JPH0424685B2 - - Google Patents
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- Publication number
- JPH0424685B2 JPH0424685B2 JP27908088A JP27908088A JPH0424685B2 JP H0424685 B2 JPH0424685 B2 JP H0424685B2 JP 27908088 A JP27908088 A JP 27908088A JP 27908088 A JP27908088 A JP 27908088A JP H0424685 B2 JPH0424685 B2 JP H0424685B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- magneto
- garnet crystal
- substrate
- optical element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013078 crystal Substances 0.000 claims description 61
- 239000002223 garnet Substances 0.000 claims description 31
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 11
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 150000002910 rare earth metals Chemical class 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052779 Neodymium Inorganic materials 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 5
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 4
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 4
- 229910003443 lutetium oxide Inorganic materials 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910001938 gadolinium oxide Inorganic materials 0.000 claims description 3
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 239000000696 magnetic material Substances 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 description 9
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000006467 substitution reaction Methods 0.000 description 7
- TVFHPXMGPBXBAE-UHFFFAOYSA-N [Sc].[Gd] Chemical compound [Sc].[Gd] TVFHPXMGPBXBAE-UHFFFAOYSA-N 0.000 description 3
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- RDQSSKKUSGYZQB-UHFFFAOYSA-N bismuthanylidyneiron Chemical compound [Fe].[Bi] RDQSSKKUSGYZQB-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- OSGMVZPLTVJAFX-UHFFFAOYSA-N [Gd].[Lu] Chemical compound [Gd].[Lu] OSGMVZPLTVJAFX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- MPARYNQUYZOBJM-UHFFFAOYSA-N oxo(oxolutetiooxy)lutetium Chemical compound O=[Lu]O[Lu]=O MPARYNQUYZOBJM-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光アイソレーター、光スイツチ、光
偏光器として利用される磁気光学素子の基板用ガ
ーネツト結晶およびその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a garnet crystal for a substrate of a magneto-optical element used as an optical isolator, an optical switch, or an optical polarizer, and a method for manufacturing the same.
ネオジウムガリウムガーネツト結晶、ガドリニ
ウムガリウムガーネツト結晶あるいはガドリニウ
ムスカンジウムガリウムガーネツト結晶を基板に
用い、基板上に磁気光学結晶膜として、一般式
（Bi1-x-yRxR′y）3Fe5O12（ただし、ｘ，ｙはそれぞ
れ０≦ｘ≦0.7，０≦ｙ≦0.7の範囲の数値を示
し、Ｒ，R′はそれぞれＹ、Sc、La、Ce、Nd、
Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、
Luなどの希土類元素を表す）で表されるビスマ
ス置換希土類鉄ガーネツト結晶を成膜した磁気光
学素子は知られている。
A neodymium gallium garnet crystal, a gadolinium gallium garnet crystal, or a gadolinium scandium gallium garnet crystal is used as a substrate, and a magneto-optic crystal film is formed on the substrate using the general formula (Bi 1-xy R x R′ y ) 3 Fe 5 O 12 (However, x and y respectively indicate numerical values in the range of 0≦x≦0.7, 0≦y≦0.7, and R, R′ respectively indicate Y, Sc, La, Ce, Nd,
Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb,
Magneto-optical elements are known in which a bismuth-substituted rare earth iron garnet crystal, represented by a rare earth element such as Lu, is formed into a film.
基板上に磁気光学結晶膜を形成するのは、スパ
ツタ法、気相成長法あるいは液相エピタキシヤル
成長法により基板上に磁気光学結晶を成長させて
行われる。その場合、成長する膜結晶の欠陥や転
位を少なくするためには、成膜結晶と基板結晶の
格子定数をなるべく一致させる必要がある。ま
た、磁気光学効果に優れた磁気光学素子を得るた
めには、できるだけフアラデー回転角の大きな成
膜結晶を用いる必要がある。 The magneto-optic crystal film is formed on the substrate by growing the magneto-optic crystal on the substrate by a sputtering method, a vapor phase growth method, or a liquid phase epitaxial growth method. In this case, in order to reduce defects and dislocations in the growing film crystal, it is necessary to match the lattice constants of the film-forming crystal and the substrate crystal as much as possible. Furthermore, in order to obtain a magneto-optical element with excellent magneto-optic effects, it is necessary to use a deposited crystal with as large a Faraday rotation angle as possible.
ビスマス置換希土類鉄ガーネツト結晶のフアラ
デー回転角および格子定数はビスマスの置換量に
比例して大きくなる。最もフアラデー回転角が大
きいビスマスで完全に置換されたビスマス鉄ガー
ネツト結晶の格子定数は12.62Aである。これに
対して、ガドリニウムガリウムガーネツト結晶、
ネオジウムガリウムガーネツト結晶あるいはガド
リニウムスカンジウムガリウムガーネツト結晶の
格子定数はそれぞれ12.38A，12.51A，12.56Aと
小さい。したがつて、前述のような従来の磁気光
学素子においては、ビスマス置換希土類鉄ガーネ
ツト結晶のビスマス置換量を大きくして磁気光学
効果を向上させようとすると、成膜結晶と基板結
晶の間で格子不整合を起こし、成膜した結晶に転
位あるいはクラツクが生ずるようになるから、磁
気光学効果に優れたものを得にくいと言う問題が
あつた。 The Faraday rotation angle and lattice constant of bismuth-substituted rare earth iron garnet crystals increase in proportion to the amount of bismuth substitution. The lattice constant of a bismuth iron garnet crystal completely substituted with bismuth, which has the largest Faraday rotation angle, is 12.62A. On the other hand, gadolinium gallium garnet crystal,
The lattice constants of neodymium gallium garnet crystal and gadolinium scandium gallium garnet crystal are as small as 12.38A, 12.51A, and 12.56A, respectively. Therefore, in the conventional magneto-optical element as described above, when an attempt is made to increase the amount of bismuth substitution in the bismuth-substituted rare earth iron garnet crystal to improve the magneto-optic effect, the lattice formation occurs between the deposited crystal and the substrate crystal. There is a problem in that it is difficult to obtain an excellent magneto-optical effect because mismatching occurs and dislocations or cracks occur in the deposited crystal.
本発明は、上述の問題を解消するためになされ
たものであり、ビスマス置換量を大きくしたビス
マス置換希土類鉄ガーネツト結晶を磁気光学結晶
膜とする磁気光学素子の基板に用いて格子不整合
を起こすことのないような、格子定数の大きい基
板用ガーネツト結晶の提供を目的とする。
The present invention has been made to solve the above-mentioned problems, and uses a bismuth-substituted rare earth iron garnet crystal with a large amount of bismuth substitution as a substrate of a magneto-optic element as a magneto-optic crystal film to cause lattice mismatch. The purpose of the present invention is to provide a garnet crystal for a substrate with a large lattice constant, which will never occur.
本発明者らは、格子定数の大きい基板用ガーネ
ツト結晶を得るべく研究を重ねた結果、格子定数
がビスマス置換量の大きいビスマス置換希土類鉄
ガーネツト結晶と整合するガドリニウムルテチウ
ムガリウムガーネツト結晶を得ることができた。
As a result of repeated research to obtain a garnet crystal for a substrate with a large lattice constant, the inventors of the present invention were able to obtain a gadolinium lutetium gallium garnet crystal whose lattice constant matches that of a bismuth-substituted rare earth iron garnet crystal with a large amount of bismuth substitution. did it.
