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JPH0364045B2 - - Google Patents
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JPH0364045B2 - - Google Patents

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Publication number
JPH0364045B2
JPH0364045B2 JP59241279A JP24127984A JPH0364045B2 JP H0364045 B2 JPH0364045 B2 JP H0364045B2 JP 59241279 A JP59241279 A JP 59241279A JP 24127984 A JP24127984 A JP 24127984A JP H0364045 B2 JPH0364045 B2 JP H0364045B2
Authority
JP
Japan
Prior art keywords
dye
liquid crystal
light
laser
guest
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59241279A
Other languages
Japanese (ja)
Other versions
JPS61118725A (en
Inventor
Hiroshi Nakatsu
Shinichi Hibino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59241279A priority Critical patent/JPS61118725A/en
Publication of JPS61118725A publication Critical patent/JPS61118725A/en
Publication of JPH0364045B2 publication Critical patent/JPH0364045B2/ja
Granted legal-status Critical Current

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  • Optical Recording Or Reproduction (AREA)
  • Liquid Crystal (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Description

【発明の詳細な説明】 <技術分野> この発明はゲスト−ホスト型液晶を用いた光デ
イスク等の書き換え可能媒体のレーザー発振によ
る光メモリ読み出し方式に関するものである。
DETAILED DESCRIPTION OF THE INVENTION <Technical Field> The present invention relates to an optical memory readout method using laser oscillation for a rewritable medium such as an optical disk using a guest-host type liquid crystal.

<従来技術> 光デイスク方式は、記録密度の点で大きな長所
をもつが、特にこの光デイスク方式の中で、書き
込み,読み出し,消去が簡単にしかも何回も繰り
返して出来るような方式が求められている。この
ような方式の一つとして、従来より第3図a,
b,c,dに示すように、液晶を用いた書き換え
可能媒体(光デイスク)を使用するものがある。
<Prior art> Optical disk systems have great advantages in terms of recording density, but in particular, there is a need for a system that allows writing, reading, and erasing to be performed easily and repeatedly over and over again. ing. As one such method, conventionally, Fig. 3a,
As shown in b, c, and d, some use a rewritable medium (optical disk) using liquid crystal.

以下、この方式を説明する。まず、第3図aに
示すように、スメクテイツク−ネマテイツク相転
移を持つホスト液晶1に2色性色素2を混入し、
これを透明電極3付の基板4と透明電極5付の基
板6との間に配置する。この液晶1は室温ではス
メクテイツク状態(水平配向)であるが、第3図
bに示すように、電源7につないだ電極3,5に
より電場をかけた状態で書き込み用レーザー光8
を照射すると、その熱的作用によりレーザー光8
の照射された部分はネマテイツク状態(垂直配
向)になり、電場の向きに配向される。すなわ
ち、書き込み用レーザー光8の照射された部分
(垂直状態)と照射されなかつた部分(水平状態)
とで色素2のレーザー光の吸収係数が異となり、
これにより情報の書き込みを行なう。次いで、こ
の情報を読み出すために、第3図cに示すよう
に、弱いレーザー光である読み出し用レーザー光
11を照射し、色素2の光吸収係数の差、すなわ
ち、色素2が水平配向か垂直配向かによる透過光
12,12,14の光強度を光検出器15により
検出して、情報の読み出しを行なう。次いで、第
3図dに示すように、この液晶1を加熱して記憶
情報を消去する。
This method will be explained below. First, as shown in FIG. 3a, a dichroic dye 2 is mixed into a host liquid crystal 1 having a smectic-nematic phase transition.
This is placed between a substrate 4 with a transparent electrode 3 and a substrate 6 with a transparent electrode 5. This liquid crystal 1 is in a smectic state (horizontal alignment) at room temperature, but as shown in FIG.
When irradiated with laser light 8 due to its thermal effect,
The irradiated part becomes nematic (vertically oriented) and oriented in the direction of the electric field. That is, the part irradiated with the writing laser beam 8 (vertical state) and the part not irradiated (horizontal state)
The laser light absorption coefficient of dye 2 differs between
This allows information to be written. Next, in order to read out this information, as shown in FIG. The light intensity of the transmitted light 12, 12, 14 depending on the orientation is detected by the photodetector 15, and information is read out. Next, as shown in FIG. 3d, the liquid crystal 1 is heated to erase the stored information.

このような液晶の相転移を利用した光メモリ方
式は、書き込み、読み出しの信頼性等の点で有利
な方式である。しかしながら、この光メモリ方式
は情報の読み出しの際、液晶,色素等が薄いため
に、色素2の吸光度合も小さく、したがつて、色
素2の吸収係数の差を読みとつて情報を読み出す
のは感度が悪いという原理的欠点を持ち、実用化
が困難であるという欠点がある。
The optical memory system that utilizes such phase transition of liquid crystal is an advantageous system in terms of reliability of writing and reading. However, when reading out information in this optical memory method, since the liquid crystal, dye, etc. are thin, the absorbance of dye 2 is also small, and therefore reading out information by reading the difference in the absorption coefficient of dye 2 is difficult. It has the principle disadvantage of poor performance, and has the disadvantage of being difficult to put into practical use.

<発明の目的> そこで、この発明の目的は、ゲスト−ホスト型
液晶を用いた書き換え可能媒体において、情報を
読み出す際に、感度を飛躍的に向上させることに
ある。
<Object of the Invention> Therefore, an object of the present invention is to dramatically improve the sensitivity when reading information in a rewritable medium using a guest-host type liquid crystal.

<発明の構成> 上記目的を達成するため、この発明は、スメク
テイツク−ネマテイツク相転移を持つゲスト−ホ
スト型液晶を用いた書き換え可能媒体において、
ゲストとしてレーザー発振する色素を用い、情報
の読み出しの際に、外部からレーザー光を照射し
て、上記液晶の配向方向の変化による吸収係数が
変化して発振しきい値が異なる色素をレーザー発
振させ、上記色素からのレーザー発振光の有無あ
るいは光強度を光検出器で検出して、情報の読み
出しを行なうことを特徴としている。
<Structure of the Invention> In order to achieve the above object, the present invention provides a rewritable medium using a guest-host type liquid crystal having a smectic-nematic phase transition.
A dye that emits laser light is used as a guest, and when reading information, external laser light is irradiated to cause the dye to emit laser light, which has a different oscillation threshold due to a change in absorption coefficient due to changes in the alignment direction of the liquid crystal. The present invention is characterized in that the presence or absence or light intensity of laser oscillation light from the dye is detected by a photodetector to read out information.

<実施例> 以下、この発明を図示の実施例により細に説明
する。
<Examples> The present invention will be described in detail below with reference to illustrated examples.

第1図aにおいて、21はスメクテイツク−ネ
マテイツク相転移をもつホスト液晶たとえばオク
チルシアノビフエニール、22は上記ホスト液晶
21に混入され、レーザー発振しやすい発光性の
高い色素たとえばシアニン系の有機色素である。
このシアニン系の有機色素は、たとえば光デイス
ク用の書き込み,読み出し用光源として広く用い
られているGaAlAs系半導体レーザー(波長780
〜830nm)を励起用光源として使う場合には、そ
の発振波長に吸収スペクトルのピークを持つため
最適である。
In FIG. 1a, 21 is a host liquid crystal having a smectic-nematic phase transition, such as octyl cyanobiphenyl, and 22 is a highly luminescent dye, such as a cyanine-based organic dye, which is mixed into the host liquid crystal 21 and easily causes laser oscillation. be.
This cyanine-based organic dye is used, for example, in a GaAlAs-based semiconductor laser (wavelength 780), which is widely used as a light source for writing and reading optical disks.
~830nm) as an excitation light source, it is optimal because the absorption spectrum has a peak at that oscillation wavelength.

また、23,25は基板24,26に夫々蒸着
した金属誘電体(たとえばアルミニウム)からな
る電極であつて、上記基板24,26間に封入さ
れた色素22がレーザー発振しやすいように反射
率が大きくなつている。
Further, 23 and 25 are electrodes made of a metal dielectric material (for example, aluminum) deposited on the substrates 24 and 26, respectively, and have a reflectance so that the dye 22 sealed between the substrates 24 and 26 can easily oscillate as a laser. It's getting bigger.

図示しないが、第3図bに示す従来例と同様
に、電極23,25で電場をかけた状態で書き込
み用レーザー光を外部より照射して、第1図aに
示すように液晶21をネマテイツク状態(垂直配
向)にして、電場の向きに配向し、情報の書き込
みを行なう。液晶が水平配向になつているか垂直
配向になつているかによつて、第1図bに示すよ
うに、色素22のレーザー光の吸収係数αが変化
し、吸収係数αは垂直配向されている部分で小さ
くなり、水平配向されている部分で大きくなる。
第1図aに示すよう読み出し用レーザー光11を
照射した状態でも、液晶21の配向状態は変わら
ず、色素22の第1図bに示す吸収係数の差は維
持されている。したがつて、この吸収係数αの相
異により、同じ色素22でも、垂直配向部の色素
22の方が水平配向部の色素22よりも読み出し
用レーザー光11に対して光励起されにくくな
り、第1図cに示すように、垂直配向部の色素2
2のレーザー発振するしきい値P ⊥が水平配向部
の色素22のレーザー発振するしきい値P より
も高くなる。したがつて、読み出し用レーザー光
11の光強度P0を、P <P0<P ⊥となるよう
に選定すると、第1図dに示すように、水平配向
部では色素22はレーザー発振して発光するが、
垂直配向部では色素22はレーザー発振せず、発
光しない。この垂直配向部と水平配向部、すなわ
ち2つの状態を、第1図aに示すように、色素2
2のレーザー発振光28を検出するフオトダイオ
ード等の光検出器15で検出して、2つの状態を
区別できる。このように、レーザー発振光28の
有無を光検出器15で検出して、記録部と無記録
部を区別して、情報の読み出しを行なうことがで
きる。
Although not shown, similar to the conventional example shown in FIG. 3b, writing laser light is irradiated from the outside while an electric field is applied to the electrodes 23 and 25, and the liquid crystal 21 is nematically irradiated as shown in FIG. 1a. state (vertical orientation), orient it in the direction of the electric field, and write information. As shown in Figure 1b, the absorption coefficient α of the laser beam of the dye 22 changes depending on whether the liquid crystal is aligned horizontally or vertically, and the absorption coefficient α changes depending on whether the liquid crystal is aligned horizontally or vertically. It becomes smaller in the horizontally oriented part and becomes larger in the horizontally oriented part.
Even when the reading laser beam 11 is irradiated as shown in FIG. 1a, the alignment state of the liquid crystal 21 does not change, and the difference in absorption coefficient of the dye 22 shown in FIG. 1b is maintained. Therefore, due to this difference in absorption coefficient α, even if the dye 22 is the same, the dye 22 in the vertically aligned portion is less likely to be photoexcited by the readout laser beam 11 than the dye 22 in the horizontally aligned portion, and the first As shown in figure c, dye 2 in the vertical alignment part
The threshold value P ⊥ for laser oscillation of dye 22 in the horizontally aligned portion becomes higher than the threshold value P 2 for laser oscillation of dye 22 in the horizontally aligned portion. Therefore, if the light intensity P 0 of the readout laser beam 11 is selected so that P < P 0 < P ⊥, the dye 22 oscillates as a laser in the horizontally aligned portion, as shown in FIG. 1d. Although it emits light,
In the vertically aligned portion, the dye 22 does not oscillate as a laser and does not emit light. As shown in FIG.
The two states can be distinguished by detecting the second laser oscillation light 28 with a photodetector 15 such as a photodiode. In this way, by detecting the presence or absence of the laser oscillation light 28 with the photodetector 15, it is possible to distinguish between recorded areas and non-recorded areas, and to read information.

このようなレーザー発振光の有無による方式
は、従来の読み出し光の透過光を検出して、吸収
係数の差を読み取る方式に比べて、感度が飛躍的
向上する。というのは、この発明の方式では、検
出するのはレーザー発振光28の発光強度である
ため、信号は零からの立ち上がりを検出するから
であり、光検出器15の感度を上げれば、検出信
号のS/Nレベルが上がるからである。
Such a method based on the presence or absence of laser oscillation light dramatically improves sensitivity compared to the conventional method of detecting the transmitted light of the readout light and reading the difference in absorption coefficient. This is because in the method of the present invention, what is detected is the emission intensity of the laser oscillation light 28, so the rise of the signal from zero is detected.If the sensitivity of the photodetector 15 is increased, the detection signal This is because the S/N level of the signal increases.

また、液晶の状態によつて発振波長も変化する
ので、光検出器15の前に第1図aに示すよう
に、特定の波長の光だけを通す二色性フイルター
29を取り付けて、情報の読み出し用を行なうこ
ともできる。この場合励起用の読み出し用レーザ
ー光11の出力P0は、しきい値P ,P ⊥に関
係なく、P0が大きい程S/N比が上がる。なお、
第2図は読み出し用レーザー光の出力と色素22
のレーザー光の出力との関係を示すグラフであ
る。
Furthermore, since the oscillation wavelength changes depending on the state of the liquid crystal, a dichroic filter 29 is installed in front of the photodetector 15, as shown in FIG. 1a, to pass only light of a specific wavelength. It can also be used for reading. In this case, the output P 0 of the excitation reading laser beam 11 has no relation to the threshold values P 1 and P ⊥, and the S/N ratio increases as P 0 becomes larger. In addition,
Figure 2 shows the output of the readout laser beam and the dye 22.
3 is a graph showing the relationship between the output power and the laser light output.

この発明の方式は、光デイスクメモリだけでな
く、デイスプレイ装置、並列処理する光計算機へ
の適用も可能である。
The method of the present invention can be applied not only to optical disk memories but also to display devices and optical computers that perform parallel processing.

<発明の効果> 以上より明らかなように、この発明の光メモリ
読み出し方式は、ゲスト−ホスト型液晶を用いた
書き換え可能媒体において、ゲストとしてレーザ
ー発振する色素を用い、上記色素からのレーザー
発振光の有無あるいは光強度によつて、情報を読
み出すようにしているので、従来の読み出し光の
透過光を検出して、色素の吸収係数の差を読み取
る方式に比べて、感度が飛躍的に高くなり、検出
信号のS/Nレベルが上がるという利点を有す
る。
<Effects of the Invention> As is clear from the above, the optical memory readout method of the present invention uses a dye that oscillates as a guest in a rewritable medium using a guest-host liquid crystal, and uses a dye that oscillates as a guest to emit laser oscillation light from the dye. Because information is read out based on the presence or absence of light or the intensity of light, the sensitivity is dramatically higher than the conventional method of detecting the transmitted light of the readout light and reading the difference in the absorption coefficient of the dye. This has the advantage that the S/N level of the detection signal increases.

【図面の簡単な説明】[Brief explanation of drawings]

第1図aはこの発明の一実施例の説明図、第1
図bは吸収係数の変化を示すグラフ、第1図cは
色素のレーザー発振しきい値の変化を示すグラ
フ、第1図dは色素のレーザー出力を示すグラ
フ、第2図は読み出し用レーザー光の出力と色素
のレーザー光の出力の関係を示すグラフ、第3図
a,b,c,dは従来の方式の説明図である。 1,21……液晶、2,22……色素、15…
…光検出器、3,5,23,25……電極、4,
6,24,26……基板。
Figure 1a is an explanatory diagram of one embodiment of the present invention;
Figure b is a graph showing changes in the absorption coefficient, Figure 1 c is a graph showing changes in the laser oscillation threshold of the dye, Figure 1 d is a graph showing the laser output of the dye, and Figure 2 is a graph showing the readout laser beam. Graphs showing the relationship between the output of the dye and the output of the dye laser beam, FIGS. 3a, b, c, and d are explanatory diagrams of the conventional system. 1,21...liquid crystal, 2,22...pigment, 15...
...Photodetector, 3,5,23,25...Electrode, 4,
6, 24, 26... board.

Claims (1)

【特許請求の範囲】[Claims] 1 スメクテイツク−ネマテイツク相転移を持つ
ゲスト−ホスト型液晶を用いた書き換え可能媒体
において、ゲストとしてレーザー発振する色素を
用い、情報の読み出しの際に、外部からレーザー
光を照射して、上記液晶の配向方向の変化による
吸収係数が変化して発振しきい値が異なる色素を
レーザー発振させ、上記色素からのレーザー発振
光の有無あるいは光強度を光検出器で検出して、
情報の読み出しを行なうことを特徴とするスメク
テイツクタイプのゲスト−ホスト型液晶を用いた
書き換え可能媒体のレーザー発振による光メモリ
読み出し方式。
1. In a rewritable medium using a guest-host type liquid crystal with a smectic-nematic phase transition, a dye that emits laser light is used as a guest, and when reading information, external laser light is irradiated to align the liquid crystal. A dye whose absorption coefficient changes due to a change in direction and has a different oscillation threshold is oscillated as a laser, and a photodetector detects the presence or absence of laser oscillation light from the dye or the light intensity.
An optical memory reading method using laser oscillation of a rewritable medium using a smectic type guest-host liquid crystal for reading information.
JP59241279A 1984-11-14 1984-11-14 Optical memory readout system by laser oscillation of rewritable medium using smectic guest-host type liquid crystal Granted JPS61118725A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59241279A JPS61118725A (en) 1984-11-14 1984-11-14 Optical memory readout system by laser oscillation of rewritable medium using smectic guest-host type liquid crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59241279A JPS61118725A (en) 1984-11-14 1984-11-14 Optical memory readout system by laser oscillation of rewritable medium using smectic guest-host type liquid crystal

Publications (2)

Publication Number Publication Date
JPS61118725A JPS61118725A (en) 1986-06-06
JPH0364045B2 true JPH0364045B2 (en) 1991-10-03

Family

ID=17071892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59241279A Granted JPS61118725A (en) 1984-11-14 1984-11-14 Optical memory readout system by laser oscillation of rewritable medium using smectic guest-host type liquid crystal

Country Status (1)

Country Link
JP (1) JPS61118725A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8608276D0 (en) * 1986-04-04 1986-05-08 British Telecomm Optical devices
US5319481A (en) * 1986-12-23 1994-06-07 Raychem Corporation Encapsulated liquid crystal optical read/write storage medium and system
DE69223183T2 (en) * 1991-06-10 1998-07-23 Sharp Kk Non-volatile memory device
US5444651A (en) * 1991-10-30 1995-08-22 Sharp Kabushiki Kaisha Non-volatile memory device

Also Published As

Publication number Publication date
JPS61118725A (en) 1986-06-06

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