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JPH0430133B2 - - Google Patents
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JPH0430133B2 - - Google Patents

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Publication number
JPH0430133B2
JPH0430133B2 JP57182168A JP18216882A JPH0430133B2 JP H0430133 B2 JPH0430133 B2 JP H0430133B2 JP 57182168 A JP57182168 A JP 57182168A JP 18216882 A JP18216882 A JP 18216882A JP H0430133 B2 JPH0430133 B2 JP H0430133B2
Authority
JP
Japan
Prior art keywords
shadow mask
hole
etching
film
mask material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57182168A
Other languages
Japanese (ja)
Other versions
JPS5973833A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP18216882A priority Critical patent/JPS5973833A/en
Publication of JPS5973833A publication Critical patent/JPS5973833A/en
Publication of JPH0430133B2 publication Critical patent/JPH0430133B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/14Manufacture of electrodes or electrode systems of non-emitting electrodes
    • H01J9/142Manufacture of electrodes or electrode systems of non-emitting electrodes of shadow-masks for colour television tubes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • ing And Chemical Polishing (AREA)

Description

【発明の詳細な説明】 〔発明の目的〕 本発明はカラーブラウン管に使用されるシヤド
ウマスクの製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] The present invention relates to a method for manufacturing a shadow mask used in a color cathode ray tube.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

カラーブラウン管は一般家庭用、モニター用、
航空機に積載するデイスプレイ用など、その用途
が多岐にわたつており、このうち一般家庭用を別
として、モニター用、デイスプレイ用のものは極
めて微細な画質が要求されているため、これらカ
ラーブラウン管に装着されるシヤドウマスクの電
子ビーム通過孔部は高精度かつ微細なものが要求
されている。
Color cathode ray tubes are used for general home use, monitors,
They are used for a wide variety of purposes, such as displays loaded on aircraft, and apart from those for general home use, monitors and displays require extremely fine image quality, so they are installed on these color cathode ray tubes. The electron beam passage hole of the shadow mask is required to be highly precise and minute.

このようなシヤドウマスクの電子ビーム通過孔
部の形状を説明すると、第1図に示すようにシヤ
ドウマスク素材1にブリツジ2を介して長手方向
に矩形状電子ビーム通過孔部3が連設されてい
る。その各矩形状電子ビーム通過孔部3は電子ビ
ーム4の入射する面が小孔31、蛍光面側の面が
大孔32である形状に形成され、かつ矩形状電子
ビーム通過孔部3の内面での電子ビーム4の反射
を防止するため、素材板厚Tに対して小孔31
深さtを微小とするほぼナイフエツジ状に形成さ
れている。また他の例として第2図に示すように
シヤドウマスク素材11に、三角形の各頂点に設
けられた円形状電子ビーム通過孔部13が同じく
電子ビーム14の入射する面が小孔131、蛍光
面側の面が大孔132である形状に形成され、こ
の円形状電子ビーム通過孔部13の内面での電子
ビーム14の反射を防止するため、素材板厚Tに
対して小側孔部131の深さtを微小とするほぼ
ナイフエツジ状に形成されている。このような電
子ビーム通過孔部はエツチングにより形成される
が、成形されたフラツトマスクはジヤドウマスク
に成形プレスする際とか、カラーブラウン管に装
着された場合に適切な機械的強度が必要である。
To explain the shape of the electron beam passage hole of such a shadow mask, as shown in FIG. 1, a rectangular electron beam passage hole 3 is continuous in the longitudinal direction of the shadow mask material 1 with a bridge 2 interposed therebetween. Each of the rectangular electron beam passing holes 3 is formed in such a shape that the surface on which the electron beam 4 enters is a small hole 3 1 and the surface facing the phosphor screen is a large hole 3 2 . In order to prevent the reflection of the electron beam 4 on the inner surface of the hole 31, the small hole 31 is formed into a substantially knife-edge shape with a depth t very small relative to the material plate thickness T. As another example, as shown in FIG. 2, a circular electron beam passage hole 13 provided at each vertex of a triangle is formed in a shadow mask material 11, and the surface on which the electron beam 14 is incident is a small hole 13 1 and a phosphor screen. The side surface is formed in a shape with a large hole 13 2 , and in order to prevent reflection of the electron beam 14 on the inner surface of the circular electron beam passage hole 13 , the small side hole 13 is formed with respect to the material plate thickness T. It is formed almost in the shape of a knife edge with a very small depth t. Such an electron beam passage hole is formed by etching, but the molded flat mask needs to have appropriate mechanical strength when it is pressed into a shadow mask or when it is attached to a color cathode ray tube.

前述の如くエツチングにより微細かつ高精度の
電子ビーム通過孔部を穿設するには、鉄などのシ
ヤドウマスク素材の板厚が薄い時は有利である
が、板厚が薄いものは機械的強度の点で劣る。こ
のため、ある程度の機械的強度が満足されるよう
に板厚を厚くしなければならない。しかし板厚の
厚いシヤドウマスク素材に微細かつ高精度の孔部
を穿設しようとすると、エツチング時間が長くな
り、そのためにエツチングによる寸法、形状のく
ずれが生じ易く、エツチングの安定性に欠ける。
As mentioned above, it is advantageous when the thickness of the shadow mask material, such as iron, is thin in order to create minute and highly accurate electron beam passage holes by etching, but thin plates have problems in terms of mechanical strength. Inferior. Therefore, the plate thickness must be increased so that a certain degree of mechanical strength is satisfied. However, when attempting to drill fine and highly accurate holes in a thick shadow mask material, the etching time becomes long, and as a result, the dimensions and shape are likely to be distorted due to etching, resulting in a lack of etching stability.

即ち、エツチングを両主面から行なうエツチン
グ方法では過度にエツチングしたり、不規則にエ
ツチングしたりする。またシヤドウマスク素材を
垂直にエツチングするに伴い、横方向のエツチン
グが進行するため、この両主面からエツチングす
る方法では微細な電子ビーム通過孔部の形成が困
難である。更にこの両主面からエツチングする方
法を連続的に帯状のシヤドウマスク素材に適用す
る場合には微細な電子ビーム通過孔部の形成が一
層困難となる。
That is, an etching method in which etching is performed from both principal surfaces may result in excessive etching or irregular etching. Further, as the shadow mask material is etched vertically, etching progresses in the lateral direction, so it is difficult to form fine electron beam passage holes by etching from both main surfaces. Furthermore, when this method of etching from both principal surfaces is continuously applied to a band-shaped shadow mask material, it becomes even more difficult to form fine electron beam passage holes.

このような両主面からエツチングする方法の諸
問題を解決する方法として、片面エツチング方法
と称し、エツチングを2段階に分け、エツチング
の前半でシヤドウマスク素材の例えば表側より一
度エツチングを行ない、洗浄乾燥したのち、ニス
やレンジなどで一時的にエツチングを行なつた面
を被覆し、エツチングの後半において裏面からエ
ツチングして電子ビーム通過孔部を形成する方法
とか、マイラーベースとかポリプロフイルムなど
を利用して部分的に遮蔽しながらエツチングする
方法などがあるが、これらはいずれも処理方法が
複雑であり、かつ手間がかかり、量産性には向か
ないという問題点がある。
As a method to solve the problems of the method of etching from both main surfaces, it is called the single-side etching method, and the etching is divided into two stages. Afterwards, you can temporarily cover the etched surface with varnish or a microwave, and in the latter half of the etching process, etch it from the back side to form the electron beam passage hole, or you can use Mylar base or polyprofil. There are methods such as etching while partially shielding, but all of these methods have the problem that they are complicated and time-consuming, and are not suitable for mass production.

この片面エツチングの改良方法として、本発明
者らは先に次のようなシヤドウマスクの製造方法
を提案した。
As a method for improving this single-sided etching, the present inventors previously proposed the following method for manufacturing a shadow mask.

