JPH0355038B2 - - Google Patents
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- Publication number
- JPH0355038B2 JPH0355038B2 JP60029052A JP2905285A JPH0355038B2 JP H0355038 B2 JPH0355038 B2 JP H0355038B2 JP 60029052 A JP60029052 A JP 60029052A JP 2905285 A JP2905285 A JP 2905285A JP H0355038 B2 JPH0355038 B2 JP H0355038B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- light emitting
- layer
- light
- emitting layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 239000010408 film Substances 0.000 claims description 69
- 229910007991 Si-N Inorganic materials 0.000 claims description 29
- 229910006294 Si—N Inorganic materials 0.000 claims description 29
- 239000010409 thin film Substances 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 23
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 17
- 239000002994 raw material Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 51
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006360 Si—O—N Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Description
【発明の詳細な説明】
＜技術分野＞
本発明は、薄膜発光素子の製造技術に関し、特
に薄膜発光層の両主面を誘電体層で被覆した三層
構造を１対の電極間に介設し、交流電界の印加に
応答してEL（Electro Luminescence）発光を生
起する薄膜発光素子における誘電体層の製造方法
に関するものである。[Detailed Description of the Invention] <Technical Field> The present invention relates to a technology for manufacturing a thin film light emitting device, and in particular, a method for manufacturing a thin film light emitting device in which a three-layer structure in which both main surfaces of a thin film light emitting layer are covered with dielectric layers is interposed between a pair of electrodes. The present invention relates to a method for manufacturing a dielectric layer in a thin film light emitting device that generates EL (Electro Luminescence) light emission in response to application of an alternating current electric field.
＜従来技術とその問題点＞
交流電界の印加に応答してEL発光を呈する薄
膜発光層を誘電体層でサンドイツチ状に挾設した
三層構造薄膜発光素子は高輝度特性を利用して
種々の表示装置や面発光源等に利用されている。
第２図は三層構造薄膜発光素子の基本構造を示す
構成図である。ガラス等の透光性基板１上に透明
電極２が帯状に複数本配列され、この上にSiO2
膜３とSi−Ｎ膜４から成る下部誘電体層、ZnS発
光母材にMn等の活性物質をドープした発光層
５、Si−Ｎ膜６とAl2O3膜７の重量層から成る上
部誘電体層が順次積層されて三層構造部が構成さ
れている。Al2O3膜７上には上記透明電極２と直
交する方向に帯状のAlから成る背面電極８が配
列され、背面電極８と透明電極２は交流電源９に
接続されてこの薄膜発光素子が駆動される。<Prior art and its problems> A three-layer structure thin-film light-emitting device in which a thin-film light-emitting layer that emits EL light in response to the application of an alternating current electric field is sandwiched between dielectric layers in a sandwich-like pattern makes use of its high luminance characteristics to enable various applications. It is used in display devices, surface light emitting sources, etc.
FIG. 2 is a block diagram showing the basic structure of a three-layer thin film light emitting device. A plurality of transparent electrodes 2 are arranged in a band shape on a transparent substrate 1 made of glass, etc., and SiO 2
A lower dielectric layer consisting of a film 3 and a Si-N film 4, a light-emitting layer 5 made of a ZnS light-emitting base material doped with an active substance such as Mn, and an upper layer consisting of a heavy layer of a Si-N film 6 and an Al 2 O 3 film 7. The dielectric layers are sequentially laminated to form a three-layer structure. On the Al 2 O 3 film 7, a strip-shaped back electrode 8 made of Al is arranged in a direction perpendicular to the transparent electrode 2, and the back electrode 8 and the transparent electrode 2 are connected to an AC power source 9, so that this thin film light emitting element Driven.
上記構造の薄膜発光素子において上部誘電体層
としては絶縁耐圧、誘電率、発光特性等の観点か
ら、非結晶の絶縁膜として知られているSi−Ｎ
（窒化シリコン）膜あるいはSi−Ｎ膜とAl2O3（ア
ルミナ）膜の複合膜が用いられている。このSi−
Ｎ膜は、通常Si（シリコン）ターゲツトをN2（窒
素）ガスでリアクテイブパツタリングして成膜さ
れ、Si3N4を基本形として形成される。しかしな
がら、このようにして得られたSi−Ｎ膜は次のよ
うな欠点を内包している。 In the thin-film light emitting device having the above structure, the upper dielectric layer is made of Si-N, which is known as an amorphous insulating film from the viewpoint of dielectric strength, dielectric constant, light emission characteristics, etc.
A (silicon nitride) film or a composite film of an Si-N film and an Al 2 O 3 (alumina) film is used. This Si−
The N film is usually formed by reactive sputtering of a Si (silicon) target with N 2 (nitrogen) gas, and is formed using Si 3 N 4 as its basic form. However, the Si-N film obtained in this way has the following drawbacks.
(1) 発光層上の微小突起や異物に対するカバレー
ジが悪い。(1) Poor coverage of microprotrusions and foreign objects on the light emitting layer.
(2) スパツタ時の２次電子の入射により発光層が
ダメージを受け、発光特性が変化し易い。(2) The light-emitting layer is damaged by the incidence of secondary electrons during sputtering, and the light-emitting characteristics are likely to change.
(3) 成膜速度が200Å／分と遅く、また高真空を
必要とするため、装置コストが高くなる。(3) The deposition rate is slow at 200 Å/min, and high vacuum is required, resulting in high equipment costs.
上記(1)の欠点によつて、発光層とSi−Ｎ膜間の
界面に湿気が浸透し易く、層間剥離の原因とな
る。(2)の欠点は表示装置としての実用化を困難に
し(3)の欠点は量産性を阻害する要因となる。 Due to the defect (1) above, moisture easily penetrates into the interface between the light emitting layer and the Si--N film, causing delamination. The drawback of (2) makes it difficult to put it into practical use as a display device, and the drawback of (3) becomes a factor that hinders mass production.
Si−Ｎ膜の成膜法としては、上記スパツタリン
グ法以外にプラズマCVD法を用いることができ
る。プラズマCVD法を用いる場合には、通常
SiH4（シラン）とNH3（アンモニア）の混合ガス
を原料ガスとしこの原料ガスよりSi−Ｎの成膜が
行なわれる。得られるSi−Ｎ膜はカバレージが良
好でスパツタリングのような２次電子の入射もな
く成膜速度も速いという利点を有するが、反面
SiH4とNH3の混合ガラス系では原料ガス中に含
まれるＨ（水素）の量が多く、Si−Ｎ膜中に多量
のSi−HnやＮ−Hnの如き水素化物が含有される
結果となる。またプラズマ中で生成される水素ラ
ジカルも多くこの水素ラジカルによつて下地の発
光層がダメージを受ける。即ち、水素ラジカルと
発光層母材のZnSが反応してZnS発光層表面のＳ
（イオウ）がH2Sとなつて奪われ、発光層表面に
Ｓ−ベイキヤンシイ（vacancy）が形成される。
その結果、SiH4とNH3の混合ガスを用いたプラ
ズマCVD法によるSi−Ｎ膜を上部誘電体層とし
た薄膜発光素子は、発光輝度が低下することとな
る。 As a method for forming the Si--N film, a plasma CVD method can be used in addition to the sputtering method described above. When using plasma CVD method, usually
A Si-N film is formed using a mixed gas of SiH 4 (silane) and NH 3 (ammonia) as a raw material gas. The resulting Si-N film has the advantages of good coverage, no incidence of secondary electrons such as sputtering, and a fast deposition rate.
In the mixed glass system of SiH 4 and NH 3 , the amount of H (hydrogen) contained in the raw material gas is large, resulting in a large amount of hydrides such as Si-Hn and N-Hn being contained in the Si-N film. Become. Furthermore, many hydrogen radicals are generated in the plasma, and the underlying light emitting layer is damaged by these hydrogen radicals. In other words, hydrogen radicals react with ZnS, which is the base material of the emissive layer, and S on the surface of the ZnS emissive layer is
(Sulfur) is converted into H 2 S and removed, and S-vacancy is formed on the surface of the light emitting layer.
As a result, a thin film light emitting device having an upper dielectric layer made of a Si--N film formed by plasma CVD using a mixed gas of SiH 4 and NH 3 has a reduced luminance.
＜発明の目的及び概要＞
本発明は上述の問題点に鑑み、発光層を下地層
としてこの上に被覆される誘電体層をSi−Ｎ膜で
形成する際に、SiH4（シラン）とN2（窒素）の混
合ガスを用いたプラズマCVD法を利用してSi−
Ｎ膜を成膜した後、この上にSiH4とNH3の混合
ガスを用いたプラズマCVD法を利用してSi−Ｎ
膜を重畳することにより、耐湿性、量産性及び輝
度特性の諸条件を満足する薄膜発光素子を作製す
ることのできる製造技術を提供することを目的と
する。<Objective and Summary of the Invention> In view of the above-mentioned problems, the present invention has been developed by using SiH 4 (silane) and N Si-
After forming the N film, Si-N is deposited on it using a plasma CVD method using a mixed gas of SiH 4 and NH 3 .
An object of the present invention is to provide a manufacturing technique that can produce a thin film light emitting element that satisfies various conditions of moisture resistance, mass productivity, and brightness characteristics by overlapping films.
＜実施例＞
以下、第１図を参照しながら本発明の１実施例
について説明する。<Example> An example of the present invention will be described below with reference to FIG.
ガワス基板１上に透明導電膜（ITO膜）を被着
後、帯状成形して複数本の透明電極２をパターン
形成する。次に、スパツタリング法または真空蒸
着法でSiO2膜３を厚さ200〜800Å程度に堆積し、
この上に更にスパツタリング法でSi−Ｎ膜４を厚
さ1000〜3000Å程度積層して下部誘電体層とす
る。SiO2膜３は下部誘電体層と透明電極２間の
密着力を強固にするために介層されるものであ
る。Si−Ｎ膜４上には発光層５を層設する。この
発光層５の形成は、発光層５の母材となるZnSに
発光センターとなるMn、Dy、Tmあるいはこれ
らの化合物を添加した焼結ペレツトを電子ビーム
蒸着することにより行なわれる。その膜厚は6000
〜8000Å程度に設定し、成膜後真空アニールす
る。次にこの発光層５を下地層としてこの上にSi
−Ｎ膜から成る上部誘電体層を２層に重畳形成
し、発光層５の両生面を上下部誘電体層で挾接し
た三層構造部を作製する。 After a transparent conductive film (ITO film) is deposited on the Gawas substrate 1, it is formed into a band shape to form a pattern of a plurality of transparent electrodes 2. Next, a SiO 2 film 3 is deposited to a thickness of about 200 to 800 Å using a sputtering method or a vacuum evaporation method.
On top of this, a Si--N film 4 is further laminated to a thickness of about 1000 to 3000 Å by sputtering to form a lower dielectric layer. The SiO 2 film 3 is provided as an interlayer to strengthen the adhesion between the lower dielectric layer and the transparent electrode 2. A light emitting layer 5 is provided on the Si--N film 4. The light-emitting layer 5 is formed by electron beam evaporation of sintered pellets in which Mn, Dy, Tm, or a compound thereof, which becomes a light-emitting center, is added to ZnS, which becomes a base material of the light-emitting layer 5. Its film thickness is 6000
The film thickness is set to about 8000 Å, and vacuum annealing is performed after film formation. Next, this light-emitting layer 5 is used as a base layer and Si
A three-layer structure is fabricated by forming two upper dielectric layers made of a -N film and sandwiching the bidirectional surfaces of the light-emitting layer 5 between the upper and lower dielectric layers.
ここで、上部誘電体層となるSi−Ｎ膜は発光層
５に接する側のSi−Ｎ膜１０をSiH4（シラン）と
N2（窒素）の混合ガスを用いたプラズマCVD法
によつて成膜する。SiH4とNH3の混合ガスを原
料ガスとするプラズマCVD法では、原料ガス中
の水素源がSiH4のみであるためプラズマ中で生
成する水素ラジカルの量が少なく、従来のSiH4
−NH3系原料ガスで見られた様なZnS発光層５の
表面のダメージは抑制される。従つて発光層５の
発光輝度特性は高く維持される。また、SiH4−
N2系原料ガスを用いたプラズマCVD法によるSi
−Ｎ膜１０もカバレージが追好で膜欠陥も少なく
耐湿保護膜として優れていることが確かめられ
た。成膜速度も200〜300Å／分程度の値を有しパ
ツタリング法の成膜速度よりも速い。但し、N2
の結合エネルギーはNH3のＮ−Ｈの結合エネル
ギーよりも高く、NH3に比べてN2の解離が難い
ためにSi−Ｎ膜の成膜速度には限界が生ずる。従
つて、本実施例ではSiH4とN2の混合ガスを用い
たプラズマCVD法によつて成膜するSi−Ｎ膜１
０を100〜800Å程度の厚さとし、この上にSiH4
とNH3の混合ガスを用いた成膜速度300〜600
Å／分程度のプラズマCVD法でSi−Ｎ膜１１を
積層して厚さ1500〜3000Å程度の厚さの２層構造
Si−Ｎ膜１０，１１から成る上部誘電体層を形成
する。発光輝度特性で重要な因子は発光層５とSi
−Ｎ膜１０間の界面状態であり、従つてSiH4と
N2を原料ガスとして成膜されるSi−Ｎ膜１０の
膜厚は100〜800Å程度で充分である。このSi−Ｎ
膜１０上には成膜速度のより速いSiH4とNH3を
原料ガスとしつてSi−Ｎ膜１１を重畳させる。Si
−Ｎ膜１０とSi−Ｎ膜１１の切換は同じプラズマ
CVD装置を用いてガス組成を変更するのみで可
能である。 Here, for the Si-N film serving as the upper dielectric layer, the Si-N film 10 on the side in contact with the light emitting layer 5 is made of SiH 4 (silane).
The film is formed by plasma CVD using a mixed gas of N 2 (nitrogen). In the plasma CVD method using a mixed gas of SiH 4 and NH 3 as the raw material gas, the hydrogen source in the raw material gas is only SiH 4 , so the amount of hydrogen radicals generated in the plasma is small, and the amount of hydrogen radicals generated in the plasma is small.
Damage to the surface of the ZnS light-emitting layer 5, such as that seen with -NH 3 -based source gas, is suppressed. Therefore, the luminance characteristics of the light emitting layer 5 are maintained high. Also, SiH 4 −
Si by plasma CVD method using N2 - based raw material gas
It was confirmed that the -N film 10 also had good coverage and few film defects and was excellent as a moisture-resistant protective film. The film formation rate is also about 200 to 300 Å/min, which is faster than the film formation rate of the puttering method. However, N2
The bond energy of NH 3 is higher than that of NH 3 , and N 2 is more difficult to dissociate than NH 3 , so there is a limit to the rate of Si—N film formation. Therefore, in this example, the Si-N film 1 is formed by plasma CVD using a mixed gas of SiH 4 and N 2 .
0 to a thickness of about 100 to 800 Å, and SiH 4
and NH 3 at a deposition rate of 300 to 600
A two-layer structure with a thickness of approximately 1,500 to 3,000 Å is created by laminating Si-N films 11 using plasma CVD at a rate of approximately Å/min.
An upper dielectric layer consisting of Si--N films 10 and 11 is formed. The important factors in luminance characteristics are the luminescent layer 5 and Si.
- This is the interface state between the N film 10 and therefore SiH 4 and
The thickness of the Si--N film 10 formed using N2 as a raw material gas is sufficient to be about 100 to 800 Å. This Si-N
A Si-N film 11 is superimposed on the film 10 using SiH 4 and NH 3 , which have faster film formation rates, as source gases. Si
-N film 10 and Si-N film 11 are switched using the same plasma.
This is possible by simply changing the gas composition using a CVD device.
上記方法によつて成膜された２層構造Si−Ｎ膜
１０，１１から成る上部誘電体層は膜欠陥が少な
い。この上にAl2O3等の金属酸化膜を重畳させる
必要がなく、直接Al等の背面電極８をパターン
形成することができる。背面電極８はAl等の金
属膜を成膜した後、透明電極２と直交する方向に
帯状形成され、透明電極２とともにマトリツクス
電極構造を構成する。背面電極８と透明電極２は
交流電源９に接続されて発光層５に交流電界を印
加し、この交流電界の印加に応答して発光層５よ
りEL発光が生起される。 The upper dielectric layer consisting of the two-layer structure Si--N films 10 and 11 formed by the above method has few film defects. There is no need to superimpose a metal oxide film such as Al 2 O 3 on this, and the back electrode 8 made of Al or the like can be directly patterned. The back electrode 8 is formed into a strip shape in a direction perpendicular to the transparent electrode 2 after forming a metal film such as Al, and forms a matrix electrode structure together with the transparent electrode 2. The back electrode 8 and the transparent electrode 2 are connected to an AC power source 9 to apply an AC electric field to the light emitting layer 5, and in response to the application of the AC electric field, the light emitting layer 5 generates EL light.
第３図は薄膜発光素子の印加電圧対発光輝度特
性を示す特性図である。図中の破線ａはSiH4−
NH3系原料ガスを用いてプラズマCVD法で上部
誘電体層のSi−Ｎ膜が成膜された従来の薄膜発光
素子の特性曲線である。実線ｂはSiH4−N2系原
料ガスを用いてプラズマCVD法でSi−Ｎ膜１０
を成膜した後、これな重畳してSiN4−NH3系原
料ガスを用いてプラズマCVD法でSi−Ｎ膜１１
が成膜した上記実施例に対応する薄膜発光素子の
特性曲線である。上部誘電体層以外の素子作製条
件は全て同一である。また薄膜発光素子の駆動条
件は交流電界100Hz、40μの対称パルス駆動とし
た。上記実施例により作製された薄膜発光素子は
従来のSiH4−NH3系原料ガスを用いてプラズマ
ーCVD法によりSi−Ｎ膜を単層成膜した薄膜発
光素子孔べて輝特性の点ではるかに優れている。 FIG. 3 is a characteristic diagram showing applied voltage versus luminance luminance characteristics of a thin film light emitting device. The broken line a in the figure is SiH 4 −
This is a characteristic curve of a conventional thin film light emitting device in which a Si--N film as an upper dielectric layer is formed by plasma CVD using NH 3 -based raw material gas. The solid line b shows the Si-N film 10 formed by plasma CVD using SiH 4 -N 2 source gas.
After forming the Si-N film 11, the Si-N film 11 is superimposed using a plasma CVD method using SiN 4 -NH 3 -based raw material gas.
2 is a characteristic curve of a thin film light emitting device corresponding to the above example in which a film was formed. All device manufacturing conditions other than the upper dielectric layer are the same. The driving conditions for the thin film light emitting device were an AC electric field of 100 Hz and a 40μ symmetrical pulse drive. The thin-film light-emitting device fabricated in the above example has far superior brightness characteristics compared to the conventional thin-film light-emitting device in which a single layer of Si-N film is deposited by the plasma-CVD method using SiH 4 -NH 3 -based raw material gas. Excellent.
尚、上記実施例において、プラズマCVD法に
よるSi−Ｎ膜の成膜中にN2Oを導入して上部誘電
体層Si−Ｏ−Ｎ（シリコンオキシナイトライド）
膜に置き換かえても同様の効果を得ることができ
る。プラズマCVD法の条件としては、Si−Ｎ膜
１０，１１双方とも基板温度100〜300℃、ガス圧
0.2torrとし、SiH4−NH3系では必要に応じてキ
ヤリアガスとしてN2又はArを導入する。 In the above embodiment, N 2 O was introduced during the formation of the Si-N film by plasma CVD to form the upper dielectric layer Si-O-N (silicon oxynitride).
A similar effect can be obtained by replacing it with a membrane. The conditions for the plasma CVD method include a substrate temperature of 100 to 300°C and a gas pressure for both Si-N films 10 and 11.
0.2 torr, and in the SiH 4 -NH 3 system, N 2 or Ar is introduced as a carrier gas as necessary.
＜発明の効果＞
以上詳設した如く、本発明によれば発光層に対
するカバレージが良好な誘電体層を有し耐湿性の
顕著なかつ発光輝度特性の高い薄膜発光素子を作
製することができる。また、成膜速度も向上する
ため量産に適し、安価な薄膜発光素子が得られ
る。<Effects of the Invention> As detailed above, according to the present invention, it is possible to produce a thin film light-emitting element having a dielectric layer with good coverage of the light-emitting layer, excellent moisture resistance, and high luminance characteristics. Furthermore, since the film formation rate is improved, an inexpensive thin film light emitting device suitable for mass production can be obtained.
第１図は本発明の１実施例の説明に供する薄膜
発光素子の基本的構造を示す構成図である。第２
図は従来は薄膜発光素子の構造を示す構成図であ
る。第３図は薄膜発光素子の印加電圧対発光輝度
特性を示す特性図である。
１……ガラス基板、２……透明電極、３……
SiO2膜、４……Si−Ｎ膜、５……発光層、１０，
１１……Si−Ｎ膜、８……背面電極、９……交流
電源。
FIG. 1 is a block diagram showing the basic structure of a thin film light emitting device for explaining one embodiment of the present invention. Second
The figure is a block diagram showing the structure of a conventional thin film light emitting device. FIG. 3 is a characteristic diagram showing applied voltage versus luminance luminance characteristics of a thin film light emitting device. 1...Glass substrate, 2...Transparent electrode, 3...
SiO 2 film, 4... Si-N film, 5... Light emitting layer, 10,
11... Si-N film, 8... Back electrode, 9... AC power supply.
Claims (1)
層と該発光層を被覆する誘電体層とを１対の電極
間に介設して成る薄膜発光素子の製造方法におい
て、前記発光層を下地層としてシランと窒素の混
合ガスを原料にプラズマCVD法で第１のSi−Ｎ
膜を堆積し、該第１のSi−Ｎ膜に重畳してシラン
とアンモニアの混合ガスを原料にプラズマCVD
法で第２のSi−Ｎ膜を堆積し、該第１及び第２の
Si−Ｎ膜で前記誘電体層を構成したことを特徴と
する薄膜発光素子の製造方法。1. A method for manufacturing a thin film light emitting device comprising a light emitting layer that generates EL light emission in response to the application of an electric field and a dielectric layer covering the light emitting layer interposed between a pair of electrodes, in which the light emitting layer is placed below the light emitting layer. The first Si-N layer was formed using a plasma CVD method using a mixed gas of silane and nitrogen as the raw material.
A film is deposited, superimposed on the first Si-N film, and plasma CVD is performed using a mixed gas of silane and ammonia as a raw material.
A second Si-N film is deposited by a method, and the first and second
A method for manufacturing a thin film light emitting device, characterized in that the dielectric layer is made of a Si-N film.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60029052A JPS61188891A (en) | 1985-02-15 | 1985-02-15 | Manufacture of thin film light emitting element |
| US07/023,912 US4721631A (en) | 1985-02-14 | 1987-03-09 | Method of manufacturing thin-film electroluminescent display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60029052A JPS61188891A (en) | 1985-02-15 | 1985-02-15 | Manufacture of thin film light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61188891A JPS61188891A (en) | 1986-08-22 |
| JPH0355038B2 true JPH0355038B2 (en) | 1991-08-22 |
Family
ID=12265605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60029052A Granted JPS61188891A (en) | 1985-02-14 | 1985-02-15 | Manufacture of thin film light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61188891A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622495A (en) * | 1985-06-26 | 1987-01-08 | ホ−ヤ株式会社 | Manufacture of thin film el element |
| US5264714A (en) * | 1989-06-23 | 1993-11-23 | Sharp Kabushiki Kaisha | Thin-film electroluminescence device |
-
1985
- 1985-02-15 JP JP60029052A patent/JPS61188891A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61188891A (en) | 1986-08-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |