JPH0434304B2 - - Google Patents
Info
- Publication number
- JPH0434304B2 JPH0434304B2 JP60265659A JP26565985A JPH0434304B2 JP H0434304 B2 JPH0434304 B2 JP H0434304B2 JP 60265659 A JP60265659 A JP 60265659A JP 26565985 A JP26565985 A JP 26565985A JP H0434304 B2 JPH0434304 B2 JP H0434304B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- cavity
- sealing
- gate
- speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Injection Moulding Of Plastics Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、樹脂封止型半導体装置の製造方法に
関し、特にマルチプランジヤー封入機による樹脂
封止方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a resin-encapsulated semiconductor device, and particularly to a resin-encapsulating method using a multi-plunger encapsulating machine.
半導体素子の樹脂封止は、キヤビイテイーにゲ
ートを通してポツトから樹脂を充填し、キヤビイ
テイー内でその樹脂により半導体素子の封止を行
われるが、従来、その成形注入速度は一定であつ
た。
To seal a semiconductor element with resin, resin is filled from a pot through a gate in a cavity, and the semiconductor element is sealed with the resin within the cavity. Conventionally, the molding injection speed has been constant.
ところで、第２図に示すようにキヤビイテイー
内に樹脂を充填するとき、樹脂がゲートからキヤ
ビイテイーに注入される前後で注入速度が速い
と、成形品のゲート下にボイド５が発生しやす
い。またキヤビイテイーに樹脂が注入された後に
注入速度が遅いと成形品のエアーベント側表面６
にボイド或いはフクレが発生しやすく、また内部
ボイドも発生しやすくなる。４はゲート跡であ
る。
By the way, when filling the cavity with resin as shown in FIG. 2, if the injection speed is fast before and after the resin is injected into the cavity from the gate, voids 5 are likely to occur under the gate of the molded product. Also, if the injection speed is slow after resin is injected into the cavity, the air vent side surface 6 of the molded product
voids or blisters are likely to occur, and internal voids are also likely to occur. 4 is the remains of the gate.
従来の樹脂封止方法では樹脂注入速度が一定で
あるため、ゲート下ボイドやエアーベント側表面
のボイドやフクレ、内部ボイドなどを同時に除去
することはできなかつた。 In conventional resin sealing methods, the resin injection rate is constant, so it is not possible to simultaneously remove voids under the gate, voids and blisters on the air vent side surface, and internal voids.
本発明はボイドやフクレ除去する樹脂注入方法
を提供するものである。 The present invention provides a resin injection method for removing voids and blisters.
本発明はキヤビイテイーにゲートを通してポツ
トから樹脂を充填し、その樹脂にてリードフレー
ムの半導体素子を樹脂封止するマルチプランジヤ
ー樹脂封止用半体装置の樹脂封止方法において、
ゲートからキヤビイテイーに至るまでの樹脂注入
速度を低速で行い、その後高速に切換えて樹脂封
止することを特徴とする樹脂封止型半導体装置の
樹脂封止方法である。
The present invention provides a resin sealing method for a multi-plunger resin sealing half device in which a cavity is filled with resin from a pot through a gate, and a semiconductor element of a lead frame is sealed with the resin.
This is a method for resin-sealing a resin-sealed semiconductor device, which is characterized in that the resin injection speed from the gate to the cavity is performed at a low speed, and then the speed is changed to a high speed for resin-sealing.
以下本発明の一実施例を図面を参照して説明す
る。
An embodiment of the present invention will be described below with reference to the drawings.
第１図はプランジヤーの変位量とと注入時間と
の関係を示す図である。 FIG. 1 is a diagram showing the relationship between the amount of displacement of the plunger and the injection time.
半導体素子を樹脂封止するには、半導体素子を
搭載したリードフレームをキヤビイテイーにセツ
トして型締めを行い、次いでキヤビイテイーにゲ
ートを通してポツトから樹脂を充填し、キヤビイ
テイー内でその樹脂により半導体素子の樹脂封止
が行われる。 To encapsulate a semiconductor element with resin, a lead frame with a semiconductor element mounted thereon is set in a cavity, the mold is clamped, and then a gate is passed through the cavity and resin is filled from a pot. Sealing takes place.
