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JPH0426798B2 - - Google Patents
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JPH0426798B2 - - Google Patents

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Publication number
JPH0426798B2
JPH0426798B2 JP61183733A JP18373386A JPH0426798B2 JP H0426798 B2 JPH0426798 B2 JP H0426798B2 JP 61183733 A JP61183733 A JP 61183733A JP 18373386 A JP18373386 A JP 18373386A JP H0426798 B2 JPH0426798 B2 JP H0426798B2
Authority
JP
Japan
Prior art keywords
alumina
dielectric constant
glass
borosilicate glass
green sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61183733A
Other languages
Japanese (ja)
Other versions
JPS6340397A (en
Inventor
Shigenori Aoki
Yoshihiko Imanaka
Nobuo Kamehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18373386A priority Critical patent/JPS6340397A/en
Publication of JPS6340397A publication Critical patent/JPS6340397A/en
Publication of JPH0426798B2 publication Critical patent/JPH0426798B2/ja
Granted legal-status Critical Current

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  • Production Of Multi-Layered Print Wiring Board (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔概要〕 シリコン半導体ICと熱膨張係数が近似し、ま
た誘電率が少ない基板材料として、硼珪酸ガラス
にアルミナ粉末を5〜10重量%の範囲に添加した
ものを原料とし、これを使用してグリンシートを
作ると共に積層し、加圧焼成して得るガラスセラ
ミツク多層回路基板。 〔産業上の利用分野〕 本発明はシリコンICの搭載に適したガラスセ
ラミツク基板の構成に関する。 大量の情報を迅速に処理する情報処理技術の進
歩は著しい。 すなわち、情報処理装置の主要部を占める半導
体装置は単位素子の小形化による大容量化が進
み、従来のICやLSIよりも一段と素子数の大きな
VLSIが実用化されている。 また、パツシベーシヨン技術の進歩により、半
導体チツプを配線基板に直接に装着することが可
能になり、ダイボンデイングやフリツプチツプボ
ンデイングが行われている。 そして多数のかかる半導体チツプを配線基板上
に密に配置して装着しているが、個々の半導体チ
ツプに設けられている端子数が多いことから、こ
れを搭載する配線基板に形成される導体線路の数
は膨大となり、必然的に多層配線構造をとること
になる。 一方、動作時における半導体チツプの電力消費
量も数Wに及ぶことから多数の半導体チツプを搭
載した多層配線基板の発熱量も膨大となり、その
ためセラミツクなどの耐熱性絶縁材料が用いられ
ている。 本発明はかかる多層配線基板材料の組成に関す
るものである。 〔従来の技術〕 IC、LSIなどの半導体チツプを搭載する多層配
線基板の構成材料としてはガラスセラミツクやア
ルミナ(α−Al2O3)などのセラミツスクが使用
されている。 ここで、セラミツクスが用いられる理由は耐熱
性が優れ、また熱膨張係数が殆どの半導体チツプ
が形成されているシリコン(Si)に適合している
ことによる。 すなわち、ポリイミドやエポキシなど合成樹脂
からなるプリント配線基板の熱膨張係数が10-5
℃台の値であり、一方Siの熱膨張係数が3.5×
10-6/℃と大きく異なるのに対し、セラミツクス
は10-6/℃台と近似しており、そのためにチツプ
の直接搭載が可能である。 次に、多層配線基板としてアルミナよりもガラ
スセラミツクスが多く用いられているが、この理
由はアルミナの融点は2015℃と高く、焼成温度と
して1800℃程度が必要であり、配線パターンを印
刷したグリンシートを焼成する場合に、金(Au)
や銅(Cu)など導電率の優れた材料の融点は焼
成温度より低く、そのためかかる金属材料を使用
することができない。 一方、ガラスセラミツクスは焼成温度を1000℃
以下にとることができ、従つて上記の金属からな
る導体パターンを形成することができる。 これらのことから、多数の半導体チツプを装着
して使用する多層配線基板は、ガラスセラミツク
スを用いてなるグリンシートにAuやCuペースト
などをスクリーン印刷して配線パターンを形成
し、これを積層して一体化した後、焼成して作ら
れている。 ここで、代表的なガラスセラミツクスは硼珪酸
ガラスにアルミナを添加したものから構成されて
おり、微結晶の集合体からなるために機械的強度
は著しく改良されているものゝ、誘電率が硼珪酸
ガラスよりも増加していると云う問題がある。 すなわち、情報処理の高速化により信号の周波
数は光にまで及んでいるが、このように高速な電
気信号を処理する電子回路が形成されている多層
基板は電気信号の遅延時間τができるだけ少な
く、電子回路の特性インピーダンスが大きく、ま
た多層配線間の漏話が少ないことが必要である
が、そのためには次式から明らかなように使用材
料の誘電率εが少ないことが必要である。 τ≒3.33ε1/2(n秒/m) Z0=60/ε1/2・lo5.98b/π(0.8w+t) 但し、bは基板の厚さ wは配線パターンの幅 tは配線パターンの厚さ 然し、従来のガラスセラミツクスは硼珪酸ガラ
スに50重量%程度のアルミナを含有して構成され
ているので誘電率が5.5〜5.6と大きく、この低減
化が要望されていた。 〔発明が解決しようとする問題点〕 以上記したように高速信号を処理する電子回路
を形成するセラミツク多層基板は低誘電率のガラ
スセラミツクスを用いて形成することが必要であ
るが、この場合にアルミナの構成比をどのように
保つて多層回路基板を形成するかが課題である。 〔問題点を解決するための手段〕 上記の問題は硼珪酸ガラス粉末とアルミナ粉末
とを主成分とし、この成分にバインダと溶剤とを
加え、混練してグリーンシートを作り、このグリ
ーンシートに導体ペーストを印刷して導体パター
ンを作り、このグリーンシートを積層して後、加
圧し焼成してなる多層回路基板において、硼珪酸
ガラス粉末に対するアルミナの添加量を5〜10重
量%としたことを特徴としてガラスセラミツク多
層回路基板を構成することにより解決することが
できる。 〔作用〕 高速の電気信号を処理する電子回路が形成され
ている多層回路基板の必要条件は、 誘電率εの低い材料からなること、 熱膨張係数がSiと適合していること、 機械的強度が優れていること、 グリンシートの焼成温度が1000℃以下で導体
ペーストの焼成条件と適合していること、 などである。 ここで、先に記しように従来はアルミナ含有量
が約50%であるために誘電率が5.5〜6.5と高いも
のが使われている。 そこで誘電率を下げるためにはアルミナの含有
量を上記の条件を満たす範囲で減らしてゆけばよ
い。 すなわち、アルミナの誘電率εは10であり、一
方硼珪酸ガラスの誘電率は構成材料の組成比によ
り異なるものゝ4.1〜4.8である。 そこで、両者の量比により複合誘電率は決ま
り、アルミナの添加量が少なくなるに従つて誘電
率は低下してゆき、最終的には硼珪酸ガラスの誘
電率となる。 また、熱膨張係数も添加量が減るに従つて直線
的に変化し硼珪酸ガラスの熱膨張係数に近づく筈
である。 然し、アルミナを含む硼珪酸ガラスを約1000℃
で熱処理するとアルミナの添加量が約5%以下に
