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JPH0413425B2 - - Google Patents
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JPH0413425B2 - - Google Patents

Info

Publication number
JPH0413425B2
JPH0413425B2 JP60064572A JP6457285A JPH0413425B2 JP H0413425 B2 JPH0413425 B2 JP H0413425B2 JP 60064572 A JP60064572 A JP 60064572A JP 6457285 A JP6457285 A JP 6457285A JP H0413425 B2 JPH0413425 B2 JP H0413425B2
Authority
JP
Japan
Prior art keywords
carbon
graphite
layers
reaction tube
hydrocarbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60064572A
Other languages
Japanese (ja)
Other versions
JPS61223179A (en
Inventor
Shigeo Nakajima
Yoshikazu Yoshimoto
Tomonari Suzuki
Yoshuki Togaki
Toshio Inoguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP60064572A priority Critical patent/JPS61223179A/en
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to EP88113145A priority patent/EP0305790B1/en
Priority to DE8686103833T priority patent/DE3678030D1/en
Priority to EP86103833A priority patent/EP0201696B1/en
Priority to DE8888113145T priority patent/DE3687529T2/en
Publication of JPS61223179A publication Critical patent/JPS61223179A/en
Priority to US07/190,353 priority patent/US4946370A/en
Priority to US07/344,961 priority patent/US5049409A/en
Priority to US07/706,006 priority patent/US5273778A/en
Publication of JPH0413425B2 publication Critical patent/JPH0413425B2/ja
Priority to US08/051,441 priority patent/US5404837A/en
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1229Composition of the substrate
    • C23C18/1245Inorganic substrates other than metallic
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Description

【発明の詳細な説明】 <産業上の利用分野> 本発明は、黒鉛の層状構造の層間に金属原子ま
たは金属化合物を挿入した炭素層間化合物の合成
方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method for synthesizing a carbon intercalation compound in which metal atoms or metal compounds are inserted between layers of a layered structure of graphite.

<従来の技術及びその問題点> 黒鉛の層状構造に注目してその層間に、金属原
子、金属ハロゲン化物あるいは酸等を挿入するこ
とにより黒鉛層間化合物が合成されることは古く
から知られている。従来の合成法は、挿入物質の
蒸気圧の制御または電気化学的反応を利用して、
天然黒鉛または、高配向黒鉛の層間に異種物質を
挿入するものである。しかしながら、これらの方
法では、得られる黒鉛層間化合物は、熱、水分、
空気中の酸素等に対して不安定であり、また挿入
される物質は層間への出入が容易な場合に限定さ
れる。挿入物質の容易な出入を利用した電池への
応用はほぼ実用化されつつあるが、一方、挿入物
質を層間に固定させて、層間化合物の異方性を利
用する電子材料への応用は現在のところ実を結ん
でいない。
<Prior art and its problems> It has long been known that graphite intercalation compounds can be synthesized by focusing on the layered structure of graphite and inserting metal atoms, metal halides, acids, etc. between the layers. . Traditional synthetic methods utilize control of the vapor pressure of the intercalating material or electrochemical reactions to
A different substance is inserted between layers of natural graphite or highly oriented graphite. However, in these methods, the graphite intercalation compound obtained is not susceptible to heat, moisture,
It is unstable to oxygen in the air, and the substances that can be inserted are limited to those that can easily enter and exit between the layers. Applications to batteries that take advantage of the easy ingress and egress of intercalated substances are almost being put into practical use, but on the other hand, applications to electronic materials that utilize the anisotropy of intercalation compounds by fixing intercalated substances between layers are currently in progress. However, it is not bearing fruit.

<発明の目的> 本発明は、金属光沢を呈する炭素堆積物の合成
と同時に、金属原子または金属化合物を黒鉛構造
の層間に挿入し、炭素層間化合物を合成する新規
な製造技術を提供することを目的とするものであ
る。
<Objective of the Invention> The present invention aims to provide a new manufacturing technology for synthesizing a carbon intercalation compound by simultaneously inserting metal atoms or metal compounds between the layers of a graphite structure and at the same time synthesizing a carbon deposit exhibiting metallic luster. This is the purpose.

<発明の概要> 黒鉛は電子キヤリアとホールキヤリアがほぼ同
数存在する半金属である。従つて、この半金属体
に電子供与性または電子吸引性原子もしくは化合
物を挿入することができればN型またはP型電気
伝導体が実現される。このことは古くから知られ
ており、挿入物は黒鉛層間にステージ構造をもつ
のでこの構造に起因する電気的、光学的あるいは
磁気的性質等の特異性に注目した研究がなされて
いるが、本発明は黒鉛層間化合物を合成するた
め、天然または合成された高配向黒鉛に、後から
挿入すべき物質を導入する方法に代えて、炭化水
素の熱分解CVD法を用いた金属光沢の炭素堆積
物を合成するプロセス中に挿入すべき原子または
化合物を導入することによつて炭素層間化合物を
再現性良く量産することを可能とした点で特徴を
有する。本発明の方法で層間に挿入される物質は
金属光沢の炭素堆積物が形成される温度(例えば
約600℃〜1100℃)で熱分解されて、金属原子ま
たは金属化合物となり、炭素堆積物中に存在する
黒鉛の層構造間に挿入される。これは、炭化水素
と有機金属の原料ガスを同一の反応系で同時に熱
分解すると、反応系内には炭化水素の分解により
生じた六角網状平面構造の炭素体と有機金属の分
解により生じた金属原子とが混在することにな
り、気相熱分解炭素が六角網状平面構造の炭素体
が積み重なりながら堆積形成されるという特殊性
を有しているために、六角網状平面構造の炭素体
の積層堆積と同時に金属原子も一緒に堆積してそ
の間に取り込まれるためである。従つて反応性の
高いアルカリ金属、ハロゲン、強酸、強塩基等の
従来用いられている挿入物以外に反応性の低い金
属または金属化合物を挿入物とすることもでき
る。金属光沢の炭素堆積物は、炭素のSP2結合に
基く六角形構造の2次元性を有するのみならず炭
素のSP3結合も若干存在するので、黒鉛層間に挿
入された金属原子または金属化合物が層間から出
入することを有効に防ぐ。このようにして黒鉛構
造の層間に挿入物を固定し、黒鉛構造の異方性を
利用することによつて炭素層間化合物の電子材料
への応用が可能となる。
<Summary of the Invention> Graphite is a metalloid in which there are approximately the same number of electron carriers and hole carriers. Therefore, if an electron-donating or electron-withdrawing atom or compound can be inserted into this semimetal, an N-type or P-type electrical conductor can be realized. This has been known for a long time, and since the insert has a stage structure between graphite layers, research has focused on the unique electrical, optical, or magnetic properties caused by this structure. In order to synthesize a graphite intercalation compound, the invention uses a hydrocarbon pyrolysis CVD method to produce carbon deposits with metallic luster, instead of the method of later introducing substances to be inserted into natural or synthesized highly oriented graphite. It is characterized in that it makes it possible to mass-produce carbon intercalation compounds with good reproducibility by introducing atoms or compounds to be inserted during the process of synthesizing carbon intercalation compounds. The material intercalated between the layers in the method of the present invention is thermally decomposed into metal atoms or metal compounds at the temperature at which metallic luster carbon deposits are formed (e.g., about 600°C to 1100°C), and is formed into metal atoms or metal compounds in the carbon deposits. It is inserted between the existing graphite layer structure. This is because when hydrocarbons and organometallic raw material gases are simultaneously thermally decomposed in the same reaction system, the reaction system contains carbon bodies with a hexagonal network planar structure produced by the decomposition of the hydrocarbons and metals produced by the decomposition of the organometallics. Because gas-phase pyrolytic carbon has the special characteristic of being formed by stacking carbon bodies with a hexagonal network planar structure, layered deposition of carbon bodies with a hexagonal network planar structure occurs. This is because at the same time, metal atoms are also deposited and captured between them. Therefore, in addition to conventionally used inserts such as highly reactive alkali metals, halogens, strong acids, and strong bases, metals or metal compounds with low reactivity can also be used as inserts. Carbon deposits with metallic luster not only have a two-dimensional hexagonal structure based on carbon SP 2 bonds, but also have some carbon SP 3 bonds, so metal atoms or metal compounds inserted between graphite layers are Effectively prevents entry and exit from between the layers. By thus fixing the insert between the layers of the graphite structure and utilizing the anisotropy of the graphite structure, it becomes possible to apply carbon intercalation compounds to electronic materials.

<実施例> 図面は本発明の1実施例に用いられる炭素層間
化合物生成装置のブロツク構造図である。
<Example> The drawing is a block structural diagram of a carbon intercalation compound generating apparatus used in one example of the present invention.

出発物質として使用される炭化水素化合物とし
ては脂肪族炭化水素好ましくは芳香属炭化水素ま
たは不飽和炭化水素が望ましくこれらは約1000℃
前後で熱分解される。具体的な炭化水素名として
は、 シクロヘキサン、ノルマルヘキサン、ベンゼ
ン、ビフエニル、アントラセン、ヘキサメチルヘ
ンゼン、1.2−ジブロモエチレン、2−ブチン、
アセチレン、ジフエニルアセチレン等がある。使
用した炭化水素の種類によつて、後述する反応管
への供給方法はバブラー法、蒸発法または昇華法
等を用い、毎時数ミリモル以下の一定の供給量に
制御される。この一定値は、出発物質の種類に強
く依存する。この一定値以上に供給量を設定する
と得られる炭素堆積物の表面凹凸が激しくなりス
ス状炭素堆積物が生成されることになる。
The hydrocarbon compound used as a starting material is preferably an aliphatic hydrocarbon, preferably an aromatic hydrocarbon or an unsaturated hydrocarbon.
It is thermally decomposed before and after. Specific hydrocarbon names include cyclohexane, n-hexane, benzene, biphenyl, anthracene, hexamethylhensen, 1,2-dibromoethylene, 2-butyne,
There are acetylene, diphenylacetylene, etc. Depending on the type of hydrocarbon used, a bubbler method, evaporation method, sublimation method, or the like is used as the method of supplying the hydrocarbon to the reaction tube, which will be described later, and the supply rate is controlled at a constant amount of several mmol or less per hour. This constant value strongly depends on the type of starting material. If the supply amount is set above this certain value, the surface unevenness of the resulting carbon deposit will become severe and a soot-like carbon deposit will be generated.

炭素薄膜が生成される単結晶基板としては、シ
リコン、サフアイヤ、炭化珪素(α形及びβ形)、
窒化硼素、キツシユ黒鉛、高配向黒鉛等を用い、
約1000℃程度の反応温度で変質しない条件を満足
するものを選定しなければならない。
Single-crystal substrates on which carbon thin films are formed include silicon, sapphire, silicon carbide (α-type and β-type),
Using boron nitride, hard graphite, highly oriented graphite, etc.
It is necessary to select a material that satisfies the conditions of not deteriorating at a reaction temperature of approximately 1000°C.

真空蒸留による精製操作を行なつたベンゼンが
収容された原料容器1よりパイレツクスガラス管
2を介してベンゼン分子が石英反応管3へ供給さ
れる。原料容器1から蒸発されるベンゼン分子は
コツク4の開閉操作を介してガラス管2へ供給さ
れ、ガラス管2に介設されたガラスキヤピラリ5
でベンゼン分子供給量が決定される。またガラス
管2の途中でテトラフエニル錫の収容された室6
よりテトラフエニル錫が混合されて反応管3へベ
ンゼン分子とテトラフエニル錫が同時に供給され
る。ガラス管2はヒーテイングテープ7で被覆さ
れ保温されている。ガラス管2と反応管3の接合
部はパイレツクス一石英返還継手8で連結されて
いる。反応管3は加熱炉9内へ挿入されて反応温
度に加熱され、反応管3内には炭素堆積物を成長
させる単結晶基板を載置した保持台10が配置さ
れている。反応管3へ導入された蒸気の残余分は
排気管11を介して外部へ排出される。
Benzene molecules are supplied to a quartz reaction tube 3 via a Pyrex glass tube 2 from a raw material container 1 containing benzene that has been purified by vacuum distillation. Benzene molecules evaporated from the raw material container 1 are supplied to the glass tube 2 through the opening/closing operation of the pot 4, and then the glass capillary 5 interposed in the glass tube 2.
The amount of benzene molecules supplied is determined by In addition, a chamber 6 containing tetraphenyltin is located in the middle of the glass tube 2.
Tetraphenyltin is then mixed and benzene molecules and tetraphenyltin are simultaneously supplied to the reaction tube 3. The glass tube 2 is covered with a heating tape 7 to keep it warm. The glass tube 2 and the reaction tube 3 are connected to each other by a Pyrex-quartz return joint 8. The reaction tube 3 is inserted into a heating furnace 9 and heated to a reaction temperature, and a holding table 10 on which a single crystal substrate on which a carbon deposit is to be grown is placed inside the reaction tube 3. The remainder of the steam introduced into the reaction tube 3 is exhausted to the outside via the exhaust pipe 11.

加熱炉9を昇温して反応管3の内部を900〜
1000℃程度に保持し、キヤピラリ5で供給量が制
御されたベンゼン分子とテトラフエニル錫分子を
毎時合計数ミリモル以下の一定量で反応管3内へ
供給する。反応管3内へ導入されたベンゼン分子
は熱分解して単結晶基板上に金属光沢を呈する炭
素堆積物が成長形成される。この時、テトラフエ
ニル錫も熱分解し、炭素堆積物の層間に錫原子が
挿入される結果、得られる炭素堆積物は炭素層間
化合物となる。作製される炭素層間化合物は単結
晶基板の結晶性を受け継いで良好な結晶性を有す
る薄膜となり、従来に比べて低い温度で高配向化
が達成される。また反応管3内へ導入されるベン
ゼン分子と有機金属のテトラフエニル錫分子は一
定に制御されているため基板上に作製される炭素
積層物の膜厚は均一となり結晶性の向上とともに
金属光沢を呈する表面が得られる。
Raise the temperature of the heating furnace 9 to bring the inside of the reaction tube 3 to 900~
Benzene molecules and tetraphenyltin molecules, which are maintained at about 1000° C. and whose supply amount is controlled by a capillary 5, are supplied into the reaction tube 3 at a constant amount of a total of several millimoles or less per hour. The benzene molecules introduced into the reaction tube 3 are thermally decomposed, and a carbon deposit exhibiting metallic luster is grown and formed on the single crystal substrate. At this time, tetraphenyltin is also thermally decomposed and tin atoms are inserted between the layers of the carbon deposit, so that the resulting carbon deposit becomes a carbon intercalation compound. The produced carbon intercalation compound inherits the crystallinity of the single-crystal substrate and becomes a thin film with good crystallinity, and high orientation can be achieved at a lower temperature than in the past. Furthermore, since the benzene molecules and organometallic tetraphenyltin molecules introduced into the reaction tube 3 are controlled to a constant level, the thickness of the carbon laminate produced on the substrate is uniform, and it exhibits metallic luster with improved crystallinity. A surface is obtained.

錫の存在は、電子顕微鏡で炭素薄膜中を錫原子
のX線像を撮影することにより、均一に存在する
ことが確められた。さらにX線回折によると黒鉛
の(002)反射以外に錫の原子半径と黒鉛の層間
距離の和に相当する反射も観測することができ
た。
The uniform presence of tin was confirmed by taking an X-ray image of tin atoms in the carbon thin film using an electron microscope. Furthermore, according to X-ray diffraction, in addition to the (002) reflection of graphite, it was also possible to observe a reflection corresponding to the sum of the atomic radius of tin and the interlayer distance of graphite.

尚、層間化合物を形成する有機金属化合物とし
ては、テトラフエニル錫以外にテトラフエニル鉛
を使用しても同様の結果が得られた。
Note that similar results were obtained when tetraphenyl lead was used in place of tetraphenyltin as the organometallic compound forming the intercalation compound.

<発明の効果> 以上の如く本発明に係る金属光沢の炭素層間化
合物の合成法は、黒鉛の層状構造の層間に、種々
の金属原子または金属化合物を効率良く安定に挿
入することを可能にし、その異方性を利用した新
規の電子材料を創出することができると期待され
る。
<Effects of the Invention> As described above, the method for synthesizing a carbon intercalation compound with metallic luster according to the present invention makes it possible to efficiently and stably insert various metal atoms or metal compounds between the layers of a layered structure of graphite. It is expected that new electronic materials can be created using this anisotropy.

【図面の簡単な説明】[Brief explanation of drawings]

添附図面は本発明の1実施例に用いられる炭素
層間化合物生成装置のブロツク構成図である。 1……原料容器、2……ガラス管、3……反応
管、4……コツク、5……キヤピラリ、9……加
熱炉、10……保持台、11……排気管。
The accompanying drawing is a block diagram of a carbon intercalation compound generating apparatus used in one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Raw material container, 2... Glass tube, 3... Reaction tube, 4... Capillary, 9... Heating furnace, 10... Holding stand, 11... Exhaust pipe.

Claims (1)

【特許請求の範囲】[Claims] 1 炭化水素を反応系で熱分解させて基板上に炭
素薄膜層を堆積させると同時に前記反応系で有機
金属を熱分解せしめることにより前記炭素薄膜の
層間に前記有機金属の金属原子を挿入することを
特徴とする炭素層間化合物の合成法。
1. Depositing a carbon thin film layer on a substrate by thermally decomposing a hydrocarbon in a reaction system, and simultaneously thermally decomposing an organic metal in the reaction system to insert metal atoms of the organic metal between the layers of the carbon thin film. A method for synthesizing carbon intercalation compounds characterized by:
JP60064572A 1985-03-20 1985-03-26 Method for synthesizing inter-carbon layer compound Granted JPS61223179A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP60064572A JPS61223179A (en) 1985-03-26 1985-03-26 Method for synthesizing inter-carbon layer compound
EP88113145A EP0305790B1 (en) 1985-03-20 1986-03-20 Production of graphite intercalation compound and doped carbon films
DE8686103833T DE3678030D1 (en) 1985-03-20 1986-03-20 MANUFACTURE OF CARBON LAYERS.
EP86103833A EP0201696B1 (en) 1985-03-20 1986-03-20 Production of carbon films
DE8888113145T DE3687529T2 (en) 1985-03-20 1986-03-20 PRODUCTION OF GRAPHITE STORAGE COMPOUND AND DOPED CARBON FILMS.
US07/190,353 US4946370A (en) 1985-03-20 1988-05-05 Method for the production of carbon films having an oriented graphite structure
US07/344,961 US5049409A (en) 1985-03-20 1989-04-28 Method for metal or metal compounds inserted between adjacent graphite layers
US07/706,006 US5273778A (en) 1985-03-20 1991-05-28 Method for producing graphite intercalation compound
US08/051,441 US5404837A (en) 1985-03-20 1993-04-22 Method for preparing a graphite intercalation compound having a metal or metal compounds inserted between adjacent graphite layers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60064572A JPS61223179A (en) 1985-03-26 1985-03-26 Method for synthesizing inter-carbon layer compound

Publications (2)

Publication Number Publication Date
JPS61223179A JPS61223179A (en) 1986-10-03
JPH0413425B2 true JPH0413425B2 (en) 1992-03-09

Family

ID=13262071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60064572A Granted JPS61223179A (en) 1985-03-20 1985-03-26 Method for synthesizing inter-carbon layer compound

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Country Link
JP (1) JPS61223179A (en)

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Publication number Publication date
JPS61223179A (en) 1986-10-03

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