JPH0428099B2 - - Google Patents
Info
- Publication number
- JPH0428099B2 JPH0428099B2 JP56113310A JP11331081A JPH0428099B2 JP H0428099 B2 JPH0428099 B2 JP H0428099B2 JP 56113310 A JP56113310 A JP 56113310A JP 11331081 A JP11331081 A JP 11331081A JP H0428099 B2 JPH0428099 B2 JP H0428099B2
- Authority
- JP
- Japan
- Prior art keywords
- exposed
- film
- point
- holes
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Projection-Type Copiers In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
本発明は投影露光装置の改良に関し、特に帯状
フイルムの露光に好適の装置に関するものであ
る。
帯状の金属フイルムにICリードフレームを形
成するためフオトエツチング手段が良く用いられ
ている。この手段に用いる露光装置は従来、第1
図に概念的に示すように構成されている。即ち、
該装置においては両面にフオトレジストを塗布し
た金属フイルム1を角形環状の焼枠2,3で両面
から挟んで光軸に垂直な平坦面とし、表及び裏用
の図示しないフオトマスクの像をF1点にあるレ
ンズ及びF2点にあるレンズを介してフイルム1
上に結像露光するようになつている。このような
装置に適用するフイルムは通常第2図に示すよう
にフイルム1の両縁に一定間隔で孔4が形成され
ており、この孔4は露光時の位置合せ、フイルム
駆動等に用いられる。ところで、このような孔4
の形成にはプレス打抜きで行なうのが一般的であ
るが、孔4の単独の寸法精度及び孔間隔の精度に
一定の限度がある。このため孔4の間隔が第2図
に示す位置合せピン51〜53,54〜56のそれぞ
れの間隔より大きく形成されている場合、フイル
ム1は焼枠2及び3の自由な空間にしわ寄せさ
れ、例えばピン51と53,54と56の間でしわ寄
せされると第3図に示すように一方に張り出した
形状をとることがある。このように平坦度の不良
なフイルムに露光すると結像位置にずれを生じ、
本来一致する筈の表裏の結像パターンが一致しな
いこととなる。表裏のパターンが一致しないとエ
ツチングした場合、エツチング断面が垂直になら
ないのでパターンが微細になるに従い、この欠点
は致命的となる。このずれの大きさをモデルによ
り試算してみると次のようになる。
第4図において、点Aは例えば第2図における
ピン51の中心、点Bは同じくピン53の中心とす
る。
今、ピン51及び53の間隔をLmmとし、これら
のピンに相当する孔4の間隔が△Lmmだけ大きい
とき、フイルム1が近似的にAPBように湾曲す
るとする。そしてABの中心をOとすると、P点
におけるO点からの張出し距離△Hは次式で表わ
される。
(△H)2+(L/2)2=(L+△L/2)2
から
The present invention relates to an improvement in a projection exposure apparatus, and more particularly to an apparatus suitable for exposing a film strip. Photoetching is often used to form an IC lead frame on a strip-shaped metal film. Conventionally, the exposure device used for this means is
It is configured as conceptually shown in the figure. That is,
In this device, a metal film 1 coated with photoresist on both sides is sandwiched between square and annular printing frames 2 and 3 to form a flat surface perpendicular to the optical axis, and images of photomasks (not shown) for the front and back sides are captured at F 1 Film 1 is passed through the lens at point F2 and the lens at point F2 .
