JPH0438717B2 - - Google Patents
Info
- Publication number
- JPH0438717B2 JPH0438717B2 JP1077486A JP1077486A JPH0438717B2 JP H0438717 B2 JPH0438717 B2 JP H0438717B2 JP 1077486 A JP1077486 A JP 1077486A JP 1077486 A JP1077486 A JP 1077486A JP H0438717 B2 JPH0438717 B2 JP H0438717B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- pedestal
- shaft
- single crystal
- crucible shaft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 238000004804 winding Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011796 hollow space material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はチヨクラルスキー法（CZ法）、即ち原
料をるつぼ内に入れて加熱溶融し、チヤツクに保
持した単結晶のシード（種子）を上方から融液中
に漬け、回転しながら徐々に引き上げて単結晶を
成長させるようにした単結晶製造法によつて単結
晶を製造する装置、特にシリコン単結晶成長装置
において、るつぼのペデイスタル（支柱）をるつ
ぼ軸に固定する方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is based on the Czyochralski method (CZ method), in which raw materials are placed in a crucible, heated and melted, and a single crystal seed is held in a chuck. The pedestal of the crucible is used in equipment that manufactures single crystals using the single crystal manufacturing method, in which the single crystal is grown by immersing it in the melt from above and gradually pulling it up while rotating, especially in silicon single crystal growth equipment. ) on the crucible shaft.
一般に単結晶製造装置におけるるつぼのペデイ
スタルや他の加熱構成品は、主にチヤンバ（炉）
内を清掃するため取外しができるようにしなけれ
ばならない。るつぼのペデイスタルはるつぼ軸に
固定されるが、るつぼ軸の回転・移動をペデイス
タルに一対一で伝達するためペデイスタルはるつ
ぼ軸に強固に固定し、かつるつぼ軸より容易に分
離することができるようにする必要がある。
In general, the crucible pedestal and other heating components in single crystal production equipment are mainly used in the chamber (furnace).
It must be removable for internal cleaning. The pedestal of the crucible is fixed to the crucible shaft, but in order to transmit the rotation and movement of the crucible shaft to the pedestal on a one-to-one basis, the pedestal is firmly fixed to the crucible shaft and can be easily separated from the crucible shaft. There is a need to.
また、ペデイスタルはるつぼからの熱伝導やこ
れを加熱するためのヒータにより高温状態にな
り、例えばペデイスタルとるつぼ軸との接触部の
温度は800℃〜1000℃の高温になる。ペデイスタ
ルとるつぼ軸との固定はこの高温による影響を受
けないようにすることも必要である。 Further, the pedestal becomes high temperature due to heat conduction from the crucible and a heater for heating it, and for example, the temperature of the contact portion between the pedestal and the crucible shaft reaches a high temperature of 800°C to 1000°C. It is also necessary to ensure that the pedestal and the crucible shaft are not affected by this high temperature.
従来方法は、るつぼ内に入れる単結晶の量が少
ない場合、第４図ａ，ｂ示のようにるつぼのペデ
イスタル２の凸状または凹状の下部３をるつぼ軸
４の凹状または凸状の上部５に嵌合し、あるいは
第５図示のように更に両者を側方より止めねじ８
により固定していた。 In the conventional method, when the amount of single crystal to be put into the crucible is small, the convex or concave lower part 3 of the pedestal 2 of the crucible is replaced with the concave or convex upper part 5 of the crucible shaft 4, as shown in FIGS. 4a and 4b. or as shown in Figure 5, tighten the setscrew 8 from the side.
It was fixed by
しかし上記従来方法では結晶の高質化や大形化
に伴い、高純度グラフアイト製のペデイスタル２
とステンレス鋼製のるつぼ軸４の熱膨張の相違に
よりペデイスタル２とるつぼ軸４との間に隙間が
生じたり、止めねじ８が緩んだりしてるつぼ軸４
の回転・移動がペデイスタル２及びるつぼに適切
に伝達されないという問題点があつた。
However, with the above conventional method, as the quality and size of the crystal increases, the pedestal 2 made of high-purity graphite
Due to the difference in thermal expansion between the pedestal 2 and the crucible shaft 4 made of stainless steel, a gap may occur between the pedestal 2 and the crucible shaft 4, or the set screw 8 may become loose.
There was a problem in that the rotation and movement of the crucible was not properly transmitted to the pedestal 2 and the crucible.