本発明は樹脂がゲートからキヤビイテイーに入
る直後まで１のように低速で注入し、その後２の
ように高速に切換えて樹脂封止を行うものであ
る。３は樹脂がゲートからキヤビイテイーに注入
された直後に速度が切り換わる位置を示す。 In the present invention, the resin is injected at a low speed as shown in 1 until immediately after it enters the cavity from the gate, and then switched to a high speed as shown in 2 to perform resin sealing. 3 indicates the position where the speed changes immediately after resin is injected into the cavity from the gate.
上記本発明の樹脂封止方法によりエポキシ樹脂
系成形材料でマルチプランジヤー成形によりトラ
ンスフアー成形した場合の一実施例として、成形
温度180℃、予熱なしの樹脂タブレツトを用い、
プランジヤー変位速度を樹脂がキヤビイテイーに
入る直前まで0.5mm/secとし、その後4.5mm/sに切
換え成形したところ、表面のボイドやフクレ、内
部ボイドなどのない樹脂封止型半導体装置が得ら
れた。 As an example of transfer molding by multi-plunger molding with an epoxy resin molding material using the resin sealing method of the present invention, a resin tablet was molded at a molding temperature of 180°C without preheating.
When the plunger displacement speed was set to 0.5 mm/sec until just before the resin entered the cavity, and then changed to 4.5 mm/s during molding, a resin-sealed semiconductor device with no surface voids, blisters, or internal voids was obtained.
以上説明したように本発明は、成形注入速度を
低速から高速に切換えることにより、樹脂封止を
行うので、成形品表面のボイドやフクレ、内部ボ
イドなどのない樹脂封止型半導体装置を得ること
ができる効果を有するものである。
As explained above, the present invention performs resin sealing by switching the molding injection speed from low to high speed, so that it is possible to obtain a resin-sealed semiconductor device without voids, blisters, internal voids, etc. on the surface of the molded product. This has the effect of making it possible.
第１図は本発明の樹脂封止方法を説明するため
のプランジヤーの変位量と注入時間との関係を示
す図、第２図は従来の樹脂封止方法により封入し
て成形品の外形図である。
１…注入速度の低速部分、２…注入速度の高速
部分。
Figure 1 is a diagram showing the relationship between plunger displacement and injection time to explain the resin sealing method of the present invention, and Figure 2 is an outline drawing of a molded product sealed by the conventional resin sealing method. be. 1...Low speed portion of injection speed, 2...High speed portion of injection speed.
Claims (1)
樹脂を充填し、その樹脂にてリードフレームの半
導体素子を樹脂封止するマルチプランジヤー樹脂
封止用半導体装置の樹脂封止方法において、ゲー
トからキヤビテイに至るまでの樹脂注入速度を低
速で行い、その後高速に切換えて樹脂封止するこ
とを特徴とする樹脂封止型半導体装置の樹脂封止
方法。1 In a resin sealing method for a semiconductor device for multi-plunger resin sealing, in which resin is filled from a pot through a gate into the cavity and the semiconductor element of a lead frame is sealed with the resin, the resin is filled from the gate to the cavity. A method for resin-sealing a resin-sealed semiconductor device, characterized in that injection speed is performed at a low speed, and then the injection speed is changed to a high speed for resin-sealing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26565985A JPS62125635A (en) | 1985-11-26 | 1985-11-26 | Resin-sealed method for resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26565985A JPS62125635A (en) | 1985-11-26 | 1985-11-26 | Resin-sealed method for resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62125635A JPS62125635A (en) | 1987-06-06 |
| JPH0434304B2 true JPH0434304B2 (en) | 1992-06-05 |
Family
ID=17420208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26565985A Granted JPS62125635A (en) | 1985-11-26 | 1985-11-26 | Resin-sealed method for resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62125635A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2516301Y2 (en) * | 1991-11-22 | 1996-11-06 | 株式会社椿本チエイン | Air shock absorber for compound trolley conveyor |
| JPH0544741U (en) * | 1991-11-22 | 1993-06-15 | 株式会社椿本チエイン | Friction type shock absorber for double trolley conveyor |
| JP3930229B2 (en) | 2000-06-22 | 2007-06-13 | 株式会社東海理化電機製作所 | Mirror device for vehicle |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58222831A (en) * | 1982-06-22 | 1983-12-24 | Fujitsu Ltd | Transfer molding apparatus |
| JPS60108154A (en) * | 1984-04-10 | 1985-06-13 | Ube Ind Ltd | Method for controlling injection speed |
-
1985
- 1985-11-26 JP JP26565985A patent/JPS62125635A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62125635A (en) | 1987-06-06 |
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