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JPH0363175B2 - - Google Patents
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JPH0363175B2 - - Google Patents

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Publication number
JPH0363175B2
JPH0363175B2 JP58056558A JP5655883A JPH0363175B2 JP H0363175 B2 JPH0363175 B2 JP H0363175B2 JP 58056558 A JP58056558 A JP 58056558A JP 5655883 A JP5655883 A JP 5655883A JP H0363175 B2 JPH0363175 B2 JP H0363175B2
Authority
JP
Japan
Prior art keywords
lens
sample
electrostatic
electron
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58056558A
Other languages
Japanese (ja)
Other versions
JPS59181451A (en
Inventor
Kojin Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Denshi KK filed Critical Nihon Denshi KK
Priority to JP58056558A priority Critical patent/JPS59181451A/en
Publication of JPS59181451A publication Critical patent/JPS59181451A/en
Publication of JPH0363175B2 publication Critical patent/JPH0363175B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252Tubes for spot-analysing by electron or ion beams; Microanalysers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Tubes For Measurement (AREA)

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明はオージエ電子分析等に使用される電子
線エネルギー分析装置を備えた電子顕微鏡に関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electron microscope equipped with an electron beam energy analyzer used in Auger electron analysis and the like.

[従来技術] 従来のオージエ電子分析装置等においては、シ
リンドリカルミラー型エネルギーアナライザー
(CMA)に代表されるように、試料からの2次電
子線を電場の偏向作用を利用して、そのエネルギ
ーに応じて空間的に分離するタイプのエネルギー
アナライザーを使用するものか若しくは、例え
ば、2枚の磁極板間に磁界を形成し、この磁界に
よる偏向力の差を利用して電子のエネルギー分離
するものが殆どである。これらのタイプのエネル
ギーアナライザー内における2次電子線の軌道は
外乱磁場又は電場に影響されやすく、そのため対
物レンズ磁場中に試料を置いて電子線を照射する
最近の電子顕微鏡においては前記CMA等のエネ
ルギーアナライザーを組み込んでオージエ電子等
のエネルギー分析を行うことはできない。
[Prior art] Conventional Auger electron analyzers, such as cylindrical mirror energy analyzers (CMA), use the deflection effect of an electric field to deflect secondary electron beams from a sample, depending on their energy. Most of the energy analyzers use a type of energy analyzer that spatially separates electrons, or, for example, create a magnetic field between two magnetic pole plates and use the difference in deflection force caused by this magnetic field to separate the energy of electrons. It is. The trajectory of the secondary electron beam in these types of energy analyzers is easily affected by disturbance magnetic fields or electric fields, so in recent electron microscopes in which the sample is placed in the objective lens magnetic field and the electron beam is irradiated, the energy of the CMA, etc. It is not possible to incorporate an analyzer to perform energy analysis of Auger electrons, etc.

[発明の目的] 本発明は、磁界中に試料を置いて電子線を照射
する電子顕微鏡において、試料から放射される2
次電子線中のオージエ電子等のエネルギー分析を
CMAを使用しないで分析できる装置を提供する
ことを目的としている。
[Object of the invention] The present invention provides an electron microscope in which a sample is placed in a magnetic field and irradiated with an electron beam.
Energy analysis of Augier electrons, etc. in the electron beam
The purpose is to provide a device that can perform analysis without using CMA.

[発明の構成] そのため本発明は、電子銃と、レンズ磁界中に
置かれた試料と、前記電子銃と該試料との間に配
置された第1段の静電レンズ4と、前記電子銃と
該試料との間に配置された第2段の静電レンズ5
と、両静電レンズ4,5の間に配置された電子検
出手段と、Eを掃引電圧とするとき第1段の静電
レンズに−(E+△E)なる電圧を与えると共に
第2段の静電レンズに−Eなる電圧を与えるため
の掃引電源と、該両静電レンズ間に配置され両静
電レンズ間に停留する電子を捕捉して検出するた
めの電子検出手段と、前記電子銃と試料との間に
配置された補正用磁界型レンズ6と、前記電圧の
掃引に伴い前記両静電レンズを通過して試料に照
射される電子線の径が変化するのを補正するため
前記磁界型レンズに前記電圧の掃引に応じた励磁
電流を供給するための制御回路を備えることを特
徴としている。
[Structure of the Invention] Therefore, the present invention includes an electron gun, a sample placed in a lens magnetic field, a first stage electrostatic lens 4 disposed between the electron gun and the sample, and the electron gun. and the second stage electrostatic lens 5 disposed between the sample and the sample.
, an electron detection means arranged between both electrostatic lenses 4 and 5, a voltage of -(E+ΔE) is applied to the first stage electrostatic lens, and a voltage of -(E+ΔE) is applied to the second stage electrostatic lens, where E is the sweep voltage. a sweep power supply for applying a voltage of -E to the electrostatic lens; an electron detection means disposed between the two electrostatic lenses for capturing and detecting electrons staying between the two electrostatic lenses; and the electron gun. and a correction magnetic field type lens 6 disposed between the electrostatic lens 6 and the sample, and a correction magnetic field type lens 6 disposed between the electrostatic lens 6 and the sample, and a correction magnetic field type lens 6 disposed between the electrostatic lens 6 and the sample, and a correction magnetic field type lens 6 arranged between the electrostatic lens 6 and the sample. The present invention is characterized in that it includes a control circuit for supplying an excitation current to the magnetic field type lens in accordance with the voltage sweep.

[実施例] 以下図面を参照して本発明を詳細に説明する。[Example] The present invention will be described in detail below with reference to the drawings.

第1図は本考案の一実施例装置の構成略図であ
る。図中1は電子銃であり、2はたとえば
100KV〜200KVに加速された入射電子線である。
3は集束レンズで入射電子線2のプローブ径を最
適に縮小する。4及び5は本発明の要部であるエ
ネルギー分析用の静電レンズを示し、それぞれ4
a,4b,4c及び5a,5b,5cの3枚1組
で光軸に対称に配置されたリング状の電極から構
成されている。ここで、電極4a,4cには電源
P1より−(E+△E)(KV)の電圧が与えられて
おり、電極4bは接地電位に保たれている。又、
電極5a,5cにも電源P2から−E(KV)の電
圧が与えられており、電極5bは接地電位に保た
れている。6は静電レンズ4と5のレンズ作用を
変化させたとき、それに応じて入射電子線2のプ
ローブ径が試料面上で変化するのを防止するため
の磁界型のプローブ補正用レンズであり、該補正
用レンズには静電レンズ4と5による電場を大き
く乱さないように−Eの電位が与えられている。
7は静電レンズ4及び5の間に設けられた電子線
検出器であり、該電子線検出器7によつて低いエ
ネルギーをもつ電子が検出されその検出強度は図
示しない表示装置等に表示される。8は対物レン
ズ9の磁界中に置かれた試料であり、10は入射
電子線2が試料8に照射された場合に試料面より
放射する2次電子線である。尚、11は該補正用
レンズの電源であり、該電源11は制御回路12
によつて制御される。
FIG. 1 is a schematic diagram of an apparatus according to an embodiment of the present invention. In the figure, 1 is an electron gun, and 2 is, for example
This is an incident electron beam accelerated to 100KV to 200KV.
3 is a focusing lens that optimally reduces the probe diameter of the incident electron beam 2. 4 and 5 indicate electrostatic lenses for energy analysis which are the main parts of the present invention, and 4 and 5 respectively indicate electrostatic lenses for energy analysis, which are the main parts of the present invention.
It consists of a set of three ring-shaped electrodes, a, 4b, 4c and 5a, 5b, 5c, arranged symmetrically about the optical axis. Here, the electrodes 4a and 4c are connected to a power source.
A voltage of -(E+ΔE) (KV) is applied from P 1 , and the electrode 4b is maintained at the ground potential. or,
A voltage of -E (KV) is also applied to the electrodes 5a and 5c from the power source P2 , and the electrode 5b is maintained at the ground potential. 6 is a magnetic field type probe correction lens for preventing the probe diameter of the incident electron beam 2 from changing on the sample surface when the lens action of the electrostatic lenses 4 and 5 is changed; A potential of -E is applied to the correction lens so as not to greatly disturb the electric field generated by the electrostatic lenses 4 and 5.
Reference numeral 7 denotes an electron beam detector provided between the electrostatic lenses 4 and 5. Electrons with low energy are detected by the electron beam detector 7, and the detected intensity is displayed on a display device, etc. (not shown). Ru. 8 is a sample placed in the magnetic field of the objective lens 9, and 10 is a secondary electron beam emitted from the sample surface when the sample 8 is irradiated with the incident electron beam 2. Note that 11 is a power source for the correction lens, and the power source 11 is a control circuit 12.
controlled by.

以上の様に構成された装置において、電子銃1
より放射された入射電子線2は、たとえば100
(KV)に加速され集束レンズ3により集束され
る。集束レンズ3を通過する入射電子線2は、−
(E+△E)(KV)の負の電位が与えられた電極
4aによつて100−(E+△E)(KV)に減速さ
れるが、電極4bが接地電位に保持されているた
め、電極4aと4b間で加速され電極4bを通過
する時点では100(KV)で通過する。ここで、電
極4bを100(KV)で通過した入射電子線2は−
(E+△E)(KV)の負の電位が与えられた電極
4cによつて、再び100−(E+△E)(KV)に
減速されて電極4cを通過して静電レンズ5に向
う。ところで、静電レンズ4と静電レンズ5はレ
ンズ作用を持つためレンズ作用を変化させた場
合、試料8上における入射電子線2のプローブ径
が変化する場合がある。そのため、本実施例にお
いては静電レンズ4と静電レンズ5によつて作ら
れる合成レンズの主面に一致したレンズ主面を持
つ補正用レンズ6を設け、静電レンズ4と静電レ
ンズ5におけるレンズ作用の可変操作を連動して
その変化を打ち消す機能を持たせている。すなわ
ち、電源11の制御回路12には電源P1,P2
ら静電レンズ4,5に印加された電圧に応じた信
号が供給されており、該制御回路12は印加され
た電圧に応じた励磁電流を該補正用レンズに供給
する。一方、電極4cを100−(E+△E)(KV)
で通過した入射電子線2は−E(KV)の電位が
与えられた電極5aによつて100−E(KV)に加
速され、更に接地電位が与えられた電極5bによ
つて100(KV)迄加速される。しかし−E(KV)
の電位が与えられた電極5cによつて又、100−
E(KV)に減速されるが試料8が接地電位であ
るために入射電子線2は結果的には100(KV)で
試料8に入射する。このようにして、試料に入射
電子線2が照射されると、試料8表面から2次電
子線10が放射されるが、この2次電子線10に
はいろいろなエネルギーの値をもつ電子e-が存在
する。そのため第2図に示すように試料8から放
射した電子e-の一部でエネルギーE以下の電子e-
は−E電位が与えられた電極5cで反射され通過
することができない。又、電極5cを通過した一
定エネルギー−E(keV)以上の電子e-は接地電
位が与えられた電極5bで加速され。電極5aで
減速され試料から放出されたとき、エネルギーを
持つたまま電極5cから静電レンズ4の方向へ向
う。このとき補正用レンズ6によつて発散しよう
とする電子e-は静電レンズ4の中心に向う集束作
用を受ける。このようにして補正用レンズ6を通
過して静電レンズ4の外側電極4cの下面近傍に
まで到達した電子e-のうち、電極4cの電位−
(E+△E)(KV)よりも大きいエネルギーを有
するものは静電レンズ4を通過するが、それより
も小さいエネルギーをもつ電子e-は反射されて通
過することはできない。その結果、電極4cと補
正用レンズ6の間には試料で放射されたときのエ
ネルギーがE(keV)〜E+△E(keV)の範囲に
ある電子e-が停滞することになる。このようにし
て停滞した電子e-は、電子線検出器7の前方に形
成される極めて弱い捕集電場によつて電子線検出
器7の方向へ偏向されて検出される。そこで、こ
のEを掃引変化させて電子線検出器7の出力変化
を記録することにより、試料8から放射された電
子e-のエネルギースペクトルを得ることができ
る。
In the device configured as described above, the electron gun 1
For example, the incident electron beam 2 emitted from 100
(KV) and focused by the focusing lens 3. The incident electron beam 2 passing through the focusing lens 3 is -
The negative potential of (E+△E)(KV) is decelerated to 100-(E+△E)(KV) by the electrode 4a, but since the electrode 4b is held at the ground potential, the electrode It is accelerated between 4a and 4b and passes through electrode 4b at 100 (KV). Here, the incident electron beam 2 passing through the electrode 4b at 100 (KV) is -
It is decelerated again to 100-(E+ΔE)(KV) by the electrode 4c to which a negative potential of (E+ΔE)(KV) is applied, and passes through the electrode 4c toward the electrostatic lens 5. By the way, since the electrostatic lens 4 and the electrostatic lens 5 have a lens effect, when the lens effect is changed, the probe diameter of the incident electron beam 2 on the sample 8 may change. Therefore, in this embodiment, a correction lens 6 having a lens main surface that coincides with the main surface of the composite lens formed by the electrostatic lens 4 and the electrostatic lens 5 is provided, and the electrostatic lens 4 and the electrostatic lens 5 It has a function to cancel the change by interlocking the variable operation of the lens action. That is, the control circuit 12 of the power supply 11 is supplied with signals corresponding to the voltages applied to the electrostatic lenses 4 and 5 from the power supplies P 1 and P 2 , and the control circuit 12 receives signals according to the voltages applied to the electrostatic lenses 4 and 5. An excitation current is supplied to the correction lens. On the other hand, the electrode 4c is 100-(E+△E)(KV)
The incident electron beam 2 that has passed through is accelerated to 100-E (KV) by the electrode 5a given a potential of -E (KV), and further accelerated to 100-E (KV) by the electrode 5b given a ground potential. accelerated until. But −E(KV)
Also, by the electrode 5c given a potential of 100-
Although the electron beam 2 is decelerated to E (KV), since the sample 8 is at ground potential, the incident electron beam 2 ultimately enters the sample 8 at 100 (KV). When the sample is irradiated with the incident electron beam 2 in this way, a secondary electron beam 10 is emitted from the surface of the sample 8, and this secondary electron beam 10 contains electrons e - having various energy values. exists. Therefore, as shown in Figure 2, some of the electrons e - emitted from the sample 8 are electrons e - with energy less than E.
is reflected by the electrode 5c to which the −E potential is applied and cannot pass through. Further, electrons e - having a certain energy -E (keV) or more passing through the electrode 5c are accelerated at the electrode 5b to which the ground potential is applied. When it is decelerated by the electrode 5a and released from the sample, it heads toward the electrostatic lens 4 from the electrode 5c while retaining energy. At this time, the electrons e - which are about to be diverged by the correction lens 6 are focused toward the center of the electrostatic lens 4 . Among the electrons e - that have passed through the correction lens 6 and reached the vicinity of the lower surface of the outer electrode 4c of the electrostatic lens 4, the potential of the electrode 4c -
Electrons with energy greater than (E+ΔE)(KV) pass through the electrostatic lens 4, but electrons e - with energy smaller than that are reflected and cannot pass through. As a result, electrons e - whose energy is in the range of E (keV) to E+ΔE (keV) when radiated from the sample are stagnated between the electrode 4c and the correction lens 6. The electrons e - stagnated in this manner are deflected toward the electron beam detector 7 by an extremely weak collection electric field formed in front of the electron beam detector 7 and detected. Therefore, by sweepingly varying this E and recording changes in the output of the electron beam detector 7, the energy spectrum of the electrons e - emitted from the sample 8 can be obtained.

[効果] 以上のように本発明によれば、磁場中に試料が
配置されている場合でも、試料から放出されたオ
ージエ電子や2次電子等のエネルギー分析をこの
磁場の影響を受けずに行なうことができる。
[Effects] As described above, according to the present invention, even when a sample is placed in a magnetic field, energy analysis of Auger electrons, secondary electrons, etc. emitted from the sample can be performed without being affected by this magnetic field. be able to.

更に又、本発明に基づく電子顕微鏡は、電子銃
と試料との間に配置された補正用磁界型レンズ6
を備えると共に、前記電圧−Eの掃引に伴い前記
両静電レンズを通過して試料に照射される電子線
の径が変化するのを補正するためこの磁界型レン
ズに前記電圧の掃引に応じた励磁電流を供給する
ための制御回路を備えているため、前述のオージ
エ電子や2次電子のエネルギー分析を行なう場合
に、試料の分析領域を予め設定した所定の領域に
維持することができる。
Furthermore, the electron microscope based on the present invention includes a correction magnetic field type lens 6 disposed between the electron gun and the sample.
In addition, in order to correct the change in the diameter of the electron beam that passes through both the electrostatic lenses and irradiates the sample with the sweep of the voltage -E, the magnetic field type lens is provided with a magnetic field type lens that responds to the sweep of the voltage -E. Since it is equipped with a control circuit for supplying an excitation current, it is possible to maintain the analysis region of the sample within a predetermined region when performing the energy analysis of Auger electrons and secondary electrons described above.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例装置の概略構成図
で、第2図は本発明を説明するための図である。 1:電子銃、2:入射電子線、3:集束レン
ズ、4,5:静電レンズ、6:補正用レンズ、
7:電子線検出器、8:試料、9:対物レンズ、
10:2次電子線、11:補正レンズ用電源、1
2:制御回路。
FIG. 1 is a schematic diagram of an apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram for explaining the present invention. 1: Electron gun, 2: Incident electron beam, 3: Focusing lens, 4, 5: Electrostatic lens, 6: Correction lens,
7: Electron beam detector, 8: Sample, 9: Objective lens,
10: Secondary electron beam, 11: Power supply for correction lens, 1
2: Control circuit.

Claims (1)

【特許請求の範囲】 1 電子銃と、レンズ磁界中に置かれた試料と、
前記電子銃と該試料との間に配置された第1段の
静電レンズ4と、前記電子銃と該試料との間に配
置された第2段の静電レンズ5と、両静電レンズ
4,5の間に配置された電子検出手段と、Eを掃
引電圧とするとき第1段の静電レンズに−(E+
△E)なる電圧を与えると共に第2段の静電レン
ズに−Eなる電圧を与えるための掃引電源と、該
両静電レンズ間に配置され両静電レンズ間に停留
する電子を捕足して検出するための電子検出手段
と、前記電子銃と試料との間に配置された補正用
磁界型レンズ6と、前記電圧の掃引に伴い前記両
静電レンズを通過して試料に照射される電子線の
径が変化するのを補正するため前記磁界型レンズ
に前記電圧の掃引に応じた励磁電流を供給するた
めの制御回路を備えることを特徴とする電子線エ
ネルギー分析装置を備えた電子顕微鏡。 2 該各静電レンズ5,4は3枚のリング状電極
より成り、該各静電レンズの中央電極は接地電位
とされ、該各静電レンズの外側電極に所望の電圧
が印加される特許請求の範囲第1項記載の電子線
エネルギー分析装置を備えた電子顕微鏡。
[Claims] 1. An electron gun, a sample placed in a lens magnetic field,
a first-stage electrostatic lens 4 disposed between the electron gun and the sample; a second-stage electrostatic lens 5 disposed between the electron gun and the sample; and both electrostatic lenses. The electron detection means arranged between 4 and 5 and the electrostatic lens of the first stage when E is the sweep voltage -(E+
A sweep power source for applying a voltage of △E) and a voltage of -E to the second stage electrostatic lens, and a sweep power source for capturing electrons that are placed between both electrostatic lenses and staying between both electrostatic lenses. An electron detection means for detecting electrons, a correction magnetic field type lens 6 disposed between the electron gun and the sample, and electrons that pass through both the electrostatic lenses and irradiate the sample as the voltage is swept. 1. An electron microscope equipped with an electron beam energy analyzer, characterized in that the electron microscope is equipped with a control circuit for supplying an excitation current to the magnetic field type lens in accordance with the sweep of the voltage in order to correct changes in the diameter of the wire. 2. Each of the electrostatic lenses 5, 4 is composed of three ring-shaped electrodes, the center electrode of each electrostatic lens is at ground potential, and a desired voltage is applied to the outer electrode of each electrostatic lens. An electron microscope comprising the electron beam energy analyzer according to claim 1.
JP58056558A 1983-03-31 1983-03-31 Electron microscope fitted with electron beam energy analyzer Granted JPS59181451A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58056558A JPS59181451A (en) 1983-03-31 1983-03-31 Electron microscope fitted with electron beam energy analyzer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58056558A JPS59181451A (en) 1983-03-31 1983-03-31 Electron microscope fitted with electron beam energy analyzer

Publications (2)

Publication Number Publication Date
JPS59181451A JPS59181451A (en) 1984-10-15
JPH0363175B2 true JPH0363175B2 (en) 1991-09-30

Family

ID=13030441

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58056558A Granted JPS59181451A (en) 1983-03-31 1983-03-31 Electron microscope fitted with electron beam energy analyzer

Country Status (1)

Country Link
JP (1) JPS59181451A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5762016B2 (en) * 1974-05-17 1982-12-27 Nippon Electron Optics Lab

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Publication number Publication date
JPS59181451A (en) 1984-10-15

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