JPH0424366B2 - - Google Patents
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- Publication number
- JPH0424366B2 JPH0424366B2 JP62254924A JP25492487A JPH0424366B2 JP H0424366 B2 JPH0424366 B2 JP H0424366B2 JP 62254924 A JP62254924 A JP 62254924A JP 25492487 A JP25492487 A JP 25492487A JP H0424366 B2 JPH0424366 B2 JP H0424366B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- formula
- general formula
- trimethyl
- polysilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Silicon Polymers (AREA)
Description
(産業上の利用分野)
本発明は、一般式()
(式中、Rは水酸基、アミノ基、ビニル基、低
級アルキル基、低級アルコキシ基またはハロゲン
原子を表わす)
で示される繰り返し単位よりなる1,2,2−ト
リメチル−1−(置換フエニル)ポリジシラン
(以下、ポリシラン()と称する)に関する発
明、および原料である一般式()
(式中、R′は前記Rと同一もしくは保護基を
有する水酸基またはアミノ基を表わす)で示され
る1,2−ジクロロ−1,2,2−トリメチル−
1−置換フエニルジシラン(以下、ジシラン
()と称する)を、アルカリ金属またはアルカ
リ土類金属の存在下に、縮合反応させることから
なるポリシラン()の製造法に関する。
本発明のポリシラン()は、フオトレジスト
材料、有機半導体、光情報記憶材料などの電子材
料またはプレセラミツクスとしての機能を有する
有用な化合物であり、文献未載の新規化合物であ
る。
(従来の技術)
従来、ポリシラン類の製造法としては、一般式
()
(式中、Xはアルキル基またはアリール基を、
は正の整数を表わす)
で示される鎖状または環状のポリシランを製造
する方法〔The Journal of American
Chemical Society,71,963(1949年)、
Chemistry Letters,1976,551(1976)および
Journal of Polymer Science:Polymer
Letters Edition,21,819(1983)〕、あるいは一
般式()
(式中、Xは前記と同一の意味を、Yはアルキ
ル基またはアリール基を、nおよびmは正の整数
を表わす)
で示されるジメチルポリシランとアリールアルキ
ルポリシランのコポリマーを製造する方法〔アメ
リカ特許第4260780号およびJournal of Polymer
Science:Polymer Chemistry Edicion,22,
159(1984)〕が展示されている。
(発明が解決すべき問題点)
従来のポリシラン類は、前述の一般式()で
示されるように、ケイ素−けい素結合よりなる主
鎖にアルキル基およびアリール基を導入したホモ
ポリマー、あるいは一般式()で示されるよう
に、ジメチルシラン単位とアリールアルキルシラ
ン単位が不規則に重合したコポリマーの如きポリ
シランのみであり、本発明の如くケイ素−ケイ素
結合よりなる主鎖に、置換基としてメチル基およ
び置換フエニル基を規則的に導入したポリシラン
は見い出されていない。
(問題点を解決するための手段)
本発明者らは、ケイ素−ケイ素結合よりなる主
鎖に置換基としてメチル基および置換フエニル基
を規則的に導入したポリシランの製造法として、
一般式()
(式中、R′は前記と同一の意味を表わす)で
示されるジシラン()を原料とし、このジシラ
ン()をアルカリ金属またはアルカリ土類金属
の存在下に縮合反応させることにより、一般式
()
(式中、Rは前記と同一の意味を表わす)で示
される繰り返し単位よりなるポリシラン()が
得られることを見い出し、本発明を完成したもの
である。
本発明のポリシラン()の製造法は、ジシラ
ン()をアルカリ金属またはアルカリ土類金属
の存在下に、非プロトン溶媒例えばn−ペンタ
ン、n−ヘキサン、ベンセン、トルエン、テトラ
ヒドロフランなどの溶媒中で縮合させる。本発明
で用いるアルカリ金属としてはリチウム、ナトリ
ウム、カリウムなどが、アルカリ土類金属として
はマグネシウム、カルシウムなどが好ましいが、
特にリチウム、ナトリウム、カリウムが好適であ
る。また、本発明の原料であるジシラン()の
置換フエニル基の置換基としては水酸基、アミノ
基、ビニル基、低級アルキル基、低級アルコキシ
基ハロゲン原子であり、このうち水酸基、アミノ
基は保護基により保護されていてもよく、保護基
としてはトリアルキルシリル基が好適であり、こ
のほか水酸基の保護基としてべンジル基、テトラ
ヒドロピラニル基が適している。
本反応において、ジシラン()1当量に対し
てアルカリ金属またはアルカリ土類金属は最少2
当量必要であり、通常は2〜3当量用いる。反応
温度は0℃以上、反応溶媒の沸点以下で行う。反
応時間は使用するアルカリ金属またはアルカリ土
類金属の種類、反応溶媒や反応温度により変動す
るが、通常は1〜50時間を要する。反応終了後、
反応溶媒を除去し、必要に応じてポリシラン類の
通常の精製法、例えばベンゼン−アルコール系で
再沈殿を繰り返す等の手段により精製することに
よりポリシラン()を得る。
(発明の効果)
本発明は、ジシラン()をアルカリ金属また
はアルカリ土類金属の存在下に縮合反応を行うこ
とにより、ケイ素−ケイ素結合よりなる主鎖に、
置換基としてメチル基および置換フエニル基を規
則的に導入したポリシラン()を見い出したも
のである。本発明で得られるポリシラン()
は、重量平均分子量(Mw)5000〜500000、分散
度(Mw/Mn)2.0〜30.0であり、フオトレジ
スト材料、有機半導体、光情報記憶材料などの電
子材料またはプレセラミツクスとしての機能を有
する。
(実施例)
以下、実施例により本発明を説明する。
実施例 1
冷却管、滴下ロート、温度計および攪拌機を備
えた1四つ口フラスコをアルゴン置換した後
に、トルエン300gおよびナトリウム23g(1モル)
を仕込み、攪拌しながら1,2−ジクロロ−1,
2,2−トリメチル−1−(4−メトキシフエニ
ル)ジシラン131.6g(0.5モル)のトルエン溶液
を、反応温度を50℃に保ちながら1時間を要して
滴下した。滴下終了後、引続き50℃で20時間反応
する。反応終了後室温まで冷却し、副生したナト
リウム塩を別したのち、液を濃縮してトルエ
