JPH0361545B2 - - Google Patents
Info
- Publication number
- JPH0361545B2 JPH0361545B2 JP59234793A JP23479384A JPH0361545B2 JP H0361545 B2 JPH0361545 B2 JP H0361545B2 JP 59234793 A JP59234793 A JP 59234793A JP 23479384 A JP23479384 A JP 23479384A JP H0361545 B2 JPH0361545 B2 JP H0361545B2
- Authority
- JP
- Japan
- Prior art keywords
- cap
- tic
- tip
- contact
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K9/00—Arc welding or cutting
- B23K9/12—Automatic feeding or moving of electrodes or work for spot or seam welding or cutting
- B23K9/122—Devices for guiding electrodes, e.g. guide tubes
- B23K9/123—Serving also as contacting devices supplying welding current to an electrode
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Arc Welding In General (AREA)
Description
〔産業上の利用分野〕
本発明はアーク溶接用トーチのコンタクトチツ
プの材質に関する。
〔発明の背景〕
アーク溶接用コンタクトチツプは溶接用トーチ
の先端に用いられ溶接ワイヤを保持する部分であ
る。従来存在していた金属製コンタクトチツプ
(第5図)は、溶接中に溶接金属が飛び散るスパ
ツタリングの現象によつてスパツタ(溶融金属)
が付着してしまい、溶接ワイヤを正確な位置に保
持することができなくなつてしまうものであつ
た。このため従来、金属製コンタクトチツプの表
面をセラミツクでコーテイングする技術が種々提
案されている。しかしこれらの技術には以下のよ
うに欠点が存在する。実願昭50−76021、実開
昭52−26630、実開昭57−160887。これらの技術
ではセラミツクがコーテイングの技術により被覆
されているにすぎず、膜厚が薄すぎて耐久性に欠
けるものであつた。実開昭57−82484、実開昭
59−49478。これらの技術ではセラミツクコーテ
イングではなくコンタクトチツプの外周自体をセ
ラミツクスで形成しており前記の欠点は除かれ
る。しかしながら単にセラミツクスで形成するの
みでは、アーク溶接時に発生する熱及びスパツタ
が付着するときの熱によつてセラミツクスに割れ
が生じてしまい実用にならないものであつた。
〔発明の目的〕
本発明は以上の問題点に鑑みて成されたもので
あり、溶接作業時に割れを生ずることのないセラ
ミツクス製のコンタクトチツプを提供することを
目的とする。
〔目的を達成するための手段〕
上記目的を達成するため、本発明は、アーク溶
接用のトーチに用いられる銅合金製コンタクトチ
ツプの先端部外周に、熱伝導度が0.03〔cal/cm・
sec・℃〕以上、熱膨張係数が7.3×10-6〔1/℃〕
未満の、SiC、Si3N4、BN、B4Cの中から選択さ
れた、少なくとも一種の非酸化物セラミツクスに
よつて形成されたキヤツプを取付け、このキヤツ
プの外周面に化学蒸着または物理蒸着によつて、
TiC、TiN、TiC+TiNの中から選択された、少
なくとも一種のチタン化合物を一層または複層形
成したことを特徴とする。
発明者はセラミツクス製のコンタクトチツプに
割れが生ずる原因は、アーク溶接時の熱及びスパ
ツタの付着時の熱によりセラミツクス製コンタク
トチツプが局所的に加熱され膨張することによつ
て生ずると考察した。従つて割れを防止するため
には多様の物理的性質を取り得るセラミツクスの
うち、熱伝導度及び熱膨張係数がいかなる範囲内
のセラミツクスを採用すればよいのか見つけ出せ
ばよいと考えた。そこで第1図に示すコンタクト
チツプを種々のセラミツクスによつて製作し、そ
れらのセラミツクス製のコンタクトチツプを用い
て溶接作業を行い、割れが生ずるか否かの実験を
行つた。この実験結果を表1に示す。
[Industrial Application Field] The present invention relates to a material for a contact tip of an arc welding torch. [Background of the Invention] An arc welding contact tip is a part used at the tip of a welding torch to hold a welding wire. Conventionally existing metal contact tips (Fig. 5) do not produce spatter (molten metal) due to the sputtering phenomenon in which weld metal scatters during welding.
This caused the welding wire to adhere to the welding wire, making it impossible to hold the welding wire in an accurate position. For this reason, various techniques have been proposed to coat the surface of a metal contact chip with ceramic. However, these techniques have the following drawbacks. Utility patent application Sho 50-76021, Utility patent application Sho 52-26630, Utility patent application Sho 57-160887. In these techniques, the ceramic is merely coated with a coating technique, and the film thickness is too thin, resulting in a lack of durability. Jitsukaisho 57-82484, Jitsukaisaki
59−49478. In these techniques, the outer periphery of the contact chip itself is formed of ceramic rather than ceramic coating, and the above-mentioned drawbacks are eliminated. However, simply forming it from ceramics would not be practical because the ceramic would crack due to the heat generated during arc welding and the heat from adhesion of spatter. [Object of the Invention] The present invention has been made in view of the above problems, and an object of the present invention is to provide a contact tip made of ceramics that does not crack during welding work. [Means for achieving the object] In order to achieve the above object, the present invention provides a thermal conductivity of 0.03 [cal/cm.
sec・℃] or more, the thermal expansion coefficient is 7.3×10 -6 [1/℃]
A cap made of at least one non-oxide ceramic selected from SiC, Si 3 N 4 , BN, B 4 C is attached, and the outer peripheral surface of the cap is coated with chemical vapor deposition or physical vapor deposition. According to
It is characterized by forming a single layer or multiple layers of at least one type of titanium compound selected from TiC, TiN, and TiC+TiN. The inventor considered that the cause of cracks in ceramic contact tips is that the ceramic contact tips are locally heated and expanded by the heat during arc welding and the heat when spatter is attached. Therefore, in order to prevent cracking, we thought it would be a good idea to find out what range of thermal conductivity and coefficient of thermal expansion should be used among ceramics that can have a variety of physical properties. Therefore, the contact chips shown in FIG. 1 were manufactured from various ceramics, and experiments were conducted to determine whether or not cracks would occur by welding using these ceramic contact chips. The results of this experiment are shown in Table 1.
【表】【table】
本発明の一実施例を第2図において説明する。
この実施例のコンタクトチツプは前記実験におい
て使用した第1図のコンタクトチツプにおいて、
コンタクトチツプの外周面にチタン化合物である
TiCを化学蒸着してコーテイングを行つたもので
ある。コンタクトチツプ本体1は基部に設けられ
たねじ部2により図示しないヘツドアダプタの先
端に螺合される。中央には図示しない溶接ワイヤ
を通すための孔3が形成される。先端部外周には
本実施例に係るコンタクトチツプのキヤツプ4が
設けられている。このキヤツプ4は内周に設けら
れたねじ部5によりコンタクトチツプ本体1の先
端外周に螺合されるものである。キヤツプ4は
SiCセラミツクスから形成され、外周面にTiC層
6が化学蒸着されている。これにより更に耐熱、
耐摩耗性が向上するのみならず溶接スパツタの付
着を更に抑制することができる。その理由はTiC
コーテイングにより、表面硬度は3300〜4000
(VHN)と硬くなり、また化学蒸着により表面
粗さ1μRZ以下とすることができ、従つて飛び散
つた溶融金属であるスパツタがコンタクトチツプ
表面に噛み込んで付着するのを防止できるからで
ある。更には一旦付着したスパツタを金属ブラシ
等で取り除いた後にも、前記高い硬度から耐摩耗
性を有するために、表面に傷が付かず表面粗さの
小さい平滑面を維持できセラミツクス製コンタク
トチツプとしての寿命を更に延ばすことができ
る。
〔他の実施例〕
以上の実施例のキヤツプ4はコンタクトチツプ
本体1の先端外周の長い部分に設けられるもので
あつたが、他の実施例においては第3図〜第4図
に示すようにコンタクトチツプ本体1の先端部に
おける短い部分に設けることもできる。この場合
においても第4図のように外表面にチタン化合物
のコーテイングをすることもできる。なお第一実
施例においてはキヤツプ4はねじ部5によつてコ
ンタクトチツプ本体1に設けられていたが、他の
実施例においては無機接着剤(例えばアロンセラ
ミツクスD東亜合成化学製)で接着することも可
能である。第3図のキヤツプ4はこの無機接着剤
7により接着したものである。
以上の実施例では、キヤツプの材料をSiCとし
て説明したが、本発明はそれに限定されるもので
はなく、キヤツプの材料を、熱伝導度が0.03
〔cal/cm・sec・℃〕以上、熱膨張係数が7.3×
10-6〔1/℃〕未満の性質を示す、SiC、Si3N4の
他、同様に六方晶系であつて共有結合的性質を有
し、熱伝導率0.036〜0.069〔cal/cm・sec・℃〕、
熱膨張係数0.5〜1.7×10-6〔1/℃〕のBN、熱伝
導率0.03〜0.3〔cal/cm・sec・℃〕、熱膨張係数
4.5×10-6〔1/℃〕のB4Cの中から選択された非
酸化物セラミツクスとすることができる。また、
前記各実施例では外周層の材料をTiCとしたが、
本発明はそれに限定されるものではなく、外周層
の材料をTiCと同じく等軸晶系であつてカタサ、
耐熱性等の性質も同様な、TiN、または両者の
混合物のTiC+TiNの中から選択された、少なく
とも一種のチタン化合物とし、さらにその蒸着方
法を、化学蒸着のみならず物理的蒸着とすること
も可能である。
〔発明の効果〕
本発明のアーク溶接用コンタクトチツプによれ
ば溶接作業時の割れを防止することができ、コン
タクトチツプの実用的なセラミツクス製キヤツプ
を提供することができる。
An embodiment of the present invention will be described with reference to FIG.
The contact chip of this example is the same as the contact chip of FIG. 1 used in the above experiment.
A titanium compound is used on the outer surface of the contact tip.
The coating is done by chemical vapor deposition of TiC. The contact tip body 1 is screwed into the tip of a head adapter (not shown) through a threaded portion 2 provided at the base. A hole 3 for passing a welding wire (not shown) is formed in the center. A cap 4 of the contact tip according to this embodiment is provided on the outer periphery of the tip. This cap 4 is screwed onto the outer periphery of the tip of the contact tip body 1 by means of a threaded portion 5 provided on the inner periphery. Cap 4 is
It is made of SiC ceramics, and a TiC layer 6 is chemically vapor deposited on the outer peripheral surface. This makes it even more heat resistant.
Not only the wear resistance is improved, but also the adhesion of welding spatter can be further suppressed. The reason is TiC
Depending on the coating, the surface hardness is 3300-4000
(VHN) and can be made to have a surface roughness of 1 μRZ or less by chemical vapor deposition, which prevents spatter, which is molten metal, from getting stuck on the surface of the contact chip. Furthermore, even after the spatter that has adhered to the chip is removed with a metal brush, the high hardness makes it wear-resistant, so the surface does not get scratched and maintains a smooth surface with low surface roughness, making it suitable for use as a ceramic contact chip. Lifespan can be further extended. [Other Embodiments] The cap 4 in the above embodiments was provided on the long outer circumference of the tip of the contact tip body 1, but in other embodiments it was provided as shown in FIGS. 3 and 4. It can also be provided in a short portion at the tip of the contact tip body 1. In this case as well, the outer surface may be coated with a titanium compound as shown in FIG. In the first embodiment, the cap 4 was attached to the contact chip body 1 by a threaded portion 5, but in other embodiments, it may be attached with an inorganic adhesive (for example, Aron Ceramics D manufactured by Toagosei Kagaku). is also possible. The cap 4 shown in FIG. 3 is bonded with this inorganic adhesive 7. In the above embodiments, the material of the cap is SiC, but the present invention is not limited thereto, and the material of the cap has a thermal conductivity of 0.03.
[cal/cm・sec・℃] or more, thermal expansion coefficient is 7.3×
In addition to SiC and Si 3 N 4 , which exhibit properties of less than 10 -6 [1/℃], they are also hexagonal and have covalent properties, and have a thermal conductivity of 0.036 to 0.069 [cal/cm・sec・℃〕,
BN with thermal expansion coefficient 0.5 to 1.7×10 -6 [1/℃], thermal conductivity 0.03 to 0.3 [cal/cm・sec・℃], thermal expansion coefficient
Non-oxide ceramics selected from B 4 C with a temperature of 4.5×10 -6 [1/°C] can be used. Also,
In each of the above examples, the material of the outer peripheral layer was TiC,
The present invention is not limited to this, but the material of the outer peripheral layer is an equiaxed crystal system like TiC,
At least one type of titanium compound selected from TiN or a mixture of the two, TiC+TiN, which has similar properties such as heat resistance, and can be deposited not only by chemical vapor deposition but also by physical vapor deposition. It is. [Effects of the Invention] According to the contact tip for arc welding of the present invention, cracking during welding work can be prevented, and a practical ceramic cap of the contact tip can be provided.
第1図〜第4図は本発明の実施例に係るコンタ
クトチツプの縦断面図、第5図は従来のコンタク
トチツプの縦断面図である。
1……コンタクトチツプ本体、2……ねじ部、
3……孔、4……キヤツプ、5……ねじ部、6…
…TiC層。
1 to 4 are longitudinal sectional views of a contact chip according to an embodiment of the present invention, and FIG. 5 is a longitudinal sectional view of a conventional contact chip. 1...Contact chip body, 2...Threaded part,
3...hole, 4...cap, 5...screw part, 6...
...TiC layer.
Claims (1)
コンタクトチツプの先端部外周に、熱伝導度が
0.03〔cal/cm・sec・℃〕以上、熱膨張係数が7.3
×10-6〔1/℃〕未満の、SiC、Si3N4、BN、
B4Cの中から選択された、少なくとも一種の非酸
化物セラミツクスによつて形成されたキヤツプを
取付け、このキヤツプの外周面に化学蒸着または
物理蒸着によつて、TiC、TiN、TiC+TiNの中
から選択された、少なくとも一種のチタン化合物
を一層または複層形成したことを特徴とするアー
ク溶接用コンタクトチツプ。[Claims] 1. The outer periphery of the tip of a copper alloy contact tip used in an arc welding torch has a thermal conductivity.
0.03 [cal/cm・sec・℃] or more, thermal expansion coefficient 7.3
SiC, Si 3 N 4 , BN, less than ×10 -6 [1/℃]
A cap formed of at least one type of non-oxide ceramic selected from B 4 C is attached, and a material selected from TiC, TiN, TiC+TiN is attached to the outer peripheral surface of the cap by chemical vapor deposition or physical vapor deposition. A contact tip for arc welding, characterized in that a single layer or multiple layers of at least one selected titanium compound are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59234793A JPS61115683A (en) | 1984-11-07 | 1984-11-07 | Contact tip for arc welding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59234793A JPS61115683A (en) | 1984-11-07 | 1984-11-07 | Contact tip for arc welding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61115683A JPS61115683A (en) | 1986-06-03 |
| JPH0361545B2 true JPH0361545B2 (en) | 1991-09-20 |
Family
ID=16976475
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59234793A Granted JPS61115683A (en) | 1984-11-07 | 1984-11-07 | Contact tip for arc welding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61115683A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0747475A (en) * | 1992-05-22 | 1995-02-21 | Nagamine Seisakusho:Kk | Contact chip of automatic welding machine |
| KR100449568B1 (en) * | 1995-10-03 | 2004-11-16 | 가부시키가이샤 에스엠케이 | Contact tip for welding |
| DE202007004012U1 (en) * | 2007-03-14 | 2007-08-16 | Cep Gmbh | Stream nozzle for welding torch, has stream nozzle tip, which is detachably connected with adapter piece via bolted connection, and boreholes designed with inserting bevels at side of torch, where nozzle is designed in two-piece |
| US8383987B2 (en) * | 2009-09-25 | 2013-02-26 | Illinois Tool Works Inc. | Welding contact tips for pulse applications |
| JP5817249B2 (en) * | 2011-06-24 | 2015-11-18 | 日産自動車株式会社 | Welding torch |
| KR101564689B1 (en) * | 2015-06-20 | 2015-11-04 | 정래식 | A GMA Welding Contact Tip having Metal Bushing |
| JP6540869B1 (en) | 2018-03-30 | 2019-07-10 | 千住金属工業株式会社 | Solder paste |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS511526U (en) * | 1974-06-24 | 1976-01-08 |
-
1984
- 1984-11-07 JP JP59234793A patent/JPS61115683A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61115683A (en) | 1986-06-03 |
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