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JPH0367615B2 - - Google Patents
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JPH0367615B2 - - Google Patents

Info

Publication number
JPH0367615B2
JPH0367615B2 JP59203460A JP20346084A JPH0367615B2 JP H0367615 B2 JPH0367615 B2 JP H0367615B2 JP 59203460 A JP59203460 A JP 59203460A JP 20346084 A JP20346084 A JP 20346084A JP H0367615 B2 JPH0367615 B2 JP H0367615B2
Authority
JP
Japan
Prior art keywords
resin substrate
heating body
heating element
heating
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59203460A
Other languages
Japanese (ja)
Other versions
JPS6179626A (en
Inventor
Yoshifumi Uryu
Haruo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Petrochemical Co Ltd
Original Assignee
Idemitsu Petrochemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Petrochemical Co Ltd filed Critical Idemitsu Petrochemical Co Ltd
Priority to JP20346084A priority Critical patent/JPS6179626A/en
Publication of JPS6179626A publication Critical patent/JPS6179626A/en
Publication of JPH0367615B2 publication Critical patent/JPH0367615B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C71/00After-treatment of articles without altering their shape; Apparatus therefor
    • B29C71/02Thermal after-treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C71/00After-treatment of articles without altering their shape; Apparatus therefor
    • B29C71/02Thermal after-treatment
    • B29C2071/022Annealing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C53/00Shaping by bending, folding, twisting, straightening or flattening; Apparatus therefor
    • B29C53/16Straightening or flattening

Landscapes

  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、光デイスクの基板として成形された
樹脂基板を加熱処理して残留応力の除去等を行う
アニーリング装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an annealing apparatus that heat-treats a resin substrate molded as an optical disk substrate to remove residual stress and the like.

[背景技術とその問題点] 近年、光メモリーデイスクの基板としてポリカ
ーボネート樹脂基板の実用化が検討され、てい
る。光デイスクの透明な基板にはビーム光が照射
され、これにより溝による記憶信号の再生や記憶
信号の記録が行われるため、光デイスクの品質に
複屈折が大きく影響する。複屈折な基板内部の残
留応力によつて生じるため、成形された樹脂基板
から残留応力を除去することが必要とされる。
[Background Art and Problems Therein] In recent years, the practical use of polycarbonate resin substrates as substrates for optical memory disks has been studied. The transparent substrate of an optical disk is irradiated with a beam of light, which causes the grooves to reproduce and record stored signals, so birefringence greatly affects the quality of the optical disk. Since this is caused by residual stress within the birefringent substrate, it is necessary to remove the residual stress from the molded resin substrate.

また、光デイスクの高記録密度化を図るために
は、前記ビーム光の焦点制御を非常に厳しいもの
とするとともに樹脂基板の平面精度を高度化する
ことが必要で、樹脂基板の面振れを低減して高度
の平面精度を確保しなければならない。
In addition, in order to increase the recording density of optical disks, it is necessary to control the focus of the beam light very strictly and to improve the flatness accuracy of the resin substrate, thereby reducing surface wobbling of the resin substrate. A high level of planar accuracy must be ensured.

成形された樹脂基板の残応力の除去、平面精度
の矯正を行うためにアニーリング処理が行われる
が、従来のアニーリング法として熱プレス法と回
転法が知られている。前者は2枚の金型で樹脂基
板を挟み、熱と圧力を樹脂基板に与える方法であ
る。これによると樹脂基板に形成された記憶信号
用の案内溝が圧力によつて破壊されるおそれがあ
り、また金型との密着むらによるへこみが樹脂基
板に生じ易いという問題がある。後者は一定温度
下で樹脂基板を高速回転させる方法である。これ
によると樹脂基板の回転中心からの距離に従つて
遠心力が変化するため樹脂基板に作用する応力が
均一ではなく、平面精度の矯正に難点がある。
Annealing is performed to remove residual stress and correct flatness of a molded resin substrate, and conventional annealing methods include a hot press method and a rotation method. The former is a method in which a resin substrate is sandwiched between two molds and heat and pressure are applied to the resin substrate. According to this, there is a risk that the guide groove for the memory signal formed in the resin substrate may be destroyed by the pressure, and there is also a problem that dents are likely to occur in the resin substrate due to uneven contact with the mold. The latter is a method in which the resin substrate is rotated at high speed at a constant temperature. According to this method, since the centrifugal force changes according to the distance from the center of rotation of the resin substrate, the stress acting on the resin substrate is not uniform, and there is a problem in correcting the flatness accuracy.

[発明の目的] 本発明の目的は、樹脂基板の残留応力を低減で
き、且つこれを樹脂基板の平面精度の矯正、高度
化を達成しながら行え、光デイスクの高品質化、
高記録密度化に資する樹脂基板のアニーリング装
置を提供するところにある。
[Object of the Invention] An object of the present invention is to reduce the residual stress of a resin substrate, and to do so while correcting and improving the flatness accuracy of the resin substrate, and to improve the quality of optical disks.
An object of the present invention is to provide an annealing device for a resin substrate that contributes to high recording density.

[問題点を解決するための手段および作用] このため本発明の構成は、表面に光学記録用の
案内溝を有する樹脂基盤の裏面に対応した形状の
上面を有する加熱体と、この加熱体を支持しかつ
加熱体との間に加熱体の上面の周縁に連通する空
間を有する基台とを有し、前記空間を真空吸引し
て表面を上にして載置された樹脂基盤を前記加熱
体に吸着させることを特徴とする。
[Means and effects for solving the problems] Therefore, the configuration of the present invention includes a heating body having an upper surface having a shape corresponding to the back surface of a resin base having a guide groove for optical recording on the surface, and a base that supports the heating body and has a space communicating with the periphery of the upper surface of the heating body, the space is vacuum-suctioned, and the resin base placed with the surface facing up is placed on the heating body. It is characterized by being adsorbed to.

要するに本発明では、樹脂基板を加熱体で加熱
することにより残留応力を除去し、この除去を加
熱体に樹脂基板を吸着させながら行うようにし、
このため加熱体の平面精度により樹脂基板の平面
精度の改善を図ることができ、かつ加熱矯正を樹
脂基盤の裏面からとすることで表面の記録用案内
溝への影響を防止できるようになるとともに、前
記吸着によつて樹脂基板の熱収縮の防止をも図る
ことができ、かつ吸着を加熱体の周囲とすること
で案内溝のある記録領域への影響を回避できるよ
うになる。
In short, in the present invention, the residual stress is removed by heating the resin substrate with a heating body, and this removal is performed while the resin substrate is adsorbed to the heating body,
Therefore, the flatness accuracy of the resin substrate can be improved by the flatness accuracy of the heating body, and by heating and straightening from the back side of the resin base, it is possible to prevent the influence on the recording guide groove on the front side. The suction can also prevent thermal shrinkage of the resin substrate, and by applying suction around the heating body, it is possible to avoid the influence on the recording area where the guide groove is located.

[実施例] 第1図、第2図に本実施例に係る装置が示され
ている。第1図は半截平面図で、第2図は縦断面
図である。この装置によつてアニーリング処理さ
れる樹脂基板1は、熱可塑性のポリカーボネート
樹脂等を材料として一対の型による射出圧縮成形
法によつて成形されたもので、この成形時、型に
取付けたスタンパから記憶信号用の案内溝が転写
される。この転写による案内溝は樹脂基板1の一
方の面1Aに形成されている。
[Example] FIGS. 1 and 2 show an apparatus according to this example. FIG. 1 is a half-cut plan view, and FIG. 2 is a longitudinal sectional view. The resin substrate 1 to be annealed by this device is molded from thermoplastic polycarbonate resin or the like by injection compression molding using a pair of molds. Guide grooves for storage signals are transferred. A guide groove formed by this transfer is formed on one surface 1A of the resin substrate 1.

