JPH0365020B2 - - Google Patents
Info
- Publication number
- JPH0365020B2 JPH0365020B2 JP60212854A JP21285485A JPH0365020B2 JP H0365020 B2 JPH0365020 B2 JP H0365020B2 JP 60212854 A JP60212854 A JP 60212854A JP 21285485 A JP21285485 A JP 21285485A JP H0365020 B2 JPH0365020 B2 JP H0365020B2
- Authority
- JP
- Japan
- Prior art keywords
- side electrode
- diode
- pellet
- resin
- same shape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
- H10W72/07336—Soldering or alloying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/076—Connecting or disconnecting of strap connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/076—Connecting or disconnecting of strap connectors
- H10W72/07631—Techniques
- H10W72/07636—Soldering or alloying
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/076—Connecting or disconnecting of strap connectors
- H10W72/07651—Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/076—Connecting or disconnecting of strap connectors
- H10W72/07651—Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting
- H10W72/07653—Connecting or disconnecting of strap connectors characterised by changes in properties of the strap connectors during connecting changes in shapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
- H10W72/631—Shapes of strap connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
- H10W90/763—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between laterally-adjacent chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
- H10W90/766—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、樹脂封止型半導体装置に関する。
〔発明の技術的背景〕
従来、電源整流用等に使用されるブリツジ構造
の樹脂封止型半導体装置は、例えば第３図に示す
ような構造を有している。図中１はダイステージ
である。ダイステージ１のペレツトマウント部２
には、半田層３を介してダイオードペレツト４が
Ｎ側電極５を接触するようにして装着されてい
る。ダイオードペレツト４のＰ側電極６は、半田
層７を介してコネクター部８の所定領域に固着さ
れている。また、ダイステージ１の他方のペレツ
トマウント部９には、半田層１０を介して他のダ
イオードペレツト１１がＰ側電極１２を接触する
ようにして装着されている。ダイオードペレツト
１１のＮ側電極１３は、半田層１４を介してコネ
クター部８の所定領域に固着されている。
〔背景技術の問題点〕
このような樹脂封止型半導体装置２０の場合、
Ｎ側電極５，１３の方がＰ側電極６，１２よりも
小さい。このため熱サイクルテストや熱衝撃テス
ト等の際にダイステージ１、半田層３，１０，
７，１４、ダイオードペレツト４，１１、コネク
ター部８が異なる熱膨張差で形状変化を起こす
と、ダイオードペレツト４，１１に加わる応力の
バランスが崩れ、ダイオードペレツト４，１１の
中心部に向う横方向のクラツク１５が発生した
り、或はダイオードペレツト４，１１の垂直方向
にクラツク１６が発生する。また、ダイステージ
１及びコネクター部８は平坦な表面を有している
ため、半田マウントの際に流出した半田層１７が
あると、電圧を印加した場合洩れ電流が非常に大
きくなり、逆電圧阻止効力が低下する。この問題
を解消するためにダイステージ１とコネクター部
８との間隔を大きくすることが考えられるが、後
の工程でダイステージ１とコネクター部８間に介
在させる樹脂の量が多くなり、この封止樹脂の縮
みによつてダイオードペレツト４，１１にクラツ
クが発生する問題があつた。
〔発明の目的〕
本発明はペレツトのクラツク発生を防止し、か
つ、逆電圧阻止作用を高めると共に、耐湿性の向
上を図つた樹脂封止型半導体装置を提供すること
をその目的とするものである。
〔発明の概要〕
本発明は、ダイオードペレツトのＰ側電極とＮ
側電極を同一形状で相対応して形成し、これらの
電極に略同形状のエンボス突起部を半田層を介し
て接続させることにより、エンボス突起部を形成
したダイステージとコネクター部でダイオードペ
レツトを挾持すると共に、ダイオードペレツトの
側面部をエンキヤツプ樹脂で封止したことによ
り、ペレツトのクラツク発生を防止し、かつ、逆
電圧阻止作用を高めると共に、耐湿性の向上を図
つた樹脂封止型半導体装置である。
〔発明の実施例〕
以下、本発明の実施例について図面を参照して
説明する。第１図は本発明の一実施例の概略構成
を示す説明図である。図中３１は、ダイステージ
である。ダイステージ３１の夫々のペレツトマウ
ント部３３，３４には、装着するダイオードペレ
ツト３５，３６のＮ側電極３７，３８又はＰ側電
極３９，４０と略同形状のエンボス突起部４１，
４２が設けられている。ここで、夫々のダイオー
ドペレツト３５，３６のＮ側電極３７，３８とＰ
側電極３９，４０は同形状で、かつ相対応して形
成されている。これらのＮ側電極３７，３８或は
Ｐ側電極３９，４０のパターンとしては、例えば
第２図Ａに示すように正方形のもの４３でも良い
し、或は同図Ｂに示すように円形のもの４４とし
ても良い。これらの電極３７…４０は、例えば
Au、Ni、Ｖ等の金属を蒸着することにより容易
に形成することができる。一方のペレツトマウン
ト部３３には、エンボス突起部４１の半田層４５
を介してダイオードペレツト３５のＮ側電極３７
が装着されている。また、そのＰ側電極３９は、
半田層４６を介してコネクター部４７のエンボス
突起部４８に装着されている。このエンボス突起
部４８もＰ側電極３９と略同形状に形成されてい
る。ダイオードペレツト３５の周側面は、エンキ
ヤツプ樹脂層４９で封止されている。他方のペレ
ツトマウント部３４には、エンボス突起部４２に
半田層５０を介してダイオードペレツト３６のＰ
側電極４０が装着されている。また、そのＮ側電
