JPH0360162B2 - - Google Patents
Info
- Publication number
- JPH0360162B2 JPH0360162B2 JP23703283A JP23703283A JPH0360162B2 JP H0360162 B2 JPH0360162 B2 JP H0360162B2 JP 23703283 A JP23703283 A JP 23703283A JP 23703283 A JP23703283 A JP 23703283A JP H0360162 B2 JPH0360162 B2 JP H0360162B2
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- heat
- insulation
- resistor element
- shield case
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009413 insulation Methods 0.000 claims description 16
- 239000000945 filler Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 16
- 230000007935 neutral effect Effects 0.000 description 12
- 239000000835 fiber Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000005338 heat storage Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 238000009434 installation Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011959 amorphous silica alumina Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Details Of Resistors (AREA)
Description
【発明の詳細な説明】
本発明は変圧器巻線の中性点を抵抗器を介して
接地する電力用の中性点接地抵抗装置に使用され
る封入形抵抗器に関するもので、その目的は封入
形抵抗器の小型化およびコストダウンを図ること
にある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an enclosed resistor used in a power neutral point grounding resistance device that grounds the neutral point of a transformer winding via a resistor. The objective is to reduce the size and cost of sealed resistors.
一般に送電系統においては、一線地絡時の異、
常電圧抑制および地絡継電器の要素の検出、ある
いは通信線への誘導障害防止のために中性点接地
方式が広く採用されており、例えば第１図に示す
ように、中性点接地抵抗装置１（以下抵抗装置と
いう）が、送電系統の中継点となる変電所内にお
いて変圧器２の中性点プツシング２ａに接続接地
されている。そして、上記抵抗装置１はケース３
内に抵抗素体ａをグリツド状に配置して形成した
複数の抵抗器４からなり、その装置は、絶縁碍子
５を介して保護柵６内に必要台数据付け設置され
ている。しかし、上記各抵抗器４は気中絶縁方式
を採用しているため比較的大型化し、又、その据
付けは横一列となつて設置されるので、大きな据
付面積を必要としていた。一方、最近ではガス絶
縁機器にみられる如く、変電機器は六フツ化イオ
ウガス（以下SF6ガスという）を絶縁材として使
用して小型、軽量化を進めており、抵抗装置１に
おいても同様である。例えば第２図に示すよう
に、SF6ガスＧを詰めた密閉容器７内に抵抗素体
ａを収納したり、第３図のように、抵抗素体ａ間
に無機質な板状の絶縁スペーサ８を介して設けた
抵抗素体ａを、SF6ガスＧを詰めた密閉容器７に
収容するようにしたものがある。そして、上記各
抵抗素体ａは密閉容器７内にそれぞれ多段に積層
されている。然るに、前者は抵抗素体ａに電流が
供給されると、抵抗素体ａは抵抗電流分又は電力
量に応じた熱がそのまま熱方散されるため、抵抗
素体ａや密閉容器７は耐熱性に優れたものを使用
する必要があつた。又、SF6ガスＧは抵抗素体ａ
の熱による分解されてフツ化水素ガス等の分解ガ
スが発生して密閉容器７内に蓄積されるため、抵
抗素体ａの温度を上げることは困難であつた。こ
の欠点は抵抗器４自体を大きくしてその通電容量
を大きくすれば解消するが、これでは抵抗器４が
大型化し不経済であつた。又、後者は各抵抗素体
ａ間に絶縁スペーサ８を介在させて、抵抗素体ａ
に電流が流れた場合に生ずる電磁機械力により抵
抗素体ａ同士が接触することによつて、抵抗値が
変わり抵抗器４自体の正常な働きが阻害されるの
を防止せしめているので、抵抗器４は、グリツド
状に配置した抵抗素体ａ同士の間隔を小さくする
ことによつて小形化を図つている（尚、前者は抵
抗素体ａ自体の間隔を大きくしてあるので、上記
電磁機械力による弊害は生じにくい）反面、抵抗
器４の組立に当つては、多段に積層された各層の
抵抗素体ａのそれぞれの間隙に絶縁スペーサ８を
個々に詰めて製作しなければならないので、非常
に手間と労力がかかり面倒であつた。又、抵抗素
体ａはこれに流れる電流によつて発熱し、その熱
によつて前者と同様に、密閉容器７内に充填され
たSF6ガスＧの分解ガスが発生し、この分解ガス
によつて絶縁スペーサ８を劣化損傷させて抵抗器
４の機能を低下させたり、その寿命を短縮させる
虞れがあつた。 In general, in power transmission systems, there are
Neutral point grounding systems are widely used to suppress normal voltage, detect elements of ground fault relays, or prevent inductive disturbances to communication lines. For example, as shown in Figure 1, neutral point grounding resistors are used 1 (hereinafter referred to as a resistance device) is connected and grounded to a neutral point pushing 2a of a transformer 2 in a substation that is a relay point of a power transmission system. The above resistance device 1 is connected to the case 3.
