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JPH0359009B2 - - Google Patents
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JPH0359009B2 - - Google Patents

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Publication number
JPH0359009B2
JPH0359009B2 JP1701287A JP1701287A JPH0359009B2 JP H0359009 B2 JPH0359009 B2 JP H0359009B2 JP 1701287 A JP1701287 A JP 1701287A JP 1701287 A JP1701287 A JP 1701287A JP H0359009 B2 JPH0359009 B2 JP H0359009B2
Authority
JP
Japan
Prior art keywords
compound
oxide
decomposes
heated
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1701287A
Other languages
Japanese (ja)
Other versions
JPS63185823A (en
Inventor
Noboru Kimizuka
Naohiko Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Original Assignee
KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO filed Critical KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Priority to JP1701287A priority Critical patent/JPS63185823A/en
Publication of JPS63185823A publication Critical patent/JPS63185823A/en
Publication of JPH0359009B2 publication Critical patent/JPH0359009B2/ja
Granted legal-status Critical Current

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  • Compounds Of Iron (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

産業上の利用分野 本発明は磁性材料、半導体材料および触媒材料
として有用な新規化合物であるInFeZnMgO5で示
される六方晶系の層状構造を有する化合物および
その製造法に関する。 従来技術 従来、(Yb3+Fe3+O3oFe2+O(nは整数を示す)
で示される六方晶系の層状構造を有する化合物は
本出願人によつて合成され知られている。 YbFe2O4,Yb2Fe3O7,Yb3Fe4O10及び
Yb4Fe5O13の六方晶系としての格子定数、ybO1.5
層、FeO1.5層、Fe2O2.5層の単位格子内における
層数を示すと表−1の通りである。 これらの化合物は酸化鉄(FeO)1モルに対し
て、YbFeO3がnモルの割合で化合していると考
えられる層状構造を持つ化合物である。
INDUSTRIAL APPLICATION FIELD The present invention relates to a compound having a hexagonal layered structure represented by InFeZnMgO 5 , which is a new compound useful as a magnetic material, a semiconductor material, and a catalyst material, and a method for producing the same. Conventional technology Conventionally, (Yb 3+ Fe 3+ O 3 ) o Fe 2+ O (n indicates an integer)
The compound having a hexagonal layered structure represented by is synthesized by the applicant and is known. YbFe 2 O 4 , Yb 2 Fe 3 O 7 , Yb 3 Fe 4 O 10 and
Lattice constant of Yb 4 Fe 5 O 13 as hexagonal system, ybO 1.5
Table 1 shows the number of layers in the unit cell, FeO 1.5 layer, and Fe 2 O 2.5 layer. These compounds have a layered structure in which n moles of YbFeO 3 are combined with 1 mole of iron oxide (FeO).

【表】【table】

【表】 発明の目的 本発明は(YbFeO3oFeOの化学式において、 n=1/2に相当し、Yb3+の代わりにIn3+を、
Fe2+の代わりに(Zn2++Mg2+)を置きかえて得
られる新規な化合物を提供するにある。 発明の構成 本発明のInFeZnMgO5で示される化合物は、イ
オン結晶モデルではIn3+(Fe3+Zn2+)Mg2+O5 2-
記載され、その構造はInO1.5層、(Fe,Zn)O2.5
層およびMgO層の積層によつて形成されており、
著しい構造異方性を持つことがその特徴の一つで
ある。Zn2+はFe3+と共に(Fe3+,Zn2+)O2.5層を
作り、Mg2+はMgO層を作つている。六方晶系と
しての格子定数は次の通りである。 a=3.324±0.001(Å) c=22.32±0.01(Å) この化合物の面指数(hkl)、面間隔(d0(Å))
(d0は実測値、dcは計算値を示す)およびX線に
対する相対反射強度〔I(%)〕を示すと表−2の
通りである。 この化合物は磁性材料、半導体材料および触媒
材料などとして有用である。
[Table] Purpose of the invention The present invention is based on the chemical formula of (YbFeO 3 ) o FeO, where n = 1/2, and In 3+ instead of Yb 3+ ,
The object of the present invention is to provide a novel compound obtained by replacing Fe 2+ with (Zn 2+ +Mg 2+ ). Structure of the Invention The compound represented by InFeZnMgO 5 of the present invention is described as In 3+ (Fe 3+ Zn 2+ )Mg 2+ O 5 2- in the ionic crystal model, and its structure consists of 1.5 layers of InO, (Fe, Zn) O2.5
It is formed by laminating layers and MgO layers,
One of its characteristics is that it has significant structural anisotropy. Zn 2+ forms the (Fe 3+ , Zn 2+ )O 2.5 layer together with Fe 3+, and Mg 2+ forms the MgO layer. The lattice constants as a hexagonal crystal system are as follows. a=3.324±0.001 (Å) c=22.32±0.01 (Å) Planar index (hkl), plane spacing (d 0 (Å)) of this compound
(d 0 is the measured value, d c is the calculated value) and the relative reflection intensity [I (%)] for X-rays is shown in Table 2. This compound is useful as a magnetic material, a semiconductor material, a catalytic material, and the like.