まず長尺のシヤドウマスク素材の両主面に感光
膜を塗布形成し、一枚のシヤドウマスクに相当す
るよう一定間隔をおいて第1図及び第2図に示し
た所定の微細孔部に対応するパターン、即ち、エ
ツチング終了時点で両主面の開孔サイズが異なる
ように設定された小孔形成部、大孔形成部を光露
光法により形成する。次いでシヤドウマスクの一
方の面、例えば第1図の電子銃側の小側孔部31
に対応する面に接着剤により有機フイルムを圧着
する。その接着剤としてはアクリル樹脂を用い、
有機フイルムとしては0.1mmのポリエチレンフイ
ルムを用いる。
First, a photoresist film is applied and formed on both main surfaces of a long shadow mask material, and patterns corresponding to the predetermined micropores shown in FIGS. 1 and 2 are placed at regular intervals to correspond to one shadow mask. That is, a small hole forming part and a large hole forming part are formed by a light exposure method so that the opening sizes on both main surfaces are different when etching is completed. Next, one side of the shadow mask, for example, the small side hole 3 1 on the electron gun side in FIG.
Press the organic film onto the corresponding surface using adhesive. Acrylic resin is used as the adhesive,
A 0.1 mm polyethylene film is used as the organic film.

この有機スイルムの圧着は第3図に示すよう
に、適用するシヤドウマスク素材21に対応する
幅の有機フイルム15に予め接着剤を塗布してお
き、これを剥離紙16で被覆し、ロール状のドラ
ムから供給する。有機フイルム15はローラ17
により張力をかけながら同時にローラ18によつ
て剥離紙16が分離される。次いで有機フイルム
15は接着剤塗布面がシヤドウマスク素材21に
対接するようにローラ19及び20によつて加圧
されながら圧着される。この時の加圧力は約2
Kg/cm2で、有機フイルム15の粘着力は200〜400
(g/25mm幅)が好ましいとしている。
As shown in FIG. 3, this organic film is bonded by applying an adhesive to an organic film 15 having a width corresponding to the shadow mask material 21 to be applied, covering it with a release paper 16, and placing it on a rolled drum. Supplied from. The organic film 15 is attached to the roller 17
The release paper 16 is simultaneously separated by the roller 18 while applying tension. Next, the organic film 15 is pressed and pressed by rollers 19 and 20 so that the adhesive-applied surface is in contact with the shadow mask material 21. The pressing force at this time is approximately 2
Kg/ cm2 , the adhesive strength of organic film 15 is 200-400
(g/25mm width) is preferred.

しかるにこのような粘着力で有機フイルム15
をシヤドウマスク素材21に圧着すると、有機フ
イルム15とシヤドウマスク素材21との間に腐
蝕液が浸透することは阻止出来るが、後工程で有
機フイルム15を剥離しても、接着剤がシヤドウ
マスク素材21の特に孔形成部に残存し易く、こ
の接着剤が腐蝕工程における孔部の形成を妨害
し、最終的に電子ビーム通過孔部の孔ずまりとか
孔径不良などを起すという問題点があることがわ
かつた。
However, with such adhesive strength, organic film 15
By pressing the adhesive onto the shadow mask material 21, it is possible to prevent the corrosive liquid from penetrating between the organic film 15 and the shadow mask material 21. It was found that this adhesive tends to remain in the hole formation area, and this adhesive interferes with the formation of the hole during the corrosion process, ultimately causing clogging or poor hole diameter in the electron beam passage hole. .

〔発明の目的〕[Purpose of the invention]

本発明は前述した諸問題に鑑みなされたもので
あり、片面エツチング方法によりシヤドウマスク
素材に高精細な電子ビーム通過孔を穿設すること
が可能なシヤドウマスクの製造方法を提供するこ
とを目的としている。
The present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a method for manufacturing a shadow mask that can form high-definition electron beam passage holes in a shadow mask material using a single-sided etching method.

〔発明の概要〕[Summary of the invention]

即ち、本発明は長尺のシヤドウマスク素材の両
主面にそれぞれ大孔及び小孔形成部を除き感光膜
を残存させる工程と、シヤドウマスク素材のいず
れか一方の主面の幅方向両端部近傍の有効面外に
接着剤を介して、この一方の主面を覆う耐エツチ
ング液性のフイルムを圧着する工程と、前述シヤ
ドウマスク素材の他方の主面の前記大孔または小
孔形成部を介してエツチングにより第1の孔部を
形成する第1のエツチング工程と、第1の孔部内
にエツチング液の遮蔽剤を充填する工程と、フイ
ルムを剥離する工程と、シヤドウマスク素材の一
方の主面から大孔または小孔形成部を介して遮蔽
剤を露出し、所望径の電子ビーム通過孔部を形成
し得るまで第2の孔部を形成する第2のエツチン
グ工程と、遮蔽剤及び感光膜を除去する工程とを
具備することを特徴とするシヤドウマスクの製造
方法である。
That is, the present invention involves a step of leaving a photoresist film on both main surfaces of a long shadow mask material, excluding the large hole and small hole formation portions, and a step of leaving a photoresist film on both main surfaces of a long shadow mask material, and removing a photoresist film near both ends in the width direction of one of the main surfaces of the shadow mask material. A process of crimping an etching liquid-resistant film that covers this one main surface with an adhesive outside the surface, and etching through the large hole or small hole forming part of the other main surface of the shadow mask material. A first etching step of forming a first hole, a step of filling a shielding agent of an etching solution into the first hole, a step of peeling off the film, and a step of forming a large hole or a large hole from one main surface of the shadow mask material. A second etching step in which the shielding agent is exposed through the small hole forming portion and a second hole is formed until an electron beam passing hole with a desired diameter is formed; and a step in which the shielding agent and the photoresist film are removed. A method for manufacturing a shadow mask, comprising:

〔発明の実施例〕[Embodiments of the invention]

次に本発明の一実施例を第4図乃至第9図によ
り説明する。
Next, one embodiment of the present invention will be described with reference to FIGS. 4 to 9.

先ずエツチングに先立つて長尺のシヤドウマス
ク素材としての鉄を主成分とする金属板やアンバ
ー板の両主面を清浄にしたのち、このシヤドウマ
スク素材に牛乳カゼインを主成分とした感光液、
即ち増光剤として重クロム酸アンモニウムを牛乳
カゼインに対して重量%で約1%添加し、比重
1.028に調整した感光液をデイツプ法による垂直
引上げ方法で塗布し、約100℃の雰囲気中で約10
分間乾燥して両主面に感光膜を形成する。
First, before etching, both main surfaces of the long shadow mask material, such as a metal plate mainly composed of iron or an amber plate, are cleaned, and then a photosensitive liquid mainly composed of milk casein,
That is, about 1% by weight of ammonium dichromate is added as a brightening agent to milk casein, and the specific gravity is
A photosensitive solution adjusted to 1.028 was applied by vertical pulling method using the dip method.
Dry for a minute to form a photoresist film on both main surfaces.

次に露光工程において、この両主面の感光膜上
に小孔用ネガパターン、大孔用ネガパターンから
なるネガ原板を密接して水銀ランプで露光を行な
う。次に約40℃の温純水にて現像したのち150℃
の雰囲気で乾燥し、次に200℃の雰囲気でバーニ
ングすることにより第4図に示すように両主面に
それぞれ孔径d1の小孔形成部34及び孔径d2の大
孔形成部35を除いて感光膜32,33が残存し
てなるシヤドウマスク部材31を形成する。
Next, in an exposure step, a negative original plate consisting of a negative pattern for small holes and a negative pattern for large holes is placed on the photoresist film on both main surfaces in close contact with each other and exposed to light using a mercury lamp. Next, develop with warm pure water at about 40℃ and then at 150℃.
By drying in an atmosphere of A shadow mask member 31 in which the photoresist films 32 and 33 remain is formed.

次に第8図及び第9図に示すように、例えば小
孔形成部34が形成されたシヤドウマスク部材3
1の幅方向の両端部にアクリル樹脂などからなる
接着剤36を使用してシヤドウマスク部材31の
小孔形成部34の形成された一方の主面を覆うよ
うに例えばポリエチレンなどからなる耐エツチン
グ液性を有するフイルム37を圧着する。
Next, as shown in FIGS. 8 and 9, a shadow mask member 3 in which, for example, a small hole forming part 34 is formed.
An adhesive 36 made of acrylic resin or the like is used at both ends of the shadow mask member 31 in the width direction to cover one main surface of the shadow mask member 31 on which the small hole forming part 34 is formed. A film 37 having the following properties is crimped.

この圧着方法は第3図と同様なので特に図示し
ないが、シヤドウマスク素材に対応する幅のフイ
ルムに予め接着剤36が塗布され剥離紙で被覆さ
れてロール状に巻かれたドラムから供給され、フ
イルム37はローラにより張力をかけながら同時
に他のローラにより剥離紙を分離し、次いでフイ
ルム37を接着剤36の塗布面がシヤドウマスク
部材31の一方の主面に対接するようにローラに
よつて加圧しながら圧着する。この時の圧力は約
2Kg/cm2でフイルム37の粘着力は200〜400
(g/25cm幅)であることが好ましい。この場合、
注意することは接着剤36が鎖線38で示すフラ
ツトマスクとなる有効面内に入らないようにする
ことである。
This pressure bonding method is the same as that shown in FIG. 3, so it is not particularly shown, but the film 37 is supplied from a drum in which an adhesive 36 is applied in advance to a film having a width corresponding to the shadow mask material, the film is covered with a release paper, and is wound into a roll. At the same time, while applying tension with a roller, the release paper is separated using another roller, and then the film 37 is pressed and bonded with pressure using a roller so that the surface coated with the adhesive 36 is in contact with one main surface of the shadow mask member 31. do. The pressure at this time is approximately 2Kg/cm 2 and the adhesive strength of the film 37 is 200 to 400.
(g/25cm width) is preferable. in this case,
Care must be taken to ensure that the adhesive 36 does not enter the effective surface area that will form the flat mask indicated by the dashed line 38.

次に第5図に示すように大孔形成部35側から
スプレイエツチングにより所定の第1の孔部とし
て大孔39を所定深さに形成する。
Next, as shown in FIG. 5, a large hole 39 is formed to a predetermined depth as a predetermined first hole portion by spray etching from the large hole forming portion 35 side.

次いで水洗し、ホツトエアにより乾燥した後、
第6図に示すように少なくとも大孔39部内にパ
ラフインなどのエツチング液の遮蔽剤40を充填
する。
After washing with water and drying with hot air,
As shown in FIG. 6, at least the large hole 39 is filled with a shielding agent 40 of an etching solution such as paraffin.

次にフイルム37を剥離し、小孔形成部34側
からスプレイエツチングにより遮蔽剤40を露出
して所望径の電子ビーム通過孔部を形成し得るま
で第2の孔部としての小孔41を形成する。
Next, the film 37 is peeled off, and the shielding agent 40 is exposed by spray etching from the small hole forming part 34 side, and small holes 41 as second holes are formed until an electron beam passing hole with a desired diameter is formed. do.

次に第7図に示すように遮蔽剤40を除去し、
径D1の開口部を有する小孔41と径D2の開口部
を有する大孔39からなる電子ビーム通過孔部4
2を得る。
Next, as shown in FIG. 7, the shielding agent 40 is removed,
Electron beam passage hole 4 consisting of a small hole 41 having an opening with a diameter D 1 and a large hole 39 having an opening with a diameter D 2
Get 2.

次に感光膜32,33を除去することによりフ
ラツトマスクを完成する。
Next, the photoresist films 32 and 33 are removed to complete the flat mask.

前記実施例ではフイルムを小孔形成部のあるシ
ヤドウマスク部材側に設けたが、これは大孔形成
部のあるシヤドウマスク部材側に設けてもよい。
また小孔及び大孔形成部は円形の他に矩形にして
もよいことは説明するまでもない。
In the embodiment described above, the film was provided on the side of the shadow mask member where the small hole forming portion is located, but it may be provided on the side of the shadow mask member where the large hole forming portion is located.
It goes without saying that the small hole and large hole forming portions may be rectangular instead of circular.

〔発明の効果〕〔Effect of the invention〕

上述のように本発明によれば、片面エツチング
方法で一方の主面のエツチング防止をフイルムに
より行ない、かつこのフイルムの接着剤を使用し
たシヤドウマスク部材への圧着をフラツトマスク
となる有効部外で行なうので、フイルムの剥離時
にフラツトマスク形成部内、特に小孔や大孔形成
部にフイルムが残存することがなく、極めて品位
の良好なシヤドウマスクを得ることが可能であ
り、この工業的価値は極めて大である。
As described above, according to the present invention, etching of one main surface is prevented by a film in the single-sided etching method, and the film is crimped to the shadow mask member using an adhesive outside the effective area that will become the flat mask. When the film is peeled off, the film does not remain in the flat mask formation area, especially in the small hole and large hole formation areas, and it is possible to obtain a shadow mask of extremely high quality, which is of great industrial value.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はシヤドウマスク素材に矩形状孔部を穿
設した状態を示す図であり、a図は平面図、b図
はaのA−A′に沿う断面図、第2図はシヤドウ
マスク素材に円形状孔部を穿設した状態を示す図
であり、a図は平面図、b図はa図のB−B′線
に沿う断面図、第3図は先願の一工程に使用する
フイルム圧着装置を示す概略図、第4図乃至第9
図は本発明のシヤドウマスクの製造方法を示す図
であり、第4図はシヤドウマスク素材の両主面に
小孔及び大孔形成部を除いて感光膜を残存させた
状態を示す断面図、第5図はシヤドウマスク部材
の小孔形成部側にフイルムを設け、大孔形成部側
から第1の孔部を穿設した状態を示す断面図、第
6図は第1の孔部にエツチング液の遮蔽剤を充填
し、フイルムを除去し、小孔形成部側から第2の
孔部を穿設した状態を示す断面図、第7図は遮蔽
剤を除去した状態を示す断面図、第8図はフイル
ムを接着剤を介してシヤドウマスク部材の小孔形
成部側に圧着した状態を示す斜視図、第9図は第
8図のA部拡大図である。 1,11,31……シヤドウマスク素材、3,
13,42……電子ビーム通過孔部、15,37
……フイルム、32,33……感光膜、34……
小孔形成部、35……大孔形成部、36……接着
剤、39……第1の孔部、40……遮蔽剤、41
……第2の孔部。
Fig. 1 is a diagram showing a state in which a rectangular hole is bored in the shadow mask material. Fig. 3 is a diagram showing a state in which a shaped hole is drilled, Fig. a is a plan view, Fig. b is a sectional view taken along line B-B' in Fig. a, and Fig. 3 is a film crimping used in one step of the earlier application. Schematic diagrams showing the device, Figures 4 to 9
4 is a cross-sectional view showing a state in which the photoresist film remains on both main surfaces of the shadow mask material except for the small hole and large hole forming portions; FIG. The figure is a cross-sectional view showing a state in which a film is provided on the side where the small hole is formed in the shadow mask member, and the first hole is drilled from the side where the large hole is formed. A cross-sectional view showing a state in which the shielding agent is filled, the film is removed, and a second hole is drilled from the small hole forming part side, FIG. 7 is a cross-sectional view showing a state in which the shielding agent is removed, and FIG. FIG. 9 is an enlarged view of section A in FIG. 8, which is a perspective view showing a state in which the film is pressed onto the small hole forming portion side of the shadow mask member through an adhesive. 1, 11, 31...Shadow mask material, 3,
13, 42...electron beam passage hole, 15, 37
...Film, 32, 33...Photosensitive film, 34...
Small hole forming part, 35... Large hole forming part, 36... Adhesive, 39... First hole part, 40... Shielding agent, 41
...Second hole.

Claims (1)

【特許請求の範囲】[Claims] 1 長尺のシヤドウマスク素材の両主面にそれぞ
れ大孔及び小孔形成部を除き感光膜を残存させる
工程と、前記シヤドウマスク素材のいずれか一方
の主面の幅方向両端部近傍の有効面外に接着剤を
介して、この一方の主面を覆う耐エツチング液性
のフイルムを圧着する工程と、前記シヤドウマス
ク素材の他方の主面の前記大孔または小孔形成部
を介してエツチングにより第1の孔部を形成する
第1のエツチング工程と、前記第1の孔部内にエ
ツチング液の遮蔽剤を充填する工程と、前記フイ
ルムを剥離する工程と、前記シヤドウマスク素材
の一方の主面から前記大孔または小孔形成部を介
して前記遮蔽剤を露出し、所望径の電子ビーム通
過孔部を形成し得るまで第2の孔部を形成する第
2のエツチング工程と、前記遮蔽剤及び前記感光
膜を除去する工程とを具備することを特徴とする
シヤドウマスクの製造方法。
1. A step of leaving a photoresist film on both main surfaces of a long shadow mask material, excluding the large hole and small hole forming portions, respectively, and a step of leaving a photoresist film on both main surfaces of a long shadow mask material, and leaving a photoresist film outside the effective surface near both ends in the width direction of one of the main surfaces of the shadow mask material. A step of press-bonding an etching liquid-resistant film covering one main surface of the shadow mask material with an adhesive, and etching the first film through the large hole or small hole forming portion of the other main surface of the shadow mask material. a first etching step of forming a hole, a step of filling the first hole with a shielding agent of an etching solution, a step of peeling off the film, and a step of etching the large hole from one main surface of the shadow mask material. or a second etching step in which the shielding agent is exposed through the small hole forming part and a second hole is formed until an electron beam passing hole having a desired diameter is formed; and the shielding agent and the photoresist film are removed. A method for producing a shadow mask, comprising the step of removing.
JP18216882A 1982-10-19 1982-10-19 Production method of shadow mask Granted JPS5973833A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18216882A JPS5973833A (en) 1982-10-19 1982-10-19 Production method of shadow mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18216882A JPS5973833A (en) 1982-10-19 1982-10-19 Production method of shadow mask

Publications (2)

Publication Number Publication Date
JPS5973833A JPS5973833A (en) 1984-04-26
JPH0430133B2 true JPH0430133B2 (en) 1992-05-20

Family

ID=16113531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18216882A Granted JPS5973833A (en) 1982-10-19 1982-10-19 Production method of shadow mask

Country Status (1)

Country Link
JP (1) JPS5973833A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070185A (en) * 1983-09-26 1985-04-20 Toshiba Corp Production of shadow mask
JP5769042B2 (en) * 2010-09-30 2015-08-26 大日本印刷株式会社 Method for forming pedestal etching on metal substrate

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423556B2 (en) * 1972-11-30 1979-08-14
US4124437A (en) * 1976-04-05 1978-11-07 Buckbee-Mears Company System for etching patterns of small openings on a continuous strip of metal
JPS5536068A (en) * 1978-09-08 1980-03-13 Sugita Sangyo Kk Reinforcing bar welding jig
JPS5726346A (en) * 1980-07-22 1982-02-12 Kubota Ltd Hot water feeder

Also Published As

Publication number Publication date
JPS5973833A (en) 1984-04-26

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