JPH0438718B2 - - Google Patents
Info
- Publication number
- JPH0438718B2 JPH0438718B2 JP25185883A JP25185883A JPH0438718B2 JP H0438718 B2 JPH0438718 B2 JP H0438718B2 JP 25185883 A JP25185883 A JP 25185883A JP 25185883 A JP25185883 A JP 25185883A JP H0438718 B2 JPH0438718 B2 JP H0438718B2
- Authority
- JP
- Japan
- Prior art keywords
- graphite crucible
- slit
- pulling
- semiconductor single
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 27
- 229910002804 graphite Inorganic materials 0.000 claims description 27
- 239000010439 graphite Substances 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000001154 acute effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
本発明は半導体単結晶引上用黒鉛ルツボの改良
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in graphite crucibles for pulling semiconductor single crystals.
シリコン等の半導体単結晶の製造は第１図に示
すように黒鉛ルツボ１内に例えば石英ルツボ２を
内装した装置を用い、この石英ルツボ２内にシリ
コン多結晶体等の半導体原料を収容してこれらの
外部に配設されたヒータにより溶融し、この溶融
シリコン３に種結晶を浸してこれを引上げること
により行なわれている。 As shown in FIG. 1, the production of semiconductor single crystals such as silicon uses an apparatus in which a quartz crucible 2 is installed inside a graphite crucible 1, and semiconductor raw materials such as silicon polycrystals are stored in this quartz crucible 2. The silicon is melted by a heater disposed outside of these, and a seed crystal is immersed in the molten silicon 3 and pulled up.
従来、上記黒鉛ルツボ１は熱膨張を吸収するた
めに第２図及び第３図に示すように、いわゆる縦
割で２分割以上、例えば３分割されている。 Conventionally, in order to absorb thermal expansion, the graphite crucible 1 is divided into two or more, for example, three, so-called vertical divisions, as shown in FIGS. 2 and 3.
しかし、上述した従来の黒鉛ルツボは径方向の
膨張力に対しては拡がることができるが、高さ方
向の膨張力に対しては拡がることができず、第２
図に示すようにクラツク４が入るという欠点があ
る。 However, although the conventional graphite crucible described above can expand against expansion force in the radial direction, it cannot expand against expansion force in the height direction.
There is a drawback that a crack 4 occurs as shown in the figure.
本発明は上記欠点を解消するためになされたも
のであり、径方向及び高さ方向の両方向の膨張力
を吸収することができ、クラツクの入りにくい半
導体単結晶引上用黒鉛ルツボを提供しようとする
ものである。 The present invention has been made to eliminate the above-mentioned drawbacks, and aims to provide a graphite crucible for pulling semiconductor single crystals that can absorb expansion forces in both the radial direction and the height direction, and is resistant to cracks. It is something to do.
すなわち本発明の半導体単結晶引上用黒鉛ルツ
ボは、黒鉛ルツボが少なくとも底部及び上部の円
筒部からなり、上部の円筒部に螺旋状のスリツト
を設けたことを特徴とするものである。 That is, the graphite crucible for pulling a semiconductor single crystal of the present invention is characterized in that the graphite crucible consists of at least a bottom and an upper cylindrical part, and a spiral slit is provided in the upper cylindrical part.
このように上部の円筒部に螺旋状のスリツトを
設ければ、径方向及び高さ方向に両方向の膨張力
を吸収することができ、クラツクを入りにくくす
ることができる。 By providing the spiral slit in the upper cylindrical portion in this way, it is possible to absorb expansion forces in both the radial direction and the height direction, making it difficult for cracks to occur.
本発明において、スリツトの長さは上部円筒部
のスリツトが設けられた部分の
√（高さ）2＋（外周）2以上、すなわち円筒部の展開
図における対角線の長さ以上であることが望まし
い。これは、スリツトの長さが
√（高さ）2＋（外周）2未満では膨張力に対する拡が
りかたが少なく、クラツクが入るのを防止する効
果が少ないためである。 In the present invention, the length of the slit is preferably equal to or greater than √ (height) 2 + (outer circumference) 2 of the portion of the upper cylindrical portion where the slit is provided, that is, the length of the diagonal line in the developed view of the cylindrical portion. . This is because if the length of the slit is less than √ (height) 2 + (circumference) 2 , it will not be able to spread as much against the expansion force and will be less effective in preventing cracks.
また、本発明において、スリツトにより形成さ
れる分割面は黒鉛ルツボの厚み方向の断面に対し
て30〜60°の範囲で傾斜して設けられていること
が望ましい。これは上記角度が30°未満ではヒー
タからの熱がスリツトを通して直接内装されてい
る石英ルツボ等に伝わり易く、石英ルツボ等の軟
化変形やスリツトへのくい込みを招くためであ
る。一方、上記角度が60°を超えると分割面の端
部が鋭角的になり、欠け易くなるためである。 Further, in the present invention, it is preferable that the dividing plane formed by the slit be inclined at an angle of 30 to 60 degrees with respect to the cross section in the thickness direction of the graphite crucible. This is because if the above-mentioned angle is less than 30°, the heat from the heater is likely to be directly transmitted through the slit to the quartz crucible, etc., which is housed inside, leading to softening and deformation of the quartz crucible, etc., and causing it to sink into the slit. On the other hand, if the above-mentioned angle exceeds 60°, the ends of the dividing planes become acute and are likely to be chipped.
以下、本発明の実施例を第４図〜第７図を参照
して説明する。 Embodiments of the present invention will be described below with reference to FIGS. 4 to 7.
第４図は本発明に係る黒鉛ルツボ１１の正面図
を示し、この黒鉛ルツボ１１は底部１２、円筒部
１３及び上端部１４から構成されている。前記底
部１２は第４図及び第５図に示す如く３分割され
ている。また、前記円筒部１３には第４図に示す
如く上端から下端まで連続的に螺旋状のスリツト
１５が設けられている。このスリツト１５の長さ
は円筒部１３の√（高さ）2＋（外周）2以上、すなわ
ち円筒部１３の展開図における対角線の長さ以上
となつている。更に、これら底部１２、円筒部１
３及び上端部１４には第６図に示す如く対応する
凹凸が設けられ、互いに嵌合されている。そし
て、第６図のＡ部分を拡大して示す第７図に示す
如く前記スリツト１５により形成される分割面は
黒鉛ルツボ１１の厚みに方向の断面に対してθ＝
30〜60°の範囲で傾斜して設けられている。 FIG. 4 shows a front view of a graphite crucible 11 according to the present invention, and this graphite crucible 11 is composed of a bottom portion 12, a cylindrical portion 13, and an upper end portion 14. The bottom portion 12 is divided into three parts as shown in FIGS. 4 and 5. Further, as shown in FIG. 4, the cylindrical portion 13 is provided with a continuous spiral slit 15 from the upper end to the lower end. The length of this slit 15 is equal to or greater than √(height) 2 +(outer circumference) 2 of the cylindrical portion 13, that is, the length of the diagonal line in the developed view of the cylindrical portion 13. Furthermore, these bottom portion 12, cylindrical portion 1
3 and the upper end portion 14 are provided with corresponding recesses and recesses, as shown in FIG. 6, and are fitted into each other. As shown in FIG. 7, which is an enlarged view of part A in FIG. 6, the dividing plane formed by the slit 15 is θ=
It is installed at an angle of 30 to 60 degrees.
しかして上記黒鉛ルツボ１１によれば、円筒部
１３の上端から下端まで連続的に螺旋状のスリツ
ト１５が設けられているので、径方向だけでなく
高さ方向の膨張力に対しても有効に拡がることが
でき、極めてクラツクが入りにくくなる。 According to the graphite crucible 11, since the spiral slit 15 is continuously provided from the upper end to the lower end of the cylindrical portion 13, it is effective against expansion forces not only in the radial direction but also in the height direction. It can be expanded and is extremely difficult to crack.
事実、第２図及び第３図に示すような従来の黒
鉛ルツボをシリコン単結晶の引上げに用いた場合
その耐用回数は21回であつてのに対し、上記黒鉛
ルツボ１１の耐用回数は35回となり、大幅に耐用
回数を向上することができた。 In fact, when a conventional graphite crucible as shown in FIGS. 2 and 3 is used for pulling silicon single crystals, it can be used for 21 times, whereas the above graphite crucible 11 can be used for 35 times. As a result, we were able to significantly improve the service life.
以上詳述した如く本発明の半導体単結晶引上用
黒鉛ルツボによれば、熱膨張によるクラツクが入
りにくくなり、耐用回数を向上することができる
ものである。 As detailed above, according to the graphite crucible for pulling semiconductor single crystals of the present invention, cracks due to thermal expansion are less likely to occur, and the number of lifetimes can be increased.
第１図は黒鉛ルツボの使用状態を示す断面図、
第２図は従来の黒鉛ルツボの正面図、第３図は同
黒鉛ルツボの平面図、第４図は本発明の実施例に
おける黒鉛ルツボの正面図、第５図は同黒鉛ルツ
ボの底部の平面図、第６図は同黒鉛ルツボの断面
図、第７図は第６図のＡ部分を拡大して示す断面
図である。
１１……黒鉛ルツボ、１２……底部、１３……
円筒部、１４……上端部、１５……スリツト。
Figure 1 is a cross-sectional view showing how the graphite crucible is used.
Fig. 2 is a front view of a conventional graphite crucible, Fig. 3 is a plan view of the graphite crucible, Fig. 4 is a front view of a graphite crucible according to an embodiment of the present invention, and Fig. 5 is a plan view of the bottom of the graphite crucible. 6 is a sectional view of the same graphite crucible, and FIG. 7 is an enlarged sectional view of part A in FIG. 6. 11...graphite crucible, 12...bottom, 13...
Cylindrical portion, 14... upper end portion, 15... slit.
Claims (1)
する半導体単結晶引上用黒鉛ルツボにおいて、前
記黒鉛ルツボが少なくとも底部及び上部の円筒部
からなり、上部の円筒部に螺旋状のスリツトを設
けたことを特徴とする半導体単結晶引上用黒鉛ル
ツボ。 ２ スリツトの長さが上部円筒部のスリツトが設
けられた部分の√（高さ）2＋（外周）2以上である
ことを特徴とする特許請求の範囲第１項記載の半
導体単結晶引上用黒鉛ルツボ。 ３ スリツトにより形成される分割面が黒鉛ルツ
ボの厚み方向の断面に対して30〜60°の範囲で傾
斜して設けられていることを特徴とする特許請求
の範囲第１項記載の半導体単結晶引上用黒鉛ルツ
ボ。[Scope of Claims] 1. A graphite crucible for pulling a semiconductor single crystal that includes a crucible for storing and melting semiconductor raw materials, wherein the graphite crucible is composed of at least a bottom and an upper cylindrical part, and the upper cylindrical part has a spiral shape. A graphite crucible for pulling semiconductor single crystals characterized by having a slit. 2. Semiconductor single crystal pulling according to claim 1, characterized in that the length of the slit is √ (height) 2 + (outer circumference) 2 or more of the portion of the upper cylindrical portion where the slit is provided. Graphite crucible for use. 3. The semiconductor single crystal according to claim 1, wherein the dividing plane formed by the slit is inclined at an angle of 30 to 60 degrees with respect to the cross section in the thickness direction of the graphite crucible. Graphite crucible for pulling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25185883A JPS60137893A (en) | 1983-12-26 | 1983-12-26 | Graphite crucible for pulling semiconductor single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25185883A JPS60137893A (en) | 1983-12-26 | 1983-12-26 | Graphite crucible for pulling semiconductor single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60137893A JPS60137893A (en) | 1985-07-22 |
| JPH0438718B2 true JPH0438718B2 (en) | 1992-06-25 |
Family
ID=17228964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25185883A Granted JPS60137893A (en) | 1983-12-26 | 1983-12-26 | Graphite crucible for pulling semiconductor single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60137893A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19830785A1 (en) * | 1998-07-09 | 2000-01-13 | Wacker Siltronic Halbleitermat | Supporting crucibles for supporting crucibles |
| DE10055033A1 (en) * | 2000-11-07 | 2002-05-08 | Aixtron Ag | Device for depositing crystalline layers onto crystalline substrates has a space between a reactor housing wall and a graphite tube filled with a graphite foam notched collar |
| JP2013512835A (en) * | 2009-12-04 | 2013-04-18 | サン−ゴバン インドゥストリーケラミク レーデンタール ゲゼルシャフト ミット ベシュレンクテル ハフツング | Equipment for holding silicon melt |
| WO2011096821A1 (en) * | 2010-02-08 | 2011-08-11 | Nordic Ceramics As | Sectioned crucible |
| CN102115909A (en) * | 2010-10-13 | 2011-07-06 | 浙江舒奇蒙能源科技有限公司 | Single crystal furnace with three-side-wall graphite crucible |
-
1983
- 1983-12-26 JP JP25185883A patent/JPS60137893A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60137893A (en) | 1985-07-22 |
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