本発明は、上述の研究結果に基いてなされたも
のであり、一般式（Gd1-xLux）3（GdyLuzGa1-y-z）
2Ga3O12（ただし、ｘ，ｙ，ｚはそれぞれ０≦ｘ
≦0.4，０≦ｙ≦0.05，0.6≦ｚ≦1.0の範囲の数値
を示す）で表されることを特徴とする磁気光学素
子の基板用ガーネツト結晶およびガドリニウム，
ルテチウム，ガリウムの酸化物をGd：Lu：Ga
（原子比）＝｛３（１−ｘ）＋2y｝：（3x＋2z）：｛２
（１−ｙ−ｚ）＋３｝（ただし、ｘ，ｙ，ｚはそれ
ぞれ０≦ｘ≦0.4，０≦ｙ≦0.05，0.6≦ｚ≦1.0範
囲の数値を示す）の量比で十分混合し、得られた
混合物を不活性ガスまたは酸化性ガス雰囲気中で
溶融し、固化させて結晶を得ることを特徴とする
磁気光学素子の基板用ガーネツト結晶の製造方法
にある。 The present invention was made based on the above research results, and has the general formula (Gd 1-x Lu x ) 3 (Gd y Lu z Ga 1-yz )
2 Ga 3 O 12 (However, x, y, z are each 0≦x
≦0.4, 0≦y≦0.05, 0.6≦z≦1.0) Garnet crystal and gadolinium for a substrate of a magneto-optical element,
Gd:Lu:Ga oxides of lutetium and gallium
(Atomic ratio) = {3 (1-x) + 2y}: (3x + 2z): {2
(1-y-z)+3} (where x, y, and z respectively indicate numerical values in the ranges of 0≦x≦0.4, 0≦y≦0.05, 0.6≦z≦1.0), and The present invention provides a method for producing a garnet crystal for a substrate of a magneto-optical element, characterized in that the obtained mixture is melted in an inert gas or oxidizing gas atmosphere and solidified to obtain a crystal.
なお、本発明の製造方法において、酸化ガドリ
ニウム（Gd2O3），酸化ルテチウム（Lu2O3）お
よび酸化ガリウム（Ga2O3）の所定量比の混合物
を不活性ガスまたは酸化性ガス雰囲気中で溶融
し、固化させて結晶を得るのは、フローテイング
法またはチヨクラルスキー法あるいはブリツジマ
ン法によつて行われる。 In the manufacturing method of the present invention, a mixture of gadolinium oxide (Gd 2 O 3 ), lutetium oxide (Lu 2 O 3 ), and gallium oxide (Ga 2 O 3 ) in a predetermined ratio is placed in an inert gas or oxidizing gas atmosphere. The crystals are obtained by melting and solidifying the crystals in the atmosphere by the floating method, the Czyochralski method, or the Bridgeman method.
本発明のガーネツト結晶は、本発明の製造方法
によつて得られ、前記一般式のｘ，ｙ，ｚが所定
の範囲にあることによつて、単相として格子定数
がビスマス置換量の大きいビスマス置換希土類鉄
ガーネツト結晶と格子不整合を起こすことのない
単結晶で得られるから、ビスマス置換量の大きい
ビスマス置換希土類鉄ガーネツト結晶を成膜結晶
に用いて磁気光学効果を向上させるようにした磁
気光学素子の結晶基板に好適に用いられる
〔実施例〕
実施例 １
ガドリニウム，ルテチウム，ガリウムの酸化物
をGd：Lu：Ga（原子比）＝24：2.3：3.3になるよ
うに調整した混合物をイリジウムルツボに入れ
1.5vol％の酸素を含む窒素雰囲気下、種結晶の回
転数を20rpm、引き上げ速度3.0mm／ｈでチヨク
ラルスキー法により結晶を育成した。得られた結
晶は、ｘ線回折および元素分折により、格子定数
ａがａ＝12.60Aで、結晶の組成がGa2.20Lu2.
41Ga3.39O12のガーネツト結晶と確認された。
The garnet crystal of the present invention is obtained by the production method of the present invention, and has a lattice constant of bismuth with a large amount of bismuth substitution as a single phase because x, y, and z of the general formula are within a predetermined range. Magneto-optics improves the magneto-optic effect by using a bismuth-substituted rare-earth iron garnet crystal with a large amount of bismuth substitution as a film-forming crystal because it can be obtained as a single crystal that does not cause lattice mismatch with the substituted rare-earth iron garnet crystal. [Example] Suitable for use as a crystal substrate of an element Example 1 A mixture of gadolinium, lutetium, and gallium oxides adjusted to have a Gd:Lu:Ga (atomic ratio) = 24:2.3:3.3 was placed in an iridium crucible. put in
Crystals were grown by the Czyochralski method in a nitrogen atmosphere containing 1.5 vol % oxygen at a seed crystal rotation speed of 20 rpm and a pulling speed of 3.0 mm/h. X-ray diffraction and elemental analysis revealed that the obtained crystal had a lattice constant a = 12.60A and a crystal composition of Ga 2 . 20 Lu 2 .
It was confirmed to be a 41 Ga 3 . 39 O 12 garnet crystal.
実施例 ２
ガドリニウム、ルテチウム、ガリウムの酸化物
をGd：Lu：Ga（原子比）＝2.6：2.0：3.4になるよ
うに調整した混合物を原料とし、フローテイング
ゾーン法により20vol％の酸素を含む窒素雰囲気
下で原料棒および種結晶の回転数を30rpm、移動
速度3.0mm／ｈで結晶を育成した。得られた結晶
は、組成がGd2.36Lu2.23Ga3.41O12で格子定数ａが
ａ＝12.61Aのガーネツト結晶であつた。Example 2 A mixture of gadolinium, lutetium, and gallium oxides adjusted to have an atomic ratio of Gd:Lu:Ga (atomic ratio) of 2.6:2.0:3.4 was used as a raw material, and nitrogen containing 20 vol% oxygen was added using the floating zone method. Crystals were grown in an atmosphere at a rotation speed of the raw material rod and seed crystal of 30 rpm and a movement speed of 3.0 mm/h. The obtained crystal was a garnet crystal with a composition of Gd 2 . 36 Lu 2 . 23 Ga 3 . 41 O 12 and a lattice constant a=12.61A.
〔発明の効果〕
以上のように、本発明の製造方法で得られる本
発明の新組成ガーネツト結晶は、磁気光学素子の
基板に従来用いられているガドリニウムガリウム
ガーネツト結晶（ａ＝12.38A）、ネオジウムガリ
ウムガーネツト結晶（ａ＝12.51A）、ガドリニウ
ムスカンジウムガリウムガーネツト結晶（ａ＝
12.56A）よりも格子定数が大きくて、フアラデ
ー回転角の量も大きいビスマス鉄ガーネツト結晶
（Bi3Fe5O12）の格子定数（12.62A）に近いから、
そのようなビスマス置換量の大きいビスマス置換
希土類鉄ガーネツト結晶を磁気光学結晶膜とする
磁気光学素子の基板に用いて格子不整合を起こす
ことなく、したがつて、光アイソレーター、光ス
イツチ、光偏光器として利用される磁気光学効果
に優れた磁気光学素子を得ることを可能にする。[Effects of the Invention] As described above, the new composition garnet crystal of the present invention obtained by the manufacturing method of the present invention is a gadolinium gallium garnet crystal (a = 12.38A) conventionally used for the substrate of a magneto-optical element, Neodymium gallium garnet crystal (a=12.51A), gadolinium scandium gallium garnet crystal (a=
12.56A), and the amount of Faraday rotation angle is also large.It is close to the lattice constant (12.62A) of bismuth iron garnet crystal (Bi 3 Fe 5 O 12 ).
Such a bismuth-substituted rare earth iron garnet crystal with a large amount of bismuth substitution can be used as a substrate for a magneto-optical element using a magneto-optic crystal film, without causing lattice mismatch, and can therefore be used in optical isolators, optical switches, and optical polarizers. This makes it possible to obtain a magneto-optical element with excellent magneto-optic effects that can be used as a magneto-optic element.