The device is comprised of a plurality of resistors 4 formed by arranging resistive elements a in a grid pattern, and the required number of the devices are installed inside a protective fence 6 via insulators 5. However, since each of the resistors 4 adopts an air insulation method, they are relatively large in size, and since they are installed in a horizontal row, a large installation area is required. On the other hand, recently, as seen in gas-insulated equipment, substation equipment has been made smaller and lighter by using sulfur hexafluoride gas (hereinafter referred to as SF 6 gas) as an insulating material, and the same applies to resistance device 1. . For example, as shown in Fig. 2, a resistor element a is housed in a closed container 7 filled with SF 6 gas G, or as shown in Fig. 3, an inorganic plate-shaped insulating spacer is placed between the resistor elements a. There is one in which a resistor element a provided through a resistor element 8 is housed in a closed container 7 filled with SF 6 gas G. Each of the resistor elements a is stacked in multiple stages within the closed container 7. However, in the former case, when a current is supplied to the resistor element a, the heat corresponding to the resistance current or electric power is dissipated as it is, so the resistor element a and the sealed container 7 are heat resistant. It was necessary to use something with excellent properties. Also, SF 6 gas G is resistive element a
It has been difficult to raise the temperature of the resistor element a because it is decomposed by heat and decomposed gas such as hydrogen fluoride gas is generated and accumulated in the closed container 7. This drawback can be overcome by increasing the size of the resistor 4 itself to increase its current carrying capacity, but this increases the size of the resistor 4 and is uneconomical. In addition, in the latter case, an insulating spacer 8 is interposed between each resistor element a, and the resistor element a
This prevents the resistor elements a from coming into contact with each other due to the electromagnetic mechanical force generated when current flows through them, changing the resistance value and preventing the normal functioning of the resistor 4 itself. The device 4 is made smaller by reducing the spacing between the resistive elements a arranged in a grid pattern (in the former case, the spacing between the resistive elements a themselves is increased, so the electromagnetic On the other hand, when assembling the resistor 4, insulating spacers 8 must be individually filled into the gaps between the resistor elements a of each layer stacked in multiple stages. , which required a lot of time and effort and was troublesome. Furthermore, the resistor element a generates heat due to the current flowing through it, and as in the case of the former, the decomposition gas of the SF 6 gas G filled in the sealed container 7 is generated by the heat, and this decomposition gas is As a result, there was a risk that the insulating spacer 8 would be deteriorated and damaged, thereby reducing the function of the resistor 4 and shortening its lifespan.
