JPH0435435B2 - - Google Patents
Info
- Publication number
- JPH0435435B2 JPH0435435B2 JP62315756A JP31575687A JPH0435435B2 JP H0435435 B2 JPH0435435 B2 JP H0435435B2 JP 62315756 A JP62315756 A JP 62315756A JP 31575687 A JP31575687 A JP 31575687A JP H0435435 B2 JPH0435435 B2 JP H0435435B2
- Authority
- JP
- Japan
- Prior art keywords
- firing
- silicon carbide
- vacuum
- density
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010304 firing Methods 0.000 claims description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- 239000012298 atmosphere Substances 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000000280 densification Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- -1 sintering aids Chemical compound 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Description
(産業上の利用分野)
本発明は、高密度炭化ケイ素焼結体の製造法に
関する。
(従来技術)
高密度炭化ケイ素焼結体は耐熱性、耐薬品性、
耐摩耗性等に優れていることから、高温下での構
造材料として注目されその製造法の確立が望まれ
ており、その一製造法が特公昭61−308号公報に
示されている。
同公報に示された製造法は炭化ケイ素を主体と
する加圧成形体の焼成条件に着目してなされたも
ので、上記加圧成形体を常温から1600〜1800℃ま
での温度では5トール以下の真空下で焼成し、次
いで1600〜1800℃から2000〜2500℃までの温度で
は流動しない不活性ガス雰囲気中で焼成すること
を特徴とするものである。
しかして、かかる製造法によれば、全て真空下
で焼成する場合に比して焼結体表面での炭素被膜
の生成が極めて少なく、かつ上記焼成条件下にお
けると同様の高密度の焼結体が得られるものとし
ている。
(発明が解決しようとする問題点)
ところで、本発明者は上記した加圧成形体の焼
成条件についてさらに詳細に検討したことろ、焼
成中発生した阻害物質であるCOを速やかに除去
する必要があることは勿論であるが、特に炭化ケ
イ素の緻密化は1800〜2000℃で開始されかかる温
度域での阻害化物質の除去が炭化ケイ素の緻密化
にとつて極めて有効であるとの知見を得た。
従つて、本発明の目的は、かかる知見に基づき
高密度炭化ケイ素焼結体を得ようとするものであ
る。
(問題点を解決するための手段)
本発明は高密度炭化ケイ素焼結体の製造法に関
し、炭化ケイ素またはこれを主体とする加圧成形
体を常温から1800℃までの温度では1トール以下
の真空下で焼成し、次いで1800℃から2000℃まで
の温度では0.05トール以下の真空下で焼成し、最
後に2000℃から2100〜2400℃まの温度では不活性
ガス雰囲気下で焼成することを特徴とするもので
ある。
本発明における加圧成形体は、炭化ケイ素また
はこれを主体とするもので、その原料、焼結助剤
等の添加物、成形手段等は公知の適宜の物、方法
が使用され、これらに関しては何等制限されるも
のではない。
上記加圧成形体の焼成においては、各焼成工程
での昇温速度は適宜の速度でよく例えば5〜10
℃/minの昇温速度が好適に採用される。また、
最後の2000℃から2100〜2400℃までの温度での焼
成はアルゴン、ヘリウム等不活性ガス雰囲気下で
行うが、不活性ガスを流動、非流動のいずれの状
態でもよく、好ましくは流入かつ流出しつつ行
う。
(発明の作用・効果)
本発明の製造法によれば、常温から2000℃まで
の温度では真空下で焼成しかつ2000℃から2100〜
2400℃までの温度では不活性ガス雰囲気下で焼成
しているため、焼結体表面での炭素被膜の成形が
極めて少ない高密度焼結体が得られるが、炭化ケ
イ素の緻密化が開始される1800〜2000℃の焼成は
0.05トール以下という高真空下にて行うことか
ら、かかる焼成雰囲気には炭化ケイ素の緻密化を
阻害する物質は全くまたはほとんど存在せず、一
層高密度の炭化ケイ素焼結体が得られる。
(実施例)
平均粒径0.4μmのβ−Sic粉体100重量部、平均
粒径2.0μmのB4C粉体0.7重量部、カーボンブラ
ツク1.0重量部を水とともに混合し、かつポリビ
ニアルコールを用いて造粒し、こえを2.0トンの
圧力で加工して外径50mm、厚さ7mmの加圧成形体
を多数成形した。その後、加圧成形体を窒素雰囲
気下600℃で10時間焼成して、バインダーである
ポリビニルアルコールを加圧成形体から除去し
た。
得られた各加圧成形体を気孔率18%で内外に通
じる貫通孔の開孔度(%)が各値のーボン製サヤ
に収容し、焼成炉内で各条件で焼成した。得られ
た各焼結体の相対密度(%)を別表に示す。な
お、焼成炉の昇温速度は常温から1800℃までの温
度では10℃/min、1800℃以上の温度では5℃/
minであり、また2000℃からアルゴンを6/
minで流通し焼成の最高温度で30min維持した。
また、比較例5,6においてはアルゴンの流通開
始温度は1800℃、比較例7においては1900℃、比
較例8においては1700℃であつた。なお、別表に
おいてサヤ開孔度、相対密度とは下記事項を意味
する。
サヤ開孔度*1:サヤの内外に通じる貫通孔のサ
ヤ全表面積に対する割合
相対密度:*2:理論密度3.21g/cm3に対する割
合
(Industrial Application Field) The present invention relates to a method for producing a high-density silicon carbide sintered body. (Conventional technology) High-density silicon carbide sintered bodies have heat resistance, chemical resistance,
Because of its excellent wear resistance, it has attracted attention as a structural material under high temperatures, and it has been desired to establish a manufacturing method for it.One manufacturing method is disclosed in Japanese Patent Publication No. 308/1983. The manufacturing method disclosed in the publication was developed by focusing on the firing conditions of a press-molded body mainly made of silicon carbide, and the press-molded body was heated to a temperature of 5 torr or less from room temperature to 1,600 to 1,800 degrees Celsius. It is characterized by firing under a vacuum of 1,600 to 1,800°C to 2,000 to 2,500°C in an inert gas atmosphere that does not flow. According to this manufacturing method, the formation of a carbon film on the surface of the sintered body is extremely small compared to the case where everything is fired under vacuum, and the sintered body has the same high density as under the above firing conditions. is assumed to be obtained. (Problems to be Solved by the Invention) By the way, the present inventor has studied in more detail the firing conditions for the above-mentioned press-formed body, and has found that it is necessary to promptly remove CO, which is an inhibitory substance generated during firing. Of course, the densification of silicon carbide begins at 1800 to 2000°C, and we have found that removing inhibiting substances in this temperature range is extremely effective for densification of silicon carbide. Ta. Therefore, an object of the present invention is to obtain a high-density silicon carbide sintered body based on this knowledge. (Means for Solving the Problems) The present invention relates to a method for producing a high-density silicon carbide sintered body. Characterized by firing under vacuum, then firing under vacuum of less than 0.05 Torr at temperatures from 1800℃ to 2000℃, and finally firing under an inert gas atmosphere at temperatures from 2000℃ to 2100-2400℃ That is. The press-molded article in the present invention is made of silicon carbide or is made mainly of silicon carbide, and its raw materials, additives such as sintering aids, molding means, etc. may be any known appropriate materials or methods. There are no restrictions whatsoever. In the firing of the above-mentioned press-molded body, the temperature increase rate in each firing step may be set at an appropriate rate, for example, 5 to 10
A heating rate of °C/min is preferably employed. Also,
The final firing at a temperature from 2,000°C to 2,100 to 2,400°C is performed under an inert gas atmosphere such as argon or helium, but the inert gas may be in either a flowing or non-flowing state, preferably flowing in and out. I will do it. (Operations and Effects of the Invention) According to the manufacturing method of the present invention, baking is possible under vacuum at temperatures from room temperature to 2000°C, and from 2000°C to 2100°C.
Since the firing is performed under an inert gas atmosphere at temperatures up to 2400°C, a high-density sintered body is obtained with very little formation of carbon film on the surface of the sintered body, but the densification of silicon carbide begins. Firing at 1800-2000℃
Since the firing is carried out under a high vacuum of 0.05 torr or less, there are no or almost no substances that inhibit the densification of silicon carbide in the firing atmosphere, and a silicon carbide sintered body with a higher density can be obtained. (Example) 100 parts by weight of β-Sic powder with an average particle size of 0.4 μm, 0.7 parts by weight of B 4 C powder with an average particle size of 2.0 μm, and 1.0 parts by weight of carbon black were mixed with water, and polyvinyl alcohol was added. A large number of press-molded products with an outer diameter of 50 mm and a thickness of 7 mm were formed by processing the powder under a pressure of 2.0 tons. Thereafter, the press-molded body was baked at 600° C. for 10 hours in a nitrogen atmosphere to remove polyvinyl alcohol as a binder from the press-molded body. Each of the obtained press-molded bodies was housed in a carbon pod having a porosity of 18% and a through-hole opening degree (%) of each value, and fired under various conditions in a firing furnace. The relative density (%) of each obtained sintered body is shown in the attached table. The heating rate of the firing furnace is 10°C/min from room temperature to 1800°C, and 5°C/min at temperatures above 1800°C.
min, and from 2000℃ argon is
The temperature was maintained at the maximum firing temperature for 30 min.
In Comparative Examples 5 and 6, the argon flow start temperature was 1800°C, in Comparative Example 7 it was 1900°C, and in Comparative Example 8 it was 1700°C. In addition, in the attached table, pod porosity and relative density mean the following items. Saya porosity *1: Percentage of through holes communicating inside and outside of the pod relative to the total surface area of the pod Relative density: *2: Ratio to the theoretical density of 3.21 g/cm 3
【表】【table】
【表】
上記表を参照すると、本発明の製造法(実施例
1〜6)によれば高密度の焼結体が得られること
が明らかであり、本発明の製造法を外れる場合
(比較例1,2,5〜8)には焼結体の密度が低
くなる。特にこれらの比較例1,2,5を参照す
ると、1800〜2000℃の温度での焼結時の真空度が
焼結体の緻密化に大きく影響を及ぼしていること
がわかる。なお、比較例3,4は見掛け上本発明
の製造法に該当するが、サヤの開孔度が皆無また
小さくサヤ内の雰囲気を速やかに所定の真空度に
することが困難なため、実際には成形体の焼成条
件(特に真空度)が本発明の条件から外れている
ことによるものと理解される。[Table] Referring to the above table, it is clear that a high-density sintered body can be obtained according to the production method of the present invention (Examples 1 to 6), and when the production method of the present invention is not used (Comparative Example 1, 2, 5 to 8), the density of the sintered body becomes low. In particular, referring to Comparative Examples 1, 2, and 5, it can be seen that the degree of vacuum during sintering at a temperature of 1,800 to 2,000°C has a large effect on the densification of the sintered body. Although Comparative Examples 3 and 4 apparently correspond to the manufacturing method of the present invention, the degree of pores in the pod is completely absent or small, making it difficult to quickly bring the atmosphere inside the pod to a predetermined degree of vacuum. It is understood that this is due to the fact that the firing conditions (particularly the degree of vacuum) of the molded body deviate from the conditions of the present invention.
Claims (1)
を常温から1800℃までの温度では1トール以下の
真空下で焼成し、次いで1800℃から2000℃までの
温度では0.05トール以下の真空下で焼成し、最後
に2000℃から2100〜2400℃までの温度では不活性
ガス雰囲気下で焼成することを特徴とする高密度
炭化ケイ素焼結体の製造法。1Silicon carbide or a press-molded product mainly composed of silicon carbide is fired under a vacuum of 1 torr or less at temperatures from room temperature to 1800°C, and then fired under a vacuum of 0.05 torr or less at temperatures from 1800°C to 2000°C. and finally firing in an inert gas atmosphere at a temperature from 2000°C to 2100-2400°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62315756A JPH01157465A (en) | 1987-12-14 | 1987-12-14 | Production of high density silicon carbide sintered body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62315756A JPH01157465A (en) | 1987-12-14 | 1987-12-14 | Production of high density silicon carbide sintered body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01157465A JPH01157465A (en) | 1989-06-20 |
| JPH0435435B2 true JPH0435435B2 (en) | 1992-06-11 |
Family
ID=18069168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62315756A Granted JPH01157465A (en) | 1987-12-14 | 1987-12-14 | Production of high density silicon carbide sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01157465A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2666955B2 (en) * | 1988-04-01 | 1997-10-22 | 株式会社東芝 | Method for producing SiC component and container for sintering SiC component |
| WO2008114847A1 (en) | 2007-03-16 | 2008-09-25 | Nippon Shokubai Co., Ltd. | Water absorbent resin production method and usage thereof |
-
1987
- 1987-12-14 JP JP62315756A patent/JPH01157465A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01157465A (en) | 1989-06-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080611 Year of fee payment: 16 |