なると異常に増加することが判つた。 第1図および第2図は表に示す組成の原料から
なる硼珪酸ガラスにアルミナを添加したガラスセ
ラミツクスの熱膨張係数と誘電率との関係を示す
ものである。
[Summary] Borosilicate glass with alumina powder added in the range of 5 to 10% by weight is used as a substrate material with a thermal expansion coefficient similar to that of silicon semiconductor ICs and a low dielectric constant. A glass-ceramic multilayer circuit board obtained by making green sheets, laminating them, and firing them under pressure. [Industrial Application Field] The present invention relates to the structure of a glass ceramic substrate suitable for mounting a silicon IC. Information processing technology that rapidly processes large amounts of information has made remarkable progress. In other words, semiconductor devices, which make up the main part of information processing equipment, are increasing in capacity due to miniaturization of unit elements, and the number of elements is even larger than that of conventional ICs and LSIs.
VLSI has been put into practical use. Further, advances in packaging technology have made it possible to directly attach semiconductor chips to wiring boards, and die bonding and flip-chip bonding are now being used. A large number of such semiconductor chips are densely arranged and mounted on a wiring board, but since each semiconductor chip has a large number of terminals, conductor lines are formed on the wiring board on which it is mounted. The number of devices becomes enormous, and a multilayer wiring structure is inevitably required. On the other hand, since the power consumption of a semiconductor chip during operation reaches several watts, the amount of heat generated by a multilayer wiring board on which a large number of semiconductor chips are mounted is also enormous, and therefore heat-resistant insulating materials such as ceramics are used. The present invention relates to the composition of such a multilayer wiring board material. [Prior Art] Ceramics such as glass ceramics and alumina (α-Al 2 O 3 ) are used as constituent materials for multilayer wiring boards on which semiconductor chips such as ICs and LSIs are mounted. The reason why ceramics are used here is that they have excellent heat resistance and a coefficient of thermal expansion that is compatible with silicon (Si), which is used to form most semiconductor chips. In other words, the coefficient of thermal expansion of a printed wiring board made of synthetic resin such as polyimide or epoxy is 10 -5 /
The value is on the order of ℃, while the thermal expansion coefficient of Si is 3.5×
In contrast, the temperature of ceramics is close to 10 -6 / ℃, which makes it possible to directly mount chips. Next, glass ceramics are more commonly used than alumina for multilayer wiring boards, and the reason for this is that alumina has a high melting point of 2015°C, and requires a firing temperature of about 1800°C, and green sheets with wiring patterns are printed on them. When firing gold (Au)
The melting point of materials with excellent electrical conductivity, such as copper and copper (Cu), is lower than the firing temperature, so such metal materials cannot be used. On the other hand, the firing temperature for glass ceramics is 1000℃.