本発明は上述の欠点を除去して、抵抗素体を蓄
熱と絶縁の機能を備えた断熱材料によつて包み込
むと共に、その外側を無機質の絶縁材により包囲
せしめてなる抵抗体を密閉されたシールドケース
内に内蔵させて、シールドケース内に分解ガスが
発生するのを防止するようにした小型で経済的な
製作を可能とした中性点接地抵抗装置用の封入形
抵抗器を得るようにしたもので、以下本発明の実
施例を第４図乃至第６図により説明すると、１１
は金属板を四角形状に成形加工した抵抗体収納用
のシールドケース（以下ケースという）で、１２
は上記ケース１１内に収納した抵抗体、抵抗体１
２は第５図に示すように、フエライト系特殊鋼等
からなる板体をグリツド状に配置してその接続端
を溶着して形成された抵抗素体１２ａと、この抵
抗素体１２ａの各段間に挿入された絶縁板１３
と、抵抗素体１２ａ並びに絶縁板１３を一体に包
み込む断熱層１４とによつて構成されている。そ
して、更に、上記抵抗体１２の構造を詳述する
と、抵抗素体１２ａは一層毎にグリツド状に形成
されたものを所要の抵抗値に応じて複数段に積層
連結されて設けられ、又、絶縁板１３は、多段状
に積層された上記抵抗素体１２ａの各段間を所要
の寸法で間隔を空けて抵抗素体１２ａが積層でき
るよう板体の上、下部に上記抵抗素体１２ａを受
け止めることができる突条１３ａを複数条突設さ
せた絶縁と蓄熱機能とを有する磁器製の絶縁板で
あり、更に、断熱層１４は例えば、耐熱性に優れ
た無機質のセラミツクフアイバーを充填・固化し
て構成されている。そして、上記抵抗体１２を製
作する場合は、先ず、肉厚な絶縁板１３の上にグ
リツト状に形成された一層分の抵抗素体１２ａ
を、突状１３ａを介して積載し、このあと、抵抗
素体１２ａの〓間から比較的流動性の少ない高粘
性で、かつ、耐熱性に優れた無機質のセラミツク
フアイバー（一般にシリカ、アルミナがほぼ１：
１の組成をもち、溶融繊維化法によつて製造され
る非晶質のシリカアルミナ系短繊維のことをセラ
ミツクフアイバーと呼び、使用時は水で混練し、
常温で水和硬化する。例えば、商品名・イソタツ
プ、イソライト工業株式会社製がこれに相当す
る。）からなる充填材を充填する。続いて、第２
層目は薄手の絶縁板１３を、その突条１３ａを介
して第１層目の抵抗素体１２ａ上に積載してか
ら、この第２層目の絶縁板１３上に、その突条１
３ａを介して第１層目と同様に抵抗素体１２ａを
積載し、このあと、前記同様、抵抗素体１２ａの
隙間から充填材を充填する。このように、絶縁板
１３と抵抗素体１２ａとを交互に所要段積み重ね
ながら、各層の抵抗素体１２ａの隙間にそれぞれ
充填材を充填する。尚、抵抗素体１２ａの間に充
填材を充填する際、各抵抗素体１２ａの周囲をア
ルミシート等で包囲するか、あるいは金型の中で
絶縁板１３と抵抗素体１２ａとの組立てを行ない
ながら充填材を抵抗素体１２ａ間に充填するよう
にして、充填材が抵抗素体１２ａと絶縁板１３と
の間から漏出しないようにしてもよい。抵抗素体
１２ａと絶縁板１３とを交互に所要段数組立てた
後、これを図示しない加熱炉に入れて抵抗素体１
２ａ間に充填した充填材を加熱固化せしめて、第
６図に示すように、各層の抵抗素体１２ａの間隙
と、各層の抵抗素体１２ａと絶縁板１３との間
に、それぞれ断熱層１４を形成して、抵抗素体１
２ａ自体と、この抵抗素体１２ａと絶縁板とを一
体的に固定せしめて抵抗体１２を形成する。この
あと、上記抵抗体１２を構成する各層の抵抗素体
１２ａ同志を導電性の接続板１６にて接続してか
ら、上記抵抗体１２をシールドケース１１内に収
納して、図示しないボルト又は接着剤等の固定手
段により固定する。つづいて、シールドケース１
１内の空間部に、絶縁と蓄熱の機能を備えたアル
ミナ粉からなる無機質の絶縁材１７を充填して、
上記シールドケース１１を蓋体１１ａにて密封せ
しめて抵抗器１８を構成するものである。１９は
抵抗器１８の上、下部に、既存のパイプにて形成
されたシールドリング、２０は上記抵抗器１８を
所要段数積み重ねて収容するタンクで、各抵抗器
１８は第４図のように、絶縁碍子２１を介してタ
ンク２０内に積み重ね固定される。２２は各抵抗
器１８間を相互に接続する接続導体で、タンク２
０内片側の最上段の抵抗器１８はタンク２０上部
の碍子２３に接続導体２２ａを介して接続され、
片側最下段の抵抗器１８はタンク側壁の碍子２４
に接続体２２ｂを介して接続される。そして、抵
抗器１８を段積みしたタンク２０内にSF6ガスＧ
を所要圧力で充填せしめて、電力用の中性点接地
抵抗装置１５を構成する。この抵抗装置１５は変
圧器２５の中性点ブツシング２５ａにケーブル２
６にて接続されて、変電所内に設置される。図
中、２７はアース線である。 The present invention eliminates the above-mentioned drawbacks, and provides a hermetically sealed shield in which the resistor element is wrapped in a heat insulating material having heat storage and insulation functions, and the outside of the resistor element is surrounded by an inorganic insulating material. To obtain an enclosed type resistor for a neutral point grounding resistor device, which is built in the case to prevent decomposition gas from being generated in the shield case and can be manufactured compactly and economically. Embodiments of the present invention will be described below with reference to FIGS. 4 to 6.
is a shield case (hereinafter referred to as the case) for storing resistors made of a metal plate formed into a rectangular shape.
is a resistor housed in the case 11, and resistor 1
2, as shown in FIG. 5, there is a resistor element 12a formed by arranging plate bodies made of ferrite special steel or the like in a grid shape and welding the connecting ends thereof, and each stage of this resistor element 12a. Insulating plate 13 inserted between
and a heat insulating layer 14 that integrally surrounds the resistive element body 12a and the insulating plate 13. Further, to describe the structure of the resistor 12 in detail, the resistor element 12a is provided by layer by layer formed in a grid shape and stacked and connected in multiple stages according to the required resistance value. The insulating plate 13 has the resistive elements 12a on the top and bottom of the plate so that the resistive elements 12a can be stacked with a required dimension between each stage of the resistive elements 12a stacked in multiple stages. It is a porcelain insulating plate having insulation and heat storage functions with a plurality of protruding ridges 13a protruding from the plate, and the heat insulating layer 14 is, for example, filled with and solidified with inorganic ceramic fiber having excellent heat resistance. It is configured as follows. When manufacturing the resistor 12, first, one layer of the resistor element 12a is formed in a grit shape on the thick insulating plate 13.
is loaded through the protrusion 13a, and then an inorganic ceramic fiber (generally made of silica or alumina) which has relatively low fluidity, high viscosity, and excellent heat resistance is loaded between the edges of the resistor element 12a. 1:
Amorphous silica-alumina short fibers having the composition 1 and produced by the melt fiberization method are called ceramic fibers, and when used, they are kneaded with water.
Cures by hydration at room temperature. For example, the product name IsoTap, manufactured by Isolite Kogyo Co., Ltd., corresponds to this. ) is filled with a filling material consisting of: Next, the second
The thin insulating plate 13 is stacked on the first layer resistor element 12a via its protrusions 13a, and then the protrusions 1 are placed on the second layer insulating plate 13.
Similarly to the first layer, the resistor elements 12a are stacked through the resistor elements 3a, and then the filler is filled from the gaps between the resistor elements 12a in the same manner as described above. In this way, the insulating plates 13 and the resistive elements 12a are alternately stacked in the required stages, and the gaps between the resistive elements 12a in each layer are filled with the filler. When filling the space between the resistor elements 12a with the filler, it is necessary to surround each resistor element 12a with an aluminum sheet or the like, or to assemble the insulating plate 13 and the resistor element 12a in a mold. The filler may be filled between the resistor elements 12a during the process to prevent the filler from leaking from between the resistor elements 12a and the insulating plate 13. After assembling the required number of resistor elements 12a and insulating plates 13 alternately, they are placed in a heating furnace (not shown) and the resistor elements 1
The filler filled between the spaces 2a and 2a is heated and solidified, and as shown in FIG. and resistor element 1
2a itself, this resistor element body 12a, and an insulating plate are integrally fixed to form the resistor element 12. After that, the resistor elements 12a of each layer constituting the resistor 12 are connected to each other using a conductive connection plate 16, and then the resistor 12 is housed in the shield case 11, and then the resistor element 12 is placed in the shield case 11 using bolts or adhesives (not shown). Fix by fixing means such as agent. Next, shield case 1
The space inside 1 is filled with an inorganic insulating material 17 made of alumina powder that has insulation and heat storage functions.
The resistor 18 is constructed by sealing the shield case 11 with a lid 11a. 19 is a shield ring formed of existing pipes above and below the resistor 18; 20 is a tank that accommodates the resistors 18 stacked in a required number of stages; each resistor 18 is arranged as shown in FIG. They are stacked and fixed in the tank 20 via the insulator 21. 22 is a connecting conductor that connects each resistor 18 with the tank 2.
