JPH0352025B2 - - Google Patents
Info
- Publication number
- JPH0352025B2 JPH0352025B2 JP59184626A JP18462684A JPH0352025B2 JP H0352025 B2 JPH0352025 B2 JP H0352025B2 JP 59184626 A JP59184626 A JP 59184626A JP 18462684 A JP18462684 A JP 18462684A JP H0352025 B2 JPH0352025 B2 JP H0352025B2
- Authority
- JP
- Japan
- Prior art keywords
- lens
- thin film
- electrode
- probe
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000523 sample Substances 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 claims description 10
- 238000002604 ultrasonography Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
- G01N29/22—Details, e.g. general constructional or apparatus details
- G01N29/24—Probes
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
- Transducers For Ultrasonic Waves (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、高周波超音波エネルギーを用いた超
音波顕微鏡の探触子、特にその整合器に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a probe for an ultrasound microscope using high-frequency ultrasound energy, and particularly to a matching device thereof.
近年1GHzに及ぶ高い周波数の音波の発生、検
出が可能となり、水中で約1μmまで音波長が実
現できる事になり、その結果、高い分解能の音波
撮像装置が得られることになつた。即ち、凹面レ
ンズを用いて集束音波ビームを作り、1μmに及
び高い分解能を実現するのである。かかるビーム
中に試料を挿入し、試料による反射、透過音波を
検出して試料の弾性的性質を反映した情報を得、
或いは、試料又は上記ビームを発生するセンサを
相対的に機械走査した2次元画像を作成するので
ある。(R.A.レモン氏とC.F.クエーツ氏のA
Scanning Acoustic Microscopeと題するIEEE
cat.No.73CH14829SU−pp423−426、1973年所載
の論文)。
In recent years, it has become possible to generate and detect sound waves with frequencies as high as 1 GHz, making it possible to achieve sound wave lengths of up to approximately 1 μm underwater, and as a result, it has become possible to obtain high-resolution sound wave imaging devices. In other words, a concave lens is used to create a focused acoustic beam, achieving a resolution as high as 1 μm. A sample is inserted into the beam, and the reflected and transmitted sound waves from the sample are detected to obtain information reflecting the elastic properties of the sample.
Alternatively, a two-dimensional image is created by relatively mechanically scanning the sample or the sensor that generates the beam. (A by Mr. RA Lemon and Mr. CF Quates)
IEEE entitled Scanning Acoustic Microscope
cat.No.73CH14829SU-pp423-426, paper published in 1973).
このような音波像を得る超音波顕微鏡の従来例
を第1,第2図を用いて説明する。 A conventional example of an ultrasonic microscope for obtaining such a sound wave image will be explained with reference to FIGS. 1 and 2.
第1図は、試料から反射信号を得るための探触
子系の概略構成を示す図である。図において、音
波レンズ20は、例えば、サフアイア、石英など
の円柱状物質よりなり、一端面が光学研摩された
平面であり、他端面は凹面状の球面穴のレンズ面
30が形成されている。上部電極と下部電極に挟
まれた圧電薄膜10を上記平面に形成し、この圧
電薄膜10にパルス発振器5によつて印加された
RFパルス電気信号による音波レンズ20内に平
面波状のRFパルス音波が放射される。この平面
状音波は、上記球面穴のレンズ面30に到達する
と、レンズ面30と媒質40の界面で形成された
正の集束レンズにより所定焦点におかれた試料5
0上に収束超音波を照射する。試料50により反
射された音波は同じレンズにより集音されて平面
波に変換され、音波レンズ20内を伝播し、つい
には圧電薄膜10により再びRF電気信号に変換
される。 FIG. 1 is a diagram showing a schematic configuration of a probe system for obtaining reflected signals from a sample. In the figure, a sound wave lens 20 is made of a cylindrical material such as sapphire or quartz, and one end surface is an optically polished flat surface, and the other end surface is formed with a concave spherical hole lens surface 30. A piezoelectric thin film 10 sandwiched between an upper electrode and a lower electrode is formed on the above plane, and a pulse is applied to this piezoelectric thin film 10 by a pulse oscillator 5.
