JPH0372158B2 - - Google Patents
Info
- Publication number
- JPH0372158B2 JPH0372158B2 JP2050485A JP2050485A JPH0372158B2 JP H0372158 B2 JPH0372158 B2 JP H0372158B2 JP 2050485 A JP2050485 A JP 2050485A JP 2050485 A JP2050485 A JP 2050485A JP H0372158 B2 JPH0372158 B2 JP H0372158B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- energy beam
- selective
- workpiece
- jet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Electroplating Methods And Accessories (AREA)
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、選択的化学加工装置に関し、例え
ばレーザなどのエネルギービームを用いて選択め
つきや選択エツチングなどを行なうものに関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a selective chemical processing apparatus, and relates to an apparatus that performs selective plating, selective etching, etc. using an energy beam such as a laser.
第3図は従来の選択的電気めつき装置を示す構
成図である。(特許公報昭59−1797号公報に記載
されている。)
図において、1は化学溶液、例えば電解めつき
液2が満たされているめつき槽、3はめつき電
源、4は陽極、5は例えばレーザなどのエネルギ
ービーム、6はエネルギービーム発生器、7は陰
極で、例えばガラスや他の誘電体などの絶縁基板
8と、絶縁基板8の表面に付着した薄い金属層9
とで構成されている。
FIG. 3 is a block diagram showing a conventional selective electroplating apparatus. (Described in Japanese Patent Publication No. 1797-1987.) In the figure, 1 is a plating tank filled with a chemical solution, for example, an electrolytic plating solution 2, 3 is a plating power supply, 4 is an anode, and 5 is a An energy beam such as a laser, 6 an energy beam generator, 7 a cathode, an insulating substrate 8 such as glass or other dielectric, and a thin metal layer 9 attached to the surface of the insulating substrate 8
It is made up of.
このように構成された装置で、電解めつき液2
中で陰極7と陽極4を対向させ、めつき電源3よ
り電圧を印加する。この電圧の印加と同期してエ
ネルギービーム発生器6より適当な波長とエネル
ギー密度を有するエネルギービーム5を陰極7上
に照射する。陰極7ではエネルギービーム5が照
射される領域でエネルギーが吸収され、局所的な
加熱を生じ、めつき速度が、熱的な効果を受けな
い領域のバツクグラウンドのめつき速度よりも飛
躍的に増大するため、選択的な電気めつきが行な
われる。 With the device configured in this way, the electrolytic plating solution 2
Inside, the cathode 7 and the anode 4 are opposed to each other, and a voltage is applied from the plating power source 3. In synchronization with the application of this voltage, the energy beam generator 6 irradiates the cathode 7 with an energy beam 5 having an appropriate wavelength and energy density. In the cathode 7, energy is absorbed in the area irradiated with the energy beam 5, causing local heating, and the plating speed increases dramatically compared to the background plating speed in the area that is not affected by the thermal effect. For this purpose, selective electroplating is carried out.
上記のような従来の選択的電気めつき装置で
は、エネルギービームの加熱による陰極の熱拡散
を制限し、隣接領域のバツクグラウンドめつきを
最小に押さえるためには、陰極が上記のような絶
縁基板上に薄い金属皮膜を付着させて構成しなけ
ればならなかつた。このため任意の陰極材料を用
いることができないという問題点があつた。
In conventional selective electroplating equipment such as the one described above, in order to limit thermal diffusion of the cathode due to energy beam heating and to minimize background plating in adjacent areas, the cathode must be placed on an insulating substrate such as the one described above. It had to be constructed by depositing a thin metal film on top. For this reason, there was a problem that an arbitrary cathode material could not be used.
この発明は、かかる問題点を解決するためにな
されたもので、任意の導電性又は非導電性の陰極
材料に選択めつきや選択エツチングなどを施すこ
とのできる選択的化学加工装置を提供することを
目的としている。 The present invention was made in order to solve these problems, and it is an object of the present invention to provide a selective chemical processing apparatus that can perform selective plating, selective etching, etc. on any conductive or non-conductive cathode material. It is an object.
この発明に係る選択的化学加工装置は、化学溶
液中に浸漬された被加工材、この被加工材の被加
工部にエネルギービームを照射するエネルギービ
ーム発生器、上記被加工部の表面に沿つて化学溶
液を噴射する噴流ノズル、及びこの噴流ノズルに
化学溶液を供給するポンプを備えたものである。
The selective chemical processing apparatus according to the present invention includes a workpiece immersed in a chemical solution, an energy beam generator that irradiates an energy beam onto a processed portion of the workpiece, and a device that irradiates an energy beam along the surface of the processed portion. It is equipped with a jet nozzle that sprays a chemical solution, and a pump that supplies the chemical solution to the jet nozzle.
この発明における噴流ノズル及びポンプによつ
て、被加工材の被加工部の表面に化学溶液のジエ
ツト噴流が生じる。このジエツト噴流が界面温度
を定温に保つ働きをし、エネルギービームの加熱
に伴う化学溶液や被加工材の熱拡散を抑制し、選
択的化学加工の分解能を向上させる。
The jet nozzle and pump of the present invention generate a jet of chemical solution on the surface of the processed portion of the workpiece. This jet jet functions to maintain the interface temperature at a constant temperature, suppresses thermal diffusion of the chemical solution and workpiece material due to heating by the energy beam, and improves the resolution of selective chemical processing.
第1図はこの発明の一実施例を示す構成図であ
り、例えば選択的電気めつき装置を示す。図にお
いて、10は噴流ノズルで、被加工材である陰極
15の被加工部、例えば被めつき部の表面に沿つ
てめつき液2をジエツト噴流として噴射する。1
1は噴流ノズル10の角度を変えて任意の陰極1
5の表面個所にジエツト噴流を当てることができ
るようにされたノズル関節、12はめつき液循環
パイプ、13は噴流ノズル10に化学溶液を供給
するポンプで、例えば循環ポンプ、14はめつき
液温度管理装置である。また、矢印A及び矢印B
はめつき液の流れを示すもので、矢印Aではジエ
ツト噴流となつている。
FIG. 1 is a block diagram showing one embodiment of the present invention, and shows, for example, a selective electroplating apparatus. In the figure, reference numeral 10 denotes a jet nozzle that sprays the plating liquid 2 as a jet jet along the surface of a portion to be processed, for example, a portion to be plated, of a cathode 15, which is a material to be processed. 1
1 is an arbitrary cathode 1 by changing the angle of the jet nozzle 10.
5 is a nozzle joint capable of applying a jet jet to the surface area; 12 is a plating liquid circulation pipe; 13 is a pump for supplying a chemical solution to the jet nozzle 10; for example, a circulation pump; 14 is a plating liquid temperature control pipe; It is a device. Also, arrow A and arrow B
This shows the flow of the fitting liquid, and arrow A shows a jet jet.
上記のように構成された選択的化学加工装置に
おいては、エネルギービーム5を陰極15の被加
工部に照射して選択めつきを行なう際に、被加工
部の表面に沿つて矢印Aに示すジエツト噴流によ
つてめつき液2の流動を生じさせる。これによつ
て、エネルギービーム5の加熱に伴なう被めつき
部の周辺の温度上昇しためつき液2は強制的に排
除される。また、陰極15を構成する被加工材の
熱拡散によつて、陰極15におけるエネルギービ
ーム5の未照射部分の温度が上昇するのを抑制す
る。従つて選択めつきの分解能の低下を防止する
ことができ、陰極15として従来のように絶縁基
板上に薄い金属皮膜を付着した構成にする必要は
なく、任意の導電性材料に選択めつきを施すこと
ができる。 In the selective chemical processing apparatus configured as described above, when performing selective plating by irradiating the energy beam 5 onto the workpiece part of the cathode 15, the jet shown by arrow A is applied along the surface of the workpiece part. The plating liquid 2 is caused to flow by the jet stream. As a result, the tamping liquid 2 whose temperature has increased around the plated portion due to heating by the energy beam 5 is forcibly removed. Furthermore, thermal diffusion of the workpiece constituting the cathode 15 suppresses an increase in the temperature of the portion of the cathode 15 that is not irradiated with the energy beam 5 . Therefore, it is possible to prevent a decrease in the resolution of selective plating, and there is no need for the cathode 15 to have a structure in which a thin metal film is adhered to an insulating substrate as in the past, and selective plating can be applied to any conductive material. be able to.
なお、上記実施例では選択めつきを、電気めつ
き法によつて行なう場合を示したが、他の実施例
として無電解法による選択めつきを行なうことも
できる。第2図は無電解めつきを行なう場合の構
成図を示すもので、16は無電解めつきに適する
被加工材で、任意の導電性又は非導電性材料であ
り、17は無電解めつき液である。この無電解め
つき液17はめつき液温度管理装置14で全面め
つきが起こる温度よりも低い温度で、かつ被加工
材16のエネルギービーム5が照射され加熱が起
こる部分にのみめつきが生じる程度の温度に制御
されている。このように構成された選択的無電解
めつき装置においても、エネルギービーム5を照
射する際に、噴流ノズル10とポンプ13によつ
て矢印Aに示すように無電解めつき液17のジエ
ツト噴流を生じさせれば、上記実施例と同様の効
果が得られる。 In the above embodiment, the selective plating is performed by electroplating, but in other embodiments, selective plating can be performed by electroless method. Figure 2 shows a block diagram when electroless plating is performed, and 16 is a workpiece suitable for electroless plating, which is any conductive or non-conductive material, and 17 is a workpiece suitable for electroless plating. It is a liquid. This electroless plating liquid 17 is kept at a temperature lower than the temperature at which full-surface plating occurs in the plating liquid temperature control device 14, and to the extent that plating occurs in the portion of the workpiece 16 that is irradiated with the energy beam 5 and heated. temperature is controlled. In the selective electroless plating apparatus configured as described above, when irradiating the energy beam 5, the jet nozzle 10 and the pump 13 generate a jet jet of the electroless plating solution 17 as shown by the arrow A. If this occurs, the same effect as in the above embodiment can be obtained.
また、上記実施例では、めつき槽1内のめつき
液を循環させてジエツト噴流を生じさせているよ
うに構成しているが、外部の容器内のめつき液を
用いるように構成してもよい。 Further, in the above embodiment, the plating liquid in the plating tank 1 is circulated to generate a jet jet, but the plating liquid in the external container is used. Good too.
(また、エネルギービーム5としてレーザに限
らず、光ビームなどでもよい。)
さらに、上記実施例では、選択的に電解あるい
は化学めつきを行なう場合について述べたが、電
解あるいは化学めつき液の代りに電解あるいは化
学エツチング液を用いれば、被加工材に対して選
択的なエツチングを行なうことが可能である。 (Also, the energy beam 5 is not limited to a laser, but may be a light beam, etc.) Furthermore, in the above embodiment, the case where electrolytic or chemical plating is selectively performed is described, but instead of using electrolytic or chemical plating liquid, By using an electrolytic or chemical etching solution, it is possible to selectively etch the workpiece.
この発明は以上説明したとおり、化学溶液中に
浸漬された被加工材、この被加工材の被加工部に
エネルギービームを照射するエネルギービーム発
生器、被加工部の表面に沿つて化学溶液を噴射す
る噴流ノズル、及び噴流ノズルに化学溶液を供給
するポンプを備え、エネルギービーム照射時の化
学溶液及び被加工材の熱拡散を抑制し、選択めつ
き又は選択エツチングなどの選択的化学加工の分
解能の低下を防ぎ、このため、被加工材として任
意の材料を用いることが可能となるという効果が
ある。
As explained above, this invention consists of a workpiece immersed in a chemical solution, an energy beam generator that irradiates the workpiece with an energy beam, and a chemical solution that is sprayed along the surface of the workpiece. The jet nozzle is equipped with a pump that supplies a chemical solution to the jet nozzle, suppresses thermal diffusion of the chemical solution and the workpiece during energy beam irradiation, and improves the resolution of selective chemical processing such as selective plating or selective etching. This has the effect of preventing deterioration and thus making it possible to use any material as the workpiece.
第1図はこの発明の一実施例を示す選択的電気
めつき装置の構成図、第2図はこの発明の他の実
施例を示す選択的無電解めつき装置を示す構成
図、第3図は従来の選択的電気めつき装置を示す
構成図である。
2は化学溶液、5はエネルギービーム、6はエ
ネルギービーム発生器、10は噴流ノズル、13
はポンプ、15,16は被加工材、17は化学溶
液。、なお、図中、同一符号は同一、又は相当部
分を示す。
FIG. 1 is a block diagram of a selective electroplating apparatus showing one embodiment of the invention, FIG. 2 is a block diagram of a selective electroless plating apparatus showing another embodiment of the invention, and FIG. 1 is a configuration diagram showing a conventional selective electroplating device. 2 is a chemical solution, 5 is an energy beam, 6 is an energy beam generator, 10 is a jet nozzle, 13
1 is a pump, 15 and 16 are workpieces, and 17 is a chemical solution. In the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
工材の被加工部にエネルギービームを照射するエ
ネルギービーム発生器、上記被加工部の表面に沿
つて化学溶液を噴射する噴流ノズル、及びこの噴
流ノズルに化学溶液を供給するポンプを備えた選
択的化学加工装置。 2 エネルギービームは、レーザ又は光ビームで
あることを特徴とする特許請求の範囲第1項記載
の選択的化学加工装置。[Scope of Claims] 1. A workpiece immersed in a chemical solution, an energy beam generator that irradiates an energy beam onto the processed portion of the workpiece, and sprays the chemical solution along the surface of the processed portion. A selective chemical processing device comprising a jet nozzle for producing a chemical solution and a pump for supplying a chemical solution to the jet nozzle. 2. The selective chemical processing apparatus according to claim 1, wherein the energy beam is a laser or a light beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2050485A JPS61179884A (en) | 1985-02-05 | 1985-02-05 | Selective chemical working device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2050485A JPS61179884A (en) | 1985-02-05 | 1985-02-05 | Selective chemical working device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61179884A JPS61179884A (en) | 1986-08-12 |
| JPH0372158B2 true JPH0372158B2 (en) | 1991-11-15 |
Family
ID=12028987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2050485A Granted JPS61179884A (en) | 1985-02-05 | 1985-02-05 | Selective chemical working device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61179884A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5216633B2 (en) * | 2008-03-19 | 2013-06-19 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Method for suppressing background plating |
| EP2157209B1 (en) * | 2008-07-31 | 2014-10-22 | Rohm and Haas Electronic Materials LLC | Inhibiting Background Plating |
-
1985
- 1985-02-05 JP JP2050485A patent/JPS61179884A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61179884A (en) | 1986-08-12 |
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