JPH0377273B2 - - Google Patents
Info
- Publication number
- JPH0377273B2 JPH0377273B2 JP13152085A JP13152085A JPH0377273B2 JP H0377273 B2 JPH0377273 B2 JP H0377273B2 JP 13152085 A JP13152085 A JP 13152085A JP 13152085 A JP13152085 A JP 13152085A JP H0377273 B2 JPH0377273 B2 JP H0377273B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- target
- sputtering
- resin target
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、スパツタに使用する樹脂ターゲツ
トに関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) This invention relates to a resin target used in sputtering.
（従来の技術）
一般に、スパツタ装置は、第３図に示すよう
に、真空室１１に、樹脂ターゲツト１２を配置す
るターゲツト電極１３と、サブストレート１４を
保持するホルダー電極１５と、前記ターゲツト電
極１３を冷却する冷却水を導入するとともに、電
極１３，１５間に高周波電力を入射させるための
管１６とが設けられている。(Prior Art) Generally, as shown in FIG. 3, a sputtering apparatus includes a vacuum chamber 11, a target electrode 13 for disposing a resin target 12, a holder electrode 15 for holding a substrate 14, and a target electrode 13 for holding a substrate 14. A tube 16 is provided for introducing cooling water to cool the electrodes and for inputting high frequency power between the electrodes 13 and 15.
そしてスパツタを行なう場合、真空室１１を排
気し、その排気後、10-3〜10-2Torr台までアル
ゴンガスを導入する。そして電極１３，１５間に
高周波電力を供給して、電極１３，１５間に放電
を起させ、この放電によつて発生したアルゴンガ
スイオンが樹脂ターゲツト１２をスパツタしてサ
ブストレート１４に薄膜を形成させている。 When sputtering is performed, the vacuum chamber 11 is evacuated, and after evacuating, argon gas is introduced to a level of 10 -3 to 10 -2 Torr. Then, high frequency power is supplied between the electrodes 13 and 15 to cause a discharge between the electrodes 13 and 15, and the argon gas ions generated by this discharge sputter the resin target 12 to form a thin film on the substrate 14. I'm letting you do it.
（本発明が解決しようとする問題点）
しかしながら、樹脂ターゲツト１２の表面はア
ルゴイオンの衝撃により温度が上昇し、さらにタ
ーゲツト電極１３は冷却水によつて冷却されてい
るので、樹脂ターゲツト１２の表裏に相当な温度
差が生じ、このため熱膨張によつて樹脂ターゲツ
ト１２が鎖線で示すように変形してしまい、この
変形により放電は不安定になつて、サブストレー
ト１４の膜厚分布が均一にならなくなつてしまう
という問題があつた。(Problems to be Solved by the Invention) However, since the surface of the resin target 12 increases in temperature due to the impact of Argo ions, and the target electrode 13 is further cooled by cooling water, the front and back surfaces of the resin target 12 As a result, the resin target 12 is deformed as shown by the chain line due to thermal expansion, and this deformation makes the discharge unstable and the film thickness distribution of the substrate 14 becomes uniform. I had a problem with it getting worse.
この問題を解消するために、治具や接着剤等を
用いてその変形を押える試みがなされているが前
者の場合、その変形を十分に押えることができ
ず、後者の場合、樹脂の接着は難しくまたは接着
した場合、樹脂ターゲツト１２の交換が面倒にな
る等の問題が生じ、いずれも満足のいくような解
決策が提案されていなかつた。 In order to solve this problem, attempts have been made to suppress the deformation using jigs and adhesives, but in the former case, the deformation cannot be suppressed sufficiently, and in the latter case, the resin adhesion is If the resin target 12 is difficult or adheres, problems such as troublesome replacement of the resin target 12 arise, and no satisfactory solutions have been proposed for either of these problems.
そこでこの発明は、熱変形のしない樹脂ターゲ
ツトを提供することを目的としてなされたもので
ある。 Therefore, the present invention was made for the purpose of providing a resin target that does not undergo thermal deformation.
（問題を解決するための手段）
この発明は、上記の目的を達成するために、樹
脂ターゲツトの、スパツタを行なう側の面に溝を
形成したものである。(Means for Solving the Problems) In order to achieve the above object, the present invention forms grooves on the surface of the resin target on the sputtering side.
（本発明の作用）
スパツタによつて樹脂ターゲツトの面が温度上
昇しても溝によつて熱膨張が吸収されるので熱変
形を起さない。(Action of the present invention) Even if the surface of the resin target rises in temperature due to sputtering, thermal expansion is absorbed by the grooves, so no thermal deformation occurs.
（本発明の効果）
熱変形を起さないので、安定した放電が行なわ
れ、均一な膜厚分布を得ることができる。(Effects of the Invention) Since thermal deformation does not occur, stable discharge is performed and a uniform film thickness distribution can be obtained.
（本発明の実施例）
第１，２図において、１は例えばポリアミド樹
脂からなり、厚さ５mm、直径100mm樹脂ターゲツ
トで、その表面に、幅１mm、深さ4.5mmの溝２が
10mmピツチで縦横に形成されている。(Embodiment of the present invention) In Figs. 1 and 2, reference numeral 1 is a resin target made of polyamide resin, for example, with a thickness of 5 mm and a diameter of 100 mm, and a groove 2 with a width of 1 mm and a depth of 4.5 mm is formed on the surface of the resin target.
It is formed vertically and horizontally with a 10mm pitch.
溝２をホルダー電極１５側に対向させるように
してこの樹脂ターゲツト１をターゲツト極１３に
設置し（第３図参照）、従来と同様にしてスパツ
タを行なえば、樹脂ターゲツト１の溝２側の表面
がスパツタによつて温度上昇する。この温度上昇
によつて片面が熱膨張するが、その熱膨張が溝２
によつて吸収されるので、熱変形は起さない。 If this resin target 1 is placed on the target electrode 13 with the groove 2 facing the holder electrode 15 side (see Fig. 3) and sputtering is performed in the same manner as in the conventional method, the surface of the resin target 1 on the groove 2 side will be The temperature rises due to spatter. This temperature rise causes thermal expansion on one side, but this thermal expansion
Since it is absorbed by the heat exchanger, no thermal deformation occurs.
なお、前記溝２は碁盤の目のように設けている
が、これに限定されるものではなく例えば渦状に
したり、他の形状に設けてもよく、また両面に設
けてもよいことは勿論である。また前記樹脂ター
ゲツト１としてポリアミド樹脂を使用している
が、AAS樹脂、ABS樹脂、ACS樹脂、アミノ樹
脂、アリル樹脂、フツソ樹脂、ポリアセタール、
ポリアンミド、ポリアミドイミド、ポリカーボネ
ート、ポリエチレン、ポリエチルンテレフタレー
ト、ポリミド、ポリフエニレンスルフイド等の樹
脂を使用してもよい。 Although the grooves 2 are provided in a grid pattern, the grooves 2 are not limited to this, and may be provided in a spiral shape, for example, or in other shapes, and of course may be provided on both sides. be. In addition, although polyamide resin is used as the resin target 1, AAS resin, ABS resin, ACS resin, amino resin, allyl resin, fluorine resin, polyacetal,
Resins such as polyamide, polyamideimide, polycarbonate, polyethylene, polyethylene terephthalate, polymide, polyphenylene sulfide, etc. may be used.
第１図は実施例の平面図、第２図は第１図の断
面図、第３図はスパツタ装置の説明図である。
１……樹脂ターゲツト、２……溝。
FIG. 1 is a plan view of the embodiment, FIG. 2 is a sectional view of FIG. 1, and FIG. 3 is an explanatory diagram of the sputtering apparatus. 1...Resin target, 2...Groove.
Claims (1)
に溝を形成したことを特徴とするスパツタ用樹脂
ターゲツト。1. A resin target for sputtering, characterized in that a groove is formed on the surface of the resin target on which sputtering is performed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13152085A JPS61291964A (en) | 1985-06-17 | 1985-06-17 | Resin target for sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13152085A JPS61291964A (en) | 1985-06-17 | 1985-06-17 | Resin target for sputtering |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61291964A JPS61291964A (en) | 1986-12-22 |
| JPH0377273B2 true JPH0377273B2 (en) | 1991-12-10 |
Family
ID=15059972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13152085A Granted JPS61291964A (en) | 1985-06-17 | 1985-06-17 | Resin target for sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61291964A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3628554B2 (en) * | 1999-07-15 | 2005-03-16 | 株式会社日鉱マテリアルズ | Sputtering target |
| WO2005007924A1 (en) * | 2003-07-07 | 2005-01-27 | Honeywell International Inc. | Sputtering target constructions |
| EP1851166A2 (en) | 2005-01-12 | 2007-11-07 | New York University | System and method for processing nanowires with holographic optical tweezers |
| JP5029431B2 (en) * | 2007-03-09 | 2012-09-19 | 三菱マテリアル株式会社 | Vapor deposition material and method for forming a vapor deposition film using the vapor deposition material |
| KR20110117565A (en) * | 2010-04-21 | 2011-10-27 | 박영춘 | Sputter target including stepped structure and sputtering device using the same |
| AT15050U1 (en) * | 2015-12-18 | 2016-11-15 | Plansee Composite Mat Gmbh | Coating source with structuring |
-
1985
- 1985-06-17 JP JP13152085A patent/JPS61291964A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61291964A (en) | 1986-12-22 |
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