An RF pulsed sound wave in the form of a plane wave is radiated into the sound wave lens 20 by the RF pulsed electric signal. When this planar sound wave reaches the lens surface 30 of the spherical hole, a positive focusing lens formed at the interface between the lens surface 30 and the medium 40 focuses the sample 5 at a predetermined focus.
0 is irradiated with focused ultrasound. The sound waves reflected by the sample 50 are collected by the same lens, converted into plane waves, propagated within the sound wave lens 20, and finally converted back into RF electrical signals by the piezoelectric thin film 10.
この受信信号の様子を上記RF電気信号を検波
した後のビデオ帯域でみると、第2図の如くにな
る。ここで、横軸は時間軸を、たて軸は信号強度
を表わしている。第2図において、波形Aは打ち
出し信号(上記印加信号)を、波形Bはレンズ2
0と媒質40との界面30からのエコー(echo)
を、又、波形Cは試料50からの反射エコー
(echo)を示している。この様な波形は、繰り返
し時間tRで反復される。反射エコーCは、試料の
場所毎の音響的性質や試料の走査によつて繰り返
し毎に変化するから、この反射エコーCを繰り返
し周期に同期して受信回路6により標本化して、
その強度のみをとり出し、画像信号とする。即
ち、試料を機械走査系60によつてxy面内で走
査し、上記画像信号をこの機械走査と同期してブ
ラウン管70上に表示すれば超音波顕微鏡が得ら
れる。 If we look at the state of this received signal in the video band after detecting the RF electric signal, it will look like the one shown in Fig. 2. Here, the horizontal axis represents the time axis, and the vertical axis represents the signal strength. In FIG. 2, waveform A represents the launch signal (the above applied signal), and waveform B represents the lens 2.
Echo from the interface 30 between 0 and the medium 40
Also, waveform C shows a reflected echo from the sample 50. Such a waveform is repeated with a repetition time tR . Since the reflected echo C changes each time it is repeated depending on the acoustic properties of each sample location and the scanning of the sample, this reflected echo C is sampled by the receiving circuit 6 in synchronization with the repetition period.
Only the intensity is extracted and used as an image signal. That is, an ultrasonic microscope can be obtained by scanning the sample in the xy plane by the mechanical scanning system 60 and displaying the image signal on the cathode ray tube 70 in synchronization with this mechanical scanning.
ところで、このような装置において、超音波を
送受信をする主要部である圧電薄膜10の材料と
しては通例CdSやZnOが用いられており、出来る
だけ効率よく超音波を送受信するためには、RF
パルス発振器5と圧電薄膜からなる探触子との間
に整合器を投入する必要がある。 By the way, in such devices, CdS or ZnO is usually used as the material for the piezoelectric thin film 10, which is the main part that transmits and receives ultrasonic waves.In order to transmit and receive ultrasonic waves as efficiently as possible, RF
It is necessary to insert a matching device between the pulse oscillator 5 and the probe made of a piezoelectric thin film.
周知のようにかかる接触子の電気端子側からみ
た等価回路は第3図のように表わされ、制動容量
Cd、圧電体の質量およびステイフネスを反映し
たリアクタンス成分La、Ca、音響放射抵抗を反
映したRaからなる。RFパルス発振器より接触子
に高周波電力を印加する場合、探触子の制動容量
Cdは周波数が高くなると短絡効果を与える。 As is well known, the equivalent circuit of such a contact seen from the electrical terminal side is shown in Figure 3, and the braking capacity is
It consists of Cd, reactance components La and Ca that reflect the mass and stiffness of the piezoelectric body, and Ra that reflects acoustic radiation resistance. When applying high frequency power to the contact from an RF pulse oscillator, the braking capacity of the probe
Cd gives a short circuit effect as the frequency increases.
従来は、ストリツプ線路、スロツト線路、共平
面導波管などで構成された整合器を用いている
が、この場合、第1に薄膜に接近して音響レンズ
と一体化しようとすると、整合器が大きいため
に、接触子が大きくかつ重くなり、これを機械走
査駆動することが困難になる。第2に端触子の外
に整合器を設けると、両者をつなぐコネクタやケ
ーブルの為に充分な整合がとれないなどの難点が
ある。 Conventionally, a matching device composed of a strip line, a slot line, a coplanar waveguide, etc. is used, but in this case, first, when attempting to approach the thin film and integrate it with the acoustic lens, the matching device becomes The large size makes the contact large and heavy, making it difficult to mechanically scan drive it. Second, if a matching device is provided outside the end contact, there is a problem that sufficient matching cannot be achieved because of the connector or cable that connects the two.
第4図は、従来構成の1例を示す図で、探触子
はレンズ20の上にCr−Auなどの金属蒸着で形
成した下部電極11とAl、Auなどの金属で蒸着
した上部電極9、その間に形成した圧伝薄膜10
からなる。整合部としては、ガラスエポキシ基板
などの絶縁物の上下面に銅箔などのパターン1
2,14を形成し、この長さLを使用周波数での
1/4波長に選択し、上部パターン12をテーパ状、
あるいはエクスポネンシヤル状に形成していた。 FIG. 4 is a diagram showing an example of a conventional configuration, in which the probe has a lower electrode 11 formed on the lens 20 by vapor deposition of a metal such as Cr-Au, and an upper electrode 9 formed by vapor deposition of a metal such as Al or Au. , the piezoelectric thin film 10 formed between
Consisting of As a matching part, pattern 1 such as copper foil is placed on the upper and lower surfaces of an insulator such as a glass epoxy board.
2 and 14, this length L is selected to be 1/4 wavelength at the frequency used, and the upper pattern 12 is formed into a tapered shape.
Alternatively, they were formed in an exponential manner.
かかる導体線路形では、自由空間波長λに対
し、その基板では波長λ′が、基板の誘電率εrを用
いて
λ′=λ/√εr ……(1)
に短絡される。上記、ガラスエポキシの場合、εr
=2程度であるから、1GHzにおいてλ′=21.2mで
あり、λ′/4=5.3cmとなる。レンズの寸法は5
mmφ、5mmt程度であるから、これら探触子と整
合器を一体化しようとすると著しく大きな探触子
となる。 In such a conductor line type, the free space wavelength λ is short-circuited at the wavelength λ' in the substrate using the dielectric constant ε r of the substrate as follows: λ'=λ/√ε r (1). Above, in the case of glass epoxy, ε r
= about 2, so at 1 GHz, λ' = 21.2 m, and λ'/4 = 5.3 cm. Lens dimensions are 5
mmφ and about 5 mmt, so if these probes and matching device were to be integrated, the probe would be extremely large.
本発明は、以上の点に鑑みてなされたもので、
整合器と圧電薄膜を音波レンズ上に一体で成形す
ることにより小型、軽量の探触子を提供するもの
である。
The present invention has been made in view of the above points, and
By integrally molding a matching device and a piezoelectric thin film on a sonic lens, a small and lightweight probe is provided.
本発明の骨子は、誘電率の高い圧電体で、圧電
活性に分極処理を必要とする材料を用いて整合器
と圧電薄膜を一体形成するものである。このよう
な構成によれば第1に小型、軽量で機械走査に適
した探触子を提供でき、第2に薄膜のごく近くで
整合をとるため接触抵抗やケーブル損コネクタ損
失などに影響をうけることなく最適な整合が容易
に実現でき、超音波顕微鏡などの撮像装置の画質
向上に大きく寄与する。
The gist of the present invention is to integrally form a matching device and a piezoelectric thin film using a piezoelectric material having a high dielectric constant and requiring polarization treatment for piezoelectric activation. With this configuration, firstly, it is possible to provide a probe that is small, lightweight, and suitable for mechanical scanning, and secondly, since alignment is achieved very close to the thin film, it is not affected by contact resistance, cable loss, connector loss, etc. Optimum alignment can be easily achieved without any interference, and this greatly contributes to improving the image quality of imaging devices such as ultrasound microscopes.
