JPH03735B2 - - Google Patents
Info
- Publication number
- JPH03735B2 JPH03735B2 JP18050082A JP18050082A JPH03735B2 JP H03735 B2 JPH03735 B2 JP H03735B2 JP 18050082 A JP18050082 A JP 18050082A JP 18050082 A JP18050082 A JP 18050082A JP H03735 B2 JPH03735 B2 JP H03735B2
- Authority
- JP
- Japan
- Prior art keywords
- field emitter
- transition metal
- electron beam
- emitter
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052723 transition metal Inorganic materials 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 150000003624 transition metals Chemical class 0.000 claims description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 7
- 229910001882 dioxygen Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000005090 crystal field Methods 0.000 claims description 3
- -1 Transition metal carbides Chemical class 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Cold Cathode And The Manufacture (AREA)
Description
【発明の詳細な説明】
本発明は放射電子ビームを収束し、高輝度とな
る遷移金属炭化物フイールドエミツターの製造法
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing a transition metal carbide field emitter that focuses a radiation electron beam and provides high brightness.
遷移金属炭化物（TiC、ZrC、HfC、VC、
NbCまたはTaC）はイオン衝撃に強く、電気の
良導体であり、しかもその仕事関数はＷ、Mo、
等の耐熱金属よりも小さい値を示すことから、近
年炭化物フイールドエミツターとしてその特性が
研究されている。ところが遷移金属炭化物のフイ
ールドエミツターからの放射電子は、チツプ先端
近傍から放射状に放出され、いくつかの電子ビー
ム塊に分れる。このような電子放出のパターンは
応用上好ましくない。 Transition metal carbides (TiC, ZrC, HfC, VC,
NbC or TaC) is resistant to ion bombardment and is a good conductor of electricity, and its work function is W, Mo,
In recent years, its properties have been studied as a carbide field emitter because it exhibits a smaller value than other heat-resistant metals such as carbide. However, the radiated electrons from the transition metal carbide field emitter are emitted radially from near the tip of the chip and are divided into several electron beam clusters. Such an electron emission pattern is not preferred in terms of applications.
本発明はこの問題点を解決すべくなされたもの
で、その目的はチツプ先端近傍から放出する電子
ビームを収束化して均一な一本の電子ビームとな
し、高輝度化する遷移金属炭化物のフイールドエ
ミツターの製造法を提供するにある。 The present invention was made to solve this problem, and its purpose is to converge the electron beam emitted from near the tip of the chip to form a single uniform electron beam, and to form a field emitter of transition metal carbide, which is increasing in brightness. To provide a method for manufacturing vines.
本発明者らは前記目的を達成すべく研究の結
果、遷移金属炭化物単結晶のフイールドエミツタ
ーの表面を特定条件による酸化処理を施すと電子
ビームが収束化され、高輝度化することを知見し
た。この知見に基いて本発明を完成した。 As a result of research to achieve the above object, the present inventors discovered that when the surface of a transition metal carbide single crystal field emitter is oxidized under specific conditions, the electron beam is focused and the brightness is increased. . The present invention was completed based on this knowledge.
従来のフイールドエミツターから電子を取出す
時には、フイールドエミツターの表面をフラツシ
ユ加熱し、清浄表面にして使用するのが通例であ
る。この清浄表面からの電子の放出は、エミツタ
ーの軸方位が〔100〕の場合には４回対称、また
その軸方位が〔111〕の場合には３回対称性のエ
ミツシヨンパターンを示し、一般の軸方位ではそ
の軸方位の対称性を示したパターンが得られる。 When extracting electrons from a conventional field emitter, it is customary to flash-heat the surface of the field emitter to make it a clean surface. The emission of electrons from this clean surface exhibits a 4-fold symmetrical emission pattern when the axial orientation of the emitter is [100], and a 3-fold symmetrical emission pattern when the axial orientation is [111]. In a general axial direction, a pattern showing the symmetry of the axial direction is obtained.
第３図に示す図は、〔100〕のチツプからの放出
電子ビームの一般的なパターンであり、図に示す
ように中心部に電子ビームを収束されない。遷移
金属炭化物のフイールドエミツターの場合には、
エミツターの方位をどのように選んでも電子ビー
ムは中心部に収束しない。 The diagram shown in FIG. 3 is a general pattern of the emitted electron beam from a [100] chip, and the electron beam is not focused at the center as shown in the diagram. In the case of transition metal carbide field emitters,
No matter how you choose the orientation of the emitter, the electron beam will not converge to the center.
本発明の遷移金属炭化物のフイールドエミツタ
ーの製造法は下記の通りである。 The method for producing the transition metal carbide field emitter of the present invention is as follows.
TiC、ZrC、HfC、VC、NbCまたはTaCの単
結晶エミツター（先端径約0.1μｍ）を用意する。
このエミツターの軸方位は〔100〕、〔110〕、
〔210〕、〔310〕、〔111〕、その他の低指数方位であ
ればよい。次に超高真空（約１×10-10Torr）の
下で、エミツターを1600℃以上の温度でフラツシ
ユ加熱し清浄表面を形成する。この直後に100L
（1L＝１×10-6Torr×１秒）以上の如く）充分な
量の酸素ガスを導入してエミツター表面に酸素ガ
スを飽和吸着させる。次にこれを超高真空下で
800〜1200℃の温度でフラツシユ加熱することに
より作られる。この最後のフラツシユ加熱が1200
℃を超えると中心部分へ収束化が悪くなる。 Prepare a TiC, ZrC, HfC, VC, NbC, or TaC single crystal emitter (tip diameter approximately 0.1 μm).
The axial direction of this emitter is [100], [110],
[210], [310], [111], and other low index directions are sufficient. Next, under ultra-high vacuum (approximately 1×10 -10 Torr), the emitter is flash heated to a temperature of 1600°C or higher to form a clean surface. Immediately after this 100L
(1 L = 1 x 10 -6 Torr x 1 second) As described above), a sufficient amount of oxygen gas is introduced to saturate the emitter surface with oxygen gas. Next, this is done under ultra-high vacuum.
It is made by flash heating at a temperature of 800-1200℃. This last flash heating is 1200
When the temperature exceeds ℃, convergence toward the center becomes worse.
本発明の製造法による表面酸化型遷移金属炭化
物のフイールドエミツターは第１図に示すように
電子ビームは中心部分に収束されたものとなる。
またその仕事関数は表面処理温度にも依存する
が、一般には表面酸化処理を施さないものの仕事
関数よりも小さい。従つて印加電界が同じであれ
ば大きい電流密度が得られる。 In the surface-oxidized transition metal carbide field emitter manufactured by the manufacturing method of the present invention, the electron beam is focused at the center, as shown in FIG.
Although its work function also depends on the surface treatment temperature, it is generally smaller than the work function of materials without surface oxidation treatment. Therefore, a large current density can be obtained if the applied electric field is the same.
この電子ビームの収束と仕事関数の低下による
電流密度の増加により、電子ビームを高輝度化す
ることができる。 By converging the electron beam and increasing the current density due to a decrease in the work function, it is possible to increase the brightness of the electron beam.
実施例
TiC0.98〔100〕単結晶フイールドエミツターを
２×10-10Torrの真空下で1700℃のフラツシユ加
熱を行ない清浄表面を形成した。その直後に室温
で1000L（1L＝10-6Torr×１秒）の酸素ガスを導
入し、エミツター表面に酸素ガスを飽和吸着させ
た。次にこれを980℃のフラツシユ加熱を行つて、
表面酸化型フイールドエミツターを作つた。この
フイールドエミツターからの放射電子のパターン
は第１図の通りであつた。なお、フイールドエミ
ツターの周辺真空度２×10-10Torr、印加電圧
2.4kV、で行つた。この図が示すように、電子ビ
ームは中心部分に収束されたものであつた。Example A TiC 0.98 [100] single crystal field emitter was flash heated at 1700° C. under a vacuum of 2×10 -10 Torr to form a clean surface. Immediately after that, 1000 L (1 L = 10 -6 Torr x 1 second) of oxygen gas was introduced at room temperature to saturate the emitter surface with oxygen gas. Next, this is flash heated to 980℃,
I made a surface oxidation type field emitter. The pattern of emitted electrons from this field emitter was as shown in Figure 1. In addition, the degree of vacuum around the field emitter is 2×10 -10 Torr, and the applied voltage is
It was run at 2.4kV. As this figure shows, the electron beam was focused at the center.
最後のフラツシユ加熱温度を1250℃にした時の
放射電子のパターンは第２図の通りであり、また
1570℃にした時の放射電子のパターンは第３図の
通りで、中心部分における収束がいずれも悪い。
このようにフラツシユ加熱温度を高くすると表面
の酸化がなくなるので、最後のフラツシユ加熱温
度は800〜1200℃の温度で行うことが必要である。 The pattern of emitted electrons when the final flash heating temperature is 1250℃ is as shown in Figure 2.
The pattern of emitted electrons when heated to 1570°C is shown in Figure 3, with poor convergence in the center.
Since oxidation of the surface is eliminated by increasing the flash heating temperature in this manner, the final flash heating temperature must be 800 to 1200°C.
また、このフイールドエミツターの仕事関数
は、清浄表面の仕事関数（3.5eV）よりやや小さ
い3.2eVであつた。 The work function of this field emitter was 3.2 eV, which is slightly smaller than the work function of a clean surface (3.5 eV).
実施例ZrCに代え、TiC、HfC、VC、NbC、
TaCも同様に処理すると略同様な結果が得られ
た。 Example Instead of ZrC, TiC, HfC, VC, NbC,
Approximately similar results were obtained when TaC was treated in the same manner.
比較例
前記実施例において、導入する酸素ガス量を１
〜10Lの少量とした以外は同様の条件でフイール
ドエミツターを作つた。得られたフイールドエミ
ツターからの放射電子のパターンを実施例と同一
の条件にて調べたところ、電子ビームは中心部分
における収束が悪いことが確認された。なお、こ
のフイールドエミツターの仕事関数は、清浄表面
の仕事関数よりも大きい。Comparative Example In the above example, the amount of oxygen gas introduced was
A field emitter was made under similar conditions except for a small amount of ~10L. When the pattern of emitted electrons from the obtained field emitter was examined under the same conditions as in the example, it was confirmed that the electron beam was poorly converged at the center. Note that the work function of this field emitter is larger than that of the clean surface.
第１図は本発明の製造法による表面酸化型炭化
物のフイールドエミツターからの放射電子のパタ
ーン、第２図は最後のフラツシユ加熱を1250℃で
行つた時の放射電子のパターン、第３図は表面の
酸化を行わない場合及び最後のフラツシユ加熱を
1570℃で行つたものからの放射電子のパターンを
示す。
Figure 1 shows the pattern of emitted electrons from a field emitter of surface oxidized carbide produced by the production method of the present invention, Figure 2 shows the pattern of emitted electrons when the final flash heating was carried out at 1250°C, and Figure 3 shows the pattern of emitted electrons when the final flash heating was performed at 1250°C. When the surface is not oxidized and the final flash heating is
The pattern of emitted electrons from one conducted at 1570℃ is shown.
Claims (1)
ターについて、室温で100L以上の酸素露出を行
つて酸素ガスを飽和吸着させ、その後800〜1200
℃の温度範囲でフラツシユ加熱することにより、
酸素ガスのみを飽和吸着させた酸化表面を得るこ
とを特徴とする表面酸化型炭化物フイールドエミ
ツターの製造法。 ２ 遷移金属炭化物がTiC、ZrC、HfC、VC、
NbCまたはTaCである特許請求の範囲第１項記
載の表面酸化型炭化物フイールドエミツターの製
造法。[Claims] 1. A single crystal field emitter of transition metal carbide is exposed to 100 L or more of oxygen at room temperature to saturately adsorb oxygen gas, and then 800 to 1200
By flash heating in the temperature range of ℃,
A method for producing a surface oxidized carbide field emitter characterized by obtaining an oxidized surface that saturates and adsorbs only oxygen gas. 2 Transition metal carbides include TiC, ZrC, HfC, VC,
A method for producing a surface oxidized carbide field emitter according to claim 1, which is NbC or TaC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57180500A JPS5971232A (en) | 1982-10-14 | 1982-10-14 | Manufacturing method of surface oxidized carbide field emitter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57180500A JPS5971232A (en) | 1982-10-14 | 1982-10-14 | Manufacturing method of surface oxidized carbide field emitter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5971232A JPS5971232A (en) | 1984-04-21 |
| JPH03735B2 true JPH03735B2 (en) | 1991-01-08 |
Family
ID=16084320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57180500A Granted JPS5971232A (en) | 1982-10-14 | 1982-10-14 | Manufacturing method of surface oxidized carbide field emitter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5971232A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7888654B2 (en) * | 2007-01-24 | 2011-02-15 | Fei Company | Cold field emitter |
| US7828622B1 (en) * | 2007-10-25 | 2010-11-09 | Kla-Tencor Technologies Corporation | Sharpening metal carbide emitters |
| JP5074902B2 (en) * | 2007-11-30 | 2012-11-14 | 電気化学工業株式会社 | Electron emission source |
| CN102629538B (en) * | 2012-04-13 | 2014-03-19 | 吴江炀晟阴极材料有限公司 | Electrode material with low work function and high chemical stability |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS559775A (en) * | 1978-07-08 | 1980-01-23 | Toyosha Co Ltd | Tilling device |
| JPS5661733A (en) * | 1979-10-24 | 1981-05-27 | Hitachi Ltd | Field emission cathode and its manufacture |
-
1982
- 1982-10-14 JP JP57180500A patent/JPS5971232A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5971232A (en) | 1984-04-21 |
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