The uppermost resistor 18 on one side of the tank 20 is connected to the insulator 23 at the top of the tank 20 via a connecting conductor 22a.
The lowest resistor 18 on one side is the insulator 24 on the side wall of the tank.
is connected to via the connecting body 22b. Then, SF 6 gas G is placed in the tank 20 in which the resistors 18 are stacked.
The neutral point grounding resistance device 15 for electric power is constructed by filling it with a required pressure. This resistor device 15 connects the cable 2 to the neutral bushing 25a of the transformer 25.
6 and installed within the substation. In the figure, 27 is a ground wire.
次に、動作について説明すると、今、接続端子
２２を通つて抵抗器１８に電流が供給されると、
抵抗素体１２ａはその抵抗電流分又は電力量に応
じた熱を生ずる。この熱は、一旦上記抵抗素体１
２ａを包囲する断熱層１４に蓄熱されてから、こ
の断熱層１４を介して時間的な遅れを生じせしめ
ながら徐々に絶縁材１７を介して伝達され、シー
ルドケース１１の表面からタンク２０内にSF6ガ
スＧを熱分解させることのない温度で熱放散され
る。そして、上記抵抗素体１２ａから生ずる熱の
大部分は、抵抗素体１２ａを包囲する断熱層１４
により蓄熱されてしまうため、シールドケース１
１内は、抵抗素体１２ａの温度上昇によつて内圧
が大きくなるということはない。この点につい
て、縮少モデルによつて本発明の抵抗器１８の熱
モデル試験を行つたところ、抵抗素体１２ａは断
熱層１４により包囲されている関係上、通電停止
後の温度降下は断熱層１４を具備していないもの
に比べてその降下は著しく遅れる。これは抵抗素
体１２ａが断熱層１４に包囲されているためで、
抵抗素体１２ａ周辺は高温となるが、抵抗素体１
２ａから遠ざかるにつれて温度は次第に低くなる
ことが判明した。これは、上述したように、抵抗
素体１２ａの熱は断熱層１４に大部分が蓄熱され
てしまうために生ずる現象と考えられ、この結
果、抵抗体１２の表面はその内部に比べてさほど
高温とはならず、従つて、シールドケース１１内
は局部的な高温地帯が一部に存在するものの、全
体的には温度上昇がほとんどみられないため、シ
ールドケース１１内の圧力が上昇することはな
い。しかも、断熱層１４に蓄熱されさ抵抗素体１
２ａからの熱は、時間の経過と共に、徐々に絶縁
材１７を介してシールドケース１１の表面から熱
放散され、その上、この熱はシールドケース１１
の周辺においては、抵抗素体１２ａに通電されて
いないときとほとんど同じあるため、シールドケ
ース１１から放散される熱によつてタンク２０内
に充填したSF6ガスＧが熱分解されることもな
い。又、抵抗素体１２ａはその通電時、大きな電
磁機械力を受けるが、本発明は、断熱層１４内に
抵抗素体１２ａが埋設されているため、抵抗素体
１２ａが電磁機械力によつて損傷を受け、抵抗器
１８の機能を低下させるようなことはない。更
に、抵抗器１８はその尖鋭な突出部にシールドリ
ング１９が取付けてあり、旦つ、抵抗器１８はシ
ールドケース１１により製せられていることとあ
わせて、上記抵抗器１８の尖鋭な突出部によつて
生ずる通電時における不平等電界を補償して、こ
の部位の電界分布を著しく緩和させることができ
るので、タンク２０内のSF6ガスＧを劣化、汚損
させることがないから、雷サージ侵入時の絶縁強
度を上昇させることができる。 Next, to explain the operation, when current is supplied to the resistor 18 through the connection terminal 22,
The resistor element 12a generates heat according to its resistance current or electric power. This heat is once transferred to the resistor element 1.
After the heat is stored in the heat insulating layer 14 surrounding the shield case 11, the heat is gradually transmitted through the insulating material 17 with a time delay through the heat insulating layer 14, and SF flows from the surface of the shield case 11 into the tank 20. 6 Heat is dissipated at a temperature that does not cause gas G to undergo thermal decomposition. Most of the heat generated from the resistor element 12a is transferred to the heat insulating layer 12 surrounding the resistor element 12a.