It is designed to expose an image on the top. Films used in such devices usually have holes 4 formed at regular intervals on both edges of the film 1, as shown in FIG. 2, and these holes 4 are used for positioning during exposure, driving the film, etc. . By the way, such a hole 4
is generally formed by press punching, but there are certain limits to the dimensional accuracy of the individual holes 4 and the accuracy of the hole spacing. Therefore, if the distance between the holes 4 is larger than the distance between the alignment pins 5 1 to 5 3 and 5 4 to 5 6 shown in FIG. When it is wrinkled, for example between pins 5 1 and 5 3 or 5 4 and 5 6 , it may take on a shape that bulges to one side as shown in FIG. When a film with poor flatness is exposed in this way, the image formation position shifts,
The image formation patterns on the front and back sides, which should originally match, do not match. If etching is performed if the patterns on the front and back sides do not match, the etched cross section will not be vertical, and as the pattern becomes finer, this defect becomes fatal. A trial calculation of the magnitude of this deviation using a model is as follows. In FIG. 4, point A is, for example, the center of pin 5 1 in FIG. 2, and point B is the center of pin 5 3 in the same manner. Now, suppose that the distance between the pins 5 1 and 5 3 is Lmm, and when the distance between the holes 4 corresponding to these pins is larger by ΔLmm, the film 1 curves approximately as APB. If the center of AB is O, then the overhanging distance ΔH at point P from point O is expressed by the following equation. (△H) 2 + (L/2) 2 = (L+△L/2) From 2
【式】
そこでO点からrだけ離れたAB上のR点に結
像すべきパターンにより露光すると実際はF1側
のパターンはQ1に結像し、F2側のパターンはQ2
に結像する。第5図にその部分を拡大して示す。
そしてR点を通る垂線が直線PBと交わる点をQ
とすると、QP間の距離△hは次式で表わされる。
△h=△H・(1−2r/L)
点Q1及びQ2から直線OBに下ろした垂線の交点
をR1及びR2とすればQ点からの点Q1及びQ2のず
れ△q1,△q2はそれぞれ点Rから点R1及びR2の
ずれ△r1,△r2に近似で、その値を△rに近似と
することができる。
この△rは第4図の三角形F1OR(F2OR)と三
角形Q1R1R(Q2R2R)の相似から
OF1/r=Q1R1/△r1≒△h/△r
若くはOF2/r=Q2R2/△r2≒△h/△rとなり
△r=△h・r
OF1
若しくは△r=△h・r/OF2となる。従つて、例
えばL=40mm、△L=0.005mm、OF1(OF2)=100
mmとすると△h=0.316mmとなり、△h,△rは
rの値0、5、10、15、20mmに対して次のように
なる。[Formula] Therefore, when exposing with a pattern to be imaged at point R on AB, which is r away from point O, the pattern on the F 1 side will actually be imaged on Q 1 , and the pattern on the F 2 side will be imaged on Q 2
image is formed. FIG. 5 shows an enlarged view of that part.
Then, the point where the perpendicular line passing through point R intersects with straight line PB is Q
Then, the distance Δh between QPs is expressed by the following equation. △h=△H・(1-2r/L) If the intersection points of perpendicular lines drawn from points Q 1 and Q 2 to straight line OB are R 1 and R 2 , then the deviation of points Q 1 and Q 2 from point Q is △ q 1 and Δq 2 are approximated to the deviations Δr 1 and Δr 2 from point R to points R 1 and R 2 , respectively, and their values can be approximated to Δr. This △r is obtained from the similarity of triangle F 1 OR (F 2 OR) and triangle Q 1 R 1 R (Q 2 R 2 R) in Figure 4. OF 1 /r=Q 1 R 1 /△r 1 ≒△h /△r Younger version becomes OF 2 /r=Q 2 R 2 /△r 2 ≒△h/△r, and △r=△h・r OF 1 or △r=△h・r/OF 2 . Therefore, for example, L = 40 mm, △L = 0.005 mm, OF 1 (OF 2 ) = 100
If mm, Δh=0.316 mm, and Δh and Δr are as follows for r values of 0, 5, 10, 15, and 20 mm.
【表】
この結果を第6図に示す。図において横軸は点
Rの位置であり、縦軸はOR1−OR、又はOR2−
ORの値(μ)を示す。この図からフイルム1が
APBのようにたわむ時、結像の位置ずれは周辺
に向うにつれて一旦増加し、後減少する傾向を認
めることができる。
即ち、上記の試算によれば最大のずれはr=10
mmの所で、約30ミクロンに達する。従つてパター
ンのライン幅が30ミクロンのとき、30ミクロンも
結像の位置がずれたのではエツチングした時、本
来第7図Aのようになるべきものが、第7図Bの
ような断面となり正常なエツチング製品を得るこ
とができないことは明らかである。しかも、上記
試算に用いたピン孔4の形成誤差△L=0.005mm
は少な目の数値であり、実際には最大で数十ミク
ロンになることがある。このため微細なパターン
を形成する位置に制約があり、パターン設計上の
大きな障害になつていた。
本発明は、このような従来の欠点を除去するた
め、被露光材の厚さより僅かに大きい隙間をもつ
ように配置され、かつ露光面より大きい平板を取
付け、その少くとも露光側を透光性て平板間に被
露光材を挟持して光軸に垂直になるように備えて
結像部とし、その結像の位置ずれを極力小さくす
るようにしたものである。以下本発明の一実施例
を図面により詳細に説明する。
第8図は本発明投影露光装置における結像部の
一実施例を示す断面図である。図に示すように、
この結像部は露光面よりやや大きい透光性の平板
8,9が被露光材となるフイルム1の厚さより僅
かに大きい隙間をもつように、かつ光軸に垂直に
なるように配置されており、この平板8,9はそ
れぞれ焼枠6,7にて支持され、焼枠7には隙間
調整兼露光位置決め用ピン5が設けられている。
このような構成の結像部を従来の焼枠の代りに用
いれば従来のものと全く同様の操作で使用でき
る。なお、平板8,9は透明であれば何でも良い
が、コスト的にはガラスが最も好ましい。また、
透光性平板の支持方法は特に限定されないが、繰
り返し使用する間に塵の付着が避けられないので
着脱可能にすると良い。
2枚の平板8,9の間の隙間は少なくとも被露
光材1の厚さより大きくする必要があるが好まし
くい隙間の大きさは被露光材の厚さ+100ミクロ
ン程度でよい。
このようにすると被露光材の湾曲を小さく矯正
できるので、△Hが小さくなり、従つて△h及び
△rも小さくすることができる。一方隙間をおか
ず平板が被露光材に密着した場合は次のような問
題が生ずる。
即ち、本発明のような投影露光装置は駆動用ス
プロケツトが孔4に噛み込んだ状態で金属フイル
ム1を搬送するが、露光精度を確保するためには
スプロケツトと孔4が隙間なく正確に噛み込ませ
なければならない。しかし何らかの原因によつて
この正確な噛み込みが阻害されると金属フイルム
1には歪みやしわ等が発生する。この場合金属フ
イルムに平板を密着させておくとこの歪みやしわ
が増長されて結像位置でのずれの原因となる。本
発明では金属フイルム1に対して平板8,9を僅
かな隙間をもつて設けたため、この隙間で前記し
た金属フイルムの歪みやしわを吸収し結像位置で
の露光精度を大幅に向上できた。例えば露光範囲
40mm×40mm、ガラス板の隙間が170ミクロンであ
る結像部材を焦点距離100mmの投影露光装置に取
付け、両面にフオトレジストを塗布した70μ厚の
銅テープにテストパターンを連続して露光した
後、エツチングを施し、結像位置ずれを測定した
結果、表裏像のずれは最大で10μ、平均5μ以内に
納まることが確められた。なお、本発明によらな
い場合のずれは最大40μ、平均20μであつた。
以上の説明は、主に両面露光の場合について説
明したが、片面露光であつても有効に作用する。
即ち、片面露光の場合は表裏の結像位置ずれは無
いが、設計したパターンからずれて露光されエツ
チングされた場合不都合を生じることがある。し
かし本発明によればこのような不都合をも解消す
ることができる。この場合、結像部の少なくとも
露光側の平板を透光性にすれば良い。また、他方
の平板は単に焼台として用いられるので透光性、
不透光性の何れでもよい。
以上詳細に説明したように、本発明によれば結
像の位置ずれが大幅に改善された結果エツチング
パターン設計上の障害が解消し、任意のパターン
が精度良くフオトエツチングできる効果がある。[Table] The results are shown in Figure 6. In the figure, the horizontal axis is the position of point R, and the vertical axis is OR 1 - OR or OR 2 -
Indicates the value of OR (μ). From this figure, film 1 is
When deflecting like an APB, it can be seen that the positional deviation of the image formation increases once toward the periphery and then decreases. That is, according to the above calculation, the maximum deviation is r = 10
mm, it reaches about 30 microns. Therefore, if the line width of the pattern is 30 microns, if the imaging position is shifted by 30 microns, the cross section that should be shown in Figure 7A when etched will become the one shown in Figure 7B. It is clear that a normal etching product cannot be obtained. Moreover, the formation error of pin hole 4 used in the above calculation △L = 0.005 mm
is a small number; in reality, it can be up to several tens of microns. For this reason, there are restrictions on the positions where fine patterns can be formed, which has been a major obstacle in pattern design. In order to eliminate such conventional drawbacks, the present invention installs a flat plate arranged with a gap slightly larger than the thickness of the material to be exposed and larger than the exposed surface, and makes at least the exposed side transparent. The material to be exposed is sandwiched between flat plates and arranged perpendicular to the optical axis to form an imaging section, and the positional deviation of the imaging is minimized. An embodiment of the present invention will be described in detail below with reference to the drawings. FIG. 8 is a sectional view showing an embodiment of the imaging section in the projection exposure apparatus of the present invention. As shown in the figure,
In this imaging section, transparent flat plates 8 and 9, which are slightly larger than the exposure surface, are arranged so as to have a gap slightly larger than the thickness of the film 1 to be exposed, and to be perpendicular to the optical axis. The flat plates 8 and 9 are supported by printing frames 6 and 7, respectively, and the printing frame 7 is provided with a pin 5 for gap adjustment and exposure positioning.
If an imaging section having such a configuration is used in place of a conventional printing frame, it can be used in exactly the same manner as a conventional printing frame. Incidentally, the flat plates 8 and 9 may be made of any material as long as they are transparent, but glass is most preferable in terms of cost. Also,
The method of supporting the light-transmitting flat plate is not particularly limited, but it is preferable to make it removable since it is unavoidable that dust will adhere to it during repeated use. The gap between the two flat plates 8 and 9 needs to be at least larger than the thickness of the material to be exposed 1, but the preferred size of the gap is about 100 microns plus the thickness of the material to be exposed. In this way, the curvature of the exposed material can be corrected to a small degree, so ΔH becomes small, and therefore Δh and Δr can also be made small. On the other hand, if the flat plate comes into close contact with the exposed material without leaving a gap, the following problem will occur. That is, the projection exposure apparatus of the present invention transports the metal film 1 with the drive sprocket biting into the hole 4, but in order to ensure exposure accuracy, it is necessary to make sure that the sprocket and the hole 4 are accurately bitten without any gaps. I have to let it happen. However, if this accurate biting is inhibited for some reason, distortions, wrinkles, etc. will occur in the metal film 1. In this case, if the flat plate is brought into close contact with the metal film, the distortions and wrinkles will increase and cause a shift in the imaging position. In the present invention, since the flat plates 8 and 9 are provided with a slight gap between them relative to the metal film 1, this gap absorbs the distortion and wrinkles of the metal film described above, and the exposure accuracy at the imaging position can be greatly improved. . For example, exposure range
An imaging member measuring 40 mm x 40 mm with a gap of 170 microns between glass plates was attached to a projection exposure device with a focal length of 100 mm, and a test pattern was continuously exposed to a 70 μ thick copper tape coated with photoresist on both sides. As a result of performing etching and measuring the image formation position deviation, it was confirmed that the deviation between the front and back images was 10μ at maximum, and within 5μ on average. In addition, the deviation in the case not according to the present invention was 40 μ at the maximum and 20 μ on average. The above explanation has mainly been given for the case of double-sided exposure, but it also works effectively even for single-sided exposure.