以下図面を用いて本発明の実施例をもとに詳し
く説明する。 DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below based on embodiments with reference to the drawings.
本発明では、基板材料として圧電性を実現しう
るセラミツク、例えばジルコン酸、チタン酸バリ
ウム(PZT)やテイタン酸鉛(PbTiO3)など高
誘電率のものを用いる。これらの誘電体では、εr
は100〜1000と大きいので、上記(1)式の短絡波長
λ′は1/10〜1/30になり、一体化に極めて適してい
る。前述の1/4波長整合の場合λ′/4=7.5mm(εr
=100、1GHzの場合)、λ′/4=2.5mm(εr=1000、
1GHzの場合)となる。
In the present invention, ceramics capable of realizing piezoelectricity, such as those with high dielectric constants such as zirconate, barium titanate (PZT), and lead titanate (PbTiO 3 ), are used as the substrate material. For these dielectrics, ε r
is as large as 100 to 1000, so the short-circuit wavelength λ' in equation (1) above is 1/10 to 1/30, which is extremely suitable for integration. In the case of 1/4 wavelength matching mentioned above, λ'/4 = 7.5 mm (ε r
= 100, for 1 GHz), λ'/4 = 2.5 mm (ε r = 1000,
1GHz).
第5図は本発明の一実施例を示す図で、レンズ
20の上に下部電極11(Au,Cr,Pt)を設
け、このうえに前記セラミツク材料10をスパツ
タなどの手段で形成し、その上に2つの上部電極
(Au,Cr,Al,Ptなど金属)を設けてある。従
つて、セラミツク材の圧電薄膜10は、2つの上
下電極対、即ち電極102と下部電極11、電極
101と下部電極11によつて挟まれた構造にな
つている。 FIG. 5 is a diagram showing an embodiment of the present invention, in which a lower electrode 11 (Au, Cr, Pt) is provided on a lens 20, and the ceramic material 10 is formed thereon by means such as sputtering. Two upper electrodes (made of metal such as Au, Cr, Al, or Pt) are provided on the top. Therefore, the piezoelectric thin film 10 made of ceramic material is sandwiched between two pairs of upper and lower electrodes, that is, the electrode 102 and the lower electrode 11, and the electrode 101 and the lower electrode 11.
ここで、上部伝極101と下部電極11の間に
10KV/mm程度の直流電界を印加すると、いわゆ
る分極処理が行なわれ、セラミツクは圧電活性と
なる。このサンドイツチ構造にRF電力を印加す
れば、従来通りレンズ面30へ超音波が放出され
る。他方、上部電極102と下部電極11で挟ま
れた部分のセラミツクは高誘導率ではあるが圧電
不活性であり、もしこの両端にRF電力を印加し
ても超音波は発生しない。従つて、電極102の
形状を選択することにより、この部分は整合部と
して動作させることができる。又、電極101と
電極102は、金線15などを用いて繁ぐ。本発
明で用いたセラミツクの高誘電率のおかげでLは
2.5〜7.5mmと短縮され、レンズ20を著しく大き
くすることなく発音部と整合部をレンズ上で一体
化することができる。本実施例では、上部電極1
02の形状として長方形状のものを呈示したが、
テーパ状、イクスポネンシヤル状などの整合に適
した他の形状でもよい。又、第6図の如く、圧電
体として働く部分をZnOなど分極処理の不要な材
料11aで構成し、整合部には高誘電率のセラミ
ツク薄膜10bを用いてもよい。 Here, between the upper electrode 101 and the lower electrode 11,
When a DC electric field of about 10 KV/mm is applied, a so-called polarization process is performed, and the ceramic becomes piezoelectrically active. When RF power is applied to this sandwich structure, ultrasonic waves are emitted to the lens surface 30 as before. On the other hand, the ceramic at the portion sandwiched between the upper electrode 102 and the lower electrode 11 has a high dielectric constant but is piezoelectrically inactive, and no ultrasonic waves are generated even if RF power is applied to both ends of the ceramic. Therefore, by selecting the shape of the electrode 102, this portion can be operated as a matching portion. Further, the electrode 101 and the electrode 102 are connected using a gold wire 15 or the like. Thanks to the high dielectric constant of the ceramic used in the present invention, L is
The length is shortened to 2.5 to 7.5 mm, and the sounding part and the matching part can be integrated on the lens without significantly increasing the size of the lens 20. In this embodiment, the upper electrode 1
Although a rectangular shape was presented as the shape of 02,
Other shapes suitable for alignment such as tapered, exponential, etc. may also be used. Alternatively, as shown in FIG. 6, the part that acts as a piezoelectric body may be made of a material 11a that does not require polarization treatment, such as ZnO, and the matching part may be made of a ceramic thin film 10b with a high dielectric constant.
以上述べたように、本発明により探触子が小型
軽量になり、かつ送受信回路との最適な整合を容
易に取ることができる超高周波超音波探触子を得
ることができる。
As described above, according to the present invention, it is possible to obtain an ultra-high frequency ultrasonic probe which is small in size and lightweight, and which can easily be optimally matched with a transmitting/receiving circuit.
第1図は本発明を適用する超音波顕微鏡の従来
の構成を示すブロツク図、第2図はその動作を示
す波形図、第3図は接触子の等価回路図、第4図
は従来の探触子及び整合部を示す斜視図、第5
図、第6図はそれぞれ本発明の実施例を示す平面
図及び断面図である。
10……セラミツク薄膜、11……下部電極、
101,102……電極、20……音波レンズ。
Fig. 1 is a block diagram showing the conventional configuration of an ultrasonic microscope to which the present invention is applied, Fig. 2 is a waveform diagram showing its operation, Fig. 3 is an equivalent circuit diagram of a contact, and Fig. 4 is a conventional ultrasonic microscope. Perspective view showing the feeler and alignment part, No. 5
6 are a plan view and a sectional view, respectively, showing an embodiment of the present invention. 10... Ceramic thin film, 11... Lower electrode,
101, 102...electrode, 20...sonic wave lens.
Claims (1)
した音波レンズの前記平面に、一つの下部電極を
介して一体のセラミツク薄膜を形成し、このセラ
ミツク薄膜上に音波発生用の上部電極と整合用の
上部電極とを形成し、前記セラミツク薄膜のうち
上記超音波発生用電極と上記下部電極とに挟まれ
た部分が圧電活性化されているものであることを
特徴とする超音波顕微鏡の探触子。1. An integral ceramic thin film is formed on the flat surface of a sound wave lens with a lens surface formed on one end and a flat surface formed on the other end via one lower electrode, and an upper electrode for generating sound waves is formed on this ceramic thin film. an upper electrode for alignment, and a portion of the ceramic thin film sandwiched between the ultrasound generating electrode and the lower electrode is piezoelectrically activated. probe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59184626A JPS6162857A (en) | 1984-09-05 | 1984-09-05 | ultrasound microscope probe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59184626A JPS6162857A (en) | 1984-09-05 | 1984-09-05 | ultrasound microscope probe |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6162857A JPS6162857A (en) | 1986-03-31 |
| JPH0352025B2 true JPH0352025B2 (en) | 1991-08-08 |
Family
ID=16156524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59184626A Granted JPS6162857A (en) | 1984-09-05 | 1984-09-05 | ultrasound microscope probe |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6162857A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2580807Y2 (en) * | 1990-11-29 | 1998-09-17 | 日立建機株式会社 | Ultrasonic probe |
-
1984
- 1984-09-05 JP JP59184626A patent/JPS6162857A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6162857A (en) | 1986-03-31 |
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