Shield case 1
1, the internal pressure does not increase due to a rise in the temperature of the resistor element 12a. Regarding this point, when we conducted a thermal model test of the resistor 18 of the present invention using a reduced model, it was found that since the resistor element body 12a is surrounded by the heat insulating layer 14, the temperature drop after energization is stopped is caused by the heat insulating layer 14. Its descent is significantly slower than those without 14. This is because the resistor element 12a is surrounded by the heat insulating layer 14.
Although the area around the resistor element 12a becomes high temperature, the resistor element 1
It was found that the temperature becomes progressively lower as one moves away from 2a. As mentioned above, this phenomenon is thought to occur because most of the heat in the resistor element 12a is stored in the heat insulating layer 14, and as a result, the surface of the resistor element 12 is at a much higher temperature than the inside. Therefore, although there are some local high-temperature zones inside the shield case 11, there is almost no temperature rise overall, so the pressure inside the shield case 11 will not increase. do not have. Moreover, the heat is stored in the heat insulating layer 14 and the resistance element 1
The heat from the shield case 2a is gradually dissipated from the surface of the shield case 11 via the insulating material 17 over time, and in addition, this heat is dissipated from the surface of the shield case 11
Since the area around the resistor element 12a is almost the same as when the resistor element 12a is not energized, the SF 6 gas G filled in the tank 20 is not thermally decomposed by the heat dissipated from the shield case 11. . Furthermore, the resistive element 12a is subjected to a large electromagnetic mechanical force when energized, but in the present invention, since the resistive element 12a is embedded within the heat insulating layer 14, the resistive element 12a is not affected by the electromagnetic mechanical force. It will not be damaged and will not degrade the functionality of the resistor 18. Furthermore, a shield ring 19 is attached to the sharp protrusion of the resistor 18, and in addition to the fact that the resistor 18 is made of the shield case 11, It is possible to compensate for the unequal electric field that occurs during energization, and to significantly alleviate the electric field distribution in this area, so that the SF 6 gas G in the tank 20 will not deteriorate or become contaminated, thereby preventing lightning surges from entering. It is possible to increase the insulation strength at the time of use.
尚、本発明は各層の抵抗素体１２ａ間に介在さ
れる絶縁板１３は、突条１３ａを設けた例につい
て説明したが、本発明はこれに限定することな
く、突条１３のない絶縁板を用いて抵抗体１２を
構成するようにしても本発明は成立するものであ
る。 In the present invention, an example has been described in which the insulating plate 13 interposed between the resistor elements 12a of each layer is provided with the protrusions 13a, but the present invention is not limited to this, and the insulating plate without the protrusions 13 The present invention can also be achieved even if the resistor 12 is constructed using the following.
本発明は上述のように、グリツド状に配置され
て複数段に積層された抵抗素体の各段間に、絶縁
と蓄熱機能を備えた絶縁板を介して、この絶縁板
と上記抵抗素体とを、絶縁と断熱機能を備えた高
粘性で耐熱性に優れた無機質のセラミツクフアイ
バーからなる充填材によつて抵抗素体を包囲した
状態で一体的に固定せしめて絶縁板と抵抗素体と
のなす空間部に断熱層を形成して抵抗体を構成
し、この抵抗体をシールドケース内に収納固定し
た後、シールドケース内にアルミナ粉からなる無
機質な絶縁材を密封せしめて、電力用の中性点接
地抵抗装置に使用する封入形抵抗器を得るように
したもので、本発明は上述のように構成されてい
るので次に示すような効果を奏する。 As described above, the present invention provides a structure in which an insulating plate having insulation and heat storage functions is interposed between each stage of resistive elements arranged in a grid pattern and stacked in multiple stages, and the insulating plate and the resistive element The insulating plate and the resistor element are fixed together with the resistor element surrounded by a filler made of inorganic ceramic fiber with high viscosity and excellent heat resistance that has insulation and heat insulation functions. A heat insulating layer is formed in the space formed by the resistor to form a resistor, and this resistor is housed and fixed in a shield case. Then, an inorganic insulating material made of alumina powder is sealed inside the shield case. The present invention is designed to obtain an encapsulated resistor for use in a neutral point grounding resistance device, and since the present invention is configured as described above, it produces the following effects.
(1) 各段の抵抗素体は、絶縁板を介在させた状態
で断熱層に包囲されて上記絶縁板と一体的に固
定されているので、抵抗素体への通電時に生ず
る電磁機械力によつて抵抗素体が絶縁板からず
れたり、他の抵抗素体と接触する等して抵抗器
の機能が損なわれることはない。(1) The resistor element of each stage is surrounded by a heat insulating layer with an insulating plate interposed between them and is fixed integrally with the insulating plate, so that it is not affected by the electromagnetic mechanical force generated when the resistor element is energized. Therefore, the function of the resistor is not impaired due to the resistance element being displaced from the insulating plate or coming into contact with other resistance elements.
(2) 又、本発明の抵抗器は抵抗素体が絶縁と蓄熱
機能を備えた断熱層内に埋設されているため、
抵抗素体が通電中に生ずる熱を上記断熱層に蓄
熱させることが可能であるので、抵抗素体を収
納したシールドケース周辺の温度が上昇するの
を阻止することができると共に、上記断熱層に
蓄熱された熱は、抵抗器自体が短時間使用で次
の使用までに相当のインターバルがあるので急
速に冷却させる必要がない故、シールドケース
は機械的強度および耐熱性を余り考慮すること
なく簡易にかつ経済的に設計、製作することが
できる。(2) In addition, in the resistor of the present invention, the resistor element is embedded in a heat insulating layer that has insulation and heat storage functions.
Since it is possible to store the heat generated when the resistor element is energized in the heat insulating layer, it is possible to prevent the temperature around the shield case housing the resistor element from increasing, and also to store the heat generated in the heat insulating layer in the heat insulating layer. The accumulated heat does not need to be cooled down quickly because the resistor itself is used for a short time and there is a considerable interval before the next use, so the shield case can be easily used without much consideration of mechanical strength and heat resistance. It can be designed and manufactured quickly and economically.
(3) 更に、抗体素体はグリツド状に形成させて抵
抗素体内に生ずる空隙内に、従来のように、絶
縁スペーサを個々に詰め込む必要は全くなく、
高粘性で耐熱性に優れた無機質のセラミツクフ
アイバーからなる充填材を外部に漏出しないよ
うに充填してこの充填材を加熱固化するだけで
よいので、抵抗体の組立作業が容易に行い得る
と共に、グリツド状に形成された抵抗素体内の
空隙部分は電圧が低いので、前記空隙を小さく
して抵抗素体をグリツド状に配置することが可
能となり、しかも、上記空隙部分は大きな電圧
がかからないために安価な絶縁物を使用するこ
とができ、逆に、抵抗素体とシールドケースと
の間は大きな電圧がかかるので、この間のみ絶
縁性能の優れたアルミナ粉からなる絶縁材を充
填させてある結果、本発明の抵抗器は、抵抗素
体の小形化と高価な絶縁物の使用を必然的に低
減することができるので、小形で経済的に製作
し得る利点もある。このため、本発明の抵抗器
を使用することによつて、電力用の中性点接地
抵抗装置を小形化することが可能となり、その
据付面積を減少させることができる。(3) Furthermore, there is no need to form the antibody body in a grid shape and individually pack insulating spacers into the voids created within the resistor body, as in the past.
All you need to do is fill the filler made of inorganic ceramic fiber with high viscosity and excellent heat resistance so that it does not leak to the outside, and then heat and solidify the filler, which makes it easy to assemble the resistor. Since the voltage is low in the gap in the resistor element formed in a grid shape, it is possible to make the gap smaller and arrange the resistor element in a grid shape.Moreover, since a large voltage is not applied to the gap part, the voltage is low. Cheap insulators can be used; conversely, since a large voltage is applied between the resistor element and the shield case, an insulating material made of alumina powder with excellent insulation performance is filled only in this area. The resistor of the present invention has the advantage that it can be manufactured compactly and economically, since the resistor element can be made smaller and the use of expensive insulators can be necessarily reduced. Therefore, by using the resistor of the present invention, it is possible to downsize a power neutral point grounding resistance device, and the installation area thereof can be reduced.
(4) 又、本発明の抵抗器は電界緩和の処置が施さ
れ、しかも、抵抗器自体の発熱温度が高くなら
ないように設けてあり、その上、抵抗器内には
絶縁媒体としてのSF6ガスを用いていないの
で、抵抗器を長期間安定した状態で使用するこ
とができる。(4) Furthermore, the resistor of the present invention is treated to reduce the electric field, and is provided so that the heat generation temperature of the resistor itself does not become high . Since no gas is used, the resistor can be used in a stable state for a long period of time.
以上説明したように、本発明は抵抗器の抵抗素
体を断熱層内に強固に包埋してその機械的強度を
強くして抵抗体を構成し、この抵抗体をシールド
ケース内において絶縁性能に優れた絶縁材により
包囲せしめて気密に収納固定しているので、小形
で熱的性能および機械的強度が優れ、しかも、経
済的な製作を可能とした封入形抵抗器を提供する
ことができる。 As explained above, the present invention configures a resistor by firmly embedding the resistance element of a resistor in a heat insulating layer to increase its mechanical strength, and then arranging this resistor in a shielding case to achieve insulation performance. Since the resistor is surrounded by an excellent insulating material and stored and fixed airtight, it is possible to provide an encapsulated resistor that is small, has excellent thermal performance and mechanical strength, and can be manufactured economically. .
第１図は従来の抵抗器を備えた中性点接地抵抗
装置の設置状態を示す概略図、第２図および第３
図はそれぞれ従来の抵抗器を示す横断面図、第４
図は本発明の封入形抵抗器を備えた中性点接地抵
抗装置の設置状態を示す概略図、第５図は本発明
の抵抗器の横断面図、第６図は抵抗器の内部機構
を示す断面図である。
１１……シールドケース、１２……抵抗体、１
２ａ……抵抗素体、１３……絶縁板、１４……断
熱層、１７……絶縁材、１８……抵抗器。
Figure 1 is a schematic diagram showing the installation state of a neutral point grounding resistance device equipped with a conventional resistor, Figures 2 and 3
The figures are a cross-sectional view showing a conventional resistor, and a fourth
The figure is a schematic diagram showing the installation state of a neutral point grounding resistance device equipped with an encapsulated resistor of the present invention, Figure 5 is a cross-sectional view of the resistor of the present invention, and Figure 6 shows the internal mechanism of the resistor. FIG. 11... Shield case, 12... Resistor, 1
2a... Resistor element, 13... Insulating plate, 14... Heat insulating layer, 17... Insulating material, 18... Resistor.
Claims (1)
状に設けた抵抗素体とを交互に所要段数積み重
ね、上記各段の抵抗素体と絶縁板との間に生ずる
〓間に絶縁と断熱機能を備えた比較的流動性の少
ない高粘性で耐熱性に優れた充填材を充填・固化
させてこの充填材と絶縁板との間に抵抗素体を埋
設させた状態で断熱層を形成して抵抗体を構成
し、この抵抗体をシールドケース内に収納固定
し、内部に断熱層を設けた上記抵抗体とシールド
ケースとの間の空間にアルミナ粉からなる無機質
の絶縁材を気密に封入して成る封入形抵抗器。1 Insulating plates with insulation and heat insulation functions and resistor elements provided in a grid pattern are stacked alternately in the required number of stages, and the insulation and heat insulation functions are created between the resistor elements of each stage and the insulation plates. A heat insulating layer is formed by filling and solidifying a highly viscous filler with relatively low fluidity and excellent heat resistance, and with a resistive element buried between the filler and the insulating plate. A resistor is constructed, this resistor is housed and fixed in a shield case, and an inorganic insulating material made of alumina powder is hermetically sealed in the space between the resistor and the shield case, which has a heat insulating layer inside. A sealed resistor consisting of
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23703283A JPS60127701A (en) | 1983-12-14 | 1983-12-14 | Enclosed resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23703283A JPS60127701A (en) | 1983-12-14 | 1983-12-14 | Enclosed resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60127701A JPS60127701A (en) | 1985-07-08 |
| JPH0360162B2 true JPH0360162B2 (en) | 1991-09-12 |
Family
ID=17009380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23703283A Granted JPS60127701A (en) | 1983-12-14 | 1983-12-14 | Enclosed resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60127701A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5110572B2 (en) * | 2007-06-29 | 2012-12-26 | コーア株式会社 | Cement resistor and manufacturing method thereof |
| JP5110571B2 (en) * | 2007-06-29 | 2012-12-26 | コーア株式会社 | Cement resistor and manufacturing method thereof |
-
1983
- 1983-12-14 JP JP23703283A patent/JPS60127701A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60127701A (en) | 1985-07-08 |
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