JPH0375516B2 - - Google Patents
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- Publication number
- JPH0375516B2 JPH0375516B2 JP61131896A JP13189686A JPH0375516B2 JP H0375516 B2 JPH0375516 B2 JP H0375516B2 JP 61131896 A JP61131896 A JP 61131896A JP 13189686 A JP13189686 A JP 13189686A JP H0375516 B2 JPH0375516 B2 JP H0375516B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- faraday rotation
- lattice constant
- coefficient
- saturation magnetization
- Prior art date
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Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、フアラデー効果を利用した光アイソ
レータ、光サーキユレータ等に用いられる磁気光
学材料に関し、特にフアラデー回転角の温度係数
が小さく、飽和磁化の小さい磁気光学素子用材料
に関するものである。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a magneto-optical material used for optical isolators, optical circulators, etc. that utilize the Faraday effect, and in particular has a small temperature coefficient of the Faraday rotation angle and a low saturation magnetization. This invention relates to materials for small magneto-optical elements.
(従来の技術)
レーザーを用いる光通信において、光源への戻
り光を遮断するため光アイソレータが必要で、光
アイソレータにはフアラデー効果のある磁性ガー
ネツト材料が用いられている。しかしながら従来
の磁性ガーネツト材料バルク体のフアラデー回転
子では小型・軽量化、低コスト化に限度があり、
これに代る材料が種々研究され、
式:(GdCa)3(GaMgZr)5O12
で表わされるガーネツト単結晶基板、所謂高格子
定数GGG基板上に、例えば
式:(GdBi)3(FeAlGa)5O12
で表わされるようなBi置換希土類鉄ガーネツト
をエピタキシヤル成長させたものが提案されてい
る。Bi置換希土類鉄ガーネツトは、希土類サイ
トを一部Biで置換することによりフアラデー回
転係数を大きくし、Bi置換による格子定数の増
大はFeサイトの一部をAl、Gaで置換することに
調整している。エピタキシヤル成長において基板
と膜との格子定数のマツチングは極めて重要であ
る。(Prior Art) In optical communication using a laser, an optical isolator is required to block light returning to the light source, and a magnetic garnet material with a Faraday effect is used for the optical isolator. However, with the conventional Faraday rotator made of bulk magnetic garnet material, there are limits to the reduction in size, weight, and cost.
Various alternative materials have been researched, and on a garnet single crystal substrate represented by the formula: (GdCa) 3 (GaMgZr) 5 O 12 , a so-called high lattice constant GGG substrate, for example, a material with the formula: (GdBi) 3 (FeAlGa) 5 is used. Epitaxially grown Bi-substituted rare earth iron garnets such as O 12 have been proposed. In Bi-substituted rare earth iron garnet, the Faraday rotation coefficient is increased by replacing some of the rare earth sites with Bi, and the increase in the lattice constant due to Bi substitution is adjusted by replacing some of the Fe sites with Al and Ga. There is. Matching the lattice constants of the substrate and film is extremely important in epitaxial growth.
(発明が解決しようとする問題点)
ところでフアラデー回転子には、フアラデー回
転係数が大きいことの外に、光アイソレータの性
能を一定に保つために使用環境温度(−20〜60
℃)におけるフアラデー回転角の温度係数が小さ
いことが要求される。更に光アイソレータを小型
化、軽量化するため飽和磁化の小さいことが要求
される。この理由は、光アイソレータの外形寸法
は主に磁石で決まり、磁石を小さくするには飽和
磁化の小さいフアラデー回転子が必要だからであ
る。しかしながら、上記条件を全て満足するよう
な材料は未だ報告されていない。(Problem to be Solved by the Invention) In addition to having a large Faraday rotation coefficient, the Faraday rotator has a temperature range of -20 to 60°C in order to keep the performance of the optical isolator constant.
It is required that the temperature coefficient of the Faraday rotation angle at (°C) be small. Furthermore, in order to make the optical isolator smaller and lighter, it is required that the saturation magnetization be small. The reason for this is that the external dimensions of the optical isolator are mainly determined by the magnet, and in order to make the magnet smaller, a Faraday rotator with low saturation magnetization is required. However, a material that satisfies all of the above conditions has not yet been reported.
本発明の目的は、フアラデー回転係数が大でフ
アラデー回転角の温度係数が小さく、しかも飽和
磁化が小さいという、フアラデー回転子に要求さ
れる全ての条件を満足する磁気光学素子用材料を
提供することにある。 An object of the present invention is to provide a material for a magneto-optical element that satisfies all the conditions required for a Faraday rotator, such as a large Faraday rotation coefficient, a small temperature coefficient of the Faraday rotation angle, and a small saturation magnetization. It is in.
(問題点を解決するための手段)
この目的を達成するため本発明の磁気光学素子
用材料は、前記高格子定数GGG基板上に式:
YbxTbyBi3-x-yFe5O12で表わされるBi置換希土類
鉄ガーネツトをエピタキシヤル成長させたもので
あり、上記式においてxとyは、x+Y≦2.2,
x≦y及び
y=−2.3x+21×(12.62−a)
(但しaは上記基板の格子定数である。)
なる条件を何れも満足するように選択されている
点に特徴がある。(Means for solving the problem) In order to achieve this object, the magneto-optical element material of the present invention is formed on the high lattice constant GGG substrate by the following formula:
Bi-substituted rare earth iron garnet represented by Yb x Tb y Bi 3-xy Fe 5 O 12 is epitaxially grown, and in the above formula, x and y are x+Y≦2.2,
It is characterized in that it is selected so as to satisfy the following conditions: x≦y and y=−2.3x+21×(12.62−a) (where a is the lattice constant of the substrate).
本発明の磁気光学素子用材料は、公知の高格子
定数GGG、即ち、(GdCa)3(GaMgZr)5O12で表
わされるガーネツト単結晶基板を用いるが、この
基板材料はGdサイト、Gaサイトの置換量によつ
て格子定数が12.48〜12.53Åの範囲で変るので、
予め格子定数を測定しておき、Bi置換希土類鉄
ガーネツトの組成がこの格子定数に±0.001Åの
範囲内で一致(マツチング)するようにする。 The magneto-optical element material of the present invention uses a garnet single crystal substrate with a known high lattice constant GGG, that is, (GdCa) 3 (GaMgZr) 5 O 12 , and this substrate material has Gd sites and Ga sites. Since the lattice constant changes in the range of 12.48 to 12.53 Å depending on the amount of substitution,
The lattice constant is measured in advance so that the composition of the Bi-substituted rare earth iron garnet matches this lattice constant within a range of ±0.001 Å.
Bi置換希土類鉄ガーネツトの希土類成分の1
つとしてYbを選択する理由は、Ybはイオン半径
が小さく、Feサイトを置換しなくても格子定数
が基板とマツチングする範囲で充分Bi置換量を
多くできるからである。FeサイトをAl,Ga等で
置換するとフアラデー回転角の温度係数は増大す
るが、本発明は希土類成分の1つにYbを用いる
ことによりFeサイトの置換を不要とし、フアラ
デー回転角の温度係数を最小にすると共にフアラ
デー回転係数を大きくすることに成功している。 1 of the rare earth components of Bi-substituted rare earth iron garnet
The reason why Yb is selected as the material is that Yb has a small ionic radius, and the amount of Bi substitution can be sufficiently increased within the range where the lattice constant matches the substrate without replacing Fe sites. If the Fe site is replaced with Al, Ga, etc., the temperature coefficient of the Faraday rotation angle increases, but in the present invention, by using Yb as one of the rare earth components, the replacement of the Fe site is not necessary, and the temperature coefficient of the Faraday rotation angle increases. We succeeded in minimizing the Faraday rotation coefficient and increasing the Faraday rotation coefficient.
又、希土類成分の他の1つにTbを選択した理
由は、Tbは使用環境温度(−20〜60℃)におい
て磁化反転がなく、しかも飽和磁化は小さくでき
るからである。飽和磁化を最も小さくできる希土
類元素はGdであるが、Gdは上記使用温度範囲で
磁化反転が起る致命的欠点があり使用できない。 Further, the reason why Tb was selected as one of the other rare earth components is that Tb does not undergo magnetization reversal at the operating environment temperature (-20 to 60° C.), and its saturation magnetization can be made small. The rare earth element that can minimize saturation magnetization is Gd, but Gd has the fatal drawback of magnetization reversal occurring in the above-mentioned operating temperature range, and cannot be used.
YbxTbyBi3-x-yFe5O12においてxとyはフアラ
デー回転係数と飽和磁化の目標値、基板材料との
格子定数マツチングにより決る値である。先ず上
記組成系において、フアラデー回転係数はBi置
換量に比例し、フアラデー回転係数の目標を−
1000度/cm以上(波長1.3μm時)とするにはBiの
1分子式当りの含有率(f.u.)を0.8以上とする必
要がある。この実験結果に基づき、3−x−y≧
0.8であること、即ちx+y≦2.2が導かれる。次
に飽和磁化の大きさはYb/Tbのモル比に比例
し、飽和磁化大きさの目標を1500Oe以下とする
にはYb/Tbのモル比を50%以下とする必要があ
る。この実験結果に基づき、YbとTbのf.u.,即
ちxとy=x≦yなる関係を満足することが必要
となる。更に基板と上記組成の膜とは格子定数が
マツチングする必要がある。このマツチング条件
はYb3Fe5O12,Tb3Fe5O12,Bi3Fe5O12の格子定
数とf.u.及び基板の格子定数から理論的に求めら
れる。即ち、Yb3Fe5O12,Tb3Fe5O12の格子定数
は12.291Å、12.477Åであり、Bi3Fe5O12の理論
格子定数は12.620Åであるので、基板の格子定数
をaÅとすれば次式が成立する。 In Yb x Tb y Bi 3-xy Fe 5 O 12 , x and y are values determined by the Faraday rotation coefficient, target value of saturation magnetization, and lattice constant matching with the substrate material. First, in the above composition system, the Faraday rotation coefficient is proportional to the amount of Bi substitution, and the target Faraday rotation coefficient is -
In order to achieve 1000 degrees/cm or more (at a wavelength of 1.3 μm), the content (fu) per molecular formula of Bi needs to be 0.8 or more. Based on this experimental result, 3-x-y≧
0.8, that is, x+y≦2.2. Next, the magnitude of saturation magnetization is proportional to the Yb/Tb molar ratio, and in order to set the target saturation magnetization magnitude to 1500 Oe or less, the Yb/Tb molar ratio must be 50% or less. Based on this experimental result, it is necessary to satisfy the relationship of fu of Yb and Tb, that is, x and y=x≦y. Furthermore, it is necessary that the lattice constants of the substrate and the film having the above composition be matched. This matching condition is theoretically determined from the lattice constants of Yb 3 Fe 5 O 12 , Tb 3 Fe 5 O 12 , Bi 3 Fe 5 O 12 and the lattice constants of fu and the substrate. That is, the lattice constants of Yb 3 Fe 5 O 12 and Tb 3 Fe 5 O 12 are 12.291 Å and 12.477 Å, and the theoretical lattice constant of Bi 3 Fe 5 O 12 is 12.620 Å, so the lattice constant of the substrate is a Å Then, the following formula holds true.
12.291x+12.477y+12.620×(3−x−y)=3a
この式からy=−2.3x+21×(12.62−a)が導か
れる。(aは上記のように12.48〜12.53Åの範囲
である。)従つて基板の格子定数が決まればxと
yの関係は一義的に決まる。 12.291x+12.477y+12.620×(3-x-y)=3a
From this equation, y=-2.3x+21×(12.62-a) is derived. (As mentioned above, a is in the range of 12.48 to 12.53 Å.) Therefore, once the lattice constant of the substrate is determined, the relationship between x and y is uniquely determined.
上記のようにYbとTbのf.u.,即ちxとyは、
x+y≦2.2、x≦y、y=−2.3x+21×(12.62−
a)の3式を満足するように選択する必要があ
る。 As mentioned above, the fu of Yb and Tb, that is, x and y, are
x+y≦2.2, x≦y, y=−2.3x+21×(12.62−
It is necessary to select so as to satisfy the three equations a).
(実施例)
実施例 1
基板として格子定数12.498Åの
(GbCa)3(GaMgZr)5O12を用い、液相エピタキ
シヤル法によりYb0.5Tb1.3Bi1.2Fe5O12を育成し
た。この液相エピタキシヤルの方法は融液組成は
Yb2O32.3g、Tb2O34.3g、Fe2O341.8g、
PbO206.7g、Bi2O3150.5g、B2O33.5gとし、こ
れらを白金ルツボ中で1000℃で融解した後、810
℃に温度を下げて過冷却状態とし、この融液に上
記基板を100rpmで回転しながら接触させて行つ
た。(Examples) Example 1 Using (GbCa) 3 (GaMgZr) 5 O 12 with a lattice constant of 12.498 Å as a substrate, Yb 0.5 Tb 1.3 Bi 1.2 Fe 5 O 12 was grown by a liquid phase epitaxial method. In this liquid phase epitaxial method, the melt composition is
Yb 2 O 3 2.3 g, Tb 2 O 3 4.3 g, Fe 2 O 3 41.8 g,
After melting 206.7 g of PbO, 150.5 g of Bi 2 O 3 and 3.5 g of B 2 O 3 in a platinum crucible at 1000°C,
The temperature was lowered to .degree. C. to create a supercooled state, and the substrate was brought into contact with this melt while rotating at 100 rpm.
成長速度は1μm/分で、膜厚300μmに成長させ
た。この材料は波長1.3μmで測定して室温におけ
るフアラデー回転係数が−1700度/cm、フアラデ
ー回転角の30℃における温度係数が0.064度/℃
となり、飽和磁化の大きさは1100Oeであつた。 The growth rate was 1 μm/min, and the film was grown to a thickness of 300 μm. This material has a Faraday rotation coefficient of -1700 degrees/cm at room temperature when measured at a wavelength of 1.3 μm, and a temperature coefficient of Faraday rotation angle of 0.064 degrees/℃ at 30 degrees Celsius.
The saturation magnetization was 1100 Oe.
実施例 2
融液組成をYb2O31.5g、Tb2O35.0g、
Fe3O341.8g、PbO206.8g、Bi2O3150.5g、
B2O33.5gとし、育成温度を820℃とした以外は
実施例1と同様に高格子定数GGG基板にエピタ
キシヤル膜を400μm厚に成長させた。得られた膜
組成はYb0.4Tb1.5Bi1.1Fe5O12であり、波長1.3μm
で測定して室温におけるフアラデー回転係数が−
1300度/cm、フアラデー回転角の30℃における温
度係数は0.060度/℃、飽和磁化は1000Oeであつ
た。Example 2 Melt composition: Yb 2 O 3 1.5 g, Tb 2 O 3 5.0 g,
Fe 3 O 3 41.8g, PbO206.8g, Bi 2 O 3 150.5g,
An epitaxial film was grown to a thickness of 400 μm on a high lattice constant GGG substrate in the same manner as in Example 1, except that 3.5 g of B 2 O 3 was used and the growth temperature was 820° C. The obtained film composition was Yb 0.4 Tb 1.5 Bi 1.1 Fe 5 O 12 , and the wavelength was 1.3 μm.
The Faraday rotation coefficient at room temperature is −
The temperature coefficient at 30°C of the Faraday rotation angle was 0.060°/°C, and the saturation magnetization was 1000 Oe.
実施例 3
融液組成をYb2O33.4g、Tb2O33.2g、
Fe2O341.8g、PbO206.7g、Bi2O3150.5g、
B2O33.5gとし、育成温度を800℃とした以外は
実施例1と同様にエピタキシヤル成長を行ない、
厚さ200μmのYb0.7Tb0.9Bi1.4Fe5O12の膜を得た。
このエピタキシヤル膜を有する材料は波長1.3μm
で測定して室温におけるフアラデー回転係数が−
2600度/cm、フアラデー回転角の30℃における温
度係数は0.062度/℃、飽和磁化は1300Oeであつ
た。Example 3 Melt composition: Yb 2 O 3 3.4 g, Tb 2 O 3 3.2 g,
Fe 2 O 3 41.8g, PbO206.7g, Bi 2 O 3 150.5g,
Epitaxial growth was carried out in the same manner as in Example 1 except that 3.5 g of B 2 O 3 was used and the growth temperature was 800°C.
A Yb 0.7 Tb 0.9 Bi 1.4 Fe 5 O 12 film with a thickness of 200 μm was obtained.
The material with this epitaxial film has a wavelength of 1.3 μm.
The Faraday rotation coefficient at room temperature is −
The temperature coefficient at 2600 degrees/cm, the Faraday rotation angle at 30 degrees Celsius was 0.062 degrees/℃, and the saturation magnetization was 1300 Oe.
(発明の効果)
本発明により、波長1.3μmにおいてフアラデー
回転係数の絶対値が1000度/cm以上、フアラデー
回転角の温度変化は0.065度/℃以下、飽和磁化
が1500Oe以下という極めてバランスのとれた磁
気光学素子用材料を得ることができた。このよう
な材料によれば、光アイソレータ、光サーキユレ
ータ等をより小型、軽量化し、低コスト化を図る
ことが可能である。(Effects of the Invention) The present invention provides an extremely well-balanced structure with an absolute value of the Faraday rotation coefficient of 1000 degrees/cm or more at a wavelength of 1.3 μm, a temperature change in the Faraday rotation angle of 0.065 degrees/℃ or less, and a saturation magnetization of 1500 Oe or less. A material for magneto-optical elements could be obtained. According to such materials, it is possible to make optical isolators, optical circulators, etc. smaller and lighter, and to reduce costs.
Claims (1)
と、該基板上にエピタキシヤル成長させた、 式:YbxTbyBi3-x-yFe5O12 で表わされ且つxとyは、x+y≦2.2,x≦y
及び y=−2.3x+21×(12.62−a) (aは上記基板の格子定数で、12.48〜12.53の
範囲の値、単位A)なる条件を満足する磁性ガー
ネツト単結晶膜とからなる磁性光学素子用材料。[Claims] 1. A garnet single crystal substrate having a composition represented by the formula: (GdCa) 3 (GaMgZr) 5 O 12 and a garnet single crystal substrate epitaxially grown on the substrate, the formula: Yb x Tb y Bi 3- xy Fe 5 O 12 , and x and y are x+y≦2.2, x≦y
and y = -2.3x + 21 x (12.62 - a) (a is the lattice constant of the above substrate, a value in the range of 12.48 to 12.53, unit A) for a magnetic optical element comprising a magnetic garnet single crystal film that satisfies the following conditions. material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13189686A JPS62288199A (en) | 1986-06-09 | 1986-06-09 | Material for magneto-optical element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13189686A JPS62288199A (en) | 1986-06-09 | 1986-06-09 | Material for magneto-optical element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62288199A JPS62288199A (en) | 1987-12-15 |
| JPH0375516B2 true JPH0375516B2 (en) | 1991-12-02 |
Family
ID=15068689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13189686A Granted JPS62288199A (en) | 1986-06-09 | 1986-06-09 | Material for magneto-optical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62288199A (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4972696A (en) * | 1972-11-17 | 1974-07-13 | ||
| JPS5645895A (en) * | 1979-09-25 | 1981-04-25 | Nec Corp | Growing method of garnet liquid phase epitaxial film |
| JPS5878106A (en) * | 1981-10-29 | 1983-05-11 | Nec Corp | Magnetooptical thin film element |
| JPS61113026A (en) * | 1984-11-07 | 1986-05-30 | Agency Of Ind Science & Technol | Medium for magnetooptic element |
-
1986
- 1986-06-09 JP JP13189686A patent/JPS62288199A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62288199A (en) | 1987-12-15 |
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