【表】【table】

【表】【table】

【表】 この化合物は次の方法によつて製造し得られ
る。 金属インジウムあるいは酸化インジウムもしく
は加熱により酸化インジウムに分解される化合物
と、金属鉄あるいは酸化鉄もしくは加熱により酸
化鉄に分解される化合物と、金属亜鉛あるいは酸
化亜鉛もしくは加熱により酸化亜鉛に分解される
化合物と、金属マグネシウムあるいは酸化マグネ
シウムもしくは加熱により酸化マグネシウムに分
解する化合物とを、In,Fe,Zn及びMgを原子比
で1対1対1対1の割合で混合し、該混合物を
600℃以上で大気中、酸化性雰囲気中あるいはIn
およびFeが各々3価状態、MgおよびZnが各々2
価状態より還元されない還元雰囲気中で加熱する
ことによつて製造することができる。 本発明に用いる出発物質は市販のものをそのま
ま使用できるが、化学反応を速やかに進行させる
ためには、粒径が小さいほどよく、特に10μm以
下であることが好ましい。また、磁性材料、半導
体材料として用いる場合には、不純物の混入をき
らうので、純度の高いものであることが好まし
い。これらをそのままあるいはアルコール類、ア
セトンなどと共に十分に混合する。 これらの混合割合は、In,Fe,MgおよびZnの
割合が原子比で、1対1対1対1の割合である。
この割合をはずすと目的とする化合物の単一相を
得ることができない。この混合物を大気中、酸化
性雰囲気中あるいはInおよびFeが各々3価状態、
MgおよびZnが各々2価状態から還元されない還
元性雰囲気中で、600℃以上で加熱する。加熱時
間は数時間もしくはそれ以上である。加熱の際の
昇温速度に制約はない。加熱終了後急冷するか、
あるいは大気中に急激に引き出せばよい。 得られたInFeZnMgO5化合物の粉末は褐色であ
り、粉末X線回折法によつて結晶構造を有するこ
とが分かつた。その結晶構造は層状構造で、
InO1.5層,(Fe3+Zn2+)O2.5層およびMgO層の積
み重ねによつて形成されている。 実施例 純度99.99%以上の酸化インジウム粉末、純度
99.9%以上の酸化鉄粉末、試薬特級の酸化マグネ
シウム粉末および試薬特級の酸化亜鉛粉末を、モ
ル比で1対1対2対2の割合に秤量し、乳鉢内で
エタノールを加えて約30分間混合し、平均粒径数
μmの微粉状混合物を得た。該混合物を白金管内
に封入し、1300℃に設定された管状シリコニツト
炉内に入れ、3日間加熱した後、試料を炉外に取
り出し室温までに急速に冷却した。 得られた試料は、InFeZnMgO5単一相であり、
粉末X線回折法によつて、各反射の面間隔(dp
および相対反射強度を測定した。その結果は表−
2の通りであつた。 六方晶系としての格子定数は次の通りであつ
た。 a=3.324±0.001(Å) c=22.32±0.01(Å) この格子定数および表−2の各反射(hkl)よ
り算出した面間隔〔dc(Å)〕は、実測の面間隔
〔dc(Å)〕とよく一致していた。 発明の効果 本発明は磁性材料、半導体材料及び触媒として
有用な新規化合物を提供する。
[Table] This compound can be produced by the following method. Metallic indium or indium oxide or a compound that decomposes into indium oxide when heated; Metallic iron or iron oxide or a compound that decomposes into iron oxide when heated; Metallic zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. , metallic magnesium, magnesium oxide, or a compound that decomposes into magnesium oxide by heating, and In, Fe, Zn, and Mg in an atomic ratio of 1:1:1:1, and the mixture is
In air, oxidizing atmosphere or In
and Fe are each in the trivalent state, and Mg and Zn are each in the 2-valent state.
It can be produced by heating in a reducing atmosphere that does not reduce the valence state. Commercially available starting materials used in the present invention can be used as they are, but in order to allow the chemical reaction to proceed rapidly, the smaller the particle size, the better, particularly preferably 10 μm or less. Further, when used as a magnetic material or a semiconductor material, it is preferable to use a material with high purity to avoid contamination with impurities. These are thoroughly mixed as is or with alcohol, acetone, etc. These mixing ratios are 1:1:1:1 in atomic ratio of In, Fe, Mg, and Zn.
If this ratio is exceeded, a single phase of the target compound cannot be obtained. This mixture is stored in the air, in an oxidizing atmosphere, or in a state where In and Fe are each in a trivalent state.
Heating is performed at 600° C. or higher in a reducing atmosphere in which Mg and Zn are not reduced from their divalent state. Heating time is several hours or more. There are no restrictions on the rate of temperature increase during heating. After heating, cool it down quickly or
Alternatively, it can be rapidly drawn out into the atmosphere. The obtained InFeZnMgO 5 compound powder was brown in color and was found to have a crystalline structure by powder X-ray diffraction. Its crystal structure is layered,
It is formed by stacking 1.5 layers of InO, 2.5 layers of (Fe 3+ Zn 2+ )O, and MgO layers. Example: Indium oxide powder with a purity of 99.99% or higher, purity
Weigh out 99.9% or more iron oxide powder, reagent grade magnesium oxide powder, and reagent grade zinc oxide powder in a molar ratio of 1:1:2:2, add ethanol in a mortar, and mix for about 30 minutes. A fine powder mixture with an average particle size of several μm was obtained. The mixture was sealed in a platinum tube, placed in a tubular siliconite furnace set at 1300°C, and heated for 3 days, after which the sample was taken out of the furnace and rapidly cooled to room temperature. The obtained sample is InFeZnMgO 5 single phase,
By powder X-ray diffraction method, the interplanar spacing of each reflection (d p )
and the relative reflection intensity was measured. The results are shown in the table-
2 was true. The lattice constants as a hexagonal crystal system were as follows. a=3.324±0.001 (Å) c=22.32±0.01 (Å) The interplanar spacing [d c (Å)] calculated from this lattice constant and each reflection (hkl) in Table 2 is the actually measured interplanar spacing [d c (Å)] was in good agreement. Effects of the Invention The present invention provides novel compounds useful as magnetic materials, semiconductor materials, and catalysts.

Claims (1)

【特許請求の範囲】 1 InFeZnMgO5で示される六方晶系の層状構造
を有する化合物。 2 金属インジウムあるいは酸化インジウムもし
くは加熱により酸化インジウムに分解される化合
物と、金属鉄あるいは酸化鉄もしくは加熱により
酸化鉄に分解される化合物と、金属亜鉛あるいは
酸化亜鉛もしくは加熱により酸化亜鉛に分解され
る化合物と、金属マグネシウム、あるいは酸化マ
グネシウムもしくは加熱により酸化マグネシウム
に分解する化合物とを、In,Fe,Zn及びMgを原
子比で1対1対1対1の割合で混合し、該混合物
を600℃以上で大気中、酸化性雰囲気中あるいは
In及びFeが各々3価状態、MgおよびZnが各々2
価状態より還元されない還元雰囲気中で加熱する
ことを特徴とするInFeZnMgO5で示される六方晶
系の層状構造を有する化合物の製造法。
[Claims] 1. A compound having a hexagonal layered structure represented by InFeZnMgO 5 . 2 Metallic indium or indium oxide or a compound that decomposes into indium oxide when heated; Metallic iron or iron oxide or a compound that decomposes into iron oxide when heated; Metallic zinc or zinc oxide or a compound that decomposes into zinc oxide when heated. and metallic magnesium, magnesium oxide, or a compound that decomposes into magnesium oxide upon heating, in an atomic ratio of In, Fe, Zn, and Mg of 1:1:1:1, and the mixture is heated at 600°C or higher. in air, oxidizing atmosphere or
In and Fe are each in trivalent state, Mg and Zn are each in 2 state
1. A method for producing a compound having a hexagonal layered structure represented by InFeZnMgO 5 , which comprises heating in a reducing atmosphere that does not reduce the valence state.
JP1701287A 1987-01-27 1987-01-27 Compound having hexagonal layered structure represented by InFeZnMgO↓5 and method for producing the same Granted JPS63185823A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1701287A JPS63185823A (en) 1987-01-27 1987-01-27 Compound having hexagonal layered structure represented by InFeZnMgO↓5 and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1701287A JPS63185823A (en) 1987-01-27 1987-01-27 Compound having hexagonal layered structure represented by InFeZnMgO↓5 and method for producing the same

Publications (2)

Publication Number Publication Date
JPS63185823A JPS63185823A (en) 1988-08-01
JPH0359009B2 true JPH0359009B2 (en) 1991-09-09

Family

ID=11932086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1701287A Granted JPS63185823A (en) 1987-01-27 1987-01-27 Compound having hexagonal layered structure represented by InFeZnMgO↓5 and method for producing the same

Country Status (1)

Country Link
JP (1) JPS63185823A (en)

Also Published As

Publication number Publication date
JPS63185823A (en) 1988-08-01

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