JPH0351250B2 - - Google Patents
Info
- Publication number
- JPH0351250B2 JPH0351250B2 JP6684785A JP6684785A JPH0351250B2 JP H0351250 B2 JPH0351250 B2 JP H0351250B2 JP 6684785 A JP6684785 A JP 6684785A JP 6684785 A JP6684785 A JP 6684785A JP H0351250 B2 JPH0351250 B2 JP H0351250B2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum valve
- cooling
- temperature
- contact
- reheating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 82
- 238000001816 cooling Methods 0.000 claims description 78
- 238000000034 method Methods 0.000 claims description 54
- 238000003303 reheating Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 7
- 230000007423 decrease Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 25
- 239000000956 alloy Substances 0.000 description 21
- 229910045601 alloy Inorganic materials 0.000 description 19
- 238000001764 infiltration Methods 0.000 description 17
- 230000008595 infiltration Effects 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 14
- 238000005245 sintering Methods 0.000 description 12
- 229910017813 Cu—Cr Inorganic materials 0.000 description 11
- 239000000843 powder Substances 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 229910017945 Cu—Ti Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 229910001152 Bi alloy Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910017934 Cu—Te Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Landscapes
- High-Tension Arc-Extinguishing Switches Without Spraying Means (AREA)
- Manufacture Of Switches (AREA)
Description
[発明の技術分野]
本発明はCu−Cr系およびCu−Ti系合金を用い
た真空バルブ用接点材料の製造方法の改良に関す
る。
[発明の技術的背景とその問題点]
真空バルブ用接点材料に要求される特性として
は、耐溶着、耐電圧、しや断に対する各性能で示
される基本三要件とこの他に温度上昇、接触抵抗
が低く安定していることが重要な要件となつてい
る。しかしながら、これらの要件の中には相反す
るものがある関係上、単一の金属種によつて全て
の要件を満足させることは不可能である。このた
め、実用されている多くの接点材料においては、
不足する性能を相互に補えるような2種以上の元
素を組合せ、かつ大電流用あるいは高電圧用等の
ように特定の用途に適した接点材料の開発が行な
われ、それなりに優れた特性を有するものが開発
されているが、さらに強まる高耐圧化および大電
流化の要求を充分満足する充分バルブ用接点材料
は未だ得られていないのが実情である。
たとえば、大電流化を指向した接点材料とし
て、Biのような溶着防止成分を5%以下の量で
含有するCu−Bi合金が知られている(特公昭41
−12131号公報)が、Cu母相に対するBiの溶解度
が極めて低いため、しばしば偏折を生じ、しや断
後の表面荒れが大きく、加工成形が困難である等
の問題点を有している。また、大電流化を指向し
た他の接点材料として、Cu−Te合金も知られて
いる(特公昭44−23751号公報)。
この合金は、Cu−Bi系合金が持つ上記問題点
を緩和してはいるが、Cu−Bi系合金に比較して
雰囲気に対し、より敏感なため接触抵抗等の安定
性に欠ける。さらに、これらCu−Te、Cu−Bi等
の接点の共通的特徴として、耐溶着性に優れてい
るものの、耐電圧特性が従来の中電圧クラスへの
適用には充分であるとしても、これ以上高い電圧
分野への応用に対しては、必ずしも満足でないこ
とが明らかとなつてきた。
一方、高耐圧化を指向した接点材料として、
Cu(またはAg)等の高導電成分とCrとの焼結合
金が知られている。しかしながら、Cuは極めて
酸化しやすい金属であるため、粉末あるいは成形
体の管理が重要であることはいうまでもないが、
仮焼結、溶浸時の雰囲気の条件も材料特性を左右
する。例えば、仮焼結、溶浸時の温度や時間を充
分管理して得られたCu−Cr合金でも、接触抵抗
或いは温度上昇特性にばらつきや不安定性がある
のが実情であり、これらのばらつきをなくし安定
性のあるものが望まれている。
[発明の目的]
本発明は、上記事情に鑑みてなされたもので、
接触抵抗特性および温度上昇特性を安定させ得る
真空バルブ用接点材料の製造方法を提供すること
を目的とする。
[発明の概要]
本発明は、充分脱ガスされ、かつ表面が清浄化
された10〜90重量%のCr又は/及びTiよりなる
耐弧性材料と、残部がCu又は/及びAgよりなる
導電性材料とから形成される真空バルブ用材料を
焼結し溶浸材を溶浸する前工程と、この前工程で
処理された真空バルブ用材料を冷却し、かつこの
冷却過程中に前記真空バルブ用材料に対して冷却
過程の冷却温度区間800℃から400℃のうち所定温
度差間100℃を真空バルブ用材料の温度上昇特性
を改善させる冷却速度毎分0.6℃から6℃でもつ
て冷却する冷却工程とを有している。又、本発明
は前工程で処理された真空バルブ用材料を冷却
し、かつこの冷却過程中に真空バルブ用材料に対
して冷却過程の冷却温度区間800℃から400℃のう
ちいずれかの温度で真空バルブ用材料の導電率を
高くする少なくとも0.25時間だけ加熱保持する加
熱保持工程とを有している。
又、本発明は前工程で処理された真空バルブ用
材料を常温まで冷却する冷却工程と、この冷却工
程終了後にこの冷却での冷却温度区間800℃から
400℃のうちいずれかの温度で少なくとも0.25時
間真空バルブ用材料を再加熱する再加熱工程とを
有している。
さらに本発明は、前工程で処理された真空バル
ブ用材料をこの真空バルブ用材料の温度上昇特性
を改善させる冷却速度で冷却する冷却工程と、こ
の冷却工程終了後に真空バルブ用材料を冷却工程
での冷却温度区間における所定温度でもつて真空
バルブ用材料の導電率を高くする時間だけ加熱保
持する加熱保持工程と、この加熱保持工程終了後
に真空バルブ用材料を冷却工程での冷却温度区間
における所定温度でもつて再加熱する再加熱工程
とを有している。
[発明の実施例]
以下、本発明に係る真空バルブ用接点材料の製
造方法について説明する。ここで実施例の具体的
な説明前に本発明にいたるまでの経緯について簡
単に説明する。以下の説明においては、便宜上
Cu又は/及びAgよりなる導電性材料と、Cr又
は/及びTiよりなる耐弧性材料とから形成され
た真空バルブ用材料をCu−Cr系として説明する。
研究によれば、Cu−Cr系接点材料の上記不安
定性は、Cu−Cr合金中の組成の変動、Cr粒
子の粒径、粒度分布、偏析の程度、合金中に存
在する空孔の程度に依存することが判明した。そ
して、これらの解決は原料Crの選択と焼結技術
の管理が有効であることを認めたが、より一層の
安定性の維持を向上させるためには上記、、
に加えて更に細かな焼結技術の管理が必要であ
ることが判つた。すなわち、上記特性の不安定性
はCu中にわずかに含まれるCrの量の差異と相関
性があることを見出した。つまり、Cu−Cr合金
中のCu部分に含まれるCrの量をX線微小分析法
による半定量法によつて推定すると前述特性が不
安定な値を示したCu−Cr合金では、一般に0.5〜
0.2wt%の範囲にばらついているのに対し後述す
る本発明技術により、安定して特性を示すCu−
Cr合金のそれは、0.2%以下代表値として0.1%以
下を示していた。この差異はCu−Cr合金の特に
焼結又は溶浸後の熱履歴に依存することを認める
と共に、この条件を細かく管理することにより
Cu−Cr合金の導電率の改良とそのばらつき幅の
縮小化に効果が大きいことを明らかにした。な
お、ここで言う焼結又は溶浸後の熱履歴とは、実
質的に接点自体が受ける冷却速度特性で代表して
表わすことができる。すなわち接点の大きさ、炉
の特性によつてばらついている冷却速度を所定条
件に管理することを指すものである。
本発明者らは、このような好ましくない前記特
性を軽減する方法として材料の導電率特性の改良
とそのばらつき幅の縮小化の効果の寄与が、その
軽減に有効であることを確認した。すなわちCu
−Cr接点合金の製造プロセスに於いて、Cu中へ
のCr又は/及びTiの浸入を極力少なくすること
が各接点間のばらつきを少なくするために好まし
いと判つた。
次に本発明の製造方法について具体的に説明す
る。
本発明に於いて使用する原料は、充分脱ガスさ
れかつ表面に清浄化されたCrおよびTi粉の両方
またはいずれか一方からなる耐弧性材料と、Cu
およびAgの両方またはいずれか一方からなる導
電性材料とから成る。なお、これらCr、Ti、Cu、
Agの他に接点用途に応じ10%程度以下のTe、
Bi、Sbなど耐溶着性材料、W、Mo、Vなどの耐
弧性材料を補助成分として添加してもよい。Cr、
Tiの粒径は、250μmを越えると純Cu、Ag部同志
の接触の確率が高くなり溶着問題の点で好ましく
ないが、粒径の下限は、本発明方法の効果を発揮
させる上での粒径の下限は存在しなく、むしろ活
性度が増すなど取扱上で決定される。
また、接点合金を得る為の加熱条件はCu、Ag
の溶融点以下で完了する方式と、Cu、Agの溶融
点以上に加熱しこれを溶浸させる方式のいずれに
対してもその冷却過程又は冷却後に本発明方法に
よる条件を適用することによつてその効果を発揮
する。拡散速度の大きい後者の方式によつて得た
接点に対する寄与が大きい。
一方、スケルトンはCr、Tiのみよりなるスケ
ルトン及びCr、Tiにあらかじめ少量のCu、Agを
配合したスケルトンのいずれの場合であつても本
発明条件の適用による効果は同様に得られる。
なお、本発明における接触抵抗特性および温度
上昇特性は次のようにして求めている。接触抵抗
特性は、表面荒さを5μmに仕上げた直径20mmの
フラツト電極と同じ表面荒さを持つ曲率半径
100Rの凸状電極とを対向させ、両電極を開閉機
構を持つ10-5Torrの真空容器内に取付け3Kgの
荷重を与える。そして両電極間に10Aの交流を与
えたときの電位降下から接触抵抗を求める。な
お、接触抵抗値は測定回路を構成する配線材、開
閉器、測定器などの抵抗又は接触抵抗を回路定数
として含んだ値である。
一方、温度上昇特性は、上記と同じ電極条件の
電極を対向させ、10-5Torrの真空容器のなかで
接触力30Kg、開離力20Kgで400Aの電流を20回開
閉後、固定側電極の側面にあらかじめ穿つてある
直径1.5mm、深さ4mm測定穴に熱電対を挿入し測
定したものである。尚、温度値は周囲温度約25℃
を含んだものであり、かつ電極を取りつけるホル
ダーの熱容量の影響も含んだ比較値である。数値
は、試料数3個の最大と最小を示したものであ
る。
次に本発明の第1の実施例について第1表を参
照して説明する。
[Technical Field of the Invention] The present invention relates to an improvement in a method for manufacturing a contact material for a vacuum valve using a Cu-Cr alloy or a Cu-Ti alloy. [Technical background of the invention and its problems] The properties required for contact materials for vacuum valves include three basic requirements: welding resistance, voltage resistance, and shear resistance, as well as temperature rise and contact resistance. Low resistance and stability are important requirements. However, since some of these requirements are contradictory, it is impossible to satisfy all requirements with a single metal species. For this reason, in many contact materials in practical use,
Contact materials have been developed that combine two or more elements that mutually compensate for the lack of performance, and are suitable for specific applications such as large current or high voltage applications, and have reasonably excellent properties. However, the reality is that a sufficient contact material for valves that satisfies the ever-increasing demands for higher withstand voltage and larger current has not yet been obtained. For example, a Cu-Bi alloy containing less than 5% of a welding prevention component such as Bi is known as a contact material intended for large currents (Special Publications Publication No. 41).
-12131 Publication) has problems such as extremely low solubility of Bi in the Cu matrix, which often causes polarization, large surface roughness after shingling, and difficulty in processing and forming. . Further, a Cu--Te alloy is also known as another contact material intended for high current (Japanese Patent Publication No. 23751/1983). Although this alloy alleviates the above-mentioned problems of the Cu-Bi alloy, it is more sensitive to the atmosphere than the Cu-Bi alloy and therefore lacks stability in terms of contact resistance and the like. Furthermore, a common feature of these Cu-Te, Cu-Bi, etc. contacts is that they have excellent welding resistance, but even if the withstand voltage characteristics are sufficient for application to the conventional medium voltage class, It has become clear that this method is not necessarily satisfactory for applications in the field of high voltages. On the other hand, as a contact material aimed at high voltage resistance,
A sintered alloy of Cr and a highly conductive component such as Cu (or Ag) is known. However, since Cu is a metal that is extremely easily oxidized, it goes without saying that the management of the powder or compact is important.
Atmospheric conditions during preliminary sintering and infiltration also affect material properties. For example, even though Cu-Cr alloys are obtained by carefully controlling the temperature and time during pre-sintering and infiltration, there are variations and instability in contact resistance and temperature rise characteristics, and these variations can be corrected. What is desired is something that is stable and can be removed. [Object of the invention] The present invention has been made in view of the above circumstances, and
An object of the present invention is to provide a method for manufacturing a contact material for a vacuum valve that can stabilize contact resistance characteristics and temperature rise characteristics. [Summary of the Invention] The present invention provides an arc-resistant material made of 10 to 90% by weight of Cr or/and Ti which has been sufficiently degassed and whose surface has been cleaned, and a conductive material made of the balance made of Cu or/and Ag. A pre-process of sintering the vacuum valve material formed from the rubber material and infiltrating it with an infiltrant material, and cooling the vacuum valve material treated in this pre-process, and during this cooling process, the vacuum valve material is Cooling that improves the temperature rise characteristics of the vacuum valve material during the cooling temperature range of 800°C to 400°C during the cooling process by cooling the material at a cooling rate of 0.6°C to 6°C per minute. It has a process. Further, the present invention cools the vacuum valve material treated in the previous step, and during this cooling process, the vacuum valve material is heated to a temperature within the cooling temperature range of 800°C to 400°C. The method includes a heating and holding step of heating and holding for at least 0.25 hours to increase the conductivity of the vacuum valve material. In addition, the present invention includes a cooling process in which the vacuum valve material treated in the previous process is cooled to room temperature, and after the completion of this cooling process, a cooling temperature range from 800°C to 800°C.
and a reheating step of reheating the vacuum valve material at a temperature of 400°C for at least 0.25 hours. Furthermore, the present invention includes a cooling process in which the vacuum valve material treated in the previous process is cooled at a cooling rate that improves the temperature rise characteristics of the vacuum valve material, and a cooling process in which the vacuum valve material is cooled after this cooling process is completed. A heating and holding step in which the material for the vacuum valve is heated and held for a period of time to increase the conductivity of the material for the vacuum valve at a predetermined temperature in the cooling temperature range, and after this heating and holding step, the material for the vacuum valve is heated to a predetermined temperature in the cooling temperature range in the cooling step. and a reheating step of reheating the mixture. [Embodiments of the Invention] Hereinafter, a method for manufacturing a contact material for a vacuum valve according to the present invention will be described. Before specifically explaining the embodiments, the process leading up to the present invention will be briefly explained. In the following explanation, for convenience,
A vacuum valve material formed from a conductive material made of Cu or/and Ag and an arc-resistant material made of Cr or/and Ti will be described as a Cu-Cr type material. According to research, the above-mentioned instability of Cu-Cr-based contact materials is caused by compositional fluctuations in the Cu-Cr alloy, Cr particle size, particle size distribution, degree of segregation, and degree of porosity present in the alloy. It turned out to be dependent. Although these solutions were found to be effective through the selection of the raw material Cr and the control of the sintering technology, the above-mentioned steps were necessary to further improve the maintenance of stability.
In addition to this, it was found that even more detailed control of the sintering technology was required. In other words, it has been found that the instability of the above characteristics is correlated with the slight difference in the amount of Cr contained in Cu. In other words, when estimating the amount of Cr contained in the Cu portion of a Cu-Cr alloy using a semi-quantitative method using
However, by using the technology of the present invention described later, Cu-
For Cr alloys, it was 0.2% or less, with a typical value of 0.1% or less. It is recognized that this difference depends on the thermal history of the Cu-Cr alloy, especially after sintering or infiltration, and by carefully controlling this condition,
It has been shown that this method is highly effective in improving the conductivity of Cu-Cr alloys and reducing its variation. Note that the thermal history after sintering or infiltration referred to herein can be represented by the cooling rate characteristic substantially experienced by the contact point itself. In other words, it refers to controlling the cooling rate, which varies depending on the size of the contact and the characteristics of the furnace, to a predetermined condition. The present inventors have confirmed that, as a method for alleviating such undesirable characteristics, it is effective to improve the electrical conductivity characteristics of the material and to reduce the variation thereof. That is, Cu
In the manufacturing process of the -Cr contact alloy, it has been found that it is preferable to minimize the infiltration of Cr and/or Ti into Cu in order to reduce variations between contacts. Next, the manufacturing method of the present invention will be specifically explained. The raw materials used in the present invention are an arc-resistant material made of Cr and/or Ti powder that has been sufficiently degassed and whose surface has been cleaned, and Cu powder.
and a conductive material consisting of both or one of Ag and Ag. In addition, these Cr, Ti, Cu,
In addition to Ag, Te of about 10% or less depending on the contact application.
Welding-resistant materials such as Bi and Sb, arc-resistant materials such as W, Mo, and V may be added as auxiliary components. Cr,
If the particle size of Ti exceeds 250 μm, the probability of contact between pure Cu and Ag parts increases, which is undesirable in terms of welding problems. There is no lower limit for the diameter, but rather it is determined by handling, such as increasing activity. In addition, the heating conditions for obtaining contact alloys are Cu, Ag.
By applying the conditions according to the method of the present invention in the cooling process or after cooling, both the method of completing the process below the melting point of Cu and Ag and the method of infiltrating it by heating it above the melting point of Cu and Ag. Demonstrate its effectiveness. The latter method, which has a high diffusion rate, makes a large contribution to the contact point. On the other hand, the same effects can be obtained by applying the conditions of the present invention whether the skeleton is made of only Cr and Ti or a skeleton in which a small amount of Cu or Ag is mixed in advance with Cr or Ti. Note that the contact resistance characteristics and temperature rise characteristics in the present invention are determined as follows. The contact resistance characteristic is a curvature radius with the same surface roughness as a 20 mm diameter flat electrode with a surface roughness of 5 μm.
A 100R convex electrode is placed facing the electrode, and both electrodes are installed in a 10 -5 Torr vacuum chamber with an opening/closing mechanism and a load of 3 kg is applied. The contact resistance is then determined from the potential drop when a 10A alternating current is applied between the two electrodes. Note that the contact resistance value is a value that includes the resistance or contact resistance of wiring materials, switches, measuring instruments, etc. that constitute the measurement circuit as a circuit constant. On the other hand, the temperature rise characteristics were determined by placing the electrodes facing each other under the same electrode conditions as above, and applying a current of 400A 20 times with a contact force of 30Kg and a separation force of 20Kg in a 10 -5 Torr vacuum chamber. Measurements were taken by inserting a thermocouple into a measurement hole with a diameter of 1.5 mm and a depth of 4 mm that was pre-drilled on the side. Furthermore, the temperature value is based on the ambient temperature of approximately 25℃.
This is a comparative value that also includes the influence of the heat capacity of the holder to which the electrode is attached. The numerical values indicate the maximum and minimum of three samples. Next, a first embodiment of the present invention will be described with reference to Table 1.
【表】
まず、本発明の製造方法を適用する前工程とし
て、平均125μmのCrを2トン/cm2の圧力で成型
して得られた成型体をカーボン容器に収納し真空
中1000℃1時間で仮焼結を行なう。この仮焼結体
の下側にCuからなる溶浸材を配置し、この後、
真空1200℃、1時間で行なう溶浸工程に移す。次
に溶浸工程終了後、接点合金素材を1200℃より冷
却する。
さて、この冷却工程では、冷却温度区間800℃
から400℃のうち所定温度差間100℃を冷却速度毎
分0.6℃から6℃でもつて冷却し、Cu−Crの温度
上昇特性を改善させる。この方法で冷却した結果
を他の条件で冷却した結果とを比較してみると、
比較例1、2に示すように、冷却温度区間1200℃
より800℃間を3.5℃/分で冷却後700℃より500℃
の間を冷却速度80℃/分〜24℃/分で冷却する
と、後述する条件で測定した温度上昇特性が100
℃近傍に上昇(特性が悪くなる)しているのに対
し、本発明のように冷却速度6℃/分〜0.6℃/
分で冷却(効果例1、2)すると、温度上昇特性
は80℃近傍かそれ以下で前者より低い(好まし
い)ことが分る。この傾向は冷却温度区間1200℃
より800℃間の冷却速度が著しく速い40℃/分と
しても同じ状態を示す(効果例3、4、5)。更
に1200℃より800℃に冷却し、それ以降の冷却が
700℃〜500℃間(効果例6)でも有効な傾向を示
すことから、冷却温度区間800℃から400℃間を任
意に選んだ100℃の温度差間を通過する冷却速度
に依存していることを示している。また接触抵抗
特性も60μΩ近傍のグループ(効果例1〜6)と
70μΩ以上のグループ(比較例1、2)に区分さ
れ温度上昇抵抗と対応している。なお、冷却速度
が0.6℃/分より遅い場合には生産性が劣る。
約5%に相当するCuを予め74μmのTi粉に配合
し2.5トン/cm2で成形体を得て、真空中1100℃、
2時間の仮焼結して得たスケルトンの上部にCu
を配置し真空中1250℃、1時間で溶浸作業を行
う。溶浸工程終了後の冷却工程における700℃か
ら500℃までの温度区間を特に3.5℃/分(効果例
6)の冷却速度で冷却したとき同区域を24℃/分
(比較例3)の冷却速度で冷却して得たCu−Ti素
材と比較して導電率が1.35〜1.47倍向上したもの
が得た。
次に本発明の第2の実施例について第2表を参
照して説明する。[Table] First, as a pre-process to apply the manufacturing method of the present invention, Cr with an average diameter of 125 μm is molded at a pressure of 2 tons/cm 2 and the molded body obtained is stored in a carbon container and heated at 1000°C in vacuum for 1 hour. Perform preliminary sintering. An infiltration material made of Cu is placed on the underside of this pre-sintered body, and then
Move to the infiltration process, which is carried out in a vacuum at 1200°C for 1 hour. Next, after the infiltration process is completed, the contact alloy material is cooled from 1200°C. Now, in this cooling process, the cooling temperature section is 800℃.
The temperature difference between 100°C and 400°C is cooled at a cooling rate of 0.6°C to 6°C per minute to improve the temperature rise characteristics of Cu-Cr. Comparing the results of cooling with this method with the results of cooling under other conditions, we find that
As shown in Comparative Examples 1 and 2, cooling temperature section 1200℃
After cooling from 800℃ at 3.5℃/min, from 700℃ to 500℃
When cooling at a cooling rate of 80°C/min to 24°C/min between
℃ (characteristics deteriorate), whereas in the present invention, the cooling rate is 6℃/min to 0.6℃/min.
It can be seen that when cooling in minutes (Effect Examples 1 and 2), the temperature rise characteristic is around 80°C or lower, which is lower (preferable) than the former. This trend is observed in the cooling temperature range 1200℃
Even if the cooling rate between 800°C and 800°C was significantly faster at 40°C/min, the same condition was exhibited (Effect Examples 3, 4, and 5). Further cooling from 1200℃ to 800℃, and subsequent cooling
Since it shows an effective tendency even between 700℃ and 500℃ (Effect Example 6), it depends on the cooling rate that passes through the 100℃ temperature difference arbitrarily selected between the cooling temperature range 800℃ and 400℃. It is shown that. In addition, the contact resistance characteristics are similar to the group around 60 μΩ (effect examples 1 to 6).
It is divided into groups of 70μΩ or more (Comparative Examples 1 and 2), which correspond to the temperature rise resistance. Note that productivity is poor if the cooling rate is slower than 0.6°C/min. Cu equivalent to about 5% was mixed in advance with 74 μm Ti powder to obtain a molded product at 2.5 tons/cm 2 and heated at 1100°C in vacuum.
Cu is placed on the top of the skeleton obtained by pre-sintering for 2 hours.
The infiltration work is carried out in a vacuum at 1250℃ for 1 hour. In the cooling process after the infiltration process, when the temperature range from 700℃ to 500℃ was cooled at a cooling rate of 3.5℃/min (Effect Example 6), the same area was cooled at 24℃/min (Comparative Example 3). Compared to the Cu-Ti material obtained by cooling at a high speed, the conductivity was improved by 1.35 to 1.47 times. Next, a second embodiment of the present invention will be described with reference to Table 2.
【表】
この方法は、冷却温度区間800℃から400℃にお
ける所定温度でもつて真空バルブ用材料の導電率
を高くする時間すなわち少なくとも0.25時間だけ
加熱保持するものである。具体的には、平均粒径
74μmのCrをカーボン容器に自然充填し、水素中
900℃、1時間で仮焼結を行う。この仮焼結体の
上側に0.1%のBiを含有するCuからなる溶浸材を
配置した後、真空中1150℃、1時間で行う溶浸工
程に移す。次に溶浸工程の終つた接点合金素材を
1150℃より各保持温度まで13.3℃/分の速度で冷
却する。
さて、この冷却の後、所定の時間保持した各接
点片の温度上昇特性および接触抵抗特性を求め
た。これは本発明の方法が最良であることを示す
ためである。比較例4に示すように保持温度が
1000℃の場合、Cu中へのCrの固溶量が多く導電
率が20〜25%IACS程度であるのに対し効果例7、
8、9に示すように保持温度が800℃、600℃、
400℃ではCu中へのCrの固溶量の減少が主因とな
つて導電率が30%IACS近傍又はそれ以上に向上
する。また、効果例10、11に示すように保持温度
を700℃に一定として保持時間の影響を考察する
と効果例10、11のように、1〜0.25時間では30%
IACS近傍又はそれ以上の導電率を示しているの
に対して比較例5に示すように保持時間0.1時間
ではCu中へのCrの固溶状態が未だ維持されてい
ることにより導電率30%IACS以下である。温度
上昇特性も導電率の差異と対応し80℃以下のグル
ープ(効果例7〜11)と90℃以上のグループ(比
較例4、5)に区分される。また、接触抵抗特性
も同様に60μΩ以下のグループ(効果例7〜11)
と70μΩ以上のグループ(比較例4、5)に区分
された。保持温度が400℃より低い場合には一層
の長い保持時間を要するため得策でない。又、第
2表に示すCu−Ti合金においてほぼ同じCu含有
量の接点(効果例12)、(比較例6)のように保持
時間の差異で導電率、温度上昇特性、接触抵抗特
性に差がみられ、Cu−Ti合金においても本発明
効果が奏せられる。
次に本発明の第3の実施例について第3表を参
照して説明する。[Table] In this method, the vacuum valve material is heated and held at a predetermined temperature in the cooling temperature range from 800°C to 400°C for a period of time that increases the conductivity of the vacuum valve material, that is, at least 0.25 hours. Specifically, the average particle size
Naturally filling a carbon container with 74μm Cr and placing it in hydrogen
Temporary sintering is performed at 900℃ for 1 hour. After placing an infiltration material made of Cu containing 0.1% Bi on the upper side of this pre-sintered body, the infiltration process is carried out in a vacuum at 1150°C for 1 hour. Next, the contact alloy material after the infiltration process is
Cool from 1150°C to each holding temperature at a rate of 13.3°C/min. After this cooling, the temperature rise characteristics and contact resistance characteristics of each contact piece were determined after being maintained for a predetermined period of time. This is to show that the method of the present invention is the best. As shown in Comparative Example 4, the holding temperature
At 1000℃, the amount of solid solution of Cr in Cu is large, and the conductivity is about 20-25% IACS.
As shown in 8 and 9, the holding temperature is 800℃, 600℃,
At 400°C, the electrical conductivity increases to around 30% IACS or more, mainly due to a decrease in the amount of solid solution of Cr in Cu. In addition, when considering the effect of holding time with the holding temperature constant at 700℃, as shown in Effect Examples 10 and 11, 30% for 1 to 0.25 hours.
Although the conductivity is close to or higher than IACS, as shown in Comparative Example 5, when the holding time is 0.1 hour, the solid solution state of Cr in Cu is still maintained, so the conductivity is 30% IACS. It is as follows. The temperature rise characteristics also correspond to the difference in conductivity, and are divided into a group of 80°C or lower (Effect Examples 7 to 11) and a group of 90°C or higher (Comparative Examples 4 and 5). In addition, the contact resistance characteristics are also 60 μΩ or less (effect examples 7 to 11).
and 70μΩ or higher group (Comparative Examples 4 and 5). If the holding temperature is lower than 400°C, it is not a good idea because a longer holding time is required. In addition, as shown in Table 2, there are differences in electrical conductivity, temperature rise characteristics, and contact resistance characteristics due to differences in holding time, as shown in the contacts with almost the same Cu content (Effect Example 12) and (Comparative Example 6) in the Cu-Ti alloys. is observed, and the effects of the present invention are also exhibited in Cu-Ti alloys. Next, a third embodiment of the present invention will be described with reference to Table 3.
【表】
この方法は、真空バルブ用材料の冷却過程終了
後冷却温度区間400℃から800℃までのうちいずれ
かの再加熱温度で少なくとも0.25時間再加熱する
ものである。具体的に説明すると、平均粒径44μ
mのCu粉の上部にCu塊を設置し一体としてカー
ボン容器に収納し、真空中950℃、3時間の仮焼
結後、冷却せず引続き真空中125℃に昇温し1時
間の溶浸作業を行う。次に常温まで24℃/分の平
均冷却速度で冷却し接点素材を得る。
この接点素材を常温から第3表に示すように各
所定の保持温度まで再加熱したところ再加熱温度
400℃以上800℃の間での再加熱によつて、再加熱
前の導電率が26.0〜30.9%IACS程度であつたも
のがCuからのCrの析出によつて40%IACS近傍に
増加した(効果例16〜18)。しかしさらに再加熱
温度を900、1000℃に増加すると、若干の増加は
示すものの導電率は30%IACS近傍に止まつた
(比較例8〜9)。なお、比較例10に示すように再
加熱温度が200℃ではCu中からのCrの移動が未だ
十分行なわれず本実験加熱時間内では効果が認め
られなかつた。以上のことは前述したようにCu
中のCrの存在量とよく対応している。温度上昇
特性は、70℃近傍又はそれ以下のグループに分別
され、それぞれ導電率の挙動と対応している。ま
た、接触抵抗特性も同様に50μΩ近傍のグループ
(効果例16〜18)と60μΩ近傍又はそれ以上のグ
ループ(比較例8〜10)に分別され、夫々導電率
の挙動と対応している。再加熱中の保持時間は効
果例13〜15に示すように0.25時間以上ならば37%
IACS以上の導電率で70℃近傍又はそれ以上の温
度上昇特性さらに50μΩ以下の接触抵抗特性を維
持するのに対し、比較例7のように保持時間0.1
時間では十分な前記特性が得られない。
又、Cu−Ti合金に於て第3表に示すように同
じCu−Ti接点を用い再加熱処理時の保持温度が
700℃(効果例19)と1000℃(比較例11)では前
者の方が同表のように諸特性が優れ、本発明の効
果が認められた。
以上から冷却終了後の再加熱処理によつて特性
の改善が可能であるが、その温度は400℃〜800℃
の間で、かつその保持時間は0.25時間以上を要す
ることが判明した。
次に本発明の第4の実施例について第4表を参
照して説明する。[Table] In this method, after the cooling process of the vacuum valve material is completed, the material is reheated for at least 0.25 hours at a reheating temperature within the cooling temperature range of 400°C to 800°C. To explain specifically, the average particle size is 44μ
A Cu lump was placed on top of the Cu powder of m, and the whole was stored in a carbon container, and after temporary sintering at 950℃ in vacuum for 3 hours, the temperature was continued to be raised to 125℃ in vacuum without cooling, and infiltration was performed for 1 hour. do the work. Next, the contact material is obtained by cooling to room temperature at an average cooling rate of 24°C/min. When this contact material was reheated from room temperature to each predetermined holding temperature as shown in Table 3, the reheating temperature
By reheating between 400°C and 800°C, the conductivity before reheating, which was around 26.0 to 30.9% IACS, increased to around 40% IACS due to the precipitation of Cr from Cu ( Effect examples 16-18). However, when the reheating temperature was further increased to 900 and 1000°C, the conductivity remained at around 30% IACS, although it showed a slight increase (Comparative Examples 8 and 9). Note that, as shown in Comparative Example 10, when the reheating temperature was 200° C., the movement of Cr from the Cu was still insufficient, and no effect was observed within the heating time of this experiment. As mentioned above, the above applies to Cu
This corresponds well to the amount of Cr present in the sample. The temperature rise characteristics are classified into groups near or below 70°C, each corresponding to the conductivity behavior. Further, the contact resistance characteristics are similarly classified into a group around 50 μΩ (Effect Examples 16 to 18) and a group around 60 μΩ or more (Comparative Examples 8 to 10), each corresponding to the conductivity behavior. The retention time during reheating is 37% if it is 0.25 hours or more as shown in effect examples 13 to 15.
It maintains a temperature rise property near or above 70°C with a conductivity of IACS or higher, and a contact resistance property of 50 μΩ or less, while the holding time is 0.1 as in Comparative Example 7.
Time is not enough to obtain the above characteristics. In addition, for Cu-Ti alloys, as shown in Table 3, the holding temperature during reheating using the same Cu-Ti contacts is
At 700°C (Effect Example 19) and 1000°C (Comparative Example 11), the former had better properties as shown in the same table, and the effects of the present invention were recognized. From the above, it is possible to improve the characteristics by reheating after cooling, but the temperature is 400℃ to 800℃.
It was found that the retention time was more than 0.25 hours. Next, a fourth embodiment of the present invention will be described with reference to Table 4.
【表】
この製造方法は、溶浸工程終了後の真空バルブ
用材料に対して加熱保持工程および再加熱工程を
加えたものである。すなわち、149μmCr粉と同
一径のCu粉を95:5の割合で混合したものを1.5
トン/cm2で成型した真空中1150℃で仮焼結を行な
い、この後アルミナボートに0.1%のSbを含有し
たCu合金塊と共に挿入し真空中1200℃で溶浸を
行う。この溶浸終了後1200℃から800℃までを24
℃/分で冷却後、冷却温度区間800℃〜600℃の間
を効果例3のように冷却速度3.5℃/分により更
に600℃まで冷却する。この冷却のとき効果例7
に示したように保持温度600℃を用いて作製した
ところ、効果例20に示すように安定した諸特性が
得られた。この後、上記の試料を冷却後500℃で
再加熱したが同様に安定した特性が得られた(実
施例21)。以上の結果から溶浸工程終了後の冷却
速度を所定条件に調節した上で、更に加熱保持工
程および再加熱処理工程を重畳させることは、特
性の一層の向上・安定に有効であつた。
以上説明したように本発明の実施例においては
冷却温度区間800℃から400℃のうち所定温度差間
100℃を冷却速度毎分0.6℃でもつて冷却する冷却
手段、冷却温度区間800℃から400℃のうちいずれ
かの温度で少なくとも0.25時間だけ加熱保持する
加熱保持手段および冷却温度区間400℃から800℃
のうちいずれかの温度で少なくとも0.25時間だけ
再加熱を行なう再加熱手段とを有し、これら各手
段のうちいずれか1手段または組合わせて製造を
行なうので、Cu−Cr合金の温度上昇特性および
接触抵抗特性を向上させ、かつ安定性をも向上さ
せることができる。この結果、真空バルブ用接点
材料として要求される特性を全て満足することが
でき最良の接点材料を得ることができる。
なお、本発明は上記実施例に限定されるもので
はない。例えばCuの一部または全部をAgに換え
ても上記実施例と同一の効果を奏することができ
る。
以上説明したように本発明の実施例によれば
Cu−Cr合金の温度上昇特性および接触抵抗特性
を向上させ、かつ安定性をも向上させることがで
きる。この結果、真空バルブ用接点材料としての
要求される特性を全て満足することができ最良の
接点材料を得ることができる。
なお、本発明は上記実施例に限定されるもので
はない。例えばCuの一部または全部をAgに換え
ても上記実施例と同一の効果を奏することができ
る。
又、本発明の効果はCu(Ag)とCr(Ti)との比
率が極めて広範囲の合金に対して奏することが判
明された。これに対して真空バルブ用接点材料の
他の特徴、例えばしや断性能の面から90%以上の
Cr(Ti)、耐溶着性の面から90%以上のCu(Ag)
の合金は避けるのが良い。
[発明の効果]
以上詳記したように本発明によれば、接触抵抗
特性および温度上昇特性を安定させ得る真空バル
ブ用接点材料の製造方法を提供できる。[Table] This manufacturing method adds a heating holding step and a reheating step to the vacuum valve material after the infiltration step. In other words, a mixture of 149μm Cr powder and Cu powder of the same diameter at a ratio of 95:5 is 1.5μm.
Temporary sintering is performed at 1150°C in a vacuum molded at ton/cm 2 , and then inserted into an alumina boat together with a Cu alloy ingot containing 0.1% Sb and infiltrated in a vacuum at 1200°C. After this infiltration is completed, the temperature is increased from 1200℃ to 800℃ for 24 hours.
After cooling at a rate of 3.5° C./min, the cooling temperature range from 800° C. to 600° C. is further cooled to 600° C. at a cooling rate of 3.5° C./min as in Effect Example 3. Effect example 7 during this cooling
When fabricated using a holding temperature of 600°C as shown in Figure 2, stable properties were obtained as shown in Effect Example 20. Thereafter, the above sample was cooled and then reheated at 500°C, but similarly stable characteristics were obtained (Example 21). From the above results, adjusting the cooling rate after the infiltration step to a predetermined condition and then superimposing the heating holding step and reheating treatment step was effective in further improving and stabilizing the properties. As explained above, in the embodiment of the present invention, within the cooling temperature range 800°C to 400°C,
A cooling means that cools 100°C at a cooling rate of 0.6°C per minute, a heating holding means that maintains heating at any temperature in a cooling temperature range of 800°C to 400°C for at least 0.25 hours, and a cooling temperature range of 400°C to 800°C.
It has a reheating means for reheating at one of these temperatures for at least 0.25 hours, and since production is carried out by using one or a combination of these means, the temperature increase characteristics of the Cu-Cr alloy and It is possible to improve contact resistance characteristics and also improve stability. As a result, it is possible to obtain the best contact material that can satisfy all the characteristics required for a contact material for a vacuum valve. Note that the present invention is not limited to the above embodiments. For example, even if part or all of Cu is replaced with Ag, the same effects as in the above embodiment can be achieved. As explained above, according to the embodiments of the present invention
The temperature rise characteristics and contact resistance characteristics of the Cu-Cr alloy can be improved, and the stability can also be improved. As a result, it is possible to obtain the best contact material that can satisfy all the characteristics required for a contact material for a vacuum valve. Note that the present invention is not limited to the above embodiments. For example, even if part or all of Cu is replaced with Ag, the same effects as in the above embodiment can be achieved. Furthermore, it has been found that the effects of the present invention can be exerted on alloys having an extremely wide range of ratios of Cu (Ag) and Cr (Ti). On the other hand, other characteristics of contact materials for vacuum valves, such as 90% or more in terms of shearing performance,
Cr (Ti), 90% or more Cu (Ag) in terms of welding resistance
It is best to avoid alloys of [Effects of the Invention] As detailed above, according to the present invention, it is possible to provide a method for manufacturing a contact material for a vacuum valve that can stabilize contact resistance characteristics and temperature rise characteristics.
Claims (1)
〜90重量%のCr又は/及びTiよりなる耐弧性材
料と、残部がCu又は/及びAgよりなる導電性材
料とから形成される真空バルブ用材料を焼結し溶
浸材を溶浸する前工程と、この前工程で処理され
た前記真空バルブ用材料を冷却し、かつこの冷却
過程中に前記真空バルブ用材料に対して前記冷却
過程の冷却温度区間800℃から400℃のうち、所定
温度差間100℃を前記真空バルブ用材料の温度上
昇特性を改善させる冷却速度毎分0.6℃から6℃
でもつて低下する冷却工程とを有することを特徴
とする真空バルブ用接点材料の製造方法。 2 充分脱ガスされ、かつ表面が清浄化された10
〜90重量%のCr又は/及びTiよりなる耐弧性材
料と、残部がCu又は/及びAgよりなる導電性材
料とから形成される真空バルブ用材料を焼結し溶
浸材を溶浸する前工程と、この前工程で処理され
た前記真空バルブ用材料を冷却し、かつこの冷却
過程中に前記真空バルブ用材料に対して前記冷却
過程の冷却温度区間800℃から400℃のうち、いず
れかの温度で前記真空バルブ用材料の導電率を高
くする少なくとも0.25時間だけ加熱保持する加熱
保持工程とを有することを特徴とする真空バルブ
用接点材料の製造方法。 3 充分脱ガスされ、かつ表面が清浄化された10
〜90重量%のCr又は/及びTiよりなる耐弧性材
料と、残部がCu又は/及びAgよりなる導電性材
料とから形成される真空バルブ用材料を焼結し溶
浸材を溶浸する前工程と、この前工程で処理され
た前記真空バルブ用材料を常温まで冷却する冷却
工程と、この冷却工程終了後にこの冷却での冷却
温度区間800℃から400℃のうち、いずれかの温度
で少なくとも0.25時間前記真空バルブ用材料を再
加熱する再加熱工程とを有することを特徴とする
真空バルブ用接点材料の製造方法。 4 充分脱ガスされ、かつ表面が清浄化された10
〜90重量%のCr又は/及びTiよりなる耐弧性材
料と、残部がCu又は/及びAgよりなる導電性材
料とから形成される真空バルブ用材料を焼結し溶
浸材を溶浸する前工程と、この前工程で処理され
た前記真空バルブ用材料をこの真空バルブ用材料
の温度上昇特性を改善させる冷却速度で冷却する
冷却工程と、この冷却工程終了後に前記真空バル
ブ用材料を前記冷却工程での冷却温度区間におけ
る所定温度でもつて前記真空バルブ用材料の導電
率を高くする時間だけ加熱保持する加熱保持工程
と、この加熱保持工程終了後に前記真空バルブ用
材料を前記冷却工程での冷却温度区間における所
定温度でもつて再加熱する再加熱工程とを有する
ことを特徴とする真空バルブ用接点材料の製造方
法。[Claims] 1. 10 which has been sufficiently degassed and whose surface has been cleaned.
A vacuum valve material made of an arc-resistant material made of ~90% by weight of Cr or/and Ti and a conductive material with the balance made of Cu or/and Ag is sintered and infiltrated with an infiltrant. The vacuum valve material treated in the previous step is cooled, and during this cooling process, the vacuum valve material is heated to a predetermined temperature within the cooling temperature range of 800°C to 400°C in the cooling process. Temperature difference between 100℃ and cooling rate from 0.6℃ to 6℃ per minute to improve the temperature rise characteristics of the vacuum valve material
1. A method for producing a contact material for a vacuum valve, the method comprising: a cooling step in which the temperature decreases. 2 Sufficiently degassed and surface cleaned10
A vacuum valve material made of an arc-resistant material made of ~90% by weight of Cr or/and Ti and a conductive material with the balance made of Cu or/and Ag is sintered and infiltrated with an infiltrant. A pre-process and the vacuum valve material treated in this pre-process are cooled, and during this cooling process, the vacuum valve material is cooled to any temperature within the cooling temperature range of 800°C to 400°C in the cooling process. A method for manufacturing a contact material for a vacuum valve, comprising the step of heating and holding the material for at least 0.25 hours to increase the conductivity of the material for a vacuum valve at such a temperature. 3 Sufficiently degassed and surface cleaned10
A vacuum valve material made of an arc-resistant material made of ~90% by weight of Cr or/and Ti and a conductive material with the balance made of Cu or/and Ag is sintered and infiltrated with an infiltrant. A pre-process, a cooling process in which the vacuum valve material treated in the pre-process is cooled to room temperature, and after the completion of this cooling process, a cooling temperature range of 800°C to 400°C. A method for producing a contact material for a vacuum valve, comprising a reheating step of reheating the material for a vacuum valve for at least 0.25 hours. 4 Sufficiently degassed and surface cleaned10
A vacuum valve material made of an arc-resistant material made of ~90% by weight of Cr or/and Ti and a conductive material with the balance made of Cu or/and Ag is sintered and infiltrated with an infiltrant. a cooling step in which the vacuum valve material treated in the previous step is cooled at a cooling rate that improves the temperature rise characteristics of the vacuum valve material; and after this cooling step, the vacuum valve material is A heating and holding step in which the vacuum valve material is heated and held at a predetermined temperature in the cooling temperature section for a period of time to increase the conductivity of the vacuum valve material; 1. A method for manufacturing a contact material for a vacuum valve, comprising a reheating step of reheating the material at a predetermined temperature in a cooling temperature range.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6684785A JPS61227330A (en) | 1985-03-30 | 1985-03-30 | Manufacture of contact material for vacuum valve |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6684785A JPS61227330A (en) | 1985-03-30 | 1985-03-30 | Manufacture of contact material for vacuum valve |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61227330A JPS61227330A (en) | 1986-10-09 |
| JPH0351250B2 true JPH0351250B2 (en) | 1991-08-06 |
Family
ID=13327644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6684785A Granted JPS61227330A (en) | 1985-03-30 | 1985-03-30 | Manufacture of contact material for vacuum valve |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61227330A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0760623B2 (en) * | 1986-01-21 | 1995-06-28 | 株式会社東芝 | Contact alloy for vacuum valve |
| JP2010061935A (en) * | 2008-09-03 | 2010-03-18 | Hitachi Ltd | Electrical contacts, methods of manufacturing the same, and switchgear for electric power |
-
1985
- 1985-03-30 JP JP6684785A patent/JPS61227330A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61227330A (en) | 1986-10-09 |
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