Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0357630B2 - - Google Patents
[go: Go Back, main page]

JPH0357630B2 - - Google Patents

Info

Publication number
JPH0357630B2
JPH0357630B2 JP1871284A JP1871284A JPH0357630B2 JP H0357630 B2 JPH0357630 B2 JP H0357630B2 JP 1871284 A JP1871284 A JP 1871284A JP 1871284 A JP1871284 A JP 1871284A JP H0357630 B2 JPH0357630 B2 JP H0357630B2
Authority
JP
Japan
Prior art keywords
circuit
output
led
transistor
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1871284A
Other languages
Japanese (ja)
Other versions
JPS60163472A (en
Inventor
Masaharu Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP59018712A priority Critical patent/JPS60163472A/en
Publication of JPS60163472A publication Critical patent/JPS60163472A/en
Publication of JPH0357630B2 publication Critical patent/JPH0357630B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/30Driver circuits
    • H05B45/395Linear regulators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Landscapes

  • Dot-Matrix Printers And Others (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Led Devices (AREA)

Description

【発明の詳細な説明】 本発明はLED駆動回路に関し、特に、温度変
化にかかわらず一定の輝度を得ることができるよ
うにしたLED駆動回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an LED drive circuit, and particularly to an LED drive circuit that can obtain constant brightness regardless of temperature changes.

例えば、LEDプリンタの如く、多数のLEDを
選択的に駆動して印字を行なうため、種々の
LED駆動回路が用いられてきているが、従来用
いられていたこの種のLED駆動回路においては、
温度変化によつてMOS出力トランジスタのON
抵抗が大きくなると共にLED自体の温度特性の
ために、温度の上昇に従つてLEDの輝度が低下
するという問題点を有していた。また、MOSト
ランジスタを駆動するロジツク回路の出力レベル
が電源電圧の変動に伴つて変化すると、これによ
つてもMOS出力トランジスタのON抵抗が変化
し、LEDの輝度を変化させるという問題点も有
していた。
For example, in LED printers, a large number of LEDs are selectively driven to print, so various types of
LED drive circuits have been used, but in this type of LED drive circuit that has been used conventionally,
MOS output transistor turns on due to temperature change
In addition to the increased resistance, there was a problem in that the brightness of the LED decreased as the temperature increased due to the temperature characteristics of the LED itself. Another problem is that when the output level of the logic circuit that drives the MOS transistor changes as the power supply voltage fluctuates, this also changes the ON resistance of the MOS output transistor and changes the brightness of the LED. was.

第1図には、従来のこの種の代表的な回路例が
ブロツク図にて示されている。
FIG. 1 shows a block diagram of a typical conventional circuit example of this type.

第1図において符号1で示されるのは、MOS
構造のロジツク回路であり、このロジツク回路1
の出力はMOS出力トランジスタ2のソースSに
LED駆動用電圧Eが供給され、そのドレインD
には抵抗器Rを介してLED素子3が接続されて
いる。
In Fig. 1, the number 1 indicates the MOS
This is a logic circuit with a structure, and this logic circuit 1
The output of is connected to the source S of MOS output transistor 2.
LED driving voltage E is supplied, and its drain D
The LED element 3 is connected to via a resistor R.

このような従来の構成においては、MOS出力
トランジスタ2のオン抵抗が温度上昇に伴つて大
きくなると、LED素子に流れる電流が減少し、
且つ、LED素子3の発光効率が温度上昇に伴つ
て低下するので、LED素子3から出力される光
の強さが温度上昇に伴つて低下することになる。
また、ロジツク回路1に供給されている電源電圧
Vccが低下すると、MOS出力トランジスタ2の
ゲート・ソース間に印加するバイアス電圧が小さ
くなり、これによりMOS出力トランジスタ2の
オン抵抗が大きくなり、LED素子の輝度が低下
する要因となつている。
In such a conventional configuration, when the on-resistance of the MOS output transistor 2 increases as the temperature rises, the current flowing through the LED element decreases.
Moreover, since the luminous efficiency of the LED element 3 decreases as the temperature rises, the intensity of light output from the LED element 3 decreases as the temperature increases.
In addition, the power supply voltage supplied to the logic circuit 1
When Vcc decreases, the bias voltage applied between the gate and source of the MOS output transistor 2 decreases, which increases the on-resistance of the MOS output transistor 2, which causes a decrease in the brightness of the LED element.