ンを留去する。濃縮残にベンゼン300mlを加え、
攪拌しながらエタノール1を加えてポリシラン
を晶析させた。減圧下に付着した溶媒を完全に除
去し、白色粉末の1,2,2−トリメチル−1−
(4−メトキシフエニル)ポリジシラン49.1gを得
た。収率51%。
H1−核磁気共鳴スペクトル(60MHz,CDC3)
δppm=−0.5〜1.0(ブロード、Si−CH3、9H)
3.5〜4.1(ブロード,Ph−OCH3 ,3H)
6.0〜7.5(ブロード、Si−Ph−、4H)
ゲルパーミエーシヨンクロマトグラフイー
測定条件:カラム 日立化成GL−R400M
溶離剤 テトラヒドロフラン
流 速 1.0ml/min
重量平均分子量(w) 97000
分 散 度(w/n) 6.5
実施例 2〜8
第1表記載のジシラン()を原料とし、実施
例1と同様に操作して、第1表記載のポリシラン
()を得た。収率および分析値を第1表に記載
する。
(Industrial Application Field) The present invention is based on the general formula () (In the formula, R represents a hydroxyl group, an amino group, a vinyl group, a lower alkyl group, a lower alkoxy group, or a halogen atom.) 1,2,2-trimethyl-1-(substituted phenyl)polydisilane ( Invention related to polysilane (hereinafter referred to as polysilane ()) and the general formula () which is the raw material 1,2-dichloro-1,2,2-trimethyl-
The present invention relates to a method for producing polysilane (), which comprises subjecting 1-substituted phenyldisilane (hereinafter referred to as disilane ()) to a condensation reaction in the presence of an alkali metal or alkaline earth metal. The polysilane () of the present invention is a useful compound having a function as an electronic material such as a photoresist material, an organic semiconductor, an optical information storage material, or a preceramic, and is a novel compound that has not been described in any literature. (Prior art) Conventionally, as a method for producing polysilanes, the general formula () (wherein, X is an alkyl group or an aryl group,
represents a positive integer) [The Journal of American
Chemical Society, 71 , 963 (1949),
Chemistry Letters, 1976 , 551 (1976) and
Journal of Polymer Science:Polymer
Letters Edition, 21 , 819 (1983)] or general formula () (In the formula, X has the same meaning as above, Y represents an alkyl group or an aryl group, and n and m represent positive integers.) Method for producing a copolymer of dimethylpolysilane and arylalkylpolysilane [US patent No. 4260780 and Journal of Polymer
Science: Polymer Chemistry Edicion, 22 ,
159 (1984)] is on display. (Problems to be Solved by the Invention) Conventional polysilanes are homopolymers in which alkyl groups and aryl groups are introduced into the main chain consisting of silicon-silicon bonds, or general polysilanes, as shown in the general formula () above. As shown in formula (), it is only a polysilane such as a copolymer in which dimethylsilane units and arylalkylsilane units are irregularly polymerized, and as in the present invention, a methyl group is added to the main chain consisting of silicon-silicon bonds as a substituent. However, no polysilane in which substituted phenyl groups are introduced regularly has been found. (Means for Solving the Problems) The present inventors have developed a method for producing polysilane in which methyl groups and substituted phenyl groups are regularly introduced as substituents into the main chain consisting of silicon-silicon bonds.
