JPH0360855B2 - - Google Patents
Info
- Publication number
- JPH0360855B2 JPH0360855B2 JP61256943A JP25694386A JPH0360855B2 JP H0360855 B2 JPH0360855 B2 JP H0360855B2 JP 61256943 A JP61256943 A JP 61256943A JP 25694386 A JP25694386 A JP 25694386A JP H0360855 B2 JPH0360855 B2 JP H0360855B2
- Authority
- JP
- Japan
- Prior art keywords
- sic
- whisker
- aqueous solution
- preform
- whiskers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Reinforced Plastic Materials (AREA)
Description
〔産業上の利用分野〕
本発明は、金属あるいはプラスチツクなどのマ
トリツクス物質を溶浸して繊維強化複合材を形成
する際、その繊維質骨格として用いるSiCウイス
カープリフオームの製造方法に関する。
〔従来の技術〕
ウイスカーなどの短繊維状物質を強化材として
繊維強化複合材を製造するための有効な手段に、
所定形状に形成したウイスカーのプリフオームを
モールド内に設置しこのプリフオームに液状のマ
トリツクス物質を圧入固化させる方法がある。こ
の方法によつて得られる複合材の特性は、繊維質
骨格となるウイスカープリフオームの組織構造、
とりわけその均質性に大きく影響を受ける。均質
組織のウイスカープリフオームを形成するために
は、ウイスカー生成物を水または有機溶媒に分散
させたのち加圧下に高速過し、得られた湿潤ウ
イスカーケーキをそのままもしくは所定密度に圧
縮して乾燥処理する方法(特開昭60−161400号)
が効果的であるが、本方法を採る場合には操作過
程におけるウイスカーの沈降現像を避けることが
困難で、ウイスカーストークス径の差異に基づく
上下方向の密度変動を生じる難点がある。
上記の課題を解消するためには、ウイスカーが
均質かつ安定に溶液分散しうる状態を形成すれば
よい。出願人はこの目的に沿う方法として、SiC
ウイスカーを濃度1N以上の強酸あるいは強塩基
で処理して表面性状を改質することにより分散安
定を図る技術を開発した(特願昭60−96730号、
同60−96731号)。
〔発明が解決しようとする問題点〕
ところが、上述した強酸、強塩基により処理す
る先行技術は時として満足する分散安定度が得ら
れず、効果の再現が必ずしも十分に生じない問題
点があつた。
発明者らはこの原因について究明した結果、処
理すべきSiCウイスカーの表面に付着するSiO2の
量が再現変動の主因であり、とりわけSiO2付着
含有率が0.5重量%以下のSiCウイスカーでは分散
の安定度が低下傾向を示すことを確認した。
通常、SiCウイスカーは製造あるいは後処理の
過程で表面にSiO2が生成付着する場合がある。
このSiO2成分の存在は複合用途によつては許容
されることもあるが、高性能のFRMを得るなど
の目的には特性劣化の要因となる。したがつて、
SiO2を付着含有しないSiCウイスカーによる均質
組織のプリフオーム化も極めて重要な課題であ
る。
〔問題点を解決するための手段〕
本発明は上記の知見ならびに要請に基づいて開
発したもので、とくにSiO2付着含有率が0.5重量
%以下のSiCウイスカーを用いた際に有効なプリ
フオームの製造方法を提供するものである。
すなわち、本発明はSiCウイスカーを弱塩基水
溶液に分散したのち過処理し、形成された湿潤
ウイスカーケーキをそのままもしくは所定密度に
圧縮して乾燥することを構成的特徴とする。
SiCウイスカーは直径0.1〜5.0μm、長さ10〜
500μmの微細短繊維状のβ型単結晶で、本発明
では特にSiO2付着含有率が0.5重量%以下のもの
が対象となる。したがつて、SiO2付着含有率が
0.5重量%を越える場合には、HF処理等の手段で
精製したのち使用に供される。
SiCウイスカーは適宜な解繊処理により絡み合
いを解きほぐしたのち、弱塩基水溶液に分散す
る。
弱塩基水溶液とは、例えばNH4OH、
CH3NH2、NaHCO3など電離定数の小さな塩基
性物質を溶解した水溶液で、この点が強塩基処理
を要件とする先行技術と異なるところである。弱
塩基水溶液としては、含有成分が加熱乾燥時にプ
リフオーム組織中から容易に揮散除去することが
できるNH4OH水溶液を用いることが好適であ
る。また、水溶液のPHは10以上に保持することが
望ましい。
SiCウイスカーの弱塩基水溶液への分散は、撹
拌混合によつておこなわれる。
このようにして調製した分散液は、SiCウイス
カーが均質かつ安定して分散するサスペンジヨン
状態を呈する。この分散液は、所望形状の過成
形器を介して過処理し、分散媒を除去して形成
された湿潤ウイスカーケーキをそのままもしくは
複合化する際のVf値を考慮して所定密度に圧縮
したのち乾燥することにより均質組織のSiCウイ
スカープリフオームを得る。
〔作用〕
分散媒中のSiCウイスカーはセミコロイド的な
挙動を示し、その分散性は分散媒界面における電
気二重層の界面電位に大きく影響される。本発明
では、分散媒のPHを弱塩基性に保持することによ
り介在するSiCウイスカーのξ電位を負の値にな
る条件を与え、よつて再凝集し難い均質、安定な
分散状態の維持機能をもたらしたものである。
〔実施例〕
SiO2付着含有率が0.48重量%と0.15重量%のβ
型SiCウイスカー(直径0.5〜1.5μm、長さ10〜
300μm)を0.3%濃度のNH4OH水溶液(PH11.1)
に5重量%の割合で添加し、撹拌器で十分に撹拌
混合した。分散液を1時間静置したのち円筒型加
圧過成形器に流入して高速過し、形成された
湿潤ウイスカーケーキを100℃で16時間乾燥して
直径80mm、高さ約100mmの円柱状SiCウイスカー
プリフオームを製造した。
製造されたプリフオームの乾燥前後における膨
張変化率および表面の亀裂発生状況を測定観察し
たのち、上から6等分に水平輪切りして各試片の
Vf値変動を調べた。
比較のために、分散媒に純水(イオン交換処理
水)を用いた例(比較例1)およびSiCウイスカ
ーを2N−KOH水溶液中で煮沸処理したのち水洗
してPH8.0に調整した分散液を用いた例(比較例
2)についても、他の条件を実施例と同様にして
プリフオーム化をおこなつた。
これらの測定観察データを表に対比して示し
た。
[Industrial Application Field] The present invention relates to a method for manufacturing a SiC whisker preform used as a fibrous skeleton when forming a fiber-reinforced composite material by infiltrating a matrix material such as metal or plastic. [Prior Art] An effective means for producing fiber-reinforced composite materials using short fibrous substances such as whiskers as reinforcing materials.
There is a method in which a whisker preform formed into a predetermined shape is placed in a mold, and a liquid matrix material is forced into the preform and solidified. The characteristics of the composite material obtained by this method are the structure of the whisker preform, which is the fibrous skeleton;
In particular, it is greatly influenced by its homogeneity. In order to form a whisker preform with a homogeneous structure, the whisker product is dispersed in water or an organic solvent and then subjected to high-speed filtration under pressure, and the resulting wet whisker cake is dried as is or compressed to a predetermined density. Method of
is effective, but when this method is adopted, it is difficult to avoid sedimentation and development of whiskers during the operation process, and there is a drawback that density fluctuations in the vertical direction occur due to differences in whisker Stokes diameters. In order to solve the above problem, it is sufficient to create a state in which whiskers can be uniformly and stably dispersed in solution. The applicant has proposed SiC as a method to meet this objective.
We have developed a technology for stabilizing dispersion by treating whiskers with a strong acid or strong base at a concentration of 1N or higher to modify their surface properties (Patent Application No. 1986-96730,
60-96731). [Problems to be Solved by the Invention] However, the above-mentioned prior art methods of treatment with strong acids and strong bases sometimes did not provide satisfactory dispersion stability, and there were problems in which the effects could not always be reproduced satisfactorily. . As a result of investigating the cause of this, the inventors found that the main cause of the reproducibility variation was the amount of SiO 2 attached to the surface of the SiC whiskers to be treated, and especially for SiC whiskers with an attached SiO 2 content of 0.5% by weight or less, the dispersion was affected. It was confirmed that the stability showed a decreasing tendency. Normally, SiO 2 may be generated and adhered to the surface of SiC whiskers during the manufacturing or post-processing process.
Although the presence of this SiO 2 component may be tolerated in some composite applications, it becomes a factor in deteriorating properties for purposes such as obtaining a high-performance FRM. Therefore,
Preforming a homogeneous structure using SiC whiskers that do not contain SiO 2 is also an extremely important issue. [Means for Solving the Problems] The present invention was developed based on the above findings and requests, and is particularly effective in manufacturing a preform when using SiC whiskers with a SiO 2 adhesion content of 0.5% by weight or less. The present invention provides a method. That is, the present invention is characterized in that SiC whiskers are dispersed in a weak base aqueous solution and then overtreated, and the formed wet whisker cake is dried as it is or compressed to a predetermined density. SiC whiskers have a diameter of 0.1~5.0μm and a length of 10~
The present invention particularly targets β-type single crystals in the form of fine short fibers of 500 μm, with an SiO 2 adhesion content of 0.5% by weight or less. Therefore, the SiO 2 adhesion content is
If it exceeds 0.5% by weight, it is used after being purified by means such as HF treatment. After the SiC whiskers are disentangled by an appropriate defibration treatment, they are dispersed in a weak base aqueous solution. The weak base aqueous solution is, for example, NH 4 OH,
This is an aqueous solution in which a basic substance with a small ionization constant such as CH 3 NH 2 or NaHCO 3 is dissolved, and in this point it differs from the prior art, which requires treatment with a strong base. As the weak base aqueous solution, it is preferable to use an NH 4 OH aqueous solution whose contained components can be easily volatilized and removed from the preform structure during heat drying. Furthermore, it is desirable to maintain the pH of the aqueous solution at 10 or higher. Dispersion of SiC whiskers into a weak base aqueous solution is performed by stirring and mixing. The dispersion liquid prepared in this manner exhibits a suspension state in which SiC whiskers are homogeneously and stably dispersed. This dispersion liquid is overtreated through an overformer of a desired shape, and the wet whisker cake formed by removing the dispersion medium is compressed to a predetermined density in consideration of the Vf value when forming it as it is or when compounding. By drying, a SiC whisker preform with a homogeneous structure is obtained. [Operation] SiC whiskers in the dispersion medium exhibit semicolloidal behavior, and their dispersibility is greatly influenced by the interfacial potential of the electric double layer at the dispersion medium interface. In the present invention, by maintaining the PH of the dispersion medium at a weak basic level, conditions are provided for the ξ potential of the intervening SiC whiskers to be a negative value, thereby maintaining the ability to maintain a homogeneous and stable dispersion state that is difficult to reagglomerate. This is what it brought. [Example] β with SiO 2 adhesion content of 0.48 wt% and 0.15 wt%
type SiC whisker (diameter 0.5~1.5μm, length 10~
300μm) in 0.3% concentration NH 4 OH aqueous solution (PH11.1)
was added at a ratio of 5% by weight, and thoroughly stirred and mixed using a stirrer. After the dispersion was allowed to stand for 1 hour, it flowed into a cylindrical pressure overformer and passed through at high speed. The formed wet whisker cake was dried at 100°C for 16 hours to form a cylindrical SiC with a diameter of 80 mm and a height of approximately 100 mm. A whisker preform was manufactured. After measuring and observing the expansion change rate and surface crack occurrence before and after drying of the manufactured preform, each specimen was horizontally sliced into 6 equal parts from the top.
Vf value fluctuations were investigated. For comparison, an example using pure water (ion exchange treated water) as the dispersion medium (Comparative Example 1) and a dispersion liquid in which SiC whiskers were boiled in a 2N-KOH aqueous solution and then washed with water to adjust the pH to 8.0. Regarding the example using (Comparative Example 2), preforming was also carried out under the same conditions as in the example. These measured and observed data are shown in a table for comparison.
【表】【table】
本発明によれば、とくにSiO2付着含有率の少
ないSiCウイスカーを用いた際に均質な組織構造
と乾燥膨張に伴なう亀裂を生じることのない強固
なSiCウイスカープリフオームの製造が可能とな
る。したがつて、高性能FRM用のプリフオーム
を効果的かつ再現性よく製造することができる。
According to the present invention, it is possible to manufacture a strong SiC whisker preform with a homogeneous structure and without cracking due to dry expansion, especially when using SiC whiskers with a low SiO 2 adhesion content. . Therefore, a preform for high performance FRM can be manufactured effectively and with good reproducibility.
Claims (1)
ち過処理し、形成された湿潤ウイスカーケーキ
をそのまま若しくは所定密度に圧縮して乾燥する
ことを特徴とするSiCウイスカープリフオームの
製造方法。 2 SiCウイスカーのSiO2付着含有率が0.5重量%
以下である特許請求の範囲第1項記載のSiCウイ
スカープリフオームの製造方法。 3 弱塩基水溶液がNH4OH水溶液である特許請
求の範囲第1項記載のSiCウイスカープリフオー
ムの製造方法。[Claims] 1. A method for producing a SiC whisker preform, which comprises dispersing SiC whiskers in a weak base aqueous solution and then over-treating the resulting wet whisker cake, and drying the formed wet whisker cake as it is or by compressing it to a predetermined density. . 2 SiO 2 adhesion content of SiC whiskers is 0.5% by weight
A method for manufacturing a SiC whisker preform as set forth in claim 1 below. 3. The method for producing a SiC whisker preform according to claim 1, wherein the weak base aqueous solution is an NH 4 OH aqueous solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61256943A JPS63111016A (en) | 1986-10-30 | 1986-10-30 | Method for manufacturing SiC whisker preform |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61256943A JPS63111016A (en) | 1986-10-30 | 1986-10-30 | Method for manufacturing SiC whisker preform |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63111016A JPS63111016A (en) | 1988-05-16 |
| JPH0360855B2 true JPH0360855B2 (en) | 1991-09-18 |
Family
ID=17299511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61256943A Granted JPS63111016A (en) | 1986-10-30 | 1986-10-30 | Method for manufacturing SiC whisker preform |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63111016A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5123935A (en) * | 1989-02-22 | 1992-06-23 | Kabushiki Kaisha Kobe Seiko Sho | Al2 o3 composites, process for producing them and throw-away tip made of al2 o3 composites |
-
1986
- 1986-10-30 JP JP61256943A patent/JPS63111016A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63111016A (en) | 1988-05-16 |
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