JPH0436106B2 - - Google Patents
Info
- Publication number
- JPH0436106B2 JPH0436106B2 JP11299487A JP11299487A JPH0436106B2 JP H0436106 B2 JPH0436106 B2 JP H0436106B2 JP 11299487 A JP11299487 A JP 11299487A JP 11299487 A JP11299487 A JP 11299487A JP H0436106 B2 JPH0436106 B2 JP H0436106B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- thin film
- copper alloy
- substrate
- total amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 10
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 239000005368 silicate glass Substances 0.000 description 4
- 229920001342 Bakelite® Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004637 bakelite Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Surface Treatment Of Glass (AREA)
- Glass Compositions (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Inorganic Insulating Materials (AREA)
Description
〔発明の目的〕
（産業上の利用分野）
本発明は、Cu2O含有量の高いケイ酸塩ガラス
からなる基板を還元処理して、その表面に銅合金
薄膜を形成した電気回路用基板に関する。
（従来の技術）
従来、半導体素子および集積回路等に使用され
る電気回路用基板は、ベークライト、エポキシ樹
脂等からなる樹脂基板の表面にメツキ法等により
金属薄膜を被着したもの、またはアルミナ等の無
機物質からなる基板に金属含有インキで印刷し還
元雰囲気で焼成したものなどが主体であるが、ガ
ラスの平滑さや成形、加工が容易なことからガラ
ス板を基板として用いる場合もある。樹脂基板は
有機物質のために、耐熱性が100℃前後、熱伝導
率が約10-3W／cm・degといずれも低い。アルミ
ナ基板は研削、穿孔等の加工が容易でなく、粉体
を成形後高温度で焼成しなければならない。ま
た、PbO含有量の高いケイ酸塩ガラスを水素雰囲
気中で加熱し還元処理して、その表面に導電性薄
膜を形成したものが電子増倍管に利用されてい
る。この還元処理ガラスの導電性薄膜は、安定し
て均一な導電層が得られることが知られている。
（発明が解決しようとする問題点）
上記のように従来の電気回路用基板において、
樹脂基板は耐熱性および熱伝導率が低いという欠
点があり、アルミナ基板は加工性および成形性に
問題がある。
本発明は上記事情を考慮してなされたもので、
樹脂基板よりも耐熱性および熱伝導率が高く、ア
ルミナ基板に比べ加工性および成形性にすぐれた
電気回路用基板を提供することを目的とする。
〔発明の構成〕
（問題点を解決するための手段および作用）
本発明は、Cu2O含有量の高いケイ酸塩ガラス
基板を還元処理し、その表面に導電性の銅合金薄
膜を形成したものである。すなわち、重量百分率
でSiO255〜75％、Al2O35〜15％、Cu2O10〜30
％、B2O3、MgO、CaO、SrO、BaO、ZnOがそ
れぞれ０〜10％、かつ２種以上の合量で１〜10
％、As2O3がSb2O3合量で0.3〜1.5％を含有してな
るガラス基板を還元処理して、その表面に銅合金
薄膜を形成した電気回路用基板である。この銅合
金薄膜は還元処理によつてガラス表面層の酸化銅
が還元され、銅単原子として分散しているものと
解釈される。
上記ガラスの各成分を前記範囲に限定した理由
について説明する。
SiO2は55％未満では化学的耐久性および耐熱
性が低下し、75％を超えると溶融が困難となりガ
ラスの均質性が得られない。Al2O3は５％未満で
は溶融後の冷却中に早く分相現象をおこして均質
なガラスが得られず、15％を超えると溶融困難と
なる。Cu2Oは10％未満では基板の表面を還元し
ても良好な銅合金薄膜が得られず、30％を超える
とガラスの電気抵抗が低下する。
B2O3、MgO、CaO、SrO、BaO、ZnOは多成
分系にすることにより、溶融性を向上させ均質な
ガラスを得るために合量で１〜10％含有させる。
As2O3、Sb2O3は清澄剤として合量で0.3〜1.5％含
有させれば、溶融中の残留泡が減少する。
（実施例）
次に本発明の実施例について説明する。表中No.
１〜No.８が本発明の実施例、No.９はベークライト
の比較例であり、ガラス組成は重量百分率で示
す。耐熱性は試料を200℃に加熱して20℃の水中
に浸漬後、変形およびクラツク等を観察した。
[Object of the Invention] (Field of Industrial Application) The present invention relates to an electric circuit board in which a copper alloy thin film is formed on the surface of a substrate made of silicate glass with a high Cu 2 O content by reduction treatment. . (Prior Art) Conventionally, electric circuit boards used for semiconductor elements and integrated circuits are those made of resin substrates made of Bakelite, epoxy resin, etc., with a metal thin film coated by a plating method, etc., or alumina, etc. The main substrate is printed with metal-containing ink on a substrate made of an inorganic substance and fired in a reducing atmosphere, but glass plates are sometimes used as the substrate because of the smoothness of glass and the ease with which it can be shaped and processed. Because the resin substrate is an organic material, its heat resistance is around 100℃, and its thermal conductivity is low at around 10 -3 W/cm・deg. Alumina substrates are not easy to process, such as grinding and drilling, and must be fired at high temperatures after forming the powder. Furthermore, silicate glass with a high PbO content is heated and reduced in a hydrogen atmosphere to form a conductive thin film on its surface, which is used in electron multiplier tubes. It is known that a conductive thin film made of this reduction-treated glass can provide a stable and uniform conductive layer. (Problems to be solved by the invention) As mentioned above, in the conventional electric circuit board,
Resin substrates have the drawback of low heat resistance and thermal conductivity, and alumina substrates have problems with workability and moldability. The present invention was made in consideration of the above circumstances, and
The purpose of the present invention is to provide an electric circuit board that has higher heat resistance and thermal conductivity than a resin board, and has better workability and moldability than an alumina board. [Structure of the Invention] (Means and Effects for Solving the Problems) The present invention reduces a silicate glass substrate with a high Cu 2 O content to form a conductive copper alloy thin film on its surface. It is something. i.e. SiO2 55-75%, Al2O3 5-15 %, Cu2O10-30 in weight percentage
%, B 2 O 3 , MgO, CaO, SrO, BaO, ZnO are each 0 to 10%, and the total amount of two or more types is 1 to 10
%, As 2 O 3 is a glass substrate containing 0.3 to 1.5% of Sb 2 O 3 in total, and a copper alloy thin film is formed on the surface of the glass substrate by reduction treatment. This copper alloy thin film is interpreted to be one in which the copper oxide in the glass surface layer is reduced by the reduction treatment and is dispersed as single copper atoms. The reason why each component of the glass is limited to the above range will be explained. If SiO 2 is less than 55%, the chemical durability and heat resistance will decrease, and if it exceeds 75%, it will be difficult to melt and the glass will not be homogeneous. If Al 2 O 3 is less than 5%, a phase separation phenomenon occurs quickly during cooling after melting, making it impossible to obtain a homogeneous glass, and if it exceeds 15%, it becomes difficult to melt. If Cu 2 O is less than 10%, a good copper alloy thin film cannot be obtained even if the surface of the substrate is reduced, and if it exceeds 30%, the electrical resistance of the glass decreases. B 2 O 3 , MgO, CaO, SrO, BaO, and ZnO are contained in a total amount of 1 to 10% in order to improve meltability and obtain a homogeneous glass by forming a multicomponent system.
If As 2 O 3 and Sb 2 O 3 are contained as clarifiers in a total amount of 0.3 to 1.5%, residual bubbles during melting will be reduced. (Example) Next, an example of the present invention will be described. No. in the table
No. 1 to No. 8 are examples of the present invention, No. 9 is a comparative example of Bakelite, and the glass composition is shown in weight percentage. Heat resistance was determined by heating the sample to 200°C and immersing it in water at 20°C, and then observing deformation, cracks, etc.
以上のように本発明は、Cu2O含有量の高いケ
イ酸塩ガラスからなる基板を還元処理して、その
表面に銅合金薄膜を形成した電気回路用基板であ
り、樹脂基板に比べ耐熱性、熱伝導率が高く、か
つアルミナ基板に比べ成形性、加工性にすぐれて
おり、また銅合金薄膜の膜厚も容易に調整するこ
とができる等の利点を有している。
As described above, the present invention is an electric circuit board in which a thin copper alloy film is formed on the surface of a substrate made of silicate glass with a high Cu 2 O content by reduction treatment, and it has higher heat resistance than a resin substrate. , has high thermal conductivity, has superior formability and workability compared to alumina substrates, and has advantages such as the ability to easily adjust the thickness of the copper alloy thin film.
Claims (1)
Cu2O10〜30％、B2O3、MgO、CaO、SrO、
BaO、ZnOがそれぞれ０〜10％、かつ２種以上
の合量で１〜10％、As2O3、Sb2O3が合量で0.3〜
1.5％を含有してなるガラス基板を還元処理して、
その表面に銅合金薄膜を形成したことを特徴とす
る電気回路用基板。1 SiO 2 55-75%, Al 2 O 3 5-15% by weight percentage,
Cu2O10-30 % , B2O3 , MgO, CaO, SrO,
BaO and ZnO are each 0 to 10%, and the total amount of two or more types is 1 to 10%, and the total amount of As 2 O 3 and Sb 2 O 3 is 0.3 to 10%.
A glass substrate containing 1.5% is subjected to reduction treatment,
An electric circuit board characterized by having a copper alloy thin film formed on its surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11299487A JPS63277536A (en) | 1987-05-08 | 1987-05-08 | Substrate for electric circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11299487A JPS63277536A (en) | 1987-05-08 | 1987-05-08 | Substrate for electric circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63277536A JPS63277536A (en) | 1988-11-15 |
| JPH0436106B2 true JPH0436106B2 (en) | 1992-06-15 |
Family
ID=14600761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11299487A Granted JPS63277536A (en) | 1987-05-08 | 1987-05-08 | Substrate for electric circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63277536A (en) |
-
1987
- 1987-05-08 JP JP11299487A patent/JPS63277536A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63277536A (en) | 1988-11-15 |
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