極３８は、半田層５１を介してコネクター部４７
のエンボス突起部５２に装着されている。このエ
ンボス突起部５２もＮ側電極３８と略同形状に形
成されている。ダイオードペレツト３６の周側面
はエンキヤツプ樹脂層５３で封止されている。
このように構成された樹脂封止型半導体装置６
０によれば、Ｎ側電極３７，３８とＰ側電極３
９，４０、エンボス突起部４１，４２，４８，５
２の夫々が略同一形状にして相対応して設けられ
ているので、熱歪等による応力が発生してもダイ
オードペレツト３５，３６に均一に分散した状態
で伝達することができるので、ダイオードペレツ
ト３５，３６のクラツク発生を防止することがで
きる。
また、エンボス突起部４１，４２，４８，５２
が設けられるのでダイステージ３１とコネクター
部４７の間隔を大きくすることができる。その結
果、半田層４５，４６，５０，５１は、ぬれ性の
良い電極３７…４０部周辺領域にのみ形成され、
半田の流出を防止して洩れ電流を小さくし、逆電
圧阻止作用を高めることができる。しかも、ダイ
オードペレツト３５，３６の周辺部にはエンキヤ
ツプ樹脂層４９，５３が設けられているので、ダ
イステージ３１とコネクター部４７の間隔が大き
くなつても外部モールド樹脂の量を増大させるこ
となく、外部モールド樹脂の収縮によるダイオー
ドペレツト３５，３６のクラツク発生を防止する
ことができる。更に、エンキヤツプ樹脂層４９，
５３が設けられているので耐湿性を向上させるこ
とができる。
〔発明の効果〕
以上説明した如く、本発明に係る樹脂封止型半
導体装置によれば、ペレツトのクラツク発生を防
止し、かつ、逆電圧阻止作用を高めると共に耐湿
性を向上させることができるものである。 DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a resin-encapsulated semiconductor device. [Technical Background of the Invention] Conventionally, a bridge structure resin-sealed semiconductor device used for power rectification, etc. has a structure as shown in FIG. 3, for example. In the figure, 1 is a die stage. Pellet mount part 2 of die stage 1
A diode pellet 4 is attached to the N-side electrode 5 so as to be in contact with the N-side electrode 5 via the solder layer 3. The P-side electrode 6 of the diode pellet 4 is fixed to a predetermined area of the connector part 8 via a solder layer 7. Further, another diode pellet 11 is mounted on the other pellet mount portion 9 of the die stage 1 with a solder layer 10 interposed therebetween so as to contact the P-side electrode 12. The N-side electrode 13 of the diode pellet 11 is fixed to a predetermined area of the connector part 8 via a solder layer 14. [Problems with background technology] In the case of such a resin-sealed semiconductor device 20 ,
The N-side electrodes 5 and 13 are smaller than the P-side electrodes 6 and 12. Therefore, during thermal cycle tests, thermal shock tests, etc., die stage 1, solder layers 3, 10,
7, 14, when the diode pellets 4, 11 and the connector part 8 change their shapes due to different thermal expansion differences, the balance of stress applied to the diode pellets 4, 11 is lost, and the center of the diode pellets 4, 11 A crack 15 occurs in the opposite lateral direction, or a crack 16 occurs in the vertical direction of the diode pellets 4,11. In addition, since the die stage 1 and the connector part 8 have flat surfaces, if there is a solder layer 17 that leaks out during solder mounting, the leakage current will be extremely large when a voltage is applied, and reverse voltage will be prevented. Potency decreases. In order to solve this problem, it is possible to increase the distance between the die stage 1 and the connector part 8, but this will increase the amount of resin interposed between the die stage 1 and the connector part 8 in the later process, and the sealing There was a problem in that cracks occurred in the diode pellets 4 and 11 due to shrinkage of the sealing resin. [Object of the Invention] An object of the present invention is to provide a resin-sealed semiconductor device that prevents the occurrence of cracks in pellets, enhances the reverse voltage blocking effect, and improves moisture resistance. be. [Summary of the Invention] The present invention provides a diode pellet with a P-side electrode and an N-side electrode.
By forming side electrodes of the same shape and corresponding to each other and connecting embossed protrusions of approximately the same shape to these electrodes via a solder layer, a diode pellet can be formed between the die stage on which the embossed protrusions are formed and the connector part. This is a resin-sealed type that prevents cracking of the pellet by sandwiching the diode pellet and sealing the sides of the diode pellet with encapsulant resin, increases reverse voltage blocking effect, and improves moisture resistance. It is a semiconductor device. [Embodiments of the Invention] Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention. 31 in the figure is a die stage. Each of the pellet mounting parts 33 and 34 of the die stage 31 has an embossed protrusion 41 having approximately the same shape as the N-side electrodes 37 and 38 or the P-side electrodes 39 and 40 of the diode pellets 35 and 36 to be mounted.
42 are provided. Here, the N side electrodes 37 and 38 of the respective diode pellets 35 and 36 and the P
The side electrodes 39 and 40 have the same shape and are formed to correspond to each other. The pattern of these N-side electrodes 37, 38 or P-side electrodes 39, 40 may be, for example, a square pattern 43 as shown in FIG. 2A, or a circular pattern as shown in FIG. 2B. It may be set to 44. These electrodes 37...40 are, for example,
It can be easily formed by vapor depositing a metal such as Au, Ni, or V. One of the pellet mount portions 33 has a solder layer 45 of the embossed protrusion 41.
N-side electrode 37 of diode pellet 35 via
is installed. Moreover, the P side electrode 39 is
It is attached to the embossed protrusion 48 of the connector part 47 via the solder layer 46. This embossed protrusion 48 is also formed in substantially the same shape as the P-side electrode 39. The circumferential side of the diode pellet 35 is sealed with an encap resin layer 49. On the other pellet mount part 34, the P of the diode pellet 36 is attached to the embossed protrusion 42 through a solder layer 50.
A side electrode 40 is attached. Further, the N-side electrode 38 is connected to the connector portion 47 via the solder layer 51.
It is attached to the embossed protrusion 52 of. This embossed protrusion 52 is also formed in substantially the same shape as the N-side electrode 38. The circumferential side of the diode pellet 36 is sealed with an encap resin layer 53. Resin-sealed semiconductor device 6 configured in this way
According to 0, the N side electrodes 37, 38 and the P side electrode 3
9, 40, embossed projections 41, 42, 48, 5
2 are provided in substantially the same shape and correspond to each other, so even if stress due to thermal strain or the like occurs, it can be transmitted to the diode pellets 35, 36 in a uniformly dispersed state. Cracks in the pellets 35 and 36 can be prevented from occurring. In addition, the embossed protrusions 41, 42, 48, 52
, the distance between the die stage 31 and the connector portion 47 can be increased. As a result, the solder layers 45, 46, 50, 51 are formed only in the area around the electrodes 37...40 with good wettability.
It is possible to prevent solder from flowing out, reduce leakage current, and enhance reverse voltage blocking effect. Furthermore, since the encapsulant resin layers 49 and 53 are provided around the periphery of the diode pellets 35 and 36, even if the distance between the die stage 31 and the connector section 47 becomes large, the amount of external molding resin does not increase. This makes it possible to prevent cracks in the diode pellets 35 and 36 due to shrinkage of the external molding resin. Further, an encap resin layer 49,
53, moisture resistance can be improved. [Effects of the Invention] As explained above, according to the resin-sealed semiconductor device of the present invention, it is possible to prevent the occurrence of cracks in the pellet, enhance the reverse voltage blocking effect, and improve moisture resistance. It is.
第１図は本発明の一実施例の概略構成を示す説
明図、第２図Ａ，ＢはＰ側電極又はＮ側電極の形
状を示す説明図、第３図は従来の樹脂封止型半導
体装置の概略構成を示す説明図である。
３１……ダイステージ、３３，３４……ペレツ
トマウント部、３５，３６……ダイオードペレツ
ト、３７，３８……Ｎ側電極、３９，４０……Ｐ
側電極、４１，４２……エンボス突起部、４３…
…正方形の電極パターン、４４……円形の電極パ
ターン、４５，４６……半田層、４７……コネク
ター部、４８……エンボス突起部、４９……エン
キヤツプ樹脂層、５０，５１……半田層、５２…
…エンボス突起部、５３……エンキヤツプ樹脂
層、６０……樹脂封止型半導体装置。
FIG. 1 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention, FIGS. 2A and B are explanatory diagrams showing the shape of the P-side electrode or N-side electrode, and FIG. 3 is a conventional resin-sealed semiconductor. FIG. 2 is an explanatory diagram showing a schematic configuration of the device. 31... Die stage, 33, 34... Pellet mount section, 35, 36... Diode pellet, 37, 38... N side electrode, 39, 40... P
Side electrodes, 41, 42... Embossed projections, 43...
...Square electrode pattern, 44...Circular electrode pattern, 45, 46...Solder layer, 47...Connector part, 48...Embossed projection part, 49...Encap resin layer, 50, 51...Solder layer, 52...
... Embossed protrusion, 53 ... Encap resin layer, 60 ... Resin-sealed semiconductor device.
Claims (1)
された同一形状のＰ側電極及びＮ側電極を有する
ダイオードペレツトと、該Ｐ側電極又は該Ｎ側電
極にこれらと略同形状のエンボス突起部を半田層
を介して接続させたダイステージと、該Ｎ側電極
又は該Ｐ側電極にこれらと略同形状のエンボス突
起部を半田層を介して接続させたコネクター部
と、前記ダイオードペレツトの側面部を封止する
ようにして前記ダイステージと前記コネクター部
間に封着されたエンキヤツプ樹脂層とを具備する
ことを特徴とする樹脂封止型半導体装置。1. A diode pellet having a P-side electrode and an N-side electrode of the same shape formed correspondingly to the main surfaces of the P-side and N-side, and a diode pellet having approximately the same shape as these on the P-side electrode or the N-side electrode. a die stage in which embossed protrusions having the same shape are connected to each other via a solder layer; a connector portion in which embossed protrusions having substantially the same shape as these are connected to the N-side electrode or the P-side electrode via a solder layer; A resin-sealed semiconductor device comprising an encap resin layer sealed between the die stage and the connector portion so as to seal a side surface of the diode pellet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60212854A JPS6272147A (en) | 1985-09-26 | 1985-09-26 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60212854A JPS6272147A (en) | 1985-09-26 | 1985-09-26 | Resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6272147A JPS6272147A (en) | 1987-04-02 |
| JPH0365020B2 true JPH0365020B2 (en) | 1991-10-09 |
Family
ID=16629414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60212854A Granted JPS6272147A (en) | 1985-09-26 | 1985-09-26 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6272147A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5917245A (en) * | 1995-12-26 | 1999-06-29 | Mitsubishi Electric Corp. | Semiconductor device with brazing mount |
| JP2992873B2 (en) * | 1995-12-26 | 1999-12-20 | サンケン電気株式会社 | Semiconductor device |
| JP4491244B2 (en) | 2004-01-07 | 2010-06-30 | 三菱電機株式会社 | Power semiconductor device |
-
1985
- 1985-09-26 JP JP60212854A patent/JPS6272147A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6272147A (en) | 1987-04-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |