JPH0353728B2 - - Google Patents
Info
- Publication number
- JPH0353728B2 JPH0353728B2 JP62211096A JP21109687A JPH0353728B2 JP H0353728 B2 JPH0353728 B2 JP H0353728B2 JP 62211096 A JP62211096 A JP 62211096A JP 21109687 A JP21109687 A JP 21109687A JP H0353728 B2 JPH0353728 B2 JP H0353728B2
- Authority
- JP
- Japan
- Prior art keywords
- fine particles
- particles
- coating
- film
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000576 coating method Methods 0.000 claims description 54
- 239000011248 coating agent Substances 0.000 claims description 51
- 239000007788 liquid Substances 0.000 claims description 28
- 239000000126 substance Substances 0.000 claims description 26
- -1 silicon alkoxide Chemical class 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 239000003960 organic solvent Substances 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 3
- 239000012046 mixed solvent Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 56
- 239000002245 particle Substances 0.000 description 44
- 239000000243 solution Substances 0.000 description 42
- 239000010419 fine particle Substances 0.000 description 35
- 238000000034 method Methods 0.000 description 18
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 18
- 229910001887 tin oxide Inorganic materials 0.000 description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 17
- 239000003513 alkali Substances 0.000 description 17
- 239000011521 glass Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 239000000084 colloidal system Substances 0.000 description 11
- 150000003606 tin compounds Chemical class 0.000 description 11
- 239000000843 powder Substances 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 239000007864 aqueous solution Substances 0.000 description 9
- 230000007062 hydrolysis Effects 0.000 description 9
- 238000006460 hydrolysis reaction Methods 0.000 description 9
- 150000002472 indium compounds Chemical class 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 7
- 238000010924 continuous production Methods 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- 229920003023 plastic Polymers 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- IOUCSUBTZWXKTA-UHFFFAOYSA-N dipotassium;dioxido(oxo)tin Chemical compound [K+].[K+].[O-][Sn]([O-])=O IOUCSUBTZWXKTA-UHFFFAOYSA-N 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000004576 sand Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000003301 hydrolyzing effect Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- UJVRJBAUJYZFIX-UHFFFAOYSA-N nitric acid;oxozirconium Chemical compound [Zr]=O.O[N+]([O-])=O.O[N+]([O-])=O UJVRJBAUJYZFIX-UHFFFAOYSA-N 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000010023 transfer printing Methods 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 150000001463 antimony compounds Chemical class 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- TVQLLNFANZSCGY-UHFFFAOYSA-N disodium;dioxido(oxo)tin Chemical compound [Na+].[Na+].[O-][Sn]([O-])=O TVQLLNFANZSCGY-UHFFFAOYSA-N 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910000337 indium(III) sulfate Inorganic materials 0.000 description 1
- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229940079864 sodium stannate Drugs 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Landscapes
- Paints Or Removers (AREA)
- Non-Insulated Conductors (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
Description
発明の技術分野
本発明は、透明導電膜形成用塗布液およびその
製造方法に関し、さらに詳しくは、ガラス、プラ
スチツク等の基材表面に、基材との密着性に優
れ、しかも耐アルカリ性および耐擦傷性が高く、
極めて透明な導電性被膜を150℃以上の低温で連
続生産し得るような透明導電膜形成用塗布液およ
びその製造方法に関する。
発明の技術的背景ならびにその問題点
ガラスあるいはプラスチツクは、透明な基材で
あるため、様々な用途に使われているが、これら
は、絶縁体であるため、その表面に静電気を発生
し易く、これらをブラウン管(CRT)、液晶デイ
スプレイ(LCD)等の表示機器用の前面基材と
して用いた場合、ごみ、ほこりが付着して画像が
見えにくくなつたり、さらにLCD等のエレクト
ロデイスプレイでは、誤動作を起こす恐れもあ
る。
また第1図に示すような自動原稿供給装置
(ADF)を備えた複写機1では、原稿の供給中に
天板ガラス2に静電気が発生し、このため紙詰り
を起こし、原稿の連続供給が出来なくなつたり、
また原稿がADFによつて天板ガラス2上を移動
する際に、天板ガラス2を傷付けるため、その透
明性が損われ、得られる複写像が鮮明さに欠ける
などの問題点も生じていた。
さらにプラスチツク基材は、その表面硬度が低
いため容易に傷付き、基材の透明性が低下してい
た。
このような問題点を解決するため、ガラスある
いはプラスチツクなどの基材上に、例えば、
CVD法、PVD法、蒸着法等の気相法によつて金
属薄膜あるいは導電性の無機酸化物膜を形成する
方法が検討されている。ところがこれらの被膜
は、透明性や導電性には優れているが、耐アルカ
リ性が弱く、また耐擦傷性に劣るため傷付き易い
という問題点があつた。またこれらの被膜を形成
するには、真空蒸着装置が必要であり、しかもそ
の装置によつて被膜を形成できる基材の面積ある
いは形状が制限され、また低温での形成ができ
ず、さらにバツチ工程のために連続生産性に劣つ
ていた。
また問題点を解決するため、導電性物質が、ア
クリル系樹脂、ビニル系樹脂、アミン系樹脂、メ
ラミン系樹脂などのバインダー樹脂に分散されて
なる導電性塗料を、基材表面に塗布する方法も検
討されている。
しかしながら、導電性物質がバインダー樹脂に
分散されてなる導電性塗料を用いて得られる被膜
は、導電性には優れているが、透明性、耐アルカ
リ性、耐擦傷性、密着性に劣つていた。
ところで本出願人は、先に出願した特願昭61−
299686号で、ジルコニウムオキシ塩と、シリコン
アルコキシドまたはその誘導体と、導電性物質が
水および有機溶媒中に均一分散した導電性被膜形
成用塗布液、あるいは前記塗布液に非沈降性シリ
カを混合した塗布液を提案した。これらの塗布液
を用いて基板上に塗膜を形成し、この塗膜を250
℃以上の温度で焼成して得られた被膜は、透明
性、導電性、耐擦傷性等には優れているが、焼成
時の温度が250℃未満であると、得られる被膜の
耐アルカリ性が低下してしまうことが本発明者ら
によつて見出された。したがつて上記の導電性被
膜形成用塗布液のプラスチツクへの適用は、困難
であつた。また塗布液の熱安定性が低いため、塗
工中、特に転写印刷で連続生産している際に塗布
液がゲル化してしまい連続生産ができないばかり
か、得られた被膜は透明性、導電性が悪かつた。
しかも塗布液を長期間保存する際には、15℃以下
に保たなければならないという問題点があること
が本発明者によつて見出され、これらの問題点を
解決することが望まれている。
発明の目的
本発明は、上記のような問題点を解決するもの
であつて、ガラス、プラスチツク等の基材表面
に、基材との密着性に優れ、耐アルカリ性および
耐擦傷性が高く、極めて透明な導電性被膜を、高
温度で焼成しなくとも連続生産し得るような透明
導電膜形成用塗布液およびその製造方法の提供を
目的としている。
発明の概要
本発明に係る透明導電膜形成用塗布液は、ビス
アセチルアセトナト−ジアルコキシジルコニウム
と、シリコンアルコキシドの部分加水分解物と、
導電性物質とが、水および有機溶媒からなる混合
溶媒中に均一分散していることを特徴としてい
る。
この透明導電膜形成用塗布液では、導電性物質
の凝集および熱によるゲル化をビスアセチルアセ
トナト−ジアルコキシジルコニウムの添加によつ
て防止し、導電性物質の分散性を高め、それによ
つて得られる被膜の透明性が向上し、被膜の連続
生産性が可能となつている。さらに本発明に係る
透明導電膜形成用塗布液は、シリコンアルコキシ
ドの部分加水分解物を含有しているため、基材と
の密着性に優れ、しかも150℃程度の低温での被
膜形成が可能となり、耐アルカリ性および耐擦傷
性に優れた被膜が得られる。
また本発明に係る透明導電膜形成用塗布液の製
造方法は、導電性物質を分散した水および有機溶
媒混合液に、ビスアセチルアセトナト−ジアルコ
キシジルコニウムを加え、次いでシリコンアルコ
キシドの部分加水分解物を混合し、均一に分散さ
せたことを特徴としている。
発明の具体的説明
以下、本発明に係る透明導電膜形成用塗布液お
よびその製造方法について、具体的に説明する。
本発明に係る透明導電膜形成用塗布液は、ビス
アセチルアセトナト−ジアルコキシジルコニウム
と、シリコンアルコキシドの部分加水分解物と、
導電性物質とが、水および有機溶媒からなる混合
溶媒中に均一分散されて構成されているが、以下
各成分について説明する。
ビスアセチルアセトナト−ジアルコキシジルコ
ニウムは、そのアルコキシ基の炭素数が1〜8個
であれば良く、特にブトキシ基が好ましい。本発
明に係る透明導電膜形成用塗布液において、ビス
アセチルアセトナト−ジアルコキシジルコニウム
は、導電性物質の分散性および熱安定性を向上さ
せる役割を果しているが、それは導電性物質に対
する保護コロイド的な役割を果しているからと推
察される。
シリコンアルコキシドとしては、炭素数1〜8
のアルコキシ基を1〜4個有する、SiHa(OR)b
(a=0〜3、b=1〜4、a+b=4、Rはア
ルキル基)、あるいは(R′O)aSi(OR)bまたはR′a
Si(OR)b(a=1〜3、b=1〜3、a+b=
4、RおよびR′はアルキル基)で示される化合
物またはこれらの縮合体(五量体まで)、あるい
は前記式のHの一部をClまたはビニル基等で置換
した誘導体が用いられる。これらの中で特にSi
(OR)4(Rは、メチル基、エチル基、プロピル基、
ブチル基)で示される化合物が好ましい。さらに
前記式で表わされる化合物一種または二種以上の
混合使用が可能である。
部分加水分解の条件としては、シリコンアルコ
キシドを部分加水分解するための一般的な方法を
採用でき、例えばメタノールまたはエタノールに
シリコンアルコキシドを混合し、水と酸またはア
ルカリを加えて部分加水分解するような条件を採
用できるが、以下のような条件が特に好ましい。
すなわち、酸として、塩酸、硝酸、燐酸、酢酸を
用い、酸とシリコンアルコキシドの混合割合は、
0.01≦酸/SiO2≦0.5(シリコンアルコキシドを
SiO2に換算してた時の重量比)である。この値
が0.01未満であると、未反応のシリコンアルコキ
シドが多量に存在し、得られる被膜の導電性を阻
害するため好ましくなく、また0.5を越えると、
部分加水分解速度が速くなりすぎて、連続生産性
および塗布液の保存性が低下するため好ましくな
い。また水の混合割合は、H2O/シリコンアル
コキシド≧2(モル比)であることが好ましい。
この値が2未満では、被膜中に未反応のシリコン
アルコキシドが残留し、密着性、耐擦傷性、耐ア
ルカリ性が低下するため好ましくない。部分加水
分解温度は、30〜60℃であることが好ましい。
導電性物質としては、酸化錫、またはアンチモ
ン、リン、弗素等がドープされた酸化錫、あるい
は酸化インジウム、または錫、弗素がドープされ
た酸化インジウムが用いられ、これらの導電性物
質の、平均粒径は、0.4μm以下であることが好ま
しい。このような微粒子としては、本出願人が先
に出願した「導電性微粉末の製造方法」(特願昭
62−51008号)から得られるものが好適である。
(以下この特願昭62−51008号に基づいて得られた
微粒子を第1微粒子という)
また特に曇価(ヘーズ)が低く、高い透明性の
要求される用途には、平均粒径が0.01〜0.1μmの
導電性微粒子が最適である。このような微粒子
は、たとえば、本出願人が先に出願した「酸化錫
ゾルおよびその製造方法」(特願昭61−75283号)
に基づいて得られる。(以下この特願昭61−75283
号に基づいて得られた微粒子を第2微粒子とい
う)
先ず第1微粒子の製造方法について説明する
と、この第1微粒子は、スズ化合物、またはイン
ジウム化合物を含む水溶液を、8〜12のPH条件下
に保持して、スズまたはインジウムの化合物を
徐々に加水分解することにより、金属酸化物、含
水酸化物あるいは金属酸化物のコロイド粒子を含
有するゾルを生成させ、しかる後、このゾルを乾
燥、焼成した後、粉砕して得られる。出発原料と
しては、水溶性で、しかもPH8〜12の範囲で加水
分解可能な、スズ化合物、またはインジウム化合
物が用いられ、具体的には、スズ酸カリウム、ス
ズ酸ナトリウム等のスズ化合物、および、硝酸イ
ンジウム、硫酸インジウム等のインジウム化合物
が用いられる。
スズ化合物、またはインジウム化合物を含む水
溶液(以下、原料液という)に含まれる金属種
が、スズまたはインジウムのいずれか一種である
場合、得られる第1微粒子は、酸化錫、または酸
化インジウムで構成されるが、原料液、少量の異
種元素を溶存させることで、異種元素がドープさ
れた第1微粒子を製造することができる。たとえ
ばスズ化合物を含有する原料液に、少量の吐酒
石、または弗化アンモニウムを溶解させておくこ
とにより、酸化錫にアンチモン、または弗素がド
ープした第1微粒子を得ることができ、インジウ
ム化合物を含有する原料液に、少量のスズ化合物
を溶解させておくことにより、酸化インジウムに
スズがドープされた第1微粒子を得ることができ
る。
異種元素がドープした第1微粒子は、また、次
のような方法でも、製造することができる。すな
わち、原料液にスズ化合物の水溶液を使用し、液
中のスズ化合物を、上記のPH条件下に、徐々に加
水分解することで、ゾルを生成させ、このゾルか
らコロイド粒子を回収し、次いでアンチモン化合
物、リン化合物および弗素化合物の、少なくとも
一種の水溶液を、前記のコロイド粒子に含浸さ
せ、しかる後に、この粒子を、乾燥して焼成する
方法により、酸化スズにアンチモン、リン、弗素
などがドープされた第1微粒子を製造することが
できる。また、原料液にインジウム化合物の水溶
液を使用し、上記と同様にしてゾルを生成させ、
このゾルからコロイド粒子を回収後、スズ化合
物、および/または弗素化合物の水溶液を、この
コロイド粒子に含浸させ、次いで、この粒子を乾
燥して、焼成する方法により、酸化インジウム
に、スズおよび/または弗素がドープされた第1
微粒子を製造することができる。この場合ゾルを
生成させる過程で、副生塩が生成されると、コロ
イド粒子が凝集し易くなるばかりでなく、最終的
に得られる第1微粒子の比抵抗が、副生塩の夾雑
によつて上昇するので、副生塩の生成が予想され
る場合には、ゾルから回収したコロイド粒子に、
ドープ用元素化合物水溶液を、含浸させるに先立
つて、コロイド粒子から副生塩を、除去しておく
ことが推奨される。
原料液に含まれる、スズ化合物またはインジウ
ム化合物の濃度は、任意に選ぶことができるが、
一般に、0.5〜30重量%の範囲にあることが好ま
しい。
上記の原料液に含まれるスズ化合物またはイン
ジウム化合物を、ドーパントとなる異種元素の化
合物が共存している場合には異種元素化合物とと
もに、加水分解する場合、反応系のPHを、8〜12
の範囲の任意の一定値に保持しなければならな
い。反応系のPHが8未満である場合には粒度分布
がブロードになり、PH値がさらに低下すると、加
水分解で生成した金属酸化物が沈澱し、これをコ
ロイド粒子として、液中に分散することができ
ず、従つて、ゾルを調製することができないため
好ましくない。また、反応系のPHが12を越えた場
合には、ゾルの調製は不可能ではないものの、ゾ
ルから濾別したコロイド粒子を洗浄する際に、ア
ルカリ分を十分に除去できないため、最終的に得
られる第1微粒子の導電性が悪化するため好まし
くない。
反応器内に生成される、ゾルの固形物濃度につ
いては、特に制限はないが、一般に、濃度が高く
なるに従つて、生成するコロイド粒子の粒度分布
がブロードになる傾向がある。加水分解の反応温
度は、通常30〜90℃の範囲で、任意に選ぶことが
できる。
加水分解によつて得られる、コロイド粒子の平
均粒径は、0.05〜0.3μm、好ましくは、0.07〜
0.2μmの範囲にあり、粒度分布は、全粒子の80%
以上が、平均粒径の0.5〜1.5倍の範囲にある。
ゾル調製後は、このゾルを濾別して、コロイド
粒子を回収し、洗浄によつて、粒子に付着する副
生塩、その他を除去した後、乾燥し、さらに焼成
した後、粉砕することによつて第1微粒子を得る
ことができる。ゾルから濾別された粒子は、焼成
工程で若干焼結するため、第1微粒子の平均粒径
は、通常20〜50μm程度であり、また第1微粒子
の比表面積は、通常100m2/g以下である。
このようにして得られる第1微粒子は、また、
粉砕により容易にその焼結状態を、解き放つこと
ができ、通常の粉砕手段によつて塗布液中での平
均粒径が、0.4μm以下の第1微粒子を得ることが
できる。そして、こうして得られる第1微粒子に
は、0.8μm以上の粗大粒子が、少量しか含まれて
いない。なお、第1微粒子の粉砕は、シリコンア
ルコキシド等の他の成分との混合前に行つても良
く、また混合後に行つても良い。第1微粒子の粉
砕は、従来公知の粉砕方法によつて行うことがで
き、たとえばアトライター、サンドミル、ボール
ミル、三本ロール等の機器が利用できる。
次に第2微粒子について説明すると、この第2
微粒子は、酸化錫または異種元素がドープされた
酸化錫の微粉末を、酸水溶液またはアルカリ水溶
液中で加熱処理することによつて得られる導電性
酸化錫コロイド中に分散した微粒子である。ここ
で用いられる酸化錫または異種元素ドーピング酸
化錫の微粉末は、導電性を付与するために高温焼
成されたもので、前記第1微粒子の製造方法で得
られたものでも良く、また従来公知の方法で得ら
れたものでも良い。
この導電性酸化錫コロイドを得るには、以下の
ようにすればよい。すなわち前記酸化錫または異
種元素ドーピング酸化錫の微粉末を、鉱酸または
有機酸などの酸水溶液あるいはアルカリ金属水酸
化物または第四級アンモニウムなどのアルカリ水
溶液中で加熱処理する。加熱温度は、約200℃以
下であることが好ましい。また酸およひアルカリ
の量は、処理すべき微粉末の少なくとも5重量%
以上であることが好ましい。こうして得られた導
電性酸化錫コロイド中のコロイド粒子は、通常平
均粒径が0.1μm以下で、全粒子の60%以上が0.1μ
m以下の粒子で占められている。
このようにして得られた第1微粒子あるいは第
2微粒子の導電性物質は、粉末の場合、そのまま
用いることもでき、あるいは水または有機溶媒に
分散させて用いることもできる。前記第2微粒子
が分散した導電性酸化錫コロイドは、水を分散媒
とする水性ゾルだが、水性ゾルのまま用いること
もできるし、必要に応じて水の一部または全部を
アルコール等の有機溶媒で置換した有機ゾルとし
て用いることもできる。
次に本発明の透明導電膜形成用塗布液に用いら
れる有機溶媒について説明すると、この有機溶媒
としては、メタノール、エタノール、プロパノー
ル、ブタノール等のアルコール類、酢酸メチルエ
ステル、酢酸エチルエステル等のエステル類、ジ
エチルエーテル等のエーテル類、アセトン、メチ
ルエチルケトン等のケトン類、エチルセロソルブ
等が一種または二種以上混合して用いられる。
本発明の透明導電膜形成用塗布液では、ビスア
セチルアセトナト−ジアルコキシジルコニウムと
導電性物質とは、それぞれの酸化物換算の重量比
で、0.01≦ZrO2/MOx≦1であるような量で用
いられることが好ましい(MOxは導電性物質を
酸化物として表わしたもの)。この値が0.01未満
であると、導電性物質の分散性および熱的安定性
が低下し、得られる被膜の透明性、密着性が悪く
なり、また塗布液の保存性、連続生産性が悪くな
るため好ましくない。また上記の値が1を越える
と、得られる被膜の透明性、密着性が悪くなり導
電性が低下するため好ましくない。またビスアセ
チルアセトナト−ジアルコキシジルコニウムと、
シリコンアルコキシドとは、それぞれの酸化物換
算の重量比で、0.01≦ZrO2/SiO2≦1であるよ
うな量で用いられることが好ましい。この値が
0.01未満では、被膜の耐アルカリ性が十分でな
く、一方1を越えると密着性および透明性が低下
するため好ましくない。
さらに導電性物質は、酸化物換算の重量比で、
0.5≦MOx/(SiO2+ZrO2)≦5を満足するよう
な量で用いられることが好ましい。この値が0.5
未満では、導電性が十分でなく、また5を越える
と密着性、透明性、耐擦傷性が低下するため好ま
しくない。
本発明の透明導電膜形成用塗布液の固形分濃度
(MOx+SiO2+ZrO2)は、15重量%以下であれ
ば、本発明の目的にかなつた被膜が得られる。上
記の固形分濃度が15重量%を越すと、塗布液の保
存性が悪くなるため好ましくない。また、上記の
固形分濃度があまりに薄いと目的の膜厚を得るの
に数回の塗布操作を繰返すことが必要となるた
め、固形分濃度は0.1重量%以上であることが実
用的である。
次に本発明に係る透明導電膜形成用塗布液の製
造方法について説明すると、本発明の透明導電膜
形成用塗布液は、導電性物質を分散した水および
有機溶媒混合液に、ビスアチセルアセトナト−ジ
アルコキシジルコニウムを加えて導電性物質の分
散性および熱安定性を向上させた後に、シリコン
アルコキシドの部分加水分解物を添加することに
より製造される。ビスアチセルアセトナト−ジア
ルコキシジルコニウムを加える前にシリコンアル
コキシドを添加すると、導電性物質が凝集するた
め好ましくない。
このようにして製造された本発明の透明導電膜
形成用塗布液は、塗布液中で導電性物質がビスア
セチルアセトナト−ジアルコキシジルコニウムの
保護コロイド的作用により、第一に単分散状態が
保たれ、被膜の透明性および導電性に優れる。第
二に安定性が向上しているため、連続生産時に、
塗布液のゲル化が起こらず、さらに30℃程の室温
でも長期保存が可能である。またビスアセチルア
セトナト−ジアルコキシジルコニウムは、シリコ
ンアルコキシドの部分加水分解物とともに被膜の
マトリツクスとなり、被膜の耐擦傷性、耐アルカ
リ性を高め、前記ビスアセチルアセトナト−ジア
ルコキシジルコニウムと、シリコンアルコキシド
の部分加水分解物とが存在することにより、約
150℃程度の温度で焼成すれば、被膜の形成が可
能であり、さらに200℃以上で焼成すれば導電性
がさらに向上した被膜が得られる。
本発明の透明導電膜形成用塗布液を用いて、被
膜を形成するには、従来公知の塗工法が採用で
き、たとえば、スピンナー法、スプレー法、バー
コード法等が適用でき、連続生産には、転写印刷
法等が最適である。たとえばロールコーターを使
用した場合には、20000枚以上の連続生産が可能
である。
本発明に係る透明導電膜形成用塗布液を、ガラ
ス、プラスチツク等の基材に塗工して得られる被
膜は、全光線透過率90%以上、ヘーズ5%以下と
極めて透明性に優れ、その導電性も表面抵抗が
103〜1010Ω/□と優れている。さらに耐擦傷性
および耐アルカリ性が高いので、被膜が擦られた
り、アルカリの影響がある用途にも使用できる。
したがつて本発明に係る透明導電膜形成用塗布液
から形成された被膜が設けられた基板は、帯電防
止性に優れ、たとえば、CRT、LCDの表示機器
の前面基材、ADFを備えた複写機の天板ガラス、
計器パネル、透明デジタイザー、テレライテイン
グターミナル等に用いられる。
発明の効果
本発明の透明導電膜形成用塗布液は、導電性物
質を分散した水および有機溶媒混合液に、ビスア
セチルアセトナト−ジアルコキシジルコニウムを
加えて導電性物質の分散性および熱安定性を向上
させた後、シリコンアルコキシドの部分加水分解
物を添加し、均一分散させている。そのため、30
℃程の室温でも安定性に優れ、長期間にわたつて
保存することができ、しかもこの塗布液を用いて
形成される導電性被膜は、連続生産が可能であ
り、150℃以上で焼成すれば、透明性、導電性、
密着性、耐擦傷性、耐アルカリ性に優れた被膜が
得られる。
以下本発明を実施例によつて説明するが、本発
明はこれら実施例に限定されるものではない。
実施例
[シリコンアルコキシドの部分加水分解物の調
製]
A液
エチルシリケート−28(多摩化学工業製)、100
gを撹拌しながら、エタノール110gを加え、さ
らに2.5重量%の硝酸水溶液70gを添加した。そ
の後混合液を60℃に加熱して1時間保持した。
B液
エチルシリケート−40(多摩化学工業製)、100
gを撹拌しながら、エタノール200gを加え、さ
らに1.0重量%の酢酸水溶液100gを添加した。そ
の後混合液を40℃に加熱して30分間保持した。
[導電性物質の調製]
C液
錫酸カリウム316gと吐酒石38.4gとを、水686
gに溶解して原料液を調製した。50℃に加熱され
て撹拌下にある1000gの水に前記の原料液を硝酸
とともに12時間かけて添加し、系内のPHを8.5に
保持して加水分解させてゾルを得た。このゾルか
らコロイド粒子を濾別し、洗浄して副生塩を除去
した後、粒子を乾燥し、空気中350℃で3時間焼
成し、さらに空気中650℃で2時間焼成して微粉
末()を得た。この微粉末()20gを水100
gに分散させ、サンドミルで3時間粉砕し、平均
粒径0.3μmの分散液を得た。
なお、粒子の平均粒径は、超遠心粒度測定装置
(堀場製作所製、CAPA−500)を用い、測定試料
中の固形分濃度を0.5重量%に調整して、
5000rpmの遠心沈降で測定した。
D液
微粉末()400gを2.5重量%の水酸化カリウ
ム1600gに加え、この混合液を30℃に保持しなが
らサンドミルで3時間撹拌して、酸化錫コロイド
が分散したゾルを得た。ついでこのゾルをイオン
交換樹脂で処理して、脱アルカリされたゾルを得
た。そしてこのコロイドの平均粒径は、0.07μm
であり、0.1μm以下の粒子は、全粒子の87%であ
つた。
E液
硝酸インジウム79.9gを、水686gに溶解した
溶液と、錫酸カリウム12.7gを10重量%水酸化カ
リウム水溶液に溶かした溶液を調製した。50℃に
加熱されて撹拌下にある1000gの水に前記の硝酸
インジウム溶液と錫酸カリウム溶液を2時間かけ
て添加し、系内のPHを11に保持して加水分解させ
てゾルを得た。このゾルからコロイド粒子を濾別
し、洗浄して副生塩を除去した後、粒子を乾燥
し、空気中350℃で3時間焼成し、さらに空気中
600℃で2時間焼成して微粉末()を得た。こ
の微粉末()20gを水100gに分散させ、サン
ドミルで3時間粉砕し、平均粒径0.3μmの分散液
を得た。
実施例 1
D液100gにエタノール11.9gを加えて撹拌し
ながら、13重量%のジアセチルアセトナト−ジブ
トキシジルコニウム(ABZ)3.1gを添加した。
次いでA液70gを添加して充分に分散させた。
実施例2〜6および比較例1
表1の組成に変更した以外は、実施例1と同様
にした。
比較例 2
D液100gにエタノール11.9gを加えて撹拌し
ながら、A液70gを添加した。次いで13重量%の
ABZ3.1gを添加して分散させたが、数分後、コ
ロイド粒子の凝集が起り、粒子が沈澱した。
比較例 3
撹拌しながら35.7gのエチルシリケート28に、
エタノール447.3gを加え、さらに25重量%の硝
酸ジルコニル水溶液4gと水22gを添加した。次
いでD液100gを添加して充分分散した。
このようにして得られた透明導電膜形成用塗布
液を、表2に示すような基材にスピンナー法また
はロールコーター法により塗布して、焼成して被
膜を形成した。
この被膜について下記のような評価を行なつ
た。
評価方法
表面抵抗(Rs):ハイレスター又はローレス
ター(三菱油化(株)製)を用いて評価した。
透明性:全光線透過率(Tt)、ヘーズ(H)をヘ
ーズコンピユーター(スガ試験機製)で測定し
た。
光沢度:JIS K7105−81の光沢度の測定法に
おいて、測定角度60℃で光沢度(G)を測定した。
密着性:市販の12mm幅のセロテープの一部を
被膜に張りつけ、残りを被膜に対して直角に保
ち、瞬間的に引き剥がし、被膜の有無を目視し
た。
耐擦傷性:台秤の上に、被膜を形成したPC
(ポリカーボネート板)、あるいはガラス板を固
定し、事務用消しゴム(LION製No.50−50)を
被膜上に置き、2Kgの荷重をかけて、300回擦
つた後の全光線透過率、表面抵抗を測定した。
耐アルカリ性:15重量%アンモニア水に室温
で1週間漬けた後、密着性および表面抵抗を測
定した。
結果を表2に示す。
TECHNICAL FIELD OF THE INVENTION The present invention relates to a coating liquid for forming a transparent conductive film and a method for producing the same. Highly sexual,
The present invention relates to a coating solution for forming a transparent conductive film and a method for producing the same, which enables continuous production of extremely transparent conductive films at low temperatures of 150°C or higher. Technical background of the invention and its problems Glass and plastic are transparent base materials and are used for various purposes, but because they are insulators, they tend to generate static electricity on their surfaces. When these are used as front base materials for display devices such as cathode ray tubes (CRTs) and liquid crystal displays (LCDs), dirt and dust may adhere to them, making it difficult to see the image, and in electronic displays such as LCDs, they may malfunction. There is also a risk of it happening. Furthermore, in a copying machine 1 equipped with an automatic document feeder (ADF) as shown in FIG. 1, static electricity is generated on the top glass 2 while documents are being fed, which causes paper jams and prevents continuous feeding of documents. It's gone,
Furthermore, when the original is moved over the top glass 2 by the ADF, it scratches the top glass 2, which impairs its transparency, resulting in problems such as a lack of sharpness in the resulting copied image. Furthermore, plastic substrates have low surface hardness and are easily scratched, reducing the transparency of the substrate. In order to solve these problems, for example, on a substrate such as glass or plastic,
Methods of forming metal thin films or conductive inorganic oxide films using vapor phase methods such as CVD, PVD, and vapor deposition are being studied. However, although these films have excellent transparency and conductivity, they have a problem in that they have low alkali resistance and are easily scratched due to poor scratch resistance. In addition, vacuum evaporation equipment is required to form these films, and this equipment limits the area or shape of the substrate on which the film can be formed. Furthermore, it cannot be formed at low temperatures, and it requires a batch process. Therefore, continuous productivity was poor. In order to solve the problem, there is also a method of applying a conductive paint, in which a conductive substance is dispersed in a binder resin such as acrylic resin, vinyl resin, amine resin, or melamine resin, to the surface of the substrate. It is being considered. However, films obtained using conductive paints in which a conductive substance is dispersed in a binder resin have excellent conductivity, but are inferior in transparency, alkali resistance, scratch resistance, and adhesion. . By the way, the present applicant has previously filed a patent application filed in 1983-
No. 299686 discloses a coating solution for forming a conductive film in which a zirconium oxy salt, a silicon alkoxide or its derivative, and a conductive substance are uniformly dispersed in water or an organic solvent, or a coating solution in which non-sedimentable silica is mixed with the coating solution. suggested liquid. A coating film is formed on the substrate using these coating solutions, and this coating film is coated at 250°C.
Films obtained by firing at temperatures above ℃ are excellent in transparency, conductivity, scratch resistance, etc., but if the temperature during firing is below 250℃, the alkali resistance of the resulting film is poor. The present inventors found that this decreases. Therefore, it has been difficult to apply the above-mentioned coating liquid for forming a conductive film to plastics. Furthermore, due to the low thermal stability of the coating solution, the coating solution gels during coating, especially during continuous production using transfer printing, making continuous production impossible. It was my fault.
Moreover, the inventor discovered that there is a problem in that the coating solution must be kept at 15°C or lower when stored for a long period of time, and it is desired to solve these problems. There is. Purpose of the Invention The present invention is intended to solve the above-mentioned problems, and is to apply a material to the surface of a substrate such as glass or plastic that has excellent adhesion to the substrate, has high alkali resistance and scratch resistance, and has extremely high alkali resistance and scratch resistance. The object of the present invention is to provide a coating solution for forming a transparent conductive film and a method for producing the same, which allows continuous production of a transparent conductive film without baking at high temperatures. Summary of the Invention The coating liquid for forming a transparent conductive film according to the present invention comprises bisacetylacetonatodialkoxyzirconium, a partial hydrolyzate of silicon alkoxide,
It is characterized in that the conductive substance is uniformly dispersed in a mixed solvent consisting of water and an organic solvent. In this coating solution for forming a transparent conductive film, the agglomeration of the conductive substance and gelation due to heat are prevented by adding bisacetylacetonato-dialkoxyzirconium, and the dispersibility of the conductive substance is improved, thereby obtaining the desired result. The transparency of the coatings produced has improved, and continuous production of coatings has become possible. Furthermore, since the coating liquid for forming a transparent conductive film according to the present invention contains a partial hydrolyzate of silicon alkoxide, it has excellent adhesion to the substrate and can form a film at a low temperature of about 150°C. , a coating with excellent alkali resistance and scratch resistance can be obtained. Further, the method for producing a coating liquid for forming a transparent conductive film according to the present invention includes adding bisacetylacetonato-dialkoxyzirconium to a mixture of water and an organic solvent in which a conductive substance is dispersed, and then adding a partially hydrolyzed silicon alkoxide to a mixture of water and an organic solvent in which a conductive substance is dispersed. It is characterized by being mixed and uniformly dispersed. DETAILED DESCRIPTION OF THE INVENTION The coating solution for forming a transparent conductive film and the method for producing the same according to the present invention will be specifically described below. The coating liquid for forming a transparent conductive film according to the present invention includes bisacetylacetonatodialkoxyzirconium, a partial hydrolyzate of silicon alkoxide,
A conductive substance is uniformly dispersed in a mixed solvent consisting of water and an organic solvent, and each component will be explained below. The bisacetylacetonato-dialkoxyzirconium may have an alkoxy group having 1 to 8 carbon atoms, and a butoxy group is particularly preferred. In the coating solution for forming a transparent conductive film according to the present invention, bisacetylacetonato-dialkoxyzirconium plays a role in improving the dispersibility and thermal stability of the conductive substance, but it acts as a protective colloid for the conductive substance. It is assumed that this is because it plays a role. Silicon alkoxide has 1 to 8 carbon atoms.
SiH a (OR) b having 1 to 4 alkoxy groups
(a=0-3, b=1-4, a+b=4, R is an alkyl group), or (R'O) a Si(OR) b or R' a
Si(OR) b (a=1~3, b=1~3, a+b=
4, R and R' are alkyl groups), condensates thereof (up to pentamer), or derivatives in which a part of H in the above formula is substituted with Cl, a vinyl group, etc. are used. Among these, especially Si
(OR) 4 (R is a methyl group, an ethyl group, a propyl group,
butyl group) is preferred. Furthermore, it is possible to use one kind or a mixture of two or more kinds of compounds represented by the above formula. As conditions for partial hydrolysis, general methods for partially hydrolyzing silicon alkoxide can be adopted, such as mixing silicon alkoxide with methanol or ethanol and adding water and acid or alkali to perform partial hydrolysis. Although any conditions can be adopted, the following conditions are particularly preferred.
That is, using hydrochloric acid, nitric acid, phosphoric acid, and acetic acid as acids, the mixing ratio of acid and silicon alkoxide is as follows:
0.01≦acid/SiO 2 ≦0.5 (silicon alkoxide
(weight ratio when converted to SiO 2 ). If this value is less than 0.01, a large amount of unreacted silicon alkoxide will be present, which will inhibit the conductivity of the resulting film, which is undesirable, and if it exceeds 0.5,
This is not preferable because the rate of partial hydrolysis becomes too high, resulting in decreased continuous productivity and storage stability of the coating solution. Further, the mixing ratio of water is preferably H 2 O/silicon alkoxide≧2 (molar ratio).
If this value is less than 2, unreacted silicon alkoxide remains in the coating, which deteriorates adhesion, scratch resistance, and alkali resistance, which is not preferable. The partial hydrolysis temperature is preferably 30 to 60°C. As the conductive substance, tin oxide, tin oxide doped with antimony, phosphorus, fluorine, etc., indium oxide, or indium oxide doped with tin or fluorine is used, and the average particle size of these conductive substances is The diameter is preferably 0.4 μm or less. Such fine particles are described in the "Method for Manufacturing Conductive Fine Powder" (patent application filed by the applicant), which was previously filed by the applicant.
62-51008) is preferred.
(Hereinafter, the fine particles obtained based on this patent application No. 62-51008 will be referred to as the first fine particles.) In addition, for applications that require particularly low haze and high transparency, the average particle size is 0.01~ 0.1 μm conductive fine particles are optimal. Such fine particles can be produced, for example, in the patent application “Tin oxide sol and method for producing the same” (Japanese Patent Application No. 75283/1983) previously filed by the present applicant.
obtained based on. (Hereinafter referred to as this patent application No. 61-75283)
(The fine particles obtained based on the above-mentioned method are referred to as second fine particles.) First, the method for manufacturing the first fine particles will be explained. First, the first fine particles are produced by heating an aqueous solution containing a tin compound or an indium compound under a pH condition of 8 to 12. By holding and gradually hydrolyzing the tin or indium compound, a sol containing colloidal particles of metal oxide, hydrous oxide, or metal oxide was produced, and this sol was then dried and calcined. After that, it is obtained by crushing. As a starting material, a tin compound or an indium compound that is water-soluble and can be hydrolyzed within a pH range of 8 to 12 is used. Specifically, tin compounds such as potassium stannate and sodium stannate, and Indium compounds such as indium nitrate and indium sulfate are used. When the metal species contained in the aqueous solution containing a tin compound or an indium compound (hereinafter referred to as raw material liquid) is either tin or indium, the obtained first fine particles are composed of tin oxide or indium oxide. However, by dissolving a small amount of a different element in the raw material liquid, first fine particles doped with a different element can be manufactured. For example, by dissolving a small amount of tartarite or ammonium fluoride in a raw material solution containing a tin compound, it is possible to obtain first fine particles in which tin oxide is doped with antimony or fluorine. By dissolving a small amount of a tin compound in the raw material liquid, it is possible to obtain first fine particles in which indium oxide is doped with tin. The first fine particles doped with a different element can also be produced by the following method. That is, an aqueous solution of a tin compound is used as the raw material liquid, and the tin compound in the liquid is gradually hydrolyzed under the above PH conditions to generate a sol, and colloidal particles are collected from this sol. Tin oxide is doped with antimony, phosphorus, fluorine, etc. by impregnating the colloidal particles with an aqueous solution of at least one of an antimony compound, a phosphorus compound, and a fluorine compound, and then drying and calcining the particles. It is possible to produce the first fine particles. In addition, an aqueous solution of an indium compound is used as the raw material liquid, and a sol is generated in the same manner as above.
After collecting the colloidal particles from this sol, the colloidal particles are impregnated with an aqueous solution of a tin compound and/or a fluorine compound, and then the particles are dried and fired. The first doped with fluorine
Fine particles can be produced. In this case, if by-product salt is generated in the process of generating a sol, not only will the colloid particles be more likely to aggregate, but the resistivity of the first fine particles finally obtained will be lowered due to the contamination of the by-product salt. Therefore, if the formation of by-product salt is expected, the colloidal particles recovered from the sol,
It is recommended that by-product salts be removed from colloidal particles prior to impregnation with an aqueous solution of an elemental compound for doping. The concentration of the tin compound or indium compound contained in the raw material liquid can be arbitrarily selected, but
Generally, a range of 0.5 to 30% by weight is preferred. When hydrolyzing the tin compound or indium compound contained in the above-mentioned raw material liquid together with the compound of a different element as a dopant if it coexists, the pH of the reaction system should be set to 8 to 12.
must be held at an arbitrary constant value within the range of . If the pH of the reaction system is less than 8, the particle size distribution becomes broad, and if the pH value further decreases, metal oxides generated by hydrolysis precipitate and are dispersed in the liquid as colloidal particles. Therefore, it is not possible to prepare a sol, which is not preferable. In addition, if the pH of the reaction system exceeds 12, although it is not impossible to prepare a sol, the alkali content cannot be sufficiently removed when washing the colloid particles filtered from the sol, resulting in This is not preferable because the conductivity of the first fine particles obtained is deteriorated. There are no particular restrictions on the solids concentration of the sol produced in the reactor, but generally, as the concentration increases, the particle size distribution of the colloid particles produced tends to become broader. The reaction temperature for hydrolysis can be arbitrarily selected, usually in the range of 30 to 90°C. The average particle size of colloidal particles obtained by hydrolysis is 0.05 to 0.3 μm, preferably 0.07 to 0.3 μm.
It is in the range of 0.2 μm, and the particle size distribution is 80% of all particles.
The above range is 0.5 to 1.5 times the average particle size. After the sol is prepared, the sol is filtered to collect colloidal particles, washed to remove by-product salts and other particles adhering to the particles, dried, further calcined, and pulverized. First fine particles can be obtained. Since the particles filtered from the sol are slightly sintered in the firing process, the average particle size of the first fine particles is usually about 20 to 50 μm, and the specific surface area of the first fine particles is usually 100 m 2 /g or less. It is. The first fine particles obtained in this way are also
The sintered state can be easily released by pulverization, and first fine particles having an average particle size of 0.4 μm or less in the coating liquid can be obtained by ordinary pulverization means. The first fine particles thus obtained contain only a small amount of coarse particles of 0.8 μm or more. The first fine particles may be pulverized before or after mixing with other components such as silicon alkoxide. The first fine particles can be pulverized by a conventionally known pulverization method, and for example, equipment such as an attritor, a sand mill, a ball mill, and a three-roll mill can be used. Next, to explain the second fine particles, this second fine particle
The fine particles are fine particles dispersed in a conductive tin oxide colloid obtained by heat-treating tin oxide or fine powder of tin oxide doped with a different element in an aqueous acid solution or aqueous alkaline solution. The fine powder of tin oxide or different element-doped tin oxide used here is one that has been fired at a high temperature in order to impart conductivity, and may be obtained by the method for producing the first fine particles, or may be one obtained by the conventionally known method for producing the first fine particles. It may be obtained by a method. This conductive tin oxide colloid can be obtained in the following manner. That is, the tin oxide or the fine powder of tin oxide doped with a different element is heat-treated in an aqueous solution of an acid such as a mineral acid or an organic acid, or an aqueous alkali solution of an alkali metal hydroxide or quaternary ammonium. Preferably, the heating temperature is about 200°C or less. The amount of acids and alkalis should also be at least 5% by weight of the fine powder to be treated.
It is preferable that it is above. The colloidal particles in the conductive tin oxide colloid thus obtained usually have an average particle size of 0.1 μm or less, with more than 60% of all particles being 0.1 μm.
It is dominated by particles smaller than m. When the conductive substance of the first fine particles or second fine particles thus obtained is a powder, it can be used as it is, or it can be used after being dispersed in water or an organic solvent. The conductive tin oxide colloid in which the second fine particles are dispersed is an aqueous sol using water as a dispersion medium, but it can also be used as it is, or if necessary, some or all of the water can be replaced with an organic solvent such as alcohol. It can also be used as an organic sol substituted with Next, the organic solvent used in the coating solution for forming a transparent conductive film of the present invention is explained. Examples of this organic solvent include alcohols such as methanol, ethanol, propanol, and butanol, and esters such as methyl acetate and ethyl acetate. , ethers such as diethyl ether, ketones such as acetone, methyl ethyl ketone, ethyl cellosolve, etc. may be used singly or in combination of two or more. In the coating solution for forming a transparent conductive film of the present invention, the bisacetylacetonato-dialkoxyzirconium and the conductive substance have a weight ratio of 0.01≦ZrO 2 /MO x ≦1 in terms of their respective oxides. Preferably, it is used in amounts (MO x is the electrically conductive substance expressed as an oxide). If this value is less than 0.01, the dispersibility and thermal stability of the conductive substance will decrease, the resulting film will have poor transparency and adhesion, and the storage stability and continuous productivity of the coating solution will deteriorate. Therefore, it is undesirable. Moreover, if the above value exceeds 1, the transparency and adhesion of the obtained film will deteriorate and the conductivity will decrease, which is not preferable. Also, bisacetylacetonatodialkoxyzirconium,
The silicon alkoxide is preferably used in an amount such that 0.01≦ZrO 2 /SiO 2 ≦1 in terms of weight ratio of each oxide. This value
If it is less than 0.01, the alkali resistance of the coating will not be sufficient, while if it exceeds 1, adhesion and transparency will decrease, which is not preferable. Furthermore, the weight ratio of the conductive substance in terms of oxide is
It is preferable to use an amount that satisfies 0.5≦MO x /(SiO 2 +ZrO 2 )≦5. This value is 0.5
If it is less than 5, the conductivity will not be sufficient, and if it exceeds 5, the adhesion, transparency, and scratch resistance will deteriorate, which is not preferable. If the solid content concentration (MO x +SiO 2 +ZrO 2 ) of the coating liquid for forming a transparent conductive film of the present invention is 15% by weight or less, a film that meets the purpose of the present invention can be obtained. If the above solid content concentration exceeds 15% by weight, the storage stability of the coating solution will deteriorate, which is not preferable. Furthermore, if the solid content concentration is too low, it will be necessary to repeat the coating operation several times to obtain the desired film thickness, so it is practical that the solid content concentration is 0.1% by weight or more. Next, the method for producing the coating liquid for forming a transparent conductive film according to the present invention will be explained. It is manufactured by adding a partial hydrolyzate of silicon alkoxide after adding nato-dialkoxy zirconium to improve the dispersibility and thermal stability of the conductive material. It is not preferable to add silicon alkoxide before adding bisacyl acetonate-dialkoxyzirconium because the conductive material will aggregate. In the coating solution for forming a transparent conductive film of the present invention produced in this manner, the conductive substance is first maintained in a monodisperse state due to the protective colloidal action of bisacetylacetonatodialkoxyzirconium. Excellent dripping, film transparency and conductivity. Secondly, stability is improved, so during continuous production,
The coating solution does not gel, and can be stored for long periods at room temperatures of around 30°C. In addition, the bisacetylacetonato-dialkoxyzirconium forms a matrix of the film together with the partial hydrolyzate of silicon alkoxide, and increases the scratch resistance and alkali resistance of the film. Due to the presence of hydrolyzate, approx.
A film can be formed by firing at a temperature of about 150°C, and a film with further improved conductivity can be obtained by firing at a temperature of 200°C or higher. To form a film using the coating liquid for forming a transparent conductive film of the present invention, conventionally known coating methods can be used, such as a spinner method, a spray method, a barcode method, etc. , transfer printing method, etc. are most suitable. For example, if a roll coater is used, continuous production of 20,000 sheets or more is possible. The film obtained by applying the coating liquid for forming a transparent conductive film according to the present invention to a base material such as glass or plastic has excellent transparency with a total light transmittance of 90% or more and a haze of 5% or less. Conductivity and surface resistance
It is excellent at 10 3 to 10 10 Ω/□. Furthermore, since it has high scratch resistance and alkali resistance, it can be used in applications where the coating is abraded or affected by alkali.
Therefore, the substrate provided with the coating formed from the coating liquid for forming a transparent conductive film according to the present invention has excellent antistatic properties, and can be used, for example, as a front base material for CRT and LCD display devices, and for copying devices equipped with ADF. machine top glass,
Used for instrument panels, transparent digitizers, telewriting terminals, etc. Effects of the Invention The coating solution for forming a transparent conductive film of the present invention improves the dispersibility and thermal stability of the conductive substance by adding bisacetylacetonatodialkoxyzirconium to a mixture of water and an organic solvent in which a conductive substance is dispersed. After improving the temperature, a partial hydrolyzate of silicon alkoxide is added and uniformly dispersed. Therefore, 30
It has excellent stability even at room temperatures of about 150°C and can be stored for long periods of time.Moreover, the conductive film formed using this coating solution can be produced continuously, and if fired at temperatures above 150°C, , transparency, conductivity,
A film with excellent adhesion, scratch resistance, and alkali resistance can be obtained. EXAMPLES The present invention will be explained below with reference to Examples, but the present invention is not limited to these Examples. Example [Preparation of partial hydrolyzate of silicon alkoxide] Solution A Ethyl silicate-28 (manufactured by Tama Chemical Industries), 100
While stirring the mixture, 110 g of ethanol was added, and 70 g of a 2.5% by weight aqueous nitric acid solution was further added. The mixture was then heated to 60°C and held for 1 hour. B liquid Ethyl silicate-40 (manufactured by Tama Chemical Industry), 100
While stirring the mixture, 200 g of ethanol was added, and 100 g of a 1.0% by weight acetic acid aqueous solution was further added. The mixture was then heated to 40°C and held for 30 minutes. [Preparation of conductive substance] Solution C: 316 g of potassium stannate and 38.4 g of tartarite, 686 g of water
A raw material solution was prepared by dissolving it in g. The above raw material solution was added to 1000 g of water heated to 50° C. and stirred over 12 hours together with nitric acid, and the pH in the system was maintained at 8.5 for hydrolysis to obtain a sol. After filtering the colloidal particles from this sol and washing to remove by-product salts, the particles are dried and calcined in the air at 350℃ for 3 hours, and further calcined in the air at 650℃ for 2 hours to form a fine powder. ) was obtained. 20g of this fine powder () in 100ml of water
g, and ground in a sand mill for 3 hours to obtain a dispersion with an average particle size of 0.3 μm. The average particle size of the particles was determined by adjusting the solid content concentration in the measurement sample to 0.5% by weight using an ultracentrifugal particle size analyzer (manufactured by Horiba, CAPA-500).
It was measured by centrifugal sedimentation at 5000 rpm. Solution D: 400 g of fine powder () was added to 1,600 g of 2.5% by weight potassium hydroxide, and the mixture was stirred in a sand mill for 3 hours while maintaining it at 30° C. to obtain a sol in which tin oxide colloid was dispersed. This sol was then treated with an ion exchange resin to obtain a dealkalized sol. The average particle size of this colloid is 0.07 μm.
Particles with a diameter of 0.1 μm or less accounted for 87% of all particles. Solution E A solution of 79.9 g of indium nitrate dissolved in 686 g of water and a solution of 12.7 g of potassium stannate dissolved in a 10% by weight aqueous potassium hydroxide solution were prepared. The above indium nitrate solution and potassium stannate solution were added over 2 hours to 1000 g of water heated to 50°C and stirred, and the PH in the system was maintained at 11 for hydrolysis to obtain a sol. . Colloidal particles are filtered from this sol, washed to remove by-product salts, dried, and calcined in air at 350°C for 3 hours.
A fine powder () was obtained by firing at 600°C for 2 hours. 20 g of this fine powder () was dispersed in 100 g of water and ground in a sand mill for 3 hours to obtain a dispersion having an average particle size of 0.3 μm. Example 1 11.9 g of ethanol was added to 100 g of Solution D, and while stirring, 3.1 g of 13% by weight diacetylacetonato-dibutoxyzirconium (ABZ) was added.
Next, 70 g of liquid A was added and thoroughly dispersed. Examples 2 to 6 and Comparative Example 1 The same procedure as Example 1 was carried out except that the composition was changed to that shown in Table 1. Comparative Example 2 11.9 g of ethanol was added to 100 g of Solution D, and while stirring, 70 g of Solution A was added. Then 13% by weight
3.1 g of ABZ was added and dispersed, but after a few minutes, colloidal particles agglomerated and precipitated. Comparative Example 3 Add 35.7g of ethyl silicate 28 while stirring.
447.3 g of ethanol was added, and further 4 g of a 25% by weight aqueous zirconyl nitrate solution and 22 g of water were added. Next, 100 g of Solution D was added and thoroughly dispersed. The thus obtained coating liquid for forming a transparent conductive film was applied to the substrates shown in Table 2 by a spinner method or a roll coater method, and baked to form a film. This film was evaluated as follows. Evaluation method Surface resistance (R s ): Evaluated using Highrester or Lowrester (manufactured by Mitsubishi Yuka Co., Ltd.). Transparency: Total light transmittance (Tt) and haze (H) were measured using a haze computer (manufactured by Suga Test Instruments). Glossiness: Glossiness (G) was measured at a measurement angle of 60°C according to the glossiness measurement method of JIS K7105-81. Adhesion: A part of commercially available cellophane tape with a width of 12 mm was pasted on the film, the rest was held perpendicular to the film, and it was instantly peeled off, and the presence or absence of the film was visually observed. Scratch resistance: PC with a coating formed on the platform scale
(Polycarbonate plate) or glass plate is fixed, an office eraser (No. 50-50 made by LION) is placed on the coating, a load of 2 kg is applied, and the total light transmittance and surface resistance after rubbing 300 times. was measured. Alkali resistance: After soaking in 15% by weight aqueous ammonia at room temperature for one week, adhesion and surface resistance were measured. The results are shown in Table 2.
【表】
3. メチセロ=メチルセロソルブ。
4. 硝酸ジルコ=硝酸ジルコニル。
5. ES−28=エチルシリケート−28。
6. BuOH/MeOH、EtOH/メチセロの重量比=1/1
。
[Table] 3. Meticello = methyl cellosolve.
4. Zirco nitrate = zirconyl nitrate.
5. ES-28 = ethyl silicate-28.
6. Weight ratio of BuOH/MeOH, EtOH/methicello = 1/1
.
【表】
比較例1は、形成された膜が白くなり、Tt、
H、Gを測定できない。また密着性不良のため、
耐擦傷性、耐アルカリ性は、測定してない。
比較例2の塗布液は、塗布液中の酸化錫コロイ
ドが凝集し、沈澱したため塗膜を形成できない。
PC=ポリカーボネート板。ガラス=ガラス板。
スピンナーの回転数は、2000rpm。[Table] In Comparative Example 1, the formed film became white and Tt,
Unable to measure H and G. Also, due to poor adhesion,
Scratch resistance and alkali resistance were not measured. The coating solution of Comparative Example 2 could not form a coating film because the tin oxide colloid in the coating solution coagulated and precipitated.
PC = polycarbonate board. Glass = glass plate.
The rotation speed of the spinner is 2000 rpm.
第1図は、本発明に係る透明導電膜形成用塗布
液が塗布された基板が用いられる複写機の斜視図
である。
1……複写機、2……天板ガラス。
FIG. 1 is a perspective view of a copying machine using a substrate coated with a coating liquid for forming a transparent conductive film according to the present invention. 1...copy machine, 2...top glass.
Claims (1)
コニウムと、シリコンアルコキシドの部分加水分
解物と、導電性物質とが、水および有機溶媒から
なる混合溶媒中に均一分散していることを特徴と
する透明導電膜形成用塗布液。 2 導電性物質を分散した水および有機溶媒混合
液に、ビスアセチルアセトナト−ジアルコキシジ
ルコニウムを加え、次いでシリコンアルコキシド
の部分加水分解物を混合し、均一に分散させたこ
とを特徴とする透明導電膜形成用塗布液の製造方
法。[Claims] 1. A bisacetylacetonatodialkoxyzirconium, a partial hydrolyzate of silicon alkoxide, and a conductive substance are uniformly dispersed in a mixed solvent consisting of water and an organic solvent. A coating liquid for forming a transparent conductive film. 2. A transparent conductive material characterized by adding bisacetylacetonatodialkoxyzirconium to a mixture of water and an organic solvent in which a conductive substance is dispersed, and then mixing a partial hydrolyzate of silicon alkoxide and uniformly dispersing the mixture. A method for producing a coating liquid for film formation.
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62211096A JPS6454613A (en) | 1987-08-25 | 1987-08-25 | Application liquid for forming transparent superconductive film and manufacture thereof |
| EP88901470A EP0301104B1 (en) | 1987-02-10 | 1988-02-09 | Coating fluid for forming electroconductive coat |
| KR1019880701253A KR920006597B1 (en) | 1987-02-10 | 1988-02-09 | Coating liquid for conductive film formation |
| US07/298,607 US5078915A (en) | 1987-02-10 | 1988-02-09 | Coating liquids for forming conductive coatings |
| SG1996001744A SG40822A1 (en) | 1987-02-10 | 1988-02-09 | Coating liquids for forming conductive coatings |
| PCT/JP1988/000122 WO1988006331A1 (en) | 1987-02-10 | 1988-02-09 | Coating fluid for forming electroconductive coat |
| DE3855617T DE3855617T2 (en) | 1987-02-10 | 1988-02-09 | COATING LIQUID FOR FORMING AN ELECTRICALLY CONDUCTIVE LAYER |
| US07/746,403 US5270072A (en) | 1987-02-10 | 1991-08-16 | Coating liquids for forming conductive coatings |
| US07/746,406 US5256484A (en) | 1987-02-10 | 1991-08-16 | Substrate having a transparent coating thereon |
| US07/746,402 US5273828A (en) | 1987-02-10 | 1991-08-16 | Coating liquids for forming conductive coatings |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62211096A JPS6454613A (en) | 1987-08-25 | 1987-08-25 | Application liquid for forming transparent superconductive film and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6454613A JPS6454613A (en) | 1989-03-02 |
| JPH0353728B2 true JPH0353728B2 (en) | 1991-08-16 |
Family
ID=16600346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62211096A Granted JPS6454613A (en) | 1987-02-10 | 1987-08-25 | Application liquid for forming transparent superconductive film and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6454613A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5443786A (en) * | 1989-09-19 | 1995-08-22 | Fujitsu Limited | Composition for the formation of ceramic vias |
| DE102004030104A1 (en) * | 2004-06-22 | 2006-01-12 | Degussa Ag | Aqueous / organic metal oxide dispersion and with coated substrates and moldings produced therewith |
-
1987
- 1987-08-25 JP JP62211096A patent/JPS6454613A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6454613A (en) | 1989-03-02 |
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