本発明方法は上記の問題点を解決するため、第
１図〜第３図示のようにるつぼ１を用いて単結晶
を製造する装置において、るつぼ１のペデイスタ
ル２を中空構造とし、この中空構造のペデイスタ
ル２の下部３をるつぼ軸４の上部５に高融点材料
よりなるボルト６とワツシヤ７を用いて固定する
ものである。
In order to solve the above-mentioned problems, the method of the present invention uses a crucible 1 as shown in FIGS. The lower part 3 of the pedestal 2 is fixed to the upper part 5 of the crucible shaft 4 using bolts 6 and washers 7 made of a high melting point material.
以下図面により本発明方法の一実施例を説明す
る。
An embodiment of the method of the present invention will be described below with reference to the drawings.
第１図は本発明に係るシリコン単結晶成長装置
の構成を示す説明図、第２図はその要部の断面図
である。 FIG. 1 is an explanatory diagram showing the configuration of a silicon single crystal growth apparatus according to the present invention, and FIG. 2 is a sectional view of the main part thereof.
第１図及び第２図において９はチヤンバベース
１０上に設置した結晶成長用チヤンバ、１１はこ
のチヤンバ９内に設けたメルトレシーブ、１はこ
のメルトレシーブ１１の中心部に配置したるつぼ
で、シリコン単結晶を充填する石英製るつぼ１ａ
と、その外側の高純度グラフアイト製るつぼ（る
つぼホルダ）１ｂよりなる。 In FIGS. 1 and 2, 9 is a crystal growth chamber installed on a chamber base 10, 11 is a melt receive provided in this chamber 9, and 1 is a crucible placed in the center of this melt receive 11. Quartz crucible 1a filled with crystals
and a crucible (crucible holder) 1b made of high-purity graphite.
２はるつぼ１を支える高純度グラフアイト製ペ
デイスタル（支柱）、４はこのペデイスタル２に
固定したステンレス鋼製るつぼ軸、１２はるつぼ
軸４及びペデイスタル２を介してるつぼ１を回転
しながら軸方向に移動するためのるつぼ回転・移
動部である。 2 is a pedestal made of high-purity graphite that supports the crucible 1; 4 is a stainless steel crucible shaft fixed to the pedestal 2; 12 is a crucible shaft that rotates the crucible 1 in the axial direction via the crucible shaft 4 and the pedestal 2; This is a crucible rotating/moving part for moving.
１３はるつぼ１を加熱するためのヒータ、１４
は原料融液、１５はヒータ１３に通電するための
エレクトロード、１６はヒータ温度センサ、１７
はチヤンバ９に連結した主排気ポンプ、１８は融
液１４の状態及び単結晶１９の成長状態を監視す
るためのビデコンカメラである。 13 is a heater for heating the crucible 1; 14
15 is an electrode for energizing the heater 13; 16 is a heater temperature sensor; 17 is a raw material melt;
1 is a main exhaust pump connected to the chamber 9, and 18 is a videocon camera for monitoring the state of the melt 14 and the growth state of the single crystal 19.
２０は単結晶のシード（種子）、２１はこのシ
ードを保持したシードチヤツク、２２はチヤンバ
９の上部に連接したアイソレーシヨンバルブ、２
３はその上部に連結したプルチヤンバ部、２４は
このプルチヤンバ部２３に連結した補助排気ポン
プ、２５は所要のガスを供給するためのガスシス
テム、２６はプルチヤンバ部２３の上部にスリツ
プリング部２７を介して回転自在に設置されたワ
イヤロープ巻き取り部で、そのワイヤロープ２８
の先端にシードチヤツク２１が懸垂されている。
２９はワイヤロープ巻き取り部２６を回転するた
めの回転駆動部である。 20 is a single crystal seed, 21 is a seed chuck holding this seed, 22 is an isolation valve connected to the upper part of the chamber 9, 2
3 is a pull chamber part connected to the upper part thereof, 24 is an auxiliary exhaust pump connected to this pull chamber part 23, 25 is a gas system for supplying the required gas, and 26 is a pull chamber part connected to the upper part of the pull chamber part 23 via a slip ring part 27. The wire rope winding section is rotatably installed at the wire rope 28.
A seed chuck 21 is suspended from the tip.
29 is a rotation drive unit for rotating the wire rope winding unit 26.
この装置は主、補助排気ポンプ１７，２４を駆
動して結晶成長用チヤンバ９及びプルチヤンバ部
２３の内部を排気し、ガスシステム２５より所要
のガスを供給してガス雰囲気中でヒータ１３によ
りるつぼ１を加熱して原料を溶融する。 This apparatus mainly drives the auxiliary exhaust pumps 17 and 24 to exhaust the inside of the crystal growth chamber 9 and the pull chamber part 23, supplies the required gas from the gas system 25, and uses the heater 13 in the gas atmosphere to evacuate the inside of the crystal growth chamber 9 and the pull chamber part 23. is heated to melt the raw materials.
そしてシードチヤツク２１に保持したシード２
０を上方から融液１４中に漬け、るつぼ４をるつ
ぼ回転・移動部１２により回転しながら下方に移
動する一方、ワイヤロープ巻き取り部２６を回転
駆動部２９により回転すると共にワイロープ巻き
取り部２６によりワイヤロープ２８を巻き取るこ
とによつてワイヤロープ２８に懸垂したシードチ
ヤツク２１を回転しながら徐々に引き上げ（上方
に移動し）て単結晶１９を成長させるものであ
る。 Seed 2 held in seed chuck 21
0 is immersed in the melt 14 from above, and the crucible 4 is rotated and moved downward by the crucible rotating/moving section 12, while the wire rope winding section 26 is rotated by the rotation drive section 29 and the wire rope winding section 26 By winding up the wire rope 28, the seed chuck 21 suspended from the wire rope 28 is gradually pulled up (moved upward) while rotating, thereby growing the single crystal 19.
本発明方法はこのような単結晶製造装置におい
て、第３図示のようにるつぼ１のペデイスタル２
を中空構造とし、この中空構造のペデイスタル２
の凹状下部３をるつぼ軸４の凸状上部５に、
Mo，Ｗ，Ta等の高融点材料よりなるボルト６と
ワツシヤ７を用いて固定する。ボルト６の緊締に
は治具を用いる。 In the method of the present invention, in such a single crystal manufacturing apparatus, the pedestal 2 of the crucible 1 is
is a hollow structure, and the pedestal 2 of this hollow structure
the concave lower part 3 of the crucible to the convex upper part 5 of the crucible shaft 4,
It is fixed using bolts 6 and washers 7 made of a high melting point material such as Mo, W, Ta, etc. A jig is used to tighten the bolts 6.
また、本実施例ではるつぼ軸４に冷却水通路３
０を設け、この通路３０に冷却水パイプ３１を収
め、当該パイプ３１から冷却水を供給してるつぼ
軸４を冷却する構造にする。 In addition, in this embodiment, a cooling water passage 3 is provided in the crucible shaft 4.
0, a cooling water pipe 31 is housed in this passage 30, and cooling water is supplied from the pipe 31 to cool the crucible shaft 4.
このようにペデイスタル２を中空構造とし、こ
の中空構造のペデイスタル２をるつぼ軸４にボル
ト６とワツシヤ７を用いて固定する方法であるか
ら、ペデイスタル２の固定を、中空を利用して容
易にかつ強固にできるばかりでなく、ペデイスタ
ル２を中空構造としたことにより、るつぼ１から
の熱伝導による熱伝達量を減少させると共にるつ
ぼ軸４を冷却構造にすることを相まつてペデイス
タル２とるつぼ軸４との接触部分の温度上昇を極
力抑え、ペデイスタル２とるつぼ軸４の熱膨張の
相違により両者間に隙間が生じても当該隙間を極
くわずかにでき、かつ緩みのおそれもないから、
るつぼ軸４の回転・移動をペデイスタル２及びる
つぼ１に適切に伝達することができる。またるつ
ぼ軸４を冷却することによりるつぼ軸４とボルト
６間のねじ部の焼き付けも防止できる。 Since the pedestal 2 has a hollow structure and is fixed to the crucible shaft 4 using the bolt 6 and the washer 7, the pedestal 2 can be easily fixed by using the hollow space. In addition to being strong, the hollow structure of the pedestal 2 reduces the amount of heat transferred from the crucible 1 by heat conduction, and the crucible shaft 4 has a cooling structure. The temperature rise at the contact part is suppressed as much as possible, and even if a gap occurs between the pedestal 2 and the crucible shaft 4 due to the difference in thermal expansion, the gap can be made extremely small, and there is no risk of loosening.
The rotation and movement of the crucible shaft 4 can be appropriately transmitted to the pedestal 2 and the crucible 1. Furthermore, by cooling the crucible shaft 4, the threaded portion between the crucible shaft 4 and the bolt 6 can be prevented from seizing.
また、高融点材料よりなるボルト６とワツシヤ
７を用いているので、これらより不純物が放出さ
れて炉内雰囲気が汚染されることはなく、また、
1000℃前後でカーボンと反応することもなく、か
つ高温強度を高めることができる。 In addition, since the bolts 6 and washers 7 are made of high melting point materials, impurities are not released from them and the atmosphere inside the furnace is not contaminated.
It does not react with carbon at around 1000℃ and can increase high-temperature strength.
上述のように本発明によれば、ペデイスタル２
を中空構造とし、この中空構造のペデイスタル２
をるつぼ軸４にボルト６とワツシヤ７を用いた固
定する方法であるから、ペデイスタル２の固定
を、中空を利用して容易にかつ強固にできるばか
りでなく、ペデイスタル２を中空構造としたこと
により、るつぼ１からの熱伝導による熱伝達量を
減少させてペデイスタル２とるつぼ軸４との接触
部分の温度上昇を抑え、ペデイスタル２とるつぼ
軸４との熱膨張の相違により両者間に隙間が生じ
ても当該隙間を小さくでき、かつ緩みのおそれも
ないから、るつぼ軸４の回転・移動をペデイスタ
ル２及びるつぼ１に適切に伝達することができ
る。
As described above, according to the present invention, the pedestal 2
is a hollow structure, and the pedestal 2 of this hollow structure
Since this is a method of fixing the pedestal 2 to the crucible shaft 4 using the bolt 6 and the washer 7, the pedestal 2 can not only be fixed easily and firmly by using the hollow space, but also because the pedestal 2 has a hollow structure. , the amount of heat transferred by heat conduction from the crucible 1 is reduced to suppress the temperature rise at the contact area between the pedestal 2 and the crucible shaft 4, and a gap is created between the pedestal 2 and the crucible shaft 4 due to the difference in thermal expansion between them. Since the gap can be made small and there is no fear of loosening, the rotation and movement of the crucible shaft 4 can be appropriately transmitted to the pedestal 2 and the crucible 1.
また、高融点材料よりなるボルト６とワツシヤ
７を用いているので、これらより不純物が放出さ
れて炉内雰囲気が汚染されることはなく、また
1000℃前後でカーボンと反応することもなく、か
つ高温強度を高めることができる。 In addition, since the bolts 6 and washers 7 are made of high melting point materials, impurities are not released from them and the atmosphere inside the furnace is not contaminated.
It does not react with carbon at around 1000℃ and can increase high-temperature strength.
第１図は本発明に係るシリコン単結晶成長装置
の構成を示す説明図、第２図はその要部の断面
図、第３図は本発明方法を実施したペデイスタル
固定部の一例を示す断面図、第４図ａ，ｂ及び第
５図は従来方法を適用したペデイスタル固定部の
各例を示す断面図である。
１……るつぼ、２……ペデイスタル、３……下
部、４……るつぼ軸、５……上部、６……ボル
ト、７……ワツシヤ。
FIG. 1 is an explanatory diagram showing the configuration of a silicon single crystal growth apparatus according to the present invention, FIG. 2 is a sectional view of the main part thereof, and FIG. 3 is a sectional view showing an example of a pedestal fixing part in which the method of the present invention is implemented. , FIGS. 4a and 4b, and FIG. 5 are sectional views showing examples of pedestal fixing parts to which the conventional method is applied. 1... Crucible, 2... Pedestal, 3... Lower part, 4... Crucible axis, 5... Upper part, 6... Bolt, 7... Washer.
Claims (1)
て、るつぼのペデイスタルを中空構造とし、この
中空構造のペデイスタルの下部をるつぼ軸の上部
に高融点材料よりなるボルトとワツシヤを用いて
固定することを特徴とするペデイスタル固定方
法。1. An apparatus for producing a single crystal using a crucible, characterized in that the pedestal of the crucible has a hollow structure, and the lower part of the hollow pedestal is fixed to the upper part of the crucible shaft using a bolt and washer made of a high melting point material. pedestal fixing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1077486A JPS62167285A (en) | 1986-01-20 | 1986-01-20 | Method for fixing pedestal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1077486A JPS62167285A (en) | 1986-01-20 | 1986-01-20 | Method for fixing pedestal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62167285A JPS62167285A (en) | 1987-07-23 |
| JPH0438717B2 true JPH0438717B2 (en) | 1992-06-25 |
Family
ID=11759675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1077486A Granted JPS62167285A (en) | 1986-01-20 | 1986-01-20 | Method for fixing pedestal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62167285A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2539121B2 (en) * | 1991-09-19 | 1996-10-02 | 株式会社日立製作所 | Superconducting magnet |
| CN102312287A (en) * | 2011-07-04 | 2012-01-11 | 浙江晶盛机电股份有限公司 | Crucible shaft with improved water cooling structure |
| JP2016199440A (en) * | 2015-04-13 | 2016-12-01 | 住友金属鉱山株式会社 | Crystal growth apparatus |
-
1986
- 1986-01-20 JP JP1077486A patent/JPS62167285A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62167285A (en) | 1987-07-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |