JPH0356761B2 - - Google Patents
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- Publication number
- JPH0356761B2 JPH0356761B2 JP15869488A JP15869488A JPH0356761B2 JP H0356761 B2 JPH0356761 B2 JP H0356761B2 JP 15869488 A JP15869488 A JP 15869488A JP 15869488 A JP15869488 A JP 15869488A JP H0356761 B2 JPH0356761 B2 JP H0356761B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- amount
- reached
- predetermined
- detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002425 crystallisation Methods 0.000 claims description 55
- 239000013078 crystal Substances 0.000 claims description 45
- 239000007788 liquid Substances 0.000 claims description 35
- 239000002994 raw material Substances 0.000 claims description 25
- 238000000926 separation method Methods 0.000 claims description 21
- 238000006073 displacement reaction Methods 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000007791 liquid phase Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 description 30
- 239000000047 product Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 20
- 230000008569 process Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000012265 solid product Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000035900 sweating Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、圧力晶析方法に関し、詳細には、特
に結晶成長速度の小さい物質系の圧力晶析方法に
関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a pressure crystallization method, and more particularly to a pressure crystallization method for a material system with a low crystal growth rate.
(従来の技術)
圧力晶析法は、従来の蒸留法や冷却晶析法では
分離困難な原料系への適用に大きな可能性を有し
ている事、高純度の製品が得易い事、高収率が得
易い事、及び、エネルギ消費量が少ない事等か
ら、近年の化学工業のフアイン化に伴つて大きな
注目を集めている分離精製技術である。(Conventional technology) Pressure crystallization has great potential for application to raw material systems that are difficult to separate using conventional distillation or cooling crystallization, is easy to obtain high-purity products, and has high It is a separation and purification technology that has been attracting a lot of attention as the chemical industry has become more sophisticated in recent years because of its easy yield and low energy consumption.
かかる圧力晶析方法の概要は、例えば、科学工
学50巻(1986年)331頁「圧力晶析方法と装置の
概要」に記載されている。これを第1図(プロセ
スフロー及び装置の概念を示す図)によつて説明
すると、圧力容器1には、下方に蓋体(下蓋)2
が設けられ、ピストン5が油圧ユニツト3の作動
により容器1内にて上下動するように設けられて
おり、このピストン5と下蓋2とによつて圧力容
器1内に晶析室4が形成される。この晶析室4と
排液タンク6とは、減圧機構10及び弁11を介
して配管9により連結されている。又、晶析室4
と予備晶析缶7とは、原料供給ポンプ8、弁22
を介しては配管13により連結されている。 An overview of such a pressure crystallization method is described, for example, in "Summary of Pressure Crystallization Method and Apparatus", p. 331, Volume 50 of Kagaku Kogaku (1986). To explain this with reference to FIG. 1 (a diagram showing the process flow and the concept of the device), the pressure vessel 1 has a lid body (lower lid) 2 at the bottom.
A piston 5 is provided to move up and down within the container 1 by the operation of the hydraulic unit 3, and a crystallization chamber 4 is formed within the pressure container 1 by the piston 5 and the lower lid 2. be done. The crystallization chamber 4 and the drain tank 6 are connected by a pipe 9 via a pressure reducing mechanism 10 and a valve 11. Also, crystallization chamber 4
The pre-crystallizer 7 includes a raw material supply pump 8 and a valve 22.
They are connected via piping 13.
この装置において、原料は原料タンク14より
予備晶析缶7に送給され、ここで冷却されて圧力
晶析のための種結晶を生成する。これは種結晶を
含まないままの原料を圧力晶析にかけると、圧力
晶析では過飽和圧が一般的に数百気圧以上と比較
的高い場合が多く、初期結晶生成の為に高圧力が
必要となる恐れがあるためであり、種結晶を含ん
だスラリ状態で給液すると、かかる過飽和圧の心
配がないばかりか加圧により核発生を伴わずに結
晶の成長が期待出来る利点がある。 In this apparatus, raw materials are fed from a raw material tank 14 to a pre-crystallizer 7, where they are cooled to produce seed crystals for pressure crystallization. This is because when raw materials without seed crystals are subjected to pressure crystallization, the supersaturation pressure is generally relatively high, typically several hundred atmospheres or more, and high pressure is required for initial crystal formation. This is because there is a risk that the slurry containing seed crystals will be supplied, which has the advantage that not only is there no need to worry about such supersaturation pressure, but crystal growth can be expected without nucleation due to pressurization.
次に、配管13から弁12を介して原料を晶析
室4に注入する。晶析室4内に原料が充満する
と、ピストン先端部に開口を有するオーバーフロ
ー管15を通つて液流出が始まるので、これを検
知して弁12,16を閉じてピストン5による加
圧を開始する。原料液を加圧すると原料中の特定
物質の結晶化が進行して、晶析室4内は高圧下の
固液平衡状態となる。このとき生成する固体は一
般に極めて高純度の物質である。尚、固化の進行
に伴つて発生する固化潜熱により、晶析室4内の
温度は上昇するが、圧力晶析法では一般にこの温
度上昇防止の為の冷却は行わず、断熱的に加圧す
る方法が採用される。 Next, the raw material is injected into the crystallization chamber 4 from the pipe 13 via the valve 12. When the crystallization chamber 4 is filled with the raw material, the liquid begins to flow out through the overflow pipe 15 having an opening at the tip of the piston, so this is detected, the valves 12 and 16 are closed, and pressurization by the piston 5 is started. . When the raw material liquid is pressurized, crystallization of a specific substance in the raw material progresses, and the inside of the crystallization chamber 4 enters a solid-liquid equilibrium state under high pressure. The solid produced at this time is generally a substance of extremely high purity. Note that the temperature inside the crystallization chamber 4 rises due to the latent heat of solidification generated as solidification progresses, but in the pressure crystallization method, generally, cooling is not performed to prevent this temperature rise, but the pressure is applied adiabatically. will be adopted.
次に、所定の圧力まで昇圧すると、一般的には
直ちに昇析が完了し、所定の固液比率(飽和状
態)に達するので、この圧力を検知すると直ちに
弁11を開き、固液分離を開始する。そして、弁
11開の状態で、油圧ユニツト3からピストン5
に作用する圧力を保持したままピストンの下降を
続けると、晶析室4内の圧力は一定に保持された
状態で液相が昇析室4から排液タンク6に排出さ
れる。更にピストン5の下降を継続すると晶析室
4内の結晶粒群は加圧圧搾され、結晶粒間の残留
液体は所謂「絞り出し作用」を受けて排液タンク
6に排出される。 Next, when the pressure is increased to a predetermined pressure, the precipitation is generally completed immediately and a predetermined solid-liquid ratio (saturation state) is reached, so as soon as this pressure is detected, the valve 11 is opened and solid-liquid separation begins. do. Then, with the valve 11 open, the piston 5 is transferred from the hydraulic unit 3.
When the piston continues to descend while maintaining the pressure acting on the crystallization chamber 4, the liquid phase is discharged from the crystallization chamber 4 to the drain tank 6 while the pressure within the crystallization chamber 4 is maintained constant. Further, as the piston 5 continues to descend, the crystal grains in the crystallization chamber 4 are compressed and the remaining liquid between the crystal grains is discharged into the drain tank 6 through the so-called "squeezing action".
ピストン5の下降が更に続くと、結晶粒群は晶
析室4の形状に沿つて一個の大きな塊状固体製品
へと成形されていく。この様にして液体を固体か
ら略完全に分離する段階になると、大気圧下の排
液タンク6に連通している晶析室4内の液相圧力
は次第に低下していくため、結晶表面は部分的に
融解し、所謂「発汗洗浄」が行われ、塊状固体製
品の精製がなされる。 As the piston 5 continues to descend, the crystal grains are formed into one large lumpy solid product along the shape of the crystallization chamber 4. When the liquid is almost completely separated from the solid in this way, the liquid phase pressure in the crystallization chamber 4, which is connected to the drain tank 6 under atmospheric pressure, gradually decreases, so that the crystal surface Partial melting and so-called "sweating washing" takes place and purification of the bulk solid product takes place.
晶析室4から排出される排液の圧力が所定の圧
力にまで低下すると、ピストン5の下降を停止
し、同ピストンの上昇を開始すると共に高圧容器
1も上昇させると、固体製品は下蓋2上に載置さ
れた状態で容器1から取り出される。これを製品
取り出し装置(図示せず)によつて取り出し、高
圧容器1を下降させて下蓋2に装着し、以下原料
の注入工程に戻り、同様の工程を繰り返す事にな
る。尚、原料の注入に先立ち、前述のオーバーフ
ロー管15内の残液を、窒素ガス等の製品に対し
て不活性なガスでパージし、次工程の注入時の満
液検知の為の準備をしておく。 When the pressure of the liquid discharged from the crystallization chamber 4 drops to a predetermined pressure, the piston 5 stops descending, and at the same time the piston starts rising, the high-pressure container 1 also rises, and the solid product is removed from the bottom lid. 2 is taken out from the container 1. This is taken out by a product take-out device (not shown), the high-pressure container 1 is lowered and attached to the lower lid 2, and the process returns to the raw material injection process and the same process is repeated. Prior to the injection of raw materials, the residual liquid in the overflow pipe 15 described above is purged with a gas inert to the product, such as nitrogen gas, to prepare for full liquid detection during injection in the next process. I'll keep it.
以上の工程を繰り返すことによつて製品を連続
的に生産する。 By repeating the above steps, products are produced continuously.
(発明が解決しようとする課題)
ところが、従来の圧力晶析方法は、所期の製品
収率に比較し、実際得られる製品収率が低い場合
がある。この収率の改善を図るべく、種々検討し
たところ、この収率低下は結晶成長速度の小さい
物質系において特に顕著であることが判つた。そ
して、結晶成長速度か小さい程、収率低下が大き
い事が確認された。このように従来の圧力晶析方
法は、結晶成長速度の小さい物質系において製品
収率が低いという問題点がある。(Problems to be Solved by the Invention) However, in the conventional pressure crystallization method, the actually obtained product yield may be lower than the expected product yield. As a result of various studies aimed at improving this yield, it was found that this decrease in yield is particularly remarkable in material systems with low crystal growth rates. It was also confirmed that the lower the crystal growth rate, the greater the decrease in yield. As described above, the conventional pressure crystallization method has a problem in that the product yield is low in material systems with a low crystal growth rate.
本発明は、この様な事情に着目してなされたも
のであつて、その目的は結晶成長速度の小さい物
質系(原料)を圧力晶析するに当たり、その製品
収率の改善を図り得る圧力晶析方法を提供しよう
とするものである。 The present invention was made in view of these circumstances, and its purpose is to provide a pressure crystallizer that can improve the product yield when pressure crystallizing a material system (raw material) with a low crystal growth rate. The purpose of this study is to provide an analysis method.
(課題を解決するための手段)
上記課題を達成するために、本発明は次のよう
な構成の圧力晶析方法としている。即ち、第1請
求項の方法は、高圧容器内に液状又はスラリ状原
料を供給し、該容器内にて該原料を所定圧まで加
圧して晶析した後、加圧下で液相分を該容器外に
排出して固液分離し、晶析物質を得る圧力晶析方
法において、前記所定圧に到達した後該圧力に保
持し、該圧力保持状態で結晶生成量が所定量に達
したことを検知してから、前記固液分離を開始す
ることを特徴とする圧力晶析方法である。第2請
求項の方法は、高圧容器内温度が予め設定された
値に到達した事を検知する事により、前記結晶生
成量の所定量到達の検知を行う第1請求項に記載
の圧力晶析方法である。第3請求項の方法は、高
圧容器内への供給原料の温度と加圧後の高圧容器
内温度との差を検出して昇温量を求め、該昇温量
が予め設定された値に到達した事を検知する事に
より、前記結晶生成量の所定量到達の検知を行う
第1請求項に記載の圧力晶析方法である。第4請
求項の方法は、加圧用ピストンを有する高圧容器
を用い、加圧後のピストンの変移を検出し、該変
移が予め設定された値に到達した事を検知する事
により、前記結晶生成量の所定量到達の検知を行
う第1請求項に記載の圧力晶析方法である。第5
請求項の方法は、前記所定圧に到達した後のピス
トンの変移が予め設定された値に到達した事を検
知する事により、前記結晶生成量の所定量到達の
検知を行う第4請求項に記載の圧力晶析方法であ
る。また、第6請求項の方法は、前記所定圧に到
達した後、予め設定された一定時間該圧力に保持
し、次いで前記固液分離を開始することを特徴と
する第1請求項又は第3請求項に記載の圧力晶析
方法である。(Means for Solving the Problems) In order to achieve the above problems, the present invention provides a pressure crystallization method having the following configuration. That is, the method of the first claim supplies a liquid or slurry raw material into a high-pressure container, pressurizes the raw material to a predetermined pressure in the container to crystallize it, and then converts the liquid phase portion into the liquid under pressure. In a pressure crystallization method in which a crystallized substance is obtained by discharging the liquid out of the container and separating the solid and liquid, the predetermined pressure is maintained at the predetermined pressure, and the amount of crystal formation reaches the predetermined amount while the pressure is maintained. This pressure crystallization method is characterized in that the solid-liquid separation is started after detecting. The method according to the second claim is the pressure crystallization method according to the first claim, which detects that the amount of crystal formation has reached a predetermined amount by detecting that the temperature inside the high-pressure container has reached a preset value. It's a method. The method according to the third aspect detects the difference between the temperature of the raw material to be fed into the high-pressure container and the temperature inside the high-pressure container after pressurization to determine the amount of temperature increase, and the amount of temperature increase is adjusted to a preset value. The pressure crystallization method according to claim 1, wherein the arrival of the predetermined amount of crystal production is detected by detecting that the amount of crystal production has reached the predetermined amount. The method of claim 4 uses a high-pressure container having a pressurizing piston, detects the displacement of the piston after pressurization, and detects that the displacement reaches a preset value, thereby generating the crystals. The pressure crystallization method according to claim 1, wherein reaching a predetermined amount is detected. Fifth
The method according to claim 4 includes detecting that the amount of crystal formation has reached a predetermined amount by detecting that the displacement of the piston after reaching the predetermined pressure has reached a preset value. This is the pressure crystallization method described. Further, the method according to claim 6 is characterized in that after reaching the predetermined pressure, the pressure is maintained for a predetermined period of time, and then the solid-liquid separation is started. A pressure crystallization method according to the claims.
(作用および実施例)
結晶成長速度の小さい物質系において製品収率
が低い原因に関して検討した結果に基づき、以下
説明する。(Operations and Examples) Based on the results of an investigation into the causes of low product yields in material systems with low crystal growth rates, explanations will be given below.
第2図に、加圧後における時間(横軸:t)と
高圧容器内圧力及び温度(縦軸:P,T)との関
係を示す。この例は、所定圧力Peに達するまで
加圧した後、該圧力Peに保持し続けたときのも
のである。図中Pは圧力、Taは結晶成長速度の
大きい物質系Aの場合の温度、Tbは結晶成長速
度の小さい物質系Bの場合の温度を示している。 FIG. 2 shows the relationship between the time after pressurization (horizontal axis: t) and the internal pressure and temperature of the high-pressure container (vertical axis: P, T). In this example, the pressure is increased until it reaches a predetermined pressure Pe, and then the pressure Pe is maintained. In the figure, P indicates the pressure, Ta indicates the temperature in the case of material system A with a high crystal growth rate, and Tb indicates the temperature in the case of material system B with a low crystal growth rate.
この図から判る様に、圧力Pがt1秒後に所定圧
力Peに達すると、物質系Aの場合はぼほ同時に
昇温が終了し、温度Taが最高温度Teに達してい
る。ところが、物質系Bの場合は、所定圧力Pe
に達しても昇温の過渡期にあり、t2秒後に最高温
度Teに達する。 As can be seen from this figure, when the pressure P reaches the predetermined pressure Pe after t 1 second, in the case of the material system A, the temperature increase ends almost at the same time, and the temperature Ta reaches the maximum temperature Te. However, in the case of material system B, the predetermined pressure Pe
Even if it reaches t, it is still in the transition period of temperature increase and reaches the maximum temperature Te 2 seconds after t.
この晶温は、昇析の進行に伴つて発生する固化
潜熱によるものである。故に、物質系Bの場合
は、所定圧力Peに達しても、未だ晶析が進行中
である。従つて、所定圧力Pe到達後、すぐに固
液分離を開始すると晶析が未完了の状態で固液分
離されてしまうため製品収率が低くなる。これ
が、従来の圧力晶析方法において結晶成長速度の
小さい物質系の場合に製品収率が低くなる原因で
ある。 This crystal temperature is due to latent heat of solidification generated as precipitation progresses. Therefore, in the case of material system B, even if the predetermined pressure Pe is reached, crystallization is still in progress. Therefore, if solid-liquid separation is started immediately after the predetermined pressure Pe is reached, solid-liquid separation will occur before crystallization is completed, resulting in a low product yield. This is the reason why product yields are low in conventional pressure crystallization methods for material systems with low crystal growth rates.
即ち、従来の方法は、所定圧に到達すると直ち
に弁11を開き、液相分を該容器外に排出して固
液分離を開始するものである。故に、結晶成長速
度の大きい物質系の場合は、所定圧に達すると直
ちに晶析が完了するので、所定圧到達すぐに固液
分離が開始されても所期の製品収率が得られる。
しかし、結晶成長速度の小さい物質系の場合は所
定圧に達しても未だ晶析が完了していないので、
晶析未完了の状態で固液分離されてしまう。その
ために製品収率が低いものとなるのである。 That is, in the conventional method, as soon as a predetermined pressure is reached, the valve 11 is opened, the liquid phase is discharged out of the container, and solid-liquid separation is started. Therefore, in the case of a material system with a high crystal growth rate, crystallization is completed as soon as the predetermined pressure is reached, so even if solid-liquid separation is started immediately after the predetermined pressure is reached, the desired product yield can be obtained.
However, in the case of a material system with a low crystal growth rate, crystallization is not yet complete even when the predetermined pressure is reached.
Solid-liquid separation occurs before crystallization is completed. This results in a low product yield.
この製品収率を改善するには、所定圧力Peに
保持した状態で結晶生成量が所定量に達してから
固液分離を開始するようにすればよい。このとき
最高温度Teに達するt2秒後に、固液分離を開始
すると、最高の製品収率が得られる。 In order to improve this product yield, solid-liquid separation may be started after the amount of crystal formation reaches a predetermined amount while maintaining the pressure at a predetermined pressure Pe. At this time, if solid-liquid separation is started t 2 seconds after reaching the maximum temperature Te, the highest product yield can be obtained.
そこで、本発明に係る圧力晶析方法は、前に説
明したように、高圧容器内にて原料を所定圧に到
達した後該圧力に保持し、該圧力保持状態で結晶
生成量が所定量に達したことを検知してから、前
記固液分離を開始するようにしている。このよう
にすると、結晶成長速度の小さい物質系の場合で
も、製品収率を高いものにし得るのである。 Therefore, as explained above, in the pressure crystallization method according to the present invention, after the raw material reaches a predetermined pressure in a high-pressure container, it is maintained at that pressure, and while the pressure is maintained, the amount of crystal formation reaches a predetermined amount. After detecting that the solid-liquid separation has been reached, the solid-liquid separation is started. In this way, even in the case of a material system with a low crystal growth rate, a high product yield can be achieved.
上記結晶生成量が所定量に到達した事(以降、
所定量到達という)を検知する具体的方法に関し
て、以下に述べる。 The above crystal formation amount has reached the specified amount (hereinafter,
A specific method for detecting the arrival of a predetermined amount will be described below.
前記の如く、昇温は晶析の進行に伴つて発生す
る固化潜熱によるものであるので、温度と結晶生
成量とは密接な関係がある。従つて、予めこの関
係を求め、それに基づき所定の結晶生成量に対応
する温度を設定しておき、該設定値に到達した事
を検知すれば、所定量到達を検知できる。 As mentioned above, since the temperature increase is due to the latent heat of solidification generated as crystallization progresses, there is a close relationship between the temperature and the amount of crystal formation. Therefore, by determining this relationship in advance, setting a temperature corresponding to a predetermined amount of crystal formation based on it, and detecting that the set value has been reached, it is possible to detect that the predetermined amount has been reached.
