JPH0360766B2 - - Google Patents
Info
- Publication number
- JPH0360766B2 JPH0360766B2 JP58039095A JP3909583A JPH0360766B2 JP H0360766 B2 JPH0360766 B2 JP H0360766B2 JP 58039095 A JP58039095 A JP 58039095A JP 3909583 A JP3909583 A JP 3909583A JP H0360766 B2 JPH0360766 B2 JP H0360766B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- ppm
- metal
- less
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/061—Graphite
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/062—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/068—Crystal growth
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Description
本発明はダイヤモンド種子を用いたダイヤモン
ド合成法に関し、その目的は自形性が良く、結晶
欠陥が少ない高純度のダイヤモンドを合成するこ
とにある。
ダイヤモンド合成において、結晶粒子を大きく
するためダイヤモンド種子結晶を用いる方法は古
くから知られている。この場合、ダイヤモンド合
成の溶媒(触媒)金属を種子の周囲にメツキして
おき、これと炭素とよりダイヤモンド合成を行な
つて種子結晶を成長させる方法も知られている
(特公昭49−4630)。
ダイヤモンドを砥粒として使用する場合、その
粒子は外形が扁平等でない、いわゆる自形性に優
れたものであること、粒子内部に気孔等の結晶欠
陥が少ないことなどが重要である。そして、この
自形性や結晶欠陥には不純物の影響が大きい。
本発明者はこれらの点について種々研究した結
果、前記した溶媒金属による種子のメツキ法は有
効な手段だが、従来提唱されているように単に電
解或いは無電解メツキしただけでは良質のダイヤ
モンドにはならない。その原因の多くはメツキの
際に巻き込まれる不純物によるものであることが
わかつた。特に不純物として影響の大きいのは酸
素と窒素である。
そこで本発明はダイヤモンド種子を溶媒金属で
被覆して用いる際、その金属中の酸素含有量を
100PPM以下、望ましくは50PPM以下、窒素含
有量を100PPM以下、望ましくは50PPM以下と
したものである。
被覆したダイヤモンド種子は使用する際これら
の不純物が上記の範囲に入つていればよいので、
被覆方法自体において、不純物が入らないような
方法を採つてもよく、また被覆後に不純物を除去
してもよい。この被覆には化学的なメツキの外、
物理的な蒸着、塗布も含まれる。
以下、ダイヤモンド種子を溶媒金属で被覆し、
その金属の酸素、窒素含有量が前記の範囲に入る
ようにする各種の方法について説明する。
先ず第1は化合物の固相分解、還元等化学的方
法で溶媒金属をメツキ後、還元雰囲気下で熱処理
し、不純物を除去する方法である。化合物の熱分
解によつて目的とする金属をダイヤモンド種子に
被覆する方法としては、例えば、溶媒金属の酢酸
塩等有機酸塩でダイヤモンド種子を被覆し、加熱
して化合物を分解し、残つた金属でダイヤモンド
を被覆する。還元メツキする方法には周知のよう
に無電解又は電解メツキの方法がある。本発明は
これらのいずれでもよい。
このようにしてメツキされた金属は一般的には
酸素や窒素の含有量が前記の範囲を越える場合が
多い。例えば熱分解法では塩化白金酸水溶液、酢
酸ニツケル等の水溶液にダイヤモンド粒を混合し
水を蒸発乾固し、水素気流中、500〜600℃で処理
すると酸素、窒素等を含まないニツケル被覆ダイ
ヤモンド粒を得ることができる。電解法では先ず
無電解で少量のニツケル等を被覆し、この上に金
属塩の水溶液電解で金属を被覆する。
無電解法は硫酸ニツケル等の水溶液にダイヤモ
ンド粒を浸し、次亜燐酸ナトリウム、ヒドラジン
等で還元し、ニツケルを被覆する。
この酸素、窒素を低減させるため水素雰囲気等
の還元雰囲気下で加熱処理する。加熱温度は400
〜900℃の範囲が適当である。この加熱後はさら
に減圧加熱して水素等を除去することが望まし
い。
被覆法の第2は被覆方法自体において不純物が
入らないような方法を採ることである。これには
気相からの化学蒸着法(CVD法)、真空蒸着法、
イオンプレーテイング法などの物理蒸着法などを
用いることができる。CVD法は例えばNiCl2、
FeCl2等の化合物を水素雰囲気下で加熱し、還元
すると同時にNi等をダイヤモンド粒子に付着さ
せる。この際ダイヤモンド粒子の周囲を被覆する
ため、粒子を撹拌しながら行なう。
真空蒸着法はダイヤモンド粒子を撹拌しながら
真空蒸着装置で金属を被覆する。その他周知のイ
オンプレーテイング法、スパツタ法、溶射法等を
用いることができる。
これらの方法によれば高純度の金属被覆ができ
るので、その後の還元処理等は多くの場合必要な
いが、不純物が多い場合は後処理をしてもよい。
溶媒金属被覆の第3の方法はダイヤモンド種子
に金属粉末を機械的に圧着する方法である。この
方法はダイヤモンド種子より金属粉末を細かくし
て、両者を混合し、共にミリングして金属粉末を
ダイヤモンドに圧着するように塗布する方法であ
る。この方法では装置上、酸素や窒素が入り易
い。従つて前記の第1の方法の場合と同様後処理
を行なう。
このようにして酸素と窒素の含有量を抑制した
金属被覆ダイヤモンド種子を用いれば良質のダイ
ヤモンドが得られる。
溶媒金属としてはFe,Co,Ni等の第8族の金
属、Cr,Mo,Ta等の金属、及びこれらの合金
が用いられる。
ダイヤモンドの種子の大きさは一般的には
30μm以上のものが用いられ、上限には制限がな
い。被覆金属の厚みは1μm〜100μm程度がよい。
実施例
実施例 1
(1) #120/140のダイヤモンド粒100gの表面を
有機溶剤、酸、アルカリにより充分清浄化した
後、塩化第1スズ、塩酸々性水溶液にて感受性
化し、塩化パラジウム塩酸々性水溶液にて活性
化する。
通常の無電解ニツケルコート浴(硫酸ニツケル
0.1M、次亜リン酸ナトリウム0.2M、酢酸ナトリ
ウム0.3M、コハク酸ナトリウム0.02M、クエン
酸ナトリウム0.02M)800ml中に温度80℃として
上記ダイヤモンド粒子100CTを入れ、それらが沈
降しない程度に撹拌しながら、ダイヤモンド表面
に、ニツケルを約1μmの厚さで被覆した。
つづいて、電解槽廻転式電解装置により、ニツ
ケルを厚付け被覆した(約30μm)。
つづいて、電解時に同時電着した水酸化物等不
純物を除去するため、電気炉で、水素気流中700
℃で還元処理を行なつた。
被覆されたニツケル中の酸素、窒素の含有量は
それぞれ70ppm、50ppmであつた。また結晶は淡
黄色であつた。
このようにして得られたニツケル被覆したダイ
ヤモンドを2重量部、黒鉛板を100重量部、30Ni
−70Fe合金板100重量部を積層配置して、超高圧
装置に装填し、58000気圧、1450℃でダイヤモン
ド種子晶を成長させた。
得られたダイヤモンド約400μmで、形状は6〜
8面体で、結晶欠陥の少ない良晶であつた。
比較例 1
比較のため清浄化処理なし、すなわち実施例1
の水素気流中還元処理を行なわない場合、酸素、
窒素含有量はそれぞれ300ppm、80ppmであつた。
還元処理を行なわない状態で実施例1と同じよう
にダイヤモンド合成を行つた。
ここで得られたダイヤモンドは約400μmで、形
状は6〜8面体であるが、結晶欠陥は多いもの
で、結晶内部には気泡、炭化物の取り込みが多
く、欠陥の多い濃黄色の結晶であつた。
実施例 2
#100/120のダイヤモンド粒50gに、ニツケル
を50μmの厚みで気相メツキした。方法は、Ni
(Co)4を用い、Ar気流中、200℃にてメツキした
後さらに水素気流中700℃にて1hr処理し、最後に
10-7Torrの真空中600℃にて1hr脱ガス処理した。
被覆されたニツケル中の酸素、窒素の含有量はそ
れぞれ20ppm、30ppmであつた。この被覆ダイヤ
モンドを使用し、以下実施例1と同様にダイヤ結
晶を得た。
比較例 2
実施例1にて、水素流量を半分にした。その結
果、酸素、窒素含有量はそれぞれ140,100ppmで
あつた。
比較例 3
#120/140のダイヤモンド粒100gにコバルト
を20μmの厚みで気相メツキした。方法はCoCl3
を用い、H2気流中にて400℃にて行なつた。被覆
したコバルト中の酸素、窒素含有量は、それぞれ
60ppm,180ppmであつた。ダイヤ結晶の色は、
濃黄色〜淡緑色であつた。
H2+N2雰囲気中、1100℃、1時間焼成後の、
処理前との単粒圧壊強度比をまとめて示す。
The present invention relates to a diamond synthesis method using diamond seeds, and its purpose is to synthesize high-purity diamond with good euhedral property and few crystal defects. In diamond synthesis, the method of using diamond seed crystals to enlarge crystal particles has been known for a long time. In this case, a method is also known in which a solvent (catalyst) metal for diamond synthesis is plated around the seed, and this and carbon are used to synthesize diamond to grow seed crystals (Japanese Patent Publication No. 49-4630). . When diamond is used as an abrasive grain, it is important that the outer shape of the diamond is not uniform, that is, it is excellent in so-called euhedral property, and that there are few crystal defects such as pores inside the grain. Impurities have a large influence on this euhedorality and crystal defects. As a result of various studies on these points, the inventor of the present invention found that although the method of plating seeds with a solvent metal as described above is an effective method, mere electrolytic or electroless plating, as proposed in the past, does not result in high-quality diamonds. . It was found that most of the causes were due to impurities that were introduced during plating. Oxygen and nitrogen are particularly influential impurities. Therefore, when diamond seeds are coated with a solvent metal and used, the present invention reduces the oxygen content in the metal.
The nitrogen content is 100 PPM or less, preferably 50 PPM or less, and the nitrogen content is 100 PPM or less, preferably 50 PPM or less. Coated diamond seeds only need to contain these impurities within the above range when used.
In the coating method itself, a method that prevents impurities from entering may be adopted, or impurities may be removed after coating. In addition to chemical plating, this coating
Also includes physical vapor deposition and coating. Below, diamond seeds are coated with solvent metal,
Various methods for bringing the oxygen and nitrogen contents of the metal into the above range will be explained. The first method is to plate a solvent metal using a chemical method such as solid-phase decomposition or reduction of a compound, and then heat treat it in a reducing atmosphere to remove impurities. A method of coating a diamond seed with a target metal by thermal decomposition of a compound is, for example, coating a diamond seed with an organic acid salt such as acetate of a solvent metal, heating it to decompose the compound, and removing the remaining metal. coat the diamond with As is well known, reduction plating methods include electroless plating and electrolytic plating. The present invention may be applied to any of these. Generally, the metal plated in this manner often has an oxygen or nitrogen content exceeding the above range. For example, in the thermal decomposition method, diamond grains are mixed with an aqueous solution of chloroplatinic acid, nickel acetate, etc., the water is evaporated to dryness, and the nickel-coated diamond grains, which do not contain oxygen or nitrogen, are treated at 500 to 600°C in a hydrogen stream. can be obtained. In the electrolytic method, a small amount of nickel or the like is first coated electrolessly, and then a metal is coated on top of this by electrolysis of an aqueous solution of a metal salt. In the electroless method, diamond grains are immersed in an aqueous solution of nickel sulfate, etc., and then reduced with sodium hypophosphite, hydrazine, etc., and coated with nickel. In order to reduce this oxygen and nitrogen, heat treatment is performed in a reducing atmosphere such as a hydrogen atmosphere. Heating temperature is 400
A range of ~900°C is suitable. After this heating, it is desirable to further heat under reduced pressure to remove hydrogen and the like. The second coating method is to adopt a method that prevents impurities from entering the coating method itself. This includes chemical vapor deposition (CVD) from the gas phase, vacuum evaporation,
A physical vapor deposition method such as an ion plating method can be used. For example, the CVD method uses NiCl 2 ,
Compounds such as FeCl 2 are heated in a hydrogen atmosphere to reduce them and at the same time attach Ni, etc. to diamond particles. At this time, in order to coat the periphery of the diamond particles, the diamond particles are stirred. In the vacuum evaporation method, diamond particles are coated with metal using a vacuum evaporation device while stirring. Other well-known ion plating methods, sputtering methods, thermal spraying methods, etc. can be used. According to these methods, a highly pure metal coating can be obtained, so subsequent reduction treatment etc. are not necessary in many cases, but if there are many impurities, post-treatment may be performed. A third method of solvent metal coating is mechanical compression of metal powder onto the diamond seeds. This method involves making the metal powder finer than the diamond seed, mixing the two, milling them together, and applying the metal powder to the diamond so as to press it into place. In this method, oxygen and nitrogen easily enter the apparatus. Therefore, post-processing is performed in the same manner as in the first method. By using metal-coated diamond seeds with reduced oxygen and nitrogen contents, high-quality diamonds can be obtained. As the solvent metal, Group 8 metals such as Fe, Co, and Ni, metals such as Cr, Mo, and Ta, and alloys thereof are used. Generally speaking, the size of diamond seeds is
A material of 30 μm or more is used, and there is no upper limit. The thickness of the coating metal is preferably about 1 μm to 100 μm. Examples Example 1 (1) After thoroughly cleaning the surface of 100 g of #120/140 diamond grains with an organic solvent, acid, or alkali, sensitize it with an aqueous solution of stannous chloride, hydrochloric acid, and palladium chloride. Activated in aqueous solution. Ordinary electroless nickel coat bath (nickel sulfate)
0.1M, sodium hypophosphite 0.2M, sodium acetate 0.3M, sodium succinate 0.02M, sodium citrate 0.02M) 100CT of the above diamond particles were placed in 800ml at a temperature of 80°C, and stirred to the extent that they did not settle. Meanwhile, the diamond surface was coated with nickel to a thickness of approximately 1 μm. Next, a thick coating of nickel (approximately 30 μm) was applied using an electrolytic cell rotation type electrolyzer. Next, in order to remove impurities such as hydroxides that were simultaneously electrodeposited during electrolysis, the electrodes were heated in an electric furnace for 700°C in a hydrogen stream.
Reduction treatment was carried out at ℃. The oxygen and nitrogen contents in the coated nickel were 70 ppm and 50 ppm, respectively. Moreover, the crystals were pale yellow. 2 parts by weight of the nickel-coated diamond thus obtained, 100 parts by weight of graphite plate, 30Ni
100 parts by weight of -70Fe alloy plates were stacked and placed in an ultra-high pressure device, and diamond seed crystals were grown at 58,000 atm and 1,450°C. The obtained diamond is approximately 400 μm in diameter and has a shape of 6 to 6.
It had an octahedral shape and was a good crystal with few crystal defects. Comparative Example 1 No cleaning treatment for comparison, i.e. Example 1
If reduction treatment is not performed in a hydrogen stream, oxygen,
The nitrogen content was 300 ppm and 80 ppm, respectively.
Diamond synthesis was carried out in the same manner as in Example 1 without performing the reduction treatment. The diamond obtained here was approximately 400 μm in size and had a hexagonal to octahedral shape, but it had many crystal defects, with many air bubbles and carbides trapped inside the crystal, and it was a dark yellow crystal with many defects. . Example 2 50 g of #100/120 diamond grains were vapor-phase plated with nickel to a thickness of 50 μm. The method is Ni
(Co) 4 was plated at 200℃ in an Ar flow, and then treated for 1 hour at 700℃ in a hydrogen flow, and finally
Degas treatment was performed at 600° C. for 1 hour in a vacuum of 10 −7 Torr.
The oxygen and nitrogen contents in the coated nickel were 20 ppm and 30 ppm, respectively. Using this coated diamond, a diamond crystal was obtained in the same manner as in Example 1. Comparative Example 2 In Example 1, the hydrogen flow rate was halved. As a result, the oxygen and nitrogen contents were 140 and 100 ppm, respectively. Comparative Example 3 100 g of #120/140 diamond grains were coated with cobalt to a thickness of 20 μm in a vapor phase. The method is CoCl 3
The experiments were carried out at 400° C. in a H 2 stream. The oxygen and nitrogen contents in the coated cobalt are respectively
They were 60ppm and 180ppm. The color of the diamond crystal is
It was dark yellow to pale green. After baking for 1 hour at 1100℃ in H 2 + N 2 atmosphere,
A summary of the single grain crushing strength ratio with that before treatment is shown.
【表】
この結果より、本発明の被覆金属中の酸素およ
び窒素含有量をそれぞれ100ppm以下にすること
が効果があることがわかる。[Table] This result shows that it is effective to reduce the oxygen and nitrogen contents in the coated metal of the present invention to 100 ppm or less, respectively.
Claims (1)
たダイヤモンド合成法において、ダイヤモンド種
子を溶媒金属で被覆し、その被覆した金属の酸素
含有量を100PPM以下、窒素含有量を100PPM以
下とすることを特徴とするダイヤモンド合成法。 2 ダイヤモンド種子を固相分解、無電解又は電
解により溶媒金属をメツキし、還元雰囲気下で熱
処理してメツキ金属の酸素含有量100PPM以下、
窒素含有量100PPM以下とすることを特徴とする
特許請求の範囲第1項記載のダイヤモンド合成
法。 3 ダイヤモンド種子を化学蒸着法又は物理蒸着
法により溶媒金属をメツキし、そのメツキ金属の
酸素含有量50PPM以下、窒素含有量50PPM以下
とすることを特徴とする特許請求の範囲第1項記
載のダイヤモンド合成法。 4 ダイヤモンド種子と溶媒金属粉末との混合粉
末をミリングして機械的にダイヤモンド粒子の表
面に溶媒金属粉末を塗布し、還元雰囲気下で熱処
理して塗布金属の酸素含有量100PPM以下、窒素
含有量100PPM以下とすることを特徴とする特許
請求の範囲第1項記載のダイヤモンド合成法。[Claims] 1. In a diamond synthesis method using a solvent metal, carbon, and a diamond seed, the diamond seed is coated with a solvent metal, and the coated metal has an oxygen content of 100 PPM or less and a nitrogen content of 100 PPM or less. A diamond synthesis method characterized by: 2 Diamond seeds are plated with solvent metal by solid-phase decomposition, electroless or electrolytic, and heat treated in a reducing atmosphere to reduce the oxygen content of the plated metal to 100 PPM or less.
The diamond synthesis method according to claim 1, characterized in that the nitrogen content is 100 PPM or less. 3. The diamond according to claim 1, wherein diamond seeds are plated with a solvent metal by chemical vapor deposition or physical vapor deposition, and the plated metal has an oxygen content of 50 PPM or less and a nitrogen content of 50 PPM or less. Synthesis method. 4 Milling a mixed powder of diamond seeds and solvent metal powder, mechanically applying the solvent metal powder to the surface of the diamond particles, and heat-treating in a reducing atmosphere to reduce the oxygen content of the coated metal to 100 PPM or less and the nitrogen content to 100 PPM. A diamond synthesis method according to claim 1, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58039095A JPS59164607A (en) | 1983-03-11 | 1983-03-11 | Method for synthesizing diamond |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58039095A JPS59164607A (en) | 1983-03-11 | 1983-03-11 | Method for synthesizing diamond |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59164607A JPS59164607A (en) | 1984-09-17 |
| JPH0360766B2 true JPH0360766B2 (en) | 1991-09-17 |
Family
ID=12543517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58039095A Granted JPS59164607A (en) | 1983-03-11 | 1983-03-11 | Method for synthesizing diamond |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59164607A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5273730A (en) * | 1988-03-08 | 1993-12-28 | Sumitomo Electric Industries, Ltd. | Method of synthesizing diamond |
| JPH01284330A (en) * | 1988-05-10 | 1989-11-15 | Tatsuro Kuratomi | Method of growing diamond powder of small grain size |
| JP2730144B2 (en) * | 1989-03-07 | 1998-03-25 | 住友電気工業株式会社 | Single crystal diamond layer formation method |
| JPH08337498A (en) * | 1995-04-13 | 1996-12-24 | Sumitomo Electric Ind Ltd | DIAMOND PARTICLES, DIAMOND SYNTHESIS PARTICLES, CONCENTRATED BODY, AND METHODS FOR PRODUCING THEM |
| CN101247882B (en) | 2005-05-31 | 2012-09-05 | 六号元素(产品)(控股)公司 | Method for coating diamond seed crystal |
| WO2009013715A2 (en) * | 2007-07-23 | 2009-01-29 | Element Six Limited | Method for manufacturing encapsulated superhard material |
| US9567506B2 (en) | 2007-07-23 | 2017-02-14 | Element Six Limited | Method for manufacturing encapsulated superhard material |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5214685B2 (en) * | 1972-05-08 | 1977-04-23 | ||
| JPS5382692A (en) * | 1976-12-28 | 1978-07-21 | Ishizuka Kenkyusho | Method of treating solvent metal for use in reaction of diamond synthethis |
-
1983
- 1983-03-11 JP JP58039095A patent/JPS59164607A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59164607A (en) | 1984-09-17 |
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