JPH0362789B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to magnetron sputtering equipment used to form thin films on substrates.

[Conventional technology and its problems]

A magnetron sputtering device is used to efficiently form a thin film of target material on a substrate. FIG. 7 shows a conventional example of this, in which a magnetic pole 2a is placed on a yoke 1 made of a magnetic material. ，
2b and a central magnetic pole 3 are formed. In this example, these are made of permanent magnets and have a chevron-shaped cross section, but in reality, outer magnetic poles 2a and 2b are formed concentrically with the center magnetic pole 3. In other words, 2a and 2b are integrated. Center magnetic pole 3
The upper part is the north pole and the lower part is the south pole, and these two outer
The upper part of a and 2b is the south pole, and the lower part is the north pole. Therefore, lines of magnetic force H flow from the central magnetic pole 3 to the outer magnetic poles 2a, 2b as shown by arrows H. In this example, a case has been described in which the magnetic field generator is configured with permanent magnets, but it may also be configured with electromagnets. In this case, a coil is wound around the central magnetic pole N-S.
A target support plate 4 is disposed adjacent to the magnetic poles 2a, 2b, and 3, and a target 5 is supported on this. The lines of magnetic force H are magnetic poles 2a and 3, or 3 and 2a
Since the direction between the two points is approximately parallel to the surface of the target 5, the plasma is concentrated in this area. Therefore, the ions eject from this target at the hatched portions 5a and 5b, and therefore the levers are dominantly eroded (erosion). In other parts, as shown by the hatching, there is almost no erosion, and it cannot be said that this target is used effectively. In other words, its utilization efficiency is extremely low.

[Problem that the invention seeks to solve]

The present invention has been made in view of the above problems, and an object of the present invention is to provide a magnetron sputtering device with high target usage efficiency.

[Effect]

The strength of the parallel magnetic field is maximum at a position opposing a plurality of spaces or a particularly large portion of magnetic resistance. By providing a plurality of such regions or regions with particularly high magnetic resistance, the region with a strong parallel magnetic field is spread out, and the erosion of the target is thus made more uniform than in the past. In other words, it is possible to improve the target usage efficiency.

〔Example〕

DESCRIPTION OF THE PREFERRED EMBODIMENTS A magnetron sputtering apparatus according to an embodiment of the present invention will be described below with reference to FIGS. 1 to 6.

1 to 3 show a first embodiment of the present invention, parts corresponding to the conventional example in FIG. 7 are designated by the same reference numerals, and detailed explanation thereof will be omitted.

That is, the magnetic field generating device of this embodiment is composed of a permanent magnet, and its shape is concentric circles. and,
A target support plate 10 (so-called bucking plate) is provided with a slight gap between the magnetic poles 2a, 2b, and 3 of the permanent magnets. Similar to the conventional example, this material is made of a metal other than a magnetic material, such as copper. The target 5 is then supported on top of this. According to the present invention, a magnetic plate 11 having a shape as shown in FIG. 2 is embedded in the target support plate 10. That is, the magnetic plate 11 of this embodiment is formed concentrically and consists of a center portion 11a, an intermediate portion 11b concentric with the center portion, and an outer peripheral portion 11c concentric with the center portion 11a, with a gap 12a between them. , 12b are formed. The first embodiment of the present invention is constructed as described above, and its operation will be explained next. From the magnetic pole 3 of the permanent magnet, lines of magnetic force H' flow out, as shown by the arrows in FIG.
From there, it flows into the outer magnetic pole parts 2a and 2b via the outer peripheral part 11c. Then, it partially flows from the magnetic pole 3 to the outer magnetic poles 2a and 2b. That is, in the past, almost all the lines of magnetic force flowed directly from the central electrode 3 to the outer magnetic poles 2a and 2b, but according to this embodiment, the so-called short circuit of the lines of magnetic force as shown in the figure A path is formed. Therefore, if the perpendicular and parallel components of such lines of magnetic force are shown graphically, the result will be as shown in FIG. As is clear from this figure, the vertical component shows a maximum value at both ends of the target 5, and then rapidly decreases as it moves inward, until the vertical component reaches its maximum value at both ends of the target 5.
It becomes almost zero in the parts corresponding to a and 12b, and shows a maximum value in the center of target 5. Also, regarding the parallel components of magnetic field lines,
Between the center of target 5 and the end of target 5,
It shows almost uniform level. Comparing this with the conventional components shown in FIG. 4, it is found that in the conventional method, the parallel component was localized approximately in the middle between the center of the target and the end of the target, but this is different from that in this embodiment. According to the method, as shown in FIG. 3, the distribution is almost uniform. Further, in the conventional example, the vertical component also shows a maximum value at the center of the target and at the end of the target, but it becomes almost zero at the center of the target and the center of the end of the target.

According to this embodiment, since the magnetic field distribution as described above is shown, the erosion 13a, as shown in FIG.
13b is formed and the target 5 is uniformly eroded, so that its usage efficiency is much higher than in the past.

In the above embodiment, for example, the thickness of the magnetic plate 11 is set to 3
m/m, this is made of permalloy, and the distance is 1
If the width of targets 2a and 12b is 10 m/m, and the diameter of target 5 is 6 inches, the thickness is 6 mm, and it is made of chromium (Cr), the usage rate of target 5 is 55%. In the conventional example using the same material and size, the usage efficiency was 25%.

FIG. 5 shows a magnetic plate 2 which is a main part in a magnetron sputtering device according to a second embodiment of the present invention.
This shows the planar shape of 0. That is, in this example, whereas the permanent magnets of the above-mentioned examples were concentric, the target was rectangular, and the permanent magnet was also rectangular correspondingly.
As shown in FIG. 5, there is a central magnetic pole in the center facing the central part 23 of the magnetic plate 20, and a rectangular outer magnetic pole is located concentrically with the outer peripheral part 21 of the magnetic plate 20. They are configured to face each other. As described above, this magnetic plate 20 is composed of a central portion 23, an intermediate portion 22, and an outer circumferential portion 21, and voids 24 and 25 are formed between these portions. It is clear that the same effects as in the first embodiment can be obtained in this embodiment as well.

FIG. 6 shows a third embodiment of the present invention, and parts corresponding to the first embodiment are denoted by the same reference numerals, and detailed explanation thereof will be omitted.

According to this embodiment, a magnetic plate 31 is embedded in the target support plate 30 as in the first embodiment, and this has a concentric shape as in the first embodiment. The thickness of the center portion 32 and the outer peripheral portion 33 is made larger than the thickness of the intermediate portion 34 to further reduce the magnetic resistance. In this way, the magnetic resistance from the magnetic poles 3 toward 2a and 2b becomes smaller, the magnetic flux can be made stronger, and the effects described in the above embodiments can be achieved.

Although each embodiment of the present invention has been described above, the present invention is of course not limited to these, and various modifications can be made based on the technical idea of the present invention.

For example, in the above embodiment, the magnetic plates 11, 20,
Although two vacancies are formed at 30, the number may be further increased. That is, in the above embodiment, the magnetic plate has a divided structure, but the number of divisions may be further increased.

In addition, in the above embodiment, a plurality of air holes are provided on the magnetic plate.
However, instead of this, this portion may be made very thin. That is,
Even if this part is made to have a particularly large magnetic resistance, the effect will be smaller than in the case of an empty space, but the utilization efficiency can be improved compared to the conventional case. Alternatively, the empty portion may be filled with a material made of a non-magnetic material. That is, for example, each hollow part of a concentric divided magnetic material is filled with a concentric material made of a non-magnetic material to form a completely integrated object, and a target support plate is attached to the surface. You may also do so. Alternatively, such a magnetic material or a magnetic plate having a shape as shown in the embodiment may be interposed between the magnetic field generator and the target support plate.

Further, in the above embodiments, permalloy was used as the material of the magnetic plate, but other magnetic materials may be used, but materials with high magnetic permeability are preferred.

Further, in the above embodiments, a permanent magnet is used as the magnetic field generating device, but as mentioned at the beginning, an electromagnet may be used. Moreover, the shape of the magnet is not concentric, and even if the cross-sectional shape is E-shaped, the same effect can be obtained even if the magnetic poles facing on both sides of the central magnetic pole are independent magnetic poles. be.

〔Effect of the invention〕

As described above, according to the magnetron sputtering apparatus of the present invention, it is possible to further improve the efficiency of target utilization compared to the conventional method, thereby reducing production costs. Furthermore, the interval between target exchanges can be made longer than before.

[Brief explanation of drawings]

FIG. 1 is a partially sectional side view of a magtron sputtering device according to a first embodiment of the present invention, FIG. 2 is a plan view of the magnetic plate in FIG. 1, and FIG. 3 is a diagram for explaining the operation of the same embodiment. Graph, FIG. 4 is a graph showing the effect of the conventional example for comparison with the effect of the same embodiment, FIG. 5 is a plan view of the magnetic plate used in the magnetron sputtering device of the second embodiment of the present invention,
FIG. 6 is a partially sectional side view of a magnetron sputtering device according to a third embodiment of the present invention, and FIG. 7 is a partially sectional side view of a conventional magnetron sputtering device. In the figure, 11, 20, 31...magnetic materials.

Claims (1)

[Claims] 1. A magnetron sputtering device comprising a magnetic field generating device and a target adjacent thereto,
A plate-shaped magnetic member is interposed between the magnetic field generating device and the target, and a plurality of voids or parts with particularly high magnetic resistance are formed at a portion facing between the magnetic poles of the magnetic field generating device. A magnetron spatuta device that is characterized by: 2. The magnetron sputtering device according to item 1 above, wherein the magnetic member is attached to the support plate of the target.