JPH0371493B2 - - Google Patents
Info
- Publication number
- JPH0371493B2 JPH0371493B2 JP26447684A JP26447684A JPH0371493B2 JP H0371493 B2 JPH0371493 B2 JP H0371493B2 JP 26447684 A JP26447684 A JP 26447684A JP 26447684 A JP26447684 A JP 26447684A JP H0371493 B2 JPH0371493 B2 JP H0371493B2
- Authority
- JP
- Japan
- Prior art keywords
- zirconium
- less
- purity
- sponge
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 54
- 229910052726 zirconium Inorganic materials 0.000 claims description 53
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- DIZZIOFQEYSTPV-UHFFFAOYSA-N [I].CO Chemical compound [I].CO DIZZIOFQEYSTPV-UHFFFAOYSA-N 0.000 claims description 4
- 238000000746 purification Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 19
- 239000012535 impurity Substances 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- 238000007654 immersion Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- CGWDABYOHPEOAD-VIFPVBQESA-N (2r)-2-[(4-fluorophenoxy)methyl]oxirane Chemical compound C1=CC(F)=CC=C1OC[C@@H]1OC1 CGWDABYOHPEOAD-VIFPVBQESA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910001093 Zr alloy Inorganic materials 0.000 description 2
- 229910007926 ZrCl Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001805 chlorine compounds Chemical group 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- RCJVRSBWZCNNQT-UHFFFAOYSA-N dichloridooxygen Chemical compound ClOCl RCJVRSBWZCNNQT-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Manufacture And Refinement Of Metals (AREA)
Description
〔発明の利用分野〕
本発明は高純度ジルコニウムの製造方法に係
り、特に高純度ジルコニウムを得るのに好適な製
造方法に関するものである。
〔発明の背景〕
現在、原子炉用材料として使用されているジル
コニウムは、クロール法により製造されている。
クロール法によりジルコニウムを製造する工程
は、例えば、J.H.Schemelによる“ASTM
MANUAL ON ZIRCONIUM AND
HAFNIUM”のCha−pter4−Production
Techniquesに示してあるように、(1)原料である
ジルコンサンドZr(Hf)SiO4を一次塩化し、Zr
(Hf)Cl4を作る。(2)一次塩化物をオキシクロラ
イドZr(Hf)OCl4に変え、向流抽出によりジルコ
ニウムとハフニウムを分離する。(3)沈澱したジル
コニウムをばい焼、焼結した後、二次塩化し、二
次塩化物ZrCl4にする。(4)二次塩化物ZrCl4を昇華
させ、還元炉で還元して純ジルコニウムにする。
(5)還元剤として使用したマグネシウムを蒸留分離
した後、直径が数ミリメートルのジルコニウムス
ポンジに破砕する。
以上が原子炉用ジルコニウムスポンジの製造工
程であるが、以下にASTM B−352−
79GradeR60001に示してある化学組成規格を示
す。アルミニウム75ppm以下、ホウ素0.5ppm以
下、カドミニウム0.5ppm以下、炭素270ppm以
下、コバルト20ppm以下、クロム200ppm以下、
銅50ppm以下、鉄1500ppm以下、ハフニウム
100ppm以下、マグネシウム20ppm以下、マンガ
ン50ppm以下、モリブデン50ppm以下、ニツケル
70ppm以下、ケイ素120ppm以下、スズ50ppm以
下、タングステン100ppm以下、ウラン3.5ppm以
下、ニオブ100ppm以下、チタン50ppm以下、水
素25ppm以下、窒素80ppm以下となつている。
クロール法で製造されたジルコニウムは、現在
原子炉の燃料被覆管のジルコニウム合金材料とし
て使用されているが、最近になつて、例えば、特
開昭51−69795号公報に示してあるように、従来
のジルコニウム合金からなる被覆管の内側に純ジ
ルコニウムのライナを内張りしたジルコニウムラ
イナ管が燃料被覆管として提案されている。ジル
コニウムライナ管は、応力腐食割れを防止すると
いう本来の目的からみて、ライナの不純物が少な
いほど性能が高くなるとみなされている。ところ
で、クロール法で製造されたジルコニウムは、純
度が比較的高いものの、鉄、クロム、炭素、ケイ
素などの不純物元素の許容量が大きく、通常、ク
ロール法で製造されたジルコニウム中には、鉄が
500〜1200ppm、クロムが100〜200ppm、その他
の不純物元素は総量で1000〜1500ppm含まれてい
る。
さらに高純度なジルコニウムを得るためには、
従来よりジルコニウム・クリスタルバーの製法が
ある。これは、ヨウ化ジルコニウムの熱分解法
で、約400℃でジルコニウムとヨウ素を反応させ、
ヨウ化ジルコニウムを作り、1400℃で熱分解する
ことにより高純度のジルコニウムを得るものであ
る。しかし、これは製造法の特殊性から量産が不
可能であり、かつ、製造費が極めて高価である。
したがつて、クロール法で得られたジルコニウ
ムスポンジの不純物含有量を何らかの方法で低め
ることにより純度を高めることは、ジルコニウム
ライナ管の性能向上にとつて不可欠である。
〔発明の目的〕
本発明は上記に鑑みてなされたもので、その目
的とするところは、ジルコニウムスポンジ中に含
まれる不純物を除去して高純度のジルコニウムを
得ることができる高純度ジルコニウムの製造方法
を提供することにある。
〔発明の概要〕
本発明の特徴は、ジルコニウムスポンジをハロ
ゲンを含むアルコール溶液中に浸漬し、その後、
洗浄して真空加熱処理して結晶粒界中に存在する
多くの不純物元素を除去するようにした点にあ
る。
〔発明の実施例〕
以下本発明の製造方法の一実施例を第1図〜第
3図を用いて詳細に説明する。
ハロゲン元素としては、塩素、臭素、弗素、ヨ
ウ素などがあり、本発明では、ジルコニウムスポ
ンジをハロゲンを含むアルコール溶液中に浸漬す
ることにより、多結晶ジルコニウムの結晶粒間が
原子状ハロゲンにより侵食され、粒界脆化を起こ
すことに着目した。すなわち、ジルコニウム中の
多くの不純物元素は、結晶粒界に存在しているの
で、結晶粒界部を選択的に除去すれば、純粋なジ
ルコニウムが残存し、実質的に高純度のジルコニ
ウムが得られる。要するに、粒界の境界、粒界面
に存在する不純物の偏析層、介存物などが化学
的、物理的に除去され、高純度のジルコニウムと
なる。
不純物元素の中で、ジルコニウムに対して固溶
量の小さい元素は、鉄、クロム、炭素、ケイ素、
ニツケルなどである。これらは、クロール法で製
造されたジルコニウムスポンジ中には比較的多く
含有され、これらの含有量を低減させれば、大幅
な純度向上になる。
このように、除去すべき不純物元素がジルコニ
ウムに対して固溶量が小さいので、結晶粒界に多
く存在することにより、除去するのに好都合であ
る。
本発明の方法の中で、真空中で加熱する目的
は、粒界反応によつて生成されたハロゲン化物を
蒸発除去するためである。例えば、ジルコニウム
のヨウ化物(ZrI4)は、蒸気圧が高いため
(850Kで10-5Torr)、通常用いられている真空熱
処理で十分除去できる。
第1図は本発明における工程図である。1は原
料のジルコニウムスポンジ、2はそれのハロゲン
を含むアルコール溶液中への浸漬、3は浸漬後の
原料スポンジの洗浄、4は真空中加熱処理であ
り、高純度ジルコニウムの粉末を得る場合には、
5で破砕を施し、6で粉末を得る。
本発明では、原料にジルコニウムスポンジを用
いているので、浸漬時に溶液との粒界反応が効果
的に行われ、精製効果が大きい。また、本法で得
られたジルコニウムスポンジは、よりポーラスと
なり、破砕しやすいという特徴がある。
以上の方法で得られたジルコニウムは、通常の
溶解、鍛造、圧延等の工程を経て、原子炉用ジル
コニウム材料として用いることができる。
次に、具体的な実施例について説明する。
第1表に示すジルコニウム材を用い、まず、下
記条件で最適な浸漬時間を調べた。
溶液;メタノール−ヨウ素(1重量%)
浸漬時間;24,35,48,60,80,100,120,140,
160時間
温度;室温
真空中加熱処理;6×10-7Torrで600℃、3時間
以上の処理を施し、ジルコニウム材を破砕し、
破面を走査型電子顕微鏡で観察した。
[Field of Application of the Invention] The present invention relates to a method for producing high purity zirconium, and particularly to a production method suitable for obtaining high purity zirconium. [Background of the Invention] Zirconium currently used as a material for nuclear reactors is produced by the Kroll process.
The process of manufacturing zirconium by the Kroll method is, for example, “ASTM
MANUAL ON ZIRCONIUM AND
HAFNIUM”Chapter 4-Production
As shown in Techniques, (1) the raw material zircon sand Zr(Hf)SiO 4 is primary chlorinated, and Zr
Make (Hf) Cl4 . (2) Change the primary chloride to oxychloride Zr(Hf)OCl 4 and separate zirconium and hafnium by countercurrent extraction. (3) After the precipitated zirconium is roasted and sintered, it is subjected to secondary chlorination to form secondary chloride ZrCl 4 . (4) Sublimate the secondary chloride ZrCl 4 and reduce it in a reduction furnace to pure zirconium.
(5) After separating the magnesium used as a reducing agent by distillation, it is crushed into zirconium sponges with a diameter of several millimeters. The above is the manufacturing process of zirconium sponge for nuclear reactors, but below is ASTM B-352-
Shows the chemical composition standard shown in 79GradeR60001. Aluminum 75ppm or less, Boron 0.5ppm or less, Cadmium 0.5ppm or less, Carbon 270ppm or less, Cobalt 20ppm or less, Chromium 200ppm or less,
Copper 50ppm or less, iron 1500ppm or less, hafnium
100ppm or less, magnesium 20ppm or less, manganese 50ppm or less, molybdenum 50ppm or less, nickel
70ppm or less, silicon 120ppm or less, tin 50ppm or less, tungsten 100ppm or less, uranium 3.5ppm or less, niobium 100ppm or less, titanium 50ppm or less, hydrogen 25ppm or less, nitrogen 80ppm or less. Zirconium produced by the Kroll method is currently used as a zirconium alloy material for fuel cladding tubes in nuclear reactors, but recently, as shown in Japanese Patent Application Laid-Open No. 51-69795, A zirconium liner tube, in which a pure zirconium liner is lined inside a cladding tube made of a zirconium alloy, has been proposed as a fuel cladding tube. Zirconium liner tubes are considered to perform better with fewer impurities in the liner, given their original purpose of preventing stress corrosion cracking. By the way, although zirconium produced by the Kroll method has relatively high purity, it has a large tolerance for impurity elements such as iron, chromium, carbon, and silicon, and zirconium produced by the Kroll method usually contains iron.
It contains 500 to 1200 ppm, 100 to 200 ppm of chromium, and 1000 to 1500 ppm of other impurity elements in total. In order to obtain even higher purity zirconium,
There is a conventional method for manufacturing zirconium crystal bars. This is a thermal decomposition method of zirconium iodide, in which zirconium and iodine are reacted at approximately 400℃.
High purity zirconium is obtained by making zirconium iodide and thermally decomposing it at 1400℃. However, this method cannot be mass-produced due to the unique manufacturing method, and the manufacturing cost is extremely high. Therefore, it is essential to improve the performance of zirconium liner tubes by somehow lowering the impurity content of zirconium sponge obtained by the Kroll method to increase its purity. [Object of the Invention] The present invention has been made in view of the above, and its object is to provide a method for producing high-purity zirconium that can obtain high-purity zirconium by removing impurities contained in a zirconium sponge. Our goal is to provide the following. [Summary of the Invention] The feature of the present invention is that a zirconium sponge is immersed in an alcohol solution containing halogen, and then
The main feature is that many impurity elements present in the grain boundaries are removed by cleaning and vacuum heat treatment. [Embodiment of the Invention] An embodiment of the manufacturing method of the present invention will be described in detail below with reference to FIGS. 1 to 3. Halogen elements include chlorine, bromine, fluorine, iodine, etc. In the present invention, by immersing a zirconium sponge in an alcohol solution containing halogen, the spaces between the crystal grains of polycrystalline zirconium are eroded by atomic halogen. We focused on the cause of grain boundary embrittlement. In other words, many impurity elements in zirconium are present at grain boundaries, so if the grain boundaries are selectively removed, pure zirconium remains and zirconium of substantially high purity can be obtained. . In short, grain boundaries, impurity segregation layers, inclusions, etc. present at grain boundaries are chemically and physically removed, resulting in highly pure zirconium. Among the impurity elements, the elements that have a small amount of solid solution with respect to zirconium are iron, chromium, carbon, silicon,
Nickel, etc. These are contained in relatively large amounts in the zirconium sponge produced by the Kroll method, and reducing their content will significantly improve the purity. In this way, since the impurity element to be removed has a small solid solution amount with respect to zirconium, it is convenient to remove it by existing in large quantities at the grain boundaries. In the method of the present invention, the purpose of heating in vacuum is to evaporate and remove halides produced by grain boundary reactions. For example, zirconium iodide (ZrI 4 ) has a high vapor pressure (10 -5 Torr at 850K), so it can be removed sufficiently by commonly used vacuum heat treatment. FIG. 1 is a process diagram of the present invention. 1 is the raw material zirconium sponge, 2 is immersion in an alcohol solution containing halogen, 3 is cleaning of the raw material sponge after immersion, and 4 is heat treatment in vacuum. When obtaining high purity zirconium powder, ,
Crushing is performed in Step 5, and powder is obtained in Step 6. In the present invention, since zirconium sponge is used as a raw material, grain boundary reaction with the solution is effectively carried out during immersion, and the purification effect is large. Furthermore, the zirconium sponge obtained by this method is characterized by being more porous and easily crushed. The zirconium obtained by the above method can be used as a zirconium material for a nuclear reactor after undergoing ordinary steps such as melting, forging, and rolling. Next, specific examples will be described. Using the zirconium materials shown in Table 1, the optimum immersion time was first investigated under the following conditions. Solution: methanol-iodine (1% by weight) Soaking time: 24, 35, 48, 60, 80, 100, 120, 140,
Heat treatment in vacuum at room temperature for 160 hours; 600℃ at 6×10 -7 Torr for more than 3 hours to crush the zirconium material.
The fracture surface was observed using a scanning electron microscope.
【表】
注;単位は重量%
その結果、第2図に示すように、浸漬時間が
100時間以内では殆んど結晶粒内破面であるが、
120時間以上では、結晶粒界破面が現われ、不純
物元素Fe、Crの析出物はほぼ除去された平滑な
ジルコニウムの各結晶粒がみられた。
次に、第2表に示す不純物を含むジルコニウム
スポンジ7を第3図aに示すように、容器8内の
メタノール−ヨウ素(1重量%)溶液9に140時
間浸漬し、浸漬後、同図bに示すように、超音波
洗浄器10内の純水11中に浸漬後のジルコニウ
ムスポンジ7を移し、約2時間超音波洗浄した。
次に、真空中(1×10-7Torr)で600℃で3時間
加熱した。[Table] Note: Unit is weight%
As a result, as shown in Figure 2, the immersion time was
Within 100 hours, most of the fracture surfaces are intragrain fractures, but
After 120 hours or more, grain boundary fracture surfaces appeared, and smooth zirconium crystal grains with almost all precipitates of impurity elements Fe and Cr removed were observed. Next, the zirconium sponge 7 containing the impurities shown in Table 2 was immersed in a methanol-iodine (1% by weight) solution 9 in a container 8 for 140 hours as shown in FIG. As shown in the figure, the zirconium sponge 7 after immersion was transferred to pure water 11 in an ultrasonic cleaner 10 and ultrasonically cleaned for about 2 hours.
Next, it was heated at 600° C. for 3 hours in a vacuum (1×10 −7 Torr).
以上説明したように、本発明によれば、高価な
クリスタルバージルコニウムを使用しなくとも、
簡単な方法で高純度のジルコニウムを製造できる
という効果がある。
As explained above, according to the present invention, without using expensive crystal verzirconium,
This method has the effect of producing high-purity zirconium using a simple method.
第1図は本発明の高純度ジルコニウムの製造方
法の工程を示す図、第2図は本発明の工程におけ
る浸漬時間と粒界破面領域との関係を示す線図、
第3図は本発明の高純度ジルコニウムの製造方法
における浸漬法と洗浄法の説明図である。
7……ジルコニウムスポンジ、9……メタノー
ル−ヨウ素溶液、10……超音波洗浄器、11…
…洗浄液。
FIG. 1 is a diagram showing the steps of the method for producing high-purity zirconium of the present invention, FIG. 2 is a diagram showing the relationship between immersion time and grain boundary fracture surface area in the process of the present invention,
FIG. 3 is an explanatory diagram of the dipping method and the cleaning method in the method for producing high-purity zirconium of the present invention. 7... Zirconium sponge, 9... Methanol-iodine solution, 10... Ultrasonic cleaner, 11...
...Cleaning liquid.
Claims (1)
ウムスポンジをハロゲンを含むアルコール溶液中
に所定時間以上浸漬し、その後、洗浄して真空加
熱処理を行うことを特徴とする高純度ジルコニウ
ムの製造方法。 2 前記アルコール溶液はメタノールーヨウ素溶
液からなり、前記所定時間は120時間以上である
特許請求の範囲第1項記載の高純度ジルコニウム
の製造方法。[Claims] 1. A method for producing high-purity zirconium, characterized in that in the zirconium purification process, a zirconium sponge is immersed in an alcohol solution containing halogen for a predetermined period of time or more, and then washed and subjected to vacuum heat treatment. . 2. The method for producing high-purity zirconium according to claim 1, wherein the alcohol solution is a methanol-iodine solution, and the predetermined time is 120 hours or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26447684A JPS61143530A (en) | 1984-12-17 | 1984-12-17 | Manufacture of high purity zirconium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26447684A JPS61143530A (en) | 1984-12-17 | 1984-12-17 | Manufacture of high purity zirconium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61143530A JPS61143530A (en) | 1986-07-01 |
| JPH0371493B2 true JPH0371493B2 (en) | 1991-11-13 |
Family
ID=17403753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26447684A Granted JPS61143530A (en) | 1984-12-17 | 1984-12-17 | Manufacture of high purity zirconium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61143530A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4959158A (en) * | 1989-03-30 | 1990-09-25 | The United States Of America As Represented By The Unitd States Department Of Energy | Method for separating disparate components in a fluid stream |
| KR940008936B1 (en) * | 1990-02-15 | 1994-09-28 | 가부시끼가이샤 도시바 | Highly purified metal material and sputtering target using the same |
| CN102206762B (en) * | 2011-05-18 | 2013-09-04 | 南京佑天金属科技有限公司 | Crystal zirconium growth system with iodine doser |
| KR101412133B1 (en) * | 2012-03-29 | 2014-07-01 | 한전원자력연료 주식회사 | The Manufacturing Method of Zirconium Sponge Using Self-Propagating High Temperature Synthesis |
-
1984
- 1984-12-17 JP JP26447684A patent/JPS61143530A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61143530A (en) | 1986-07-01 |
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