樹脂基板1が載置される加熱体2は樹脂基板1
の形状と対応して円板状に形成される。この加熱
体2の内部には熱媒体流通用の通孔3が穿設さ
れ、通孔3にシリコン、ビフエニル、フエニルエ
ーテル等の熱媒体が流通することにより加熱体2
は所定温度に昇温せしめられる。樹脂基板1の載
置面である加熱体2の上面2Aは高度に平面仕上
加工されており、このため、この上面2Aの平面
精度は高度化されている。
The heating body 2 on which the resin substrate 1 is placed is the resin substrate 1
It is formed into a disk shape corresponding to the shape of. A through hole 3 for heat medium circulation is bored inside the heating body 2, and a heat medium such as silicon, biphenyl, phenyl ether, etc. flows through the through hole 3, and the heating body 2
is heated to a predetermined temperature. The upper surface 2A of the heating body 2, which is the surface on which the resin substrate 1 is placed, is highly polished to a high degree of flatness, and therefore the flatness accuracy of the upper surface 2A is highly improved.

加熱体2を配置する基台4は盤状になつてお
り、底部4Aの端部に垂直な周側壁4Bが形成さ
れているため、基台4には上面が開口した凹部5
が設けられている。リング状をなす周側壁4Bに
は吸気孔6が貫通穿設され、この吸気孔6に真空
ポンプ等の吸気手段に連なる気通路7が接続され
る。基台4の凹部5の中央には同心円状に三段の
段部8A,8B,8Cが形成された第1の加熱体
支持部材8が配置され、また凹部5の外端部寄り
には第2の加熱体支持部材9が配置される。この
第2の加熱体支持部材9は第1図の通り基台4の
周側壁4Bに沿つて円周方向に複数個設けられ
る。
The base 4 on which the heating element 2 is placed is disk-shaped, and a vertical peripheral wall 4B is formed at the end of the bottom 4A, so that the base 4 has a recess 5 with an open top surface.
is provided. An air intake hole 6 is formed through the ring-shaped circumferential wall 4B, and an air passage 7 connected to an air intake means such as a vacuum pump is connected to the air intake hole 6. A first heating element support member 8 is arranged in the center of the recess 5 of the base 4 and has three concentric steps 8A, 8B, and 8C. Two heating body support members 9 are arranged. As shown in FIG. 1, a plurality of second heating element supporting members 9 are provided in the circumferential direction along the peripheral side wall 4B of the base 4.

加熱体2の中央に形成された中心孔2Bに第1
の加熱体支持部材8の中段部8Bが挿入されるこ
とにより、加熱体2の中央部分が下段部8Cの上
面8Dに載せられる。これとともに加熱体2の外
端部付近が第2の加熱体支持部材9の上面に載せ
られる。これにより、凹部5の内部において加熱
体2は2種類の加熱体支持部材8,9で支持され
ながら基台4に配置されることとなり、この配置
は加熱体2と基台4の底部4Aとの間に空間10
を設けて行われる。以上により凹部5の上面開口
部は加熱体2によつて閉塞されることとなるが、
第1の加熱体支持部材8の中段部8Bの外周面と
加熱体2の中心孔2Bとの間、及び基台4の周側
壁4Bの内周面と加熱体2の外周面との間に隙間
11,12が確保される。また、第1の加熱体支
持部材8の下段部8Cの上面8Dと加熱体2の下
面との間にも隙間13が設けられる。前記隙間1
1,12は加熱体2、基台4の周側壁4B、及び
第1の加熱体支持部材2の中段部8Bのそれぞれ
の径寸法を適宜に設定することにより設けられ、
隙間13は第1の加熱体支持部材8の下段部8C
の上面8Dに微小凹凸や微小溝等を形成すること
により設けられる。
A first hole 2B is formed in the center of the heating body 2.
By inserting the middle part 8B of the heating element support member 8, the center part of the heating element 2 is placed on the upper surface 8D of the lower part 8C. At the same time, the vicinity of the outer end of the heating element 2 is placed on the upper surface of the second heating element support member 9. As a result, the heating element 2 is placed on the base 4 inside the recess 5 while being supported by the two types of heating element support members 8 and 9, and this arrangement is such that the heating element 2 and the bottom 4A of the base 4 space between 10
This will be carried out with the following. As a result of the above, the upper opening of the recess 5 is closed by the heating body 2;
Between the outer peripheral surface of the middle part 8B of the first heating element support member 8 and the center hole 2B of the heating element 2, and between the inner peripheral surface of the peripheral side wall 4B of the base 4 and the outer peripheral surface of the heating element 2. Gaps 11 and 12 are ensured. Further, a gap 13 is also provided between the upper surface 8D of the lower stage portion 8C of the first heating element support member 8 and the lower surface of the heating element 2. Said gap 1
1 and 12 are provided by appropriately setting the respective diameter dimensions of the heating body 2, the peripheral side wall 4B of the base 4, and the middle part 8B of the first heating body support member 2,
The gap 13 is the lower part 8C of the first heating element support member 8.
This is provided by forming minute irregularities, minute grooves, etc. on the upper surface 8D.

樹脂基板1の中心孔1Bに第1の加熱体支持部
材8の上段部8Aが挿入され、樹脂基板1の外端
部が保持体4の周側壁4Bの上面に形成された平
坦段部4Cに載せられる。これにより樹脂基板1
は加熱体2に載置され、アニーリング処理の準備
が整う。尚、この加熱体2への樹脂基板1の載置
は、前記記憶信号用案内溝が形成された面1Aを
上向きにして行う。
The upper step 8A of the first heating element support member 8 is inserted into the center hole 1B of the resin substrate 1, and the outer end of the resin substrate 1 is inserted into the flat step 4C formed on the upper surface of the peripheral side wall 4B of the holder 4. It will be posted. As a result, the resin substrate 1
is placed on the heating body 2 and ready for annealing treatment. The resin substrate 1 is placed on the heating body 2 with the surface 1A on which the storage signal guide groove is formed facing upward.

前記吸気手段を駆動し、吸気孔6から前記空間
10の空気を排出する。この結果、空間10が真
空吸引されるとともに、前記隙間13、及び隙間
11,12を介して加熱体2の上面2A側に存在
する空気も吸引され、このため樹脂基板1が加熱
体2の上面2Aに吸着される。この後、加熱体2
の前記通孔3に熱媒体を流通させて加熱体2を昇
温させる。これにより樹脂基板1を加熱体2によ
り加熱する。樹脂基板1の材料がポリカーボネー
ト樹脂の場合、この加熱温度を140〜180℃とし、
加熱時間を30〜60分とする。この加熱処理によつ
て樹脂基板1の残留応力は低減される。
The air intake means is driven to exhaust air from the space 10 from the air intake hole 6. As a result, the space 10 is vacuum-suctioned, and the air present on the upper surface 2A side of the heating body 2 is also suctioned through the gap 13 and the gaps 11 and 12, so that the resin substrate 1 is moved to the top surface of the heating body 2. It is adsorbed by 2A. After this, heating element 2
A heating medium is caused to flow through the through holes 3 to raise the temperature of the heating body 2. Thereby, the resin substrate 1 is heated by the heating body 2. When the material of the resin substrate 1 is polycarbonate resin, the heating temperature is 140 to 180°C,
The heating time is 30 to 60 minutes. Residual stress in the resin substrate 1 is reduced by this heat treatment.

また、この加熱処理は加熱体2の上面2Aに樹
脂基板1が吸着されながら行われ、加熱体のこの
上面2Aは前述の通り高度の平面精度を備えた面
となつているため、樹脂基板1は上面2Aと略同
じの高度の平面精度に矯正されることになり、樹
脂基板1の面振れの発生、そりの発生が防止され
る。更に、樹脂基板1の加熱は前記吸着によつて
加熱体2に樹脂基板1が固定された状態で行われ
るため、加熱による樹脂基板1の熱収縮を極めて
小さなものに抑えることができる。
Further, this heat treatment is performed while the resin substrate 1 is adsorbed to the upper surface 2A of the heating body 2, and since this upper surface 2A of the heating body is a surface with a high degree of flatness accuracy as described above, the resin substrate 1 is corrected to approximately the same high degree of flatness accuracy as the upper surface 2A, and the occurrence of surface runout and warpage of the resin substrate 1 is prevented. Furthermore, since the resin substrate 1 is heated while the resin substrate 1 is fixed to the heating body 2 by the adsorption, thermal shrinkage of the resin substrate 1 due to heating can be suppressed to an extremely small level.

以上に加えて、樹脂基板1は記憶信号用の案内
溝が形成された面1Aを上向きにして加熱体2に
吸着され、この面1Aは加熱体2に接触しないた
め、案内溝が破壊されることはない。
In addition to the above, the resin substrate 1 is attracted to the heating body 2 with the surface 1A on which the storage signal guide groove is formed facing upward, and since this surface 1A does not come into contact with the heating body 2, the guide groove is destroyed. Never.

また、樹脂基盤1の吸着にあたつては、加熱体
2の周囲に形成される隙間11,12を通して行
われるため、加熱体2の上面2Aには吸引用の開
口等がなく、密着される樹脂基盤1の記録領域の
裏面には当該開口等による変形等が生じることも
なく、樹脂基盤1の記録領域には良好な光学特性
が得られることになる。
In addition, since the adsorption of the resin substrate 1 is carried out through the gaps 11 and 12 formed around the heating element 2, the upper surface 2A of the heating element 2 does not have any openings for suction, so that the resin substrate 1 is tightly attached. The rear surface of the recording area of the resin substrate 1 will not be deformed due to the opening or the like, and the recording area of the resin substrate 1 will have good optical characteristics.

以上の加熱処理後、加熱体2の通孔3における
熱媒体の流通を中止し、樹脂基板1を冷却させ
る。この冷却は自然冷却でもよく、或いは加熱体
2の通孔3に冷却媒体を流通させたり、加熱体2
から取外した樹脂基板1を冷却用の型に押当てた
り等する強制冷却でもよい。
After the above heat treatment, the flow of the heat medium through the through holes 3 of the heating body 2 is stopped, and the resin substrate 1 is cooled. This cooling may be done by natural cooling, or by circulating a cooling medium through the through holes 3 of the heating element 2, or by
Forced cooling may be performed, such as by pressing the resin substrate 1 removed from the mold against a cooling mold.

以上のようにしてアーニング処理された樹脂基
板は光デイスクの基板として使用される場合、残
留応力の低減によつて複屈折が1/6〜1/3に、例え
ば複屈折60nmが10〜20nmに減少しており、また
樹脂基板の熱収縮率は1.5%以下の極めて小さな
値に抑えられている。
When the resin substrate that has been arned as described above is used as a substrate for an optical disk, the birefringence will be reduced to 1/6 to 1/3 due to the reduction of residual stress, for example, birefringence of 60 nm will be reduced to 10 to 20 nm. In addition, the thermal shrinkage rate of the resin substrate is kept to an extremely small value of 1.5% or less.

本実施例の加熱体は内部の通孔に熱媒体を流通
させる熱流体方式によるものであつたが、内部に
電熱線を設けて電熱方式によるものでもよい。要
すれば載置された樹脂基板を加熱処理できるもの
であればよい。また、加熱体を基台に配置する構
造は本実施例のものに限定されず、任意な構造と
することができ、更に加熱体、基台の形状は任意
なものでよく、要すれば、加熱体が基台に配置さ
れ、加熱体と基台との間に真空吸引される空間が
できるものであればよい。
Although the heating body of this embodiment was of a thermal fluid type in which a heat medium was circulated through an internal through hole, it may be of an electric heating type by providing a heating wire inside. If necessary, any material that can heat-process the resin substrate placed thereon may be used. Further, the structure in which the heating body is arranged on the base is not limited to that of this embodiment, and can be any structure. Furthermore, the shape of the heating body and the base may be arbitrary, and if necessary, Any configuration may be used as long as the heating body is placed on the base and a space is created between the heating body and the base to be vacuumed.

[発明の効果] 本発明によれば、樹脂基板の残留応力が低減さ
れるため光デイスクの複屈折を減少でき、従つて
光デイスクの品質を向上でき、更に樹脂基板の平
面精度が矯正されこの平面精度が向上するため、
光デイスクの高記録密度化を実現することが可能
になる。
[Effects of the Invention] According to the present invention, the residual stress of the resin substrate is reduced, so the birefringence of the optical disk can be reduced, and the quality of the optical disk can therefore be improved. Because the plane accuracy is improved,
It becomes possible to realize high recording density of optical discs.

【図面の簡単な説明】[Brief explanation of drawings]

図面は一実施例を示し、第1図は装置の半截平
面図、第2図は装置の縦断面図である。 1…樹脂基板、1A…案内溝が形成された面、
2…加熱体、3…熱媒体の通孔、4…基台、6…
吸気孔、10…空間。
The drawings show one embodiment, and FIG. 1 is a half-sectional plan view of the device, and FIG. 2 is a longitudinal sectional view of the device. 1...Resin substrate, 1A...Surface on which guide grooves are formed,
2... Heating body, 3... Heat medium through hole, 4... Base, 6...
Intake hole, 10...space.

Claims (1)

【特許請求の範囲】[Claims] 1 表面に光学記録用の案内溝を有する樹脂基盤
の裏面に対応した形状の上面を有する加熱体と、
この加熱体を支持しかつ加熱体との間に加熱体の
上面の周縁に連通する空間を有する基台とを有
し、前記空間を真空吸引して表面を上にして載置
された樹脂基盤を前記加熱体に吸着させることを
特徴とする樹脂基盤のアニーリング装置。
1. A heating body having an upper surface having a shape corresponding to the back surface of a resin base having a guide groove for optical recording on the surface;
A resin base supporting the heating element and having a space between the heating element and the heating element that communicates with the periphery of the upper surface of the heating element, the space being vacuum-suctioned and placed with the surface facing up. A resin-based annealing device, characterized in that the heating element adsorbs .
JP20346084A 1984-09-28 1984-09-28 Annealing device of resin base plate Granted JPS6179626A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20346084A JPS6179626A (en) 1984-09-28 1984-09-28 Annealing device of resin base plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20346084A JPS6179626A (en) 1984-09-28 1984-09-28 Annealing device of resin base plate

Publications (2)

Publication Number Publication Date
JPS6179626A JPS6179626A (en) 1986-04-23
JPH0367615B2 true JPH0367615B2 (en) 1991-10-23

Family

ID=16474490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20346084A Granted JPS6179626A (en) 1984-09-28 1984-09-28 Annealing device of resin base plate

Country Status (1)

Country Link
JP (1) JPS6179626A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4840873A (en) * 1986-07-11 1989-06-20 Kuraray Co., Ltd. Production of optical recording medium
JP2647426B2 (en) * 1988-04-23 1997-08-27 日立マクセル株式会社 Optical information recording medium
JP2010194667A (en) * 2009-02-25 2010-09-09 Toray Ind Inc Apparatus and method for removing strain of resin plate
CN106739028B (en) * 2017-02-24 2022-11-22 宁夏共享机床辅机有限公司 Automatic heat treatment equipment for polylactide material die

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58199114A (en) * 1982-05-17 1983-11-19 Terufumi Machida Preparation of high strength thermoplastic resin
JPS595019A (en) * 1982-07-02 1984-01-11 Toppan Printing Co Ltd Manufacture of heat-resisting container

Also Published As

Publication number Publication date
JPS6179626A (en) 1986-04-23

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