ところで、温度と結晶生成量との関係は、晶析
開始温度、即ち原料供給温度によつて異なる。こ
の温度は、種々の要因により、時として1℃程度
の変動はあり得ると考えるべきである。従つて、
高圧容器内への供給原料の温度と加圧後の高圧容
器内温度との差を検出して昇温量を求め、該昇温
量が予め設定された値に到達した事を検知する事
により、所定量到達の検知を行う方がより望まし
い。尚、この昇温量は、第2図ではΔTで示され
るものである。 Incidentally, the relationship between temperature and the amount of crystal formation varies depending on the crystallization start temperature, that is, the raw material supply temperature. It should be considered that this temperature may sometimes fluctuate by about 1°C due to various factors. Therefore,
By detecting the difference between the temperature of the raw material fed into the high-pressure container and the temperature inside the high-pressure container after pressurization to determine the amount of temperature increase, and detecting that the amount of temperature increase has reached a preset value. , it is more desirable to detect when a predetermined amount has been reached. Note that this temperature increase amount is indicated by ΔT in FIG.
また、前記の如く、最高の製品収率を得るため
には、最高温度Teに達してから固液分離を開始
すればよいが、最高温度Teに達する迄に長時間
を要する様な場合には、1サイクル(原料供給か
ら製品取り出しまで)に要する時間が長くなり、
単位時間当たりの生産量が低下する。従つて、こ
の様な場合は、製品収率と生産量とのバランスを
考慮し、ある程度の温度或いは昇温量に達した時
点、例えば時間t3秒後の時点で固液分離を開始す
るのが好ましい。 In addition, as mentioned above, in order to obtain the highest product yield, it is sufficient to start solid-liquid separation after reaching the maximum temperature Te, but if it takes a long time to reach the maximum temperature Te, , the time required for one cycle (from raw material supply to product removal) becomes longer;
Production volume per unit time decreases. Therefore, in such a case, considering the balance between product yield and production amount, it is recommended to start solid-liquid separation when a certain temperature or amount of temperature increase is reached, for example, after time t 3 seconds. is preferred.
第3図に、加圧後における時間(横軸:t)と
高圧容器内圧力及びピストンの変移(縦軸:P,
L)との関係を示す。図中Pは圧力、Laは結晶
成長速度の大きい物質系Aの場合のピストン変
移、Lbは結晶成長速度の小さい物質系Bの場合
のピストン変移を示している。 Figure 3 shows the time after pressurization (horizontal axis: t), the pressure inside the high-pressure container, and the displacement of the piston (vertical axis: P,
shows the relationship with L). In the figure, P indicates the pressure, La indicates the piston displacement in the case of the material system A with a high crystal growth rate, and Lb indicates the piston displacement in the case of the material system B with the low crystal growth rate.
この図から判る様に、圧力Pがt1秒後に所定圧
力Peに達すると、物質系Aの場合のピストン変
移Laはぼほ同時に一定値Le(最高値)に到達す
る。ところが、物質系Bの場合は、所定圧力Pe
に達してもピストン変移の過渡期にあり、t2秒後
に一定値Leに達する。 As can be seen from this figure, when the pressure P reaches the predetermined pressure Pe after t 1 second, the piston displacement La in the case of the material system A reaches a constant value Le (maximum value) almost at the same time. However, in the case of material system B, the predetermined pressure Pe
Even if it reaches , it is still in the transition period of piston displacement, and reaches a constant value Le after t 2 seconds.
このピストン変移は、晶析に伴う体積減少によ
るものである。故に、物質系Bの場合は、所定圧
力Peに達しても、未だ晶析が進行中である。 This piston displacement is due to volume reduction accompanying crystallization. Therefore, in the case of material system B, even if the predetermined pressure Pe is reached, crystallization is still in progress.
上記のようにピストン変移と結晶生成量とは密
接な関係がある。従つて、予めこの関係を求め、
それに基づき所定の結晶生成量に対応するピスト
ン変移を設定しておき、該設定値に到達した事を
検知すれば、所定量到達を検知できる。 As mentioned above, there is a close relationship between the piston displacement and the amount of crystal formation. Therefore, find this relationship in advance,
Based on this, the piston displacement corresponding to a predetermined amount of crystal production is set, and by detecting that the set value has been reached, it is possible to detect that the predetermined amount has been reached.
ところで、ピストン変移と結晶生成量との関係
は、晶析開始時点のピストン位置によつて異な
る。このピストン位置は、種々の要因により異な
り、多少の変動はあり得ると考えるべきである。
従つて、所定圧に到達した後のピストンの変移が
予め設定された値に到達した事を検知する事によ
り、所定量到達の検知を行う方が望ましい。尚、
この変移は、第3図ではΔLで示すものである。 Incidentally, the relationship between the piston displacement and the amount of crystal formation differs depending on the piston position at the time of starting crystallization. This piston position varies depending on various factors and should be considered to be subject to some variation.
Therefore, it is preferable to detect that the predetermined amount has been reached by detecting that the displacement of the piston after reaching the predetermined pressure has reached a preset value. still,
This transition is indicated by ΔL in FIG.
また、最高の製品収率を得るためには、ピスト
ン変移が一定値Le、或いはLeに相当するΔLに到
達してから固液分離を開始すればよいが、これら
の値に達する迄に長時間を要する様な場合には、
単位時間当りの生産量が低下する。従つて、この
様な場合は、製品収率と生産量とのバランスを考
慮し、ある程度のピストン変移に達した時点、例
えば変位Lfに到達した時点で固液分離を開始す
るのが好ましい。 In addition, in order to obtain the highest product yield, solid-liquid separation should be started after the piston displacement reaches a constant value Le or ΔL corresponding to Le, but it takes a long time to reach these values. In cases where it is necessary,
Production volume per unit time decreases. Therefore, in such a case, considering the balance between product yield and production amount, it is preferable to start solid-liquid separation when the piston reaches a certain level of displacement, for example, when the displacement Lf is reached.
また、第2図、第3図から明らかなように、第
2図及び第3図の共通座標軸である時間tを管理
し、時間がt2又はt3に達した事を検出して固液分
離を開始することも可能である。 In addition, as is clear from Figures 2 and 3, the time t, which is the common coordinate axis in Figures 2 and 3, is managed, and when the time reaches t2 or t3 , the solid-liquid It is also possible to initiate a separation.
(発明の効果)
本発明に係る圧力晶析方法によれば、結晶成長
速度の小さい物質系(原料)を圧力晶析する際、
製品収率が改善され、所期の高い製品収率が得ら
れるようになる。(Effects of the Invention) According to the pressure crystallization method according to the present invention, when pressure crystallizing a material system (raw material) with a low crystal growth rate,
The product yield is improved and the desired high product yield can be obtained.
第1図は、圧力晶析方法に係るプロセスフロー
及び装置の概念を示す図、第2図は、加圧後にお
ける時間(横軸:t)と高圧容器内圧力及び温度
(縦軸:P,T)との関係を示す図、第3図は、
加圧後における時間(横軸:t)と高圧容器内圧
力及びピストンの変移(縦軸:P,L)との関係
を示す図である。
1……圧力容器、2……下蓋、3……油圧ユニ
ツト、4……晶析室、5……ピストン、6……排
液タンク、7……予備晶析缶、8……原料供給ポ
ンプ、9,13……配管、10……減圧機構、1
1,12,16……弁、14……原料タンク、1
5……オーバーフロー管。
Fig. 1 is a diagram showing the process flow and the concept of the apparatus related to the pressure crystallization method, and Fig. 2 shows the time after pressurization (horizontal axis: t) and the pressure and temperature inside the high-pressure vessel (vertical axis: P, Figure 3 is a diagram showing the relationship with T).
FIG. 3 is a diagram showing the relationship between time after pressurization (horizontal axis: t), pressure inside the high-pressure container, and displacement of the piston (vertical axis: P, L). 1...Pressure vessel, 2...Lower lid, 3...Hydraulic unit, 4...Crystallization chamber, 5...Piston, 6...Drainage tank, 7...Preliminary crystallizer, 8...Raw material supply Pump, 9, 13... Piping, 10... Pressure reduction mechanism, 1
1, 12, 16... Valve, 14... Raw material tank, 1
5...Overflow pipe.
Claims (1)
し、該容器内にて該原料を所定圧まで加圧して晶
析した後、加圧下で液相分を該容器外に排出して
固液分離し、晶析物質を得る圧力晶析方法におい
て、前記所定圧に到達した後該圧力に保持し、該
圧力保持状態で結晶生成量が所定量に達したこと
を検知してから、前記固液分離を開始することを
特徴とする圧力晶析方法。 2 高圧容器内温度が予め設定された値に到達し
た事を検知する事により、前記結晶生成量の所定
量到達の検知を行う第1請求項に記載の圧力晶析
方法。 3 高圧容器内への供給原料の温度と加圧後の高
圧容器内温度との差を検出して昇温量を求め、該
昇温量が予め設定された値に到達した事を検知す
る事により、前記結晶生成量の所定量到達の検知
を行う第1請求項に記載の圧力晶析方法。 4 加圧用ピストンを有する高圧容器を用い、加
圧後のピストンの変移を検出し、該変移が予め設
定された値に到達した事を検知する事により、前
記結晶生成量の所定量到達の検知を行う第1請求
項に記載の圧力晶析方法。 5 前記所定圧に到達した後のピストンの変移が
予め設定された値に到達した事を検知する事によ
り、前記結晶生成量の所定量到達の検知を行う第
4請求項に記載の圧力晶析方法。 6 前記所定圧に到達した後、予め設定された一
定時間該圧力に保持し、次いで前記固液分離を開
始することを特徴とする第1請求項又は第3請求
項に記載の圧力晶析方法。[Claims] 1. Supplying a liquid or slurry raw material into a high-pressure container, pressurizing the raw material to a predetermined pressure in the container to crystallize it, and then expelling the liquid phase from the container under pressure. In a pressure crystallization method in which a crystallized substance is obtained by discharging and separating solid and liquid, the pressure is maintained after reaching the predetermined pressure, and it is detected that the amount of crystal formation has reached a predetermined amount while the pressure is maintained. A pressure crystallization method characterized in that the solid-liquid separation is started after the solid-liquid separation is performed. 2. The pressure crystallization method according to claim 1, wherein reaching a predetermined amount of crystal formation is detected by detecting that the temperature inside the high-pressure container has reached a preset value. 3. Detecting the difference between the temperature of the raw material fed into the high-pressure container and the temperature inside the high-pressure container after pressurization to determine the amount of temperature increase, and detecting that the amount of temperature increase has reached a preset value. 2. The pressure crystallization method according to claim 1, wherein said method detects whether said crystal production amount reaches a predetermined amount. 4 Using a high-pressure container having a pressurizing piston, detecting the displacement of the piston after pressurization, and detecting that the displacement has reached a preset value, thereby detecting that the amount of crystal formation has reached a predetermined amount. The pressure crystallization method according to claim 1, which comprises: 5. The pressure crystallizer according to claim 4, wherein reaching the predetermined amount of crystal formation is detected by detecting that the displacement of the piston after reaching the predetermined pressure has reached a preset value. Method. 6. The pressure crystallization method according to claim 1 or 3, wherein after reaching the predetermined pressure, the pressure is maintained for a predetermined period of time, and then the solid-liquid separation is started. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15869488A JPH026801A (en) | 1988-06-27 | 1988-06-27 | Pressure crystallization method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15869488A JPH026801A (en) | 1988-06-27 | 1988-06-27 | Pressure crystallization method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH026801A JPH026801A (en) | 1990-01-11 |
| JPH0356761B2 true JPH0356761B2 (en) | 1991-08-29 |
Family
ID=15677314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15869488A Granted JPH026801A (en) | 1988-06-27 | 1988-06-27 | Pressure crystallization method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH026801A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2788817B1 (en) * | 1999-01-26 | 2001-04-06 | Mannesmann Rexroth Sa | HYDRAULIC DISTRIBUTOR |
-
1988
- 1988-06-27 JP JP15869488A patent/JPH026801A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH026801A (en) | 1990-01-11 |
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