General formula () (wherein R' represents the same meaning as above) is used as a raw material, and by subjecting this disilane () to a condensation reaction in the presence of an alkali metal or alkaline earth metal, the general formula ( ) (In the formula, R represents the same meaning as above.) It was discovered that a polysilane () consisting of a repeating unit represented by the above formula can be obtained, and the present invention was completed. The method for producing polysilane () of the present invention involves condensing disilane () in an aprotic solvent such as n-pentane, n-hexane, benzene, toluene, tetrahydrofuran, etc. in the presence of an alkali metal or alkaline earth metal. let The alkali metals used in the present invention are preferably lithium, sodium, potassium, etc., and the alkaline earth metals are preferably magnesium, calcium, etc.
Particularly suitable are lithium, sodium, and potassium. In addition, the substituents of the substituted phenyl group of disilane (), which is the raw material of the present invention, are hydroxyl group, amino group, vinyl group, lower alkyl group, lower alkoxy group, and halogen atom. It may be protected, and a trialkylsilyl group is suitable as a protecting group, and a benzyl group and a tetrahydropyranyl group are also suitable as a protecting group for a hydroxyl group. In this reaction, a minimum of 2 alkali metals or alkaline earth metals are used per 1 equivalent of disilane ().
An equivalent amount is required, and usually 2 to 3 equivalents are used. The reaction temperature is 0°C or higher and lower than the boiling point of the reaction solvent. The reaction time varies depending on the type of alkali metal or alkaline earth metal used, the reaction solvent and the reaction temperature, but usually takes 1 to 50 hours. After the reaction is complete,
The reaction solvent is removed and, if necessary, the polysilane is purified by a conventional purification method for polysilanes, such as repeated reprecipitation with a benzene-alcohol system, to obtain polysilane (2). (Effects of the Invention) The present invention provides a main chain consisting of silicon-silicon bonds by carrying out a condensation reaction of disilane () in the presence of an alkali metal or an alkaline earth metal.
We have discovered a polysilane () in which methyl groups and substituted phenyl groups are regularly introduced as substituents. Polysilane obtained by the present invention ()
has a weight average molecular weight ( Mw ) of 5,000 to 500,000 and a degree of dispersion ( Mw / Mn ) of 2.0 to 30.0, and can function as electronic materials or preceramics such as photoresist materials, organic semiconductors, and optical information storage materials. have (Example) The present invention will be explained below with reference to Examples. Example 1 A four-necked flask equipped with a cooling tube, dropping funnel, thermometer, and stirrer was purged with argon, and then 300 g of toluene and 23 g (1 mol) of sodium were added.
and while stirring, add 1,2-dichloro-1,
A toluene solution of 131.6 g (0.5 mol) of 2,2-trimethyl-1-(4-methoxyphenyl)disilane was added dropwise over 1 hour while maintaining the reaction temperature at 50°C. After the dropwise addition was completed, the reaction was continued at 50°C for 20 hours. After the reaction is completed, the mixture is cooled to room temperature, the by-produced sodium salt is separated, and the liquid is concentrated to remove toluene. Add 300ml of benzene to the concentrated residue,
While stirring, 1 portion of ethanol was added to crystallize polysilane. The adhering solvent was completely removed under reduced pressure, and a white powder of 1,2,2-trimethyl-1-
49.1 g of (4-methoxyphenyl)polydisilane was obtained. Yield 51%. H1 -nuclear magnetic resonance spectrum (60MHz, CDC3 ) δppm=-0.5~1.0 (broad, Si- CH3 , 9H) 3.5-4.1 (broad, Ph- OCH3 , 3H) 6.0-7.5 (broad, Si- Ph -, 4H) Gel permeation chromatography Measurement conditions: Column Hitachi Chemical GL-R400M Eluent Tetrahydrofuran Flow rate 1.0ml/min Weight average molecular weight (w) 97000 Dispersion degree (w/n) 6.5 Example 2~ 8 Using the disilane () listed in Table 1 as a raw material, the same procedure as in Example 1 was carried out to obtain the polysilane () listed in Table 1. The yield and analytical values are listed in Table 1.
【表】
溶離剤 テトラヒドロフラン
流速 1.0ml〓〓
[Table] Eluent Tetrahydrofuran
Flow rate 1.0ml〓〓
Claims (1)
級アルキル基、低級アルコキシ基またはハロゲン
原子を表わす) で示される繰り返し単位よりなり、重量平均分子
量5000〜500000の1,2,2−トリメチル−1−
(置換フエニル)ポリジシラン。 2 一般式() (式中、R′は水酸基、アミノ基、ビニル基、
低級アルキル基、低級アルコキシ基、ハロゲン原
子もしくは保護基を有する水酸基またはアミノ基
を表わす) で示される1,2−ジクロロ−1,2,2−トリ
メチル−1−置換フエニルジシランを、アルカリ
金属またはアルカリ土類金属の存在下に、縮合反
応させることを特徴とする、一般式() (式中、Rは前記と同一の意味を表わす)で示
される繰り返し単位よりなり、重量平均分子量
5000〜500000の1,2,2−トリメチル−1−
(置換フエニル)ポリジシランの製造法。[Claims] 1 General formula () (In the formula, R represents a hydroxyl group, an amino group, a vinyl group, a lower alkyl group, a lower alkoxy group, or a halogen atom) 1,2,2-trimethyl- 1-
(Substituted phenyl)polydisilane. 2 General formula () (In the formula, R′ is a hydroxyl group, an amino group, a vinyl group,
A 1,2-dichloro-1,2,2-trimethyl-1-substituted phenyldisilane represented by a lower alkyl group, a lower alkoxy group, a halogen atom, or a hydroxyl group or an amino group having a protective group is combined with an alkali metal or alkaline earth General formula () characterized by carrying out a condensation reaction in the presence of a similar metal (In the formula, R represents the same meaning as above), weight average molecular weight
5000-500000 1,2,2-trimethyl-1-
A method for producing (substituted phenyl)polydisilane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25492487A JPH0196222A (en) | 1987-10-08 | 1987-10-08 | 1,2,2-trimethyl-1-(substituted phenyl)polydisilane and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25492487A JPH0196222A (en) | 1987-10-08 | 1987-10-08 | 1,2,2-trimethyl-1-(substituted phenyl)polydisilane and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0196222A JPH0196222A (en) | 1989-04-14 |
| JPH0424366B2 true JPH0424366B2 (en) | 1992-04-24 |
Family
ID=17271749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25492487A Granted JPH0196222A (en) | 1987-10-08 | 1987-10-08 | 1,2,2-trimethyl-1-(substituted phenyl)polydisilane and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0196222A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3843458B2 (en) * | 1996-06-07 | 2006-11-08 | 大阪瓦斯株式会社 | Polysilane and hole transport material |
| JP2002167438A (en) * | 2000-11-29 | 2002-06-11 | Jsr Corp | Silicon polymer, film forming composition and insulating film forming material |
| JP4000836B2 (en) * | 2001-11-28 | 2007-10-31 | セイコーエプソン株式会社 | Method for forming a film pattern |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6098431A (en) * | 1983-11-04 | 1985-06-01 | Nippon Telegr & Teleph Corp <Ntt> | Pattern forming material and formation of pattern |
| US4588801A (en) * | 1984-04-05 | 1986-05-13 | The United States Of America As Represented By The United States Department Of Energy | Polysilane positive photoresist materials and methods for their use |
| JPS63141046A (en) * | 1986-12-03 | 1988-06-13 | Toshiba Corp | Resist |
-
1987
- 1987-10-08 JP JP25492487A patent/JPH0196222A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0196222A (en) | 1989-04-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |