JPH0354458B2 - - Google Patents
Info
- Publication number
- JPH0354458B2 JPH0354458B2 JP58224122A JP22412283A JPH0354458B2 JP H0354458 B2 JPH0354458 B2 JP H0354458B2 JP 58224122 A JP58224122 A JP 58224122A JP 22412283 A JP22412283 A JP 22412283A JP H0354458 B2 JPH0354458 B2 JP H0354458B2
- Authority
- JP
- Japan
- Prior art keywords
- exhaust pipe
- valve
- vacuum
- vacuum chamber
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
〔発明の利用分野〕
本発明は、真空処理装置に係り、特に、基板を
処理する真空処理装置に関するものである。
〔発明の背景〕
従来の真空処理装置としては、第１図に示す方
式のものが開示されている。（昭和55年７月、産
業図書出版、〓半導体プラズマプロセス技術”、
特開昭56−77381号公報等）。
前記開示の方法は、基板の処理の前後に真空室
１を高真空に排気する高真空排気装置５と基板を
処理中の圧力制御をする排気装置８とを具備して
いるが、次のような欠点を有している。
(1) ２系統の排気装置を有しているが、圧力制御
には１系統しか使用できない。
(2) 圧力制御は、ポンプに制約され、低真空領域
の狭い範囲に限定されてしまうこと。
〔発明の目的〕
本発明の目的は、基板の真空処理に要求される
低真空から高真空まで広範囲の圧力制御が可能な
排気手段を有する真空処理装置を提供することに
ある。
〔発明の概要〕
本発明は、真空中で基板を処理する機能を有す
る真空室と、該真空室へ処理ガスを供給する手段
と、排気管により前記真空室に連結された低真空
排気手段と、排気管により前記真空室に連結され
た高真空排気手段と、前記排気管の一方の排気管
に設けられた可変コンダクタンスバルブと、電記
排気管の他方の排気管に設けられた他の可変コン
ダクタンスバルブと、前記可変コンダクタンスバ
ルブ及び他の可変コンダクタンスバルブの後流側
で前記排気管を連絡する排気連結管と、該排気連
絡管の連結位置の後流側で前記排気管にそれぞれ
設けられたバルブとを具備したことを特徴とする
もので、基板の真空処理に要求される低真空から
高真空まで広範囲な圧力制御を可能にしようとし
たものである。
〔発明の実施例〕
以下、本発明の真空処理装置をドライエツチン
グ装置として適用した一実施例を第２図により説
明する。
基板を真空中でドライエツチングする場合、対
象材料によつて低真空から高真空まで各種圧力下
で行うプロセスが開発されてきた。
本発明は、上記の要求を満足するために、基板
の処理の前後に真空室を排気する高真空排気装置
と圧力制御用の排気装置とを組合せて新しい排気
装置を構成するようにしたもので、この構成を第
２図に示す。
すなわち、高真空排気系をバルブ１０２ｅ、大
口径可変コンダクタンスバルブ１０４ａ，バルブ
１０２ｄ、高真空ポンプ１０５、バルブ１０２
ｃ、メカニカルブースタポンプ１０７並びに油回
転ポンプ１０８とで構成し、バルブ１０２ｅと大
口径可変コンダクタンスバルブ１０４ａの系にバ
ルブ１０２ａと小口径可変コンダクタンスバルブ
１０４ｂの系に並列に配設した。さらには、高真
空ポンプ１０５をバイパスする系をバルブ１０２
ｂによつて形成するようにした。すなわち、大小
口径可変コンダクタンスバルブ１０４ａ，１０４
ｂ並びにバルブ１０２ｄ，１０２ｂのそれぞれを
任意に選択することにより、プロセスに必要な圧
力を得られるようにしたものである。上述の排気
モードを表１に示す。
[Field of Application of the Invention] The present invention relates to a vacuum processing apparatus, and particularly to a vacuum processing apparatus for processing a substrate. [Background of the Invention] As a conventional vacuum processing apparatus, one of the type shown in FIG. 1 has been disclosed. (July 1980, Sangyo Tosho Publishing, “Semiconductor Plasma Process Technology”,
(Japanese Patent Application Laid-Open No. 56-77381, etc.). The disclosed method includes a high vacuum evacuation device 5 that evacuates the vacuum chamber 1 to high vacuum before and after processing the substrate, and an evacuation device 8 that controls the pressure during processing the substrate. It has some drawbacks. (1) Although it has two exhaust systems, only one system can be used for pressure control. (2) Pressure control is restricted to the pump and limited to a narrow range of low vacuum. [Object of the Invention] An object of the present invention is to provide a vacuum processing apparatus having an exhaust means capable of controlling pressure over a wide range from low vacuum to high vacuum required for vacuum processing of a substrate. [Summary of the Invention] The present invention comprises a vacuum chamber having a function of processing a substrate in vacuum, a means for supplying a processing gas to the vacuum chamber, and a low vacuum evacuation means connected to the vacuum chamber by an exhaust pipe. , a high vacuum evacuation means connected to the vacuum chamber by an exhaust pipe, a variable conductance valve provided on one of the exhaust pipes, and another variable conductance valve provided on the other exhaust pipe of the electric exhaust pipes. a conductance valve, an exhaust connecting pipe connecting the exhaust pipe on the downstream side of the variable conductance valve and other variable conductance valves, and an exhaust connecting pipe provided in the exhaust pipe on the downstream side of the connection position of the exhaust connecting pipe. It is characterized by being equipped with a valve, and is intended to enable pressure control over a wide range from low vacuum to high vacuum required for vacuum processing of substrates. [Embodiment of the Invention] Hereinafter, an embodiment in which the vacuum processing apparatus of the present invention is applied as a dry etching apparatus will be described with reference to FIG. When dry etching a substrate in a vacuum, processes have been developed in which the dry etching is performed under various pressures, from low vacuum to high vacuum, depending on the target material. In order to satisfy the above requirements, the present invention constitutes a new exhaust system by combining a high vacuum exhaust system for evacuating a vacuum chamber before and after substrate processing and an exhaust system for pressure control. , this configuration is shown in FIG. That is, the high vacuum exhaust system includes the valve 102e, the large diameter variable conductance valve 104a, the valve 102d, the high vacuum pump 105, and the valve 102.
c. It is composed of a mechanical booster pump 107 and an oil rotary pump 108, which are arranged in parallel to the system of the valve 102e and the large-diameter variable conductance valve 104a and the system of the valve 102a and the small-diameter variable conductance valve 104b. Furthermore, the system that bypasses the high vacuum pump 105 is replaced by the valve 102.
b. That is, the large and small diameter variable conductance valves 104a, 104
By arbitrarily selecting each of the valves 102d and 102b, the pressure necessary for the process can be obtained. The above exhaust modes are shown in Table 1.
以上詳述した如く、本発明によれば、可変コン
ダクタンスと排気ポンプ群の組合わせを選択する
ことによつて、低真空から高真空領域まで広範囲
の圧力制御が可能となつたので、プロセスの巾広
い要求に十分対応することができるので極めて有
効な圧力制御機能をもつ真空処理装置を提供でき
るという効果がある。
As described in detail above, according to the present invention, by selecting a combination of variable conductance and exhaust pump group, it is possible to control pressure over a wide range from low vacuum to high vacuum. Since it can sufficiently meet a wide range of demands, it has the effect of providing a vacuum processing apparatus with an extremely effective pressure control function.
第１図は、従来の真空処理装置の一実施例を示
す構成図、第２図は、本発明の真空処理装置のう
ちドライエツチング装置に適用した一実施例を示
す構成図である。
１，１０１……真空室、３……油拡散ポンプ、
２，１０６……LN2トラツプ、４，１０８……油
回転ポンプ、５……高真空排気装置、６，１０４
ａ，１０４ｂ……可変コンダクタンスバルブ、
７，１０７……メカニカルブースタポンプ、８…
…排気装置、１０２ａないし１０２ｅ……バル
ブ、１０３……ガス供給装置、１０５……高真空
ポンプ。
FIG. 1 is a block diagram showing an embodiment of a conventional vacuum processing apparatus, and FIG. 2 is a block diagram showing an embodiment of the vacuum processing apparatus of the present invention applied to a dry etching apparatus. 1,101...Vacuum chamber, 3...Oil diffusion pump,
2,106...LN 2 trap, 4,108...Oil rotary pump, 5...High vacuum exhaust device, 6,104
a, 104b...variable conductance valve,
7,107...Mechanical booster pump, 8...
...Exhaust device, 102a to 102e...Valve, 103...Gas supply device, 105...High vacuum pump.
Claims (1)
と、該真空室へ処理ガスを供給する手段と、前記
真空室を真空排気する手段と、前記処理ガスが供
給され前記基板が処理される真空室の処理圧力を
制御する手段とを備えた真空処理装置において、 前記処理圧力制御手段として、 一端が第１のバルブを介して前記真空室に連結
された第１の排気管と、 該第１の排気管の途中に設けられた大口径可変
コンダクタンスバルブと、 前記第１の排気管の他端に第２のバルブを介し
て吸気口が連結された高真空ポンプと、 該高真空ポンプの吐出口と低真空ポンプの吸気
口とを連結する第２の排気管と、 該第２の排気管の途中に設けられた第３のバル
ブと、 一端が前記真空室に連結され他端が前記大口径
可変コンダクタンスバルブと前記第２のバルブと
の間で前記第１の排気管に連結された第３の排気
管と、 該第３の排気管の途中に設けられた第４のバル
ブと、 該第４のバルブの後流側で前記第３の排気管に
設けられた小口径可変コンダクタンスバルブと、 一端が前記大口径可変コンダクタンスバルブと
前記第２のバルブとの間で前記第１の排気管に連
結され他端が前記第３のバルブの前流側で前記第
２の排気管に連結された第４の排気管と、 該第４の排気管の途中に設けられた第５のバル
ブとで成る圧力制御手段を備えたことを特徴とす
る真空処理装置。 ２ 前記真空室が、エツチング処理ガスが供給さ
れ真空中で前記基板をドライエツチング処理する
機能を有する特許請求の範囲第１項記載の真空処
理装置。[Scope of Claims] 1. A vacuum chamber having a function of processing a substrate in vacuum, means for supplying a processing gas to the vacuum chamber, means for evacuating the vacuum chamber, and a means for evacuating the vacuum chamber to which the processing gas is supplied. A vacuum processing apparatus comprising means for controlling a processing pressure in a vacuum chamber in which a substrate is processed, the processing pressure control means comprising a first exhaust gas whose one end is connected to the vacuum chamber via a first valve. a large-diameter variable conductance valve provided in the middle of the first exhaust pipe; a high vacuum pump having an intake port connected to the other end of the first exhaust pipe via a second valve; a second exhaust pipe connecting the discharge port of the high vacuum pump and the intake port of the low vacuum pump; a third valve provided in the middle of the second exhaust pipe; and one end connected to the vacuum chamber. a third exhaust pipe whose other end is connected to the first exhaust pipe between the large-diameter variable conductance valve and the second valve; and a third exhaust pipe provided in the middle of the third exhaust pipe. a small-diameter variable conductance valve provided in the third exhaust pipe on the downstream side of the fourth valve, and one end of which is connected between the large-diameter variable conductance valve and the second valve. a fourth exhaust pipe connected to the first exhaust pipe and whose other end is connected to the second exhaust pipe on the upstream side of the third valve; and a fourth exhaust pipe provided in the middle of the fourth exhaust pipe. A vacuum processing apparatus comprising a pressure control means comprising a fifth valve. 2. The vacuum processing apparatus according to claim 1, wherein the vacuum chamber has a function of dry etching the substrate in a vacuum to which an etching processing gas is supplied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58224122A JPS60117629A (en) | 1983-11-30 | 1983-11-30 | Vacuum processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58224122A JPS60117629A (en) | 1983-11-30 | 1983-11-30 | Vacuum processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60117629A JPS60117629A (en) | 1985-06-25 |
| JPH0354458B2 true JPH0354458B2 (en) | 1991-08-20 |
Family
ID=16808881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58224122A Granted JPS60117629A (en) | 1983-11-30 | 1983-11-30 | Vacuum processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60117629A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4739787A (en) * | 1986-11-10 | 1988-04-26 | Stoltenberg Kevin J | Method and apparatus for improving the yield of integrated circuit devices |
| JP2686447B2 (en) * | 1988-02-26 | 1997-12-08 | 東京エレクトロン株式会社 | Reactor |
| JPH02224231A (en) * | 1988-11-30 | 1990-09-06 | Tokyo Electron Ltd | Plasma processor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5516475A (en) * | 1978-07-21 | 1980-02-05 | Nec Corp | Plasma processing unit |
| JPS57133633A (en) * | 1981-02-13 | 1982-08-18 | Anelva Corp | Dry-etching device |
| JPS59114814A (en) * | 1982-12-21 | 1984-07-03 | Fujitsu Ltd | Vacuum exhausting method |
| JPS6091642A (en) * | 1983-10-25 | 1985-05-23 | Toshiba Corp | Vacuum device for semiconductor manufacture |
-
1983
- 1983-11-30 JP JP58224122A patent/JPS60117629A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60117629A (en) | 1985-06-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3501524B2 (en) | Vacuum exhaust system for processing equipment | |
| JP3486821B2 (en) | Processing apparatus and method of transporting object to be processed in processing apparatus | |
| KR100271758B1 (en) | Semiconductor device manufacturing equipment and method of driving the same | |
| EP1081380A4 (en) | Device and method for evacuation | |
| JP4183305B2 (en) | Backside gas rapid release device for semiconductor wafer processing equipment. | |
| JPH0354458B2 (en) | ||
| JP3020567B2 (en) | Vacuum processing method | |
| JP4521889B2 (en) | Substrate processing equipment | |
| JP3173681B2 (en) | Evacuation apparatus and method | |
| JPH0124224B2 (en) | ||
| JP2826479B2 (en) | Gas supply device and operation method thereof | |
| JP3347794B2 (en) | Semiconductor manufacturing equipment | |
| JP2715134B2 (en) | Processing method | |
| JP2551968B2 (en) | Exhaust system in vacuum equipment | |
| JPS59154025A (en) | Leaking method of reaction chamber of semiconductor manufacture equipment | |
| JP4582459B2 (en) | Vacuum device | |
| JPH08111381A (en) | Semiconductor processing equipment | |
| CN115206824A (en) | Controllable multi-air-inlet-pipeline combined air inlet device and etching method | |
| JP2000161215A (en) | Processing chamber with evacuation system | |
| JP3778296B2 (en) | Vacuum equipment | |
| JPS59231816A (en) | Dry-etching apparatus | |
| JPH09184482A (en) | Vacuum exhaust system configuration | |
| JPH0331U (en) | ||
| JPS63181324A (en) | Plasma treatment method and device | |
| JPH084102Y2 (en) | Vacuum device |