におい
て、部品搭載部分を他の部分より厚くすれば熱伝
導が良くなり、熱抵抗が小さくなるので好まし
い。 Furthermore, in order to prevent warping, the area of the metal plate 2a on the component mounting side, that is, the metal plate 2a on which the pattern is formed, is 50% larger than the area of the other metal plate 2b, as shown in FIGS. 2a and 2b. % or more, and it is desirable to form the slit 4 in the other metal plate 2b. Further, in the metal plate on the component mounting side, it is preferable to make the component mounting part thicker than other parts because heat conduction will be improved and thermal resistance will be reduced.
さらにまた、耐電圧特性を改善するために、部
品搭載側の金属板のかどに第２図ａに示すよう
に、アールをつけるのが望ましい。アールは0.1
mmアール以上が好ましい。また、金属板表面の結
晶粒の大きさを10〜1000μｍすなわち表面の凹凸
を５〜15μｍにすれば粒界が少なくなり、電気抵
抗が小さくなるので好ましい。 Furthermore, in order to improve the withstand voltage characteristics, it is desirable to round the corners of the metal plate on the component mounting side as shown in FIG. 2a. R is 0.1
mm radius or more is preferable. Further, it is preferable to set the size of the crystal grains on the surface of the metal plate to 10 to 1000 μm, that is, to make the surface unevenness 5 to 15 μm, since grain boundaries will be reduced and electrical resistance will be reduced.
なおセラミツク板１と金属板２ａおよび２ｂと
の接合は、例えば次のようにして行なう。 The ceramic plate 1 and the metal plates 2a and 2b are bonded, for example, as follows.
すなわち、セラミツク板１の両面に金属板、例
えば酸素を100〜2000ppm含有する銅板あるいは
表面を酸化処理された銅板を配置し、不活性ガス
雰囲気、例えば窒素ガス中で1065〜1083℃で加熱
させる。あるいは酸素を含有しないあるいは酸化
処理されていない銅板を使用する場合は、酸素を
0.03〜0.1vol％を含むガス雰囲気中で加熱させる
ことにより行なう。 That is, a metal plate, such as a copper plate containing 100 to 2000 ppm of oxygen, or a copper plate whose surface has been oxidized, is placed on both sides of the ceramic plate 1, and heated at 1065 to 1083°C in an inert gas atmosphere, such as nitrogen gas. Alternatively, if using a copper plate that does not contain oxygen or has not been oxidized,
This is carried out by heating in a gas atmosphere containing 0.03 to 0.1 vol%.
［発明の効果］
このように形成されたセラミツクスと金属との
接合体は、セラミツク板にクラツクが生じること
がなく、また反りも生じることがない。さらにま
た、部分搭載のための半田付けの際に反りが生じ
ないので、半導体モジユール用基板として有効で
ある。[Effects of the Invention] The ceramic-metal bonded body formed in this way does not cause cracks or warpage in the ceramic plate. Furthermore, since no warpage occurs during soldering for partial mounting, it is effective as a substrate for semiconductor modules.
また、セラミツク板の裏面にも金属板が形成さ
れているので放熱性に優れ、特にセラミツク板に
窒化アルミニウムを使用した場合は放熱性にも優
れたものとなる。 Further, since a metal plate is formed on the back side of the ceramic plate, it has excellent heat dissipation properties, and especially when aluminum nitride is used for the ceramic plate, it has excellent heat dissipation properties.
第１図は本発明の一実施例を示す断面図、第２
図ａは第１図の上面図、第２図ｂは第１図の底面
図である。
１……セラミツク板、２ａ，２ｂ……金属板、
３……部品。
FIG. 1 is a cross-sectional view showing one embodiment of the present invention, and FIG.
Figure a is a top view of Figure 1, and Figure 2b is a bottom view of Figure 1. 1... Ceramic plate, 2a, 2b... Metal plate,
3...Parts.
Claims (1)
より薄い板厚の金属板を接触配置させた状態で加
熱し接合させてなることを特徴とするセラミツク
スと金属との接合体。 ２ セラミツクスと金属との接合体は、半導体モ
ジユール用基板である特許請求の範囲第１項記載
のセラミツクスと金属との接合体。 ３ セラミツク板の両面に接合させる金属板の板
厚を異なるようにし、板厚の厚い方の金属板上に
部品を搭載する特許請求の範囲第２項記載のセラ
ミツクスと金属との接合体。 ４ 部品搭載側の金属板の面積がもう一方の金属
板の面積の50％以上である特許請求の範囲第３項
記載のセラミツクスと金属との接合体。 ５ 部品搭載側でない金属板にはスリツトが形成
されている第３項また第４項記載のセラミツクス
と金属との接合体。 ６ 部品搭載側の金属板において、部品搭載部分
が他の部分より厚い特許請求の範囲第３項〜第５
項のいずれか１項記載のセラミツクスと金属との
接合体。 ７ 部品搭載側の金属板のかどにはアールがつけ
られている特許請求の範囲第２項〜第６項記載の
いずれか１項記載のセラミツクスと金属との接合
体。 ８ 金属板表面の結晶粒の大きさが10〜1000μｍ
である特許請求の範囲第１項〜第７項のいずれか
１項記載のセラミツクスと金属との接合体。[Scope of Claims] 1. A bonded product of ceramic and metal, characterized in that a metal plate having a thickness thinner than that of the ceramic plate is placed in contact with both sides of a ceramic plate and then heated and bonded. . 2. A joined body of ceramics and metal according to claim 1, wherein the joined body of ceramics and metal is a substrate for a semiconductor module. 3. The ceramic-metal bonded body according to claim 2, wherein the metal plates bonded to both sides of the ceramic plate have different thicknesses, and the component is mounted on the thicker metal plate. 4. The ceramic-metal bonded body according to claim 3, wherein the area of the metal plate on the component mounting side is 50% or more of the area of the other metal plate. 5. The ceramic-metal bonded body according to item 3 or 4, wherein a slit is formed in the metal plate that is not on the component mounting side. 6 In the metal plate on the component mounting side, the component mounting portion is thicker than the other portions of claims 3 to 5.
A joined body of ceramics and metal according to any one of the above items. 7. A joined body of ceramics and metal according to any one of claims 2 to 6, wherein the metal plate on the component mounting side has a rounded corner. 8 The size of crystal grains on the surface of the metal plate is 10 to 1000 μm
A joined body of ceramic and metal according to any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22722182A JPS59121890A (en) | 1982-12-28 | 1982-12-28 | Ceramic and metal bond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22722182A JPS59121890A (en) | 1982-12-28 | 1982-12-28 | Ceramic and metal bond |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59121890A JPS59121890A (en) | 1984-07-14 |
| JPH0351119B2 true JPH0351119B2 (en) | 1991-08-05 |
Family
ID=16857389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22722182A Granted JPS59121890A (en) | 1982-12-28 | 1982-12-28 | Ceramic and metal bond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59121890A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07309688A (en) * | 1994-05-18 | 1995-11-28 | Denki Kagaku Kogyo Kk | Insulating heat radiating plate |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0649622B2 (en) * | 1987-08-28 | 1994-06-29 | 株式会社東芝 | How to join ceramics and metal |
| JPS6459986A (en) * | 1987-08-31 | 1989-03-07 | Toshiba Corp | Ceramic circuit board |
| JPH0723964Y2 (en) * | 1988-11-11 | 1995-05-31 | 三菱マテリアル株式会社 | Lightweight substrate for semiconductor device |
| US5100740A (en) * | 1989-09-25 | 1992-03-31 | General Electric Company | Direct bonded symmetric-metallic-laminate/substrate structures |
| JP3011433B2 (en) * | 1990-05-25 | 2000-02-21 | 株式会社東芝 | Manufacturing method of ceramic circuit board |
| JP2642574B2 (en) * | 1992-12-17 | 1997-08-20 | 同和鉱業株式会社 | Manufacturing method of ceramic electronic circuit board |
| JP2918191B2 (en) | 1994-04-11 | 1999-07-12 | 同和鉱業株式会社 | Manufacturing method of metal-ceramic composite member |
| US5965193A (en) | 1994-04-11 | 1999-10-12 | Dowa Mining Co., Ltd. | Process for preparing a ceramic electronic circuit board and process for preparing aluminum or aluminum alloy bonded ceramic material |
| JP2007165600A (en) * | 2005-12-14 | 2007-06-28 | Omron Corp | Power module structure and solid state relay using the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5443576A (en) * | 1977-09-12 | 1979-04-06 | Fujitsu Ltd | Method of manufacturing printed board |
-
1982
- 1982-12-28 JP JP22722182A patent/JPS59121890A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07309688A (en) * | 1994-05-18 | 1995-11-28 | Denki Kagaku Kogyo Kk | Insulating heat radiating plate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59121890A (en) | 1984-07-14 |
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