Accordingly, a conductor pattern made of the above-mentioned metal can be formed. For these reasons, multilayer wiring boards that are used with a large number of semiconductor chips installed are made by screen-printing Au or Cu paste on green sheets made of glass ceramics to form wiring patterns, and then laminating these. After being integrated, it is fired. Typical glass-ceramics are made of borosilicate glass with alumina added, and because they are composed of aggregates of microcrystals, their mechanical strength is significantly improved. There is a problem that the amount of glass is increasing more than that of glass. In other words, as the speed of information processing increases, the frequency of signals has reached the level of light, but the multilayer substrate on which electronic circuits that process high-speed electrical signals are formed has a delay time τ of electrical signals as small as possible. It is necessary for the characteristic impedance of an electronic circuit to be large and for crosstalk between multilayer wiring to be small. To achieve this, it is necessary that the dielectric constant ε of the material used be small, as is clear from the following equation. τ≒3.33ε 1/2 (n seconds/m) Z 0 = 60/ε 1/2・l o 5.98b/π (0.8w+t) However, b is the thickness of the board, w is the width of the wiring pattern, t is the wiring Pattern Thickness However, since conventional glass ceramics are composed of borosilicate glass containing about 50% by weight of alumina, the dielectric constant is as high as 5.5 to 5.6, and there has been a desire to reduce this. [Problems to be Solved by the Invention] As described above, it is necessary to form a ceramic multilayer substrate that forms an electronic circuit that processes high-speed signals using glass ceramics with a low dielectric constant. The challenge is how to maintain the composition ratio of alumina to form a multilayer circuit board. [Means for solving the problem] The above problem is solved by using borosilicate glass powder and alumina powder as the main ingredients, adding a binder and a solvent to these ingredients, kneading them to make a green sheet, and adding a conductor to this green sheet. A multilayer circuit board made by printing a paste to make a conductor pattern, laminating the green sheets, applying pressure and firing, is characterized in that the amount of alumina added to the borosilicate glass powder is 5 to 10% by weight. This problem can be solved by constructing a glass-ceramic multilayer circuit board. [Function] The requirements for a multilayer circuit board on which electronic circuits that process high-speed electrical signals are formed are that it be made of a material with a low dielectric constant ε, that its coefficient of thermal expansion is compatible with that of Si, and that it has good mechanical strength. The firing temperature of the green sheet is below 1000℃, which is compatible with the firing conditions of the conductive paste. Here, as mentioned earlier, materials with a high dielectric constant of 5.5 to 6.5 have been used because the alumina content is about 50%. Therefore, in order to lower the dielectric constant, the alumina content should be reduced within the range that satisfies the above conditions. That is, the dielectric constant ε of alumina is 10, while the dielectric constant of borosilicate glass is 4.1 to 4.8, depending on the composition ratio of the constituent materials. Therefore, the composite dielectric constant is determined by the quantitative ratio of the two, and as the amount of alumina added decreases, the dielectric constant decreases, and finally reaches the dielectric constant of borosilicate glass. Furthermore, the coefficient of thermal expansion should change linearly as the amount added decreases, approaching that of borosilicate glass. However, when borosilicate glass containing alumina is heated to about 1000℃,
It was found that when the amount of alumina added was less than about 5%, the amount of alumina increased abnormally when heat treated. FIGS. 1 and 2 show the relationship between the thermal expansion coefficient and the dielectric constant of glass ceramics prepared by adding alumina to borosilicate glass made of raw materials having the composition shown in the table.

〔実施例〕〔Example〕

組成が重量比でSiO2が70%、B2O3が26%、
Al2O3が1%、Na2Oが1.5%、K2Oが1.5%からな
る硼珪酸ガラス粉末95重量部に、粒径が3μmの
Al2O3粉末を5重量部を加え、これにバインダと
してポリビニルブチラール(略称PVB)を10重
量部と溶剤としてアセトンを110重量部を加えて
ボールミルを用いて良く混合した後、ドクタブレ
ード法により厚さが300μmのグリンシートを形
成した。 このグリンシートを100mm角に打ち抜くと共に
スルーホールを孔開けした後、Cuからなる導体
ペーストをスクリーン印刷して配線パターンを形
成し、これを位置合わせを行つて10層積層し、
130℃の温度でスレスして一体化してから窒素
(N2)気流中で1000℃の温度で4時間に亙つて焼
成し多層セラミツク回路基板を形成した。 測定の結果、かかる基板の誘電率は4.2と小さ
く、また熱膨張係数は3×10-6/℃とSi基板に近
い値を得ることができた。 〔発明の効果〕 以上記したように本発明の実施により熱膨張係
数がSi基板に近く、また誘電率の少ない高速信号
処理に適した多層回路基板の形成が可能となる。
The composition is 70% SiO 2 and 26% B 2 O 3 by weight.
95 parts by weight of borosilicate glass powder consisting of 1% Al 2 O 3 , 1.5% Na 2 O, and 1.5% K 2 O was added with 3 μm particle size.
Add 5 parts by weight of Al 2 O 3 powder, add 10 parts by weight of polyvinyl butyral (abbreviated as PVB) as a binder and 110 parts by weight of acetone as a solvent, mix well using a ball mill, and then mix using a doctor blade method. A green sheet with a thickness of 300 μm was formed. After punching out this green sheet into 100 mm squares and drilling through holes, we screen printed a conductive paste made of Cu to form a wiring pattern, aligned it, and stacked 10 layers.
They were bonded and integrated at a temperature of 130° C. and then fired in a nitrogen (N 2 ) stream at a temperature of 1000° C. for 4 hours to form a multilayer ceramic circuit board. As a result of the measurements, the dielectric constant of this substrate was as small as 4.2, and the coefficient of thermal expansion was 3×10 -6 /°C, which was close to that of the Si substrate. [Effects of the Invention] As described above, by carrying out the present invention, it is possible to form a multilayer circuit board that has a thermal expansion coefficient close to that of a Si substrate and has a low dielectric constant and is suitable for high-speed signal processing.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は熱膨張係数とアルミナ添加量との関係
図、第2図は誘電率とアルミナ添加量との関係
図、である。
FIG. 1 is a diagram showing the relationship between the coefficient of thermal expansion and the amount of alumina added, and FIG. 2 is a diagram showing the relationship between the dielectric constant and the amount of alumina added.

Claims (1)

【特許請求の範囲】[Claims] 1 硼珪酸ガラス粉末とアルミナ粉末とを主成分
とし、該成分にバインダと溶剤とを加え、混練し
てグリーンシートを作り、該グリーンシートに導
体ペーストを印刷して導体パターンを作り、該グ
リーンシートを積層して後、加圧し焼成してなる
多層回路基板において、前記硼珪酸ガラス粉末に
対するアルミナの添加量を5〜10重量%としたこ
とを特徴とするガラスセラミツク多層回路基板。
1 The main ingredients are borosilicate glass powder and alumina powder, a binder and a solvent are added to the ingredients, kneaded to make a green sheet, a conductive paste is printed on the green sheet to create a conductive pattern, and the green sheet is 1. A glass-ceramic multilayer circuit board formed by laminating, pressurizing and firing, wherein the amount of alumina added to the borosilicate glass powder is 5 to 10% by weight.
JP18373386A 1986-08-05 1986-08-05 Glass ceramic multilayer circuit board Granted JPS6340397A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18373386A JPS6340397A (en) 1986-08-05 1986-08-05 Glass ceramic multilayer circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18373386A JPS6340397A (en) 1986-08-05 1986-08-05 Glass ceramic multilayer circuit board

Publications (2)

Publication Number Publication Date
JPS6340397A JPS6340397A (en) 1988-02-20
JPH0426798B2 true JPH0426798B2 (en) 1992-05-08

Family

ID=16141019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18373386A Granted JPS6340397A (en) 1986-08-05 1986-08-05 Glass ceramic multilayer circuit board

Country Status (1)

Country Link
JP (1) JPS6340397A (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178752A (en) * 1983-03-30 1984-10-11 Hitachi Ltd Multilayer interconnection substrate
NL8301604A (en) * 1983-05-06 1984-12-03 Philips Nv DIELECTRIC GLASS IN MULTI-LAYER CIRCUITS AND THOSE FITTED WITH THICK FILM CIRCUITS.
JPS6030196A (en) * 1983-07-28 1985-02-15 富士通株式会社 Method of producing multilayer circuit board

Also Published As

Publication number Publication date
JPS6340397A (en) 1988-02-20

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