That is, in the case of single-sided exposure, there is no deviation in the imaging position between the front and back sides, but if the pattern is exposed and etched out of alignment with the designed pattern, problems may occur. However, according to the present invention, such inconveniences can also be overcome. In this case, at least the flat plate on the exposure side of the imaging section may be made transparent. In addition, since the other flat plate is simply used as a baking table, it is transparent and
It may be opaque or non-transparent. As described in detail above, according to the present invention, the positional deviation of the image formation is greatly improved, and as a result, the obstacles in etching pattern design are eliminated, and an arbitrary pattern can be photo-etched with high accuracy.
第1図は従来の投影露光装置を示す概念的構成
図、第2図は同じくその結像部の平面図、第3図
は同じくその断面図、第4図は第3図における結
像状態の説明図、第5図は第4図の要部拡大図、
第6図は第4図における結像位置ずれ状態の一例
を示す説明図、第7図Aは結像位置ずれのないエ
ツチング状態を示す断面図、Bは結像位置ずれし
たエツチング状態を示す断面図、第8図は本発明
投影露光装置における結像部の一例を示す断面図
である。
1……被露光材(フイルム)、5……隙間調整
兼露光位置決め用ピン、6,7……焼枠、8,9
……透光性の平板。
Fig. 1 is a conceptual configuration diagram showing a conventional projection exposure apparatus, Fig. 2 is a plan view of its imaging section, Fig. 3 is a sectional view thereof, and Fig. 4 shows the imaging state in Fig. 3. Explanatory diagram, Figure 5 is an enlarged view of the main part of Figure 4,
FIG. 6 is an explanatory diagram showing an example of the image formation position deviation state in FIG. 8 are cross-sectional views showing an example of the imaging section in the projection exposure apparatus of the present invention. 1... Material to be exposed (film), 5... Pin for gap adjustment and exposure positioning, 6, 7... Printing frame, 8, 9
...Translucent flat plate.
Claims (1)
フイルム駆動用の孔を有する被露光材を、その孔
を位置合せ用としてフイルムの両面よりピンを介
して焼枠で挟持し、その露光面を光軸に垂直にな
るように備えて結像部とする露光装置において、
両焼枠には露光面より大きい平板を取付け、その
少なくとも露光側を透光性とし、ピンを介して被
露光材を挟持したとき、これら平板間にフイルム
の厚さより僅かに大きい隙間をもたせるようにし
た投影露光装置。1. An exposed material having holes for driving the film formed at regular intervals on both edges of a strip-shaped film is held between printing frames using pins from both sides of the film for positioning the holes, and the exposed surface is In an exposure device that is provided perpendicular to the optical axis and serves as an imaging section,
A flat plate larger than the exposed surface is attached to both printing frames, and at least the exposed side thereof is made translucent, so that when the material to be exposed is held via a pin, there is a gap slightly larger than the thickness of the film between these flat plates. projection exposure equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56113310A JPS5814839A (en) | 1981-07-20 | 1981-07-20 | Projecting exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56113310A JPS5814839A (en) | 1981-07-20 | 1981-07-20 | Projecting exposure device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5814839A JPS5814839A (en) | 1983-01-27 |
| JPH0428099B2 true JPH0428099B2 (en) | 1992-05-13 |
Family
ID=14608989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56113310A Granted JPS5814839A (en) | 1981-07-20 | 1981-07-20 | Projecting exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5814839A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4631133A (en) * | 1984-09-13 | 1986-12-23 | Axelrod R & D, Inc. | Waste treatment device and method using microwaves |
| JPS6490099A (en) * | 1987-10-01 | 1989-04-05 | Kaneyuki Suzuki | Night soil treating device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5114931Y2 (en) * | 1971-03-18 | 1976-04-20 | ||
| JPS563702Y2 (en) * | 1974-03-30 | 1981-01-27 | ||
| JPS513621A (en) * | 1974-06-28 | 1976-01-13 | Shigeru Usami | Reriifusakuseihoho |
| JPS5636179U (en) * | 1979-08-28 | 1981-04-07 | ||
| JPS5667984A (en) * | 1979-11-09 | 1981-06-08 | Fujitsu Ltd | Method of printing printed board |
-
1981
- 1981-07-20 JP JP56113310A patent/JPS5814839A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5814839A (en) | 1983-01-27 |
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