従つて、このような構成のLED駆動回路を用
いて、例えば、LEDプリンタを構成した場合、
温度変化及び電源電圧の変動により輝度にバラツ
キを生じ、一定濃度のプリントを行なうことが不
可能となり、印字濃度にバラツキを生じるという
不都合を生じることになる。
Therefore, for example, when an LED printer is configured using an LED drive circuit with such a configuration,
Fluctuations in brightness occur due to changes in temperature and fluctuations in power supply voltage, making it impossible to print at a constant density, resulting in the inconvenience of variations in print density.

本発明の目的は、従つて、従来技術の上述の欠
点を除去するための極めて効果的な手段を提供す
ることにある。
The object of the invention is therefore to provide highly effective means for obviating the above-mentioned drawbacks of the prior art.

本発明の構成は、LEDに流れる駆動電流の制
御を行なう出力トランジスタと、該出力トランジ
スタのオン、オフ制御を行なう制御信号を出力す
るロジツク回路とを備えたLED駆動回路におい
て、定電圧発生回路と、前記制御信号に応答して
前記定電圧発生回路からの定電圧出力を前記トラ
ンジスタのゲート・ソース間にバイアス電圧とし
て印加するアナログスイツチ手段とを備えた点に
特徴を有する。
The configuration of the present invention includes an LED drive circuit that includes an output transistor that controls the drive current flowing through the LED, and a logic circuit that outputs a control signal that controls on/off of the output transistor. and analog switch means for applying a constant voltage output from the constant voltage generating circuit as a bias voltage between the gate and source of the transistor in response to the control signal.

以下、図示の実施例により本発明を詳細に説明
する。
Hereinafter, the present invention will be explained in detail with reference to illustrated embodiments.

第2図は、本発明によるLED駆動回路の一実
施例を示すブロツク図であり、LED駆動回路1
0は、ICチツプ12内に設けられたMOS構造の
ロジツク回路11と、該ロジツク回路11からの
出力信号Sに応答して作動するアナログスイツチ
14とを備えている。アナログスイツチ14に
は、定電圧回路13からの定電圧出力Ecが印加
されており、出力信号Sが「H」レベルとなるこ
とに応答してアナログスイツチ14が開き、定電
圧出力EcがMOS出力トランジスタ17のゲー
ト・ソース間に印加される。
FIG. 2 is a block diagram showing an embodiment of the LED driving circuit according to the present invention.
0 includes a MOS-structured logic circuit 11 provided within an IC chip 12 and an analog switch 14 that operates in response to an output signal S from the logic circuit 11. The constant voltage output Ec from the constant voltage circuit 13 is applied to the analog switch 14, and in response to the output signal S becoming "H" level, the analog switch 14 opens and the constant voltage output Ec becomes the MOS output. It is applied between the gate and source of transistor 17.

MOS出力トランジスタ17は、そのソースが
電源20に接続されていると共に、そのドレイン
回路にLED素子19が接続されており、従つて
定電圧出力Ecがそのゲート・ソース間に印加さ
れると、MOS出力トランジスタ17はオンとな
り、LED素子19に駆動電流が流れることにな
る。
The MOS output transistor 17 has its source connected to the power supply 20 and the LED element 19 connected to its drain circuit. Therefore, when a constant voltage output Ec is applied between its gate and source, the MOS output transistor 17 The output transistor 17 is turned on, and a drive current flows through the LED element 19.

第3図には、定電圧回路13の具体例が示され
ている。
FIG. 3 shows a specific example of the constant voltage circuit 13.

定電圧回路13は、コンハンスメント型及びデ
イプレツシヨン型の一対のPチヤンネルMOSト
ランジスタT1,T2が図示の如く接続され、これ
らのトランジスタT1,T2は、抵抗器R1を介して
電源20の出力とアースとの間に接続されてい
る。ここで、トランジスタT1のドレインと、ト
ランジスタT2のソースが互いに接続され、この
接続点Pは、各トランジスタT1,T2のゲートに
接続されている、これにより、P点と電源ライン
との間には所定の基準電圧VREFが発生するように
なつている。
In the constant voltage circuit 13, a pair of enhancement type and depletion type P channel MOS transistors T 1 and T 2 are connected as shown in the figure, and these transistors T 1 and T 2 are connected to a power supply via a resistor R 1 . It is connected between the output of 20 and ground. Here, the drain of the transistor T 1 and the source of the transistor T 2 are connected to each other, and this connection point P is connected to the gate of each transistor T 1 and T 2. This makes the connection between the point P and the power supply line. A predetermined reference voltage V REF is generated between the two.

接続点Pは比較回路22の一入力端子に接続さ
れ、その+入力端子には、電源ライン21側に接
続された一対の分圧抵抗器R2,R3の接続点Qに
接続され抵抗器R3の一端は、MOSトランジスタ
T3のドレインに接続されている。MOSトランジ
スタT3のゲートGには比較回路22の出力が接
続されており、MOSトランジスタT3のソースは
接地されている。
The connection point P is connected to one input terminal of the comparison circuit 22, and its + input terminal is connected to the connection point Q of a pair of voltage dividing resistors R 2 and R 3 connected to the power supply line 21 side. One end of R3 is a MOS transistor
Connected to the drain of T3 . The output of the comparison circuit 22 is connected to the gate G of the MOS transistor T3 , and the source of the MOS transistor T3 is grounded.

電源ライン21とMOSトランジスタT3のドレ
インとの間に生じる出力電圧VREGが、出力電圧
Ecとして出力される。
The output voltage V REG generated between the power supply line 21 and the drain of the MOS transistor T 3 is the output voltage
Output as Ec.

このような構成によると、PチヤンネルMOS
トランジスタT1,T2の各しきい値Vthは、温度
上昇につれて正方向に変化するため、抵抗器R1
を流れる電流が増大し、VREFの値が大きくなる。
この結果、比較回路22の−入力端子の電位が温
度上昇によつて低下し、VREGのレベルが低下する
ことになる。
According to such a configuration, P channel MOS
Each threshold value Vth of transistors T 1 and T 2 changes in the positive direction as the temperature rises, so the resistor R 1
The current flowing through increases, and the value of V REF increases.
As a result, the potential of the - input terminal of the comparator circuit 22 decreases due to the temperature rise, and the level of V REG decreases.

このため、出力電圧Ecのは温度上昇により、
レベルが増大し、MOS出力トランジスタ17の
ゲートバイアス電圧は大きくなり、より大きな駆
動電流でLED素子19を駆動することができる。
Therefore, the output voltage Ec decreases due to temperature rise.
As the level increases, the gate bias voltage of the MOS output transistor 17 becomes larger, and the LED element 19 can be driven with a larger drive current.

温度上昇により増大する駆動電流の大きさは、
温度上昇により低下するLED素子19の発光効
率を補償する大きさに定められており、従つて、
温度変化が生じても、LED素子19の輝度は一
定に保たれる。
The magnitude of the drive current that increases due to temperature rise is
The size is determined to compensate for the luminous efficiency of the LED element 19 that decreases due to temperature rise, and therefore,
Even if a temperature change occurs, the brightness of the LED element 19 is kept constant.

第4図には、MOS出力トランジスタ17の特
性を示す特性曲線が示されている。第4図は、
LED素子19にかかる電圧Voutを横軸にとり、
MOS出力トランジスタ17に流れるソース電流
Iを縦軸にとつてある。第4図から判るように、
Voutの値が所定範囲内にあると、電源電圧VDD
値によらずほぼ一定の駆動電流が供給され、その
駆動電流の大きさは、MOS出力トランジスタ1
7のゲート・ソース間に与えられる電圧により定
まる。ところで、この電圧は、上述のように、温
度変化があつたときに生じるLED素子19の発
光効率の変化を補償する分ぢけ変動するように定
められているので、結局、LED素子19の輝度
は、温度変化によつても変動しないし、電源20
の出力電圧VDDの変化によつても影響を受けず、
常に一定の輝度を保つことができる。
FIG. 4 shows a characteristic curve representing the characteristics of the MOS output transistor 17. Figure 4 shows
Taking the voltage Vout applied to the LED element 19 on the horizontal axis,
The source current I flowing through the MOS output transistor 17 is plotted on the vertical axis. As can be seen from Figure 4,
When the value of Vout is within a predetermined range, a nearly constant drive current is supplied regardless of the value of the power supply voltage V DD , and the magnitude of the drive current is determined by the MOS output transistor 1.
It is determined by the voltage applied between the gate and source of 7. By the way, as mentioned above, this voltage is set to fluctuate to compensate for the change in luminous efficiency of the LED element 19 that occurs when the temperature changes, so that the brightness of the LED element 19 will eventually change. does not change due to temperature changes, and the power supply 20
It is unaffected by changes in the output voltage V DD of
A constant brightness can always be maintained.

本発明によれば、上述の如く、電源の出力電圧
及び周囲温度の変化があつても、LED素子の輝
度を一定に保つことができるので、LEDプリン
タ等の印字品質を著しく向上させることができる
優れた効果を奏する。
According to the present invention, as described above, the brightness of the LED element can be kept constant even when the output voltage of the power supply and the ambient temperature change, so the printing quality of LED printers etc. can be significantly improved. It has excellent effects.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のLED駆動回路の構成を示す回
路図、第2図は本発明によるLED駆動回路の一
実施例を示す回路図、第3図は第2図に示した定
電圧回路の具体例を示す回路図、第4図は第2図
に示した回路の作動を説明するための特性曲線図
である。 10……LED駆動回路、11……ロジツク回
路、12……ICチツプ、13……定電圧回路、
14……アナログスイツチ、17……MOS出力
トランジスタ、19……LED素子。
Fig. 1 is a circuit diagram showing the configuration of a conventional LED drive circuit, Fig. 2 is a circuit diagram showing an embodiment of the LED drive circuit according to the present invention, and Fig. 3 is a specific example of the constant voltage circuit shown in Fig. 2. A circuit diagram showing an example, FIG. 4 is a characteristic curve diagram for explaining the operation of the circuit shown in FIG. 2. 10... LED drive circuit, 11... logic circuit, 12... IC chip, 13... constant voltage circuit,
14...Analog switch, 17...MOS output transistor, 19...LED element.

Claims (1)

【特許請求の範囲】[Claims] 1 LEDに流れる駆動電流の制御を行なう出力
トランジスタと、該出力トランジスタのオン、オ
フ制御を行なう制御信号を出力するロジツク回路
とを備えたLED駆動回路において、定電圧発生
回路と、前記制御信号に応答して前記定電圧発生
回路からの定電圧出力を前記トランジスタのゲー
ト・ソース間にバイアス電圧として印加するアナ
ログスイツチ手段とを備えたLED駆動回路。
1. In an LED drive circuit that includes an output transistor that controls the drive current flowing through the LED, and a logic circuit that outputs a control signal that controls on/off of the output transistor, a constant voltage generation circuit and a an analog switch means for responsively applying a constant voltage output from the constant voltage generating circuit as a bias voltage between the gate and source of the transistor.
JP59018712A 1984-02-03 1984-02-03 Led drive circuit Granted JPS60163472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59018712A JPS60163472A (en) 1984-02-03 1984-02-03 Led drive circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59018712A JPS60163472A (en) 1984-02-03 1984-02-03 Led drive circuit

Publications (2)

Publication Number Publication Date
JPS60163472A JPS60163472A (en) 1985-08-26
JPH0357630B2 true JPH0357630B2 (en) 1991-09-02

Family

ID=11979262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59018712A Granted JPS60163472A (en) 1984-02-03 1984-02-03 Led drive circuit

Country Status (1)

Country Link
JP (1) JPS60163472A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62241395A (en) * 1986-04-11 1987-10-22 株式会社 エス・エム・シ− Maltilayer interconnection board

Also Published As

Publication number Publication date
JPS60163472A (en) 1985-08-26

Similar Documents

Publication Publication Date Title
US4160934A (en) Current control circuit for light emitting diode
KR100472719B1 (en) Overcurrent protection circuit for voltage regulator
US6400349B1 (en) Driving circuit and LED head with constant turn-on time
US5252910A (en) Current mirror operating under low voltage
JPH0679262B2 (en) Reference voltage circuit
US4476428A (en) Power supply device
JPH0576792B2 (en)
US5387830A (en) Semiconductor device with excess current prevention circuit
US7202647B2 (en) Power supply circuit
JP4017850B2 (en) Power circuit
US5166702A (en) LED printhead with improved current mirror driver and driver chip therefor
JP6798218B2 (en) Output stage buffer circuit
JPH0357630B2 (en)
JPH08288830A (en) Integrated buffer circuit
JP3408193B2 (en) LED drive circuit
JP2516236B2 (en) Drive circuit
US6104176A (en) Voltage regulator and method of voltage regulation
JP2948446B2 (en) Integrated circuit device for driving element and light emitting device
JP2647208B2 (en) Class A push-pull output circuit
KR100745936B1 (en) Internal voltage generation circuit
JP3126574B2 (en) Light emitting element driving circuit and device using the same
KR910005831Y1 (en) Driving circuit for controlling led current
JPH05122838A (en) Current limiting circuit
JP2514220B2 (en) Drive circuit
JP2546371B2 (en) Differential logic circuit

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term