Claims (1)
０≦ｙ≦0.05，0.6≦ｚ≦1.0の範囲の数値を示す） で表されることを特徴とする磁気光学素子の基板
用ガーネツト結晶。 ２ 磁気光学素子が基板上に一般式 （Bi1-x-yRxR′y）3Fe5O12 （ただし、ｘ，ｙ，はそれぞれ０≦ｘ≦0.7，
０≦ｙ≦0.7の範囲の数値を示し、Ｒ、R′はそれ
ぞれＹ、Sc、La、Ce、Nd、Sm、Eu、Gd、Tb、
Dy、Ho、Er、Tm、Yb、Luなどの希土類元素
を表す） で表されるビスマス置換希土類鉄ガーネツト結晶
から成る磁気光学結晶膜を形成するものである特
許請求の範囲第１項記載の磁気光学素子の基板用
ガーネツト結晶。 ３ ガドリニウム，ルテチウム，ガリウムの酸化
物をGd：Lu：Ga（原子比）＝｛３（１−ｘ）＋2y｝：
（3x＋2z）：｛２（１−ｙ−ｚ）＋３｝（ただし、ｘ，
ｙ，ｚはそれぞれ０≦ｘ≦0.4，０≦ｙ≦0.05，
0.6≦ｚ≦1.0の範囲の数値をを示す）の量比で十
分混合し、得られた混合物を不活性ガスまたは酸
化性ガス雰囲気中で溶融し、固化させて結晶を得
ることを特徴とする磁気光学素子の基板用ガーネ
ツト結晶の製造方法。[Claims] 1 General formula (Gd 1-x Lu x ) 3 (Gd y Lu z Ga 1-yz ) 2 Ga 3 O 12 (where x, y, and z are each 0≦x≦0.4,
A garnet crystal for a substrate of a magneto-optical element, characterized in that the garnet crystal is represented by the following formula: 0≦y≦0.05, 0.6≦z≦1.0. 2 A magneto-optical element is mounted on a substrate using the general formula (Bi 1-xy R x R′ y ) 3 Fe 5 O 12 (where x, y, respectively, are 0≦x≦0.7,
Indicates a numerical value in the range of 0≦y≦0.7, and R and R' are respectively Y, Sc, La, Ce, Nd, Sm, Eu, Gd, Tb,
The magnetic material according to claim 1, which forms a magneto-optical crystal film consisting of a bismuth-substituted rare earth iron garnet crystal represented by (representing rare earth elements such as Dy, Ho, Er, Tm, Yb, and Lu). Garnet crystal for optical element substrates. 3 Gadolinium, lutetium, and gallium oxides as Gd:Lu:Ga (atomic ratio) = {3(1-x)+2y}:
(3x+2z): {2(1-y-z)+3} (where x,
y and z are respectively 0≦x≦0.4, 0≦y≦0.05,
(indicating a numerical value in the range of 0.6≦z≦1.0), the resulting mixture is melted in an inert gas or oxidizing gas atmosphere, and solidified to obtain crystals. A method for manufacturing a garnet crystal for a substrate of a magneto-optical element.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27908088A JPH02125223A (en) | 1988-11-04 | 1988-11-04 | Garnet crystal for substrate of magneto-optical element and production thereof |
| US07/429,455 US5043231A (en) | 1988-11-04 | 1989-10-31 | Gadolinium-lutetium-gallium garnet crystal, process for its production and substrate for magneto-optical device made thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27908088A JPH02125223A (en) | 1988-11-04 | 1988-11-04 | Garnet crystal for substrate of magneto-optical element and production thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02125223A JPH02125223A (en) | 1990-05-14 |
| JPH0424685B2 true JPH0424685B2 (en) | 1992-04-27 |
Family
ID=17606137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27908088A Granted JPH02125223A (en) | 1988-11-04 | 1988-11-04 | Garnet crystal for substrate of magneto-optical element and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02125223A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4860368B2 (en) * | 2006-06-27 | 2012-01-25 | 富士フイルム株式会社 | Garnet-type compounds and methods for producing the same |
-
1988
- 1988-11-04 JP JP27908088A patent/JPH02125223A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02125223A (en) | 1990-05-14 |
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